CN111584658B - Ga2O3Ultraviolet detector and preparation method thereof - Google Patents
Ga2O3Ultraviolet detector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims description 15
- 239000010408 film Substances 0.000 claims abstract description 73
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 57
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 50
- 239000011701 zinc Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 150000003752 zinc compounds Chemical class 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 239000012159 carrier gas Substances 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 150000002259 gallium compounds Chemical class 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000001228 spectrum Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 8
- 239000000084 colloidal system Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008520 organization Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 16
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 3
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- 230000007547 defect Effects 0.000 abstract description 3
- 238000011084 recovery Methods 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 150000002902 organometallic compounds Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 238000001259 photo etching Methods 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
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- 238000005520 cutting process Methods 0.000 description 2
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- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- -1 magnesium aluminate Chemical class 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 230000004298 light response Effects 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides Ga2O3The ultraviolet detector comprises a substrate and Ga which are sequentially stacked2O3Thin film and metal interdigital electrode, Ga2O3The film is doped with trace zinc. The present application also provides a Ga2O3A method for preparing an ultraviolet detector. Ga provided by the invention2O3Ultraviolet detector passing Ga2O3The doping of trace zinc element in the film increases zinc substitution and zinc gap defect, so that the prepared Ga2O3The thin film layer has the characteristics of high crystallization quality, no phase splitting, steep absorption edge, high photoresponse, quick dark current recovery and the like, so that the Ga-containing film contains2O3The thin film layer uv detector has both very high responsivity and very short response time.
Description
Technical Field
The invention relates to the technical field of ultraviolet detectors, in particular to Ga2O3An ultraviolet detector and a preparation method thereof.
Background
The ultraviolet detection technology is a novel dual-purpose detection technology developed after laser and infrared detection technologies, and plays a great role in the fields of missile tail flame detection, space detection, flame detection, space communication and the like at present; particularly, the detector working in a solar blind band (200-280nm) has greatly improved sensitivity because of no interference of solar ultraviolet rays. In recent years, wide bandgap semiconductor ultraviolet detectors are considered to be third generation ultraviolet detectors that can replace vacuum photomultipliers and Si photomultipliers due to their advantages of small size, light weight, no need for filters and no need for refrigeration during operation.
Ga2O3As a novel direct band gap wide forbidden band semiconductor, the forbidden band width at room temperature is about 4.9eV, and the absorption edge is just positioned in the solar blind waveband due to the large forbidden band width, so that the direct band gap wide forbidden band semiconductor is a natural material for preparing the solar blind ultraviolet detector. But now because of the Ga-based2O3The ultraviolet detector made of the material has lower comprehensive performance, and particularly, the response time of a device with higher responsivity is longer.
Disclosure of Invention
The technical problem to be solved by the invention is to provide Ga2O3Ultraviolet detector, Ga provided by the application2O3The ultraviolet detector has high light responsivity and very short response time.
In view of the above, the present application provides a Ga2O3The ultraviolet detector comprises a substrate and Ga which are sequentially stacked2O3Thin film and metal interdigital electrode, Ga2O3The film is doped with trace zinc.
Preferably, the Ga is2O3The preparation method of the film comprises the following steps:
organic gallium compound is used as a gallium source, high-purity oxygen is used as an oxygen source, deposition is carried out on the surface of a substrate by utilizing a metal organic chemical vapor deposition method, and Ga is obtained after cooling2O3A film;
in Ga2O3Intermittently replenishing the organic zinc compound during the growth of the thin film, wherein the time for replenishing the organic zinc compound is started from Ga2O3Ending in Ga 0.1-6 h after the film starts to grow2O30.1-6 hours before the growth of the film is stopped;
the specific mode of intermittently supplementing the organic zinc compound is to open the organic zinc compound for 10-600 s, close the organic zinc compound for 10-600 s, and repeatedly carry out the steps for 1-1000 times.
Preferably, the Ga2O3The thickness of the film is 100-600 nm; the metal interdigital electrode is a gold interdigital electrode, the thickness of the metal interdigital electrode is 20-40 nm, and indium particles are compounded on the surface of the metal interdigital electrode.
Preferably, the organic gallium compound takes high-purity nitrogen as a carrier gas, and the flow rate of the carrier gas is 10-40 sccm; the flow rate of the high-purity oxygen is 100-400 sccm; the organic zinc compound takes high-purity nitrogen as a carrier, and the flow rate of the carrier is 1-20 sccm.
Preferably, the organic gallium compound is selected from one or two of trimethyl gallium and triethyl gallium, and the organic zinc compound is selected from one or two of diethyl zinc and dimethyl zinc.
Preferably, the deposition temperature is 400-1100 ℃, the deposition time is 1-6 h, and the vacuum degree of the deposition is 5 multiplied by 102～1×104Pa。
Preferably, the time for replenishing the organozinc compound starts with Ga2O3Ending in Ga 0.3-0.7 h after the film starts to grow2O30.3 to 0.7 hour before the growth of the film is stopped.
Preferably, the organic zinc compound is intermittently supplemented in a specific way of opening the organic zinc compound for 30-160 s, closing the organic zinc compound for 20-160 s, and repeating for 10-100 times.
The present application also provides the Ga2O3The preparation method of the ultraviolet detector comprises the following steps:
preparation of Ga on the surface of a substrate2O3A film; the Ga is2O3The film is doped with trace zinc;
in Ga2O3And forming an interdigital electrode mask on the film, and removing the colloid mask after sputtering metal to obtain the metal interdigital electrode.
Preferably, indium particles are pressed on the metal interdigital electrode.
The present application provides a Ga2O3An ultraviolet detector comprises a substrate and Ga which are sequentially stacked2O3Thin film and metal interdigital electrode, wherein, Ga2O3The film is doped with trace zinc. The present application is achieved by providing Ga2O3Trace zinc is doped in the film, the content of the zinc can not be detected by a conventional detection method, but zinc substitution and zinc gap defects are increased, so that the obtained Ga2O3The thin film layer has the characteristics of high crystallization quality, no phase splitting, steep absorption edge cutting, quick dark current recovery and the like, so that the Ga-containing film contains2O3The thin film layer uv detector has both very high responsivity and very short response time.
Drawings
FIG. 1 shows Ga obtained in example 1 of the present invention2O3The structure schematic diagram of the ultraviolet detector;
FIG. 2 shows Ga obtained in example 1 of the present invention2O3Powder X-ray diffraction of the film;
FIG. 3 shows Ga obtained in example 1 of the present invention2O3A UV-VIS absorption spectrum of the film;
FIG. 4 shows Ga obtained in example 1 of the present invention2O3An X-ray energy spectrum (EDS) spectrum of the film;
FIG. 5 shows Ga obtained in example 1 of the present invention2O3A current-time map of the ultraviolet detector during ultraviolet illumination and shutdown;
FIG. 6 shows Ga obtained in example 1 of the present invention2O3Light response characteristic curve of ultraviolet detector.
Detailed Description
For a further understanding of the present invention, reference will now be made to the following preferred embodiments of the invention in conjunction with the examples, but it is to be understood that the description is intended to further illustrate the features and advantages of the invention and is not intended to limit the scope of the claims which follow.
In view of the present Ga2O3The application provides a Ga-based ultraviolet detector with low comprehensive performance2O3An ultraviolet detector having a high optical responsivity and a very short response time. Utensil for cleaning buttockThe embodiment of the invention discloses Ga2O3The ultraviolet detector comprises a substrate and Ga sequentially arranged in an overlapping manner2O3Thin film and metal interdigital electrode, Ga2O3The film is doped with trace zinc.
Ga as described in the present application2O3In the ultraviolet detector, the substrate and the metal interdigital electrode are both materials well known to those skilled in the art, for example, the substrate is selected from a sapphire substrate, magnesium oxide or magnesium aluminate, the metal interdigital electrode is specifically a gold interdigital electrode, and indium particles are compounded on the surface of the metal interdigital electrode.
The Ga is2O3The absorption edge of the film is 240-280 nm. The Ga is2O3The thickness of the film is 100 to 600nm, preferably 200 to 500nm, and more preferably 300 to 400 nm. The thickness of the metal interdigital electrode is 20-40 nm, and preferably 25-35 nm. The Ga is2O3The light response cut-off edge of the ultraviolet detector is 250-280 nm.
Ga as described in the present application2O3The preparation method of the film comprises the following steps: taking an organic gallium compound as a gallium source, taking high-purity oxygen as an oxygen source, depositing on the surface of a substrate by a metal organic chemical vapor deposition method, and cooling to obtain Ga2O3A film;
in Ga2O3Intermittently replenishing the organic zinc compound during the growth of the thin film, wherein the time for replenishing the organic zinc compound is started from Ga2O3The film starts to grow 0.1 to 6 hours later and ends at Ga2O30.1-6 h before the growth of the film is stopped;
the specific mode of intermittently supplementing the organic zinc compound is to open the organic zinc compound for 10 to 600 seconds, close the organic zinc compound for 10 to 600 seconds and repeatedly perform the operation for 1 to 1000 times.
The application adopts a metal organic compound chemical vapor deposition method to prepare Ga2O3Thin films, i.e. the Ga2O3The preparation of the film is carried out in a metal organic compound chemical vapor deposition device; before starting deposition, the substrate is first placedInto a cavity of a Metal Organic Chemical Vapor Deposition (MOCVD), wherein the substrate is a substrate known to those skilled in the art, and can be selected from sapphire substrate, magnesium oxide or magnesium aluminate; the substrate is preferably cleaned, dried and then placed in a growth chamber of MOCVD equipment.
After the substrate is placed into the cavity, the cavity is vacuumized, then the substrate is heated, which is the preparation work of metal organic compound chemical vapor deposition, and when the substrate is heated to the reaction temperature of deposition, Ga can be deposited on the surface of the substrate2O3A film.
In the preparation of Ga2O3In the process of the film, organic gallium compound is used as a gallium source, high-purity oxygen is used as an oxygen source, and Ga is carried out on the surface of the substrate2O3And (5) growing the thin film. In the present application, the organogallium compound is selected from one or two of trimethylgallium and triethylgallium, and in particular embodiments, the organogallium compound is selected from trimethylgallium; the organic gallium compound takes high-purity nitrogen as a carrier gas, the flow rate of the carrier gas is 10-40 sccm, and in a specific embodiment, the flow rate of the carrier is 20-30 sccm. The oxygen gas is used as an oxygen source with a flow rate of 100-400 sccm, and in the specific embodiment, the flow rate is 200-300 sccm.
During the above deposition, the organozinc compound is intermittently replenished at a time starting from Ga2O3The film starts to grow 0.1 to 6 hours later and ends at Ga2O30.1-6 h before the growth of the film is stopped, in order to obtain the final Ga2O3Trace zinc doping can be obtained in the film, and the time for replenishing the zinc source is started from Ga2O3Ending in Ga 0.3-0.7 h after the film starts to grow2O30.3 to 0.7 hour before the growth of the film is stopped. Similarly, the time of opening the organic zinc compound can also influence the doping of the zinc element in the film, and the specific mode of intermittently replenishing the zinc source is to open the zinc source for 10-600 s, close the zinc source for 10-600 s and repeatedly carry out the operation for 1-1000 times; in a specific embodiment, the specific mode of intermittently replenishing the zinc source is beatingAnd opening the zinc source for 30-160 s, closing for 20-160 s, and repeating for 10-100 times. The organic zinc compound is used as a zinc source doped with trace zinc, and can be selected from one or two of diethyl zinc and dimethyl zinc, the organic zinc compound takes high-purity nitrogen as carrier gas, the flow rate of the organic zinc compound is 10-40 sccm, and more specifically, the flow rate of the carrier gas is 2-5 sccm. In order to obtain a trace amount of zinc doping, the on-off timing and on-time of the organozinc compound have a great influence during the deposition process.
According to the invention, in the whole deposition process, the deposition temperature is 400-1100 ℃, and preferably 800-900 ℃; the deposition time is 1-6 h, preferably 1.5-2.5 h; the vacuum degree of the deposition is 5 multiplied by 102～1×104Pa, preferably 8X 102～5×103Pa。
The metal organic compound chemical vapor deposition method described herein is a chemical vapor deposition method well known to those skilled in the art, and the specific implementation process in this process is not particularly limited in this application, and may be performed according to a process well known to those skilled in the art.
After the deposition growth is finished, the temperature of the substrate is reduced to room temperature to obtain Ga2O3The cooling rate of the film is 0.2-0.8 ℃/s, preferably 0.4-0.6 ℃/s. In the present application, the room temperature is specifically 25 ± 5 ℃.
The present application also provides the Ga2O3The preparation method of the ultraviolet detector comprises the following steps:
preparation of Ga on the surface of a substrate2O3A film; the Ga is2O3The film is doped with trace zinc;
in Ga2O3And forming an interdigital electrode mask on the film, and removing the colloid mask after sputtering metal to obtain the metal interdigital electrode.
The invention firstly utilizes the metal organic compound chemical vapor deposition method to deposit Ga on the surface of a substrate2O3A film. The specific method is as described above, and is not described herein again.
Obtaining Ga2O3After the film, in Ga2O3And forming an interdigital electrode mask on the thin film material by using photoetching, and removing the colloid mask after sputtering metal to obtain the metal interdigital electrode.
The method for sputtering metal is not particularly limited, and a film plating machine can be adopted to prepare the metal electrode film, wherein the sputtering current of the film plating machine is 5-8 mA, and preferably 6-7 mA.
And then removing the colloid mask through ultrasound to obtain the metal interdigital electrode. The ultrasonic time is preferably 3-5 min.
Finally, pressing In particles on the metal interdigital electrode to obtain Ga with an MSM structure2O3An ultraviolet detector.
The invention uses the metal organic compound chemical vapor deposition method to prepare Ga2O3Film, by doping trace amount of zinc, zinc substitution and zinc gap defect are increased, so that prepared Ga2O3The thin film layer has the characteristics of high crystallization quality, no phase splitting, steep absorption edge cutting, quick dark current recovery and the like, so that the Ga-containing film contains2O3The thin film layer uv detector has both very high responsivity and very short response time.
In order to further understand the present invention, the following examples are given to illustrate Ga provided by the present invention2O3The ultraviolet detector and the method for manufacturing the same are described in detail, and the scope of the present invention is not limited by the following examples.
Example 1
Putting the cleaned sapphire substrate into an MOCVD growth chamber, adjusting the growth temperature to 900 ℃ and the pressure intensity to 5 multiplied by 103Pa; trimethyl gallium is used as a gallium source, the flow rate of carrier gas of the gallium source is 20sccm, the flow rate of oxygen is 200sccm, diethyl zinc is used as a zinc source in the growth process, the zinc source is opened after the growth is started for 0.2h, the flow rate of carrier gas of the zinc source is 3sccm, the zinc source is opened for 30s, the zinc source is closed for 120s, the operation is repeated twenty times, then the zinc source is stopped to be added, and the whole growth process is 2h (including the time of intermittently opening the zinc source); after the growth is finished, the organic source and the oxygen are closed, and the temperature is controlled to be 0.5 ℃/sThe temperature of the substrate is reduced to room temperature, and Ga with the thickness of about 300nm is obtained2O3A film;
in Ga2O3Forming 50 pairs of interdigital electrode masks with the space of 10 mu m and the length of 500 mu m on the thin film material by using negative photoresist photoetching; putting the obtained sample into a small-sized film plating machine, and sputtering metal gold under the condition that the pressure is 8Pa and the current is 6 mA; then removing the colloid mask through ultrasound, and pressing In particles on the interdigital electrode to obtain Ga with an MSM structure2O3The structure diagram of the ultraviolet detector is shown in figure 1;
for Ga obtained in example 12O3The film was subjected to powder X-ray diffraction (XRD) measurement to obtain a spectrum as shown in FIG. 2, from which it can be seen that only Ga2O3The diffraction peak of the compound has a sharper XRD absorption peak, which indicates that the crystal quality is higher;
for Ga obtained in example 12O3The film is subjected to ultraviolet-visible light absorption spectrum test, and the obtained spectrum is shown in figure 3, from which, the Ga prepared2O3The film has a steep single light absorption cut-off edge, and the light absorption cut-off edge is about 250 nm;
for Ga obtained in example 12O3The films were subjected to X-ray energy spectroscopy (EDS) to obtain a spectrum as shown in FIG. 4, from which it can be seen that Ga was produced2O3Only Ga, Al and O elements can be observed in the film, no obvious zinc element exists, and the Al element is derived from the substrate;
for Ga obtained in example 12O3The ultraviolet detector is characterized in that 10V voltage is applied to two ends of the detector, an ultraviolet lamp switch is used for carrying out current-time characteristic test, and the obtained spectrum is shown in figure 5, and the graph shows that the prepared ultraviolet detector has lower dark current which is about 10pA in a dark state; the light current is higher and can reach more than 28 muA when the light is irradiated by the ultraviolet light; when the ultraviolet light stops irradiating, the light can quickly recover to a dark current state, the 90-10% response time is 90ms, and the light is reduced to 0.1% of the highest photocurrent and only needs 155 s. The ultraviolet detector has high ultraviolet responsivity and short response time;
for Ga obtained in example 12O3Testing the photoresponse characteristic of the ultraviolet detector to obtain a spectrum shown as 6; as can be seen from the figure, Ga is produced2O3The light responsivity of the ultraviolet detector under 10V is 20A/W, the cut-off edge of-3 dB is 254nm, which shows that the prepared Ga2O3The ultraviolet detector has high light responsivity, and the cut-off edge is positioned in the solar blind wave band.
Comparative example 1
To verify the influence of trace doped zinc on the performance of the detector, the conditions were the same as in example 1 except that zinc was not doped; the growth conditions were as follows:
putting the cleaned sapphire substrate into an MOCVD growth chamber, adjusting the growth temperature to 900 ℃, and adjusting the pressure to 5 multiplied by 103Pa; trimethyl gallium is used as a gallium source, the flow rate of carrier gas of the gallium source is 20sccm, the flow rate of oxygen is 200sccm, the whole growth process is 2h, the organic source and the oxygen are closed after the growth is finished, the temperature of the substrate is reduced to room temperature at the rate of 0.5 ℃/s, and Ga with the thickness of about 300nm is obtained2O3A film;
in Ga2O3Forming 50 pairs of interdigital electrode masks with the spacing of 10 mu m and the length of 500 mu m on the film material by using negative photoresist photoetching; putting the obtained sample into a small-sized film plating machine, and sputtering metal gold under the condition that the pressure is 8Pa and the current is 6 mA; then removing the colloid mask through ultrasound; pressing In particles on the interdigital electrode to obtain Ga with MSM structure2O3An ultraviolet detector;
for Ga obtained in comparative example 12O3The films were subjected to powder X-ray diffraction (XRD) measurement, ultraviolet-visible absorption spectrum measurement and EDS measurement, and the results were the same as those of Ga obtained in example 12O3The films were identical: XRD shows that the crystal quality is high; the absorption spectrum shows that the film has a steep single light absorption cut-off edge, and the light absorption cut-off edge is about 250 nm; only Ga, Al and O elements can be observed in EDS;
for comparative example 1To Ga2O3An ultraviolet detector, wherein a voltage of 10V is applied to two ends of the detector, an ultraviolet lamp switch is used for carrying out a current-time characteristic test, Ga2O3The film has lower dark current under dark state, which is about 10 pA; the high photocurrent, which can reach more than 28 muA, can be obtained during the ultraviolet irradiation; it can be seen that the dark current and photocurrent properties substantially correspond to those of the thin film of example 1.
When the ultraviolet light stops irradiating, the 90-10% response time is 290ms, and the time for reducing the response time to 0.1% of the highest photocurrent is more than 10 s; the response time was significantly longer than that of example 1, indicating that the zinc element doped in example 1, although not directly detected, still significantly improved the performance of the thin film.
Example 2
In order to verify the influence of the zinc source start-up time on the detector performance, the conditions were the same as in example 1 except that the zinc source start-up time was changed; the start-up times for samples numbers 2-1, 2-2, 2-3, 2-4 were 0.1h, 0.5h, 0.8h, 1h, respectively (example 1 is the zinc source was turned on after 0.2h of start-up growth);
tests show that 4 groups of samples are Ga with better quality2O3The light absorption cut-off edges of the film are about 250nm, and except for EDS data of samples 2-4, no zinc element is detected in other samples;
after four groups of samples are prepared into the ultraviolet detector, the response time of other samples to the device is obviously shortened except that the sample 2-1 has no obvious influence on the response time of the device.
Example 3
To verify the effect of the on-time of the zinc source per cycle on the detector performance, the conditions were the same as in example 1 except that the on-time of the zinc source was varied; the open times of the zinc sources for the samples numbered 3-1, 3-2, 3-3, 3-4 are: opening for 10 s; opening for 60 s; opening for 120 s; opening for 180 s; the four samples were cycled off 120s each and twenty times each (example 1 was 30s zinc source on, 120s off, twenty iterations).
Tests show that 4 groups of samples are Ga with better quality2O3The light absorption cut-off edges of the film are about 250nm, and except that a small amount of zinc element is detected by EDS data of samples 3-4, no zinc element is detected by other samples.
After four groups of samples are prepared into the ultraviolet detector, the response time of other samples to the device is obviously shortened except that the sample 3-1 has no obvious influence on the response time of the device.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. Ga2O3The ultraviolet detector is characterized by comprising a substrate and Ga which are sequentially stacked2O3Thin film and metal interdigital electrode, Ga2O3The film is doped with trace zinc; ga2O3XRD test pattern of film only Ga2O3The diffraction peak of (a), only Ga, Al and O elements can be observed in an EDS test spectrum, and the Al element is originated from the substrate;
the Ga2O3The preparation method of the film comprises the following steps:
organic gallium compound is used as gallium source, high-purity oxygen is used as oxygen source, and metal organization is utilizedDepositing on the surface of the substrate by a chemical vapor deposition method, and cooling to obtain Ga2O3A film;
in Ga2O3Intermittently replenishing the organic zinc compound during the growth of the thin film, wherein the time for replenishing the organic zinc compound is started from Ga2O3The film starts to grow 0.2 to 0.8h later and ends in Ga2O30.3-0.7 h before the growth of the film is stopped;
the specific mode of intermittently supplementing the organic zinc compound is to open the organic zinc compound for 30-120 s, close the organic zinc compound for 20-160 s, and repeatedly carry out the steps for 1-1000 times.
2. The Ga according to claim 12O3UV detector, characterized in that the Ga2O3The thickness of the film is 100-600 nm; the metal interdigital electrode is a gold interdigital electrode, the thickness of the metal interdigital electrode is 20-40 nm, and indium particles are compounded on the surface of the metal interdigital electrode.
3. Ga according to claim 12O3The ultraviolet detector is characterized in that the organic gallium compound takes high-purity nitrogen as carrier gas, and the flow rate of the carrier gas is 10-40 sccm; the flow rate of the high-purity oxygen is 100-400 sccm; the organic zinc compound takes high-purity nitrogen as a carrier, and the flow rate of the carrier is 1-20 sccm.
4. Ga according to claim 12O3The ultraviolet detector is characterized in that the organic gallium compound is selected from one or two of trimethyl gallium and triethyl gallium, and the organic zinc compound is selected from one or two of diethyl zinc and dimethyl zinc.
5. Ga according to claim 12O3The ultraviolet detector is characterized in that the deposition temperature is 400-1100 ℃, the deposition time is 1-6 h, and the vacuum degree of deposition is 5 multiplied by 102～1×104Pa。
6. Ga according to claim 12O3The preparation method of the ultraviolet detector comprises the following steps:
preparation of Ga on the surface of a substrate2O3A film; the Ga is2O3The film is doped with trace zinc;
in Ga2O3And forming an interdigital electrode mask on the film, and removing the colloid mask after sputtering metal to obtain the metal interdigital electrode.
7. The production method according to claim 6, wherein indium particles are pressed on the metal interdigital electrodes.
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