CN111785793A - ZnMgO ultraviolet detector and preparation method thereof - Google Patents

ZnMgO ultraviolet detector and preparation method thereof Download PDF

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Publication number
CN111785793A
CN111785793A CN202010800909.0A CN202010800909A CN111785793A CN 111785793 A CN111785793 A CN 111785793A CN 202010800909 A CN202010800909 A CN 202010800909A CN 111785793 A CN111785793 A CN 111785793A
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znmgo
ultraviolet detector
interdigital electrode
film
oxygen
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刘可为
侯其超
申德振
陈星�
张振中
李炳辉
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
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    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a ZnMgO ultraviolet detector and a preparation method thereof, wherein the method comprises the following steps: s1, growing a ZnMgO film on the surface of the substrate by using an organic zinc compound as a zinc source, an organic magnesium compound as a magnesium source and high-purity oxygen as an oxygen source and by using a metal organic compound chemical vapor deposition method; s2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure. Compared with the prior art, the method has the advantages that the prepared ZnMgO film has the characteristics of high crystalline quality, no phase separation, steep absorption cut-off edge and the like by increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygen defect, and the ZnMgO film 2 with the mixed-phase structure can simultaneously meet high responsivity and low dark current, so that the ZnMgO ultraviolet photoelectric detector has lower dark current and higher photoresponse speed.

Description

ZnMgO ultraviolet detector and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor ultraviolet detection, in particular to a high-performance miscible ZnMgO ultraviolet detector and a preparation method thereof.
Background
The ultraviolet detection technology has wide application prospect in military and civil fields such as missile tail flame detection, flame sensing, air and water purification, air-to-air communication and the like. Ultraviolet radiation having a wavelength of less than 280nm is known as solar blind ultraviolet because it is blocked by the earth's aerial ozone layer and hardly propagates to the earth's surface. The solar blind ultraviolet detector working in the solar blind waveband is not interfered by solar radiation, has higher sensitivity, and can be applied to aspects of missile early warning and the like. In recent years, wide bandgap semiconductor ultraviolet detectors are considered to be third generation ultraviolet detectors that can replace vacuum photomultipliers and Si photomultipliers due to their advantages of small size, light weight, no need for filters during operation, no need for refrigeration, etc.
The band gap of the ZnMgO thin film material is wider in adjustable range (3.37-7.8 eV), and the ZnMgO thin film material can be applied to ultraviolet photoelectric devices within the range of 160-370 nm in principle. Moreover, the ZnMgO film material has a series of advantages of strong radiation resistance, rich raw material resources, low epitaxial growth temperature and the like, is deeply researched by related researchers and is expected to be. The ZnMgO thin film material has two stable structures, namely a hexagonal wurtzite structure and a cubic sphalerite structure, and the ZnMgO thin film materials with the two structures have advantages and disadvantages respectively, for example, the ZnMgO responsivity of a hexagonal phase is high, but the dark current is also large; the cubic phase ZnMgO has low dark current but low responsivity. Researches find that the mixed-phase (hexagonal phase and cubic phase mixed) ZnMgO film material can simultaneously meet high responsivity and low dark current, thereby realizing the development of corresponding high-performance ultraviolet photoelectric detectors.
At present, the ZnMgO film is generally prepared by adopting pulsed laser deposition and radio frequency magnetron sputtering. The ZnMgO thin film prepared by the two methods has low crystal quality and more defect states, so that the prepared ultraviolet detector has higher dark current, lower light responsivity and poorer device performance.
Disclosure of Invention
The invention provides a ZnMgO ultraviolet detector and a preparation method thereof, aiming at solving the problems that the quality of ZnMgO thin film crystals prepared by pulse laser deposition and radio frequency magnetron sputtering is low, the defect states are more, the dark current of the ultraviolet detector is larger, and the light responsivity is lower.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the invention provides a ZnMgO ultraviolet detector which comprises a substrate, a ZnMgO film and an interdigital electrode which are sequentially stacked from bottom to top.
Preferably, the ZnMgO film has a mixed phase structure of hexagonal phase and cubic phase.
Preferably, the absorption cut-off edge of the ZnMgO film is 260-300 nm, and the photoresponse cut-off edge of the ZnMgO ultraviolet detector is 320 nm.
The invention also provides a preparation method of the ZnMgO ultraviolet detector, which comprises the following steps:
s1, growing a ZnMgO film on the surface of the substrate by using an organic zinc compound as a zinc source, an organic magnesium compound as a magnesium source and high-purity oxygen as an oxygen source and by using a metal organic compound chemical vapor deposition method;
s2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode;
and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
Preferably, the flow rate of the high-purity oxygen is 500-800 sccm.
Preferably, the organozinc compound is dimethyl zinc or triethyl zinc, and the organomagnesium compound is dimethyl cyclopentadienyl magnesium or diethyl cyclopentadienyl magnesium.
Preferably, the organozinc compound takes high-purity nitrogen as a carrier gas, and the flow rate of the carrier gas is 10-40 sccm; the organic magnesium compound uses high-purity nitrogen as carrier gas, and the flow rate of the carrier gas is 5-20 sccm.
Preferably, in step S2, the sputtering current is 5-8 mA.
Preferably, in step S2, the interdigital electrode mask is removed by using ultrasonic waves, and the ultrasonic time is 3-5 min.
Preferably, an annealing step is further included after step S1, specifically as follows:
and (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, raising the furnace temperature of the annealing furnace to 550-700 ℃ at a temperature rise rate of 0.2-0.4 ℃/s with an oxygen flow of 8-12 sccm, and taking out the ZnMgO film from the annealing furnace after 30-60 min.
The invention can obtain the following technical effects:
the ZnMgO film is prepared by using a metal organic compound chemical vapor deposition method, and has the characteristics of high crystalline quality, no phase separation, steep absorption cut-off edge and the like by increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygen defect.
Drawings
FIG. 1 is a schematic structural diagram of a ZnMgO ultraviolet detector provided by the present invention;
FIG. 2 is a schematic flow chart of a preparation method of the ZnMgO ultraviolet detector provided by the invention;
FIG. 3 is a schematic XRD spectrum of the ZnMgO thin film of example 1 of the present invention;
FIG. 4 is a UV-VIS absorption spectrum of the ZnMgO thin film of example 1 of the present invention;
FIG. 5 is an X-ray energy spectrum analysis spectrum of the ZnMgO thin film of example 1 of the present invention;
FIG. 6 is a graph showing the current-voltage characteristics of the ZnMgO ultraviolet detector of example 1 of the present invention;
FIG. 7 is a graph showing the photoresponse characteristics of the ZnMgO ultraviolet detector of example 1 of the present invention;
FIG. 8 is a schematic XRD spectrum of the ZnMgO thin film of example 2 of the present invention;
FIG. 9 is a UV-VIS absorption spectrum of the ZnMgO thin film of example 2 of the present invention;
FIG. 10 is an X-ray energy spectrum analysis spectrum of the ZnMgO thin film of example 2 of the present invention;
FIG. 11 is a graph showing the current-voltage characteristics of the ZnMgO ultraviolet detector of example 2 of the present invention;
FIG. 12 is a graph showing the photoresponse characteristics of the ZnMgO ultraviolet detector of example 2 of the present invention;
FIG. 13 is a schematic XRD spectrum of ZnMgO thin film of example 3 of the present invention;
FIG. 14 is a UV-VIS absorption spectrum of the ZnMgO thin film of example 3 of the present invention;
FIG. 15 is an X-ray energy spectrum analysis spectrum of the ZnMgO thin film of example 3 of the present invention;
FIG. 16 is a graph showing the current-voltage characteristics of the ZnMgO ultraviolet detector of example 3 of the present invention;
fig. 17 is a graph showing the photoresponse characteristics of the ZnMgO ultraviolet detector of embodiment 3 of the invention.
Wherein the reference numerals include: the device comprises a substrate 1, a ZnMgO film 2, interdigital electrodes 3 and In particles 4.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The scheme provided by the invention is described in detail in the following with reference to the attached drawings.
FIG. 1 shows the structure of the ZnMgO ultraviolet detector provided by the invention.
As shown in fig. 1, the ZnMgO ultraviolet detector provided by the present invention includes: the substrate 1, the ZnMgO thin film 2 and the interdigital electrode 3 are sequentially stacked from bottom to top, and In particles 4 are pressed on the interdigital electrode 3.
The substrate 1 is a substrate known to those skilled in the art, and is not particularly limited, and a sapphire substrate is preferable in the present invention.
The ZnMgO film 2 is of a mixed phase structure of a hexagonal phase and a cubic phase, and the ZnMgO film 2 of the mixed phase structure can simultaneously meet high responsivity and low dark current, so that the ZnMgO ultraviolet photoelectric detector has lower dark current and higher photoresponse speed.
The light absorption cut-off edge of the ZnMgO film 2 is 260-300 nm, and the absorption cut-off edge is very steep.
The thickness of the ZnMgO film 2 is 100-600 nm.
The thickness of the interdigital electrode 3 is 20-40 nm.
The photoresponse cut-off edge of the ZnMgO ultraviolet detector is 320 nm.
The preparation method of the ZnMgO film 2 comprises the following steps: by utilizing Metal Organic Chemical Vapor Deposition (MOCVD) equipment, an organic zinc compound is used as a zinc source, an organic magnesium compound is used as a magnesium source, the substrate is heated to a certain temperature under the atmosphere of excessive oxygen, and the ZnMgO film with a hexagonal phase and cubic phase mixed structure grows on the substrate.
The preparation method of the interdigital electrode 3 comprises the following steps: and forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, sputtering metal on the interdigital electrode mask by using a small film plating machine, and removing the interdigital electrode mask by ultrasonic and other modes to form the interdigital electrode.
The above details explain the structure of the ZnMgO ultraviolet detector provided by the present invention. Corresponding to the ZnMgO ultraviolet detector, the invention also provides a preparation method of the ZnMgO ultraviolet detector.
Fig. 2 shows a flow of a method of manufacturing a ZnMgO ultraviolet detector as provided by the present invention.
As shown in fig. 2, the preparation method of the ZnMgO ultraviolet detector provided by the present invention comprises the following steps:
s1, growing a ZnMgO film on the surface of the substrate by using an organic zinc compound as a zinc source, an organic magnesium compound as a magnesium source and high-purity oxygen as an oxygen source and by using a metal organic compound chemical vapor deposition method.
Moving the substrate into a growth cavity of MOCVD equipment, adjusting the initial temperature of the growth cavity to 500-800 ℃, and adjusting the vacuum degree of the growth cavity to 1x103Pa～4x103Pa, the flow rate of the introduced high-purity oxygen is 500-800 sccm, and the growth time is 1-1.5 h.
According to the invention, through the modes of increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygen defects, the prepared ZnMgO film has the characteristics of high crystallization quality, no phase splitting, steep absorption cut-off edge and the like, and further the ZnMgO ultraviolet detector has lower dark current and higher photoresponse speed.
The organic zinc compound takes high-purity nitrogen as carrier gas, and the flow rate of the carrier gas is 10-40 sccm; the organic magnesium compound uses high-purity nitrogen as carrier gas, and the flow rate of the carrier gas is 5-20 sccm.
The organic zinc compound is dimethyl zinc or triethyl zinc, and the organic magnesium compound is dimethyl cyclopentadienyl magnesium or diethyl cyclopentadienyl magnesium.
Before step S1, the following steps may be further included:
and S0, cleaning the substrate.
The substrate was sequentially cleaned with trichloroethylene, acetone and ethanol and then blown dry with dry nitrogen.
S0 is an optional step, which may not be performed if the substrate is clean.
After step S1, the ZnMgO film may be annealed, which specifically includes the following steps:
and (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, raising the furnace temperature of the annealing furnace to 550-700 ℃ at a temperature rise rate of 0.2-0.4 ℃/s with an oxygen flow of 8-12 sccm, and taking out the ZnMgO film from the annealing furnace after 30-60 min.
The performance of the ZnMgO film can be improved by carrying out oxygen annealing treatment on the ZnMgO film, so that the performance of the ZnMgO ultraviolet detector is improved, and the ZnMgO ultraviolet detector has lower dark current and higher photoresponse speed.
And S2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form the interdigital electrode.
An interdigital electrode mask is formed on the ZnMgO film by negative photoresist photoetching, metal (such as gold and silver) is sputtered on the interdigital electrode mask by a small film plating machine, and then the interdigital electrode mask is removed to form the interdigital electrode.
The sputtering current of the small-sized film plating machine is 5-8 mA.
The mode of removing the interdigital electrode mask can be ultrasonic wave and the like, the ultrasonic time is 3-5 min, and the thickness of the formed interdigital electrode is 20-40 nm.
And S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
The preparation method and the performance of the ZnMgO ultraviolet detector provided by the invention are explained in detail by using a plurality of specific examples.
Example 1
And putting the cleaned sapphire substrate into a growth chamber of MOCVD equipment, and adjusting the growth temperature to 800 ℃ and the pressure to 4000 Pa. And (2) using dimethyl zinc as a zinc source, using dimethyl cyclopentadienyl magnesium as a magnesium source, enabling the carrier gas flow rate of the zinc source to be 10sccm, the carrier gas flow rate of the magnesium source to be 5sccm, enabling the flow rate of high-purity oxygen to be 500sccm, far larger than the flow rates of the zinc source and the magnesium source, growing for 1h, closing the organic source and the oxygen, and reducing the temperature of the substrate to room temperature at 0.6 ℃/s to obtain the ZnMgO film.
And (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, raising the furnace temperature of the annealing furnace to 700 ℃ at the heating rate of 0.4 ℃/s with the oxygen flow of 12sccm, keeping the temperature constant for 30min, and then taking out the ZnMgO film from the annealing furnace.
And forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO film by using negative photoresist photoetching. And putting the ZnMgO thin film with the photoetched interdigital electrode mask into a small coating machine, sputtering metal gold under the condition that the pressure is 8Pa and the current is 6mA, removing the interdigital electrode mask through ultrasound to obtain an interdigital electrode, and pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
The surface morphology of the ZnMgO film obtained in example 1 is shown in FIG. 3 by characterization of XRD, and it can be seen from FIG. 3 that both hexagonal phase ZnMgO and cubic phase ZnMgO have diffraction peaks, indicating that the ZnMgO film has a mixed phase structure.
The ZnMgO film obtained in example 1 was subjected to uv-vis absorption spectrum test, and the spectrum thereof was as shown in fig. 4, and it can be seen from fig. 4 that the prepared ZnMgO film had double absorption edges, further confirming that the film had a miscible structure.
The ZnMgO film obtained in example 1 was subjected to EDS test, and the spectrum thereof is shown in fig. 5, and it can be seen from fig. 5 that the zinc element and the magnesium element are simultaneously present in the ZnMgO film, and the ratio of the zinc element to the magnesium element is about 7: 3.
the mixed-phase ZnMgO ultraviolet detector obtained in example 1 was subjected to a current-voltage characteristic test in a dark state, and the spectrum thereof was obtained as shown in fig. 6. As can be seen from FIG. 6, the dark current of the prepared mixed-phase ZnMgO ultraviolet detector is 8pA at 10V, which shows that the prepared ZnMgO ultraviolet detector has low leakage current.
The mixed phase ZnMgO ultraviolet detector obtained in example 1 was subjected to a photoresponse characteristic test, and the spectrum thereof was obtained as shown in fig. 7. As can be seen from FIG. 7, the prepared miscible ZnMgO ultraviolet detector has the peak response of 286nm and 10V bias, the responsivity is as high as 319.5A/W, and the response cut-off edge is 320nm, which shows that the device has higher ultraviolet detection performance.
Example 2
And putting the cleaned sapphire substrate into a growth chamber of MOCVD equipment, and adjusting the growth temperature to 500 ℃ and the pressure to 3000 Pa. Triethyl zinc is used as a zinc source, dimethyl cyclopentadienyl magnesium is used as a magnesium source, the flow rate of carrier gas of the zinc source is 40sccm, the flow rate of carrier gas of the magnesium source is 20sccm, the flow rate of high-purity oxygen is 500sccm and is far greater than that of the zinc source and the magnesium source, the growth is carried out for 1.2h, the organic source and the oxygen are closed, the temperature of the substrate is reduced to the room temperature at the speed of 0.4 ℃/s, and the ZnMgO film is obtained.
And (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, raising the furnace temperature of the annealing furnace to 550 ℃ at the heating rate of 0.2 ℃/s with the oxygen flow of 12sccm, keeping the temperature constant for 60min, and then taking out the ZnMgO film from the annealing furnace.
And forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO film by using negative photoresist photoetching. And putting the ZnMgO thin film with the photoetched interdigital electrode mask into a small coating machine, sputtering metal gold under the condition that the pressure is 8Pa and the current is 5mA, removing the interdigital electrode mask through ultrasound to obtain an interdigital electrode, and pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
The surface morphology of the ZnMgO film obtained in the example 2 is shown in FIG. 8 by characterizing the film by XRD, and the diffraction peaks of the hexagonal ZnMgO and the cubic ZnMgO can be seen from FIG. 8, which shows that the film has a miscible structure.
The spectrum of the ZnMgO film obtained in example 2 is shown in fig. 9 by uv-vis absorption spectrum test, and it can be seen from fig. 9 that the prepared ZnMgO film has double absorption edges, further confirming that the film has a miscible structure.
The ZnMgO film obtained in example 2 was subjected to EDS test, and the spectrum thereof is shown in fig. 10, and it can be seen from fig. 10 that zinc element and magnesium element are simultaneously present in the ZnMgO film prepared, and the ratio of the zinc element to the magnesium element is about 9: 1.
The mixed-phase ZnMgO ultraviolet detector obtained in example 2 was subjected to a current-voltage characteristic test in a dark state, and the spectrum thereof was obtained as shown in fig. 11. As can be seen from FIG. 11, the dark current of the prepared mixed-phase ZnMgO ultraviolet detector at 10V is 280nA, which shows that the prepared ZnMgO ultraviolet detector has low leakage current.
The mixed phase ZnMgO ultraviolet detector obtained in example 2 was subjected to a photoresponse characteristic test, and the spectrum thereof was obtained as shown in fig. 12. As can be seen from FIG. 12, the peak response of the prepared miscible ZnMgO ultraviolet detector is 250nm, the responsivity under bias is 18A/W, and the response cut-off edge is 270nm, which shows that the device has higher ultraviolet detection performance.
Example 3
And putting the cleaned sapphire substrate into a growth chamber of MOCVD equipment, and adjusting the growth temperature to 700 ℃ and the pressure to 1000 Pa. Triethyl zinc is used as a zinc source, dimethyl cyclopentadienyl magnesium is used as a magnesium source, the flow rate of carrier gas of the zinc source is 30sccm, the flow rate of carrier gas of the magnesium source is 10sccm, the flow rate of high-purity oxygen is 650sccm, which is far greater than the flow rates of the zinc source and the magnesium source, the growth is carried out for 1.5h, the organic source and the oxygen are closed, and the temperature of the substrate is reduced to the room temperature at the rate of 0.5 ℃/s, so that the ZnMgO film is obtained.
And (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, raising the temperature of the annealing furnace to 600 ℃ at the heating rate of 0.3 ℃/s with the oxygen flow of 10sccm, keeping the temperature constant for 40min, and taking out the ZnMgO film from the annealing furnace.
And forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO film by using negative photoresist photoetching. And putting the ZnMgO thin film with the photoetched interdigital electrode mask into a small coating machine, sputtering metal gold under the condition that the pressure is 6Pa and the current is 4mA, removing the interdigital electrode mask through ultrasound to obtain an interdigital electrode, and pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
The surface morphology of the ZnMgO film obtained in example 3 is shown in FIG. 13 by characterization of XRD, and it can be seen from FIG. 13 that both hexagonal phase ZnMgO and cubic phase ZnMgO have diffraction peaks, indicating that the film has a miscible structure.
The ZnMgO film obtained in example 3 was subjected to uv-vis absorption spectrum test, and the spectrum thereof was as shown in fig. 14, and it can be seen from fig. 14 that the prepared ZnMgO film had double absorption edges, further confirming that the film had a miscible structure.
The ZnMgO film obtained in example 3 was subjected to EDS test, and the spectrum thereof is shown in fig. 15, and it can be seen from fig. 15 that the zinc element and the magnesium element are simultaneously present in the ZnMgO film, and the ratio of the zinc element to the magnesium element is about 1: 1.
The mixed-phase ZnMgO ultraviolet detector obtained in example 3 was subjected to a current-voltage characteristic test in a dark state, and the spectrum thereof was obtained as shown in fig. 16. As can be seen from fig. 16, the dark current of the prepared mixed-phase ZnMgO ultraviolet detector at 10V is 120nA, indicating that the prepared ZnMgO ultraviolet detector has low leakage current.
The mixed phase ZnMgO ultraviolet detector obtained in example 3 was subjected to a photoresponse characteristic test, and the spectrum thereof was obtained as shown in fig. 17. As can be seen from FIG. 17, the peak response of the prepared mixed-phase ZnMgO ultraviolet detector is 250nm, the responsivity under bias is as high as 400A/W, and the response cut-off edge is 270nm, which shows that the device has higher ultraviolet detection performance.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. A ZnMgO ultraviolet detector is characterized by comprising a substrate, a ZnMgO film and an interdigital electrode which are sequentially stacked from bottom to top.
2. The ZnMgO ultraviolet detector of claim 1, wherein the ZnMgO film is a hexagonal phase and cubic phase mixed structure.
3. The ZnMgO ultraviolet detector of claim 2, wherein the absorption cutoff edge of the ZnMgO thin film is 260 to 300nm, and the photoresponse cutoff edge of the ZnMgO ultraviolet detector is 320 nm.
4. A method for preparing the ZnMgO ultraviolet detector according to any one of claims 1 to 3, comprising the steps of:
s1, growing a ZnMgO film on the surface of the substrate by using an organic zinc compound as a zinc source, an organic magnesium compound as a magnesium source and high-purity oxygen as an oxygen source and by using a metal organic compound chemical vapor deposition method;
s2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode;
and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure.
5. The method for preparing the ZnMgO ultraviolet detector of claim 4, wherein the flow rate of the high purity oxygen is 500 to 800 sccm.
6. The method of claim 4, wherein the organic zinc compound is dimethyl zinc or triethyl zinc, and the organic magnesium compound is dimethyl cyclopentadienyl magnesium or diethyl cyclopentadienyl magnesium.
7. The preparation method of the ZnMgO ultraviolet detector as set forth in claim 4, wherein the organozinc compound takes high-purity nitrogen as a carrier gas, and the flow rate of the carrier gas is 10-40 sccm; the organic magnesium compound takes high-purity nitrogen as a carrier gas, and the flow rate of the carrier gas is 5-20 sccm.
8. The method for preparing the ZnMgO ultraviolet detector of claim 4, wherein in the step S2, the sputtering current is 5 to 8 mA.
9. The preparation method of the ZnMgO ultraviolet detector of claim 4, wherein in the step S2, the interdigital electrode mask is removed by ultrasonic waves for 3-5 min.
10. The method for preparing the ZnMgO ultraviolet detector of claim 4, further comprising an annealing step after the step S1, specifically as follows:
and (3) transferring the ZnMgO film into an annealing furnace, using an oxygen atmosphere, increasing the furnace temperature of the annealing furnace to 550-700 ℃ at a heating rate of 0.2-0.4 ℃/s with an oxygen flow of 8-12 sccm, and taking out the ZnMgO film from the annealing furnace after 30-60 min.
CN202010800909.0A 2020-08-11 2020-08-11 ZnMgO ultraviolet detector and preparation method thereof Pending CN111785793A (en)

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Publication number Priority date Publication date Assignee Title
CN113088907A (en) * 2021-03-26 2021-07-09 哈尔滨工业大学 Preparation method of MgGaZnO film with deep ultraviolet detection function
CN115241325A (en) * 2022-07-15 2022-10-25 集美大学 Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof

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CN1564314A (en) * 2004-04-20 2005-01-12 中国科学院物理研究所 Method of preparing high quality zinc oxide based monocrystal thin film
CN106927688A (en) * 2017-03-20 2017-07-07 武汉理工大学 A kind of halogen doping ZnMgO films and preparation method thereof
CN107579127A (en) * 2017-09-01 2018-01-12 中国科学院长春光学精密机械与物理研究所 A kind of ultraviolet detector and preparation method thereof
CN110970529A (en) * 2019-12-06 2020-04-07 中国科学院长春光学精密机械与物理研究所 Preparation method of high-performance mixed-phase ZnMgO film and ZnMgO film

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CN1564314A (en) * 2004-04-20 2005-01-12 中国科学院物理研究所 Method of preparing high quality zinc oxide based monocrystal thin film
CN106927688A (en) * 2017-03-20 2017-07-07 武汉理工大学 A kind of halogen doping ZnMgO films and preparation method thereof
CN107579127A (en) * 2017-09-01 2018-01-12 中国科学院长春光学精密机械与物理研究所 A kind of ultraviolet detector and preparation method thereof
CN110970529A (en) * 2019-12-06 2020-04-07 中国科学院长春光学精密机械与物理研究所 Preparation method of high-performance mixed-phase ZnMgO film and ZnMgO film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088907A (en) * 2021-03-26 2021-07-09 哈尔滨工业大学 Preparation method of MgGaZnO film with deep ultraviolet detection function
CN115241325A (en) * 2022-07-15 2022-10-25 集美大学 Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof

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