CN111640805A - N-PERT double-sided battery structure based on silicon nitride laminated film - Google Patents
N-PERT double-sided battery structure based on silicon nitride laminated film Download PDFInfo
- Publication number
- CN111640805A CN111640805A CN202010486297.2A CN202010486297A CN111640805A CN 111640805 A CN111640805 A CN 111640805A CN 202010486297 A CN202010486297 A CN 202010486297A CN 111640805 A CN111640805 A CN 111640805A
- Authority
- CN
- China
- Prior art keywords
- sinx
- film
- silicon nitride
- pert
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 48
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 43
- 239000004038 photonic crystal Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000005468 ion implantation Methods 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 238000007639 printing Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 3
- 230000001795 light effect Effects 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention aims to disclose a silicon nitride laminated film-based N-PERT double-sided battery structure which is prepared by sequentially performing texturing, boron diffusion, etching, phosphorus ion implantation, RCA cleaning, annealing, back-side SiNx film deposition, BOE cleaning, front-side Al2O3 plating, front-side SiNx film plating, printing and sintering on a silicon wafer; the SiNx thin film is a laminated film structure formed by periodically arranging SiNx thin films with two different refractive indexes ni (i is 1,2) and different thicknesses xi (i is 1,2), and the periodically arranged SiNx films form photonic crystals; compared with the prior art, the SiNx laminated structure is deposited by a PECVD method, long-wavelength light penetrating through the cell can be reflected back to the interior of the cell, the light utilization rate of the cell is improved, and the photoelectric conversion efficiency is improved; the light absorption capacity of the cell can be enhanced through the slow light effect based on the photonic crystal; the method is particularly suitable for a thin-slice battery, so that the battery efficiency is not influenced by the reduction of the thickness of the silicon slice; the method can be realized only by changing the preparation process of the SiNx film without purchasing new equipment.
Description
Technical Field
The invention relates to a double-sided battery structure, in particular to an N-PERT double-sided battery structure based on a silicon nitride laminated film.
Background
With the continuous push of the internet at a flat price, the N-type high-efficiency photovoltaic cell represented by N-PERT is concerned by researchers and enterprises.
The N-PERT battery has the advantages of long minority carrier lifetime, larger efficiency improvement space and the like, and can be well butted with the TOPCon technology.
In general, the conventional P-type solar cell has poor absorption capability for long waves, so that long-wave light directly penetrates through the cell and cannot be effectively absorbed, thereby reducing the light capture rate and the conversion efficiency of the solar cell. In addition, with the continuous promotion of flat-price internet access, the reduction of the thickness of the silicon wafer is the most direct and effective measure for reducing the cost of the solar cell, but the reduction of the thickness of the silicon wafer can make the absorption loss of long waves more obvious, and the density of short-circuit current is reduced, thereby influencing the improvement of the efficiency of the N-type solar cell. Therefore, a passivation film capable of regulating and controlling incident long-wavelength light is deposited on the back of the crystalline silicon cell, and the method has important significance for improving the light utilization rate of the cell and further improving the photoelectric conversion efficiency of the cell.
Therefore, there is a particular need for an N-PERT bifacial cell structure based on a silicon nitride laminate film to solve the above-mentioned existing problems.
Disclosure of Invention
The invention aims to provide an N-PERT double-sided battery structure based on a silicon nitride laminated film, aiming at the defects of the prior art, the back SiNx laminated film is adopted, the reflectivity of back long-wavelength light is increased, the light absorption rate is effectively improved, the short-circuit current is obviously increased, and the conversion efficiency of the battery is improved.
The technical problem solved by the invention can be realized by adopting the following technical scheme:
a N-PERT double-sided battery structure based on a silicon nitride laminated film is characterized in that a silicon wafer is sequentially subjected to texturing, boron diffusion, etching, phosphorus ion implantation, RCA cleaning, annealing, back surface deposition of a SiNx film, BOE cleaning, front surface Al2O3 plating, front surface SiNx film plating, printing and sintering to prepare the battery structure; the SiNx thin film is a stacked film structure formed by periodically arranging SiNx thin films with two different refractive indexes ni (i ═ 1,2) and different thicknesses xi (i ═ 1,2), and the periodically arranged SiNx thin films form photonic crystals.
In one embodiment of the present invention, the thickness x1 of the first SiNx film is 10-100nm, and the refractive index n1 is 1.5-1.8.
In one embodiment of the present invention, the x2 of the second SiNx film is 10-100nm, and the refractive index n2 is 1.9-2.2.
In one embodiment of the present invention, the flow rate of SiH4 for preparing the first SiNx film is 400-500sccm, the flow rate of NH3 is 3000-4000sccm, and the deposition time is 100-600 s.
In one embodiment of the present invention, the flow rate of SiH4, NH3 and deposition time of the second SiNx film are respectively 600-800sccm, 2000-4000sccm and 100-600s, respectively.
Compared with the prior art, the N-PERT double-sided battery structure based on the silicon nitride laminated film has the advantages that the SiNx laminated structure is deposited by a PECVD method, light penetrating through the battery can be reflected back to the inside of the battery, the light utilization rate of the battery is improved, and the photoelectric conversion efficiency is improved; the light absorption capacity of the cell can be enhanced through the slow light effect based on the photonic crystal; the method is particularly suitable for a thin-slice battery, so that the battery efficiency is not influenced by the reduction of the thickness of the silicon slice; the method can be realized by only changing the preparation process of the SiNx film without purchasing new equipment, and the aim of the invention is fulfilled.
The features of the present invention will be apparent from the accompanying drawings and from the detailed description of the preferred embodiments which follows.
Drawings
FIG. 1 is a schematic structural diagram of a stacked silicon nitride film based N-PERT double-sided battery structure according to the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Examples
As shown in fig. 1, the N-PERT double-sided battery structure based on the silicon nitride laminated film of the present invention is prepared by sequentially performing texturing, boron diffusion, etching, phosphorus ion implantation, RCA cleaning, annealing, SiNx film deposition on the back side, BOE cleaning, Al2O3 plating on the front side, SiNx film plating on the front side, printing and sintering on a silicon wafer; the SiNx thin film is a stacked film structure formed by periodically arranging SiNx thin films with two different refractive indexes ni (i ═ 1,2) and different thicknesses xi (i ═ 1,2), and the periodically arranged SiNx thin films form photonic crystals.
Photonic crystals: the photonic crystal has a photonic band gap structure with dielectric constant periodically changing along with space, has a certain regulation and control effect on light, and when the frequency of incident light is matched with the photonic band gap, the incident light is totally reflected and cannot penetrate through the photonic crystal.
SiNx laminated film: the photonic crystal is formed by periodically arranging SiNx films with two different refractive indexes ni (i is 1,2) and different thicknesses xi (i is 1,2), wherein the periodically arranged SiNx films form a photonic crystal. The photonic band gap of the photonic crystal film is changed by adjusting the refractive index ni (i is 1,2) and the thickness xi (i is 1,2) of the two SiNx thin films, so that the purpose of reflecting long-wavelength light is achieved, and the light utilization rate of the cell is improved.
The first SiNx film has a refractive index of n1 and a thickness of x1, and the second SiNx film has a refractive index of n2 and a thickness of x 2.
In this embodiment, the thickness x1 of the first SiNx film is 10-100nm, and the refractive index n1 is 1.5-1.8.
The second SiNx film has x2 of 10-100nm and refractive index n2 of 1.9-2.2.
In this embodiment, the flow rate of SiH4 for preparing the first SiNx film is 400-500sccm, the flow rate of NH3 is 3000-4000sccm, and the deposition time is 100-600 s.
The flow rate of SiH4 for preparing the second SiNx film is 600-800sccm, the flow rate of NH3 is 2000-4000sccm, and the deposition time is 100-600 s.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined by the appended claims and their equivalents.
Claims (5)
1. A N-PERT double-sided battery structure based on a silicon nitride laminated film is characterized in that a silicon wafer is sequentially subjected to texturing, boron diffusion, etching, phosphorus ion implantation, RCA cleaning, annealing, back surface deposition of a SiNx film, BOE cleaning, front surface Al2O3 plating, front surface SiNx film plating, printing and sintering to prepare the battery structure; the SiNx thin film is a stacked film structure formed by periodically arranging SiNx thin films with two different refractive indexes ni (i ═ 1,2) and different thicknesses xi (i ═ 1,2), and the periodically arranged SiNx thin films form photonic crystals.
2. The stacked silicon nitride film-based N-PERT bifacial cell structure of claim 1, wherein the first SiNx film has a thickness x1 of 10 to 100nm and a refractive index N1 of 1.5 to 1.8.
3. The stacked silicon nitride film-based N-PERT bifacial cell structure of claim 1, wherein said second SiNx film has x2 ranging from 10 nm to 100nm and N2 ranging from 1.9 to 2.2.
4. The laminated silicon nitride film-based N-PERT double-sided cell structure of claim 1, wherein the flow rate of SiH4 for preparing the first SiNx film is 400-4000 sccm, the flow rate of NH3 is 3000-4000sccm, and the deposition time is 100-600 s.
5. The laminated silicon nitride film-based N-PERT double-sided cell structure of claim 1, wherein the flow rate of SiH4 for preparing the second SiNx film is 600-800sccm, the flow rate of NH3 is 2000-4000sccm, and the deposition time is 100-600 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010486297.2A CN111640805A (en) | 2020-06-01 | 2020-06-01 | N-PERT double-sided battery structure based on silicon nitride laminated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010486297.2A CN111640805A (en) | 2020-06-01 | 2020-06-01 | N-PERT double-sided battery structure based on silicon nitride laminated film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111640805A true CN111640805A (en) | 2020-09-08 |
Family
ID=72333312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010486297.2A Pending CN111640805A (en) | 2020-06-01 | 2020-06-01 | N-PERT double-sided battery structure based on silicon nitride laminated film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111640805A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008117880A (en) * | 2006-11-02 | 2008-05-22 | Canon Inc | Miller using photonic crystal and surface-emitting laser using the same |
| CN104157714A (en) * | 2014-07-08 | 2014-11-19 | 苏州大学 | Amorphous / microcrystalline silicon laminating solar cell |
| US20160322517A1 (en) * | 2015-04-30 | 2016-11-03 | The Board Of Trustees Of The Leland Stanford Junior University | Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces |
| CN107425086A (en) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | A kind of ion implantation makes the preparation technology of N-type PERT double-side solar cells |
| CN108231917A (en) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | A kind of PERC solar cells and preparation method thereof |
-
2020
- 2020-06-01 CN CN202010486297.2A patent/CN111640805A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008117880A (en) * | 2006-11-02 | 2008-05-22 | Canon Inc | Miller using photonic crystal and surface-emitting laser using the same |
| CN104157714A (en) * | 2014-07-08 | 2014-11-19 | 苏州大学 | Amorphous / microcrystalline silicon laminating solar cell |
| US20160322517A1 (en) * | 2015-04-30 | 2016-11-03 | The Board Of Trustees Of The Leland Stanford Junior University | Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces |
| CN107425086A (en) * | 2017-05-18 | 2017-12-01 | 阳光中科（福建）能源股份有限公司 | A kind of ion implantation makes the preparation technology of N-type PERT double-side solar cells |
| CN108231917A (en) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | A kind of PERC solar cells and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9887306B2 (en) | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application | |
| Kim et al. | Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology | |
| CN109004053B (en) | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof | |
| Guha et al. | Amorphous silicon alloy photovoltaic research—present and future | |
| Schropp et al. | Amorphous silicon, microcrystalline silicon, and thin-film polycrystalline silicon solar cells | |
| CN110957378A (en) | Back film for improving double-sided rate of P-type double-sided battery and preparation method thereof | |
| TW200950114A (en) | Tandem thin-film silicon solar cell and method for manufacturing the same | |
| JP2004335823A (en) | Photovoltaic element and method for forming it | |
| JPWO2007026480A1 (en) | Silicon-based thin film photoelectric conversion device and manufacturing method thereof | |
| CN108172658B (en) | A kind of preparation method of N-type hetero-junctions double-sided solar battery | |
| CN102569478A (en) | Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell | |
| Söderström et al. | ZnO Transparent conductive oxide for thin film silicon solar cells | |
| WO2011131000A1 (en) | Method for achieving graded lamination passivation thin film on backplane of solar battery | |
| WO2011105160A1 (en) | Thin film photoelectric conversion device and process for production thereof | |
| I Kabir et al. | A review on progress of amorphous and microcrystalline silicon thin-film solar cells | |
| CN110534614B (en) | Preparation method of P-type crystalline silicon cell | |
| CN218918901U (en) | Heterojunction solar cell | |
| CN111584665A (en) | Preparation method of back silicon nitride laminated film for laminated double-sided battery | |
| CN218602440U (en) | Novel heterojunction battery | |
| CN101894871A (en) | High-conversion rate silicon crystal and thin film compound type unijunction PIN (Positive Intrinsic-Negative) solar battery and manufacturing method thereof | |
| CN111640805A (en) | N-PERT double-sided battery structure based on silicon nitride laminated film | |
| CN215771167U (en) | Solar cell and photovoltaic module | |
| CN212874518U (en) | Solar cell | |
| Fan et al. | Factors affecting the performance of HJT Silicon Solar cells in the intrinsic and emitter layers: a review | |
| CN114582983A (en) | Heterojunction solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200908 |