CN111490748B - Film bulk acoustic resonator - Google Patents
Film bulk acoustic resonator Download PDFInfo
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- CN111490748B CN111490748B CN202010128263.6A CN202010128263A CN111490748B CN 111490748 B CN111490748 B CN 111490748B CN 202010128263 A CN202010128263 A CN 202010128263A CN 111490748 B CN111490748 B CN 111490748B
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- temperature compensation
- compensation layer
- electrode
- layer
- phonon crystal
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- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000004038 photonic crystal Substances 0.000 abstract description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a film bulk acoustic resonator, comprising: an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, a middle temperature compensation layer and a lower temperature compensation layer; the upper, middle and lower temperature compensation layers are embedded in the upper electrode, the piezoelectric layer and the lower electrode; the upper, middle and lower temperature compensation layers are respectively composed of columnar structures with arbitrary shapes; wherein, the columnar structures are periodically distributed to form upper, middle and lower scatterers; the upper, middle and lower temperature compensating layers and the upper, middle and lower phonon crystal structures are respectively formed by the upper electrode, the piezoelectric layer and the lower electrode. The multilayer photonic crystal structure can be formed by embedding the multilayer temperature compensation structure and the piezoelectric layer, so that on one hand, the temperature frequency coefficient of the resonator can be changed, and the zero drift of the frequency along with the temperature is realized; on the other hand, the phonon crystal structure can shield and inhibit clutter in a specific working frequency range, and the Q value of the resonator can be greatly improved.
Description
Technical Field
The invention relates to the field of bulk acoustic wave resonators, in particular to a film bulk acoustic wave resonator.
Background
With the advent of the 5G age, bulk Acoustic Wave (BAW) filters are widely used in the mobile radio frequency field. BAWs can provide high Q values, steep curves, low insertion loss, and higher isolation characteristics than Surface Acoustic Wave (SAW) filters.
The traditional film bulk acoustic resonator is composed of a three-layer composite structure consisting of a top electrode, a piezoelectric layer and a bottom electrode, and when radio frequency voltage is applied to the upper electrode and the lower electrode, the BAW resonator can convert electric energy into mechanical energy. At the same time as the thickness extension mode is excited, some lateral vibration modes (spurious modes) are excited, thereby affecting the performance of the resonator. On the other hand, most of piezoelectric materials AlN and ZnO, electrode materials Mo and Al, and the like used for manufacturing BAW resonators are negative temperature coefficient materials. Further, when the external operating temperature changes, the operating frequency of the resonator shifts with a change in temperature.
Disclosure of Invention
The invention aims to solve the technical problem that parasitic modes and frequency drift along with temperature in the prior art, and provides a film bulk acoustic resonator with a plurality of temperature compensation layers. On this basis, the periodically distributed temperature compensation structure further forms a phonon crystal structure for suppressing parasitic modes.
The technical scheme adopted for solving the technical problems is as follows:
The invention provides a film bulk acoustic resonator, comprising: an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, a middle temperature compensation layer and a lower temperature compensation layer;
wherein, the upper temperature compensation layer is embedded in the upper electrode, the middle temperature compensation layer is embedded in the piezoelectric layer, and the lower temperature compensation layer is embedded in the lower electrode;
the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are respectively composed of columnar structures with arbitrary shapes; the cylindrical structures are periodically distributed at intervals in the same plane to form upper, middle and lower scatterers;
further, the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are mutually independent, and the upper, middle and lower scatterers are different in distance and are alternately distributed.
Wherein the upper temperature compensation layer and the lower temperature compensation layer are contained in the upper electrode and the lower electrode or penetrate through the upper electrode and the lower electrode, and the middle temperature compensation layer penetrates through the piezoelectric layer;
Further, the scatterer structure of the upper temperature compensation layer and the upper electrode form an upper phonon crystal structure;
the scattering body structure of the medium temperature compensation layer and the piezoelectric layer form a medium phonon crystal structure;
the lower phonon crystal structure is formed by the lower electrode and the scatterer structure of the lower temperature compensation layer;
Wherein, the upper, middle and lower phonon crystal structures can form three groups of band gap structures;
Further, the mesophonon crystal structure is a two-dimensional structure;
The upper phonon crystal structure and the lower phonon crystal structure are of a one-dimensional structure or a two-dimensional structure;
Further, the temperature compensation structure is a low acoustic impedance film material with negative temperature coefficient, comprising SiO 2;
further, the piezoelectric layer is a thin film material with piezoelectric effect, and comprises aluminum nitride, zinc oxide and lithium niobate.
Further, the bottom electrode and the top electrode are both metal films, and the metal films are made of metal materials including molybdenum, platinum and gold.
The invention has the beneficial effects that: according to the film bulk acoustic resonator, a multilayer photonic crystal structure can be formed by embedding the multilayer temperature compensation structure and the piezoelectric layer, so that on one hand, the temperature frequency coefficient of the resonator can be changed, and zero drift of frequency along with temperature is realized; on the other hand, the phonon crystal structure utilizes the material characteristic difference to generate a phonon band gap structure, and the noise wave is shielded and suppressed in a specific working frequency range.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a cross-sectional view of one embodiment of the present invention;
FIG. 2 is a cross-sectional view of another embodiment of the present invention;
FIG. 3 is a top view of one embodiment of the present invention;
FIG. 4 is a cross-sectional view of another embodiment of the present invention;
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1:
fig. 1 provides a thin film bulk acoustic resonator 100 comprising: an upper electrode 201, a piezoelectric layer 202, a lower electrode 203, an upper temperature compensation layer 204, a middle temperature compensation layer 205, and a lower temperature compensation layer 206;
wherein, the upper temperature compensation layer 204 is embedded in the upper electrode 201, the middle temperature compensation layer 205 is embedded in the piezoelectric layer 202, and the lower temperature compensation layer 206 is embedded in the lower electrode 203;
The upper temperature compensation layer 204, the middle temperature compensation layer 205, and the lower temperature compensation layer 206 are composed of columnar structures each having an arbitrary shape; the cylindrical structures are periodically distributed at intervals in the same plane to form upper, middle and lower scatterers;
The upper temperature compensation layer 204, the middle temperature compensation layer 205 and the lower temperature compensation layer 206 are independent of each other, and the upper, middle and lower scatterers are different in spacing and alternately distributed.
Wherein the upper temperature compensation layer 204 and the lower temperature compensation layer 206 penetrate the upper electrode 201 and the lower electrode 202, and the middle temperature compensation layer 205 penetrates the piezoelectric layer 202;
the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 constitute an upper phonon crystal structure;
the scatterer structure of the medium temperature compensation layer 205 and the piezoelectric layer 202 form a medium phonon crystal structure;
the scatterer structure of the lower temperature compensation layer 206 and the lower electrode 203 constitute a lower phonon crystal structure;
Wherein, the upper, middle and lower phonon crystal structures can form three groups of band gap structures;
example 2:
Fig. 2 provides a thin film bulk acoustic resonator 100 comprising: an upper electrode 201, a piezoelectric layer 202, a lower electrode 203, an upper temperature compensation layer 204, a middle temperature compensation layer 205, and a lower temperature compensation layer 206;
wherein, the upper temperature compensation layer 204 is embedded in the upper electrode 201, the middle temperature compensation layer 205 is embedded in the piezoelectric layer 202, and the lower temperature compensation layer 206 is embedded in the lower electrode 203;
The upper temperature compensation layer 204, the middle temperature compensation layer 205, and the lower temperature compensation layer 206 are composed of columnar structures each having an arbitrary shape; the cylindrical structures are periodically distributed at intervals in the same plane to form upper, middle and lower scatterers;
The upper temperature compensation layer 204, the middle temperature compensation layer 205 and the lower temperature compensation layer 206 are independent of each other, and the upper, middle and lower scatterers are different in spacing and alternately distributed.
Wherein the upper temperature compensation layer 204 and the lower temperature compensation layer 206 are included inside the upper electrode 201 and the lower electrode 202, and the middle temperature compensation layer 205 penetrates the piezoelectric layer 202;
the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 constitute an upper phonon crystal structure;
the scatterer structure of the medium temperature compensation layer 205 and the piezoelectric layer 202 form a medium phonon crystal structure;
the scatterer structure of the lower temperature compensation layer 206 and the lower electrode 203 constitute a lower phonon crystal structure;
Wherein, the upper, middle and lower phonon crystal structures can form three groups of band gap structures;
Fig. 3 is a top view, and it can be seen in conjunction with fig. 1 that the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 form an upper phonon crystal structure with a one-dimensional structure, and the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 form a middle phonon crystal structure with a two-dimensional structure.
Fig. 4 is a top view, and it can be seen in conjunction with fig. 1 that the scatterer structure of the upper temperature compensation layer 204 and the upper electrode 201 form an upper phonon crystal structure with a two-dimensional structure, and the scatterer structure of the middle temperature compensation layer 205 and the piezoelectric layer 202 form a middle phonon crystal structure with a two-dimensional structure.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
Claims (6)
1. A thin film bulk acoustic resonator, comprising: an upper electrode, a piezoelectric layer, a lower electrode, an upper temperature compensation layer, a middle temperature compensation layer and a lower temperature compensation layer; wherein: the upper temperature compensation layer is embedded in the upper electrode, the middle temperature compensation layer is embedded in the piezoelectric layer, and the lower temperature compensation layer is embedded in the lower electrode; the upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are respectively composed of columnar structures with arbitrary shapes; the cylindrical structures are periodically distributed at intervals in the same plane to form upper, middle and lower scatterers; the upper phonon crystal structure is formed by the scatterer structure of the upper temperature compensation layer and the upper electrode; the scattering body structure of the medium temperature compensation layer and the piezoelectric layer form a medium phonon crystal structure; the lower phonon crystal structure is formed by the lower electrode and the scatterer structure of the lower temperature compensation layer;
The upper temperature compensation layer, the middle temperature compensation layer and the lower temperature compensation layer are mutually independent, and the upper, middle and lower scatterers are different in spacing and are alternately distributed;
The upper temperature compensation layer and the lower temperature compensation layer penetrate through the upper electrode and the lower electrode, and the middle temperature compensation layer penetrates through the piezoelectric layer.
2. The thin film bulk acoustic resonator of claim 1, wherein the upper, middle and lower phonon crystal structures form three sets of bandgap structures.
3. The thin film bulk acoustic resonator of claim 1, wherein the middle phonon crystal structure is a two-dimensional structure, and the upper phonon crystal structure and the lower phonon crystal structure are one-dimensional structures or two-dimensional structures.
4. The thin film bulk acoustic resonator of claim 1 wherein the temperature compensating structure is a negative temperature coefficient low acoustic impedance thin film material comprising SiO2.
5. The thin film bulk acoustic resonator of claim 1, wherein the piezoelectric layer is a thin film material having a piezoelectric effect, comprising aluminum nitride, zinc oxide, lithium niobate.
6. The thin film bulk acoustic resonator of claim 1, wherein the bottom electrode and the top electrode are both metal films, and the metal films are metal materials including molybdenum, platinum, and gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010128263.6A CN111490748B (en) | 2020-02-28 | 2020-02-28 | Film bulk acoustic resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010128263.6A CN111490748B (en) | 2020-02-28 | 2020-02-28 | Film bulk acoustic resonator |
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| Publication Number | Publication Date |
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| CN111490748A CN111490748A (en) | 2020-08-04 |
| CN111490748B true CN111490748B (en) | 2024-06-04 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367058A (en) * | 2020-10-27 | 2021-02-12 | 武汉大学 | Film bulk acoustic resonator packaged by phononic crystal structure |
| CN114567285A (en) * | 2022-03-03 | 2022-05-31 | 武汉敏声新技术有限公司 | Interdigital resonator and preparation method thereof |
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| TW200522513A (en) * | 2003-12-30 | 2005-07-01 | Ind Tech Res Inst | Noise reduction method of filter |
| US8501515B1 (en) * | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
| US8525619B1 (en) * | 2010-05-28 | 2013-09-03 | Sandia Corporation | Lateral acoustic wave resonator comprising a suspended membrane of low damping resonator material |
| US8624471B1 (en) * | 2010-07-30 | 2014-01-07 | Georgia Tech Research Corporation | Piezoelectric-on-semiconductor micromechanical resonators with linear acoustic bandgap tethers |
| JP2014030136A (en) * | 2012-07-31 | 2014-02-13 | Taiyo Yuden Co Ltd | Acoustic wave device |
| CN109219896A (en) * | 2016-06-02 | 2019-01-15 | 索泰克公司 | Mixed structure for surface acoustic wave device |
| CN110460320A (en) * | 2019-08-06 | 2019-11-15 | 中国电子科技集团公司第二十六研究所 | Film layer structure, its manufacturing method and the filter including the film layer structure |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9621126B2 (en) * | 2014-10-22 | 2017-04-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer |
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| US8525619B1 (en) * | 2010-05-28 | 2013-09-03 | Sandia Corporation | Lateral acoustic wave resonator comprising a suspended membrane of low damping resonator material |
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| US8501515B1 (en) * | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
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