CN111416605B - Semi-controlled device driving device - Google Patents
Semi-controlled device driving device Download PDFInfo
- Publication number
- CN111416605B CN111416605B CN201911419586.4A CN201911419586A CN111416605B CN 111416605 B CN111416605 B CN 111416605B CN 201911419586 A CN201911419586 A CN 201911419586A CN 111416605 B CN111416605 B CN 111416605B
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- pulse signal
- semi
- controlled device
- voltage detection
- detection switch
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- 238000001514 detection method Methods 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims description 4
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 24
- 101150105073 SCR1 gene Proteins 0.000 description 24
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 24
- 101000668165 Homo sapiens RNA-binding motif, single-stranded-interacting protein 1 Proteins 0.000 description 6
- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 6
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/305—Modifications for providing a predetermined threshold before switching in thyristor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
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- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
The invention relates to a semi-controlled device driving device capable of performing throttling driving on a semi-controlled device, which comprises a voltage detection switch, wherein the voltage detection switch is connected in series with a trigger electrode of the semi-controlled device to be driven, and is used for detecting the potential difference between the trigger electrode of the semi-controlled device and a cathode of the semi-controlled device.
Description
Technical Field
The invention relates to a semi-controlled device driving device, in particular to a semi-controlled device driving device capable of performing throttling driving on a semi-controlled device.
Background
Because the thyristor (semi-controlled device) is generally driven to be conducted by adopting a pulse signal at present, the drive current of the thyristor is still continuously improved after the thyristor is conducted, and the defect of high drive energy consumption exists.
Disclosure of Invention
The invention aims to solve the defect of pulse driving of the traditional half-control device and provides a half-control device driving device capable of closing half-control device driving current after the half-control device is conducted.
The aim of the invention is achieved by the following technical scheme:
the device comprises a voltage detection switch, wherein the voltage detection switch is connected in series with a trigger electrode of a half-controlled device to be driven, and the voltage detection switch is used for detecting potential difference between the trigger electrode of the half-controlled device and a cathode of the half-controlled device.
Semi-controlled device driving device, voltage detection switch connected with pulse signal
A semi-controlled device driving apparatus, a voltage detection switch is used for detecting the voltage of a pulse signal.
When the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at low level, a high-level pulse signal is input, and a voltage detection switch is turned on; when the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at high level, a high-level pulse signal is input, and the voltage detection switch is in a cut-off state.
A semi-controlled device driving apparatus, the operating energy of the voltage detection switch is provided by the pulse signal.
A semi-controlled device driver is composed of voltage detecting switch consisting of transistor and resistor or transistor, resistor and capacitor.
A driving device of a semi-controlled device is provided, wherein the semi-controlled device is a thyristor.
The voltage detection switch comprises a first voltage detection switch and a second voltage detection switch, the half-control device comprises a first half-control device and a second half-control device, the first half-control device and the second half-control device are reversely connected in parallel, the half-control device further comprises a control unit, a first photoelectric coupler and a second photoelectric coupler, the pulse signal comprises a first pulse signal and a second pulse signal, the first voltage detection switch is connected with the first half-control device, the second voltage detection switch is connected with the second half-control device, the first photoelectric coupler is connected with the first voltage detection switch, the second photoelectric coupler is connected with the second voltage detection switch, an output signal of the first photoelectric coupler and an output signal of the second photoelectric coupler are transmitted to the control unit, the control unit provides the first pulse signal to the first voltage detection switch, and the control unit provides the second pulse signal to the second voltage detection switch.
In the semi-controlled device driving device, a control unit provides a first pulse signal and stops providing a second pulse signal when a first semi-controlled device is in a conducting state; the control unit provides a second pulse signal in the on state of the second semi-controlled device, and stops providing the first pulse signal.
In the semi-controlled device driving device, a control unit provides a first pulse signal and stops providing a second pulse signal when a first semi-controlled device is in a conducting state; the control unit provides a second pulse signal when the first half-control device is turned on and turned off, and stops providing the first pulse signal; the control unit provides a second pulse signal under the conduction state of the second semi-controlled device, and stops providing the first pulse signal; and the control unit provides the first pulse signal when the second semi-controlled device is turned on or off, and stops providing the second pulse signal.
A semi-controlled device driving device, the working energy of the first photoelectric coupler is provided by the first pulse signal; the working energy of the second photoelectric coupler is provided by a second pulse signal.
The invention has reasonable design and has the advantages of triggering current and good energy-saving effect of the semi-controlled device which is turned off after being turned on.
Drawings
Fig. 1 is a schematic circuit diagram of a driving apparatus for a half-controlled device according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a second circuit of an embodiment of a semi-controlled device driving apparatus according to the present invention.
Detailed Description
In a first embodiment of the semi-controlled device driving apparatus of the present invention, as shown in fig. 1:
the device driving device comprises a voltage detection switch A, wherein the voltage detection switch A is connected in series with a trigger electrode of a half-controlled device SCR1 (which is a thyristor and is a unidirectional thyristor) to be driven, the voltage detection switch A is used for detecting a potential difference between the trigger electrode of the half-controlled device SCR1 and a cathode of the half-controlled device SCR1, and the voltage detection switch A is connected with a pulse signal (not limited).
Voltage detection switch a: the working energy is provided by a pulse signal; the voltage detection switch A is also used for detecting the voltage of the pulse signal (the pulse signal is selected according to the requirement); consists of triode, resistor and capacitor (omitted).
Working principle: in the cut-off state of the semi-controlled device SCR1, the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1 are in low level (zero voltage), and when the voltage detection switch A inputs a high level pulse signal, the voltage detection switch A is conducted; when the voltage between the anode and the cathode of the semi-controlled device SCR1 meets the conduction condition of the semi-controlled device SCR1, the semi-controlled device SCR1 is conducted, when the pulse signal is at a low level, the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1 are at a high level (about 1 volt), and when the pulse signal at the high level is input, the voltage detection switch A is in a cut-off state, so that the purpose of closing the trigger electrode current of the semi-controlled device SCR1 is achieved.
In a second embodiment of the semi-controlled device driving apparatus of the present invention, as shown in fig. 2:
the utility model provides a half accuse type device drive arrangement, including voltage detection switch (first voltage detection switch A1, second voltage detection switch A2), voltage detection switch and the half accuse type device that needs drive (first half accuse type device SCR1, second half accuse type device SCR2, first half accuse type device SCR1, second half accuse type device SCR2 anti-parallel) (be the trigger pole of thyristor) establish ties, voltage detection switch (A1, A2) are used for detecting the trigger pole of half accuse type device (SCR 1, SCR 2), the potential difference between the negative pole of half accuse type device (SCR 1, SCR 2), voltage detection switch (A1, A2) connect pulse signal.
Voltage detection switches (A1, A2): the working energy is provided by a pulse signal; the voltage detection switches (A1, A2) are also used for detecting the voltage of the pulse signals (selected according to the requirement); consists of triode, resistor and capacitor (omitted).
The photoelectric detection device further comprises a control unit B, a first photoelectric coupler OPT1 and a second photoelectric coupler OPT2, wherein the pulse signals comprise a first pulse signal (driving SCR 1) and a second pulse signal (driving SCR 2), the first voltage detection switch A1 is connected with the first half-control device SCR1, the second voltage detection switch A2 is connected with the second half-control device SCR2, the first photoelectric coupler OPT1 is connected with the first voltage detection switch A1, the second photoelectric coupler OPT2 is connected with the second voltage detection switch A2, an output signal of the first photoelectric coupler OPT1 and an output signal of the second photoelectric coupler OPT2 are transmitted to the control unit B, the control unit B provides the first pulse signal to the first voltage detection switch A1, and the control unit B provides the second pulse signal to the second voltage detection switch A1.
Working principle: in the cut-off state of the semi-controlled device, the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are in low level (zero voltage), and when the voltage detection switch A inputs a high-level pulse signal, the voltage detection switch A is conducted; when the voltage between the anode and the cathode of the semi-controlled device SCR1 meets the conduction condition of the semi-controlled device SCR1, the semi-controlled device SCR1 is conducted, when the pulse signal is at a low level, the trigger electrode of the semi-controlled device SCR1 and the cathode of the semi-controlled device SCR1 are at a high level (about 1 volt), and when the pulse signal at the high level is input, the voltage detection switch A is in a cut-off state, so that the purpose of closing the trigger electrode current of the semi-controlled device SCR1 is achieved.
The control unit B provides a first pulse signal and stops providing a second pulse signal when the first half-control device SCR1 is in a conducting state; the control unit B provides a second pulse signal in the on state of the second semi-controlled device SCR2, and stops providing the first pulse signal.
The control unit B provides a first pulse signal and stops providing a second pulse signal when the first half-control device SCR1 is in a conducting state; the control unit B provides a second pulse signal when the first half-control device SCR1 is turned on and turned off, and stops providing the first pulse signal; the control unit B provides a second pulse signal under the conduction state of the second semi-control device SCR2 and stops providing the first pulse signal; the control unit B supplies the first pulse signal when the second semi-controlled device SCR2 is turned on or off, and stops supplying the second pulse signal. The working energy of the first photoelectric coupler OPT1 is provided by a first pulse signal; the operating energy of the second optocoupler OPT2 is provided by a second pulse signal.
In this embodiment, when one half-controlled device is turned on, the other half-controlled device is turned on in reverse parallel, and no pulse signal is provided, so that driving energy consumption is reduced.
In conclusion, the invention has the advantages of good energy-saving effect and no need of adopting a high-voltage current-limiting element.
Claims (8)
1. The utility model provides a half accuse type device drive arrangement, includes voltage detection switch, voltage detection switch and the trigger pole series connection of the half accuse type device that needs to drive, characterized by: one end of the voltage detection switch is connected with the cathode of the semi-controlled device, the other end of the voltage detection switch is connected with a pulse signal, the voltage detection switch is used for detecting the potential difference between the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device, the voltage detection switch is used for detecting the voltage of the pulse signal, when the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at a low level, a high level pulse signal is input, and the voltage detection switch is turned on; when the trigger electrode of the semi-controlled device and the cathode of the semi-controlled device are at high level, the pulse signal at high level is input, and the voltage detection switch is in a cut-off state.
2. The semi-controlled device driving apparatus according to claim 1, wherein: the operating energy of the voltage detection switch is provided by the pulse signal.
3. The semi-controlled device driving apparatus according to claim 1, wherein: the voltage detection switch consists of a triode and a resistor, or consists of a triode, a resistor and a capacitor.
4. The semi-controlled device driving apparatus according to claim 1, wherein: the semi-controlled device is a thyristor.
5. The half-controlled device driving apparatus according to any one of claims 1 to 4, characterized in that: the voltage detection switch comprises a first voltage detection switch and a second voltage detection switch, the half-control type device comprises a first half-control type device and a second half-control type device, the first half-control type device and the second half-control type device are connected in reverse parallel, the voltage detection switch further comprises a control unit, a first photoelectric coupler and a second photoelectric coupler, the pulse signal comprises a first pulse signal and a second pulse signal, the first voltage detection switch is connected with the first half-control type device, the second voltage detection switch is connected with the second half-control type device, the first photoelectric coupler is connected with the first voltage detection switch, the second photoelectric coupler is connected with the second voltage detection switch, the output signal of the first photoelectric coupler and the output signal of the second photoelectric coupler are transmitted to the control unit, the control unit provides the first pulse signal to the first voltage detection switch, and the control unit provides the second pulse signal to the second voltage detection switch.
6. The semi-controlled device driving apparatus according to claim 5, wherein: the control unit provides the first pulse signal and stops providing the second pulse signal in the on state of the first semi-controlled device; and the control unit provides the second pulse signal under the conduction state of the second semi-controlled device and stops providing the first pulse signal.
7. The semi-controlled device driving apparatus according to claim 5, wherein:
the control unit provides the first pulse signal and stops providing the second pulse signal in the on state of the first semi-controlled device;
the control unit provides the second pulse signal when the first half-control device is turned on or off, and stops providing the first pulse signal;
the control unit provides the second pulse signal in the on state of the second semi-controlled device and stops providing the first pulse signal;
and the control unit provides the first pulse signal when the second semi-controlled device is turned on or off, and stops providing the second pulse signal.
8. The semi-controlled device driving apparatus according to claim 5, wherein: the working energy of the first photoelectric coupler is provided by the first pulse signal; the working energy of the second photoelectric coupler is provided by the second pulse signal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910009988 | 2019-01-06 | ||
| CN2019100099880 | 2019-01-06 |
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| Publication Number | Publication Date |
|---|---|
| CN111416605A CN111416605A (en) | 2020-07-14 |
| CN111416605B true CN111416605B (en) | 2024-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911419586.4A Active CN111416605B (en) | 2019-01-06 | 2019-12-31 | Semi-controlled device driving device |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05184134A (en) * | 1991-12-26 | 1993-07-23 | Toyo Electric Mfg Co Ltd | Gate circuit for gto |
| CN102244510A (en) * | 2011-05-18 | 2011-11-16 | 广州市金矢电子有限公司 | Trigger energy saving apparatus and thyristor switch |
| CN202435365U (en) * | 2011-05-18 | 2012-09-12 | 广州市金矢电子有限公司 | Energy saving triggering device and thyristor switch |
| WO2014034063A1 (en) * | 2012-08-30 | 2014-03-06 | 株式会社デンソー | Semiconductor apparatus |
| CN204242871U (en) * | 2014-03-07 | 2015-04-01 | 广州市金矢电子有限公司 | Capacitance coupling type arc-suppression circuit and device |
| CN105449632A (en) * | 2014-08-15 | 2016-03-30 | 施耐德电器工业公司 | Equipment and method used for protecting low-voltage circuit |
| CN106712756A (en) * | 2016-01-24 | 2017-05-24 | 广州市金矢电子有限公司 | Hybrid switch |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN107733411A (en) * | 2016-08-10 | 2018-02-23 | 广州市金矢电子有限公司 | Half control type device drive throttling arrangement |
| CN108667442A (en) * | 2017-06-05 | 2018-10-16 | 广州市金矢电子有限公司 | Operating passing zero switching protective device |
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
-
2019
- 2019-12-31 CN CN201911419586.4A patent/CN111416605B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05184134A (en) * | 1991-12-26 | 1993-07-23 | Toyo Electric Mfg Co Ltd | Gate circuit for gto |
| CN102244510A (en) * | 2011-05-18 | 2011-11-16 | 广州市金矢电子有限公司 | Trigger energy saving apparatus and thyristor switch |
| CN202435365U (en) * | 2011-05-18 | 2012-09-12 | 广州市金矢电子有限公司 | Energy saving triggering device and thyristor switch |
| WO2014034063A1 (en) * | 2012-08-30 | 2014-03-06 | 株式会社デンソー | Semiconductor apparatus |
| CN204242871U (en) * | 2014-03-07 | 2015-04-01 | 广州市金矢电子有限公司 | Capacitance coupling type arc-suppression circuit and device |
| CN105449632A (en) * | 2014-08-15 | 2016-03-30 | 施耐德电器工业公司 | Equipment and method used for protecting low-voltage circuit |
| CN106712756A (en) * | 2016-01-24 | 2017-05-24 | 广州市金矢电子有限公司 | Hybrid switch |
| CN106788365A (en) * | 2016-01-24 | 2017-05-31 | 广州市金矢电子有限公司 | Half control type device driving method and device, hybrid devices |
| CN107733411A (en) * | 2016-08-10 | 2018-02-23 | 广州市金矢电子有限公司 | Half control type device drive throttling arrangement |
| CN108667442A (en) * | 2017-06-05 | 2018-10-16 | 广州市金矢电子有限公司 | Operating passing zero switching protective device |
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
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| CN111416605A (en) | 2020-07-14 |
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