CN111446384A - Photomask and preparation method thereof - Google Patents
Photomask and preparation method thereof Download PDFInfo
- Publication number
- CN111446384A CN111446384A CN202010291264.2A CN202010291264A CN111446384A CN 111446384 A CN111446384 A CN 111446384A CN 202010291264 A CN202010291264 A CN 202010291264A CN 111446384 A CN111446384 A CN 111446384A
- Authority
- CN
- China
- Prior art keywords
- layer
- heat dissipation
- photomask
- dissipation layer
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000007641 inkjet printing Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052753 mercury Inorganic materials 0.000 abstract description 13
- 230000006378 damage Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 66
- 238000012858 packaging process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 231100000040 eye damage Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The application discloses a photomask and a preparation method thereof, comprising a photomask body; the heat dissipation layer is arranged on the surface of the photomask body; and the reflecting layer is arranged on the heat dissipation layer. The invention provides a light shield and a preparation method thereof.A heat dissipation layer is arranged on a light shield body, so that the temperature rise of the light shield caused by long-time irradiation of a mercury lamp can be reduced, and the yield of products is improved; on the other hand, the heat dissipation layer is provided with a reflection layer, and the reflection layer can be arranged according to requirements to reflect ultraviolet light which is emitted by a mercury lamp and has no curing action wave band and visible light which has damage to eyes of an operator through light with specific wavelength.
Description
Technical Field
The present disclosure relates to display panels, and particularly to a mask and a method for fabricating the same.
Background
The ultraviolet light curing in the existing O L ED packaging process uses a high-pressure mercury lamp, the ultraviolet light generated by a high-pressure pump lamp looks bright in brightness and high in heat, the spectrum of the ultraviolet light is very wide, the ultraviolet spectrum section really with effective curing action only accounts for part of energy, a large part of the energy is in a visible light section and generates heat, the eye damage to an operator is serious, the organic functional layer is easy to degrade, and the heat generated by long-time irradiation of the mercury lamp causes the ambient temperature and the photomask temperature to rise, so that the product is adversely affected.
Therefore, there is a need to develop a new mask to overcome the defects of the prior art.
Disclosure of Invention
An object of the present invention is to provide a photomask capable of solving the problems of severe damage to the eyes of an operator and easy deterioration of an organic functional layer, which are generated when a high-pressure mercury lamp is used for ultraviolet curing in a packaging process in the prior art.
To achieve the above object, the present invention provides a photomask, which includes a photomask body; the heat dissipation layer is arranged on the surface of the photomask body; and the reflecting layer is arranged on the heat dissipation layer.
The heat dissipation layer is arranged on the photomask body, so that the temperature rise of the photomask caused by long-time irradiation of a mercury lamp can be reduced, and the yield of products is improved; on the other hand, the heat dissipation layer is provided with a reflection layer, and the reflection layer can be arranged according to requirements to reflect ultraviolet light which is emitted by a mercury lamp and has no curing action wave band and visible light which has damage to eyes of an operator through light with specific wavelength.
Further, in other embodiments, the material of the reticle body is quartz.
Further, in other embodiments, the material of the heat dissipation layer adopts transparent graphene.
Further, in other embodiments, the light transmittance of the heat dissipation layer is greater than 90%.
Further, in other embodiments, wherein the reflective layer employs a distributed bragg mirror, the reflective layer reflects light having wavelengths in the range of 0-350nm and 370-400 nm. In other embodiments, the reflective layer may be provided with a film thickness to reflect light in other wavelength ranges, and may be provided as needed, and is not limited herein.
Further, in other embodiments, a pattern layer is disposed on the reflective layer according to requirements.
In order to achieve the above object, the present invention further provides a preparation method for preparing the photomask, the preparation method comprising the following steps: providing a photomask body, and preparing a heat dissipation layer on the surface of the photomask body; and preparing a reflecting layer on the heat dissipation layer.
Further, in other embodiments, the step of preparing the reflective layer further comprises preparing a pattern layer on the reflective layer.
Further, in other embodiments, the heat dissipation layer is prepared on the mask body by an inkjet printing method or a chemical vapor deposition method.
Further, in other embodiments, the inkjet printing method for preparing the heat dissipation layer includes forming a solution of a transparent graphene material and a solvent, and inkjet printing the solution on the surface of the mask body.
Further, in other embodiments, the chemical vapor deposition method for preparing the heat dissipation layer includes adsorbing a hydrocarbon gas on a metal surface with catalytic activity, and dehydrogenating the hydrocarbon gas by high-temperature heating to obtain the graphene heat dissipation layer.
Further, in other embodiments, wherein the hydrocarbon gas is acetylene or ethylene, the catalytically active metal is copper metal or nickel metal.
Further, in other embodiments, the reflective layer is prepared on the scattering layer by a plating deposition method.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a light shield and a preparation method thereof.A heat dissipation layer is arranged on a light shield body, so that the temperature rise of the light shield caused by long-time irradiation of a mercury lamp can be reduced, and the yield of products is improved; on the other hand, the heat dissipation layer is provided with a reflection layer, and the reflection layer can be arranged according to requirements to reflect ultraviolet light which is emitted by a mercury lamp and has no curing action wave band and visible light which has damage to eyes of an operator through light with specific wavelength.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of a mask according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating a method for fabricating a mask according to an embodiment of the present invention.
Description of the drawings:
mask-100;
a mask body-110;
heat dissipation layer-120; a reflective layer-130;
pattern layer-140.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a mask 100 according to an embodiment of the present invention, which includes a mask body 110, a heat dissipation layer 120, a reflective layer 130, and a pattern layer 140.
The heat dissipation layer 120 is disposed on the surface of the mask body 110, and the heat dissipation layer is disposed on the mask body, so that the temperature rise of the mask caused by long-time irradiation of mercury lamp during the packaging process can be reduced, and the yield of the product can be improved.
The reflective layer 120 is disposed on the heat dissipation layer 110, and can reflect ultraviolet light emitted from a mercury lamp and having no curing wavelength band and visible light which is harmful to eyes of an operator by passing light with a specific wavelength.
The pattern layer 140 is disposed on the reflective layer 130, and the pattern of the pattern layer 140 is disposed according to specific requirements, and different requirements correspond to different patterns, which is determined by the requirements and is not limited herein.
The material of the photomask body 110 is quartz, the material of the heat dissipation layer 110 is transparent graphene, and the light transmittance of the heat dissipation layer 110 is greater than 90%.
Wherein the reflective layer 120 employs a distributed bragg reflector, and in this embodiment, the reflective layer 120 reflects light having wavelengths in the ranges of 0-350nm and 370-400 nm. In other embodiments, the reflective layer 120 may be configured to reflect light in other wavelength ranges by setting the film thickness, and the reflective layer is not limited herein as needed.
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a mask 100 according to an embodiment of the present invention, where the method includes steps 1-4.
Step 1: a mask body is provided.
Step 2: and preparing a heat dissipation layer on the surface of the photomask body.
The photomask body is made of quartz.
Specifically, the heat dissipation layer is prepared on the photomask body by an ink-jet printing method or a chemical vapor deposition method.
The preparation method of the heat dissipation layer by the ink-jet printing method comprises the steps of forming a solution by a transparent graphene material and a solvent, and printing the solution on the surface of the photomask body in an ink-jet mode; the preparation method of the heat dissipation layer by the chemical vapor deposition method comprises the steps of adsorbing hydrocarbon gas on the surface of metal with catalytic activity, and dehydrogenating the hydrocarbon gas by high-temperature heating to prepare the graphene heat dissipation layer.
The hydrocarbon gas adopts acetylene or ethylene, and the metal with catalytic activity adopts copper metal or nickel metal.
The light transmittance of the heat dissipation layer is larger than 90%.
And step 3: and preparing a reflecting layer on the heat dissipation layer.
Wherein the reflecting layer is prepared on the scattering layer by a coating deposition mode. The reflective layer employs a distributed bragg reflector, and in this embodiment, the reflective layer reflects light having wavelengths in the range of 0-350nm and 370-400 nm. In other embodiments, the reflective layer 120 may be configured to reflect light in other wavelength ranges by setting the film thickness, and the reflective layer is not limited herein as needed.
And 4, step 4: preparing a pattern layer on the reflecting layer.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a photomask, wherein a heat dissipation layer is arranged on a photomask body, so that the temperature rise of the photomask caused by long-time irradiation of a mercury lamp can be reduced, and the yield of products is improved; on the other hand, the heat dissipation layer is provided with a reflection layer, and the reflection layer can be arranged according to requirements to reflect ultraviolet light which is emitted by a mercury lamp and has no curing action wave band and visible light which has damage to eyes of an operator through light with specific wavelength.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The photomask and the preparation thereof provided by the embodiments of the present application are described in detail above, and the principle and the implementation of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A photomask, comprising
A mask body;
the heat dissipation layer is arranged on the surface of the photomask body;
and the reflecting layer is arranged on the heat dissipation layer.
2. The optical cover according to claim 1, wherein the material of the heat dissipation layer is transparent graphene.
3. The mask of claim 1, wherein the heat spreading layer has a light transmittance of greater than 90%.
4. The modified reticle of claim 1, wherein the reflective layer employs distributed bragg reflectors, the reflective layer reflecting light in the wavelength ranges of 0-350nm and 370-400 nm.
5. A method for preparing the mask of claim 1, comprising the steps of:
providing a mask body;
preparing a heat dissipation layer on the surface of the photomask body;
and preparing a reflecting layer on the heat dissipation layer.
6. The method of claim 5, wherein the heat spreader layer is formed on the mask body by an inkjet printing method or a chemical vapor deposition method.
7. The method of claim 6, wherein the ink jet printing process preparing the heat spreading layer comprises
And forming a solution by using a transparent graphene material and a solvent, and printing the solution on the surface of the photomask body in an ink-jet mode.
8. The method of claim 6, wherein the chemical vapor deposition process comprises forming the heat spreading layer by a chemical vapor deposition process
Adsorbing hydrocarbon gas on the surface of metal with catalytic activity, and heating at high temperature to dehydrogenate the hydrocarbon gas to obtain the graphene heat dissipation layer.
9. The method according to claim 8, wherein the hydrocarbon gas is acetylene or ethylene, and the metal having catalytic activity is copper metal or nickel metal.
10. The method of claim 5, wherein the reflective layer is prepared by a plating deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010291264.2A CN111446384A (en) | 2020-04-14 | 2020-04-14 | Photomask and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010291264.2A CN111446384A (en) | 2020-04-14 | 2020-04-14 | Photomask and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111446384A true CN111446384A (en) | 2020-07-24 |
Family
ID=71654112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010291264.2A Pending CN111446384A (en) | 2020-04-14 | 2020-04-14 | Photomask and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111446384A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW475094B (en) * | 2001-05-29 | 2002-02-01 | Shr Min | Anti-reflection layer structure of mask |
| CN2594823Y (en) * | 2002-12-10 | 2003-12-24 | 廖骏吉 | Light shade with heat radiating structure |
| US6806007B1 (en) * | 2003-05-02 | 2004-10-19 | Advanced Micro Devices, Inc. | EUV mask which facilitates electro-static chucking |
| TW200622508A (en) * | 2004-09-17 | 2006-07-01 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography and method for producing same |
| US20090015902A1 (en) * | 2007-07-11 | 2009-01-15 | Powers Richard M | Thermally Switched Reflective Optical Shutter |
| CN101359172A (en) * | 2007-07-31 | 2009-02-04 | Icf科技有限公司 | Method of making thin film pattern layer |
| CN102736323A (en) * | 2012-06-25 | 2012-10-17 | 深圳市华星光电技术有限公司 | Photomask capable of curing frame glue and method for manufacturing liquid crystal display panel |
| CN106773352A (en) * | 2016-12-30 | 2017-05-31 | 武汉华星光电技术有限公司 | A kind of method for solidifying light shield and making display panel |
| CN108604057A (en) * | 2016-01-26 | 2018-09-28 | 汉阳大学校产学协力团 | Extreme ultraviolet light shield protection film structure body and its manufacturing method |
| TW201837596A (en) * | 2017-03-28 | 2018-10-16 | 聯華電子股份有限公司 | Extreme ultraviolet photomask and method for fabricating the same |
-
2020
- 2020-04-14 CN CN202010291264.2A patent/CN111446384A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW475094B (en) * | 2001-05-29 | 2002-02-01 | Shr Min | Anti-reflection layer structure of mask |
| CN2594823Y (en) * | 2002-12-10 | 2003-12-24 | 廖骏吉 | Light shade with heat radiating structure |
| US6806007B1 (en) * | 2003-05-02 | 2004-10-19 | Advanced Micro Devices, Inc. | EUV mask which facilitates electro-static chucking |
| TW200622508A (en) * | 2004-09-17 | 2006-07-01 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography and method for producing same |
| US20090015902A1 (en) * | 2007-07-11 | 2009-01-15 | Powers Richard M | Thermally Switched Reflective Optical Shutter |
| CN101359172A (en) * | 2007-07-31 | 2009-02-04 | Icf科技有限公司 | Method of making thin film pattern layer |
| CN102736323A (en) * | 2012-06-25 | 2012-10-17 | 深圳市华星光电技术有限公司 | Photomask capable of curing frame glue and method for manufacturing liquid crystal display panel |
| CN108604057A (en) * | 2016-01-26 | 2018-09-28 | 汉阳大学校产学协力团 | Extreme ultraviolet light shield protection film structure body and its manufacturing method |
| CN106773352A (en) * | 2016-12-30 | 2017-05-31 | 武汉华星光电技术有限公司 | A kind of method for solidifying light shield and making display panel |
| TW201837596A (en) * | 2017-03-28 | 2018-10-16 | 聯華電子股份有限公司 | Extreme ultraviolet photomask and method for fabricating the same |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200724 |
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| RJ01 | Rejection of invention patent application after publication |