CN111504934A - Adjustable infrared heat radiation device based on double-suspension structure - Google Patents

Adjustable infrared heat radiation device based on double-suspension structure Download PDF

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CN111504934A
CN111504934A CN202010426746.4A CN202010426746A CN111504934A CN 111504934 A CN111504934 A CN 111504934A CN 202010426746 A CN202010426746 A CN 202010426746A CN 111504934 A CN111504934 A CN 111504934A
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suspension structure
supporting layer
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suspension
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CN111504934B (en
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何赛灵
郭庭彪
贺楠
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Zhejiang University ZJU
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0022—Protection against electrostatic discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/04—Networks or arrays of similar microstructural devices
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G01N2021/0112—Apparatus in one mechanical, optical or electronic block
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06166—Line selective sources
    • G01N2201/06173—IR sources from heated molecular species

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Abstract

The invention discloses an adjustable infrared heat radiation device based on a double-suspension structure, which comprises a lower-layer suspension structure and an upper-layer suspension structure; the lower suspension structure sequentially comprises a substrate, a lower supporting layer, a lower heating layer and a lower conducting layer from bottom to top; the upper suspended structure sequentially comprises an upper supporting layer, an upper insulating layer, an upper conducting layer and an upper semiconductor micro-nano structure from bottom to top or sequentially comprises an upper supporting layer, an upper insulating layer and an upper metal micro-nano structure; through the temperature of adjusting lower floor's suspended structure, adjust adjustable infrared thermal radiation device's black body radiation background spectral line, through adding the electrostatic force between the electrically conductive layer of voltage control upper and lower floor, influence its deformation degree to promote upper strata suspended structure and be close to or keep away from lower floor's suspended structure, change upper air gap, and then change the radiation wavelength and the radiation intensity of receiving the nanostructure, can realize functions such as wavelength tuning and intensity modulation under the low-power consumption state.

Description

Adjustable infrared heat radiation device based on double-suspension structure
Technical Field
The invention relates to an adjustable infrared radiation device which is suitable for the fields of infrared imaging, gas sensing, infrared stealth (anti-counterfeiting), spectrum technology and the like.
Background
At present, a Quantum Cascade laser (QC Cascade L aser, L) is a narrow-band light source used for gas characteristic fingerprint spectrum detection in the mid-infrared band range of 4-12 um, and generally, as the mid-infrared light source, QC L has a narrow emergent light bandwidth, the central wavelength of QC L with a wavelength in the range of 8 um-10 um can generally be adjusted to a wavelength of about 20 nm-30 nm, and the frequency of direct modulation of intensity can also reach the kHz order.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide an adjustable infrared heat radiation device based on a double-suspension structure, which is composed of an upper suspension structure and a lower suspension structure: the lower suspension structure is used for realizing the heating function; the upper layer structure is a suspended micro-nano structure. The blackbody radiation background spectral line of the device can be integrally adjusted by adjusting the temperature of the lower layer structure; and the adjustment of the air layer gap of the upper suspension structure can adjust the radiation wavelength, the radiation intensity and the like, thereby meeting the application of various sensing technologies.
An adjustable infrared heat radiation device based on a double-suspension structure comprises a lower-layer suspension structure and an upper-layer suspension structure; the lower suspension structure sequentially comprises a substrate, a lower supporting layer, a lower heating layer and a lower conducting layer from bottom to top; the upper suspended structure sequentially comprises an upper supporting layer, an upper insulating layer, an upper conducting layer and an upper semiconductor micro-nano structure from bottom to top or sequentially comprises an upper supporting layer, an upper insulating layer and an upper metal micro-nano structure; the base is concave and forms a lower air gap together with the lower supporting layer; the middle of the upper supporting layer is hollowed, and an upper air gap is formed by the hollowed upper supporting layer, the upper conducting layer, the upper supporting layer and the upper insulating layer; through the temperature of adjusting lower floor's suspended structure, adjust adjustable infrared thermal radiation device's black body radiation background spectral line, through adding the electrostatic force between the electrically conductive layer of voltage control upper and lower floor, influence its deformation degree to promote upper strata suspended structure and be close to or keep away from lower floor's suspended structure, change upper air gap, and then change the radiation wavelength and the radiation intensity of receiving the structure a little, realize wavelength tuning and intensity modulation.
The substrate is a silicon substrate, a lower suspension structure is manufactured on the silicon substrate, a lower supporting layer is made of a dielectric material, and a lower heating layer is made of a metal material and is designed into a spiral, disc-shaped or annular structure so as to be heated uniformly; two ends of the lower heating layer are respectively led out of an electrode, and the electric signals are applied to the electrodes to convert the current into heat energy through metal heating; the lower heating layer is suspended on the silicon substrate by the lower supporting layer.
The upper semiconductor micro-nano structure or the upper metal micro-nano structure radiates or absorbs infrared light with specific wavelength, and mode coupling exists between the upper semiconductor micro-nano structure or the upper metal micro-nano structure and the lower conductive layer.
The adjustable infrared heat radiation device with the double-suspension structure introduces an electric signal into the upper-layer suspension structure in a metal lead wire combination or through hole mode.
The invention has the beneficial effects that:
1. the invention adopts a double-layer suspension structure scheme, separates the heating function from the radiation regulation function, can improve the thermal efficiency of the device, and simultaneously effectively regulates and controls the infrared radiation of the device;
2. the technical scheme adopted by the invention can realize the functions of wavelength tuning, intensity modulation and the like in a low power consumption state, the tuning range can reach the QC L level, and the modulation speed can break through the bottleneck of direct thermal regulation.
Drawings
Fig. 1 is a schematic structural diagram of an adjustable infrared thermal radiation device (based on a semiconductor micro-nano structure) with a double-suspension structure according to the invention;
FIG. 2 is another schematic structural diagram of an adjustable infrared heat radiation device (based on a metal micro-nano structure) with a double-suspension structure according to the invention;
fig. 3 is a radiation spectrum of the narrow-band radiator based on the gold micro-nano structure designed by the invention under different air gaps.
Description of reference numerals:
the device comprises a substrate 1, a lower supporting layer 2, a lower heating layer 3, a lower conducting layer 4, an upper supporting layer 5, an upper insulating layer 6, an upper conducting layer 7, an upper semiconductor micro-nano structure 8, an upper metal micro-nano structure 9, an upper air gap 10 and a lower air gap 11.
Detailed Description
The invention is further elucidated with reference to the figures and embodiments.
Example 1
As shown in fig. 1, an adjustable infrared thermal radiation device based on a double-suspension structure includes a lower-layer suspension structure and an upper-layer suspension structure; the lower suspension structure sequentially comprises a substrate 1, a lower supporting layer 2, a lower heating layer 3 and a lower conducting layer 4 from bottom to top; the upper suspension structure sequentially comprises an upper supporting layer 5, an upper insulating layer 6, an upper conducting layer 7 and an upper semiconductor micro-nano structure 8 from bottom to top; the base 1 is concave and forms a lower air gap 11 together with the lower support layer 2; the upper supporting layer 5 is hollowed out to form an upper air gap 10 together with the upper conductive layer 4, the upper supporting layer 5 and the upper insulating layer 6.
The substrate 1 is made of silicon, the lower supporting structure 2 can be made of common dielectric materials (silicon dioxide, silicon nitride, hafnium fluoride, magnesium fluoride and the like), and the lower heating structure 3 is made of metal materials (such as platinum, tungsten, titanium nitride, titanium and the like), and can be designed into a spiral, disc-shaped, annular and other structures so as to heat more uniformly; two ends of the heating material are respectively led out of an electrode, and the electrodes are applied with electric signals, so that the current can be converted into heat energy through metal heating, the integral temperature of the device can be further adjusted, and the blackbody radiation of the device can be controlled within a required wavelength range. The lower heating layer depends on the supporting structure 2 to be suspended on the silicon substrate 1, and the suspended design, namely the lower air gap 11 can reduce heat loss and improve the heating efficiency.
The lower heating structure is covered with a conductive layer 4 (which may be made of metal, doped semiconductor, transparent conductive material, graphene, etc.) to form a set of electrodes with the upper conductive layer 7.
The upper suspended structure is suspended on the lower suspended structure through the supporting structure 5, and the middle is isolated by an air layer. The supporting structure 5 of the upper suspension structure is provided with a thin insulating layer 6 (silicon dioxide, silicon nitride, hafnium fluoride, magnesium fluoride and other media), so that the upper electrode plate and the lower electrode plate cannot be in contact with a short circuit in the adjusting process, an upper conductive layer 7 (such as metal, doped semiconductor, transparent conductive material, graphene and the like) grows on the upper conductive layer, and the upper conductive layer and the lower conductive layer 4 form a group of electrodes. By applying an electric signal to the upper and lower conductive layers, electrostatic force is generated between the two layers, so that the upper suspension structure is pushed to be close to or far away from the lower suspension structure.
The upper layer micro-nano structure 8 (cylinder, rectangle and other structures) made of semiconductor materials is manufactured on the upper layer conducting layer 7, the structures can radiate (absorb) infrared light with specific wavelength, mode coupling exists between the structure and the lower layer conducting layer 4, electric signals are applied to the upper and lower conducting layers, the size of electrostatic force between the upper and lower conducting layers is controlled, the distance between the upper and lower suspended structures can be changed, the coupling strength of the structure and the lower suspended structure is further controlled, the radiation wavelength and the radiation intensity of the structure can be finally changed, and wavelength tuning and intensity modulation are achieved. In addition, by designing the upper layer micro-nano structure, the radiation characteristic of the device can be conveniently regulated and controlled, and the characteristics such as narrow band, high directivity and the like are realized.
Example 2
As shown in fig. 2, the difference from embodiment 1 is that an upper conductive layer is not separately provided in this embodiment, and the upper conductive layer 7 and the upper micro-nano structure 8 are replaced by an upper metal microstructure 9, which is a hole structure on a metal film, so that on one hand, radiation control can be performed, and on the other hand, the metal film can be used as an electrode.
The lower suspension structure is made on a substrate 1 made of silicon material, and the support structure 2 is made of common dielectric material. The lower heating layer 3 is made of metal material (such as platinum, tungsten, titanium nitride, titanium, etc.), and can be designed into spiral, disc-shaped, annular structures, etc. to make the heating more uniform; two ends of the heating material are respectively led out of an electrode, and electric signals are applied to the electrodes, so that the current can be converted into heat energy through metal heating. The lower layer heating layer 4 depends on the lower layer supporting layer 2 to be suspended on the silicon substrate, and the suspended design can reduce heat loss and improve heating efficiency.
The lower heating layer 3 is covered with a lower conductive layer 4 (such as metal, doped semiconductor, transparent conductive material, graphene and the like) to form a group of electrodes together with the upper conductive layer 4, and in order to apply an electric signal to the upper conductive layer, the electric signal can be input into an upper suspended structure by using a metal lead bonding technology, or the electric signal can be introduced into the upper structure by adopting a punching mode.
The upper suspension structure is suspended on the lower suspension structure through a supporting layer 5, and the middle of the upper suspension structure is isolated by an air layer. The upper layer suspension structure supporting layer is provided with a thin upper insulating layer 6 (silicon dioxide, silicon nitride, hafnium fluoride, magnesium fluoride and other media), short circuit contact in the adjustment process of the upper electrode polar plate and the lower electrode polar plate is ensured, an upper layer metal micro-nano structure 9 made of metal and other conductive materials is manufactured on the upper layer metal micro-nano structure, the micro-nano structure can radiate (absorb) infrared light with specific wavelength, mode coupling exists between the structure and the lower layer conductive layer 4, electric signals are applied to the micro-nano structure and the lower layer conductive layer 4, electrostatic force can be generated between the upper layer suspension structure and the lower layer suspension structure, the upper layer suspension structure is pushed to be close to or far away from the lower layer suspension structure, the air space of the upper layer suspension structure and the lower layer suspension structure is changed, the radiation wavelength and the radiation intensity of the upper layer. As shown in fig. 3, the radiation wavelength and the radiation intensity of the above-mentioned structure can be changed by changing the distance between the upper and lower layer suspended structures, so as to achieve the purpose of modulation.
The invention adopts a double-suspension structure, and the lower-layer suspension structure is used for heating the device, so that the integral temperature of the device is in the required blackbody radiation spectrum range; the upper suspension structure utilizes the micro-nano structure to regulate and control the infrared heat radiation characteristic of the device, and the characteristics of broadband/narrow band, high directivity and the like can be realized through design optimization. In addition, the distance between the suspension structures can be adjusted by applying electric signals to the upper suspension structure and the lower suspension structure, so that the infrared radiation characteristic of the device is changed, and the functions of wavelength tuning and intensity modulation are further realized.
The embodiments in the above description can be further combined or replaced, and the embodiments are only described as preferred examples of the present invention, and do not limit the concept and scope of the present invention, and various changes and modifications made to the technical solution of the present invention by those skilled in the art without departing from the design concept of the present invention belong to the protection scope of the present invention. The scope of the invention is given by the appended claims and any equivalents thereof.

Claims (4)

1. An adjustable infrared heat radiation device based on a double-suspension structure is characterized by comprising a lower-layer suspension structure and an upper-layer suspension structure;
the lower suspension structure sequentially comprises a substrate, a lower supporting layer, a lower heating layer and a lower conducting layer from bottom to top;
the upper suspended structure sequentially comprises an upper supporting layer, an upper insulating layer, an upper conducting layer and an upper semiconductor micro-nano structure from bottom to top or sequentially comprises an upper supporting layer, an upper insulating layer and an upper metal micro-nano structure;
the base is concave and forms a lower air gap together with the lower supporting layer; the middle of the upper supporting layer is hollowed, and an upper air gap is formed by the hollowed upper supporting layer, the upper conducting layer, the upper supporting layer and the upper insulating layer;
through the temperature of adjusting lower floor's suspended structure, adjust adjustable infrared thermal radiation device's black body radiation background spectral line, through adding the electrostatic force between the electrically conductive layer of voltage control upper and lower floor, influence its deformation degree to promote upper strata suspended structure and be close to or keep away from lower floor's suspended structure, change upper air gap, and then change the radiation wavelength and the radiation intensity of receiving the structure a little, realize wavelength tuning and intensity modulation.
2. The tunable infrared thermal radiation device with a double suspension structure as claimed in claim 1, wherein the substrate is a silicon substrate, the lower suspension structure is formed on the silicon substrate, the lower supporting layer is made of a dielectric material, and the lower heating layer is made of a metal material and is designed to be a spiral, disc-shaped or annular structure so as to heat uniformly; two ends of the lower heating layer are respectively led out of an electrode, and the electric signals are applied to the electrodes to convert the current into heat energy through metal heating; the lower heating layer is suspended on the silicon substrate by the lower supporting layer.
3. The tunable infrared thermal radiation device of claim 1, wherein the upper semiconductor micro-nano structure or the upper metal micro-nano structure radiates or absorbs infrared light with a specific wavelength, and mode coupling exists between the upper semiconductor micro-nano structure or the upper metal micro-nano structure and the lower conductive layer.
4. The tunable infrared heat radiation device of a double suspension structure as set forth in claim 1, wherein the electric signal is introduced into the upper suspension structure by means of metal wire bonding or via hole.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112082967A (en) * 2020-09-18 2020-12-15 重庆大学 Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002054995A (en) * 2000-08-10 2002-02-20 Sharp Corp Thermal type infrared ray detecting element, infrared ray image pickup device having this and method of manufacturing thermal type infrared. ray detecting element
CN101949836A (en) * 2010-08-25 2011-01-19 华中科技大学 Thermal radiation infrared transmitting and probing integrated device
CN102226719A (en) * 2011-04-08 2011-10-26 华中科技大学 Infrared absorption structure and uncooled infrared detector based on infrared absorption structure
CN102393253A (en) * 2011-11-03 2012-03-28 无锡萌涉传感技术有限公司 Spectrum micro-bolometer
CN202453088U (en) * 2011-11-03 2012-09-26 无锡萌涉传感技术有限公司 Spectrum micro-bolometer
CN103557944A (en) * 2013-10-24 2014-02-05 北京航空航天大学 CNT infrared sensor with low power consumption and high sensitivity
CN103776546A (en) * 2014-01-21 2014-05-07 武汉高芯科技有限公司 Non-refrigeration infrared focal plane array detector of double-layer structure
CN105486414A (en) * 2015-12-23 2016-04-13 中国科学院重庆绿色智能技术研究院 Micro-bolometer based on graphene
CN205607540U (en) * 2015-12-23 2016-09-28 中国科学院重庆绿色智能技术研究院 Micro -bolometer based on graphite alkene
CN106768352A (en) * 2016-11-25 2017-05-31 中国科学院上海技术物理研究所 A kind of infrared narrow-band radiated source and preparation method thereof
WO2017211110A1 (en) * 2016-06-07 2017-12-14 上海新微技术研发中心有限公司 Radiometer and manufacturing method thereof
WO2018077870A1 (en) * 2016-10-25 2018-05-03 Trinamix Gmbh Nfrared optical detector with integrated filter
CN212321428U (en) * 2020-05-19 2021-01-08 浙江大学 Adjustable infrared heat radiation device based on double-suspension structure

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002054995A (en) * 2000-08-10 2002-02-20 Sharp Corp Thermal type infrared ray detecting element, infrared ray image pickup device having this and method of manufacturing thermal type infrared. ray detecting element
CN101949836A (en) * 2010-08-25 2011-01-19 华中科技大学 Thermal radiation infrared transmitting and probing integrated device
CN102226719A (en) * 2011-04-08 2011-10-26 华中科技大学 Infrared absorption structure and uncooled infrared detector based on infrared absorption structure
CN102393253A (en) * 2011-11-03 2012-03-28 无锡萌涉传感技术有限公司 Spectrum micro-bolometer
CN202453088U (en) * 2011-11-03 2012-09-26 无锡萌涉传感技术有限公司 Spectrum micro-bolometer
CN103557944A (en) * 2013-10-24 2014-02-05 北京航空航天大学 CNT infrared sensor with low power consumption and high sensitivity
CN103776546A (en) * 2014-01-21 2014-05-07 武汉高芯科技有限公司 Non-refrigeration infrared focal plane array detector of double-layer structure
CN105486414A (en) * 2015-12-23 2016-04-13 中国科学院重庆绿色智能技术研究院 Micro-bolometer based on graphene
CN205607540U (en) * 2015-12-23 2016-09-28 中国科学院重庆绿色智能技术研究院 Micro -bolometer based on graphite alkene
WO2017211110A1 (en) * 2016-06-07 2017-12-14 上海新微技术研发中心有限公司 Radiometer and manufacturing method thereof
WO2018077870A1 (en) * 2016-10-25 2018-05-03 Trinamix Gmbh Nfrared optical detector with integrated filter
CN106768352A (en) * 2016-11-25 2017-05-31 中国科学院上海技术物理研究所 A kind of infrared narrow-band radiated source and preparation method thereof
CN212321428U (en) * 2020-05-19 2021-01-08 浙江大学 Adjustable infrared heat radiation device based on double-suspension structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
纪新明 等: "一种可直接脉冲调制的MEMS 红外激发源", 《光学精密工程》, vol. 13, no. 2, 30 April 2005 (2005-04-30), pages 144 - 150 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112082967A (en) * 2020-09-18 2020-12-15 重庆大学 Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor

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