CN111785682A - Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit - Google Patents

Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit Download PDF

Info

Publication number
CN111785682A
CN111785682A CN202010652758.9A CN202010652758A CN111785682A CN 111785682 A CN111785682 A CN 111785682A CN 202010652758 A CN202010652758 A CN 202010652758A CN 111785682 A CN111785682 A CN 111785682A
Authority
CN
China
Prior art keywords
printing
integrated circuit
carbon
dimensional multilayer
multilayer integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010652758.9A
Other languages
Chinese (zh)
Other versions
CN111785682B (en
Inventor
韩拯
董宝娟
陈茂林
李小茜
张桐耀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanxi University
Original Assignee
Shanxi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanxi University filed Critical Shanxi University
Priority to CN202010652758.9A priority Critical patent/CN111785682B/en
Publication of CN111785682A publication Critical patent/CN111785682A/en
Application granted granted Critical
Publication of CN111785682B publication Critical patent/CN111785682B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Abstract

The invention belongs to the field of application research of microelectronics, chips, integrated circuits and the like, and particularly relates to a method for 3D printing of an all-carbon three-dimensional multilayer integrated circuit. The method is based on a 3D printing technology, realizes direct printing and in-situ electrode interconnection of a three-dimensional multilayer integrated circuit in a multi-layer and cross-scale manner in a spray printing mode, and specifically comprises the following steps: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, mixing semiconductor carbon-based nano materials, metallic carbon-based nano materials, insulating carbon-based nano materials and solvent polymers which are alternately used as raw materials from a first layer, automatically selecting raw materials with corresponding electrical characteristics according to the materials required by the integrated circuit in the layers, and printing and curing the required integrated circuit in situ by using a corresponding high-precision nozzle and combining a high-precision positioning platform; and finally, forming the target three-dimensional multilayer integrated circuit until each image layer is accurately positioned, printed and solidified.

Description

Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit
Technical Field
The invention belongs to the field of application research of microelectronics, chips, integrated circuits and the like, and particularly relates to a method for 3D printing of an all-carbon three-dimensional multilayer integrated circuit.
Background
Since the first demonstration of the metal oxide semiconductor field effect transistor in 1960, the technology of etching, processing and the like from top to bottom of a silicon-based semiconductor with a Complementary Metal Oxide Semiconductor (CMOS) circuit as a core forms an important basis of the modern computer technology, namely the skyscraper. At present, the mainstream silicon semiconductor technology adopts a 3D integration mode no matter a logic chip or a memory chip, namely a multilayer circuit is adopted, and the integration density of field effect transistors on the chip is greatly improved in an interlayer interconnection mode.
With the rapid development of modern microelectronic technology, the market demands for innovative technologies such as new-concept devices and new-concept manufacturing methods are increasingly prominent. Especially, under the large background that the nano-processing technology approaches the precision limit and the moore's law is more and more difficult, the development trend of the semiconductor industry in the later moore times will focus on the exploration in the directions of atomic manufacturing, additive manufacturing, multifunctional nano-compounding and the like. As is well known, the conventional semiconductor processing technology adopts the core process route of "top-down" and "material reduction manufacturing", in which multiple necessary steps of silicon wafer and other substrates, photoresist, mask, electrode evaporation and stripping in solution are adopted. The complicated processing steps have severe requirements on the cleanliness of the processing environment, and complex matched processing and the like are required among corresponding devices.
At present, the number of patents related to the additive manufacturing of semiconductor integrated circuits in China is very small. There are patents in the united states of america that are the primary country of invention for 3D printing techniques involving some semiconductor circuits. For example, aerosol jet printing technology developed by Optomec corporation of the united states (US 20140342082a1) can effectively make 3D printed electronic products. The research team of the university of Duke and Manchester university in the united kingdom successfully printed composite thin film transistors based on silver nanowires, boron nitride nanosheets, carbon nanotubes and other materials with 200-micron wide conductive channels in 2019 by using the AJ300 series AerosolJet3D printer of the company, and corresponding results were published in the journal of ACSNano academy of academic (DOI:10.1021/acsnano. 9b04337). To date, no 3D printing technology has been reported for integrated devices based on all-carbon materials, especially for all-carbon three-dimensional integrated circuits.
In view of the above background, the invention provides a 3D printing manufacturing method for an all-carbon three-dimensional multilayer integrated circuit, which adopts a process route taking 'bottom-up' and 'additive manufacturing' as cores, and a direct-writing 3D printing process which does not need photoresist, mask plate, electrode evaporation, stripping and other steps is omitted. The invention has low cost and simple device, can print integrated semiconductor circuits in multiple layers and can achieve the aim of vertical 3D integrated large-scale circuits. The technology of the invention can be further expanded to any substrate (flexible substrate, functional material substrate, etc.), and large-scale integrated circuits can be prepared under lower environmental requirements.
Disclosure of Invention
The invention aims to provide a method for 3D printing (micro-nano scale additive manufacturing) of an all-carbon three-dimensional multilayer integrated circuit, and the universality of the method is proved by successfully preparing various channel semiconductor material systems. The method can realize stable and controllable printing of the three-dimensional multilayer integrated circuit on a large-area, multilayer and arbitrary substrate. The integrated circuit framework can be in any size from micro-nano scale to macro-millimeter scale. The structure is completely consistent with that of the traditional silicon-based three-dimensional multilayer integrated circuit, but the structure is not limited by a hard substrate, and the printing can be carried out on any base such as a flexible substrate, a transparent substrate and the like. The printed all-carbon integrated circuit has logic operation capability directly, can realize the integration of semiconductor devices and various photoelectric components, and each functional component adopts a 3D printing method, and realizes the printing and interconnection of various carbon-based media by changing printing raw materials or needles and other methods.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for 3D printing of an all-carbon three-dimensional multilayer integrated circuit is based on a 3D printing (additive manufacturing) technology, adopts a spray printing mode, is multi-level and cross-scale, and realizes direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit, and comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, mixing semiconductor carbon-based nano materials, metallic carbon-based nano materials, insulating carbon-based nano materials and solvent polymers which are alternately used as raw materials from a first layer, automatically selecting raw materials with corresponding electrical characteristics according to the materials required by the integrated circuit in the layers, and printing and curing the required integrated circuit in situ by using a corresponding high-precision nozzle and combining a high-precision positioning platform;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and solidified, and finally forming the target three-dimensional multilayer integrated circuit.
Further, the spray printing may be replaced with photo-curing liquid-phase printing, or a mixture of inkjet printing and photo-curing liquid-phase printing may be used.
Further, the semiconductor carbon-based nanomaterial in step 1 is one of a p-type single-walled carbon nanotube material or an n-type single-walled carbon nanotube material. The single-walled carbon nanotube can be prepared by an arc discharge method or a chemical vapor deposition method. The arc discharge method is characterized in that metal powder is mixed in graphite, the arc discharge time is 1-30 min, and the power output is 750-3000W, so that the single-walled carbon nanotube is prepared; the chemical vapor deposition method comprises introducing methane (CH) into 140cm quartz tube4) At 800 ℃, methane is cracked and nucleated under the action of iron simple substance (Fe) to grow the carbon nano tube. Single-walled carbon nanotubes exhibit metallic or semiconducting properties based on their chirality, and thus a separation process is generally required to obtain high-purity semiconducting carbon nanotubes. The separation process generally comprises dispersing 5mg of carbon nanotubes in 3000mL of aqueous solution containing 1% of sodium dodecyl sulfate or sodium dodecyl benzene sulfonate and other surfactants, and then performing ultrasonic treatment, centrifugation and other processes, such as density gradient ultracentrifugation, gel chromatography separation or non-covalent polymer modification separation, to realize the separation of carbon nanotubes with different diameters, conductive properties and even chiral indexes. By subjecting carbon nanotubes to boron or nitrogenDoping can lead to p-type or n-type behavior, respectively, and n-type carbon nanotubes can also be prepared by pyrolysis of melamine under argon at high temperatures of 300-.
Further, in the step 1, the metallic carbon-based nanomaterial is graphene nanopowder or metallic carbon nanotubes. Based on the preparation and separation method of the carbon nano-tube in the previous step, the carbon nano-tube with excellent metallicity is obtained.
Further, in the step 1, the insulating carbon-based nanomaterial is graphene oxide or an insulating carbon nanotube.
Further, the solvent polymer in step 1 may be a thermosetting liquid resin or an active substance photosensitive glue.
Further, the curing in the step 1 is divided into heating curing for thermosetting liquid resin and ultraviolet illumination curing for active substance photosensitive adhesive; the temperature for heating and curing the thermosetting liquid resin is 20-300 ℃.
Furthermore, the order and interconnection manner between layers of the target three-dimensional multilayer integrated circuit in the step 2 are not limited. For example, may comprise any number of layers of MOSFETs, any number of layers of functional or heat dissipating units, etc. The characteristic is different from 3D integration of silicon-based semiconductor chips, and only one layer of the bottom layer of the silicon-based semiconductor chip is MOSFET at present.
Compared with the prior art, the invention has the following advantages:
1) the method prints the full-carbon large-scale integrated circuit by a bottom-up additive manufacturing method, can avoid the dependence of the traditional processing process on complex and severe manufacturing environment, has low manufacturing cost of printing equipment and wide application material range.
2) The raw materials are all from carbon-based nano materials (graphene, graphene oxide, carbon nano tubes and the like), the material is suitable for various substrates except a silicon substrate, and the material is green and environment-friendly and is compatible with application scenes of flexible chips and the like.
Drawings
FIG. 1 is a process scheme of the present invention;
FIG. 2 is a schematic view of the apparatus of the present invention; the device comprises a substrate, a Semiconductor carbon-based nano material, a metallic carbon-based nano material and an insulating carbon-based nano material, wherein 1 and 2 are the Semiconductor carbon-based nano material, the metallic carbon-based nano material and the insulating carbon-based nano material, 3 is feeding 'ink' mixed with 1 and 2, 4 is a high-precision nozzle, 5 is a high-precision positioning platform, 6 is a multilayer three-dimensional interconnection integrated circuit, 7 is a basic MOSFET logic unit schematic diagram in the circuit, and M, I and S letters respectively represent a Metal, an Insulator and a Semiconductor.
Detailed Description
Example 1
A3D printing method of an all-carbon three-dimensional multilayer integrated circuit is based on a 3D printing technology, and adopts a spray printing mode to realize direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit in a multi-layer and cross-scale mode, and comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, mixing a p-type single-walled carbon nanotube material, graphene nano powder, graphene oxide and thermosetting liquid resin alternately from a first layer to prepare ink as a raw material, automatically selecting a raw material with corresponding electrical characteristics according to the material required by the integrated circuit in the layer, and printing in situ by using a corresponding high-precision nozzle and combining a high-precision positioning platform to obtain the required integrated circuit;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and thermally cured in a thermal curing mode, and heating and curing at 20 ℃ to finally form the target three-dimensional multilayer integrated circuit.
Example 2
A method for 3D printing of an all-carbon three-dimensional multilayer integrated circuit is based on a 3D printing technology, and direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit are achieved in a multi-layer and cross-scale mode in a photocuring liquid phase printing mode, and a substrate can be a flexible substrate. The method comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range,
step 2, starting from a first image layer, mixing an n-type single-walled carbon nanotube material, graphene nano powder, graphene oxide and an active substance photosensitive adhesive alternately to prepare ink as a raw material, automatically selecting the raw material with corresponding electrical characteristics according to the material required by the integrated circuit in the image layer, using a corresponding high-precision extrusion type needle head, combining a high-precision positioning platform, printing the raw material on a flexible substrate in situ, and curing the raw material by ultraviolet light to obtain the required flexible integrated circuit;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and solidified, and finally forming the target flexible three-dimensional multilayer integrated circuit.
Example 3
A3D printing method of an all-carbon three-dimensional multilayer integrated circuit is based on a 3D printing technology, and adopts a spray printing mode to realize direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit in a multi-layer and cross-scale mode, and comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, mixing a p-type single-walled carbon nanotube material, graphene nano powder, graphene oxide and thermosetting liquid resin alternately from a first layer to prepare ink as a raw material, automatically selecting a raw material with corresponding electrical characteristics according to the material required by the integrated circuit in the layer, and printing in situ by using a corresponding high-precision nozzle and combining a high-precision positioning platform to obtain the required integrated circuit;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and thermally cured in a thermal curing mode, and heating and curing at 100 ℃ to finally form the target three-dimensional multilayer integrated circuit.
Example 4
A3D printing method of an all-carbon three-dimensional multilayer integrated circuit is based on a 3D printing technology, and adopts a spray printing mode to realize direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit in a multi-layer and cross-scale mode, and comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, mixing a p-type single-walled carbon nanotube material, graphene nano powder, graphene oxide and thermosetting liquid resin alternately from a first layer to prepare ink as a raw material, automatically selecting a raw material with corresponding electrical characteristics according to the material required by the integrated circuit in the layer, and printing in situ by using a corresponding high-precision nozzle and combining a high-precision positioning platform to obtain the required integrated circuit;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and thermally cured in a thermal curing mode, and heating and curing at 300 ℃ to finally form the target three-dimensional multilayer integrated circuit.

Claims (8)

1. A3D printing method of an all-carbon three-dimensional multilayer integrated circuit is characterized in that based on a 3D printing technology, direct printing and in-situ electrode interconnection of the three-dimensional multilayer integrated circuit are realized in a multi-layer and cross-scale mode in a spray printing mode, and the method comprises the following specific steps:
step 1, outputting a vector graph: decomposing a vector integrated circuit which is designed in advance into a plurality of layers within a printing precision range, from a first layer, mixing a semiconductor carbon-based nano material, a metallic carbon-based nano material, an insulating carbon-based nano material and a solvent polymer alternately to prepare ink as raw materials, automatically selecting the raw materials with corresponding electrical characteristics according to the materials required by the integrated circuit in the layers, and printing and curing the required integrated circuit in situ by using a corresponding extrusion type needle head or a high-precision nozzle and combining a high-precision positioning platform;
and 2, repeating the step 1 until each image layer is accurately positioned, printed and solidified, and finally forming the target three-dimensional multilayer integrated circuit.
2. The method for 3D printing of the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the spray printing is replaced by photo-curing liquid-phase printing or a mixture of ink-jet printing and photo-curing liquid-phase printing is used.
3. The method of claim 1, wherein the semiconductor carbon-based nanomaterial of step 1 is one of a p-type single-walled carbon nanotube material or an n-type single-walled carbon nanotube material.
4. The method for 3D printing of the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the metallic carbon-based nanomaterial in step 1 is graphene nano-powder or metallic carbon nanotubes.
5. The method for 3D printing of the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the insulating carbon-based nanomaterial in step 1 is graphene oxide or insulating carbon nanotubes.
6. The method for 3D printing the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the solvent polymer in the step 1 is a thermosetting liquid resin or an active substance photosensitive glue.
7. The method for 3D printing of the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the curing in the step 1 is divided into heating curing for thermosetting liquid resin, ultraviolet irradiation curing for active substance photosensitive glue; the temperature for heating and curing the thermosetting liquid resin is 20-300 ℃.
8. The method for 3D printing the all-carbon three-dimensional multilayer integrated circuit according to claim 1, wherein the sequence and interconnection manner among the layers of the target three-dimensional multilayer integrated circuit in the step 2 are not limited.
CN202010652758.9A 2020-07-08 2020-07-08 Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit Active CN111785682B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010652758.9A CN111785682B (en) 2020-07-08 2020-07-08 Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010652758.9A CN111785682B (en) 2020-07-08 2020-07-08 Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit

Publications (2)

Publication Number Publication Date
CN111785682A true CN111785682A (en) 2020-10-16
CN111785682B CN111785682B (en) 2022-11-11

Family

ID=72758272

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010652758.9A Active CN111785682B (en) 2020-07-08 2020-07-08 Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit

Country Status (1)

Country Link
CN (1) CN111785682B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140152383A1 (en) * 2012-11-30 2014-06-05 Dmitri E. Nikonov Integrated circuits and systems and methods for producing the same
CN105576123A (en) * 2016-01-08 2016-05-11 中国计量学院 Full-graphene group flexible organic field-effect transistor and manufacturing method thereof
US20160190491A1 (en) * 2014-12-31 2016-06-30 Tsinghua University Method of making n-type thin film transistor
CN205452360U (en) * 2016-01-05 2016-08-10 江苏科技大学 Flexible field effect transistor
CN106941130A (en) * 2016-01-05 2017-07-11 江苏科技大学 Flexible field-effect transistor and preparation method thereof
WO2017176003A1 (en) * 2016-04-04 2017-10-12 (주)파루 Semiconductor ink composition containing carbon nanotubes and method for manufacturing thin film transistor using same
CN110330352A (en) * 2019-07-29 2019-10-15 上海幻嘉信息科技有限公司 A kind of method of photocuring 3D printing carbon fiber

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140152383A1 (en) * 2012-11-30 2014-06-05 Dmitri E. Nikonov Integrated circuits and systems and methods for producing the same
US20160190491A1 (en) * 2014-12-31 2016-06-30 Tsinghua University Method of making n-type thin film transistor
CN205452360U (en) * 2016-01-05 2016-08-10 江苏科技大学 Flexible field effect transistor
CN106941130A (en) * 2016-01-05 2017-07-11 江苏科技大学 Flexible field-effect transistor and preparation method thereof
CN105576123A (en) * 2016-01-08 2016-05-11 中国计量学院 Full-graphene group flexible organic field-effect transistor and manufacturing method thereof
WO2017176003A1 (en) * 2016-04-04 2017-10-12 (주)파루 Semiconductor ink composition containing carbon nanotubes and method for manufacturing thin film transistor using same
CN110330352A (en) * 2019-07-29 2019-10-15 上海幻嘉信息科技有限公司 A kind of method of photocuring 3D printing carbon fiber

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KWON，J等: "《Three-dimensional monolithic integration in flexible printed organic transistors》", 《NATURE COMMUNICATIONS》 *
KWON,J等: "《Three-Dimensional,Inkjet-Printed Organic Transistors and Integrated Circuit with 100% Yield,High Uniformity,and Long-Term Stability》", 《ACS NANO》 *
SHIHENG LU,JORGE A.CARDENAS等: "《Flexible,Print-in-Place 1D-2D Thin-Flim Transistors Using Aerosol Jet Printing》", 《ACS NANO》 *
SUN,YA等: "《Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density》", 《IEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS》 *

Also Published As

Publication number Publication date
CN111785682B (en) 2022-11-11

Similar Documents

Publication Publication Date Title
Ullah et al. Graphene transfer methods: A review
Liu et al. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
Homenick et al. Fully printed and encapsulated SWCNT-based thin film transistors via a combination of R2R gravure and inkjet printing
Hu et al. A general ink formulation of 2D crystals for wafer-scale inkjet printing
Tong et al. Printed thin-film transistors: research from China
Wu et al. A simple and efficient approach to a printable silver conductor for printed electronics
Kim et al. All‐solution‐processed van der waals heterostructures for wafer‐scale electronics
Kataria et al. Chemical vapor deposited graphene: From synthesis to applications
Chen et al. Fully integrated graphene and carbon nanotube interconnects for gigahertz high-speed CMOS electronics
TWI552309B (en) Integrated circuits and systems and methods for producing the same
Wang et al. Dispensing of high concentration Ag nano-particles ink for ultra-low resistivity paper-based writing electronics
US20090252891A1 (en) Structure matter of thin film particles having carbon skeleton, processes for the production of the structure matter and the thin-film particles and uses thereof
CN103038835A (en) Transparent electrodes based on graphene and grid hybrid structures
KR101273695B1 (en) Method for forming graphene pattern and method for manufacturing electronic element having graphene pattern
Sun et al. All‐carbon thin‐film transistors as a step towards flexible and transparent electronics
CN110248477B (en) Manufacturing method of embedded flexible conductive circuit
CN203632962U (en) Graphene-based conductive ink all-printing printed circuit board
Xiang et al. Wafer‐Scale High‐Yield Manufacturing of Degradable Electronics for Environmental Monitoring
CN104576394A (en) Preparation method for printing independent carbon nano tube thin film transistor in large area
Arthur et al. Carbon nanomaterial commercialization: Lessons for graphene from carbon nanotubes
Cai et al. Fabrication of copper electrode on flexible substrate through Ag+-based inkjet printing and rapid electroless metallization
Pandey et al. Recent progress in the development of printed electronic devices
CN111785682B (en) Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit
JP4795412B2 (en) Method for forming conductive material, conductive material formed by the forming method, and device having the conductive material
Chen et al. Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant