CN205452360U - Flexible field effect transistor - Google Patents
Flexible field effect transistor Download PDFInfo
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- CN205452360U CN205452360U CN201620008969.8U CN201620008969U CN205452360U CN 205452360 U CN205452360 U CN 205452360U CN 201620008969 U CN201620008969 U CN 201620008969U CN 205452360 U CN205452360 U CN 205452360U
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- effect transistor
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Abstract
The utility model discloses a flexible field effect transistor relates to the semiconductor technology field. Flexible field effect transistor includes: the interval sets up on flexible substrate and is located the source electrode and the drain electrode of coplanar, connect through semiconductor conducting channel electricity between source electrode and the drain electrode, cover in dielectric layer on the semiconductor conducting channel, and, fold and establish grid on the dielectric layer. Wherein, the semiconductor conducting channel adopts carbon nanotube layer or redox graphite alkene layer. The utility model discloses an adopt micro -electro -mechanical system processing technology, printing electronic technology and nanocarbon material etc. To combine together, the preparation has a functional field effect transistor on flexible substrate, and its simple structure, technology is nimble, the cost is lower, be suitable for mass production.
Description
Technical field
This utility model relates to technical field of semiconductors, particularly to a kind of flexible field-effect transistor.
Background technology
Conventional electronics in current quasiconductor and microelectronic industry, it is common that combine micro-nano processing technique on a silicon substrate and be prepared.These silicon-based electronic devices have played great effect to the development of human society in eighties of last century the second half, however as future electronic product in the demand of the aspects such as convenience, ultra-thin property, flexible, need to look for the electronic device of a new generation and relevant technology of preparing.Flexible electronic (FlexibleElectronics), with the advantage of the aspects such as the ductility of its uniqueness, diversification, low cost, obtains the swiftest and the most violent development in recent years.At present, flexible electronic is the general designation of a kind of technology, because being in the stage just developed.
The maximum feature of flexible electronic device is the flexibility of its structure so that it is both had conventional semiconductors function electronic device feature, makes again device have the ability adapting to environment large deformation.Flexible device it is crucial that structure flexibility design.As a example by plastic straighttube and corrugated tube, the stretchable amount of plastic straighttube and amount of bow are the least, but have resilient corrugated tube and make structure have the biggest stretching and crooked deformability by the expansion performance of ripple struction.
But, due to the distance that itself the physical characteristic such as electricity of organic semiconductor is the biggest compared with silicon-based semiconductor, as lower than inorganic semiconductor in mobility and the device operating frequencies of organic semiconducting materials, organic semi-conductor photovoltaic energy conversion device and luminescent device conversion efficiency are less than inorganic semiconductor device etc..
In recent years, along with micro-nano processing and manufacturing level improve constantly, and the continuous extension of quasiconductor and Material Field, the preparation of flexible electronic device can be realized by different high accuracy manufacturing process and method.This type of flexible electronic device has an ability of superperformance of keeping under tensile, compressive, bending and torsion etc. deform, and good portability and adaptability.
Field-effect transistor (FieldEffectTransistor, FET) have input resistance height, noise is little, low in energy consumption, dynamic range big, be easily integrated, do not have the advantage such as secondary-breakdown phenomenon, safety operation area field width, on a large scale and is being widely used in super large-scale integration.
At present, most field-effect transistor is based on hard material such as monocrystal silicon etc., and the advantage that flexibility effect transistor has bendable folding endurance, convenience due to it, get more and more people's extensive concerning in the potential application of the aspects such as flexibility, large area, the Electronic Paper of low cost, radio frequency trade mark and memory device.Wherein, Chinese patent application (publication number: CN104051652A) discloses a kind of based on flexible substrate film transistor.The patent application disclose and utilize evaporation on flexible substrates, the method for etching is prepared using indium gallium zinc oxide as semiconductor layer, although this patent achieves the preparation of field-effect transistor on flexible substrates, but in device fabrication process, still will be through the semiconductor technology such as over etching, photoetching, step is complicated, relatively costly, it is difficult to realize the advantage of the high-volume of flexibility electronic device, low cost.
Utility model content
Main purpose of the present utility model is to provide a kind of flexible field-effect transistor and preparation method thereof, to overcome deficiency of the prior art.
To achieve these goals, this utility model have employed following technical scheme:
This utility model embodiment provides a kind of flexible field-effect transistor, including: the source electrode being disposed in flexible substrate and being generally aligned in the same plane and drain electrode, electrically connect through semiconductor conducting channel between described source electrode and drain electrode, it is covered in the dielectric layer on described semiconductor conducting channel, and, fold and be located at the grid on described dielectric layer.
Further, the conductive material being used for being formed described source electrode, drain electrode or grid includes nano-carbon material or metal material.
Described nano-carbon material includes CNT or Graphene, but is not limited to this.
Described metal material includes Ag, Au or Al, but is not limited to this.
Further, described source electrode, drain electrode or grid use metal electrode or non-metal electrode, and described non-metal electrode includes carbon nano-tube film or oxidoreduction graphene film.
The thickness of described source electrode, drain electrode or grid is 2～50 μm.
More preferred, described semiconductor conducting channel is mainly made up of CNT or oxidoreduction Graphene.
Further, described semiconductor conducting channel uses the carbon nano-tube film or oxidoreduction graphene film being attached in described flexible substrate.
The thickness of described semiconductor conducting channel is 50nm～10 μm.
Further, include polyimides or aluminium sesquioxide for forming the material of described dielectric layer, but be not limited to this.
Further, described dielectric layer uses polyimide layer or aluminium sesquioxide layer.
The thickness of described dielectric layer is 1～50 μm.
Further, include polyimides (PI), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS) for forming the material of described flexible substrate, but be not limited to this.
Further, described flexible substrate uses polyimide film, polyethylene terephthalate film or PDMS membrane.
More preferred, the thickness of described flexible substrate is 5-50 μm.
This utility model embodiment provides a kind of method preparing described flexible field-effect transistor, comprising:
A, hard substrates formed flexible substrate；
B, the preparation spaced source electrode of formation and drain electrode in described flexible substrate；
C, described source electrode and drain electrode between prepare semiconductor conducting channel, make described source electrode and drain electrode electrical connection；
D, on described semiconductor conducting channel, prepare dielectric layer；
E, on described dielectric layer, prepare grid.
In some embodiments, described preparation method includes: use micro electro mechanical system (MEMS) technology or printed electronics to prepare described source electrode, drain electrode, dielectric layer or grid.Preferably employ micro electro mechanical system (MEMS) technology and make described source electrode, drain electrode or grid.
In some embodiments, described preparation method includes: use printed electronics to prepare semiconductor conducting channel.
Further, described printed electronics includes that air-flow sprays print technique, InkJet printing processes or gravure printing technique, but is not limited to this.
More preferred, the conductive ink that described printed electronics uses is carbon nanotube conducting ink, and the preparation method of described carbon nanotube conducting ink includes:
(I) utilize acid solution that carbon nano-tube material carries out remove impurity process, remove the metal impurities in carbon nano-tube material；
(II) utilize ultrasonic, clean, centrifuging process step, carbon nano-tube material is purified, dispersion process；
(III) carbon nano-tube material after purification is carried out sucking filtration process, it is thus achieved that purified mistake carbon nano-tube material；
(IV) take carbon nano-tube material after purification and dispersant, carry out ultrasonic, centrifugal treating, take the supernatant after being centrifuged, be carbon nanotube conducting ink.
More preferred, the conductive ink that described printed electronics uses is oxidoreduction graphene conductive ink, and the preparation method of described oxidoreduction graphene conductive ink includes:
(I) oxidoreduction Graphene is provided；
(II) utilize deionized water that oxidoreduction Graphene is disperseed, centrifugal treating, add organic solvent afterwards, preparation is formed and is suitable for the oxidoreduction Graphene ink that aerosol prints, and described organic solvent includes ethanol.
In some embodiments, described preparation method, it is characterised in that also include:
F, utilize scribing, stripping mode, it is thus achieved that described flexible field-effect transistor.
This utility model prepares the electrode of field-effect transistor owing to have employed micro electro mechanical system (MEMS) technology, it is ensured that the precision of electrode.Meanwhile, this utility model uses printed electronics can realize effective structure of carbon nanomaterial, and avoids the damage to substrate of the high growth temperature carbon nanomaterial；Additionally, this utility model utilizes micro electro mechanical system (MEMS) technology or printed electronics to realize the deposition of dielectric layer, add motility prepared by device.
Compared with prior art, this utility model at least has the advantages that by using MEMS process technology, printed electronics to combine with nano-carbon material etc., preparing on flexible substrates and have field-effect transistor of good performance, its simple in construction, technique are flexible, cost is relatively low, be suitable to production in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of flexible field-effect transistor in this utility model one exemplary embodiments.
Detailed description of the invention
An aspect of the present utility model provides a kind of flexible field-effect transistor, the substrate arranged including lamination successively, source electrode, drain electrode and conducting channel, dielectric layer and grid.
Wherein, the material of described substrate, source electrode, drain electrode, conducting channel, dielectric layer, grid etc. can be as it was noted above, here is omitted.
Another aspect of the present utility model provides a kind of method preparing the most flexible field-effect transistor, including step:
(I) go up one layer of Organic substance of spin coating in hard substrates (such as glass, silicon etc.) and carry out solidifying as flexible substrate；
(II) micro electro mechanical system (MEMS) technology or printed electronic technique is utilized to prepare source electrode and the drain electrode of field-effect transistor on flexible substrates；
(III) printed electronics technique is utilized to prepare carbon nanomaterial conducting channel；
(IV) application micro electro mechanical system (MEMS) technology or printed electronic technique prepare dielectric layer；
(V) application micro electro mechanical system (MEMS) technology or printed electronic technique prepare grid；
(VI) from hard substrates, the flexible material of first step spin coating is peeled off, it is thus achieved that described flexible field-effect transistor.
Preferably, described making technology of MEMS include photoetching, sputter, be deposited with, the step such as etching.
Preferably, described printed electronic technique sprays print technique, InkJet printing processes or gravure printing technique selected from air-flow.
Preferably, the method also comprises the steps, that is: utilize oxygen plasma technique or solution activation method that described flexible substrate is processed, the adhesion of the material layer (such as source, drain electrode and conducting channel) to increase described flexible substrate and be positioned in this flexible substrate.
Preferably, this preparation method also includes the step preparing carbon nanomaterial printing ink, first, utilizes chemical solution that carbon nanometer is carried out remove impurity process, then utilize ultrasonic, clean, centrifuging process step, carbon nanomaterial is purified process；Followed by dispersant, carbon nanomaterial after purification is disperseed, form conductive ink.
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing embodiment, this utility model is described further.
Embodiment 1 refers to shown in Fig. 1, and the flexible field-effect transistor that the present embodiment provides includes the flexible substrate 1 that lamination is arranged successively, source electrode 2, drain electrode 3 and semiconductor conducting channel 4, dielectric layer 5 and grid 6.
Wherein, the material of flexible substrate 1 is polyimides (Polyimide, PI).
Wherein, source electrode and drain material are Ag.
Wherein, semiconductor conducting channel is SWCN.
Wherein, dielectric layer material is polyimides.
Wherein, grid material is Ag.
The preparation method of as above flexible field-effect transistor is described below, and the method comprising the steps of:
(1) matrix material of the flexible field-effect transistor of preparation in hard substrates.Specifically, first glass substrate is carried out, removes granule and the pollutant on surface；Then utilize spin coating proceeding figure at surface of silicon spin coating one strata acid imide, program-control baking oven carries out cured, it is thus achieved that thickness is at the flexible polyimide thin film 1 of 5-50 micron level；
(2) on the Kapton substrate prepared, utilize inkjet technology to combine nanometer Ag conductive ink, print source electrode 2 and the drain electrode 3 of flexible field-effect transistor；
(3) printed electronic technique is utilized to prepare the semiconductor conducting channel 4 of CNT material between described source electrode 2 and drain electrode 3.First carbon nanotube conducting ink is prepared, including:
I, utilize the chemical solutions such as sulphuric acid to carry out remove impurity process, remove the metal impurities in CNT；
II, utilize ultrasonic, clean, centrifuging process step, nano level carbon nano-tube material is purified, dispersion process；
III, CNT after purification is carried out sucking filtration process, extract and there is highly purified semi-conductor type single-walled carbon nano tube；
IV, then take appropriate purification after SWCN combine SDS (sodium lauryl sulphate) dispersant, carry out noise, centrifugal treating；
V, take centrifugal after the supernatant, be carbon nanotube conducting ink.Then by prepare carbon nanotube conducting ink, utilize InkJet printing processes, source electrode 2 and drain electrode 3 between formed SWCN conducting channel 4.
(4) utilize printed electronic technique, carbon nanotube conducting raceway groove is prepared dielectric layer 5.First take appropriate polyimide solution, be diluted by ethanol, it is thus achieved that printable polyimide solution；Then utilize air-flow to spray printing technique, the polyimide solution after dilution is printed upon on carbon nanotube conducting raceway groove, it is thus achieved that the dielectric layer 5 of polyimides material.
(5) on the polymide dielectric layer prepared, utilize inkjet technology to combine nanometer Ag conductive ink, print the grid 6 of flexible field-effect transistor.
(6) then utilize scribing, lift-off technology, flexibility field-effect transistor is discharged from glass substrate, it is thus achieved that the flexible field-effect transistor of polyimide substrate.
Embodiment 2 refers to shown in Fig. 1, and the flexible field-effect transistor that the present embodiment provides includes the flexible substrate 1 that lamination is arranged successively, source electrode 2, drain electrode 3 and semiconductor conducting channel 4, dielectric layer 5 and grid 6.
Wherein, the material of flexible substrate 1 is polydimethylsiloxane (PDMS).
Wherein, source electrode and drain material are Au.
Wherein, semiconductor conducting channel is oxidoreduction Graphene.
Wherein, dielectric layer material is aluminium sesquioxide.
Wherein, grid material is Au.
The preparation method of as above flexible field-effect transistor is described below, and the method comprising the steps of:
(1) matrix material of the flexible field-effect transistor of preparation in hard substrates.Specifically, first glass substrate is carried out, removes granule and the pollutant on surface；Then utilize spin coating proceeding figure at one layer of PDMS of surface of silicon spin coating, program-control baking oven carries out cured, it is thus achieved that thickness is at the flexible PDMS film 1 of 5-50 micron level；
(2) on the PDMS film substrate prepared, utilize the techniques such as the photoetching in MEMS process technology, sputtering, PDMS film is formed source electrode 2 and the drain electrode 3 of the flexible field-effect transistor of Au material；
(3) printed electronic technique is utilized to prepare the semiconductor conducting channel 4 of Graphene material between described source electrode 2 and drain electrode 3.First prepare graphene conductive ink, after step (I) concentrated sulphuric acid, potassium permanganate and the oxidized reaction of powdered graphite, obtain the graphite flake of brown, graphene layers can be stirred vigorously stripping for graphene oxide through ultrasonic or high shear；(II) utilize deionized water that graphene oxide is disperseed, be centrifuged, control certain viscosity, and combine the organic solvents such as ethanol, prepare the high-quality graphene oxide aqueous solution being suitable for printing with aerosol.Then utilize aerosol to print, between source electrode 2 and drain electrode 3, print the graphene oxide solution of favorable dispersibility.Finally utilize gas phase HI that graphene oxide is reduced, it is thus achieved that the conducting channel 4 of oxidoreduction Graphene material.
(4) utilize MEMS technique, oxidoreduction graphene conductive raceway groove prepares dielectric layer 5.Utilize the photoetching development technology in micro electro mechanical system (MEMS) technology, be initially formed the graphical of dielectric layer structure, then utilize gas phase deposition technology, conducting channel deposits aluminium sesquioxide material, finally removes unnecessary aluminium sesquioxide material, it is thus achieved that dielectric layer 5.
(5) on the aluminium sesquioxide dielectric layer prepared, utilize the photoetching in micro electro mechanical system (MEMS) technology, develop, the technique such as sputtering, prepare the flexible field effect transistor gate 6 of Au material；
(6) then utilize scribing, lift-off technology, flexibility field-effect transistor is discharged from glass substrate, it is thus achieved that the flexible field-effect transistor of PDMS substrate.
Embodiment 3 refers to shown in Fig. 1, and the flexible field-effect transistor that the present embodiment provides includes the flexible substrate 1 that lamination is arranged successively, source electrode 2, drain electrode 3 and semiconductor conducting channel 4, dielectric layer 5 and grid 6.
Wherein, the material of flexible substrate 1 is polyethylene terephthalate (PET).
Wherein, source electrode and drain material are multi-walled carbon nano-tubes.
Wherein, semiconductor conducting channel is SWCN.
Wherein, dielectric layer material is polyimides.
Wherein, grid material is multi-walled carbon nano-tubes.
The preparation method of as above flexible field-effect transistor is described below, and the method comprising the steps of:
(1) the multi-walled carbon nano-tubes conducting solution that electric conductivity is good is prepared, including:
I, utilize the chemical solutions such as sulphuric acid to carry out remove impurity process, remove the metal impurities in CNT；
II, utilize ultrasonic, clean, centrifuging process step, nano level carbon nano-tube material is purified, dispersion process；
III, CNT after purification is carried out sucking filtration process, extract highly purified multi-walled carbon nano-tubes；
IV, then take appropriate purification after SWCN combine SDS dispersant, carry out noise, centrifugal treating, prepare multi-walled carbon nano-tubes conducting solution；
(2) on the PET film substrate 1 prepared, utilize the air-flow in printed electronics to spray printing apparatus, PET film is formed source electrode 2 and the drain electrode 3 of the flexible field-effect transistor of multi-walled carbon nano-tubes material；
(3) printed electronic technique is utilized to prepare the semiconductor conducting channel 4 of CNT material between described source electrode 2 and drain electrode 3.First prepare carbon nanotube conducting ink, utilize the chemical solutions such as sulphuric acid to carry out remove impurity process including step (I), remove the metal impurities in CNT；(II) utilize ultrasonic, clean, centrifuging process step, nano level carbon nano-tube material is purified, dispersion process；(III) CNT after purification is carried out sucking filtration process, extract and there is highly purified semi-conductor type single-walled carbon nano tube；(IV) SWCN after then taking appropriate purification combines SDS dispersant, carries out noise, centrifugal treating；(V) take the supernatant after being centrifuged, be carbon nanotube conducting ink.Then by prepare carbon nanotube conducting ink, utilize air-flow to spray print technique, source electrode 2 and drain electrode 3 between formed SWCN conducting channel 4.
(4) utilize printed electronic technique, carbon nanotube conducting raceway groove is prepared dielectric layer 5.First take appropriate polyimide solution, be diluted by ethanol, it is thus achieved that printable polyimide solution；Then utilize air-flow to spray printing technique, the polyimide solution after dilution is printed upon on carbon nanotube conducting raceway groove, it is thus achieved that the dielectric layer 5 of polyimides material.
(5) on the polymide dielectric layer prepared, utilize air-flow spray printing technique to combine multi-walled carbon nano-tubes conductive ink, print the grid 6 of flexible field-effect transistor；
Wherein, aforesaid printed electronic technique can be that air-flow sprays print technique, InkJet printing processes or gravure printing technique.
The above is only detailed description of the invention of the present utility model; it should be pointed out that, for those skilled in the art, on the premise of without departing from this utility model principle; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection domain of the present utility model.
Claims (8)
1. a flexible field-effect transistor, it is characterised in that including: the source electrode being disposed in flexible substrate and being generally aligned in the same plane and drain electrode, electrically connects through semiconductor conducting channel between described source electrode and drain electrode；It is covered in the dielectric layer on described semiconductor conducting channel；And, fold and be located at the grid on described dielectric layer；Wherein, described source electrode, drain electrode or grid use metal electrode or non-metal electrode, and described non-metal electrode includes carbon nano-tube film or oxidoreduction graphene film.
Flexible field-effect transistor the most according to claim 1, it is characterised in that: the thickness of described source electrode, drain electrode or grid is 2～50 μm.
Flexible field-effect transistor the most according to claim 1, it is characterised in that: described semiconductor conducting channel uses carbon nanotube layer or oxidoreduction graphene layer.
4. according to the flexible field-effect transistor described in claim 1 or 3, it is characterised in that: the thickness of described semiconductor conducting channel is 50nm～10 μm.
Flexible field-effect transistor the most according to claim 1, it is characterised in that: described dielectric layer uses polyimide layer or aluminium sesquioxide layer.
Flexible field-effect transistor the most according to claim 5, it is characterised in that: the thickness of described dielectric layer is 1～50 μm.
Flexible field-effect transistor the most according to claim 1, it is characterised in that: described flexible substrate uses polyimide film, polyethylene terephthalate film or PDMS membrane.
8. according to the flexible field-effect transistor described in claim 1 or 7, it is characterised in that: the thickness of described flexible substrate is 5～50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201620008969.8U CN205452360U (en) | 2016-01-05 | 2016-01-05 | Flexible field effect transistor |
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| CN201620008969.8U CN205452360U (en) | 2016-01-05 | 2016-01-05 | Flexible field effect transistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654013A (en) * | 2016-12-22 | 2017-05-10 | 华中科技大学 | Preparation method and application of thin film transistor fine mask plate |
| CN111785682A (en) * | 2020-07-08 | 2020-10-16 | 山西大学 | Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit |
-
2016
- 2016-01-05 CN CN201620008969.8U patent/CN205452360U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654013A (en) * | 2016-12-22 | 2017-05-10 | 华中科技大学 | Preparation method and application of thin film transistor fine mask plate |
| CN106654013B (en) * | 2016-12-22 | 2019-01-15 | 华中科技大学 | A kind of preparation method and applications of the fine mask plate of thin film transistor (TFT) |
| CN111785682A (en) * | 2020-07-08 | 2020-10-16 | 山西大学 | Method for 3D printing of all-carbon three-dimensional multilayer integrated circuit |
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