CN113114158A - Lamb wave resonator and elastic wave device - Google Patents
Lamb wave resonator and elastic wave device Download PDFInfo
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- CN113114158A CN113114158A CN202110512905.7A CN202110512905A CN113114158A CN 113114158 A CN113114158 A CN 113114158A CN 202110512905 A CN202110512905 A CN 202110512905A CN 113114158 A CN113114158 A CN 113114158A
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims description 169
- 239000010409 thin film Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 27
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides a lamb wave resonator and an elastic wave device, wherein the lamb wave resonator comprises: a support substrate; a piezoelectric film formed on an upper surface of the support substrate; the interdigital electrode is formed on the upper surface of the piezoelectric film; a high thermal conductivity film formed at least on an upper surface of the piezoelectric film not covered by the interdigital electrode and/or formed between the support substrate and the piezoelectric film; and the air cavity is formed in the supporting substrate, and the piezoelectric film and the high-heat-conductivity film in the area where the interdigital electrode is located are suspended above the supporting substrate. The lamb wave resonator and the elastic wave device provided by the invention solve the problem of low power capacity of the existing device.
Description
Technical Field
The invention belongs to the technical field of microelectronic devices, and particularly relates to a lamb wave resonator and an elastic wave device.
Background
With the application of high-frequency and relatively large-bandwidth frequency bands such as 5G n77, n78, n79, and WIFI 6, researchers have made higher demands on the overall performance of elastic wave devices such as filters and duplexers. The i.h.p. SAW technology and its application to the micro-acoustic components, published by Tsutomu Takai, proposes the i.h.p. SAW technology, but the surface acoustic wave device based on the solid-state assembly type is limited by the low acoustic velocity of the supporting substrate, and it is difficult to excite the acoustic wave mode of higher acoustic velocity, and thus it is difficult to operate above 3 GHz.
And through forming the air cavity in supporting the substrate to stimulate the acoustic wave mode of higher sound velocity, although can improve the operating frequency of the device, and have greater electromechanical coupling coefficient, but while inputting high power, produce a large amount of heat and nonlinear effect easily, thus cause the irreversible damage of the device.
Disclosure of Invention
In view of the above-described drawbacks of the prior art, an object of the present invention is to provide a lamb wave resonator and an elastic wave device for solving the problem of low power capacity of the conventional device.
To achieve the above and other related objects, the present invention provides a lamb wave resonator including:
a support substrate;
a piezoelectric film formed on an upper surface of the support substrate;
the interdigital electrode is formed on the upper surface of the piezoelectric film;
a high thermal conductivity film formed at least on an upper surface of the piezoelectric film not covered by the interdigital electrode and/or formed between the support substrate and the piezoelectric film;
and the air cavity is formed in the supporting substrate, and the piezoelectric film and the high-heat-conductivity film in the area where the interdigital electrode is located are suspended above the supporting substrate.
Optionally, the high thermal conductivity thin film is formed between the support substrate and the piezoelectric thin film; or, the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode; or, the high-heat-conductivity film is formed on the upper surface of the whole piezoelectric film; or, the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode; or, the high-thermal-conductivity film is formed between the supporting substrate and the piezoelectric film, and is also formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode; or, the high-heat-conductivity film is formed between the support substrate and the piezoelectric film and is also formed on the upper surface of the whole piezoelectric film; or, the high-thermal-conductivity film is formed between the supporting substrate and the piezoelectric film, and is also formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode.
Optionally, the lamb wave resonator further comprises a dielectric layer; when the high-heat-conductivity film is formed between the supporting substrate and the piezoelectric film, the dielectric layer is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode; when the high-heat-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode, or when the high-heat-conductivity film is formed on the upper surface of the whole piezoelectric film, the dielectric layer is formed on the upper surface of the high-heat-conductivity film and the surface of the interdigital electrode; when the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode, the dielectric layer is formed on the upper surface of the high-thermal-conductivity film.
Optionally, the high thermal conductivity thin film has a thermal conductivity greater than 100W/(m &).
Optionally, the thickness of the high thermal conductivity thin film and the thickness of the piezoelectric thin film satisfy the following relationship: less than or equal to 200nm (h)1+h2) Less than or equal to 1200nm, and h1/h2<2.5; wherein h is1Is the thickness of the high thermal conductivity film, h2Is the thickness of the piezoelectric film.
Optionally, the center-to-center distance between two adjacent fingers in the interdigital electrodes satisfies the following relationship: 2 (h)1+h2)<p<20(h1+h2) (ii) a Wherein p is the center-to-center distance between adjacent interdigital electrodes, h1Is the thickness of the high thermal conductivity film, h2Is the thickness of the piezoelectric film.
Optionally, the metallization rate of the interdigital electrode is greater than 5% and less than 40%.
Optionally, the piezoelectric film is single crystal lithium niobate or single crystal lithium tantalate.
The present invention also provides an elastic wave device including: at least one lamb wave resonator as described in any one of the above.
Optionally, the elastic wave device is a filter; the filter comprises N lamb wave resonators connected in series and M lamb wave resonators connected in parallel; or the filter comprises N lamb wave resonators connected in series and M inductance-capacitance integrated passive structures, and the inductance-capacitance integrated passive structures are connected between any two lamb wave resonators; wherein N is a positive integer greater than or equal to 2, and M is a positive integer greater than or equal to 1.
Optionally, the elastic wave device is a multiplexer, and the multiplexer includes at least one filter.
As described above, according to the lamb wave resonator and the elastic wave device of the present invention, by providing a single piezoelectric thin film as a composite thin film formed by a piezoelectric thin film and a high thermal conductivity thin film, a device can have a higher power capacity while maintaining a high operating frequency, a high electromechanical coupling coefficient, and a high mechanical strength; meanwhile, a second-order antisymmetric lamb wave mode with high electromechanical coupling coefficient, which cannot be generated in a single piezoelectric film, can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a lamb wave resonator according to the present invention.
Fig. 2 shows a top view of the lamb wave resonator of fig. 1.
Fig. 3 is a schematic diagram showing a strain field excited by interdigital electrodes in the lamb wave resonator of fig. 1.
FIG. 4 is a plot of electromechanical coupling coefficients and acoustic velocity as a function of piezoelectric film thickness for the lamb wave resonator of FIG. 1 in the first-order and second-order anti-symmetric lamb wave modes.
In fig. 5, (a) is a thermal simulation diagram of the device structure of comparative example 1, (b) is a thermal simulation diagram of the device structure of example 1, and (c) is a thermal simulation diagram of the device structure of the control group.
FIG. 6 shows that the thickness of the piezoelectric thin film in the device structure described in comparative example 1 and the device structure described in example 1 is 800nm (h)1/h20.25) and 350nm (h)1/h21.86) is shown.
Fig. 7 is a schematic diagram of a second structure of the lamb wave resonator according to the invention.
Fig. 8(a) is a schematic thermal simulation of the device structure of comparative example 2, and (b) is a schematic thermal simulation of the device structure of example 2.
Fig. 9 shows a schematic diagram of simulated admittance curves for the device structure described in comparative example 2 and the device structure described in example 2.
Fig. 10 is a schematic diagram of a third structure of the lamb wave resonator according to the invention.
Fig. 11 is a schematic diagram showing a fourth structure of the lamb wave resonator according to the invention.
Fig. 12 is a schematic diagram of a filter according to the present invention.
Fig. 13 is a schematic diagram of another structure of the filter according to the present invention.
Fig. 14 is a schematic diagram showing the admittance curves and filter insertion loss curves of the lamb wave resonators in the filter structure of fig. 12.
Description of the element reference numerals
100 lamb wave resonator
101 supporting substrate
102 piezoelectric film
103 interdigital electrode
104 high thermal conductivity film
105 air chamber
106 dielectric layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 14. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As shown in fig. 1, 2, 7, 10, and 11, the present embodiment provides a lamb wave resonator, where the lamb wave resonator 100 includes:
a support substrate 101;
a piezoelectric film 102 formed on the upper surface of the supporting substrate 101;
an interdigital electrode 103 formed on the upper surface of the piezoelectric film 102;
a high thermal conductivity film 104 formed at least on the upper surface of the piezoelectric film 102 uncovered by the interdigital electrode 103 and/or formed between the supporting substrate 101 and the piezoelectric film 102;
and the air cavity 105 is formed in the supporting substrate 101, and suspends the piezoelectric film 102 and the high-thermal-conductivity film 104 in the region where the interdigital electrode 103 is located above the supporting substrate 101.
In the lamb wave resonator of this example, a composite film is mainly formed by the piezoelectric film 102 and the high thermal conductivity film 104, and a first-order antisymmetric lamb wave and a second-order antisymmetric lamb wave are excited in the composite film by using interdigital electrodes (specifically, as shown in fig. 3).
Specifically, the supporting substrate 101 may be a single material layer, or may be a stacked structure composed of at least two different material layers; among them, the supporting substrate 101 is preferably an easily-etched, high-resistivity material such as silicon (Si), silicon oxide (SiO)2) Or a stack of both (SiO)2Si), etc.
Specifically, the piezoelectric film 102 is single-crystal lithium niobate or single-crystal lithium tantalate so as to improve the electromechanical coupling coefficient and quality factor Q of the device; of course, other single crystal piezoelectric materials having excellent performance in terms of electromechanical coupling coefficient and quality factor Q are also applicable to the present example.
Specifically, the interdigital electrode 103 may be a single metal layer, or may be a stacked structure composed of at least two different metal layers, and the material of the metal layer may be a single metal material or an alloy material, such as metal aluminum, copper aluminum alloy, and the like. In order to excite the antisymmetric lamb wave more effectively and optimize the heat dissipation capability of the device, the center-to-center distance between two adjacent fingers in the interdigital electrode 103 can satisfy the following relationship: 2 (h)1+h2)<p<20(h1+h2) (ii) a Wherein p is the center-to-center distance between adjacent interdigital electrodes, h1Is the thickness of the high thermal conductivity film, h2Is the thickness of the piezoelectric film; the metallization rate of the interdigital electrode can also be more than 5% and less than 40%; of course, both may be optimized more simultaneously. Alternatively, 3.5 (h)1+h2)<p<10(h1+h2) The metallization rate of the interdigital electrode is more than 15% and less than 35%.
Specifically, the high thermal conductivity film 104 is formed between the supporting substrate 101 and the piezoelectric film 102 (specifically, as shown in fig. 1); alternatively, the high thermal conductivity film 104 is formed on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103 (as shown in fig. 7 in particular); alternatively, the high thermal conductivity film 104 is formed on the entire upper surface of the piezoelectric film 102 (specifically, as shown in fig. 10); alternatively, the high thermal conductivity thin film 104 is in the form ofThe upper surface of the piezoelectric film 102 and the surface of the interdigital electrode 103 which are not covered by the interdigital electrode 103 (as shown in fig. 11 in particular); alternatively, the high thermal conductivity film 104 is formed between the supporting substrate 101 and the piezoelectric film 102, and is also formed on the upper surface (not shown in the figure) of the piezoelectric film 102 uncovered by the interdigital electrode 103; alternatively, the high thermal conductivity film 104 is formed between the supporting substrate 101 and the piezoelectric film 102, and is also formed on the entire upper surface (not shown) of the piezoelectric film 102; alternatively, the high thermal conductivity film 104 is formed between the supporting substrate 101 and the piezoelectric film 102, and is also formed on the upper surface of the piezoelectric film 102 and the surface of the interdigital electrode 103 (not shown in the figure) which are not covered by the interdigital electrode 103. It should be noted that, when the high thermal conductivity film 104 is simultaneously formed on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103, or on the entire upper surface of the piezoelectric film 102, or on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103 and on the surface of the interdigital electrode 103, the high thermal conductivity film 104 includes two layers of high thermal conductivity materials, one of which is formed between the supporting substrate 101 and the piezoelectric film 102, the other of which is formed on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103, or on the entire upper surface of the piezoelectric film 102, or on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103 and on the surface of the interdigital electrode 103; when the high thermal conductivity film 104 includes two layers of high thermal conductivity material, the two layers may be the same or different. However, in actual manufacturing, the high thermal conductivity film 104 usually only contains one layer of high thermal conductivity material due to the comprehensive consideration of device cost, volume, performance, and the like. Optionally, the high thermal conductivity film 104 is a material with a thermal conductivity greater than 100W/(m &), and based on this, the high thermal conductivity film 104 is preferably a material with high sound velocity and low electrical conductivity, such as aluminum nitride (AlN), silicon carbide (SiC), Diamond (Diamond), etc., to increase the operating frequency of the device and reduce the dielectric loss of the device; thickness of the high thermal conductivity film 104 and the piezoelectric film 102The thickness satisfies the following relationship: less than or equal to 200nm (h)1+h2) Less than or equal to 1200nm, and h1/h2<2.5; wherein h is1Is the thickness h of the high thermal conductivity film 1042Is the thickness of the piezoelectric film 102; alternatively, 0.15 when using the first order mode of the lamb wave resonator<h1/h2<0.4, 1.65 in the second order mode of the lamb wave resonator<h1/h2<2.05, to ensure the device has better electromechanical coupling coefficient under respective acoustic wave mode.
Specifically, the air cavity 105 may be a through groove penetrating through the upper and lower surfaces of the supporting substrate 101 (specifically, as shown in fig. 1), or may be a groove concavely formed on the upper surface of the supporting substrate 101 (specifically, as shown in fig. 7, 10, and 11) for constraining and exciting an elastic wave mode having a higher acoustic velocity than the supporting substrate 101, such as a first-order antisymmetric lamb wave. It should be noted that, in the actual device fabrication, the air cavity 105 penetrating through the supporting substrate 101 may be formed by performing local back etching on the supporting substrate 101, the air cavity 105 may be formed by performing front surface opening on the upper layer structure of the supporting substrate 101 and etching the supporting substrate 101, and the air cavity 105 may be formed by forming a sacrificial layer on the supporting substrate 101 in advance and etching, which is not limited in this example.
Specifically, the lamb wave resonator 100 further includes a dielectric layer 106; when the high-thermal-conductivity film 104 is formed between the supporting substrate 101 and the piezoelectric film 102, the dielectric layer 106 is formed on the upper surface of the piezoelectric film 102 uncovered by the interdigital electrode 103 and the surface of the interdigital electrode 103 (not shown in the figure); when the high thermal conductivity film 104 is formed on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103, or when the high thermal conductivity film 104 is formed on the entire upper surface of the piezoelectric film 102, the dielectric layer 106 is formed on the upper surface of the high thermal conductivity film 104 and the surface of the interdigital electrode 103 (not shown in the figure); the high thermal conductivity film 104 is formed on the upper surface of the piezoelectric film 102 not covered by the interdigital electrode 103 and the interdigital electrode 103At the surface, the dielectric layer 106 is formed on the upper surface of the high thermal conductivity film 104 (as shown in fig. 11). In practical applications, whether the dielectric layer 106 needs to be disposed or not may be determined according to specific requirements, and the material of the dielectric layer 106 needs to be selected according to the function of the dielectric layer in the device, for example, if the function of the dielectric layer in the device is temperature compensation, silicon oxide (SiO) is usually used2) To form the dielectric layer 106; most insulating materials may be used to form the dielectric layer 106 if their role in the device is to reduce the device operating frequency.
The following describes the performance of the lamb wave resonator of this embodiment, taking the structure of the lamb wave resonator shown in fig. 1 as example 1, and taking the structure in which the high thermal conductivity thin film is removed as comparative example 1; of these, example 1 and comparative example 1 differ only in the presence or absence of a high thermal conductivity thin film and the thickness of a piezoelectric thin film.
Example 1: taking Si as a supporting substrate; SiC is used as a high-thermal-conductivity film with the thickness h1Thermal conductivity 490W/(m &); LiNbO at Y128 °3As a piezoelectric film, having a thickness h2A thermal conductivity of 4.2W/(m. K); manufacturing an interdigital electrode by using 200nm metal Al, wherein the duty ratio of the interdigital electrode is 0.1, and the period lambda is 2p which is 10 mu m; wherein h is1+h2＝1μm。
Comparative example 1: taking Si as a supporting substrate; LiNbO at Y128 °3As a piezoelectric film, having a thickness h 21 μm, with a thermal conductivity of 4.2W/(m £ K); an interdigital electrode was made of 200nm metal Al, the duty ratio thereof was 0.1, and the period λ thereof was 2p 10 μm.
FIG. 4 is a graph of electromechanical coupling coefficients and acoustic velocity as a function of piezoelectric film thickness h for the lamb wave resonator structure of example 1 in the first-order and second-order antisymmetric lamb wave modes2When the thickness h of the piezoelectric film is21000nm, the electromechanical coupling coefficients and the acoustic velocity in different modes corresponding to the device structure described in comparative example 1 are obtained.
For the first order antisymmetric lamb wave mode: at h1/h2When about 1/4, it is shownElectromechanical coupling coefficient K of the device structure described in example 12Reaches a maximum value, and when h1/h2<0.54, coefficient of electromechanical coupling K for the device structure described in example 12Electromechanical coupling coefficient K of the device structure compared to that of comparative example 12All are improved; furthermore, with h1Increase h2The acoustic speed of the first order anti-symmetric lamb wave mode of the device structure of example 1 is reduced and improved. Note that the increase in sound velocity here is due to the fact that SiC, when used as a high thermal conductivity film, has a sound velocity higher than that of a piezoelectric film; if the sound velocity of the high thermal conductivity film is lower than that of the piezoelectric film, the sound velocity variation trends in the figure are completely opposite.
For the second order antisymmetric lamb wave mode: the device structure described in comparative example 1 does not have a second order antisymmetric lamb wave mode, while the device structure described in example 1, when h is1/h2About 1.86, the electromechanical coupling coefficient K2The acoustic velocity reaches 16.1 percent, the acoustic velocity is twice of a first-order antisymmetric lamb wave mode, and the application potential is great.
FIG. 5 shows the thermal simulation results of the device structures of example 1 and comparative example 1, and a control group made of SiO was added2Substitution of SiC, SiO2Has a thermal conductivity of 1.4W/(m. K); FIG. 5(a) shows a device structure (LiNbO) according to comparative example 13Thickness of 1 μm), and fig. 5(b) is a device structure (LiNbO) described in example 13800nm thick and 200nm thick SiC), and fig. 5(c) is a control group of the device structure (LiNbO)3Has a thickness of 800nm and SiO2200nm) is used.
The simulated initial temperature was set at 293K, suspended membrane (the membrane in comparative example 1 is LiNbO)3The film in example 1 is LiNbO3And SiC, the reference film is LiNbO3And SiO2Composite film composed) continuously generates heat due to high-frequency vibration, so that a heat source is applied to the suspended film area to simulate the heat; the maximum working temperature of a thin film in the structure of the device in the comparative example 1 is up to 537K, and the device in the example 1The maximum operating temperature of the films in the structure was 309K, which was only a slight 16K increase from the initial temperature, and the maximum operating temperature of the films in the device structure of the control group was 587K. It can be seen that the device structure described in example 1 has an excellent heat dissipation effect, and the high-thermal-conductivity thin film has an important significance in improving the power capacity of the suspended lamb wave resonator.
FIG. 6 shows the thickness of the piezoelectric thin film in the device structure of comparative example 1 and that in the device structure of example 1 are 800nm (h)1/h20.25) and 350nm (h)1/h21.86) in the case of a simulated admittance curve; wherein the effective electromechanical coupling coefficient K of the first-order antisymmetric lamb wave mode of the device structure described in comparative example 1t 234.7%, effective electromechanical coupling coefficient K of third-order antisymmetric lamb wave modet 27.1 percent; for the device structure of example 1 with a piezoelectric film thickness of 800nm, the effective electromechanical coupling coefficient K of the first-order anti-symmetric lamb wave modet 238.2%, the effective electromechanical coupling coefficient K of its three-order antisymmetric lamb wave modet 25.2%, and the working frequency of each mode is obviously improved compared with that of comparative example 1; for the device structure of example 1 with the thickness of 350nm, the effective electromechanical coupling coefficient K of the first-order anti-symmetric lamb wave modet 2Reduced to 21.8%, and the effective electromechanical coupling coefficient K of the second-order antisymmetric lamb wave modet 2A maximum of 16.5% is reached and the operating frequency is 6 GHz. It can be seen that the device structure described in example 1 has a better overall electrical performance compared to comparative example 1, which also better demonstrates the trend of the curve in fig. 4.
The following describes the performance of the lamb wave resonator of this embodiment, with the structure of the lamb wave resonator shown in fig. 7 as example 2, and the structure in which the high thermal conductivity thin film is removed as comparative example 2; of these, example 2 and comparative example 2 differ only in the presence or absence of a high thermal conductivity thin film and the thickness of a piezoelectric thin film.
Example 2: taking Si as a supporting substrate; AlN as a high thermal conductivity film with a thickness h1＝150nm，Its thermal conductivity was 320W/(m. K); LiNbO at Y128 °3As a piezoelectric film, having a thickness h2850nm, thermal conductivity 4.2W/(m £ K); an interdigital electrode was made of 100nm Al, and the duty ratio thereof was 0.1, and the period λ thereof was 2p 10 μm.
Comparative example 2: taking Si as a supporting substrate; LiNbO at Y128 °3As a piezoelectric film, having a thickness h 21 μm, with a thermal conductivity of 4.2W/(m £ K); an interdigital electrode was made of 100nm Al, and the duty ratio thereof was 0.1, and the period λ thereof was 2p 10 μm.
FIG. 8 is a thermal simulation result of the device structures described in example 2 and comparative example 2; FIG. 8(a) shows a device structure (LiNbO) according to comparative example 23Thickness of 1 μm), and fig. 8(b) is a device structure (LiNbO) described in example 23The thickness of (b) is 850nm, and the thickness of AlN is 150 nm).
The simulated initial temperature was set at 293K, suspended membrane (the membrane in comparative example 2 is LiNbO)3The thin film in example 2 is LiNbO3And AlN) to generate heat continuously due to high frequency vibration, so that a heat source is applied to the suspended film region to simulate the heat; the maximum working temperature of the film in the device structure of comparative example 2 is up to 537K, and the maximum working temperature of the film in the device structure of example 2 is 329K, which is only slightly higher than the initial temperature by 36K, so that excellent heat dissipation effect is achieved.
FIG. 9 is a simulated admittance curve of the device structure of comparative example 2 and the device structure of example 2, the device structure of example 2 having a slightly higher operating frequency of the first-order anti-symmetric lamb wave mode and an effective electromechanical coupling coefficient K, as compared to comparative example 2t 2Also from 34.7% to 44.2%.
In summary, the lamb wave resonator according to the embodiment can greatly improve the heat dissipation characteristic of the device on the premise of not sacrificing the electromechanical coupling coefficient, the working frequency, the mechanical strength and other properties of the device, so as to improve the power capacity of the device; that is to say, the lamb wave resonator of the composite film of the present embodiment has better comprehensive electrical properties and higher power capacity than the lamb wave resonator of a single piezoelectric film.
Example two
The present embodiment provides an elastic wave device including: at least one lamb wave resonator 100 according to the first embodiment.
Specifically, the elastic wave device is a filter; the filter includes N lamb wave resonators 100 connected in series and M lamb wave resonators 100 connected in parallel (specifically, as shown in fig. 12, in the figure, a series lamb wave resonator is shown by oblique lines, and a parallel lamb wave resonator is shown by grid lines); or, the filter includes N lamb wave resonators 100 connected in series and M inductor-capacitor integrated passive structures, where the inductor-capacitor integrated passive structure is connected between any two lamb wave resonators 100 (specifically, as shown in fig. 13, an inductor-capacitor integrated passive structure is shown in a dashed-line frame in the figure); wherein N is a positive integer greater than or equal to 2, and M is a positive integer greater than or equal to 1. Of course, other filter structures that may be constructed from lamb wave resonators are equally suitable for this example. In practical application, for a filter composed of N lamb wave resonators 100 connected in series and M lamb wave resonators 100 connected in parallel, it is necessary to ensure that the electromechanical coupling coefficients and operating frequencies of the N lamb wave resonators connected in series are substantially the same, the electromechanical coupling coefficients and operating frequencies of the M lamb wave resonators connected in parallel are substantially the same, and the resonance frequency of the lamb wave resonators connected in series is substantially the same as the anti-resonance frequency of the lamb wave resonators connected in parallel; when the specific device is manufactured, the working frequency of the series lamb wave resonator and the parallel lamb wave resonator can be adjusted by forming a dielectric layer above the lamb wave resonator and simultaneously adjusting the period of the interdigital electrodes of the series lamb wave resonator and the parallel lamb wave resonator together, so that the resonance frequency of the series lamb wave resonator is basically consistent with the anti-resonance frequency of the parallel lamb wave resonator.
Specifically, the elastic wave device is a multiplexer, and the multiplexer includes at least one filter. More specifically, the multiplexer is a duplexer, a triplexer, a quadplexer, or the like. It should be noted that the use of filters to construct multiplexers is well known to those skilled in the art and will not be described herein.
Taking the filter structure shown in fig. 12 as an example, the device structure shown in fig. 11 is taken as a parallel lamb wave resonator structure, and the structure in which the dielectric layer is removed in the device structure shown in fig. 11 is taken as a series lamb wave resonator structure.
Taking Si as a supporting substrate; AlN as a high thermal conductivity film with a thickness h1150nm, thermal conductivity 320W/(m K); LiNbO at Y128 °3As a piezoelectric film, having a thickness h2850nm, thermal conductivity 4.2W/(m £ K); an interdigital electrode is made of 100nm Al, the duty ratio is 0.1, and the period lambda of the interdigital electrode in a lamb wave resonator is connected in series1＝2p122 mu m, period lambda of interdigital electrodes in a parallel lamb wave resonator2＝2p216 μm; with SiO2The dielectric layer (formed only above the parallel lamb wave resonators) had a thickness of 320 nm.
Fig. 14 is a simulation result of an admittance curve and a filter insertion loss curve of a lamb wave resonator in the filter structure shown in fig. 12, and it can be seen from fig. 14 that both the series lamb wave resonator and the parallel lamb wave resonator exhibit a large effective electromechanical coupling coefficient and a small stray wave response, and the filter realizes an insertion loss of-3 dB at a center frequency of 2.03GHz, and a relative bandwidth is as high as 18%; that is, if the high thermal conductivity thin film and the piezoelectric thin film of the lamb wave resonator in the filter according to the present example are reduced by one half, a wide band (about 18%) filter having a center frequency of about 4GHz can be realized, and the advantage of high power capacity can be achieved.
In summary, according to the lamb wave resonator and the elastic wave device of the present invention, the single piezoelectric film is configured as the composite film formed by the piezoelectric film and the high thermal conductivity film, so that the device has a higher power capacity under the condition of maintaining the device to have a high operating frequency, a high electromechanical coupling coefficient and a high mechanical strength; meanwhile, a second-order antisymmetric lamb wave mode with high electromechanical coupling coefficient, which cannot be generated in a single piezoelectric film, can be realized. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (11)
1. A lamb wave resonator, comprising:
a support substrate;
a piezoelectric film formed on an upper surface of the support substrate;
the interdigital electrode is formed on the upper surface of the piezoelectric film;
a high thermal conductivity film formed at least on an upper surface of the piezoelectric film not covered by the interdigital electrode and/or formed between the support substrate and the piezoelectric film;
and the air cavity is formed in the supporting substrate, and the piezoelectric film and the high-heat-conductivity film in the area where the interdigital electrode is located are suspended above the supporting substrate.
2. The lamb wave resonator according to claim 1, wherein said high thermal conductivity thin film is formed between said support substrate and said piezoelectric thin film; or, the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode; or, the high-heat-conductivity film is formed on the upper surface of the whole piezoelectric film; or, the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode; or, the high-thermal-conductivity film is formed between the supporting substrate and the piezoelectric film, and is also formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode; or, the high-heat-conductivity film is formed between the support substrate and the piezoelectric film and is also formed on the upper surface of the whole piezoelectric film; or, the high-thermal-conductivity film is formed between the supporting substrate and the piezoelectric film, and is also formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode.
3. The lamb wave resonator according to claim 2, further comprising a dielectric layer; when the high-heat-conductivity film is formed between the supporting substrate and the piezoelectric film, the dielectric layer is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode; when the high-heat-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode, or when the high-heat-conductivity film is formed on the upper surface of the whole piezoelectric film, the dielectric layer is formed on the upper surface of the high-heat-conductivity film and the surface of the interdigital electrode; when the high-thermal-conductivity film is formed on the upper surface of the piezoelectric film uncovered by the interdigital electrode and the surface of the interdigital electrode, the dielectric layer is formed on the upper surface of the high-thermal-conductivity film.
4. The lamb wave resonator of claim 1, wherein the high thermal conductivity thin film has a thermal conductivity greater than 100W/(m £ K).
5. The lamb wave resonator according to claim 1, wherein the thickness of the high thermal conductivity thin film and the thickness of the piezoelectric thin film satisfy the following relationship: less than or equal to 200nm (h)1+h2) Less than or equal to 1200nm, and h1/h2<2.5; wherein h is1Is the thickness of the high thermal conductivity film, h2Is the thickness of the piezoelectric film.
6. The lamb wave resonator according to claim 1, wherein the center-to-center spacing between two adjacent ones of said interdigital electrodes satisfies the following relationship: 2 (h)1+h2)<p<20(h1+h2) (ii) a Wherein p is the center-to-center distance between adjacent interdigital electrodes, h1Is the thickness of the high thermal conductivity film, h2Is the thickness of the piezoelectric film.
7. The lamb wave resonator according to claim 1, wherein the inter-digital electrodes have a metallization ratio greater than 5% and less than 40%.
8. The lamb wave resonator according to claim 1, wherein the piezoelectric film is a single crystal lithium niobate or lithium tantalate.
9. An elastic wave device, characterized by comprising: at least one lamb wave resonator according to any one of claims 1-8.
10. The elastic wave device according to claim 9, wherein the elastic wave device is a filter; the filter comprises N lamb wave resonators connected in series and M lamb wave resonators connected in parallel; or the filter comprises N lamb wave resonators connected in series and M inductance-capacitance integrated passive structures, and the inductance-capacitance integrated passive structures are connected between any two lamb wave resonators; wherein N is a positive integer greater than or equal to 2, and M is a positive integer greater than or equal to 1.
11. The elastic wave device according to claim 10, wherein said elastic wave device is a multiplexer, said multiplexer including at least one filter.
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| CN113676152A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微***与信息技术研究所 | Elastic wave resonator and preparation method thereof |
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| CN116248072B (en) * | 2022-12-29 | 2024-04-02 | 上海馨欧集成微电有限公司 | Acoustic wave filter and signal processing circuit |
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