CN114249292A - MEMS infrared light source and manufacturing method thereof - Google Patents
MEMS infrared light source and manufacturing method thereof Download PDFInfo
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- CN114249292A CN114249292A CN202111436494.4A CN202111436494A CN114249292A CN 114249292 A CN114249292 A CN 114249292A CN 202111436494 A CN202111436494 A CN 202111436494A CN 114249292 A CN114249292 A CN 114249292A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
Abstract
The invention belongs to the field of infrared light sources, and particularly relates to an MEMS infrared light source and a manufacturing method thereof. The MEMS infrared light source introduces a reflecting layer with high reflectivity to infrared radiation at the back of the heating electrode layer and the supporting material (located in the substrate cavity area), so that the infrared radiation energy radiated by the heating electrode layer to the substrate cavity part through the supporting film is reflected back and radiated upwards through the heating electrode layer, the infrared radiation energy capable of being utilized by the infrared sensor is enhanced, the photoelectric conversion efficiency of the MEMS infrared light source is greatly improved, and the heating power consumption is reduced; and meanwhile, an ultrathin (thickness not more than 1 micron) infrared emission layer is introduced, so that the thermal mass of a heating electrode layer is greatly reduced while the high infrared emission capability of the MEMS infrared light source is ensured, the modulation frequency of the MEMS infrared light source is improved, and the heating power consumption is further reduced.
Description
Technical Field
The invention belongs to the field of infrared light sources, and particularly relates to an MEMS infrared light source and a manufacturing method thereof.
Background
Infrared sensing technology has been widely used in the fields of atmospheric quality detection, temperature monitoring, industrial process control, space monitoring, information communication, medicine, military and the like. Infrared light sources are important components of infrared sensing technology and commonly used emission wavelengths are 3-5 microns and 8-14 microns. The infrared light source mainly comprises an infrared light emitting diode, a quantum cascade infrared laser and a thermal radiation infrared light source. The traditional heat radiation infrared light source such as an incandescent lamp has low electro-optic conversion efficiency and poor modulation characteristics; the infrared diode with the wavelength of 3-5 microns has low luminous efficiency and low output power, so that the application of the infrared diode is limited; quantum cascade infrared lasers are capable of emitting high-intensity narrow-band infrared laser light, but are also inefficient and expensive to manufacture. The MEMS infrared light source manufactured by utilizing the Micro Electro Mechanical System (MEMS) technology is a novel thermal radiation infrared light source, has the characteristics of high electro-optic conversion efficiency, small volume, low energy consumption and the like, simultaneously has a spectrum which easily covers the range of 2-20 microns, also has faster modulation frequency, is widely applied to the infrared sensing field, and becomes a trend technology of the infrared light source.
An MEMS infrared light source of a conventional structure is shown in fig. 1, and includes a substrate, a supporting thin film layer provided on the substrate, the supporting thin film layer and the substrate being connected by a four-side clamped structure, and a heating electrode layer provided on the supporting thin film layer. Joule heat is generated by energizing the heat-generating electrode layer, so that the heat-generating electrode layer is heated to a specific temperature (determined according to the required infrared emission wavelength and radiation amount), thereby generating infrared radiation. In order to make the MEMS infrared light source exert the features of high electro-optic conversion efficiency, small size, low energy consumption and fast modulation frequency to a greater extent, the following problems generally need to be considered when designing the MEMS infrared light source:
(1) the infrared emitting material of the MEMS infrared light source (which may be the heat generating electrode layer itself, or a combination of the heat generating electrode layer and other material with high infrared emissivity on the surface of the heat generating electrode layer) should have as small a volume to surface area ratio as possible. Given a given surface area (a balance of increased emission area and reduced MEMS light source volume to determine a suitable surface area), this means that thinner ir-emitting material is required, which equates to a reduced thermal mass of the ir-emitting material, which can reduce heating power consumption while increasing the electro-optic conversion efficiency and modulation frequency.
(2) The MEMS infrared light source mainly dissipates heat through two ways of heat conduction and infrared radiation, wherein the heat conduction is that the heating electrode layer transfers heat through the substrate, the heat transfer of the part is reduced as much as possible so as to improve the electro-optic conversion efficiency of the MEMS infrared light source and reduce the heating power consumption, and the infrared radiation is the core of the work of the MEMS infrared light source and needs to be enhanced. Therefore, it is necessary to greatly reduce the thermal conductivity of the heat generating electrode layer, and as shown in fig. 1, the substrate under the heat generating electrode layer is usually hollowed to reduce the thermal conductivity of the substrate; the heating electrode layer can be made of a material with high emissivity or the surface of the heating electrode layer is additionally provided with an infrared emission layer with higher infrared emissivity.
(3) The infrared radiation of the MEMS infrared source mainly emerges from two directions: one is radiated outwards from the upper part of the heating electrode layer, and the infrared radiation is a part which can be utilized by the infrared sensor and needs to be enhanced; the other is radiation from the heating electrode layer to the substrate hollow part through the supporting film, the infrared radiation of the part is absorbed by packaging materials, the substrate and the like after the MEMS infrared light source is packaged, the effective utilization cannot be realized, the energy waste is realized, and the reduction and even elimination are required as far as possible.
(4) Other properties include good thermal stability and mechanical parameters of the heat-generating electrode layer, good chemical stability at high temperature, low heat capacity, high infrared emissivity, etc., and also take into account the structural characteristics of the whole MEMS infrared light source and the stress matching among various materials.
Based on the design consideration of above several aspects, current MEMS infrared light source has obtained huge progress, for example through the thermal conductance that the substrate hollowing technique has reduced MEMS infrared light source by a wide margin, promoted MEMS infrared light source's electro-optic conversion efficiency and reduced the heating consumption, promote infrared emission ability through introducing the material or the microstructure that have high infrared emissivity above the electrode layer that generates heat to reduce MEMS infrared light source's heating consumption, also had fine understanding to the selection of the electrode layer that generates heat simultaneously. However, there are still some problems with existing MEMS infrared light sources:
firstly, the electrode layer that generates heat commonly used at present infrared emission rate under operating temperature is low on the one hand, need set up extra infrared emission layer above that and promote MEMS infrared light source's infrared emission ability, common infrared emission layer includes platinum black, gold black, silver black, black silicon, photonic crystal etc, these emission layers can promote MEMS infrared light source's infrared emission ability by a wide margin really, but all have the thickness that several microns reach tens of microns usually, the thermal mass of the electrode layer that generates heat has been increased by a wide margin, can increase MEMS infrared light source's heating consumption, reduce modulation frequency simultaneously, these infrared emission layer preparation technology is complicated in addition, and is with high costs, be unfavorable for reducing MEMS infrared light source's cost.
Secondly, the existing MEMS infrared light source does not effectively solve the problem of utilization of infrared energy radiated from the heating electrode layer to the hollowed part of the substrate through the supporting film, so that huge waste of infrared radiation energy is caused, and the heating power consumption of the MEMS infrared light source is increased.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides an MEMS infrared light source and a manufacturing method thereof, on the basis of the existing MEMS infrared light source, a reflecting layer with high reflectivity to infrared radiation is introduced at the back of a heating electrode layer and a supporting material (positioned in a substrate cavity area), so that infrared radiation energy radiated to the substrate cavity part by the heating electrode layer through a supporting film is reflected back, and is radiated upwards through the heating electrode layer, the infrared radiation energy capable of being utilized by an infrared sensor is enhanced, the photoelectric conversion efficiency of the MEMS infrared light source is greatly improved, and the heating power consumption is reduced; and meanwhile, an ultrathin (thickness not more than 1 micron) infrared emission layer is introduced, so that the thermal mass of a heating electrode layer is greatly reduced while the high infrared emission capability of the MEMS infrared light source is ensured, the modulation frequency of the MEMS infrared light source is improved, and the heating power consumption is further reduced. The two problems of the existing MEMS infrared light source are solved.
The purpose of the invention is realized as follows:
the utility model provides a MEMS infrared light source, contains substrate, support thin film layer, the electrode layer that generates heat, isolation layer, the electrode pad that generates heat, infrared emission layer, protective layer and reflection stratum, its characterized in that: the substrate contains the cavity structure, support on the thin layer locates the substrate that has the cavity structure, form four sides with the substrate and prop up the structural connection admittedly to form the suspension district in cavity structure top support thin layer top and be equipped with the electrode layer that generates heat, be equipped with the electrode pad that generates heat in the electrode layer both sides that generate heat outside the suspension district, generate heat the electrode pad with the electrode layer that generates heat forms the electricity and connects the region that generates heat electrode layer top except that the electrode pad that generates heat is equipped with the isolation layer, is equipped with the infrared emission layer on the isolation layer that suspension district top corresponds, the protective layer is located infrared emission layer, infrared electrode layer and the support thin layer upper surface except that the electrode pad that generates heat, the reflection level is located the cavity structure, and is continuous with the substrate of cavity structure side and the support thin layer of cavity structure top surface.
Furthermore, the reflecting layer is a film with high reflectivity for infrared rays with the wavelength range of 2-14 microns, and is a Bragg reflecting layer made of Ag, Au, Cu, Al or a dielectric film.
Furthermore, the infrared emission layer is a material with rough surface, thickness of 50-1000nm and high infrared emissivity, and is NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO2、HfO2、La1-xCaxCrO3(x is more than or equal to 0 and less than or equal to 0.5) or carbon nanotubes.
Further, the heating electrode layer is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W and HfB2PtSi and SnO2In the above, a Ti layer, a Cr layer, a Ni layer or the like having a thickness of 1 to 200nm may be introduced between the heat-generating electrode layer and the supporting thin film layer to increase the adhesion between the heat-generating electrode layer and the supporting thin film layer.
Furthermore, the supporting film layer is a multi-layer composite film structure composed of silicon oxide, silicon nitride or silicon nitride and silicon oxide.
Furthermore, the isolation layer is one or a combination of several of silicon oxide, silicon nitride and aluminum oxide.
Furthermore, the protective layer is one or a combination of several of silicon oxide, silicon nitride, aluminum oxide and hafnium oxide.
Further, the heating electrode pad is one of an AlSi alloy, Au, Al, NiCr alloy, and NiV alloy.
Further, the substrate is monocrystalline silicon or quartz.
A MEMS infrared light source manufacturing method comprises the following steps:
(1) providing a substrate, depositing a supporting thin film layer on the substrate,
(2) a heating electrode layer is manufactured on the supporting film layer,
(3) an isolating layer is manufactured on the heating electrode layer,
(4) heating electrode pads are manufactured on two sides of the isolation layer by adopting a lift-off photoetching method,
(5) an infrared emission layer is manufactured on the isolation layer at the inner side of the heating electrode bonding pad,
(6) depositing a protective layer covering the upper surfaces of the infrared emission layer, the infrared electrode layer and the support and support film layer,
(7) etching the back surface of the substrate by using a double-sided alignment photoetching technology to form a cavity structure,
a suspension area supported by a supporting thin film layer is formed above the cavity structure, the infrared emission layer is located in an area inside the suspension area, the heating electrode pad is located in an area outside the suspension area, and the supporting thin film layer and the substrate form a supporting effect below the heating electrode pad so as to facilitate bonding of the heating electrode pad and an external circuit lead;
(8) a reflecting layer is manufactured in the cavity structure on the back surface of the substrate,
furthermore, the manufacturing process of the infrared emission layer comprises two steps of deposition and surface treatment, wherein the infrared emission layer is deposited on the isolation layer on the inner side of the heating electrode bonding pad, and then the surface treatment is carried out on the infrared emission layer by a dry etching or wet etching method, so that the infrared emission layer with rough surface and thickness of 50-1000nm is obtained.
Compared with the prior art, the invention has the following beneficial effects:
compared with the existing MEMS infrared light source, the invention introduces the reflecting layer with high reflectivity to infrared radiation at the back of the heating electrode layer and the supporting material (located in the substrate cavity area), so that the infrared radiation energy radiated by the heating electrode layer to the substrate cavity part through the supporting film is reflected back (the infrared radiation energy of the existing structure is wasted), and the infrared radiation energy radiated by the MEMS infrared light source to the outside is enhanced through the upward radiation of the heating electrode layer, thereby greatly improving the photoelectric conversion efficiency of the MEMS infrared light source and reducing the heating power consumption; in addition, compared with an infrared emission layer with the thickness of several micrometers to tens of micrometers of the existing MEMS infrared light source, the invention also introduces the ultrathin (the thickness is not more than 1 micrometer) infrared emission layer, so that the thermal mass of the heating electrode layer is greatly reduced while the high infrared emission capability of the MEMS infrared light source is ensured, the modulation frequency of the MEMS infrared light source is improved, and the heating power consumption is further reduced.
Drawings
FIG. 1 is a schematic cross-sectional view of a MEMS infrared light source of conventional structure.
Fig. 2 is a schematic cross-sectional view of an MEMS infrared light source in embodiment 1 of the present invention.
Fig. 2-1 is a schematic cross-sectional view of step 1 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2-2 is a schematic cross-sectional view of step 2 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2-3 are schematic cross-sectional views of step 3 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2-4 are schematic cross-sectional views of step 4 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2 to 5 are schematic cross-sectional views of step 5 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2 to 6 are schematic cross-sectional views of step 6 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2 to 7 are schematic cross-sectional views of step 7 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Fig. 2 to 8 are schematic cross-sectional views of step 8 of a method for manufacturing an MEMS infrared light source according to embodiment 1 of the present invention.
Illustration of the drawings: 100-cavity structure, 101-substrate, 102-supporting thin film layer, 103-heating electrode layer, 104-heating electrode pad, 105-protective layer, 200-cavity structure, 201-substrate, 202-supporting thin film layer, 203-heating electrode layer, 204-isolation layer, 205-heating electrode pad, 206-infrared emission layer, 207-protective layer, 208-reflection layer.
Detailed Description
The invention is further described below with reference to the figures and examples.
Example 1:
fig. 2 is a schematic cross-sectional view of an MEMS infrared light source of the present invention, which includes a substrate 201, a supporting thin film layer 202, a heat generating electrode layer 203, an isolation layer 204, a heat generating electrode pad 205, an infrared emitting layer 206, a protective layer 207, and a reflective layer 208, and is characterized in that: the substrate 201 comprises a cavity structure 200, the supporting film layer 202 is arranged on the substrate 201 with the cavity structure, forming a four-sided clamped structure connection with the substrate 201, and forming a suspension region above the cavity structure 200, a heating electrode layer 203 is arranged above the supporting thin film layer 202, heating electrode pads 205 are arranged on two sides of the heating electrode layer 203 outside the suspension region, the heating electrode pads 205 are electrically connected with the heating electrode layer 203, an isolation layer 204 is provided above the heat generating electrode 203 except for a heat generating electrode pad 205, an infrared emission layer 206 is arranged on the corresponding isolation layer 204 above the suspension region, the protection layer 207 is positioned on the upper surfaces of the infrared emission layer, the infrared electrode layer and the supporting film layer except the heating electrode pad 205, the reflective layer 208 is located within the cavity structure 200 and is connected to the substrate on the sides of the cavity structure and the supporting film layer on the top of the cavity structure.
The reflective layer 208 is a thin film having a high reflectivity to infrared rays in a wavelength range of 2 to 14 μm, and includes a bragg reflective layer of Ag, Au, Cu, Al or a dielectric film.
The IR-emitting layer 206 is a rough-surfaced, 50-1000nm thick material with high IR emissivity, comprisingComprises NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound and ZrO2、HfO2、La1-xCaxCrO3(x is more than or equal to 0 and less than or equal to 0.5), carbon nanotubes and the like.
The heating electrode layer 203 is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB2PtSi and SnO2In this case, Ti, Cr, Ni, or the like may be introduced between the heat generating electrode layer and the supporting thin film layer to increase the adhesion between the heat generating electrode layer 203 and the supporting thin film layer 202.
The support film layer 202 is a multi-layer composite film structure composed of silicon oxide, silicon nitride or silicon nitride and silicon oxide.
The isolation layer 204 is one or a combination of several of silicon oxide, silicon nitride, and aluminum oxide.
The protective layer 207 is one or a combination of several of silicon oxide, silicon nitride, aluminum oxide and hafnium oxide.
The heating electrode pad 205 is one of an AlSi alloy, Au, Al, NiCr alloy, and NiV alloy.
The substrate 201 is monocrystalline silicon or quartz.
The invention discloses a manufacturing method of an MEMS infrared light source, which comprises the following steps:
(1) as shown in fig. 2-1, providing a substrate 201, depositing a support thin film layer 202 on the substrate 201, wherein the support thin film layer 202 is a silicon oxide, silicon nitride or a multilayer composite film structure composed of silicon nitride and silicon oxide, and the substrate 201 is monocrystalline silicon or quartz;
(2) as shown in fig. 2-2, a heat generating electrode layer 203 is formed on the support thin film layer 202, wherein the heat generating electrode layer 203 is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB2PtSi and SnO2One, Ti, Cr, Ni, etc. may be introduced between the heat generating electrode layer 203 and the support thin film layer 202 to increase the adhesion between the heat generating electrode layer 203 and the support thin film layer 202;
(3) as shown in fig. 2-3, an isolation layer 204 is formed on the heating electrode layer 203, wherein the isolation layer 204 is one or a combination of silicon oxide, silicon nitride and aluminum oxide;
(4) as shown in fig. 2-4, a heating electrode pad 205 is fabricated on both sides of the isolation layer 204 by a lift-off lithography method, the heating electrode pad 205 is electrically connected to the heating electrode layer 203, and the heating electrode pad is one of AlSi alloy, Au, Al, NiCr alloy, and NiV alloy;
(5) as shown in FIGS. 2 to 5, an infrared emission layer 206 is formed on the isolation layer inside the heat generating electrode pad 205, and the infrared emission layer 206 is made of a material having a rough surface, a thickness in the range of 50 to 1000nm, and a high infrared emission rate, and includes NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO, and the like2、HfO2、La1-xCaxCrO3(x is more than or equal to 0 and less than or equal to 0.5), carbon nanotubes and the like;
(6) as shown in fig. 2-6, depositing a protective layer 207 to cover the upper surfaces of the infrared emission layer 206, the infrared electrode layer and the support thin film layer, wherein the protective layer 207 is one or a combination of silicon oxide, silicon nitride, aluminum oxide and hafnium oxide;
(7) as shown in fig. 2-7, a cavity structure 200 is formed by etching the back surface of a substrate by using a double-sided alignment lithography technique, a floating region supported by a supporting thin film layer 202 is formed above the cavity structure 200, and the infrared emission layer 206 is located in an area inside the floating region, while the heating electrode pad 205 is located in an area outside the floating region, and a supporting function is formed by the supporting thin film layer 202 and the substrate 201 below the heating electrode pad 205 to facilitate bonding of the heating electrode pad 205 with an external circuit lead;
(8) as shown in fig. 2 to 8, a reflective layer 208 is formed in the cavity structure 200 on the back surface of the substrate 201, the reflective layer 208 is connected to the substrate on the side surface of the cavity structure 200 and the supporting thin film layer on the top surface of the cavity structure, and the reflective layer 208 is a thin film having high reflectivity for infrared rays in the wavelength range of 2 to 14 μm, and includes a bragg reflective layer of Ag, Au, Cu, Al or a dielectric film.
The manufacturing process of the infrared emission layer comprises two steps of deposition and surface treatment, wherein the infrared emission layer is deposited on the isolation layer on the inner side of the heating electrode bonding pad, and then the surface treatment is carried out on the infrared emission layer by a dry etching or wet etching method, so that the infrared emission layer with rough surface and thickness of 50-1000nm is obtained.
The foregoing merely represents preferred embodiments of the invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes, modifications and substitutions can be made without departing from the spirit of the present invention, and these are all within the scope of the present invention.
Claims (8)
1. The utility model provides a MEMS infrared light source, contains substrate, support thin film layer, the electrode layer that generates heat, isolation layer, the electrode pad that generates heat, infrared emission layer, protective layer and reflection stratum, its characterized in that: the substrate contains the cavity structure, support on the thin layer locates the substrate that has the cavity structure, form four sides with the substrate and prop up the structural connection admittedly to form the suspension district in cavity structure top support thin layer top and be equipped with the electrode layer that generates heat, be equipped with the electrode pad that generates heat in the electrode layer both sides that generate heat outside the suspension district, generate heat the electrode pad with the electrode layer that generates heat forms the electricity and connects the region that generates heat electrode layer top except that the electrode pad that generates heat is equipped with the isolation layer, is equipped with the infrared emission layer on the isolation layer that suspension district top corresponds, the protective layer is located infrared emission layer, infrared electrode layer and the support thin layer upper surface except that the electrode pad that generates heat, the reflection level is located the cavity structure, and is continuous with the substrate of cavity structure side and the support thin layer of cavity structure top surface.
2. A MEMS infrared light source as defined in claim 1 wherein: the reflecting layer is a film with high reflectivity to infrared rays with the wavelength range of 2-14 microns, and is a Bragg reflecting layer made of Ag, Au, Cu, Al or a dielectric film.
3. A MEMS infrared light source as defined in claim 1 wherein: the infrared emission layer has rough surface, thickness of 50-1000nm and high infrared emissivityThe material is NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO2、HfO2、La1-xCaxCrO3(x is more than or equal to 0 and less than or equal to 0.5) or carbon nanotubes.
4. A MEMS infrared light source as defined in claim 1 wherein: the heating electrode layer is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W and HfB2PtSi and SnO2In the above, a Ti layer, a Cr layer or a Ni layer having a thickness of 1 to 200nm may be introduced between the heat-generating electrode layer and the support thin film layer to increase the adhesion between the heat-generating electrode layer and the support thin film layer.
5. A MEMS infrared light source as defined in claim 1 wherein: the supporting thin film layer is of a multi-layer composite film structure consisting of silicon oxide, silicon nitride or silicon nitride and silicon oxide; the isolating layer is one or a combination of more of silicon oxide, silicon nitride and aluminum oxide; the protective layer is one or a combination of more of silicon oxide, silicon nitride, aluminum oxide and hafnium oxide; the heating electrode bonding pad is one of AlSi alloy, Au, Al, NiCr alloy and NiV alloy.
6. A MEMS infrared light source as defined in claim 1 wherein: the substrate is monocrystalline silicon or quartz.
7. Method for manufacturing a MEMS infrared light source according to any of claims 1-6, characterized in that it comprises the following steps:
(1) providing a substrate, and depositing a support thin film layer on the substrate;
(2) manufacturing a heating electrode layer on the supporting thin film layer, or manufacturing a Ti layer, a Cr layer or a Ni layer on the supporting thin film layer, and then manufacturing the heating electrode layer;
(3) manufacturing an isolation layer on the heating electrode layer;
(4) manufacturing heating electrode pads on two sides of the isolation layer by adopting a lift-off photoetching method, wherein the heating electrode pads are electrically connected with the heating electrode layer;
(5) manufacturing an infrared emission layer on the isolation layer on the inner side of the heating electrode bonding pad;
(6) depositing a protective layer, covering the upper surfaces of the infrared emission layer, the infrared electrode layer and the support film layer;
(7) corroding the back of the substrate by utilizing a double-sided alignment lithography technology to form a cavity structure, forming a suspension region supported by a support film layer above the cavity structure, enabling the infrared emission layer to be located in a region inside the suspension region, enabling the heating electrode pad to be located in a region outside the suspension region, and enabling the support film layer and the substrate to form a support effect below the heating electrode pad so as to facilitate bonding of the heating electrode pad and an external circuit lead;
(8) and manufacturing a reflecting layer in the cavity structure on the back surface of the substrate.
8. The method for manufacturing an MEMS infrared light source as claimed in claim 7, wherein the manufacturing process of the infrared emission layer includes two steps of deposition and surface treatment, and the infrared emission layer is first deposited on the isolation layer on the inner side of the heating electrode bonding pad, and then the surface treatment is performed on the infrared emission layer by a dry etching or wet etching method, so as to obtain the infrared emission layer with rough surface and thickness of 50-1000 nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115818556A (en) * | 2022-10-25 | 2023-03-21 | 微集电科技(苏州)有限公司 | MEMS infrared light source with improved photoelectric conversion efficiency |
| CN117776089A (en) * | 2024-02-27 | 2024-03-29 | 北京中科海芯科技有限公司 | Infrared light source device, infrared light source array and manufacturing method thereof |
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2021
- 2021-11-29 CN CN202111436494.4A patent/CN114249292A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115818556A (en) * | 2022-10-25 | 2023-03-21 | 微集电科技(苏州)有限公司 | MEMS infrared light source with improved photoelectric conversion efficiency |
| WO2024087270A1 (en) * | 2022-10-25 | 2024-05-02 | 微集电科技(苏州)有限公司 | Mems infrared light source with improved photoelectric conversion efficiency |
| CN117776089A (en) * | 2024-02-27 | 2024-03-29 | 北京中科海芯科技有限公司 | Infrared light source device, infrared light source array and manufacturing method thereof |
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