CN111585552A - 输出驱动器电路 - Google Patents

输出驱动器电路 Download PDF

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CN111585552A
CN111585552A CN202010259966.2A CN202010259966A CN111585552A CN 111585552 A CN111585552 A CN 111585552A CN 202010259966 A CN202010259966 A CN 202010259966A CN 111585552 A CN111585552 A CN 111585552A
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三谷正宏
有山稔
村冈大介
挽地友生
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H03K19/1737—Controllable logic circuits using multiplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

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Abstract

本发明提供电路结构简单且具备过电流保护功能的输出驱动器电路。构成为：具备恒流电路和恒流镜用MOS晶体管和选择器电路，恒流镜用MOS晶体管和输出MOS晶体管构成电流镜电路，根据基于恒流镜用MOS晶体管产生的恒流的电压控制输出MOS晶体管的栅极，限制在输出MOS晶体管的源极－漏极间流动的电流。

Description

输出驱动器电路
本申请是如下发明专利申请的分案申请：
发明名称：输出驱动器电路；申请号：201380022125.8；申请日：2013年3月26日。
技术领域
本发明涉及具备过电流保护功能的输出驱动器电路。
背景技术
对现有的带过电流保护功能的输出驱动器电路进行说明。图5是示出现有的输出驱动器电路的电路图。
现有的带过电流保护功能的输出驱动器电路50，具备：与输出端子57连接的输出驱动器即NMOS晶体管55；与输出驱动器的电流路径连接的、用于监视输出电流的读出电阻58；输出参考电压的参考电压电路51；比较由读出电阻58产生的电压和参考电压的比较器52；以及根据比较器52的输出信号和输入端子53的信号控制NMOS晶体管55的栅极的NOR电路54。
在NMOS晶体管55导通的状态下，如果输出端子57与电源短路，则在NMOS晶体管55的漏极－源极间就会有大电流流过。此时，若在读出电阻58产生的电压高于参考电压，则比较器52的输出信号成为“H（高）”电平，使NMOS晶体管55截止地进行控制。由此，NMOS晶体管55的源极－漏极间的电流变得不能流动，能够防止过电流造成的IC的破坏。
此外，取代读出电阻58而连接NMOS晶体管，从而能够进行同样的保护（例如，参照专利文献1）。
现有技术文献
专利文献
专利文献1：日本特开平6－38363号公报。
发明内容
发明要解决的课题
但是，现有的带过电流保护功能的输出驱动器电路，存在这样的课题：由于需要比较器和参考电压电路，电路规模会变大。
此外，还存在这样的课题：由于对输出驱动器即NMOS晶体管的源极连接读出电阻，所以正常动作时的输出驱动器的驱动能力下降。
本发明的输出驱动器电路鉴于上述课题而完成，其目的在于提供电路结构简单且不会降低输出驱动器的驱动能力的、具备过电流保护功能的输出驱动器电路。
用于解决课题的方案
本发明为了解决上述课题，提供一种输出驱动器电路，具备：恒流电路，供给恒流；恒流镜用MOS晶体管，产生基于恒流的电压；选择器电路，被输入恒流镜用MOS晶体管的电压和第1电源端子的电压，根据输入到输出驱动器电路的输入端子的信号，输出所输入的任一个电压；以及输出MOS晶体管，其栅极与选择器电路的输出端子连接，漏极与输出驱动器电路的输出端子连接，源极与第1电源端子连接，所述输出驱动器电路是漏极开路输出的输出驱动器电路，具备根据基于恒流的电压，限制在输出MOS晶体管的源极－漏极间流动的电流的过电流保护功能。
发明效果
本发明的输出驱动器电路构成为根据电流镜电路控制输出MOS晶体管的电流，从而实现了过电流保护功能。因而，在输出MOS晶体管的源极不需要读出电阻，并且不需要比较器和参考电压电路，因此能够提供结构简单且也不会降低正常动作时的驱动能力的、带过电流保护功能的输出驱动器电路。
附图说明
图1是示出本实施方式的输出驱动器电路的电路图；
图2是示出本实施方式的输出驱动器电路的其他例的电路图；
图3是示出本实施方式的输出驱动器电路的其他例的电路图；
图4是示出本实施方式的输出驱动器电路的其他例的电路图；
图5是示出现有的输出驱动器电路的电路图。
具体实施方式
以下，参照附图，说明本发明的实施方式。
图1是示出本实施方式的输出驱动器电路的电路图。
输出驱动器电路10具备恒流电路11、恒流镜用MOS晶体管12、输入端子13、选择器电路14、和NMOS晶体管15。
NMOS晶体管15，栅极与选择器电路14的输出连接，源极与接地端子2连接，漏极与输出端子17连接。NMOS晶体管15是漏极开路形式的输出驱动器，输出端子17经由外部的上拉电阻16而与后级电路的电源端子3连接。
选择器电路14设在恒流镜用MOS晶体管12与NMOS晶体管15之间，以根据输入端子13的电压选择输出恒流镜用MOS晶体管12的输出电压和接地电压VSS的哪一个。
恒流镜用MOS晶体管12接受由与接地端子2连接的恒流电路11产生的电流，输出用于限制NMOS晶体管15的源极－漏极间电流的电压。即，恒流镜用MOS晶体管12与NMOS晶体管15构成电流镜电路。
接着，对本实施方式的输出驱动器电路10的动作进行说明。
在输入端子13的电压为“L（低）”电平的情况下，选择器电路14输出接地电压VSS。因而，NMOS晶体管15截止，输出驱动器电路10的输出端子17成为高阻抗状态。因而，输出驱动器电路10的输出端子17，上拉到将其连接到输入端子的后级电路的电源电压VCC。即，输出驱动器电路10向输出端子17输出“H”电平。
在输入端子13的电压为“H”电平的情况下，选择器电路14输出恒流镜用MOS晶体管12的栅极电压。NMOS晶体管15导通，从而在源极－漏极间流过由电源电压VCC和上拉电阻16的电阻值决定的电流。即，输出驱动器电路10向输出端子17输出“L”电平。
在此，考虑输出驱动器电路10的输出端子17与后级电路的电源电压VCC因某些原因而短路的情况。若NMOS晶体管15导通，则电源电压VCC和接地电压VSS会短路，因此在NMOS晶体管15的源极－漏极间流动过电流。
在NMOS晶体管15的源极－漏极间流动的电流的电流极限值Ilimit，取决于由恒流电路11产生的电流Iconst和电流镜电路的电流镜比。因此，NMOS晶体管15中，在源极－漏极间流动的电流与后级的电源电压VCC或上拉电阻16的电阻值无关地，被限制在电流极限值Ilimit。电流极限值Ilimit是用于限制过电流的值，被设定为比在正常动作时NMOS晶体管15导通的情况下流动的电流充分大的值。
如以上说明，依据本实施方式的输出驱动器电路，由于采用设置恒流镜用MOS晶体管12和选择器电路14，控制NMOS晶体管15的栅极电压的结构，能够以简单的电路结构实现输出端子17的过电流保护功能。
再者，如图2所示，恒流镜用MOS晶体管12也可以具备电流调整用的NMOS晶体管及熔丝，以能够调整电流镜比。通过这样构成恒流镜用MOS晶体管12，能够抑制恒流Iconst的偏差或电流镜比的偏差。因而，能够提高电流极限值Ilimit的精度。
此外，虽然未图示，但通过用熔丝修整等的方法调整恒流电路11，抑制电流极限值Ilimit的偏差也可。
此外，如图3所示，恒流镜用MOS晶体管12也可为具备接受连接在接地端子2侧的恒流电路11产生的电流的PMOS电流镜电路的结构。PMOS电流镜电路使恒流电路11的电流按电流镜比成倍，并流入饱和连线的NMOS晶体管。通过这样构成恒流镜用MOS晶体管12，做成PMOS电流镜电路和NMOS电流镜电路的2级结构，从而能够缩小电路面积。进而，电流镜的级数也可为任意级，此外，利用熔丝修整等的方法，以能够调整电流镜比也可。
此外，如图4所示，即便为Pch漏极开路形式的输出驱动器电路，利用恒流镜用MOS晶体管12和选择器电路44和输出MOS晶体管45，也能同样地实现过电流保护功能。在该情况下，输出端子17经由外部的上拉电阻16，与后级电路的接地端子4连接。此外，利用熔丝修整等的方法，附加抑制电流极限值Ilimit的偏差的功能也可。
标号说明
10，40　输出驱动器电路
11　 恒流电路
12　 恒流镜用MOS晶体管
13，53　输入端子
14，44　选择器电路
15，45　输出MOS晶体管
17　 输出端子
51　 参考电压电路
52　 比较器。

Claims (3)

1.一种输出驱动器电路，是作为带过电流保护功能的输出驱动器电路的漏极开路输出的输出驱动器电路，其特征在于，包括：
恒流电路，其第1端子与第2电源端子连接，且供给恒流；
恒流镜用MOS晶体管，其源极与第1电源端子连接，漏极和栅极与所述恒流电路的第2端子连接，且产生基于所述恒流的电压；
选择器电路，被输入所述恒流镜用MOS晶体管产生的基于所述恒流的电压和所述第1电源端子的电压，根据所述输出驱动器电路的输入端子的电压，输出所输入的任一电压；以及
输出MOS晶体管，其栅极与所述选择器电路的输出端子连接，漏极与所述输出驱动器电路的输出端子连接，源极与所述第1电源端子连接，
所述输出端子经由外部的上拉或下拉电阻而与所述第2电源端子连接，
从所述选择器电路输出所述恒流镜用MOS晶体管产生的基于所述恒流的电压时，所述恒流镜用MOS晶体管和所述输出MOS晶体管构成电流镜电路，根据基于所述恒流的电压，限制在所述输出MOS晶体管的源极－漏极间流动的电流，
从所述选择器电路输出所述第1电源端子的电压时，对所述输出MOS晶体管的栅极施加与源极相同的所述第1电源端子的电压，所述输出MOS晶体管截止。
2.根据权利要求1所述的输出驱动器电路，其特征在于：所述电流镜电路具有调整电流镜比的单元，从而调整所述输出MOS晶体管的电流极限值。
3.根据权利要求1所述的输出驱动器电路，其特征在于：所述恒流电路具有调整电流值的单元，能够调整所述输出MOS晶体管的电流极限值。
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WO2016103620A1 (ja) * 2014-12-26 2016-06-30 パナソニックＩｐマネジメント株式会社 表示装置及びスタンド
US20160239091A1 (en) * 2015-02-12 2016-08-18 Qualcomm Incorporated Controlled display of content on wearable displays
US9680474B1 (en) * 2016-03-17 2017-06-13 Xilinx, Inc. System and method to reduce footprint and improve yield of fabric muxes in programmable logic devices
US9871514B1 (en) * 2016-06-29 2018-01-16 Texas Instruments Incorporated Methods and apparatus for continuous current limiting for FETS in high inductive load systems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070164813A1 (en) * 2006-01-13 2007-07-19 Nec Electronics Corporation Laser diode driver
US20070268643A1 (en) * 2006-05-22 2007-11-22 Mediatek Singapore Pte Ltd Current limiter system, circuit and method for limiting current
US20090085532A1 (en) * 2007-10-02 2009-04-02 Mediatek Inc. Dc-dc converter
CN102156505A (zh) * 2009-12-25 2011-08-17 三美电机株式会社 电流源电路以及使用该电流源电路的延迟电路及振荡电路
JP2011171854A (ja) * 2010-02-16 2011-09-01 Canon Inc バッファリング回路および増幅回路
US20110227649A1 (en) * 2010-03-18 2011-09-22 Analog Devices, Inc. Apparatus and method for variable gain transconductance
CN202085343U (zh) * 2011-01-25 2011-12-21 武汉光华芯科技有限公司 一种宽电源电压范围的高性能led恒流驱动电路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343967A (ja) * 1992-06-09 1993-12-24 Toyota Autom Loom Works Ltd 保護回路
JPH0638363A (ja) 1992-07-20 1994-02-10 Mitsubishi Electric Corp 出力ドライバ回路
JPH06113443A (ja) * 1992-09-25 1994-04-22 Nec Kansai Ltd 過電流検出保護回路
US7740371B1 (en) * 1998-03-19 2010-06-22 Charles A. Lemaire Method and apparatus for pulsed L.E.D. illumination for a camera
US6343024B1 (en) * 2000-06-20 2002-01-29 Stmicroelectronics, Inc. Self-adjustable impedance line driver with hybrid
US7119611B2 (en) * 2003-04-11 2006-10-10 Vitesse Semiconductor Corporation On-chip calibrated source termination for voltage mode driver and method of calibration thereof
WO2010126491A1 (en) * 2009-04-28 2010-11-04 Semiconductor Components Industries, Llc Method for providing over current protection and circuit
JPWO2011111140A1 (ja) * 2010-03-10 2013-06-27 パナソニック株式会社 可変利得増幅器
TWI413361B (zh) * 2010-07-20 2013-10-21 Ind Tech Res Inst 電流式放大器
KR101419806B1 (ko) * 2010-11-19 2014-07-17 한국전자통신연구원 고정 대역폭을 갖는 가변 이득 증폭기
JP5938852B2 (ja) * 2011-05-25 2016-06-22 富士電機株式会社 電圧制御型スイッチング素子のゲート駆動回路
KR20150129155A (ko) * 2014-05-08 2015-11-19 에스케이하이닉스 주식회사 바이어스 샘플링 장치 및 그에 따른 씨모스 이미지 센서

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070164813A1 (en) * 2006-01-13 2007-07-19 Nec Electronics Corporation Laser diode driver
US20070268643A1 (en) * 2006-05-22 2007-11-22 Mediatek Singapore Pte Ltd Current limiter system, circuit and method for limiting current
US20090085532A1 (en) * 2007-10-02 2009-04-02 Mediatek Inc. Dc-dc converter
CN102156505A (zh) * 2009-12-25 2011-08-17 三美电机株式会社 电流源电路以及使用该电流源电路的延迟电路及振荡电路
JP2011171854A (ja) * 2010-02-16 2011-09-01 Canon Inc バッファリング回路および増幅回路
US20110227649A1 (en) * 2010-03-18 2011-09-22 Analog Devices, Inc. Apparatus and method for variable gain transconductance
CN202085343U (zh) * 2011-01-25 2011-12-21 武汉光华芯科技有限公司 一种宽电源电压范围的高性能led恒流驱动电路

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