CN111816458A - Super capacitor and preparation method thereof - Google Patents
Super capacitor and preparation method thereof Download PDFInfo
- Publication number
- CN111816458A CN111816458A CN202010656283.0A CN202010656283A CN111816458A CN 111816458 A CN111816458 A CN 111816458A CN 202010656283 A CN202010656283 A CN 202010656283A CN 111816458 A CN111816458 A CN 111816458A
- Authority
- CN
- China
- Prior art keywords
- electrode
- oxide layer
- substrate
- supercapacitor according
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000009467 reduction Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 32
- 230000002401 inhibitory effect Effects 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 230000006698 induction Effects 0.000 claims description 6
- 244000126211 Hericium coralloides Species 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000001965 increasing effect Effects 0.000 abstract description 8
- 230000005764 inhibitory process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 50
- 239000003960 organic solvent Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- -1 1-ethyl-3-methylimidazolium tetrafluoroborate Chemical compound 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/44—Raw materials therefor, e.g. resins or coal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
The invention discloses a super capacitor and a preparation method thereof, and belongs to the field of capacitors. The line widths of the first electrode and the second electrode of the super capacitor are both 100nm-18000nm, and compared with the existing super capacitor, the specific surface area of the electrode is effectively increased, so that the energy density of the super capacitor is improved. According to the preparation method of the supercapacitor, the oxide layer is reduced by adopting the induced light beam with the first preset wavelength, and the preset area of the reduced oxide layer is inhibited by utilizing the preset inhibition reduction method, so that the electrode with the line width lower than 20 mu m is generated, and the specific surface area of the reduced graphene oxide in the supercapacitor is greatly improved.
Description
Technical Field
The invention relates to the field of capacitors, in particular to a super capacitor and a preparation method thereof.
Background
The graphene supercapacitor is a general name of a supercapacitor based on a graphene material, and is widely applied due to the characteristics of unique two-dimensional structure, electrical conductivity, high power, long service life, environmental protection and the like of graphene. The laser direct writing technology is used as a method for reducing graphene oxide, and a controllable periodic structure of a reduced graphene oxide electrode can be realized. The energy storage mechanism of the graphene supercapacitor is based on double-layer energy storage, and under the condition that the voltage between electrodes is not increased, the surface condition of an electrode material is a key factor for determining the capacity of the capacitor, and the specific surface area of the electrode material is required to be as large as possible, so that the energy density of the supercapacitor is increased. However, due to diffraction limit and thermal diffusion generated during laser reduction, electrodes of graphene supercapacitors with widths below 20 μm cannot be prepared at present.
Disclosure of Invention
Aiming at the problems of small specific surface area and low energy density of the existing graphene super capacitor, the super capacitor and the preparation method thereof are provided, wherein the purpose of increasing the specific surface area and improving the energy density is achieved.
The present invention provides a supercapacitor, comprising:
a substrate;
the oxide layer is formed on the upper surface of the substrate;
the first electrode is embedded in the oxide layer, and the line width of the first electrode is between 100nm and 18000 nm;
the second electrode is embedded in the oxide layer, the second electrode and the first electrode are arranged at intervals, and the line width of the second electrode is between 100nm and 18000 nm.
Preferably, a ratio of a gap distance between the first electrode and the second electrode to a line width of the first electrode or the second electrode is greater than or equal to 1.
Preferably, the first electrode and the second electrode are arranged oppositely in a staggered comb-tooth shape, or
The first electrode and the second electrode are oppositely arranged in a spirally staggered state.
Preferably, the first electrode and the second electrode both use reduced graphene oxide.
Preferably, the thickness of the oxide layer ranges between 2 μm and 20 μm.
Preferably, the oxide layer is made of graphene oxide.
Preferably, the substrate has a thickness in the range of 0.1mm to 2 mm.
Preferably, the substrate is made of glass or a polymer compound.
The invention also provides a preparation method of the super capacitor, which comprises the following steps:
preparing an oxide layer on the upper surface of the substrate;
reducing a preset area of the oxide layer by adopting an induction light beam with a first preset wavelength;
and inhibiting and reducing the preset area of the oxide layer by adopting a preset reduction inhibiting method to form a first electrode and a second electrode which are embedded in the oxide layer.
Preferably, the preset reduction inhibiting method is to inhibit reduction of a preset region of the oxide layer by using a second preset wavelength of the inhibiting light beam, or
The preset reduction inhibiting method is to inhibit and reduce a preset area of the oxide layer by adopting an ion processor.
Preferably, the preparing the oxide layer on the upper surface of the substrate includes:
and preparing the oxide layer on the upper surface of the substrate by adopting a spin-coating method or a dripping drying method.
Preferably, the oxide layer is made of graphene oxide.
Preferably, the first electrode and the second electrode both use reduced graphene oxide.
Preferably, the line widths of the first electrode and the second electrode are both between 100nm and 18000 nm.
The invention also provides a preparation method of the super capacitor, which comprises the following steps:
preparing an oxide layer with the water content of 2 wt% -20 wt% on the upper surface of the substrate by adopting a spin-coating method;
and photoetching a preset area of the oxide layer by adopting an induction beam with a first preset wavelength to form a first electrode and a second electrode which are embedded in the oxide layer.
The beneficial effects of the above technical scheme are that:
in the technical scheme, the line widths of the first electrode and the second electrode of the super capacitor are both 100nm-18000nm, and compared with the existing super capacitor, the specific surface area of the electrode is effectively increased, so that the energy density of the super capacitor is improved; according to the preparation method of the supercapacitor, the oxide layer is reduced by adopting the induced light beam with the first preset wavelength, and the preset area of the reduced oxide layer is inhibited by utilizing the preset inhibition reduction method, so that the electrode with the line width lower than 20 mu m is generated, and the specific surface area of the reduced graphene oxide in the supercapacitor is greatly improved.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a super capacitor according to the present invention;
FIG. 2 is a schematic diagram of a supercapacitor according to the present invention;
FIG. 3 is a schematic structural diagram of an embodiment of a conventional supercapacitor;
FIG. 4 is a flow chart of one embodiment of a method of making a supercapacitor according to the present invention;
FIG. 5 is a graph of electrode linewidths obtained with different power suppression beams;
FIG. 6 is a graph of specific capacity curves for supercapacitors of different line widths;
FIG. 7 is a schematic diagram of the cycling stability of a 100nm line width supercapacitor;
fig. 8 is a flow chart of another embodiment of the method for manufacturing the supercapacitor according to the present invention.
Detailed Description
The advantages of the invention are further illustrated in the following description of specific embodiments in conjunction with the accompanying drawings.
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
In the description of the present invention, it should be understood that the numerical references before the steps do not identify the order of performing the steps, but merely serve to facilitate the description of the present invention and to distinguish each step, and thus should not be construed as limiting the present invention.
Example one
Referring to fig. 1, a super capacitor of the present embodiment includes: a substrate 1, an oxide layer 2, a first electrode 3 and a second electrode 4;
an oxide layer 2 formed on the upper surface of the substrate 1;
wherein, the oxide layer 2 adopts graphene oxide. The graphene oxide has a large number of oxygen-containing groups on the surface, and has good solvent solubility and polymer affinity. The oxygen content of the oxygen-containing group is 30-40%, the water solubility is very good, and the content of a single layer after dissolution is more than 99%.
Considering that when the graphene oxide of the oxide layer 2 is too thin, the specific capacity of the formed electrode is too low; when the graphene oxide of the oxide layer 2 is too thick, the laser cannot penetrate the graphene oxide during the preparation process. Therefore, in the present embodiment, in order to ensure the content of the graphene oxide such that the specific capacity of the first electrode 3 and the second electrode 4 meets the requirement, the thickness of the oxide layer 2 is generally in the range of 2 μm to 20 μm. The effect is best when the thickness of the oxide layer 2 is 5 μm.
The first electrode 3 is embedded in the oxide layer 2, and the line width of the first electrode 3 is between 100nm and 18000 nm;
the second electrode 4 is embedded in the oxide layer 2, the second electrode 4 and the first electrode 3 are arranged at intervals, and the line width of the second electrode 4 is between 100nm and 18000 nm;
wherein the thickness of the first electrode and the second electrode is between 1 μm and 200 μm, and the thickness can be measured by a film thickness meter in practical application. The first electrode 3 and the second electrode 4 both adopt reduced graphene oxide. The reduced graphene oxide has the characteristic of high strength, and the carrier mobility of the reduced graphene oxide at room temperature is about 15000cm2V · s, the electron mobility is less affected by temperature change, and stability is good. It should be noted that: the reduced graphene oxide adopted by the first electrode 3 and the second electrode 4 is in a partially reduced state.
By way of example and not limitation, in practical applications, referring to fig. 2, graphene oxide of the oxide layer 2 may be irradiated by a 1080nm (nanometer) femtosecond laser a and a 800nm femtosecond laser b to form a first electrode 3 and a second electrode 4 having a line width of 100nm (see fig. 1). Wherein, 1080nm femtosecond laser irradiation is adopted to reduce the graphene oxide, and 800nm femtosecond laser irradiation is adopted to inhibit reduction so as to enable the line width of the formed electrode to be thinner.
Fig. 3 is a schematic structural diagram of a conventional super capacitor, in which the line width of an electrode 5 of the conventional super capacitor is much larger than the line widths of a first electrode 3 and a second electrode 4 in this embodiment. In this embodiment, the line widths of the first electrode 3 and the second electrode 4 of the supercapacitor are both between 100nm and 18000nm, which effectively increases the specific surface area of the reduced graphene oxide compared with the existing supercapacitor, thereby increasing the energy density of the supercapacitor.
Theoretically, the shorter the gap between the first electrode 3 and the second electrode 4 is, the more convenient the electron transfer between the two electrodes is. However, in practical applications, if the distance between the two electrodes is too close, the two electrodes are easily short-circuited, and therefore, in this embodiment, the ratio between the gap distance between the first electrode 3 and the second electrode 4 and the line width of the first electrode 3 or the second electrode 4 is greater than or equal to 1, for example: 1:1 or 6: 5.
In this embodiment, in order to ensure that the two electrodes are close enough to each other and do not contact each other, so as to reduce the distance of electron transmission between the electrodes, a staggered comb-tooth type may be adopted to ensure the distance of electron transmission between the electrodes. Referring to fig. 1, the first electrodes 3 and the second electrodes 4 are disposed in a staggered comb-tooth shape. In practical application, the staggered comb tooth type is convenient to draw.
By way of example and not limitation, the positional relationship between the first electrode 3 and the second electrode 4 in the present embodiment may also take any one of the following forms:
the first electrode 3 and the second electrode 4 are oppositely arranged in a spiral staggered state; the first electrode 3 and the second electrode 4 are arranged in a wave shape with two parallel opposite directions, the first electrode 3 and the second electrode 4 are arranged in a shape of a Chinese character 'hui', and the first electrode 3 and the second electrode 4 are arranged in a ring shape or in other geometric shapes.
In practical application, in order to assemble the supercapacitor in the ionic liquid electrolyte, the electrode of the supercapacitor can be immersed in EMIMBF4 (1-ethyl-3-methylimidazolium tetrafluoroborate), and the electrode is sealed for electrochemical measurement.
In this embodiment, glass or a polymer compound may be used for the substrate 1. Glass and high molecular compounds have good insulation and corrosion resistance, and particularly, high molecular compounds have good mechanical strength.
It should be noted that: the thickness of the substrate 1 is typically in the range of 0.1mm-2 mm.
Example two
Referring to fig. 1, fig. 2 and fig. 4, a method for manufacturing a super capacitor according to the present embodiment includes:
s11, preparing an oxide layer on the upper surface of the substrate 1;
further, the oxide layer 2 may be prepared on the upper surface of the substrate 1 by a spin coating method or a drop drying method.
In this embodiment, glass or a polymer compound may be used for the substrate 1. Glass and high molecular compounds have good insulation and corrosion resistance, and particularly, high molecular compounds have good mechanical strength.
It should be noted that: the thickness of the substrate 1 is typically in the range of 0.1mm-2 mm.
It should be noted that: the oxide layer 2 can adopt graphene oxide; the graphene oxide has a large number of oxygen-containing groups on the surface, and has good solvent solubility and polymer affinity. The oxygen content of the oxygen-containing group is 30-40%, the water solubility is very good, and the content of a single layer after dissolution is more than 99%.
By way of example and not limitation, when the spin coating method is adopted, graphene oxide can be dispersed in an organic solvent, then the organic solvent is dripped on the surface of the substrate 1, the thickness of the oxide layer 2 is controlled by changing the concentration of the graphene oxide in the organic solvent, the spraying time and the spraying speed (for example: the concentration of the graphene oxide is 0.2g/L-10g/L, the spraying time is 0.5h-30h, and the spraying speed is 2m/s-5.5m/s), and the graphene oxide enters the surface of the substrate 1 under rotation, wherein the organic solvent is a volatile organic solvent, such as ethanol or acetonitrile. The graphene oxide membrane with high specific surface, controllable thickness and larger aperture can be prepared by adopting a spin-coating method. When a drop-wise drying method is adopted, graphene oxide dispersed in an organic solvent is dropped on the surface of the substrate 1, the thickness of the oxide layer 2 is controlled by changing the concentration of the graphene oxide in the organic solvent, and the organic solvent is volatilized on a heating plate to form an oxide layer film.
It should be noted that: considering that when the graphene oxide of the oxide layer 2 is too thin, the specific capacity of the formed electrode is too low; when the graphene oxide of the oxide layer 2 is too thick, the laser cannot penetrate the graphene oxide during the preparation process. Therefore, in the present embodiment, in order to ensure the content of the graphene oxide such that the specific capacity of the first electrode 3 and the second electrode 4 meets the requirement, the thickness of the oxide layer 2 is generally in the range of 2 μm to 20 μm.
S12, reducing the preset area of the oxide layer 2 by adopting an induction light beam with a first preset wavelength;
wherein, the inducing light beam with the first preset wavelength can adopt a laser with 900nm-1200nm, and the power of the laser needs to be 2mW/cm2The above.
By way of example and not limitation, a 1080nm femtosecond laser may be used to irradiate the graphene oxide on a predetermined region of the oxide layer 2 to reduce the graphene oxide.
And S13, inhibiting and reducing the preset area of the oxide layer 2 by adopting a preset reduction inhibition method to form a first electrode 3 and a second electrode 4 which are embedded in the oxide layer 2.
Wherein the first electrode 3 and the second electrode 4 both adopt reduced graphene oxide; the line widths of the first electrode 3 and the second electrode 4 are both between 100nm and 18000 nm.
Further, in step S13, the preset reduction inhibiting method is to inhibit the reduction of the preset region of the oxide layer 2 by using a second preset wavelength of the inhibiting light beam.
Wherein, the inhibiting light beam with the second preset wavelength can adopt laser with the wavelength of 300nm-800nm, and the power of the laser needs to be 2mW/cm2The above.
By way of example and not limitation, the reduced graphene oxide subjected to 1080nm femtosecond laser lithography can be irradiated by an 800nm femtosecond laser to inhibit reduction of the graphene oxide, so that the line width of the formed electrode is thinner, and the specific surface area of the reduced graphene oxide in the supercapacitor is increased.
By adjusting the power of the induced light beam and the suppressed light beam, the electrodes of the super capacitor with different line widths can be obtained. Referring to fig. 5, for example, 1080nm induced beam of 2mW and 800nm suppressed beam of different power are used, the line width of the obtained electrode is in the range of 100nm-450nm, and the line width of the electrode is far lower than that of the existing laser lithography record of 20 μm graphene film.
As shown in fig. 6, the supercapacitors with different line widths show different specific capacities at different current densities. Wherein c1 represents a supercapacitor with an electrode line width of 100nm, c2 represents a supercapacitor with an electrode line width of 200nm, c3 represents a supercapacitor with an electrode line width of 450nm, and c4 represents a supercapacitor with an electrode line width of 1000 nm. The super capacitor with the superfine structure and the line width of 100nm shows extremely high specific capacity of 402F/g under the condition that the current density is 1A/g, the working voltage of the super capacitor is 3.5V when EMIMBF4 electrolyte is used, the maximum energy density can reach 171W/kg, and the performance of the super capacitor is greatly improved. Experiments prove that the super capacitor with the line width of 100nm prepared by the embodiment has excellent cycling stability (refer to fig. 7), and the specific capacity of 93% is still maintained after over 20000 charging and discharging cycles.
Further, in step S13, the predetermined reduction inhibiting method is to inhibit reducing the predetermined region of the oxidized layer 2 by using an ion processor.
Specifically, the graphene oxide reduced by the induced light beam with the first preset wavelength can be placed in an ion processor with the voltage of 220V and the power of 40KHz for 2min to 2h to inhibit the reduction of the graphene oxide, so that the line width of the formed electrode is thinner, and the specific surface area of the reduced graphene oxide in the super capacitor is increased.
In the embodiment, the induced light beam with the first preset wavelength is adopted to reduce the graphene oxide, and the reduction of the graphene oxide is inhibited by a preset reduction inhibition method, so that an electrode with a line width lower than 20 μm is generated, and the specific surface area of the reduced graphene oxide in the super capacitor is greatly improved.
EXAMPLE III
Referring to fig. 8, a method for manufacturing a super capacitor according to the embodiment includes:
s21, preparing an oxide layer 2 with the water content of 2-20 wt% on the upper surface of the substrate 1 by adopting a spin-coating method;
in this embodiment, glass or a polymer compound may be used for the substrate 1. Glass and high molecular compounds have good insulation and corrosion resistance, and particularly, high molecular compounds have good mechanical strength.
It should be noted that: the thickness of the substrate 1 is typically in the range of 0.1mm-2 mm.
The oxide layer 2 can be graphene oxide; the graphene oxide has a large number of oxygen-containing groups on the surface, and has good solvent solubility and polymer affinity. The oxygen content of the oxygen-containing group is 30-40%, the water solubility is very good, and the content of a single layer after dissolution is more than 99%.
Further, when the spin coating method is used, graphene oxide having a water content of 2 wt% to 20 wt% may be dispersed in an organic solvent, and then the organic solvent may be dropped onto the surface of the substrate 1, and the graphene oxide may enter the surface of the substrate 1 under rotation, wherein the organic solvent is a volatile organic solvent, such as ethanol or acetonitrile.
And S22, photoetching a preset area of the oxide layer 2 by using an induction light beam with a first preset wavelength to form a first electrode 3 and a second electrode 4 which are embedded in the oxide layer 2.
The first preset wavelength of the induced light beam is 900nm-1200nm laser. The first electrode 3 and the second electrode 4 both adopt reduced graphene oxide; the line widths of the first electrode 3 and the second electrode 4 are both between 100nm and 18000 nm.
In practical application, due to the fact that the water content of the graphene oxide of the oxide layer 2 is high, the graphene oxide is reduced in a preset area where the graphene oxide is etched by a 1080nm femtosecond laser, the line width of a formed electrode can be made thinner, and therefore the specific surface area of the reduced graphene oxide in the super capacitor is improved.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (15)
1. An ultracapacitor, comprising:
a substrate;
the oxide layer is formed on the upper surface of the substrate;
the first electrode is embedded in the oxide layer, and the line width of the first electrode is between 100nm and 18000 nm;
the second electrode is embedded in the oxide layer, the second electrode and the first electrode are arranged at intervals, and the line width of the second electrode is between 100nm and 18000 nm.
2. The supercapacitor according to claim 1, wherein the ratio between the gap distance between the first electrode and the second electrode and the line width of the first electrode or the second electrode is greater than or equal to 1.
3. The supercapacitor according to claim 1, wherein the first and second electrodes are arranged in an opposing, staggered comb-tooth pattern, or
The first electrode and the second electrode are oppositely arranged in a spirally staggered state.
4. The supercapacitor according to claim 1, 2 or 3, wherein the first electrode and the second electrode both employ reduced graphene oxide.
5. The supercapacitor according to claim 1, wherein the oxide layer has a thickness in the range of 2-20 μm.
6. The supercapacitor according to claim 1 or 5, wherein the oxide layer is graphene oxide.
7. The supercapacitor according to claim 1, wherein the substrate has a thickness in the range of 0.1mm-2 mm.
8. The supercapacitor according to claim 1 or 7, wherein the substrate is made of glass or a polymer compound.
9. A preparation method of a super capacitor is characterized by comprising the following steps:
preparing an oxide layer on the upper surface of the substrate;
reducing a preset area of the oxide layer by adopting an induction light beam with a first preset wavelength;
and inhibiting and reducing the preset area of the oxide layer by adopting a preset reduction inhibiting method to form a first electrode and a second electrode which are embedded in the oxide layer.
10. The method according to claim 9, wherein the predetermined suppression reduction method is a predetermined region for suppressing reduction of the oxidized layer using a suppression beam of a second predetermined wavelength, or the predetermined suppression reduction method is a predetermined region for suppressing reduction of the oxidized layer using an ion processor.
11. The method for preparing the supercapacitor according to claim 9, wherein the preparing the oxide layer on the upper surface of the substrate comprises:
and preparing the oxide layer on the upper surface of the substrate by adopting a spin-coating method or a dripping drying method.
12. The method for preparing the supercapacitor according to claim 9, wherein the oxide layer is made of graphene oxide.
13. The method for preparing the supercapacitor according to claim 9, wherein the first electrode and the second electrode both adopt reduced graphene oxide.
14. The method for preparing the supercapacitor according to claim 9, wherein the line widths of the first electrode and the second electrode are both between 100nm and 18000 nm.
15. A preparation method of a super capacitor is characterized by comprising the following steps:
preparing an oxide layer with the water content of 2 wt% -20 wt% on the upper surface of the substrate by adopting a spin-coating method;
and photoetching a preset area of the oxide layer by adopting an induction beam with a first preset wavelength to form a first electrode and a second electrode which are embedded in the oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010656283.0A CN111816458B (en) | 2020-07-09 | 2020-07-09 | Super capacitor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010656283.0A CN111816458B (en) | 2020-07-09 | 2020-07-09 | Super capacitor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111816458A true CN111816458A (en) | 2020-10-23 |
| CN111816458B CN111816458B (en) | 2022-10-04 |
Family
ID=72843217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010656283.0A Active CN111816458B (en) | 2020-07-09 | 2020-07-09 | Super capacitor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111816458B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810163A (en) * | 2014-07-18 | 2015-07-29 | 纳米新能源（唐山）有限责任公司 | Graphene supercapacitor and preparation method thereof, and energy storage system |
| CN105002595A (en) * | 2015-07-21 | 2015-10-28 | 中国科学院宁波材料技术与工程研究所 | Polymer composite function fibers containing partial graphene, and preparation method thereof |
| CN105576123A (en) * | 2016-01-08 | 2016-05-11 | 中国计量学院 | Full-graphene group flexible organic field-effect transistor and manufacturing method thereof |
| US20160228846A1 (en) * | 2015-02-05 | 2016-08-11 | National Cheng Kung University | Three-dimensional graphene oxide microstructure and method for making the same |
| CN107161990A (en) * | 2017-04-27 | 2017-09-15 | 北京化工大学 | A kind of method that one-step method laser reduction prepares heterojunction structure functional graphene film |
| CN108074752A (en) * | 2016-11-10 | 2018-05-25 | 中国科学院大连化学物理研究所 | A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor |
-
2020
- 2020-07-09 CN CN202010656283.0A patent/CN111816458B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810163A (en) * | 2014-07-18 | 2015-07-29 | 纳米新能源（唐山）有限责任公司 | Graphene supercapacitor and preparation method thereof, and energy storage system |
| US20160228846A1 (en) * | 2015-02-05 | 2016-08-11 | National Cheng Kung University | Three-dimensional graphene oxide microstructure and method for making the same |
| CN105002595A (en) * | 2015-07-21 | 2015-10-28 | 中国科学院宁波材料技术与工程研究所 | Polymer composite function fibers containing partial graphene, and preparation method thereof |
| CN105576123A (en) * | 2016-01-08 | 2016-05-11 | 中国计量学院 | Full-graphene group flexible organic field-effect transistor and manufacturing method thereof |
| CN108074752A (en) * | 2016-11-10 | 2018-05-25 | 中国科学院大连化学物理研究所 | A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor |
| CN107161990A (en) * | 2017-04-27 | 2017-09-15 | 北京化工大学 | A kind of method that one-step method laser reduction prepares heterojunction structure functional graphene film |
Non-Patent Citations (3)
| Title |
|---|
| DAOZHI SHEN，ECT.: "Scalable High-Performance Ultraminiature Graphene Micro-Supercapacitors by a Hybrid Technique Combining Direct Writing and Controllable Microdroplet Transfer", 《ACS》 * |
| 严如玉: "石墨烯膜和氧化石墨烯膜的飞秒激光微纳加工", 《中国优秀硕士学位论文全文数据库（电子期刊）工程科技Ⅰ辑》 * |
| 陈招弟等: "激光还原氧化石墨烯制备薄膜柔性电子器件", 《激光与光电子学进展》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111816458B (en) | 2022-10-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109074958B (en) | Hybrid capacitor and method for manufacturing capacitor | |
| Suppes et al. | A polypyrrole/phosphomolybdic acid∣ poly (3, 4-ethylenedioxythiophene)/phosphotungstic acid asymmetric supercapacitor | |
| US9312078B2 (en) | Patterned graphite oxide films and methods to make and use same | |
| Yadav et al. | Nonaqueous, redox‐active gel polymer electrolyte for high‐performance supercapacitor | |
| Murugadoss et al. | Development of electrospun PAN/CoS nanocomposite membrane electrolyte for high-performance DSSC | |
| KR100414357B1 (en) | Conducting Polymer Coated Electrode of Metal Oxide Electrochemical Pseudocapacitor and Method of Manufacturing the Same | |
| CN104637694A (en) | Micro super capacitor nano-device based on porous graphene-supported polyaniline heterostructure and manufacturing method thereof | |
| ES2940324T3 (en) | Method for the manufacture of aluminum electrolytic capacitors with solid electrolyte | |
| TW200919511A (en) | Method for manufacturing electrolytic capacitor and electrolytic capacitor | |
| JP2012191178A (en) | Electrolytic capacitor and manufacturing method of the same | |
| JP2006351289A (en) | Manufacturing method of porous material and product using obtained porous material | |
| Cevik et al. | Design of high‐performance flexible symmetric supercapacitors energized by redox‐mediated hydrogels including metal‐doped acidic polyelectrolyte | |
| JP2017123471A (en) | Current conducting electrode and method for manufacturing the same | |
| CN111816458B (en) | Super capacitor and preparation method thereof | |
| Nie et al. | Highly Stable Supercapacitors Enabled by a New Conducting Polymer Complex PEDOT: CF3SO2 (x) PSS (1‐x) | |
| JP2007250994A (en) | Conductive polymer redox type electrochemical element used as polar device | |
| JP2000216061A (en) | Manufacture for solid-state electrolytic capacitor | |
| Machida et al. | Electrochemical investigation of PEDOT counter electrode for dye-sensitized solar cells | |
| KR101724434B1 (en) | High-voltage/high-power supercapacitor operatable at 3.2v | |
| JPH0974050A (en) | Capacitor and its manufacture | |
| JP3551118B2 (en) | Capacitor and manufacturing method thereof | |
| KR970005086B1 (en) | Tantalium electrolytic condenser producing method | |
| JP2009252913A (en) | Method of manufacturing solid electrolytic capacitor | |
| KR102337435B1 (en) | Electrolytic capacitor and manufacturing method thereof | |
| JP2003203826A (en) | Aluminum electrolytic capacitor and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: Room 309, Floor 3, Building 21, No. 999, Xiangyin Road, Yangpu District, Shanghai, 200082 Patentee after: Luan Haitao Patentee after: Chen Xi Patentee after: Zhang Qiming Patentee after: Gu Min Address before: Room 1208, Xianghe Apartment, No. 233, Hongguan Road, Hongkou District, Shanghai, 200093 Patentee before: Luan Haitao Patentee before: Chen Xi Patentee before: Zhang Qiming Patentee before: Gu Min |
|
| CP02 | Change in the address of a patent holder |