CN111505767B - 基于氧化硅掩膜的铌酸锂光子芯片制备方法 - Google Patents
基于氧化硅掩膜的铌酸锂光子芯片制备方法 Download PDFInfo
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- CN111505767B CN111505767B CN202010347303.6A CN202010347303A CN111505767B CN 111505767 B CN111505767 B CN 111505767B CN 202010347303 A CN202010347303 A CN 202010347303A CN 111505767 B CN111505767 B CN 111505767B
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- etching
- lithium niobate
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 238000000992 sputter etching Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 48
- 150000002500 ions Chemical class 0.000 claims description 12
- -1 argon ion Chemical class 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 238000005234 chemical deposition Methods 0.000 claims description 5
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 23
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QXHRQZNDMYRDPA-UHFFFAOYSA-N 3,4-dimethylpentan-2-one Chemical compound CC(C)C(C)C(C)=O QXHRQZNDMYRDPA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
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CN202010347303.6A CN111505767B (zh) | 2020-04-28 | 2020-04-28 | 基于氧化硅掩膜的铌酸锂光子芯片制备方法 |
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CN202010347303.6A CN111505767B (zh) | 2020-04-28 | 2020-04-28 | 基于氧化硅掩膜的铌酸锂光子芯片制备方法 |
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CN111505767B true CN111505767B (zh) | 2022-02-25 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111965761B (zh) * | 2020-08-18 | 2022-08-19 | 上海交通大学 | 基于铌酸锂薄膜材料的光栅耦合器及其制造方法 |
CN113687466B (zh) * | 2021-08-03 | 2022-09-16 | 上海交通大学 | 基于金属硬掩模的铌酸锂薄膜光子芯片及其加工方法 |
CN114924341B (zh) * | 2022-05-06 | 2023-06-06 | 上海交通大学 | 提高fib刻蚀超浅光栅结构侧壁垂直度的方法及*** |
CN115016063B (zh) * | 2022-05-26 | 2024-04-12 | 天津华慧芯科技集团有限公司 | 一种双层胶掩膜分步刻蚀亚纳米级精度波导工艺 |
WO2024092422A1 (zh) * | 2022-10-31 | 2024-05-10 | 清华大学 | 薄膜铌酸锂的湿法刻蚀方法及薄膜铌酸锂器件 |
CN116299857B (zh) * | 2023-02-09 | 2024-05-07 | 江苏浦丹光电技术有限公司 | 一种铌酸锂薄膜光波导及其制备方法 |
CN116931168A (zh) * | 2023-07-11 | 2023-10-24 | 苏州康冠光电科技有限公司 | 三角形端面的铌酸锂薄膜波导、制备方法及模斑变换器 |
CN116953850B (zh) * | 2023-09-19 | 2024-01-19 | 济南量子技术研究院 | 一种铌酸锂薄膜波导器件及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616234B1 (en) * | 1993-03-18 | 1999-06-02 | Nippon Telegraph And Telephone Corporation | Method of manufacturing a polyimide optical waveguide |
CN101710195A (zh) * | 2009-12-09 | 2010-05-19 | 中国科学院半导体研究所 | Soi亚微米脊型光波导倒锥耦合器免刻蚀氧化制作方法 |
CN102183816A (zh) * | 2011-04-29 | 2011-09-14 | 上海交通大学 | 阶梯结构的硅基表面等离子体波导的制备方法 |
CN107843957A (zh) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | 氮化硅‑铌酸锂异质集成波导器件结构及制备方法 |
CN110989076A (zh) * | 2019-12-12 | 2020-04-10 | 华中科技大学 | 一种薄膜铌酸锂单偏振波导及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109149047A (zh) * | 2018-08-27 | 2019-01-04 | 中国科学院上海光学精密机械研究所 | 一种片上低损耗超细脊状波导的制备方法 |
US10670806B2 (en) * | 2018-05-08 | 2020-06-02 | Shanghai Institute Of Optics And Fine Mechanics, Chinese Academy Of Sciences | Method for preparing film micro-optical structure based on photolithography and chemomechanical polishing |
CN110208906A (zh) * | 2019-05-21 | 2019-09-06 | 中国科学院上海光学精密机械研究所 | 一种基于反应离子刻蚀的薄膜微光学结构的制备方法 |
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2020
- 2020-04-28 CN CN202010347303.6A patent/CN111505767B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616234B1 (en) * | 1993-03-18 | 1999-06-02 | Nippon Telegraph And Telephone Corporation | Method of manufacturing a polyimide optical waveguide |
CN101710195A (zh) * | 2009-12-09 | 2010-05-19 | 中国科学院半导体研究所 | Soi亚微米脊型光波导倒锥耦合器免刻蚀氧化制作方法 |
CN102183816A (zh) * | 2011-04-29 | 2011-09-14 | 上海交通大学 | 阶梯结构的硅基表面等离子体波导的制备方法 |
CN107843957A (zh) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | 氮化硅‑铌酸锂异质集成波导器件结构及制备方法 |
CN110989076A (zh) * | 2019-12-12 | 2020-04-10 | 华中科技大学 | 一种薄膜铌酸锂单偏振波导及其制备方法 |
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Effective date of registration: 20231030 Address after: 201210 3rd floor, building 1, No.400, Fangchun Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shanghai Turing intelligent computing Quantum Technology Co.,Ltd. Address before: 201100 Room 110 and 111, Building 3, No. 600, Jianchuan Road, Minhang District, Shanghai Patentee before: Shanghai Jiaotong University Intellectual Property Management Co.,Ltd. |
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