CN111244202A - ZnMgO ultraviolet detector and preparation method thereof - Google Patents
ZnMgO ultraviolet detector and preparation method thereof Download PDFInfo
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- CN111244202A CN111244202A CN202010196508.9A CN202010196508A CN111244202A CN 111244202 A CN111244202 A CN 111244202A CN 202010196508 A CN202010196508 A CN 202010196508A CN 111244202 A CN111244202 A CN 111244202A
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- 229910003363 ZnMgO Inorganic materials 0.000 title claims abstract description 216
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 229920000642 polymer Polymers 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 77
- 239000011777 magnesium Substances 0.000 claims description 29
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 27
- 229910052749 magnesium Inorganic materials 0.000 claims description 27
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 26
- 239000011701 zinc Substances 0.000 claims description 26
- 229910052725 zinc Inorganic materials 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 14
- 230000031700 light absorption Effects 0.000 claims description 13
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 8
- 238000013329 compounding Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920002939 poly(N,N-dimethylacrylamides) Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 125000002734 organomagnesium group Chemical group 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 230000004298 light response Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 20
- 230000005855 radiation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000000825 ultraviolet detection Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 208000002177 Cataract Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000000453 Skin Neoplasms Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 210000000987 immune system Anatomy 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 201000000849 skin cancer Diseases 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a ZnMgO ultraviolet detector, which comprises a substrate; a ZnMgO thin film layer compounded on the substrate; the interdigital electrode layer is compounded on the ZnMgO thin film layer; and the polymer layer is compounded on the surface of the interdigital electrode layer. The ZnMgO ultraviolet detector with a specific structure provided by the invention fully exerts the advantages of the ZnMgO thin film layer through the matching and the sequence of the layers, so that the ZnMgO ultraviolet detector prepared by the invention has lower dark current and good device stability. The preparation method provided by the invention has the advantages of simple steps, mild conditions, good repeatability and controllable process, and is beneficial to large-scale popularization and application.
Description
Technical Field
The invention belongs to the technical field of semiconductor ultraviolet detection, relates to a ZnMgO ultraviolet detector and a preparation method thereof, and particularly relates to a ZnMgO thin-film ultraviolet detector with a single hexagonal-phase crystal structure and a steep absorption cut-off edge and a preparation method thereof.
Background
Solar radiation is one of the energy sources for maintaining human daily activities, and although ultraviolet light accounts for only 7% of the solar spectrum, it plays a very important role in human life. In recent years, the destruction of the ozone layer in the atmosphere is increased, so that the ultraviolet radiation on the earth surface is increased gradually, the excessive ultraviolet radiation can cause skin cancer, cataract and the reduction of the functions of the immune system, and the crop yield can be reduced, thereby generating a series of environmental problems. Therefore, detection techniques regarding ultraviolet radiation have attracted a wide range of attention. And the ultraviolet detection technology has wide application prospect in military and civil fields such as missile tail flame detection, flame sensing, air and water purification, air-to-air communication and the like.
In recent years, along with the wide application of ultraviolet radiation in the fields of national defense, scientific research and civil use, the semiconductor ultraviolet detection technology is rapidly developed, and wide-gap semiconductor materials represented by group III nitrides and silicon carbide are third-generation semiconductor materials which are intensively researched and developed at home and abroad, have excellent material properties and are ideal materials for preparing ultraviolet detectors. Compared with the traditional silicon-based ultraviolet detector and a vacuum photomultiplier, the wide-bandgap semiconductor ultraviolet detector has the following advantages: the quantum efficiency is high; band edge cut-off, no response to visible light; can work in severe environments such as high temperature, strong radiation and the like. Meanwhile, the vacuum photomultiplier has inherent disadvantages of large weight, high working voltage, short service life and the like, so that the application of the vacuum photomultiplier in the aspects of ultraviolet detection and imaging systems is limited. Therefore, the wide-bandgap semiconductor ultraviolet detector is considered to be a third generation ultraviolet detector capable of replacing a vacuum photomultiplier and a Si photomultiplier due to its advantages of small volume, light weight, no need of a filter during operation, no need of refrigeration, and the like.
In wide-bandgap semiconductor materials, ZnMgO is an alloy material of ZnO and MgO, and is considered as an ideal material for preparing a new-generation visible-blind and solar-blind ultraviolet detector due to the advantages of large adjustable range of band gap, high drift rate of saturated carriers, strong radiation resistance, low working voltage, various preparation methods, rich source materials and the like. However, when the Mg component in the ZnMgO material is low, although the crystal structure is close to a single hexagonal phase, and the optical absorption cut-off edge is close to the near ultraviolet band, the dark current of the device prepared from the material is high, and the device is not stable when exposed to air, and the performance is poor after being placed for a long time, which becomes an important benefit for the application of the ultraviolet detector.
Therefore, how to find a suitable ultraviolet detector to overcome the above-mentioned defects of the existing ultraviolet detection device has become one of the focuses of great concern of many prospective researchers in the industry.
Disclosure of Invention
In view of the above, the technical problem to be solved by the present invention is to provide a ZnMgO ultraviolet detector and a method for manufacturing the same, and in particular, to a ZnMgO thin film ultraviolet detector having a single hexagonal phase crystal structure with a steep absorption cut-off edge. The ZnMgO ultraviolet detector prepared by the invention has lower dark current and good device stability.
The invention provides a ZnMgO ultraviolet detector, which comprises a substrate;
a ZnMgO thin film layer compounded on the substrate;
the interdigital electrode layer is compounded on the ZnMgO thin film layer;
and the polymer layer is compounded on the surface of the interdigital electrode layer.
Preferably, the photoresponse cut-off edge of the ZnMgO ultraviolet detector is 380-400 nm;
the substrate comprises one or more of a sapphire substrate, a quartz substrate and a magnesium oxide substrate;
the thickness of the substrate is 100-600 nm;
the interdigital electrode layer is made of one or more of gold, silver, platinum and aluminum;
the thickness of the interdigital electrode layer is 20-40 nm.
Preferably, the ZnMgO ultraviolet detector further includes In particles disposed on a non-interdigital electrode surface of the interdigital electrode layer;
the diameter of the In particles is 1-3 mm;
the height of the In particles is 0.1-1 mm;
the ZnMgO ultraviolet detector has an MSM structure.
Preferably, the polymer comprises PMMA and/or PDMA;
the thickness of the polymer layer is 0.1-10 mu m;
the ZnMgO film has a single hexagonal phase crystal structure;
in the ZnMgO film, the mass ratio of ZnO to MgO is (7-11): 1;
and the absorption cut-off edge of the ZnMgO ranges from 350 nm to 370 nm.
Preferably, the absorption cut-off edge is a light absorption cut-off edge;
the light absorption cut-off edge comprises a light absorption cut-off edge for ultraviolet light and visible light;
the ZnMgO has a steep absorption cut-off edge;
the transmittance of ZnMgO is reduced by 70-90% in the range of 5nm wave band at the position of absorption cut-off edge.
Preferably, the grain size of the ZnMgO is 0.3-1 nm;
the length of the ZnMgO film is 1-5 cm;
the width of the ZnMgO film is 1-5 cm;
the thickness of the ZnMgO film is 100-600 nm;
the root mean square roughness of the ZnMgO film is 0.1-2 nm.
The invention provides a preparation method of a ZnMgO ultraviolet detector, which comprises the following steps:
1) carrying out chemical vapor deposition on an organic zinc source and an organic magnesium source on a heating substrate under the condition of excessive oxygen to obtain a substrate on which a ZnMgO film grows;
2) firstly forming an interdigital electrode mask on the ZnMgO film obtained in the step, then forming a metal layer, and then removing the mask to form an interdigital electrode layer;
3) and compounding a polymer layer on the interdigital electrode of the interdigital electrode layer obtained In the step, and pressing In particles at the non-interdigital electrode to obtain the ZnMgO ultraviolet detector.
Preferably, the organozinc source comprises diethyl zinc and/or dimethyl zinc;
the organomagnesium source comprises dimethyldimagnesium and/or dimagnesium;
the conveying carrier gas of the organic zinc source comprises high-purity nitrogen and/or high-purity nitric oxide;
the flow rate of the conveying carrier gas of the organic zinc source is 10-30 sccm;
the delivery carrier gas of the organic magnesium source comprises high-purity nitrogen and/or high-purity nitric oxide;
the flow rate of the carrier gas for conveying the organic magnesium source is 1-5 sccm.
Preferably, the mass ratio of the organic zinc source to the organic magnesium source is (5-20): 1;
the flow rate of the oxygen is 100-900 sccm;
the partial pressure of oxygen in the chemical vapor deposition process is 1x102～1x103Pa；
The temperature of the heating substrate is 400-800 ℃;
the chemical vapor deposition time is 1-3 h;
the temperature of the chemical vapor deposition is 400-800 ℃.
Preferably, the manner of forming the interdigital electrode mask comprises negative photoresist lithography;
the metal layer forming mode comprises one or more of magnetron sputtering, thermal evaporation, small ion sputtering and ALD;
the sputtering current of the small ion sputtering is 5-8 mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3-5 min;
the means of compounding include spin coating and/or evaporation.
The invention provides a ZnMgO ultraviolet detector, which comprises a substrate; a ZnMgO thin film layer compounded on the substrate; the interdigital electrode layer is compounded on the ZnMgO thin film layer; and the polymer layer is compounded on the surface of the interdigital electrode layer. The invention aims at the defects that the prior ultraviolet detection device has higher dark state current, is not stable when exposed in the air and has poor performance after being placed for a long time. The invention creatively obtains the ZnMgO ultraviolet detector with a specific structure, and fully exerts the advantages of the ZnMgO thin film layer through the matching and the sequence of the layers, so that the ZnMgO ultraviolet detector prepared by the invention has lower dark current and good device stability. The ultraviolet detector provided by the invention fully utilizes the characteristics that the ZnMgO material has a single hexagonal phase crystal structure, has high crystallization quality, steep absorption cut-off edge and the like, and has the advantages of large area, smooth surface and the like. The controllable preparation method provided by the invention has the advantages of simple steps, mild conditions, good repeatability and controllable process, and is beneficial to large-scale popularization and application.
Experimental results show that the ZnMgO ultraviolet detector prepared by the invention has low dark current, high responsivity and good device stability and repeatability, and the device still maintains good device performance after being placed for a long time.
Drawings
FIG. 1 is a schematic diagram of the structure of a ZnMgO ultraviolet detector provided by the invention;
FIG. 2 is a powder X-ray diffraction pattern of the ZnMgO film obtained in example 1 of the present invention;
FIG. 3 is a UV-VIS absorption spectrum of the ZnMgO thin film obtained in example 1 of the present invention;
FIG. 4 is a graph showing the current-voltage characteristics of the ZnMgO film obtained in example 1 of the present invention in the dark state;
FIG. 5 is a graph of current-time characteristics of the ZnMgO film obtained in example 1 of the present invention under 365nm illumination;
FIG. 6 is a graph of the photoresponse characteristic of the ZnMgO ultraviolet detector obtained in example 1 of the present invention;
FIG. 7 is an SEM scanning electron microscope image of the surface morphology of the ZnMgO thin film prepared in example 2 of the present invention;
FIG. 8 is the spectrum of the ZnMgO film prepared in example 3 of the present invention.
Detailed Description
For a further understanding of the invention, preferred embodiments of the invention are described below in conjunction with the examples, but it should be understood that these descriptions are included merely to further illustrate the features and advantages of the invention and are not intended to limit the invention to the claims.
All of the starting materials of the present invention, without particular limitation as to their source, may be purchased commercially or prepared according to conventional methods well known to those skilled in the art.
All the raw materials of the present invention are not particularly limited in purity, and the present invention preferably employs analytical purity or purity conventionally used in the field of ultraviolet detectors.
The invention provides a ZnMgO ultraviolet detector, which comprises a substrate;
a ZnMgO thin film layer compounded on the substrate;
the interdigital electrode layer is compounded on the ZnMgO thin film layer;
and the polymer layer is compounded on the surface of the interdigital electrode layer.
The invention has no special limitation on the specific structure of the ZnMgO ultraviolet detector in principle, and the personnel in the field can select and adjust the ZnMgO ultraviolet detector according to the actual situation, the raw material situation and the product requirement.
Specifically, the ZnMgO ultraviolet detector of the present invention preferably includes a substrate. Wherein, the ZnMgO film layer is compounded on the substrate. The ZnMgO ultraviolet detector also comprises an interdigital electrode layer. The interdigital electrode layer is compounded on the ZnMgO thin film layer. The ZnMgO ultraviolet detector also comprises a polymer layer. Wherein the polymer layer is compounded on the interdigital electrode surface of the interdigital electrode layer.
The invention is a complete and refined whole ZnMgO ultraviolet detector structure, further improves the performance of the ZnMgO ultraviolet detector, reduces the dark current of the ZnMgO ultraviolet detector, improves the stability, and preferably also comprises In particles. Wherein the In particles are preferably disposed on a non-interdigital electrode surface of the interdigital electrode layer. That is, a polymer layer and In particles are provided on the surface of the interdigital electrode layer at the same time, the polymer layer is provided on the surface of the interdigital electrode, and In particles are provided on the other surface (the surface of the non-interdigital electrode).
The invention particularly adopts In particles and gold (interdigital electrode layer) to form ohmic contact, and mainly plays a role In preventing the surface of a gold thin film from being scratched during testing and playing a better role In contact.
The invention is not limited to the specific selection and parameters of the substrate in principle, and can be selected and adjusted by those skilled in the art according to the actual conditions, the raw material conditions and the product requirements, in order to further improve the performance of the ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, wherein the substrate preferably comprises one or more of a sapphire substrate, a quartz substrate and a magnesium oxide substrate, and more preferably comprises a sapphire substrate, a quartz substrate or a magnesium oxide substrate. The thickness of the substrate is preferably 100-600 nm, more preferably 200-500 nm, and more preferably 300-400 nm.
The specific selection and parameters of the interdigital electrode layer are not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements. The thickness of the interdigital electrode layer is preferably 20-40 nm, more preferably 23-38 nm, more preferably 25-35 nm, and more preferably 27-32 nm.
The invention is not limited in principle to the specific selection and parameters of the polymer layer, and can be selected and adjusted by those skilled in the art according to the actual situation, the raw material situation and the product requirement, and the invention is to further improve the performance, reduce the dark current and improve the stability of the ZnMgO ultraviolet detector, and the polymer preferably comprises PMMA (polymethyl methacrylate) and/or PDMA (poly N, N-dimethylacrylamide), and more preferably PMMA or PDMA. The material can be polymethyl methacrylate, namely organic glass, has good light transmittance to ultraviolet light and visible light with the wavelength of more than 300nm, and can effectively isolate air. The thickness of the polymer layer is preferably 0.1-10 μm, more preferably 0.5-8 μm, more preferably 1-6 μm, and more preferably 3-4 μm.
The specific parameters of the In particles are not particularly limited In principle, and can be selected and adjusted by a person skilled In the art according to actual conditions, raw material conditions and product requirements, the diameter of the In particles is preferably 1-3 mm, more preferably 1.2-2.8 mm, more preferably 1.5-2.5 mm, and more preferably 1.8-2.3 mm, In order to further improve the performance of the ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability. The height of the In particles is preferably 0.1 to 1mm, more preferably 0.3 to 0.8mm, and still more preferably 0.5 to 0.6 mm.
The specific structure of the ZnMgO film is not particularly limited in principle, and a person skilled in the art can select and adjust the film according to actual conditions, raw material conditions and product requirements. That is, the ZnMgO film has a single hexagonal phase crystal structure, and more particularly, the ZnMgO film is preferably a ZnMgO film having (002) single orientation.
The invention has no special limitation on the specific composition of the ZnMgO film in principle, and a person skilled in the art can select and adjust the ZnMgO film according to the actual situation, the raw material situation and the product requirement, in order to further improve the performance of the ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, the ZnMgO material is a low-Mg ZnMgO material, and in the ZnMgO film, the mass ratio of ZnO to MgO is (7-11): 1, preferably (7.5-10.5): 1, more preferably (8-10): 1, more preferably (8.5 to 9.5): 1.
the invention has no special limitation on the specific parameters of the ZnMgO film in principle, and a person skilled in the art can select and adjust the ZnMgO film according to the actual situation, the raw material situation and the product requirement. Specifically, the absorption cut-off edge of the ZnMgO is 350-370 nm, preferably 352-368 nm, more preferably 355-365 nm, and more preferably 357-363 nm.
The invention has no special limitation on other parameters of the ZnMgO material in principle, and a person skilled in the art can select and adjust the ZnMgO material according to the actual situation, the raw material situation and the product requirement, in order to improve the performance parameters of the ZnMgO, be better beneficial to the subsequent application, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, the transmissivity of the ZnMgO in the absorption cut-off edge position (or the absorption cut-off edge vicinity) within the 5nm wave band is reduced by 70% -90%, more preferably reduced by 72% -88%, more preferably reduced by 75% -85%, more preferably reduced by 78% -83%.
The specific definition of the absorption cut-off edge is not particularly limited in principle, and may be defined and conceived by those skilled in the art according to the definition and concept of the absorption cut-off edge of such products, which can be selected and adjusted by those skilled in the art according to practical situations, raw material situations and product requirements.
The size of the ZnMgO crystal grain is not particularly limited in principle, and a person skilled in the art can select and adjust the size according to actual conditions, raw material conditions and product requirements, in order to improve the performance parameters of the ZnMgO, better facilitate subsequent application, reduce the dark current of a ZnMgO ultraviolet detector and improve the stability, the size of the ZnMgO crystal grain is preferably 0.3-1 nm, more preferably 0.4-0.9 nm, more preferably 0.5-0.8 nm, and more preferably 0.6-0.7 nm.
The method is characterized in that the parameters of the ZnMgO film are not particularly limited in principle, and a person skilled in the art can select and adjust the parameters according to actual conditions, raw material conditions and product requirements, in order to improve the performance parameters of the ZnMgO, better facilitate subsequent application, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, the length of the ZnMgO film is preferably 1-5 cm, more preferably 1.5-4.5 cm, more preferably 2-4 cm, and more preferably 2.5-3.5 cm. The width of the ZnMgO film is preferably 1-5 cm, more preferably 1.5-4.5 cm, more preferably 2-4 cm, and more preferably 2.5-3.5 cm. The thickness of the ZnMgO film is preferably 100-600 nm, more preferably 150-550 nm, more preferably 200-500 nm, more preferably 250-450 nm, and more preferably 300-400 nm.
The invention has no special limitation on other characteristics of the ZnMgO film in principle, and a person skilled in the art can select and adjust the film according to actual conditions, raw material conditions and product requirements, in order to improve the performance parameters of ZnMgO, better facilitate subsequent application, reduce the dark current of a ZnMgO ultraviolet detector and improve the stability, the ZnMgO film has a flat surface appearance, and the root-mean-square roughness of the ZnMgO film is preferably 0.1-2 nm, more preferably 0.3-1.8 nm, more preferably 0.5-1.5 nm, and more preferably 0.8-1.2 nm.
The performance parameters of the ZnMgO ultraviolet detector are not particularly limited in principle, and referring to the structure and the preparation method provided by the invention, a person skilled in the art can select and adjust the structure and the preparation method according to actual conditions, raw material conditions and product requirements.
Referring to fig. 1, fig. 1 is a schematic diagram of the structure of the ZnMgO ultraviolet detector provided by the present invention.
The invention also provides a preparation method of the ZnMgO ultraviolet detector, which comprises the following steps:
1) carrying out chemical vapor deposition on an organic zinc source and an organic magnesium source on a heating substrate under the condition of excessive oxygen to obtain a substrate on which a ZnMgO film grows;
2) firstly forming an interdigital electrode mask on the ZnMgO film obtained in the step, then forming a metal layer, and then removing the mask to form an interdigital electrode layer;
3) and compounding a polymer layer on the interdigital electrode of the interdigital electrode layer obtained In the step, and pressing In particles at the non-interdigital electrode to obtain the ZnMgO ultraviolet detector.
In the above preparation method of the present invention, the structure, composition, parameters and their optimization principles of the ZnMgO ultraviolet detector may all correspond to those of the above ZnMgO ultraviolet detector one to one, and are not described herein again.
The method comprises the steps of firstly carrying out chemical vapor deposition on an organic zinc source and an organic magnesium source on a heating substrate under the condition of excessive oxygen to obtain the substrate on which the ZnMgO film grows.
The specific parameters of the excess oxygen are not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements, the performance parameters of ZnMgO are improved, the performance of a ZnMgO ultraviolet detector is improved, the dark current of the ZnMgO ultraviolet detector is reduced, the stability is improved, and the oxygen flow rate is preferably 100-900 sccm, more preferably 200-800 sccm, more preferably 300-700 sccm, more preferably 400-600 sccm. In the chemical vapor deposition process of the present invention, the partial pressure of oxygen is preferably 1x102～1x103Pa, more preferably 3x102～8x102Pa, more preferably 5x102～6x102Pa。
The specific selection of the organic zinc source is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements.
The invention is not limited to the organic zinc source transport carrier gas and its parameters in principle, and can be selected and adjusted by the skilled in the art according to the actual conditions, the raw material conditions and the product requirements. The flow rate of the carrier gas for transporting the organic zinc source is preferably 10-30 sccm, more preferably 12-28 sccm, more preferably 15-25 sccm, and more preferably 18-22 sccm.
The specific selection and dosage of the organomagnesium source is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements. The mass ratio of the organic zinc source to the organic magnesium source is preferably (5-20): 1, more preferably (8-17): 1, more preferably (10-15): 1.
the invention is not limited to the transportation carrier gas of the organic magnesium source and the parameters thereof in principle, and can be selected and adjusted by the skilled in the art according to the actual situation, the raw material situation and the product requirement. The flow rate of the carrier gas for transporting the organic magnesium source is preferably 1 to 5sccm, more preferably 1.5 to 4.5sccm, more preferably 2 to 4sccm, and more preferably 2.5 to 3.5 sccm.
The specific temperature of the heating substrate is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements, the temperature of the heating substrate is preferably 400-800 ℃, more preferably 450-750 ℃, more preferably 500-700 ℃, and more preferably 550-650 ℃, in order to improve performance parameters of ZnMgO, improve the performance of a ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability.
The chemical vapor deposition method has no special limitation on the process parameters of the chemical vapor deposition in principle, and a person skilled in the art can select and adjust the process parameters according to actual conditions, raw material conditions and product requirements, and in order to improve the performance parameters of ZnMgO, improve the performance of a ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, the chemical vapor deposition time is preferably 1-3 hours, more preferably 1.2-2.8 hours, more preferably 1.5-2.5 hours, and more preferably 1.7-2.3 hours. The temperature of the chemical vapor deposition is preferably 400-800 ℃, more preferably 450-750 ℃, more preferably 500-700 ℃, and more preferably 550-650 ℃.
According to the invention, firstly, an interdigital electrode mask is formed on the ZnMgO film obtained in the above step, then a metal layer is formed, and then the mask is removed to form an interdigital electrode layer.
The method for forming the interdigital electrode mask is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements.
The method for forming the metal layer is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements, in order to improve performance parameters of ZnMgO, improve the performance of a ZnMgO ultraviolet detector, reduce dark current of the ZnMgO ultraviolet detector and improve stability, the method for forming the metal layer preferably comprises one or more of magnetron sputtering, thermal evaporation, small ion sputtering and ALD, and more preferably comprises magnetron sputtering, thermal evaporation, small ion sputtering or ALD. The method can be small ion sputtering, such as sputtering by a film plating machine. Specifically, the sputtering current of the small ion sputtering (sputtering by a small coater) is preferably 5 to 8mA, more preferably 5.5 to 7.5mA, and still more preferably 6 to 7 mA.
The mask removing mode is not particularly limited in principle, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements. Specifically, the time of the ultrasonic treatment is preferably 3-5 min, more preferably 3.2-4.8 min, more preferably 3.5-4.5 min, and more preferably 3.7-4.2 min.
And finally, compounding a polymer layer on the interdigital electrode of the interdigital electrode layer obtained In the step, and pressing In particles at the non-interdigital electrode to obtain the ZnMgO ultraviolet detector.
The invention is not particularly limited in principle to the compounding manner, and can be selected and adjusted by a person skilled in the art according to actual conditions, raw material conditions and product requirements, in order to improve the performance parameters of ZnMgO, improve the performance of a ZnMgO ultraviolet detector, reduce the dark current of the ZnMgO ultraviolet detector and improve the stability, the compounding manner preferably comprises spin coating and/or evaporation, and more preferably spin coating or evaporation. Specifically, the rotation speed of the spin coating is preferably 1000-6000 r/min, more preferably 2000-5000 r/min, and more preferably 3000-4000 r/min. The spin coating time is 30-90 s, more preferably 40-80 s, and more preferably 50-70 s.
The steps of the invention provide a ZnMgO film ultraviolet detector with a single hexagonal phase crystal structure and a steep absorption cut-off edge and a preparation method thereof. The method takes an organic zinc compound as a zinc source and an organic magnesium compound as a magnesium source, and the metal organic compound grows a ZnMgO thin film layer in chemical vapor deposition equipment under the condition of introducing excessive oxygen. The method uses a metal organic compound chemical vapor deposition method to prepare the ZnMgO film, increases oxygen flow, increases oxygen partial pressure and reduces internal oxygen defects, so that the prepared ZnMgO film has the characteristics of high crystallization quality, steep absorption cut-off edge and the like, the ZnMgO film with the specific excellent structural characteristic and crystallization quality is obtained, and the surface of the prepared device is combined with spin-coated polymethyl methacrylate (PMMA) to be matched with the specific structure and composition of an ultraviolet detector, so that the ZnMgO ultraviolet detector has lower dark current and better device stability.
The ZnMgO material obtained by the invention has a single hexagonal phase crystal structure, has the characteristics of high crystallization quality, steep absorption cut-off edge and the like, and the ZnMgO film material prepared by the invention also has the advantages of large area and smooth surface.
Experimental results show that the ZnMgO ultraviolet detector prepared by using the single hexagonal phase with good crystallization quality of the ZnMgO film prepared by the invention has low dark current, high responsivity and good device stability and repeatability, and the device still keeps good device performance after being placed for a long time.
For further explanation of the present invention, the ZnMgO ultraviolet detector and the method for manufacturing the same according to the present invention will be described in detail with reference to the following examples, but it should be understood that the examples are implemented on the premise of the technical solution of the present invention, and the detailed embodiments and the specific operation procedures are given only for further explanation of the features and advantages of the present invention, not for limitation of the claims of the present invention, and the scope of protection of the present invention is not limited to the following examples.
Example 1
Putting the cleaned sapphire substrate into an MOCVD growth chamber, adjusting the growth temperature to 500 ℃, and adjusting the pressure to 2x103Pa. Diethyl zinc was used as the zinc source, dimethyl metallocene magnesium as the magnesium source, with a carrier gas flow rate of 10sccm for the zinc source and 1sccm for the magnesium source. The flow rate of oxygen was 200sccm, which is much greater than the flow rates of the zinc and magnesium sources. And (5) growing for 2h, closing the organic source and the oxygen, and reducing the substrate temperature to room temperature at the rate of 0.2 ℃/s to obtain the ZnMgO film.
And forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO thin film material by using negative photoresist photoetching. And putting the obtained sample into a small-sized film plating machine, and sputtering metal gold under the condition that the pressure is 4Pa and the current is 8 mA. The colloid mask is then removed by ultrasound. Polymethyl methacrylate (PMMA) is spin-coated on the interdigital electrode, the rotating speed of a spin coater is 2000r/min, and the rotation time is 30 s. And pressing In particles on the interdigital electrode layer except the interdigital electrode to finally obtain the ZnMgO ultraviolet detector with the MSM structure.
Referring to fig. 1, fig. 1 is a schematic diagram of the structure of the ZnMgO ultraviolet detector provided by the present invention.
The ZnMgO film obtained in example 1 of the present invention was subjected to a powder X-ray diffraction (XRD) test.
Referring to fig. 2, fig. 2 is a powder X-ray diffraction pattern of the ZnMgO film obtained in example 1 of the present invention.
As can be seen from the graph in fig. 2, the crystal structure of the ZnMgO film prepared on the sapphire substrate is a single hexagonal phase structure. The absorption peak of ZnMgO (002) is sharper, which indicates that the crystallization quality is higher.
The ZnMgO film obtained in example 1 was subjected to an ultraviolet-visible light absorption spectrum test.
Referring to fig. 3, fig. 3 is a uv-vis absorption spectrum of the ZnMgO film obtained in example 1 of the present invention.
As can be seen from the spectrum in FIG. 3, the prepared ZnMgO film has a steep single light absorption cut-off edge, and the light absorption cut-off edge is about 365 nm.
The current-voltage characteristic curve test in the dark state was performed on the ZnMgO film obtained in example 1.
Referring to fig. 4, fig. 4 is a graph of current-voltage characteristics in a dark state of the ZnMgO film obtained in example 1 of the present invention.
As can be seen from the graph of FIG. 4, the dark current of the prepared ZnMgO ultraviolet detector is 0.3 muA at 10V, which indicates that the prepared ZnMgO ultraviolet detector has low dark current.
The ZnMgO ultraviolet detector obtained in example 1 was subjected to a current-time characteristic curve test under 365nm illumination.
Referring to FIG. 5, FIG. 5 is a graph showing the current-time characteristics of the ZnMgO film obtained in example 1 of the present invention under 365nm illumination.
As can be seen from the curve of FIG. 5, the prepared ZnMgO ultraviolet detector has good device stability and repeatability, and the device still maintains good device performance after being placed for a long time.
The optical response characteristics of the ZnMgO ultraviolet detector obtained in example 1 were tested.
Referring to fig. 6, fig. 6 is a graph of the photoresponse characteristic of the ZnMgO ultraviolet detector obtained in example 1 of the present invention.
As can be seen from the curve of FIG. 6, the peak responsivity of the prepared ZnMgO ultraviolet detector under 10V is 365nm, the peak responsivity is 4.3A/W, and the-3 dB cut-off edge is 382nm, which indicates that the prepared ZnMgO ultraviolet detector has high light responsivity.
Example 2
Putting the cleaned sapphire substrate into an MOCVD growth chamber, adjusting the growth temperature to 700 ℃, and adjusting the pressure to 2x103Pa. Diethyl zinc was used as the zinc source, dimethyl metallocene magnesium as the magnesium source, with a carrier gas flow rate of 10sccm for the zinc source and 1sccm for the magnesium source. The flow rate of oxygen was 200sccm, which is much greater than the flow rates of the zinc and magnesium sources. And (5) growing for 2h, closing the organic source and the oxygen, and reducing the substrate temperature to room temperature at the rate of 0.2 ℃/s to obtain the ZnMgO film.
The ZnMgO film prepared in example 2 of the present invention was characterized.
Referring to fig. 7, fig. 7 is an SEM scanning electron micrograph of the surface morphology of the ZnMgO film prepared in example 2 of the present invention.
As can be seen from FIG. 7, the ZnMgO thin film prepared by the present invention is composed of uniform hexagonal crystal grains, indicating that the thin film has a hexagonal wurtzite structure.
And forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO thin film material by using negative photoresist photoetching. And putting the obtained sample into a small-sized film plating machine, and sputtering metal gold under the condition that the pressure is 4Pa and the current is 8 mA. The colloid mask is then removed by ultrasound. Polymethyl methacrylate (PMMA) is spin-coated on the interdigital electrode, the rotating speed of a spin coater is 2000r/min, and the rotation time is 30 s. And pressing In particles on the interdigital electrode layer except the interdigital electrode to finally obtain the ZnMgO ultraviolet detector with the MSM structure.
The ZnMgO film and the device prepared in example 2 of the present invention were tested.
The crystal structure of the ZnMgO film prepared on the sapphire substrate is a single hexagonal phase structure. The prepared ZnMgO film has a steep single light absorption cut-off edge, and the light absorption cut-off edge is about 367 nm.
The dark current of the prepared ZnMgO ultraviolet detector is 0.8 muA under 10V, which shows that the prepared ZnMgO ultraviolet detector has low dark current. The prepared ZnMgO ultraviolet detector has good device stability and repeatability, and the device still keeps good device performance after being placed for a long time.
The peak value responsivity of the prepared ZnMgO ultraviolet detector under 10V is 367nm, the peak value responsivity is 2.1A/W, and the cut-off edge of-3 dB is 385nm, which shows that the prepared ZnMgO ultraviolet detector has high photoresponse.
Example 3
Putting the cleaned sapphire substrate into an MOCVD growth chamber, adjusting the growth temperature to 500 ℃, and adjusting the pressure to 2x103Pa. Diethyl zinc was used as the zinc source, dimethyl metallocene magnesium as the magnesium source, with a carrier gas flow rate of 10sccm for the zinc source and 1sccm for the magnesium source. The flow rate of oxygen was 200sccm, which is much greater than the flow rates of the zinc and magnesium sources. And (5) growing for 2h, closing the organic source and the oxygen, and reducing the substrate temperature to room temperature at the rate of 0.2 ℃/s to obtain the ZnMgO film.
The ZnMgO film prepared in example 3 of the present invention was characterized.
Referring to fig. 8, fig. 8 is an X-ray energy spectrum analysis spectrum of the ZnMgO film prepared in example 3 of the present invention.
As can be seen from FIG. 8, the ratio of the zinc element to the magnesium element in the ZnMgO film prepared by the present invention is about 17: 3.
and forming 20 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the ZnMgO thin film material by using negative photoresist photoetching. The obtained sample is put into a small-sized film plating machine, under the condition that the pressure is 4Pa, the current is 6mA, and metal gold is sputtered. The colloid mask is then removed by ultrasound. Polymethyl methacrylate (PMMA) is spin-coated on the interdigital electrode, the rotating speed of a spin coater is 2000r/min, and the rotation time is 30 s. And pressing In particles on the interdigital electrode layer except the interdigital electrode to finally obtain the ZnMgO ultraviolet detector with the MSM structure.
The ZnMgO film and device prepared in example 3 of the present invention were tested.
And (3) testing the ZnMgO film and the device, wherein the crystal structure of the ZnMgO film prepared on the sapphire substrate is a single hexagonal phase structure. The prepared ZnMgO film has a steep single light absorption cut-off edge, and the light absorption cut-off edge is about 361 nm.
The dark current of the prepared ZnMgO ultraviolet detector is 0.3 muA under 10V, which shows that the prepared ZnMgO ultraviolet detector has low dark current. The prepared ZnMgO ultraviolet detector has good device stability and repeatability, and the device still keeps good device performance after being placed for a long time.
The peak value responsivity of the prepared ZnMgO ultraviolet detector under 10V is 361nm, the peak value responsivity is 4.2A/W, and the cut-off edge of-3 dB is 380nm, which shows that the prepared ZnMgO ultraviolet detector has high photoresponse.
While the above description provides a ZnMgO thin film ultraviolet detector of single hexagonal phase crystal structure with steep absorption-cutoff edge and a method for making the same, the principles and embodiments of the present invention are described herein using specific examples, which are provided to facilitate understanding of the method and its core ideas, including the best mode, and to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any combination of the methods. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. The scope of the invention is defined by the claims and may include other embodiments that occur to those skilled in the art. Such other embodiments are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal languages of the claims.
Claims (10)
1. A ZnMgO ultraviolet detector, comprising a substrate;
a ZnMgO thin film layer compounded on the substrate;
the interdigital electrode layer is compounded on the ZnMgO thin film layer;
and the polymer layer is compounded on the surface of the interdigital electrode layer.
2. The ZnMgO ultraviolet detector of claim 1, wherein the light response cutoff edge of the ZnMgO ultraviolet detector is 380-400 nm;
the substrate comprises one or more of a sapphire substrate, a quartz substrate and a magnesium oxide substrate;
the thickness of the substrate is 100-600 nm;
the interdigital electrode layer is made of one or more of gold, silver, platinum and aluminum;
the thickness of the interdigital electrode layer is 20-40 nm.
3. The ZnMgO ultraviolet detector of claim 1, further comprising In particles disposed on a non-interdigitated electrode surface of the interdigitated electrode layer;
the diameter of the In particles is 1-3 mm;
the height of the In particles is 0.1-1 mm;
the ZnMgO ultraviolet detector has an MSM structure.
4. The ZnMgO ultraviolet detector according to claim 1, wherein the polymer comprises PMMA and/or PDMA;
the thickness of the polymer layer is 0.1-10 mu m;
the ZnMgO film has a single hexagonal phase crystal structure;
in the ZnMgO film, the mass ratio of ZnO to MgO is (7-11): 1;
and the absorption cut-off edge of the ZnMgO ranges from 350 nm to 370 nm.
5. The ZnMgO ultraviolet detector of claim 4, wherein the absorption cut-off edge is a light absorption cut-off edge;
the light absorption cut-off edge comprises a light absorption cut-off edge for ultraviolet light and visible light;
the ZnMgO has a steep absorption cut-off edge;
the transmittance of ZnMgO is reduced by 70-90% in the range of 5nm wave band at the position of absorption cut-off edge.
6. The ZnMgO ultraviolet detector of claim 1, wherein the ZnMgO has a grain size of 0.3 to 1 nm;
the length of the ZnMgO film is 1-5 cm;
the width of the ZnMgO film is 1-5 cm;
the thickness of the ZnMgO film is 100-600 nm;
the root mean square roughness of the ZnMgO film is 0.1-2 nm.
7. A preparation method of a ZnMgO ultraviolet detector is characterized by comprising the following steps:
1) carrying out chemical vapor deposition on an organic zinc source and an organic magnesium source on a heating substrate under the condition of excessive oxygen to obtain a substrate on which a ZnMgO film grows;
2) firstly forming an interdigital electrode mask on the ZnMgO film obtained in the step, then forming a metal layer, and then removing the mask to form an interdigital electrode layer;
3) and compounding a polymer layer on the interdigital electrode of the interdigital electrode layer obtained In the step, and pressing In particles at the non-interdigital electrode to obtain the ZnMgO ultraviolet detector.
8. The method of claim 7, wherein the organic zinc source comprises diethyl zinc and/or dimethyl zinc;
the organomagnesium source comprises dimethyldimagnesium and/or dimagnesium;
the conveying carrier gas of the organic zinc source comprises high-purity nitrogen and/or high-purity nitric oxide;
the flow rate of the conveying carrier gas of the organic zinc source is 10-30 sccm;
the delivery carrier gas of the organic magnesium source comprises high-purity nitrogen and/or high-purity nitric oxide;
the flow rate of the carrier gas for conveying the organic magnesium source is 1-5 sccm.
9. The preparation method according to claim 7, wherein the mass ratio of the organic zinc source to the organic magnesium source is (5-20): 1;
the flow rate of the oxygen is 100-900 sccm;
the partial pressure of oxygen in the chemical vapor deposition process is 1x102～1x103Pa；
The temperature of the heating substrate is 400-800 ℃;
the chemical vapor deposition time is 1-3 h;
the temperature of the chemical vapor deposition is 400-800 ℃.
10. The method according to claim 7, wherein the manner of forming the interdigital electrode mask comprises negative photoresist lithography;
the metal layer forming mode comprises one or more of magnetron sputtering, thermal evaporation, small ion sputtering and ALD;
the sputtering current of the small ion sputtering is 5-8 mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3-5 min;
the means of compounding include spin coating and/or evaporation.
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| CN115241325A (en) * | 2022-07-15 | 2022-10-25 | 集美大学 | Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof |
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