CN102569478A - Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell - Google Patents
Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell Download PDFInfo
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- CN102569478A CN102569478A CN2012100417966A CN201210041796A CN102569478A CN 102569478 A CN102569478 A CN 102569478A CN 2012100417966 A CN2012100417966 A CN 2012100417966A CN 201210041796 A CN201210041796 A CN 201210041796A CN 102569478 A CN102569478 A CN 102569478A
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Abstract
The invention relates to a thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell, which comprises an N-type crystalline silicon matrix, wherein a back-side amorphous silicon intrinsic layer with the thickness of 2 to 10nm is deposited on the back side of the N-type crystalline silicon matrix; an N-type microcrystalline silicon layer with the thickness of 5 to 15nm is deposited on the passivated back side of the back-side amorphous silicon intrinsic layer; a front-side first amorphous silicon intrinsic layer with the thickness of 2 to 10nm is deposited on the front side of the N-type crystalline silicon matrix; a P-type microcrystalline silicon layer with the thickness of 10 to 20nm is deposited on the passivated front side of the front-side first amorphous silicon intrinsic layer; and an N-type amorphous silicon layer with the thickness of 5 to 15nm, a front-side second amorphous silicon intrinsic layer with the thickness of 50 to 200nm and a P-type amorphous silicon layer with the thickness of 10 to 20nm are deposited on the front side of the P-type microcrystalline silicon layer in turn. By the solar cell, the thickness of an amorphous silicon intrinsic film can be reduced, and the utilization rate of sunlight can be improved; and therefore, the efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to a kind of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell.
Background technology
Existing amorphous silicon membrane battery has the high characteristics of open circuit voltage; But the unbodied characteristics that amorphous silicon material self has, the diffusion length in its electronics and hole is little, can only obtain through the formed transference cell of internal electric field; Short circuit current is little, and the silicon-base thin-film battery whole efficiency is not high; Because need to absorb the energy of sunlight, the amorphous silicon intrinsic layer thickness is thicker, and the hundreds of nanometer is generally arranged, its intrinsic photic attenuating effect (S-W effect), electricity conversion also can further reduce.
Crystal silicon cell has perfection of lattice preferably; The light induced electron hole is to realizing that through dissufion current but less owing to its energy gap, open circuit voltage is not high; Simultaneously because the absorption coefficient of crystal silicon is little; Therefore silicon chip must have the thicker thickness could be to the abundant absorption of photon, but thickness increases, and cost also increases thereupon.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency of prior art, a kind of heterojunction lamination solar cell and preparation method thereof is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; Has N type crystalline silicon matrix; It is the back side amorphous silicon intrinsic layer of 2～10nm that described N type crystalline silicon matrix backside deposition has thickness; Depositing thickness behind the passivating back of described back side amorphous silicon intrinsic layer is the N type microcrystal silicon layer of 5～15nm; Described N type crystalline silicon matrix front deposits the front first amorphous silicon intrinsic layer that thickness is 2～10nm; Depositing thickness after the positive passivation of the described positive first amorphous silicon intrinsic layer is the P type microcrystal silicon layer of 10～20nm, and P type microcrystal silicon layer front deposits the N type amorphous silicon layer that thickness is 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm successively.
Further; It is the back side conductive film layer of 80～100nm that described N type microcrystal silicon layer backside deposition has thickness; Back side conductive film layer back up has backplate; Described P type amorphous silicon layer front deposits the front conductive film layer that thickness is 80～100nm, and conductive film layer front, front is printed with front electrode.
The preparation method of a kind of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; (1) by N type crystalline silicon matrix as substrate; Described N type crystalline silicon matrix backside deposition thickness is the back side amorphous silicon intrinsic layer of 2～10nm; (2) deposit thickness is the N type microcrystal silicon layer of 5～15nm behind the passivating back of described back side amorphous silicon intrinsic layer; (3) described N type crystalline silicon matrix front deposit thickness is the front first amorphous silicon intrinsic layer of 2～10nm; (4) deposit thickness is the P type microcrystal silicon layer of 10～20nm after the positive passivation of the described positive first amorphous silicon intrinsic layer, and (5) P type microcrystal silicon layer front deposit thickness successively is the N type amorphous silicon layer of 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm.
Further; Described N type microcrystal silicon layer backside deposition thickness is the back side conductive film layer of 80～100nm; Back side conductive film layer back up backplate, described P type amorphous silicon layer front deposit thickness is the front conductive film layer of 80～100nm, the positive printing of front conductive film layer front electrode.
The invention has the beneficial effects as follows: the thin film amorphous silicon that the present invention processes-N type crystalline silicon heterojunction lamination solar cell, can reduce the thickness of amorphous silicon intrinsic film, reduce the S-W effect of amorphous silicon battery; Reduce crystal silicon silicon sheet material thickness, reduce production costs; After forming thin film amorphous silicon and crystalline silicon laminated cell, the stack of both voltage, open circuit voltage further promotes; The energy gap of thin film amorphous silicon intrinsic layer and crystalline silicon is different, and the corresponding absorption to solar spectrum is different, can improve the utilance to sunlight, thereby promotes the efficient of solar cell.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further specified.
Fig. 1 is a structural representation of the present invention;
Embodiment
Combine accompanying drawing that the present invention is further described now.These accompanying drawings are the sketch map of simplification basic structure of the present invention only are described in a schematic way, so it only shows the formation relevant with the present invention.
As shown in Figure 1; A kind of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; Has N type crystalline silicon matrix; It is the back side amorphous silicon intrinsic layer of 2～10nm that N type crystalline silicon matrix backside deposition has thickness; Depositing thickness behind the passivating back of back side amorphous silicon intrinsic layer is the N type microcrystal silicon layer of 5～15nm; N type crystalline silicon matrix front deposits the front first amorphous silicon intrinsic layer that thickness is 2～10nm, and depositing thickness after the positive passivation of the positive first amorphous silicon intrinsic layer is the P type microcrystal silicon layer of 10～20nm, and P type microcrystal silicon layer front deposits the N type amorphous silicon layer that thickness is 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm successively.
It is the back side conductive film layer of 80～100nm that N type microcrystal silicon layer backside deposition has thickness; Back side conductive film layer back up has backplate; P type amorphous silicon layer front deposits the front conductive film layer that thickness is 80～100nm, and conductive film layer front, front is printed with front electrode.Conducting film adopts the TCO film, and front electrode and backplate are the Ag grid.
The N type crystalline silicon is C-Si (N), and the amorphous silicon intrinsic is a-Si:H (I), and N type microcrystal silicon is UC-Si (N), and P type microcrystal silicon is UC-Si (P), N type amorphous silicon a-Si:H (N), P type amorphous silicon a-Si:H (P).
The preparation method of a kind of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; (1) by N type crystalline silicon matrix as substrate; N type crystalline silicon matrix backside deposition thickness is the back side amorphous silicon intrinsic layer of 2～10nm; (2) deposit thickness is the N type microcrystal silicon layer of 5～15nm behind the passivating back of back side amorphous silicon intrinsic layer; (3) N type crystalline silicon matrix front deposit thickness is the front first amorphous silicon intrinsic layer of 2～10nm; (4) deposit thickness is the P type microcrystal silicon layer of 10～20nm after the positive passivation of the positive first amorphous silicon intrinsic layer, and (5) P type microcrystal silicon layer front deposit thickness successively is the N type amorphous silicon layer of 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm.
N type microcrystal silicon layer backside deposition thickness is the back side conductive film layer of 80～100nm, back side conductive film layer back up backplate, and P type amorphous silicon layer front deposit thickness is the front conductive film layer of 80～100nm, conductive film layer positive printing in front is positive.
The effect of back side amorphous silicon intrinsic layer, the positive first amorphous silicon intrinsic layer, the positive second amorphous silicon intrinsic layer: as absorbed layer, absorb the energy of sunlight,, reduce the S-W effect because the existence of N type crystalline silicon can reduce its thickness.
The effect of N type crystalline silicon matrix: as absorbed layer, absorption photon that can be a large amount of.
The effect of N type amorphous silicon layer, P type amorphous silicon layer forms internal electric field, and the existence of amorphous silicon doped layer can improve open circuit voltage; The internal series-connection of thin film silicon and crystal silicon cell is opened the pressure addition, further improves the open circuit voltage of battery.
Owing to exist in the time of N type amorphous silicon layer, P type amorphous silicon layer and back side amorphous silicon intrinsic layer, the positive first amorphous silicon intrinsic layer, the positive second amorphous silicon intrinsic layer; And the difference of energy gap; Therefore the difference of absorption spectrum ranges modulates the thickness of amorphous silicon layer and the thickness of N type crystalline silicon, can absorb the energy of whole solar spectrum more fully; Raising improves cell conversion efficiency to the utilization ratio of solar energy.
The thickness that film thin film amorphous silicon of the present invention-N type crystalline silicon heterojunction lamination solar cell can reduce amorphous silicon membrane reduces the S-W effect, improves the transformation efficiency of hull cell; Thickness requirement to crystalline silicon can reduce greatly, reduces the use amount to the silicon material, reduces production costs; Amorphous silicon and crystal silicon cell series connection are compared with single junction cell (thin film silicon and crystal silicon cell), can obtain higher open circuit voltage; Because the optical band gap of thin film silicon and crystalline silicon and energy gap is different; Absorption coefficient and cut-off wavelength different; Can be more fully the energy of solar spectrum be absorbed more fully, improve utilance, improve the efficient of solar cell solar energy.
Chemical formula related among the present invention has unique specific meanings in technical field of solar batteries.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.
Claims (4)
1. thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; Has N type crystalline silicon matrix; It is characterized in that: it is the back side amorphous silicon intrinsic layer of 2～10nm that described N type crystalline silicon matrix backside deposition has thickness; Depositing thickness behind the passivating back of described back side amorphous silicon intrinsic layer is the N type microcrystal silicon layer of 5～15nm; Described N type crystalline silicon matrix front deposits the front first amorphous silicon intrinsic layer that thickness is 2～10nm; Depositing thickness after the positive passivation of the described positive first amorphous silicon intrinsic layer is the P type microcrystal silicon layer of 10～20nm, and P type microcrystal silicon layer front deposits the N type amorphous silicon layer that thickness is 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm successively.
2. thin film amorphous silicon according to claim 1-N type crystalline silicon heterojunction lamination solar cell; It is characterized in that: it is the back side conductive film layer of 80～100nm that described N type microcrystal silicon layer backside deposition has thickness; Back side conductive film layer back up has backplate; Described P type amorphous silicon layer front deposits the front conductive film layer that thickness is 80～100nm, and conductive film layer front, front is printed with front electrode.
3. the preparation method of thin film amorphous silicon-N type crystalline silicon heterojunction lamination solar cell; It is characterized in that: (1) by N type crystalline silicon matrix as substrate; Described N type crystalline silicon matrix backside deposition thickness is the back side amorphous silicon intrinsic layer of 2～10nm; (2) deposit thickness is the N type microcrystal silicon layer of 5～15nm behind the passivating back of described back side amorphous silicon intrinsic layer; (3) described N type crystalline silicon matrix front deposit thickness is the front first amorphous silicon intrinsic layer of 2～10nm; (4) deposit thickness is the P type microcrystal silicon layer of 10～20nm after the positive passivation of the described positive first amorphous silicon intrinsic layer, and (5) P type microcrystal silicon layer front deposit thickness successively is the N type amorphous silicon layer of 5～15nm, the front second amorphous silicon intrinsic layer that thickness is 50～200nm, the P type amorphous silicon layer that thickness is 10～20nm.
4. the preparation method of thin film amorphous silicon according to claim 3-N type crystalline silicon heterojunction lamination solar cell; It is characterized in that: described N type microcrystal silicon layer backside deposition thickness is the back side conductive film layer of 80～100nm; Back side conductive film layer back up backplate; Described P type amorphous silicon layer front deposit thickness is the front conductive film layer of 80～100nm, the positive printing of front conductive film layer front electrode.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842635A (en) * | 2012-08-16 | 2012-12-26 | 常州天合光能有限公司 | Amorphous silicon film-P-typed crystalline silicon lamination solar battery and manufacture method thereof |
| CN102903780A (en) * | 2012-09-27 | 2013-01-30 | 奥特斯维能源（太仓）有限公司 | Crystalline silicon/amorphous silicon two-section two-sided battery and production method thereof |
| CN103066208A (en) * | 2012-12-28 | 2013-04-24 | 浙江金贝能源科技有限公司 | N type silicon substrate and organic crystal double-face heterojunction solar battery type |
| CN103117331A (en) * | 2013-01-31 | 2013-05-22 | 英利集团有限公司 | N-type heterojunction solar cell and manufacturing method thereof |
| CN103280496A (en) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon heterojunction/microcrystalline silicon thin film laminated photovoltaic cell |
| CN104600157A (en) * | 2015-01-13 | 2015-05-06 | 福建铂阳精工设备有限公司 | Manufacturing method of hetero-junction solar cell and hetero-junction solar cell |
| CN104733559A (en) * | 2013-12-18 | 2015-06-24 | 宋太伟 | Multilevel extension PN junction thin film solar cell |
| CN105655433A (en) * | 2016-04-13 | 2016-06-08 | 黄广明 | Crystalline silicon/amorphous silicon two-section solar cell and production method thereof |
| CN106784110A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of laminate solar photovoltaic cell based on low price crystal silicon chip |
| JP2017525136A (en) * | 2014-06-27 | 2017-08-31 | トータル マーケティング サービスィズ | Passivation of the light-receiving surface of solar cells using crystalline silicon |
| RU2667689C2 (en) * | 2016-12-28 | 2018-09-24 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Method for producing nanocrystalline silicon/amorphous hydrogenated silicon heterojunction for solar elements and solar element with such heterojunction |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1755949A (en) * | 2004-09-29 | 2006-04-05 | 三洋电机株式会社 | Photovoltaic device |
| CN101777593A (en) * | 2010-01-20 | 2010-07-14 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
| CN201667340U (en) * | 2009-07-01 | 2010-12-08 | 保定天威集团有限公司 | Laminated solar battery |
-
2012
- 2012-02-23 CN CN2012100417966A patent/CN102569478A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1755949A (en) * | 2004-09-29 | 2006-04-05 | 三洋电机株式会社 | Photovoltaic device |
| CN201667340U (en) * | 2009-07-01 | 2010-12-08 | 保定天威集团有限公司 | Laminated solar battery |
| CN101777593A (en) * | 2010-01-20 | 2010-07-14 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842635A (en) * | 2012-08-16 | 2012-12-26 | 常州天合光能有限公司 | Amorphous silicon film-P-typed crystalline silicon lamination solar battery and manufacture method thereof |
| CN102903780A (en) * | 2012-09-27 | 2013-01-30 | 奥特斯维能源（太仓）有限公司 | Crystalline silicon/amorphous silicon two-section two-sided battery and production method thereof |
| CN103066208B (en) * | 2012-12-28 | 2015-11-25 | 浙江金贝能源科技有限公司 | A kind of N-type silicon substrate adds the two-sided heterojunction solar battery sheet of organic crystal |
| CN103066208A (en) * | 2012-12-28 | 2013-04-24 | 浙江金贝能源科技有限公司 | N type silicon substrate and organic crystal double-face heterojunction solar battery type |
| CN103117331A (en) * | 2013-01-31 | 2013-05-22 | 英利集团有限公司 | N-type heterojunction solar cell and manufacturing method thereof |
| CN103117331B (en) * | 2013-01-31 | 2016-02-10 | 英利集团有限公司 | A kind of N-type heterojunction solar cell and preparation method thereof |
| CN103280496A (en) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon heterojunction/microcrystalline silicon thin film laminated photovoltaic cell |
| CN104733559A (en) * | 2013-12-18 | 2015-06-24 | 宋太伟 | Multilevel extension PN junction thin film solar cell |
| JP2017525136A (en) * | 2014-06-27 | 2017-08-31 | トータル マーケティング サービスィズ | Passivation of the light-receiving surface of solar cells using crystalline silicon |
| CN104600157A (en) * | 2015-01-13 | 2015-05-06 | 福建铂阳精工设备有限公司 | Manufacturing method of hetero-junction solar cell and hetero-junction solar cell |
| CN105655433A (en) * | 2016-04-13 | 2016-06-08 | 黄广明 | Crystalline silicon/amorphous silicon two-section solar cell and production method thereof |
| CN106784110A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of laminate solar photovoltaic cell based on low price crystal silicon chip |
| RU2667689C2 (en) * | 2016-12-28 | 2018-09-24 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Method for producing nanocrystalline silicon/amorphous hydrogenated silicon heterojunction for solar elements and solar element with such heterojunction |
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Application publication date: 20120711 |