CN111490748A - Film bulk acoustic resonator - Google Patents
Film bulk acoustic resonator Download PDFInfo
- Publication number
- CN111490748A CN111490748A CN202010128263.6A CN202010128263A CN111490748A CN 111490748 A CN111490748 A CN 111490748A CN 202010128263 A CN202010128263 A CN 202010128263A CN 111490748 A CN111490748 A CN 111490748A
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- temperature compensation
- compensation layer
- layer
- electrode
- scatterer
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- 239000013078 crystal Substances 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention provides a film bulk acoustic resonator, comprising: the temperature compensation device comprises an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, an intermediate temperature compensation layer and a lower temperature compensation layer; the upper, middle and lower temperature compensation layers are embedded in the upper electrode, the piezoelectric layer and the lower electrode; the upper, middle and lower temperature compensation layers are respectively composed of columnar structures in any shapes; wherein, the columnar structures are periodically distributed to form an upper scatterer, a middle scatterer and a lower scatterer; the scatterer structures of the upper, middle and lower temperature compensation layers respectively form an upper, middle and lower phonon crystal structure with the upper electrode, the piezoelectric layer and the lower electrode. According to the invention, a multilayer temperature compensation structure is embedded, so that a multilayer phononic crystal structure can be formed with the piezoelectric layer, on one hand, the temperature frequency coefficient of the resonator can be changed, and the zero drift of the frequency along with the temperature is realized; on the other hand, the phononic crystal structure can shield and inhibit noise waves in a specific working frequency range, and the Q value of the resonator can be greatly improved.
Description
Technical Field
The invention relates to the field of bulk acoustic wave resonators, in particular to a film bulk acoustic wave resonator.
Background
With the advent of the 5G era, Bulk Acoustic Wave (BAW) filters have been widely used in the field of mobile radio frequencies. BAW can provide a high Q value, a steep curve, low insertion loss, and high isolation characteristics compared to a Surface Acoustic Wave (SAW) filter.
The traditional film bulk acoustic resonator is of a three-layer composite structure consisting of a top electrode, a piezoelectric layer and a bottom electrode, and when radio-frequency voltage is applied to the upper electrode and the lower electrode, a BAW resonator can convert electric energy into mechanical energy. While the thickness extensional mode is excited, some lateral vibration modes (parasitic modes) are also excited, thereby affecting the performance of the resonator. On the other hand, most of piezoelectric materials AlN and ZnO used for manufacturing BAW resonators, and electrode materials Mo and Al are negative temperature coefficient materials. Furthermore, when the external operating temperature changes, the operating frequency of the resonator may drift with the temperature change.
Disclosure of Invention
The invention aims to solve the technical problem of providing a film bulk acoustic resonator containing multiple temperature compensation layers aiming at the defects of parasitic modes and frequency drift along with temperature in the prior art. On the basis, the periodically distributed temperature compensation structure further forms a phononic crystal structure for suppressing a parasitic mode.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the present invention provides a film bulk acoustic resonator, comprising: the temperature compensation device comprises an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, an intermediate temperature compensation layer and a lower temperature compensation layer;
the upper temperature compensation layer is embedded in the upper electrode, the middle temperature compensation layer is embedded in the piezoelectric layer, and the lower temperature compensation layer is embedded in the lower electrode;
the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are respectively composed of columnar structures in any shapes; wherein, the intervals of the columnar structures in the same plane are periodically distributed to form an upper scatterer, a middle scatterer and a lower scatterer;
furthermore, the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are mutually independent, and the upper scattering body, the middle scattering body and the lower scattering body are different in interval and are alternately distributed.
The upper temperature compensation layer and the lower temperature compensation layer are contained in the upper electrode and the lower electrode or penetrate through the upper electrode and the lower electrode, and the middle temperature compensation layer penetrates through the piezoelectric layer;
furthermore, the scatterer structure of the upper temperature compensation layer and the upper electrode form an upper phonon crystal structure;
the scattering body structure of the middle temperature compensation layer and the piezoelectric layer form a middle phonon crystal structure;
the scatterer structure of the lower temperature compensation layer and the lower electrode form a lower phonon crystal structure;
wherein, the upper, middle and lower phononic crystal structures can form three groups of band gap structures;
further, the structure of the mesophonon crystal is a two-dimensional structure;
the upper phonon crystal structure and the lower phonon crystal structure are one-dimensional structures or two-dimensional structures;
further, the temperature compensation structure is a low acoustic impedance thin film material with a negative temperature coefficient, comprising SiO2；
Further, the piezoelectric layer is a thin film material with piezoelectric effect, including aluminum nitride, zinc oxide, and lithium niobate.
Further, the bottom electrode and the top electrode are both metal films, and the metal films are made of metal materials including molybdenum, platinum and gold.
The invention has the following beneficial effects: according to the film bulk acoustic resonator, the multilayer temperature compensation structure is embedded, so that a multilayer phononic crystal structure can be formed with the piezoelectric layer, on one hand, the temperature frequency coefficient of the resonator can be changed, and the zero drift of the frequency along with the temperature is realized; on the other hand, the phonon crystal structure utilizes the material characteristic difference to generate a phonon band gap structure, and noise waves are shielded and suppressed within a specific working frequency range.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a cross-sectional view of one embodiment of the present invention;
FIG. 2 is a cross-sectional view of another embodiment of the present invention;
FIG. 3 is a top view of one embodiment of the present invention;
FIG. 4 is a cross-sectional view of another embodiment of the present invention;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1:
fig. 1 provides a thin film bulk acoustic resonator 100 comprising: an upper electrode 201, a piezoelectric layer 202, a lower electrode 203, an upper temperature compensation layer 204, an intermediate temperature compensation layer 205, and a lower temperature compensation layer 206;
wherein, the upper temperature compensation layer 204 is embedded in the upper electrode 201, the middle temperature compensation layer 205 is embedded in the piezoelectric layer 202, and the lower temperature compensation layer 206 is embedded in the lower electrode 203;
the upper temperature compensation layer 204, the middle temperature compensation layer 205, and the lower temperature compensation layer 206 are respectively composed of columnar structures of arbitrary shapes; wherein, the intervals of the columnar structures in the same plane are periodically distributed to form an upper scatterer, a middle scatterer and a lower scatterer;
the upper temperature compensation layer 204, the middle temperature compensation layer 205 and the lower temperature compensation layer 206 are independent from each other, and the upper, middle and lower scatterers have different intervals and are alternately distributed.
Wherein, the upper temperature compensation layer 204 and the lower temperature compensation layer 206 penetrate through the upper electrode 201 and the lower electrode 202, and the middle temperature compensation layer 205 penetrates through the piezoelectric layer 202;
the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 form an upper phonon crystal structure;
the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 form a middle phonon crystal structure;
the scatterer structure of the lower temperature compensation layer 206 and the lower electrode 203 form a lower phonon crystal structure;
wherein, the upper, middle and lower phononic crystal structures can form three groups of band gap structures;
example 2:
fig. 2 provides a thin film bulk acoustic resonator 100 comprising: an upper electrode 201, a piezoelectric layer 202, a lower electrode 203, an upper temperature compensation layer 204, an intermediate temperature compensation layer 205, and a lower temperature compensation layer 206;
wherein, the upper temperature compensation layer 204 is embedded in the upper electrode 201, the middle temperature compensation layer 205 is embedded in the piezoelectric layer 202, and the lower temperature compensation layer 206 is embedded in the lower electrode 203;
the upper temperature compensation layer 204, the middle temperature compensation layer 205, and the lower temperature compensation layer 206 are respectively composed of columnar structures of arbitrary shapes; wherein, the intervals of the columnar structures in the same plane are periodically distributed to form an upper scatterer, a middle scatterer and a lower scatterer;
the upper temperature compensation layer 204, the middle temperature compensation layer 205 and the lower temperature compensation layer 206 are independent from each other, and the upper, middle and lower scatterers have different intervals and are alternately distributed.
Wherein, the upper temperature compensation layer 204 and the lower temperature compensation layer 206 are contained inside the upper electrode 201 and the lower electrode 202, and the middle temperature compensation layer 205 penetrates through the piezoelectric layer 202;
the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 form an upper phonon crystal structure;
the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 form a middle phonon crystal structure;
the scatterer structure of the lower temperature compensation layer 206 and the lower electrode 203 form a lower phonon crystal structure;
wherein, the upper, middle and lower phononic crystal structures can form three groups of band gap structures;
fig. 3 is a top view, and it can be seen from fig. 1 that the upper phonon crystal structure formed by the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 is a one-dimensional structure, and the middle phonon crystal structure formed by the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 is a two-dimensional structure.
Fig. 4 is a top view, and it can be seen from fig. 1 that the upper phonon crystal structure formed by the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 is a two-dimensional structure, and the phonon crystal structure formed by the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 is a two-dimensional structure.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (8)
1. A thin film bulk acoustic resonator, comprising: the temperature compensation device comprises an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, an intermediate temperature compensation layer and a lower temperature compensation layer; wherein:
the upper temperature compensation layer is embedded in the upper electrode, the middle temperature compensation layer is embedded in the piezoelectric layer, and the lower temperature compensation layer is embedded in the lower electrode;
the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are respectively composed of columnar structures in any shapes; wherein, the intervals of the columnar structures in the same plane are periodically distributed to form an upper scatterer, a middle scatterer and a lower scatterer;
the scatterer structure of the upper temperature compensation layer and the upper electrode form an upper phonon crystal structure;
the scattering body structure of the middle temperature compensation layer and the piezoelectric layer form a middle phonon crystal structure;
the scatterer structure of the lower temperature compensation layer and the lower electrode form a lower phonon crystal structure.
2. The film bulk acoustic resonator according to claim 1, wherein the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are independent of each other, and the upper, middle and lower scattering bodies are spaced at different intervals and alternately distributed.
3. The film bulk acoustic resonator according to claim 1, wherein the upper temperature compensation layer and the lower temperature compensation layer are contained within or through the upper and lower electrodes, and the middle temperature compensation layer extends through the piezoelectric layer.
4. The film bulk acoustic resonator of claim 1, wherein the upper, middle and lower phononic crystal structures form three sets of bandgap structures.
5. The film bulk acoustic resonator of claim 1, wherein the middle phonon crystal structure is a two-dimensional structure, and the upper phonon crystal structure and the lower phonon crystal structure are one-dimensional structures or two-dimensional structures.
6. The film bulk acoustic resonator of claim 1, wherein the temperature compensation structure is a negative temperature coefficient low acoustic impedance film material comprising SiO2。
7. The film bulk acoustic resonator according to claim 1, wherein the piezoelectric layer is a thin film material having piezoelectric effect, and comprises aluminum nitride, zinc oxide, and lithium niobate.
8. The film bulk acoustic resonator of claim 1, wherein the bottom electrode and the top electrode are both metal films, and the metal films are made of metal materials including molybdenum, platinum and gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010128263.6A CN111490748B (en) | 2020-02-28 | 2020-02-28 | Film bulk acoustic resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010128263.6A CN111490748B (en) | 2020-02-28 | 2020-02-28 | Film bulk acoustic resonator |
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| CN111490748A true CN111490748A (en) | 2020-08-04 |
| CN111490748B CN111490748B (en) | 2024-06-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367058A (en) * | 2020-10-27 | 2021-02-12 | 武汉大学 | Film bulk acoustic resonator packaged by phononic crystal structure |
| CN114567285A (en) * | 2022-03-03 | 2022-05-31 | 武汉敏声新技术有限公司 | Interdigital resonator and preparation method thereof |
| CN115296638A (en) * | 2022-08-22 | 2022-11-04 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
| CN115296638B (en) * | 2022-08-22 | 2024-07-05 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
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|---|---|---|---|---|
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| CN114567285A (en) * | 2022-03-03 | 2022-05-31 | 武汉敏声新技术有限公司 | Interdigital resonator and preparation method thereof |
| CN115296638A (en) * | 2022-08-22 | 2022-11-04 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
| CN115296638B (en) * | 2022-08-22 | 2024-07-05 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
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| CN111490748B (en) | 2024-06-04 |
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