CN215771167U - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN215771167U CN215771167U CN202121629225.5U CN202121629225U CN215771167U CN 215771167 U CN215771167 U CN 215771167U CN 202121629225 U CN202121629225 U CN 202121629225U CN 215771167 U CN215771167 U CN 215771167U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 52
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000002131 composite material Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000007423 decrease Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000011159 matrix material Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
The solar cell provided by the utility model comprises a front electrode, a doped diffusion layer, a matrix silicon, a composite passivation layer and a back electrode in sequence from the front to the back; the front electrode is electrically connected with the doped diffusion layer; the diffusion doping layer and the substrate silicon form a PN junction; the composite passivation layer comprises a silicon oxynitride layer and a plurality of silicon nitride layers which are stacked from inside to outside; the back electrode is electrically connected to the base silicon through the composite passivation layer. The utility model ensures that the back surface of the cell has a smaller interface state and good hydrogen passivation characteristic, avoids using an aluminum oxide layer with higher equipment requirement as a passivation layer, greatly reduces the power consumption cost of the cell, improves the production efficiency of the cell, and simultaneously enables long-wavelength sunlight to be subjected to multi-section internal reflection by arranging the plurality of silicon nitride layers, thereby greatly improving the photoelectric conversion efficiency of the cell. The utility model also provides a photovoltaic module with the advantages.
Description
Technical Field
The utility model relates to the field of photovoltaic power generation, in particular to a solar cell and a photovoltaic module.
Background
As one of the fastest-developing fields in solar photoelectric utilization, the technical development of crystalline silicon cells attracts attention, but the limitation of the electricity consumption cost of crystalline silicon cells leads to insufficient market competition, the method for solving the problem is technically innovative at the bottom, and people continuously develop and develop cell structures with more potential and optimize process procedures, so that the benefit of crystalline silicon cells is improved.
The double-sided PERC cell is particularly concerned by the industry due to its excellent photoelectric conversion rate, and in order to ensure a small interface state of the back, internal reflection of long-wavelength light and H passivation requirements in the current PERC cell manufacturing process, the back is generally processed by adopting a combined structure of aluminum oxide and silicon nitride, but at present, in order to achieve a good aluminum oxide layer setting effect, an Atomic Layer Deposition (ALD) technology is generally adopted for setting, but the atomic layer deposition equipment is high in cost and low in execution efficiency, and the production efficiency of the cell is reduced while the power consumption cost of the cell is increased.
Therefore, how to improve the production efficiency of the battery piece and reduce the production cost while ensuring the back passivation effect is a problem to be solved urgently by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a solar cell and a photovoltaic module, and aims to solve the problems of high requirements and high cost of a solar cell passivation process in the prior art.
In order to solve the technical problem, the utility model provides a solar cell, which sequentially comprises a front electrode, a doped diffusion layer, a matrix silicon, a composite passivation layer and a back electrode from the front to the back;
the front electrode is electrically connected with the doped diffusion layer;
the doped diffusion layer and the substrate silicon form a PN junction;
the composite passivation layer comprises a silicon oxynitride layer and a plurality of silicon nitride layers which are stacked from inside to outside;
the back electrode is electrically connected to the base silicon through the composite passivation layer.
Preferably, in the solar cell, the silicon oxynitride layer includes a plurality of silicon oxynitride sublayers stacked on each other.
Preferably, in the solar cell, the refractive indexes of the silicon oxynitride sublayers gradually decrease from inside to outside.
Preferably, in the solar cell, the refractive index of the silicon oxynitride layer is greater than that of the silicon nitride layer.
Preferably, in the solar cell, the silicon oxynitride layer is an epitaxial layer with a refractive index ranging from 1.6 to 2.5.
Preferably, in the solar cell, the refractive index of the plurality of silicon nitride layers gradually decreases from inside to outside.
Preferably, in the solar cell, the thickness of the silicon oxynitride layer ranges from 30 nm to 120 nm, inclusive.
Preferably, in the solar cell, the silicon nitride layer is an epitaxial layer with a refractive index ranging from 1.9 to 2.4.
Preferably, in the solar cell, the front surface of the solar cell is a textured surface.
A photovoltaic module comprises the solar cell piece.
The solar cell provided by the utility model comprises a front electrode, a doped diffusion layer, a matrix silicon, a composite passivation layer and a back electrode in sequence from the front to the back; the front electrode is electrically connected with the doped diffusion layer; the doped diffusion layer and the substrate silicon form a PN junction; the composite passivation layer comprises a silicon oxynitride layer and a plurality of silicon nitride layers which are stacked from inside to outside; the back electrode is electrically connected to the base silicon through the composite passivation layer. The utility model ensures that the back surface of the cell has a smaller interface state and good hydrogen passivation characteristic, avoids using an aluminum oxide layer with higher equipment requirement as a passivation layer, adopts a silicon oxynitride layer with lower manufacturing process requirement, greatly reduces the power consumption cost of the cell, improves the production efficiency of the cell, and simultaneously enables the long-wave sunlight to be subjected to multi-section internal reflection by arranging a plurality of silicon nitride layers, thereby greatly improving the photoelectric conversion efficiency of the cell. The utility model also provides a photovoltaic module with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of a solar cell provided in the present invention;
fig. 2 is a schematic structural diagram of another embodiment of a solar cell provided in the present invention;
fig. 3 is a schematic structural diagram of another embodiment of a solar cell provided by the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the utility model will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the utility model, and not restrictive of the full scope of the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the utility model is to provide a solar cell, the structure schematic diagram of one specific embodiment of which is shown in fig. 1 and is called as the first specific embodiment, and the solar cell sequentially comprises a front electrode 10, a doped diffusion layer 20, matrix silicon 30, a composite passivation layer 40 and a back electrode 50 from the front to the back;
the front electrode 10 is electrically connected with the doped diffusion layer 20;
the doped diffusion layer and the base silicon 30 form a PN junction;
the composite passivation layer 40 comprises a silicon oxynitride layer 41 and a plurality of silicon nitride layers 42 which are stacked from inside to outside;
the back electrode 50 is electrically connected to the bulk silicon 30 through the composite passivation layer 40.
Preferably, the refractive index of the silicon oxynitride layer 41 gradually decreases from inside to outside; the internal scattering capability of the composite passivation layer 40 in this embodiment is enhanced.
Further, the silicon oxynitride layer 41 includes a plurality of silicon oxynitride sublayers stacked one on another, and the refractive index of the adjacent silicon oxynitride sublayers gradually decreases. On the basis of setting the refractive index gradient, the silicon oxynitride layer is further divided into a plurality of sub-layers, so that more reflecting surfaces can be provided, the internal reflection efficiency of long-wave components in sunlight in the cell is further improved, and the photoelectric conversion efficiency of the cell is improved.
The silicon oxynitride layer 41 or the silicon nitride layer 42 is further subdivided into a plurality of sub-layers with different refractive indexes, which can be further adjusted according to the specific use environment and design purpose of the solar cell, as will be seen in detail below.
As a specific embodiment, the silicon oxynitride layer 41 is an epitaxial layer with a refractive index ranging from 1.6 to 2.5, and the refractive index of the silicon oxynitride layer may be any one of 1.60, 2.98 or 2.50; further, the thickness of the silicon oxynitride layer 41 ranges from 30 nm to 120 nm, inclusive, such as any one of 30.0 nm, 113.5 nm, or 120.0 nm.
Additionally, the silicon nitride layer 42 is an epitaxial layer having a refractive index ranging between 1.9 and 2.4, and the refractive index of the silicon nitride layer 42 may be any one of 1.90, 2.00, or 2.40, inclusive; still further, the silicon nitride layer 42 has a thickness in a range between 60 nanometers and 90 nanometers, inclusive, such as any of 60.0 nanometers, 75.6 nanometers, or 90.0 nanometers. Of course, the parameters of each hierarchy can be modified according to actual conditions.
The solar cell provided by the utility model comprises a front electrode 10, a doped diffusion layer 20, matrix silicon 30, a composite passivation layer 40 and a back electrode 50 in sequence from the front to the back; the front electrode 10 is electrically connected with the doped diffusion layer 20; the doped diffusion layer and the base silicon 30 form a PN junction; the composite passivation layer 40 comprises a silicon oxynitride layer 41 and a plurality of silicon nitride layers 42 which are stacked from inside to outside; the back electrode 50 is electrically connected to the bulk silicon 30 through the composite passivation layer 40. The utility model ensures that the back surface of the cell has a smaller interface state and good hydrogen passivation characteristic, avoids using an aluminum oxide layer with higher equipment requirement as a passivation layer, adopts the silicon oxynitride layer 41 with lower manufacturing process requirement, greatly reduces the power consumption cost of the cell and improves the production efficiency of the cell, and simultaneously, the multi-stage internal reflection of long-wave sunlight is carried out by arranging the multiple silicon nitride layers 42, so that the photoelectric conversion efficiency of the cell is greatly improved.
On the basis of the first specific embodiment, the silicon nitride layer is further improved to obtain a second specific embodiment, a schematic structural diagram of which is shown in fig. 2, and the solar cell sequentially comprises a front electrode 10, a doped diffusion layer 20, base silicon 30, a composite passivation layer 40 and a back electrode 50 from the front to the back;
the front electrode 10 is electrically connected with the doped diffusion layer 20;
the doped diffusion layer and the base silicon 30 form a PN junction;
the composite passivation layer 40 comprises a silicon oxynitride layer 41 and a plurality of silicon nitride layers 42 which are stacked from inside to outside;
the back electrode 50 is electrically connected to the bulk silicon 30 through the composite passivation layer 40;
the refractive index of the plurality of silicon nitride layers 42 gradually decreases from inside to outside.
In this embodiment, the refractive index relationship between the silicon nitride layers 42 is further defined, that is, the refractive index gradually decreases from the base silicon 30 to the outside, so as to further enhance the internal scattering capability of the composite passivation layer 40 in this embodiment, of course, the refractive index of the silicon oxynitride layer 41 is further made larger than the refractive index of the silicon nitride layer 42, so as to realize the gradual decrease of the refractive index of the composite passivation layer 40 from the inside to the outside, further improve the optical effect, and improve the light utilization rate of the solar cell, and of course, the silicon oxynitride layer 41 with the refractive index smaller than or equal to that of the silicon nitride layer 42 is also selected, and can be adjusted according to actual conditions.
The following provides a specific example in the production process, which includes a silicon oxynitride layer 41 and three silicon nitride sublayers, referred to as scheme 1, where each layer is specifically:
(1) after the silicon wafer is subjected to acid polishing etching, a silicon oxynitride layer 41 is manufactured by using three special gases of SiH4, NH3 and N2O, the refractive index of the silicon oxynitride layer 41 is controlled to be 2.3-2.4, and the thickness of the silicon oxynitride layer 41 is 60-100 nm;
(2) depositing a layer of silicon nitride on the silicon oxynitride layer 41 by using two special gases, namely SiH4 and NH3, wherein the refractive index of an obtained first silicon nitride sublayer is 2.3-2.2, and the thickness of the first silicon nitride sublayer is controlled to be-nm;
(3) manufacturing a second silicon nitride sublayer on the first silicon nitride sublayer by using two special gases, namely SiH4 and NH3, wherein the refractive index is 2.2-2.1, and the thickness of the second silicon nitride sublayer is controlled to be-nm;
(4) and manufacturing a third silicon nitride sublayer on the second silicon nitride sublayer by using two special gases, namely SiH4 and NH3, wherein the refractive index is 2.1-1.9, and the thickness of the third silicon nitride sublayer is controlled to be 10-nm.
In addition to the above embodiment, the silicon oxynitride layer 41 may be further provided as a plurality of silicon oxynitride sublayers having different refractive indexes, and the following embodiment is referred to as embodiment 2, and includes:
(1) after the silicon wafer is subjected to acid polishing etching, a first silicon oxynitride sublayer is manufactured by using three special gases, namely SiH4, NH3 and N2O, the refractive index of the first silicon oxynitride sublayer is controlled to be 2.3-2.4, and the thickness of the first silicon oxynitride sublayer is-80 nm;
(2) manufacturing a second silicon oxynitride sublayer on the first silicon oxynitride sublayer by using three special gases including SiH4, NH3 and N2O, wherein the refractive index of the second silicon oxynitride sublayer is controlled to be 2.2-2.3, and the thickness of the second silicon oxynitride sublayer is-nm;
(3) depositing a first silicon nitride sublayer on the second silicon oxynitride sublayer by using two special gases, namely SiH4 and NH3, wherein the refractive index of the first silicon nitride sublayer is 2.3-2.2, and the thickness of the first silicon nitride sublayer is controlled to be-nm;
(4) manufacturing a second silicon nitride sublayer on the first silicon nitride sublayer by using two special gases, namely SiH4 and NH3, wherein the refractive index is 2.2-2.1, and the thickness of the second silicon nitride sublayer is controlled to be-nm;
(5) and manufacturing a third silicon nitride sublayer on the second silicon nitride sublayer by using two special gases, namely SiH4 and NH3, wherein the refractive index is 2.1-1.9, and the thickness of the third silicon nitride sublayer is controlled to be 10-nm.
In the above embodiment, the silicon oxynitride layer 41 is also split into a plurality of sub-layers, and the plurality of silicon oxynitride sub-layers with a large refractive index can greatly improve the filling effect of the solar cell, increase FF, and improve the output power of the cell.
As another example of the production process of the single silicon nitride layer 42 and the silicon oxynitride layer 41, referred to as scheme 3, includes:
(1) after the silicon wafer is subjected to acid polishing etching, a silicon oxynitride layer 41 is manufactured by using three special gases of SiH4, NH3 and N2O, the refractive index of the silicon oxynitride layer 41 is controlled to be 2.3-2.4, and the thickness of the silicon oxynitride layer 41 is 60-100 nm;
(2) depositing a gradient silicon nitride layer 42 on the silicon oxynitride layer 41 by using two special gases, namely SiH4 and NH3, wherein the refractive index of the silicon nitride layer 42 is 2.3-1.9, and the thickness of the silicon nitride layer 42 is controlled to be 60-80 nm.
However, experimental verification has been performed for the above three schemes, and part of the data is shown in table 1:
TABLE 1 Experimental data for the protocol of the utility model
On the basis of the second specific embodiment, the silicon oxynitride layer 41 is further improved to obtain a third specific embodiment, a schematic structural diagram of which is shown in fig. 3, and the solar cell sequentially includes a front electrode 10, a doped diffusion layer 20, a matrix silicon 30, a composite passivation layer 40 and a back electrode 50 from the front to the back;
the front electrode 10 is electrically connected with the doped diffusion layer 20;
the doped diffusion layer and the base silicon 30 form a PN junction;
the composite passivation layer 40 sequentially comprises a silicon oxynitride layer 41 and a silicon nitride layer 42 from front to back;
the back electrode 50 is electrically connected to the bulk silicon 30 through the composite passivation layer 40;
the refractive index of the multiple silicon nitride layers 42 gradually decreases from inside to outside;
the front side of the solar cell is a suede.
In this embodiment, the front surface of the solar cell is defined as a textured surface, that is, the solar cell is a solar cell subjected to surface texturing, and the texturing on the light-facing surface can cause the received sunlight to be repeatedly reflected in the microstructure of the textured surface, so as to improve the absorption efficiency of the sunlight, and further improve the photoelectric conversion efficiency of the solar cell.
The specific embodiment also provides a photovoltaic module, and the photovoltaic module comprises any one of the solar cell pieces. The solar cell provided by the utility model comprises a front electrode 10, a doped diffusion layer 20, matrix silicon 30, a composite passivation layer 40 and a back electrode 50 in sequence from the front to the back; the front electrode 10 is electrically connected with the doped diffusion layer 20; the doped diffusion layer and the base silicon 30 form a PN junction; the composite passivation layer 40 sequentially comprises a silicon oxynitride layer 41 and a silicon nitride layer 42 from front to back; the back electrode 50 is electrically connected to the bulk silicon 30 through the composite passivation layer 40. The utility model ensures that the back surface of the cell has a smaller interface state and good hydrogen passivation characteristic, avoids using an aluminum oxide layer with higher equipment requirement as a passivation layer, adopts the silicon oxynitride layer 41 with lower requirement on the manufacturing process, greatly reduces the power consumption cost of the cell and improves the production efficiency of the cell.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The solar cell and the photovoltaic module provided by the utility model are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. The solar cell is characterized by comprising a front electrode, a doped diffusion layer, base silicon, a composite passivation layer and a back electrode from the front to the back in sequence;
the front electrode is electrically connected with the doped diffusion layer;
the doped diffusion layer and the substrate silicon form a PN junction;
the composite passivation layer comprises a silicon oxynitride layer and a plurality of silicon nitride layers which are stacked from inside to outside;
the back electrode is electrically connected to the base silicon through the composite passivation layer.
2. The solar cell of claim 1, wherein the silicon oxynitride layer comprises a plurality of silicon oxynitride sublayers disposed in a stack.
3. The solar cell of claim 2, wherein the refractive index of the silicon oxynitride sub-layers decreases gradually from the inside to the outside.
4. The solar cell piece of claim 1, wherein the silicon oxynitride layer has a refractive index greater than a refractive index of the silicon nitride layer.
5. The solar cell of claim 1, wherein the silicon oxynitride layer is an epitaxial layer having a refractive index ranging from 1.6 to 2.5.
6. The solar cell piece of claim 1, wherein the refractive index of the plurality of silicon nitride layers gradually decreases from inside to outside.
7. The solar cell of claim 5, wherein the silicon oxynitride layer has a thickness ranging from 30 nanometers to 120 nanometers, inclusive.
8. The solar cell sheet of claim 1, wherein the silicon nitride layer is an epitaxial layer having a refractive index ranging between 1.9 and 2.4.
9. The solar cell sheet according to any one of claims 1 to 8, wherein the front side of the solar cell sheet is textured.
10. A photovoltaic module comprising the solar cell sheet according to any one of claims 1 to 9.
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