CN111799144B

CN111799144B - Substrate processing apparatus

Info

Publication number: CN111799144B
Application number: CN202010212338.9A
Authority: CN
Inventors: 孙洪俊
Original assignee: TES Co Ltd
Current assignee: TES Co Ltd
Priority date: 2019-04-03
Filing date: 2020-03-24
Publication date: 2023-09-29
Anticipated expiration: 2040-03-24
Also published as: CN111799144A; KR20200117337A; KR102228545B1

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of performing temperature control and plasma density control of a center portion and an edge of a substrate when a process such as vapor deposition or etching is performed on the substrate, and further capable of performing particle control of a region below a substrate support portion when a cleaning process is performed inside a chamber. The substrate processing apparatus includes: a chamber providing an accommodation space for accommodating the substrate; a gas supply part provided inside the chamber and supplying a process gas or a cleaning gas; a substrate supporting portion provided inside the chamber and supporting the substrate; and a moving ring disposed between the substrate supporting part and an inner wall of the chamber to be capable of being lifted up and down, and having at least one of a heater for heating the substrate, an electrode to which an RF power is supplied, and a ground part.

Description

Substrate processing apparatus

Technical Field

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of performing temperature control and plasma density control of a center portion and an edge of a substrate when a process such as vapor deposition or etching is performed on the substrate, and further capable of performing particle control of a region below a substrate support portion when a cleaning process is performed inside a chamber.

Background

Recently, with miniaturization and high integration of semiconductor devices, it is necessary to control the line width of nanometer units on a substrate, and at this time, uniformity of a thin film deposited on the substrate plays a significant role in a deposition process or an etching process.

In the basic processing apparatus of the related art, in which a vapor deposition process, an etching process, or the like is performed on a substrate, a very high temperature is maintained in the center portion of the substrate support portion, but the temperature is relatively low in the inner wall of the chamber or in the region adjacent to the substrate inlet/outlet, and the thermal equilibrium is not balanced in the chamber.

In addition, in other types of conventional substrate processing apparatuses that perform vapor deposition processes, etching processes, and the like using plasma, it is not easy to maintain plasma density uniformity in the center portion of the substrate support portion and the edge of the substrate support portion.

As described above, if the heat balance or the plasma density balance is not balanced in the chamber, there is a problem that it is difficult to control the film quality such as the uniformity of the film in the process of depositing the film on the substrate or etching the substrate.

In particular, the basic processing apparatus of the related art has difficulty in controlling film quality such as uniformity of thin films at the center and edges of the substrate support section.

In addition, when a process of depositing a thin film on a substrate is performed inside a chamber of a substrate processing apparatus, foreign substances such as particles may be formed in the remaining area of the chamber other than the substrate.

In this case, the cleaning process is performed to remove the particles, and in the conventional substrate processing apparatus, the cleaning process is performed by using a plasma generating section used in the thin film deposition process. For example, in a conventional substrate processing apparatus, an upper electrode to which an RF electrode is applied is provided above, and a lower electrode grounded to a substrate support portion is provided, and plasma is generated between the upper electrode and the lower electrode to clean the inside of a chamber.

However, the related art cleaning process generates plasma between the upper electrode and the lower electrode of the substrate supporting part to perform the cleaning process, and thus it is not easy to remove particles located in a lower region of the substrate supporting part. In order to solve such a problem, the substrate support portion is reduced as much as possible to perform the cleaning process, but in this case, particles in the region below the substrate support portion are not easily removed.

Disclosure of Invention

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate processing apparatus capable of realizing temperature control or plasma density control in a central portion and an edge region of a substrate support portion when a vapor deposition process, an etching process, or the like is performed on a substrate.

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate processing apparatus capable of easily removing and cleaning foreign matters such as particles formed in a region below a substrate support portion in the substrate processing apparatus.

The object of the present invention as described above is achieved by a substrate processing apparatus comprising: a chamber providing an accommodation space for accommodating the substrate; a gas supply part provided inside the chamber and supplying a process gas or a cleaning gas; a substrate supporting portion provided inside the chamber and supporting the substrate; and a moving ring disposed between the substrate supporting part and an inner wall of the chamber to be capable of being lifted up and down, and having at least one of a heater for heating the substrate, an electrode to which an RF power is supplied, and a ground part.

Wherein the temperature profile of the substrate may be adjusted by varying the relative height of the moving ring to the substrate when the moving ring heats the substrate, or the plasma density above the substrate may be adjusted by varying the relative height of the moving ring to the substrate when RF power is applied to the moving ring.

On the other hand, the moving ring may be arranged to surround an edge of the substrate support.

Further, the moving ring may be divided into two or more regions along the edge of the substrate supporting part to heat the substrate, or the moving ring may be divided into two or more regions along the edge of the substrate supporting part to be applied with the RF power.

On the other hand, when the moving ring is provided with the heater, the heater may be constituted by two or more divided heaters, and when the moving ring is provided with the electrode, the electrode may be constituted by two or more divided electrodes, and the divided heaters or the divided electrodes may be arranged on the moving ring so as to surround an edge of the substrate supporting portion.

In addition, the moving ring may include two or more divided moving rings disposed between the substrate supporting portion and an inner wall of the chamber, the two or more moving rings being provided to be capable of being lifted by themselves.

Further, each of the divided moving rings may be provided with a heater for heating the substrate or an electrode to which an RF power is supplied.

In one aspect, the substrate processing apparatus may further include a first RF power supply unit connected to the gas supply unit and the substrate support unit, and selectively supplying RF power to the gas supply unit or the substrate support unit.

In this case, the first RF power supply unit may be connected to the moving ring, and the first RF power supply unit may selectively supply RF power to the moving ring when the gas supply unit is grounded.

Further, when the moving ring is provided with the electrode, the substrate processing apparatus may further include a second RF power supply unit that supplies RF power to the moving ring.

According to the present invention having the above-described structure, a moving ring is provided between the substrate support and the inner wall of the chamber, the moving ring being capable of lifting and lowering and heating the substrate and being applied with RF power, thereby enabling temperature control and plasma density control in the central portion and the edge region of the substrate support.

Therefore, the substrate processing apparatus of the present invention can not only maintain the uniformity of the thin film at the center and the edge of the substrate at a constant level, but also can exhibit a desired thin film profile by controlling the temperature and the plasma density at the center and the edge of the substrate support.

In addition, according to the present invention having the above-described configuration, the height of the moving ring is made lower than the substrate supporting portion, and plasma is generated near the lower region of the substrate supporting portion, so that particles and the like around the lower region of the processing space of the chamber can be easily and effectively removed.

Drawings

Fig. 1 is a side sectional view showing the structure of a basic processing apparatus of an embodiment of the present invention.

Fig. 2 is a perspective view illustrating the substrate support part and the moving ring in fig. 1.

Fig. 3 is a plan view showing an internal structure of the moving ring.

Fig. 4 is a diagram showing a change in profile of a thin film deposited on a substrate with a change in height of a movable ring in a deposition process of an embodiment.

Fig. 5 is a diagram showing a change in profile of a thin film deposited on a substrate according to a change in height of a movable ring in a deposition process according to another embodiment.

Fig. 6 is a side cross-sectional view showing the height of a moving ring in a cleaning process below a chamber.

Fig. 7 is a partial perspective view showing a moving ring according to another embodiment of the present invention together with a substrate support portion.

Fig. 8 is a perspective view of the shift ring of fig. 7.

Fig. 9 is a view showing a profile of a thin film deposited on a substrate when the heights of two or more divided moving rings are different in a deposition process.

Description of the reference numerals

110: chamber, 112: chamber lid, 114: side wall, 200: air supply portion, 300: substrate supporting portion, 310: second electrode, 500, 1500: the ring is moved.

Detailed Description

The structure of the substrate processing apparatus according to the embodiment of the present invention is described in detail below with reference to the drawings.

Fig. 1 is a side sectional view showing the structure of a basic processing apparatus 1000 of an embodiment of the present invention.

Referring to fig. 1, the substrate processing apparatus 1000 may include: a chamber 110 providing a processing space 120 for performing various processes on a substrate W; a gas supply part 200 provided inside the chamber 110 to supply a process gas or a cleaning gas; a substrate support 300 provided in the chamber 110 and supporting the substrate W; and a moving ring 500 disposed between the substrate supporting part 300 and an inner wall of the chamber 110 and provided to be capable of ascending and descending, and having at least one of a heater 520 for heating the substrate W, an electrode 530 to which an RF power is supplied, and a ground.

The chamber 110 provides a processing space 120 therein for processing the substrate. Specifically, the chamber 110 may be provided with a chamber lid 112 and a sidewall 114. The sidewall 114 may have a substrate inlet/outlet 115 for carrying in or carrying out the substrate W.

The chamber 110 may include an air supply portion 200 therein. The gas supply part 200 may be disposed inside the chamber 110, i.e., above the processing space 120. The gas supply part 200 may supply a process gas suitable for performing various treatment processes such as a vapor deposition process, an etching process, and the like on the substrate, and a cleaning gas capable of cleaning the inside of the chamber 110 in a cleaning process.

The process gas or the cleaning gas may be supplied to the buffer space 220 of the gas supply part 200 through the gas supply port 111 of the chamber cover 112. In the buffer space 220, the process gas or the cleaning gas may be supplied toward the inside of the substrate W or the chamber 110 through the injection holes 210 of the gas supply part 200.

On the other hand, RF power may be applied to the air supply unit 200. That is, when RF power is applied to the gas supply part 200, the gas supply part 200 may function as a first electrode. Although the embodiment in which the air supply portion 200 is formed of the first electrode is shown in the drawings, the present invention is not limited thereto, and the air supply portion 200 and the first electrode may be separately provided.

When RF power is applied to the gas supply unit 200, the gas supply unit 200 may be insulated from the chamber 110 by an insulator, not shown.

On the other hand, the processing space 120 inside the chamber 110 may include a substrate support 300. The substrate W is supported by being placed on the upper surface of the substrate support 300, and the process gas supplied from the gas supply unit 200 may be supplied toward the substrate W. The substrate supporting part 300 may be provided to be movable up and down by a predetermined distance.

For example, a driving rod 305 may be formed to extend downward on the central bottom surface of the substrate support 300. The driving rod 305 may extend outward through the first through hole 119 of the chamber 110 to be connected to a driving part (not shown). The substrate support part 300 may be moved up and down by driving the driving part.

The substrate support 300 may further include a second electrode 310. As shown in the drawing, the second electrode 310 may be embedded in the substrate support 300.

In addition, when the substrate support part 300 may be provided with the first heater 320, the substrate W or the chamber 110 may be heated to a predetermined temperature when performing a deposition process and an etching process on the substrate or performing a cleaning process on the chamber 110, etc., thereby improving the process efficiency.

On the other hand, the substrate processing apparatus 1000 may include a first RF power supply unit 400 for supplying RF power. The first RF power supply unit 400 is connected to the gas supply unit 200 and the substrate support unit 300, and may supply RF power to the gas supply unit 200 or the substrate support unit 300. That is, the first RF power supply part 400 may selectively supply power to the second electrode 310 of the substrate support part 300 and the gas supply part 200.

In this case, the first RF power supply part 400 may be connected to a first matching part 430 that supplies RF power to the gas supply part 200 and a second matching part 440 that supplies RF power to the second electrode 310 through a first switching part 410.

Accordingly, the first RF power supply part 400 may selectively apply RF power to the gas supply part 200 and the second electrode 310 by the operation of the first switching part 410.

When RF power is applied to the gas supply part 200 through the first switching part 410, the second electrode 310 may be grounded through the second matching part 440. In addition, when RF power is applied to the second electrode 310 through the first switching part 410, the gas supply part 200 may be grounded through the first matching part 430.

Although not shown, the gas supply unit 200 and the second electrode 310 may be provided with different power supply units.

On the other hand, recently, with miniaturization and high integration of semiconductor devices, it is necessary to control the line width of nanometer units on a substrate, and at this time, uniformity of a thin film deposited on the substrate plays a significant role in a deposition process or an etching process.

As described above, if the heat balance or the plasma density balance is not balanced in the chamber, there is a problem that it is difficult to control the film quality such as uniformity of the film in the process of depositing the film on the substrate or etching the substrate. In particular, the conventional basic processing apparatus has difficulty in controlling film quality such as uniformity of thin films at the center and edges of the substrate support section.

In order to solve the problems of the prior art, the present invention includes a moving ring 500 inside the chamber 110.

Fig. 2 is a perspective view showing the substrate support 300 and the moving ring 500.

Referring to fig. 1 and 2, the moving ring 500 may be disposed between the substrate support 300 and an inner wall of the chamber 110. The moving ring 500 may be disposed to be up and down between the substrate support 300 and the inner wall of the chamber 110.

It is possible to adjust a temperature profile (profile) of the substrate W when the substrate W is heated by setting the relative height of the moving ring 500 to the substrate W to be different, or to adjust a plasma density above the substrate W by setting the relative height of the substrate W to be different when an RF power is applied to the moving ring 500.

For example, the shift ring 500 may include: a ring member 510 disposed to surround an edge of the substrate support 300; and a support rod 512 formed to extend downward from the ring member 510.

The ring member 510 is spaced apart from the substrate support 300 and is disposed between the substrate support 300 and an inner wall of the chamber 100. In this case, the ring member 510 may be disposed to surround an edge of the substrate support 300 between the substrate support 300 and an inner wall of the chamber 110.

The support rod 512 may extend outward through the second through hole 117 of the chamber 110, and may be connected to a driving unit (not shown). The ring member 510 is movable up and down by driving of the driving part.

On the other hand, the ring member 510 may be provided with a second heater 520 for heating the substrate W or for heating the inside of the chamber 110. The second heater 520 is illustrated as being built in the ring member 520, but is not limited thereto.

On the other hand, referring to fig. 1, a third electrode 530 for supplying RF power may be disposed at the ring member 510. By applying RF power to the third electrode 530, process quality may be improved in an evaporation process, an etching process, or a cleaning process.

For example, the substrate processing apparatus 1000 may include a second RF power supply unit 600 for supplying RF power, and the second RF power supply unit 600 may supply power to the moving ring 500.

Although not shown, a power may be supplied to the moving ring 500 through the first RF power supply unit 400. In this case, RF power may be supplied to the gas supply part 200, the substrate support part 300, and the moving ring 500 through the first RF power supply part 400. For example, when the first RF power supply part 400 is connected to the moving ring 500 and the gas supply part 200 is grounded, RF power may be selectively supplied to the moving ring 500.

In addition, the second RF power supply unit 600 may supply RF power to the substrate support unit 300 together with the moving ring 500, and in this case, the first RF power supply unit 400 may supply power only to the gas supply unit 200.

Hereinafter, a case where only the power is supplied to the moving ring 500 by the second RF power supply part 600 will be described.

That is, the second RF power supply part 600 may be connected to a third matching part 620 that supplies RF power to the third electrode 530 of the moving ring 500 through a second switching part 610.

Accordingly, an RF power may be applied to the third electrode 530 by the operation of the second switching part 610, or the third electrode 530 may be grounded.

On the other hand, the moving ring 500 may be divided into two or more regions along the edge of the substrate support 300, the substrate W may be heated, or the RF power may be applied to two or more regions along the edge of the substrate support 300.

In this case, the second heater 520 and the third electrode 530 may be separately provided to the ring member 510. For example, the second heater 520 and the third electrode 530 may be divided into two or more divided heaters 5200A to 5200D (see fig. 3) or two or more divided electrodes 5300A to 5300D (see fig. 3) in the ring member 510.

Fig. 3 is a plan view of the ring member 510 including the split heaters 5200A to 5200D and the split electrodes 5300A to 5300D, and illustrates the split heaters 5200A to 5200D and the split electrodes 5300A to 5300D provided inside the ring member 510.

Referring to fig. 2 and 3, the split heaters 5200A-5200D and the split electrodes 5300A-5300D can be disposed along the ring member 510 around the edge of the substrate support 300.

Fig. 3 shows a configuration in which the split heaters 5200A to 5200D and the split electrodes 5300A to 5300D are divided into 4, but this is merely an example, and can be modified in an appropriate number.

On the other hand, when the second heater 520 is divided into two or more divided heaters 5200A to 5200D, the respective divided heaters 5200A to 5200D can be adjusted to be driven individually. In this case, the driving of the split heaters 5200A to 5200D can be controlled along the ring member 510 to adjust the temperature profile of the edge region of the substrate W.

When the third electrode 530 is divided into two or more divided electrodes 5300A to 5300D, each of the divided electrodes 5300A to 5300D may be adjusted to be supplied with RF power independently. In this case, whether or not RF power is applied to the divided electrodes 5300A to 5300D may be controlled along the ring member 510 to adjust the plasma density profile of the edge region of the substrate W.

Further, when the divided electrodes 5300A to 5300D are provided, an intermediate insulator 590 may be disposed between the respective divided electrodes 5300A to 5300D.

On the other hand, fig. 3 shows a case where the ring member 510 includes all of the split heaters 5200A to 5200D and the split electrodes 5300A to 5300D, but the present invention is not limited thereto. For example, the second heater 520 may be formed of one member and the third electrode 530 may be divided, or the third electrode 530 may be formed of one member and the second heater 520 may be divided. In the structure in which only the second heater 520 is divided, the intermediate insulator 590 may be omitted.

In the substrate processing apparatus 1000 having the above-described structure, a method of performing a vapor deposition process and an etching process on the substrate W or performing a cleaning process on the inside of the chamber 110 will be described below.

First, when a deposition process is performed on the substrate W by a PECVD (plasma enhanced chemical vapor deposition method; plasma Enhanced Chemical Vapor Deposition) method, an RF power can be applied to the gas supply portion 200 by the first RF power supply portion 400 by operating the first switch portion 410. In this case, the substrate supporting part 300 supporting the substrate W may be grounded through the second matching part 440.

On the other hand, the moving ring 500 may be electrically grounded to function as a heating of the substrate W. That is, by the operation of the second switching part 610, the moving ring 500 is grounded through the third matching part 620, and the second heater 520 of the moving ring 500 is driven, so that the substrate W can be heated to a preset temperature.

When the second heater 520 of the moving ring 500 is driven to heat the substrate W, the edge region of the substrate supporting part 300 is also heated. Therefore, compared with the case where the substrate W is heated only by the substrate support 300, the center portion and the edge of the substrate support 300 can be kept in thermal equilibrium.

Fig. 4 is a view showing a change in the profile of a thin film deposited on a substrate W according to a change in the height of a ring member 510 of the movable ring 500 in a deposition process in which the movable ring 500 is operated as a heater by the PECVD method.

Referring to fig. 4, it can be assumed that (a) of fig. 4 is a contour of a thin film deposited on the substrate W when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same.

As shown in fig. 4 (a), when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, the temperature of the edge region of the substrate W is prevented from decreasing by the moving ring 500, and the thickness of the thin film deposited on the substrate W is kept constant.

However, due to various factors such as the temperature inside the chamber 110, the plasma density, etc., even in the case where the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, when the profile of the thin film deposited on the substrate W is different from that of fig. 4 (a), adjustment by the moving ring 500 is required.

For example, fig. 4 (B) shows the outline of a thin film deposited on the substrate W when the height of the ring member 510 of the moving ring 500 is relatively lower than the height of the substrate W.

As shown in fig. 4 (B), when the height of the ring member 510 of the moving ring 500 is relatively lower than the height of the substrate W, the heat released from the ring member 510 is blocked by the substrate support 300, and the amount of transfer toward the substrate W is reduced. Therefore, the temperature of the edge region is lower than that of the center portion of the substrate W. In this case, the process gas is decomposed by the plasma, and the lower the temperature is, the lower the density of the thin film is, and thus the thickness of the deposited thin film becomes thicker. Therefore, the profile of the thin film deposited on the substrate W may be thicker in the edge region of the substrate W than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thinner at the edge region of the substrate W than at the center of the substrate W when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, the profile of the thin film deposited on the substrate W may be set to be lower than the substrate W so that the profile of the thin film deposited on the substrate W is maintained at a constant thickness as shown in fig. 4 (B).

On the other hand, fig. 4 (C) shows the outline of the thin film deposited on the substrate W when the height of the ring member 510 of the movable ring 500 is relatively higher than the height of the substrate W.

As shown in fig. 4 (C), when the height of the ring member 510 of the moving ring 500 is relatively higher than the height of the substrate W, heat released from the ring member 510 is well transferred to the edge of the substrate W, and the temperature of the edge region of the substrate W is higher than the center portion of the substrate W. In this case, the density of the thin film deposited on the substrate W increases with an increase in temperature, and the thickness of the thin film becomes thin. Therefore, the outline of the thin film deposited on the substrate W is thinner in the edge region than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thicker in the edge region of the substrate W than in the center region of the substrate W when the heights of the ring member 510 of the movable ring 500 and the substrate W are the same, the profile of the thin film deposited on the substrate W may be set to be higher than the substrate W so that the profile of the thin film deposited on the substrate W is maintained at a constant thickness as shown in fig. 4 (C).

In this way, when a thin film is deposited on the substrate W by the PECVD method, an RF power is applied to the gas supply portion 200, both the substrate support portion 300 and the moving ring 500 are grounded, and the moving ring 500 operates as a heater. In this case, the profile of the thin film deposited on the substrate W may be adjusted by adjusting the relative heights of the moving ring 500 and the substrate W as described above.

On the other hand, when a thin film is deposited on the substrate W by the PECVD method, an RF power may be applied to the moving ring 500.

For example, the first RF power supply part 400 may be used to apply RF power to the substrate support part 300 by the operation of the first switch part 410. In this case, the air supply part 200 may be grounded through the second matching part 440.

In this case, an RF power may be supplied to the mobile ring 500. That is, the moving ring 500 may be applied with RF power by the second RF power supply part 400 by the operation of the second switching part 610. When RF power is applied to the third electrode 530 of the moving ring 500, the plasma density over the substrate W may be adjusted.

Fig. 5 is a view showing a change in the profile of a thin film deposited on the substrate W according to a change in the height of the ring member 510 of the movable ring 500 in the deposition process in which the movable ring 500 is operated as an RF electrode by the PECVD method.

Referring to fig. 5, it can be assumed that (a) of fig. 5 is a contour of a thin film deposited on the substrate W when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same.

As shown in fig. 5 (a), when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, the plasma density of the edge region of the substrate W and the plasma density of the central portion may be maintained to be uniform. Therefore, it can be said that the overall plasma density above the substrate W is kept uniform, and the thickness of the thin film deposited on the substrate W is kept constant.

However, due to various factors such as the temperature inside the chamber 110, the plasma density, etc., even in the case where the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, when the profile of the thin film deposited on the substrate W is different from that of fig. 5 (a), adjustment by the moving ring 500 is required.

For example, fig. 5 (B) shows the outline of the thin film deposited on the substrate W when the height of the ring member 510 of the movable ring 500 is relatively higher than the height of the substrate W.

As shown in fig. 5 (B), when the height of the ring member 510 of the moving ring 500 is relatively higher than the height of the substrate W, the plasma density rises at the edge region of the substrate W, and the process gas is decomposed more. Therefore, the profile of the thin film deposited on the substrate W may be thicker in the edge region of the substrate W than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thinner at the edge region of the substrate W than at the center of the substrate W when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, the profile of the thin film deposited on the substrate W may be set to be higher than the substrate W so that the profile of the thin film deposited on the substrate W is maintained at a constant thickness as shown in fig. 5 (B).

On the other hand, fig. 5 (C) shows the outline of the thin film deposited on the substrate W when the height of the ring member 510 of the movable ring 500 is relatively lower than the height of the substrate W.

As shown in fig. 5 (C), when the height of the ring member 510 of the moving ring 500 is relatively lower than the height of the substrate W, the plasma density of the edge region of the substrate W is lower than the center portion of the substrate W, and the process gas is less decomposed. Therefore, the outline of the thin film deposited on the substrate W is smaller in the edge region of the substrate W than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thicker in the edge region of the substrate W than in the center region of the substrate W when the heights of the ring member 510 of the movable ring 500 and the substrate W are the same, the profile of the thin film deposited on the substrate W may be set to be lower than the substrate W so that the profile of the thin film deposited on the substrate W is maintained at a constant thickness as shown in fig. 5 (C).

In this way, when a thin film is deposited on the substrate W by the PECVD method, an RF power can be applied to the substrate support 300 and the moving ring 500, and the gas supply portion 200 is grounded. In this case, the plasma density may be adjusted by adjusting the relative heights of the moving ring 500 and the substrate W as described above, thereby adjusting the profile of the thin film deposited on the substrate W.

In addition, when a thin film is deposited on the substrate W by PECVD, unlike the above-described method, an RF power may be applied to the gas supply portion 200, and the substrate support portion 300 and the moving ring 500 may be grounded. In this case, the moving ring 500 may be lifted to adjust the relative heights of the moving ring 500 and the substrate W, thereby adjusting the plasma density.

On the other hand, a thin film may be deposited on the substrate W by a thermal CVD (chemical vapor deposition) method without using plasma. That is, when a thin film is deposited on the substrate W by a so-called Thermal chemical vapor deposition (Thermal CVD), the moving ring 500 may function to heat the substrate W.

For example, when the substrate W is heated by the substrate support 300, the edge region of the substrate W may be heated by driving the second heater 520 of the moving ring 500.

If the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, it is considered that the edge region and the center region of the substrate W are uniformly heated, and the thickness of the thin film deposited on the substrate W is kept constant.

However, due to various factors such as the temperature inside the chamber 110, the plasma density, etc., even in the case where the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, when the profile of the thin film deposited on the substrate W is different, adjustment using the moving ring 500 is required.

For example, when the height of the ring member 510 of the moving ring 500 is relatively higher than the height of the substrate W, the temperature rises at the edge region of the substrate W, and the process gas is decomposed more. Therefore, the outline of the thin film deposited on the substrate W is larger in the edge region of the substrate W than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thinner at the edge region of the substrate W than at the center of the substrate W in the case where the height of the ring member 510 of the moving ring 500 is the same as that of the substrate W, the profile of the thin film deposited on the substrate W may be maintained to have a constant thickness by setting the relative height of the moving ring 500 to be higher than that of the substrate W.

On the other hand, when the height of the ring member 510 of the moving ring 500 is relatively lower than the height of the substrate W, the temperature of the edge region of the substrate W is lower than the center portion of the substrate W, and the process gas is less decomposed. Therefore, the outline of the thin film deposited on the substrate W is smaller in the edge region of the substrate W than in the central portion of the substrate W.

Therefore, if the profile of the thin film deposited on the substrate W is thicker in the edge region of the substrate W than in the center region of the substrate W in the case where the height of the ring member 510 of the movable ring 500 is the same as that of the substrate W, the profile of the thin film deposited on the substrate W may be maintained to have a constant thickness by setting the relative height of the movable ring 500 to be lower than that of the substrate W.

In this way, when a thin film is deposited on the substrate W by the thermal CVD method, the profile of the thin film deposited on the substrate W can be adjusted by adjusting the relative heights of the moving ring 500 and the substrate W.

On the other hand, when the etching process is performed on the substrate W, the RF power may be applied from the first RF power supply unit 400 to the gas supply unit 200 by the operation of the first switch unit 410. In this case, the substrate supporting part 300 supporting the substrate W may be grounded through the second matching part 440.

On the other hand, the moving ring 500 may be supplied with RF power by the second RF power supply part 600 by the operation of the second switching part 610. In this case, the second heater 520 of the moving ring 500 may be driven to heat the substrate W to a preset temperature.

When the second heater 520 of the moving ring 500 is driven to heat the substrate W, the edge region of the substrate supporting part 300 is also heated, and the center and edge of the substrate supporting part 300 may be thermally equalized.

In addition, the RF impedance can be adjusted by adjusting the distance between the ring member 510 of the moving ring 500 and the substrate support 300.

That is, the height of the ring member 510 of the movable ring 500 is adjusted so that the distance between the ring member 510 and the substrate support 300 is closer to or farther from each other, and the RF impedance is adjusted, thereby enabling the density adjustment of the plasma.

In the case where the adjustment of the plasma density is possible, the adjustment of the etching profile of the thin film of the substrate W may be also possible.

For example, when the heights of the ring member 510 of the moving ring 500 and the substrate W are the same, the thin film of the substrate W may be substantially uniformly etched at the center and edges.

On the other hand, when the height of the ring member 510 of the moving ring 500 is relatively lower than the height of the substrate W, the plasma density of the edge of the substrate W is lower than that of the center portion, and the etching amount of the edge of the substrate W is smaller than that of the center portion of the substrate W.

In contrast, when the ring member 510 of the moving ring 500 is higher than the substrate W, the distance between the gas supply portion 200 and the ring member 510 is closer, the plasma density at the edge of the substrate W is higher than that at the center portion, and the amount of etching at the edge of the substrate W is greater than that at the center portion of the substrate W.

On the other hand, when the cleaning process is performed inside the chamber 110, the RF power may be applied to the gas supply part 200 by the first RF power supply part 400 through the operation of the first switch part 410. The substrate supporting part 300 supporting the substrate W may be grounded through the second matching part 440.

In this case, plasma is generated in the region between the gas supply portion 200 and the substrate support portion 300, and particles and the like in the chamber 110 are removed. However, particles and the like are also attached to a lower region of the substrate support 300, that is, a bottom surface of the substrate support 300 and a base region of the chamber 110 when the chamber 110 is observed. In this way, particles and the like adhering to the lower region of the substrate support 300 are not easily removed by the plasma generated between the gas supply portion 200 and the substrate support 300.

Accordingly, the present invention lowers the moving ring 500 such that the moving ring 500 is positioned at a height between the substrate support 300 and the bottom of the chamber 110 when the cleaning process is performed inside the chamber 110.

Fig. 6 is a side sectional view showing the height of the moving ring 500 in the cleaning process of the lower side of the chamber 110 in the substrate processing apparatus 1000 of the present invention.

Referring to fig. 6, the moving ring 500 may be supplied with RF power by the second RF power supply part 600 by the operation of the second switching part 610. In this case, the substrate supporting part 300, the gas supplying part 200, and the chamber 110 are grounded. Accordingly, plasma can be generated between the moving ring 500 acting as an RF electrode and the substrate support 300 acting as a ground electrode close to the moving ring 500 and below the chamber 110, and thus the chamber 110 can be effectively cleaned below. In addition, the second heater 520 of the moving ring 500 may be driven to heat the inside of the chamber 110 to a preset temperature to improve cleaning efficiency.

Therefore, particles and the like adhering to the inner wall of the chamber 110 above the substrate support 300 can be removed by plasma generated between the gas supply part 200 and the substrate support 300 and the upper wall of the chamber 110, and particles and the like adhering to the inner wall or the base of the chamber 110 below the substrate support 300 can be removed by plasma generated between the ring member 510 of the moving ring 500 and the lower wall of the chamber 110 and the substrate support 300.

On the other hand, although not shown, when cleaning the upper side of the chamber 110, the moving ring 500 may be lifted up above the substrate supporting part 300 to improve the cleaning efficiency.

Finally, the substrate processing apparatus 1000 according to the present invention can more effectively clean particles and the like in the chamber 110 by providing the moving ring 500.

On the other hand, fig. 7 is a partial perspective view showing a movable ring 1500 according to another embodiment of the present invention together with a substrate support portion 300, and fig. 8 is a perspective view of the movable ring 1500.

Referring to fig. 7 and 8, the moving ring 1500 of the present embodiment may include two or more divided moving rings 1510, 1530, 1550 disposed between the substrate support 300 and the inner wall of the chamber 110.

That is, the moving ring 1500 of the present embodiment may be divided into two or more divided moving rings 1510, 1530, 1550 instead of being constituted of one component.

At this time, the split moving rings 1510, 1530, 1550 may be disposed between the substrate support 300 and the inner wall of the chamber 110, and may be disposed to surround the edge of the substrate support 300. The two or more split movable rings 1510, 1530, 1550 may be independently liftable.

When the movable ring 1500 is constituted by a plurality of divided movable rings 1510, 1530, 1550, each of the divided movable rings 1510, 1530, 1550 may independently include at least one of a heater, an electrode, and a ground portion. That is, the split moving rings 1510, 1530, 1550 may operate the heater alone, be supplied with RF power, or be grounded.

On the other hand, the split movable rings 1510, 1530, 1550 may include support rods 1512, 1532, 1552 formed to extend downward.

The support rods 1512, 1532, 1552 may extend outward through the through holes of the chamber 110, and may be connected to driving parts (not shown), respectively. The split moving rings 1510, 1530, 1550 can be independently moved up and down by driving the driving part.

In this case, the respective ends of the split moving rings 1510, 1530, 1550 may be arranged to be spaced apart from each other by a fine pitch. For example, both end portions of the first split moving ring 1510 may be arranged to be slightly spaced apart from one side end portion of the second split moving ring 1530 and one side end portion of the third split moving ring 1550. This is because, if the split movable rings 1510, 1530, 1550 are disposed in a state where both ends of the first split movable ring 1510 are in contact with one side end of the second split movable ring 1530 and one side end of the third split movable ring 1550, particles or the like may be generated due to friction when the split movable rings 1510, 1530, 1550 are lifted up and down, respectively.

In addition, if disposed in a state where the respective ends of the split moving rings 1510, 1530, 1550 are in contact, when RF power is applied to only a portion of the split moving rings 1510, 1530, 1550, the adjacent split moving rings are also energized with RF power, and it may be difficult to adjust the profile of the plasma density.

Similarly, if disposed in a state where the respective ends of the split movable rings 1510, 1530, 1550 are in contact, when only a part of the heaters of the split movable rings 1510, 1530, 1550 are operated, heat is transferred to the adjacent split movable rings, and it may be difficult to adjust the temperature profile.

In this way, when the movable ring 1500 is composed of two or more divided movable rings 1510, 1530, 1550, the divided movable rings 1510, 1530, 1550 may all be raised or lowered together as in the above-described embodiments, and a vapor deposition process, an etching process, and a cleaning process may be performed.

On the other hand, the two or more split moving rings 1510, 1530, 1550 can be independently lifted and lowered, respectively, so that more precise temperature control or plasma density control can be realized inside the chamber 110.

For example, when the vapor deposition process is performed on the substrate W by the PECVD method, an RF power is applied to the gas supply portion 200, and the substrate support portion 300 and the moving ring 500 may be grounded. In addition, the substrate W may be heated by the second heater 520 of the moving ring 500.

In this case, the heights of the two or more split moving rings 1510, 1530, 1550 may be adjusted so as to be different from each other.

Fig. 9 is a view showing the outline of a thin film deposited on the substrate W when the heights of the two or more split moving rings 1510, 1530, 1550 are different from each other in the vapor deposition process in which the moving ring 500 is operated as a heater by the PECVD method as described above.

Referring to fig. 9, the first split moving ring 1510 may be arranged to be relatively higher than the height of the substrate W, and the second split moving ring 1530 may be arranged to be relatively lower than the height of the substrate W.

In this case, the first split moving ring 1510 is relatively higher than the substrate W in height, and the temperature of the edge region of the substrate W adjacent to the first split moving ring 1510 is higher than the temperature of the center portion of the substrate W.

In contrast, the second split moving ring 1530 is relatively lower than the height of the substrate W, and the temperature of the edge region of the substrate W adjacent to the second split moving ring 1530 is lower than the center portion of the substrate W.

Therefore, in the substrate W, the film thickness of the edge region is thicker than the center portion of the substrate W in the edge region (a region) adjacent to the second split moving ring 1530. In contrast, in the substrate W, the film thickness of the edge region is thinner than the center portion of the substrate W in the edge region (B region) adjacent to the first split moving ring 1510.

On the other hand, when the vapor deposition process is performed on the substrate W by the PECVD method, the gas supply portion 200 may be grounded, and an RF power may be applied to the substrate support portion 300 and the moving ring 500.

In this case, the RF impedance can be adjusted by adjusting the respective distances between the two or more split moving rings 1510, 1530, 1550 and the gas supply portion 200.

That is, by independently adjusting the two or more split movable rings 1510, 1530, 1550, the distance between each of the two or more split movable rings 1510, 1530, 1550 and the gas supply portion 200 can be made closer or farther apart. In this case, the impedance may be adjusted in each of the areas adjacent to the two or more split moving rings 1510, 1530, 1550 to adjust the plasma density.

On the other hand, when the vapor deposition process is performed as described above by providing the two or more split movable rings 1510, 1530, 1550, in addition to the method of lifting the split movable rings 1510, 1530, 1550 alone, an RF power may be applied to only a part of the split movable rings 1510, 1530, 1550, or only a heater of a part of the split movable rings 1510, 1530, 1550 may be driven, or only a part of the split movable rings 1510, 1530, 1550 may be grounded. In this case, an effect similar to that in the case where a part of the split moving rings 1510, 1530, 1550 is lifted or lowered alone can be obtained.

While the present invention has been described with reference to the preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the invention without departing from the spirit and scope of the invention as set forth in the appended claims. Accordingly, the implementation of the modification basically includes the constituent elements of the claims of the present invention, and is considered to be all included in the technical scope of the present invention.

Claims

1. A substrate processing apparatus, comprising:

a chamber providing an accommodation space for accommodating the substrate;

a gas supply part provided inside the chamber and supplying a process gas or a cleaning gas;

a substrate supporting portion provided inside the chamber and supporting the substrate; and

a moving ring disposed between the substrate supporting part and an inner wall of the chamber to be capable of being lifted up and down, and having at least one of a heater for heating the substrate, an electrode to which an RF power is supplied, and a ground part,

the moving ring is arranged to be spaced apart from the substrate support to surround an edge of the substrate support,

the moving ring includes two or more divided moving rings disposed between the substrate supporting portion and an inner wall of the chamber, the two or more moving rings being provided to be capable of being lifted by themselves,

A driving rod is formed on the central bottom surface of the substrate supporting part in a downward extending way, penetrates through the first through hole of the chamber and extends outwards to be connected with the driving part,

the split moving ring is provided with a support rod extending downward, the support rod penetrates through the second through hole of the chamber and extends outwards to be connected with the driving part respectively,

the moving ring is lowered so as to be positioned at a height between the substrate support and the bottom of the chamber while the cleaning process is performed on the inside of the chamber.

2. The substrate processing apparatus according to claim 1, wherein,

when the moving ring heats the substrate, the temperature profile of the substrate is adjusted by making the relative height of the moving ring to the substrate different, or

When RF power is applied to the moving ring, the relative heights of the moving ring to the substrate are varied to adjust the plasma density over the substrate.

3. The substrate processing apparatus according to claim 1, wherein,

the moving ring is divided into two or more regions along an edge of the substrate supporting part to heat the substrate, or the moving ring is divided into two or more regions along an edge of the substrate supporting part to apply the RF power.

4. The substrate processing apparatus according to claim 3, wherein,

when the moving ring is provided with the heater, the heater is composed of more than two divided heaters, and when the moving ring is provided with the electrode, the electrode is composed of more than two divided electrodes,

the split heater or the split electrode is arranged on the moving ring to surround an edge of the substrate supporting part.

5. The substrate processing apparatus according to claim 1, wherein,

the split moving rings each have a heater for heating the substrate or an electrode to which an RF power is supplied.

6. The substrate processing apparatus according to claim 1, wherein,

the substrate processing apparatus further includes a first RF power supply unit connected to the gas supply unit and the substrate support unit, and selectively supplying RF power to the gas supply unit or the substrate support unit.

7. The substrate processing apparatus according to claim 6, wherein,

the first RF power supply part is connected to the moving ring, and selectively supplies RF power to the moving ring when the gas supply part is grounded.

8. The substrate processing apparatus according to claim 1, wherein,

when the movable ring is provided with the electrode, the substrate processing apparatus further comprises a second RF power supply unit for supplying RF power to the movable ring.