CN111416038B - GeSbTe phase-change material thin film device with strong binding capacity and low resistance - Google Patents
GeSbTe phase-change material thin film device with strong binding capacity and low resistance Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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Abstract
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Mn, ta, taN, ti, W, ni, al, co or Cu. The improved thin film device based on the GeSbTe phase-change material has the characteristics of strong heat bonding capability, good consistency, small internal resistance and long service life.
Description
Technical Field
The invention relates to the field of phase change storage, in particular to a laminated phase change thin film device with complementary multi-layer material properties.
Background
The phase change memory (PRAM) is used as a nonvolatile memory technology, has the characteristics of strong vibration resistance and radiation resistance, and has wide application prospect. GeSbTe memory materials are currently a focus of research in this phase change memory material.
Aiming at the uncontrollability of the traditional GeSbTe storage material in the preparation process by adopting a mode of forming alloy by TiN or adopting Zn doping, the Chinese patent CN106374045A discloses a thin film device based on the GeSbTe phase change material, which comprises a substrate layer, a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material, and the thin film device has the characteristics of high thermal stability, good consistency, high phase change speed and long service life.
However, the thin film device has the following defects in practical application: if the substrate layer is a glass sheet, a silicon wafer or a carbonic ester sheet, the substrate layer is basically made of insulating materials; the lower electrode layer is Mn, ta, taN, ti, W, ni, al, co and/or Cu metal material, and has the defect of chemical activity deviation, so that the chemical bonding between the lower electrode layer and the substrate layer is difficult, and the bonding strength of the lower electrode layer and the substrate layer is restricted; the surface of the lower electrode layer is provided with a first GeSbTe material layer, the lower electrode layer made of metal has the problems of oxidization and vulcanization, the resistivity is increased, and the conduction effect of the lower electrode layer and the first GeSbTe material layer is affected; if the graphene layer is covered on the surface of the second GeSbTe material layer in a magnetron sputtering mode, the graphene is of a hexagonal two-dimensional structure with honeycomb lattice, the van der Waals force is strong, and aggregation in the second GeSbTe material matrix is easy, so that the conduction effect between the graphene layer and the second GeSbTe material layer is achieved. The above all affect the reduction of the resistance of the memory device, and uncertainty in the process causes the effect of product consistency.
Disclosure of Invention
The invention aims to provide a GeSbTe phase-change material thin film device with strong bonding capability and low resistance, and has the characteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.
The invention can be realized by the following technical scheme:
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Mn, ta, taN, ti, W, ni, al, co or Cu.
Further, the graphene layer is a graphene-Al-Al 2O3 powder composite powder material layer, and the graphene-Al-Al 2O3 composite powder material layer is formed by taking alloy powder of graphene, al alloy and Al 2O3 powder as a target material and performing magnetron sputtering deposition on the surface of the second GeSbTe material layer. The introduction of the Al 2O3 powder is to bring the point contact of the nano particles into play, enhance the interface compatibility of the graphene and the Al alloy, enhance the thermal conductivity of the Al alloy through the graphene, bring the characteristic of excellent comprehensive performance into play, improve the structural stability of the device, slow down the influence of deformation after multiple phase change cycles and prolong the service life.
Further, cr and Ag are densely deposited on the substrate layer by the double-cation composite electroplating mode at the same time by the Cr-Ag alloy coating. Meanwhile, the deposition is strong in compactness, good in combination and high in deposition speed, and is convenient for large-scale production.
Further, the mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 1-5:90-95: 10 to 15. Through reasonable regulation and control, the interfacial compatibility advantage of the alumina is fully exerted, the performance of the graphene layer is improved, and the manufacturing cost is reduced.
Further, the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of graphene dissolution, ultrasonic mixing and high-temperature sintering molding, the existing alloy powder metallurgy process is effectively utilized, and the realizability is high.
Further, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have overlapping time difference and are staggered with each other, so that the combination property and the stability are ensured.
Further, the protective layer is of a composite double-layer structure, the protective layer comprises a first protective film and a second protective film which are sequentially arranged on the surface of the graphene layer, the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, the compactness of the ZnS-SiO 2 film is smaller than that of a SiO 2 film, hydrophobic self-cleaning is achieved, and the influence of dust on the use of a device is avoided.
Further, the first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material.
Further, the first GeSbTe material layer comprises Ti 3+、Ni2+ and/or Al 3+ doped GeSbTe phase change material.
The improved thin film device based on the GeSbTe phase-change material has the following beneficial technical effects:
The first, the cohesion is strong, the lower electrode layer adopts the structure of Cr-Ag alloy coating and Cr-M alloy material layer plated on the substrate layer, cr and Ag are deposited and piled up on the surface of the substrate layer at the same time densely, the bonding strength of the lower electrode layer and the substrate layer is effectively ensured, the Cr-M alloy material layer and the Cr-Ag alloy coating have similar crystal lattices, the Cr-M alloy material layer has good interface bonding capability of the Cr-Ag alloy coating, and the influence of the double-layer structure on the cohesion is avoided;
Secondly, the consistency is good, the Cr-Ag alloy coating adopts a composite electroplating mode, the raw material proportion, the current density, the voltage, the electrode spacing and the system focusing (pH and stirring speed) are too much controlled in the electroplating process, the combination of the lower electrode layer and the substrate can be realized rapidly and efficiently, and the controllability and the consistency are stronger compared with the magnetron sputtering mode;
Thirdly, the internal resistance is small, the lower electrode layer adopts a structure of a Cr-Ag alloy plating layer and a Cr-M alloy material layer which are plated on the substrate layer, the Cr-M alloy material layer has higher strength and bonding capacity compared with a pure phase metal layer, and the influence of oxidation or sulfuration of Cu on interface contact internal resistance is avoided, so that the internal resistance of the device is effectively improved;
fourth, long performance life, because the device structure has strengthened the binding capacity of lower electrode layer and first GeSbTe material layer, second GeSbTe material layer and upper electrical machinery layer obviously, has reduced the interface contact internal resistance each other effectively, the crystalline resistance drops to the level of 70 to 80 ohms from the level about 100 ohms, the amorphous resistance is only about 1000 ohms, has reduced the apparent switching characteristic of write current and erasing current effectively, has lengthened its service life effectively;
Fifthly, the structural stability is good, the graphene layer adopts a mode of a graphene-Al-Al 2O3 powder composite powder material layer, the graphene enhances the thermal conductivity of the Al alloy, the high cost of a pure graphene film is avoided, and meanwhile, the aluminum alloy enhanced by the graphene has excellent comprehensive performance, so that the structural stability of a device is improved;
Sixthly, the self-cleaning performance is good, the protective layer adopts a double-layer structure, the hydrophobic SiO 2 film has good dustproof capability due to the gradient of compactness, the scrubbing resistance is better, and the use reliability of the device is effectively ensured.
Drawings
FIG. 1 is a schematic diagram of the overall film structure of a GeSbTe phase-change material film device with strong binding capacity and low resistance;
The labels in the drawings include: 100. 200 parts of substrate layer, 200 parts of lower electrode layer, 201 parts of Cr-Ag alloy coating, 202 parts of Cr-M alloy material layer, 300 parts of first GeSbTe material layer, 400 parts of molybdenum disulfide layer, 500 parts of second GeSbTe material layer, 600 parts of graphene layer, 700 parts of upper electrode layer, 800 parts of protective layer.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the following further details of the present invention will be described with reference to examples and drawings.
As shown in fig. 1, the invention discloses a GeSbTe phase-change material thin film device with strong bonding capability and low resistance, which comprises 100, a lower electrode layer 200, a first GeSbTe material layer 300, a molybdenum disulfide layer 400, a second GeSbTe material layer 500, a graphene layer 600, an upper electrode layer 700 and a protective layer 800, wherein the lower electrode layer 200, the first GeSbTe material layer 300, the molybdenum disulfide layer 400, the second GeSbTe material layer 500, the graphene layer 600, the upper electrode layer 700 and the protective layer 800 are sequentially arranged and overlapped on a substrate layer 100, the lower electrode layer 200 is of a double-layer composite structure, the lower electrode layer 200 comprises a Cr-Ag alloy plating layer 201 plated on the substrate layer and a Cr-M alloy material layer 202 arranged on the surface of the Cr-Ag alloy plating layer 201, and M in the Cr-M alloy material layer 202 is one of Mn, ta, taN, ti, W, ni, al, co or Cu.
Further, the graphene layer is a graphene-Al-Al 2O3 powder composite powder material layer, and the graphene-Al-Al 2O3 composite powder material layer is formed by taking alloy powder of graphene, al alloy and Al 2O3 powder as a target material and performing magnetron sputtering deposition on the surface of the second GeSbTe material layer.
Further, cr and Ag are densely deposited on the substrate layer by the double-cation composite electroplating mode at the same time by the Cr-Ag alloy coating.
Further, the mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 1-5:90-95: 10 to 15.
Further, the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of graphene dissolution, ultrasonic mixing and high-temperature sintering molding.
Further, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference.
As shown in fig. 1, the protective layer 800 is a composite double-layer structure, and the protective layer 800 includes a first protective film 801 and a second protective film 802 sequentially disposed on the surface of the graphene layer, where the first protective film 801 is a ZnS-SiO 2 film, the second protective film 802 is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Further, the first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material.
Further, the first GeSbTe material layer comprises Ti 3+、Ni2+ and/or Al 3+ doped GeSbTe phase change material.
Example 1
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Mn, ta, taN, ti, W, ni, al, co or Cu.
In this embodiment, the graphene layer is a graphene-Al 2O3 powder composite powder material layer, and the graphene-Al 2O3 composite powder material layer is deposited on the surface of the second GeSbTe material layer by magnetron sputtering using alloy powder of graphene, al alloy and Al 2O3 powder as a target. The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode. The mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 4:92:11. the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
In this embodiment, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference. The first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material. The first GeSbTe material layer comprises a Ti 3+、Al3+ doped GeSbTe phase change material.
In this embodiment, the protective layer is a composite bilayer structure, and the protective layer includes a first protective film and a second protective film sequentially disposed on the surface of the graphene layer, where the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Example 2
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance value, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Mn.
In this embodiment, the graphene layer is a graphene-Al 2O3 powder composite powder material layer, and the graphene-Al 2O3 composite powder material layer is deposited on the surface of the second GeSbTe material layer by magnetron sputtering using alloy powder of graphene, al alloy and Al 2O3 powder as a target. The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode. The mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 5:93:10. the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
In this embodiment, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference. The first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material. The first GeSbTe material layer is a Ti 3+、Ni2+ doped GeSbTe phase change material.
In this embodiment, the protective layer is a composite bilayer structure, and the protective layer includes a first protective film and a second protective film sequentially disposed on the surface of the graphene layer, where the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Example 3
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Ti.
In this embodiment, the graphene layer is a graphene-Al 2O3 powder composite powder material layer, and the graphene-Al 2O3 composite powder material layer is deposited on the surface of the second GeSbTe material layer by magnetron sputtering using alloy powder of graphene, al alloy and Al 2O3 powder as a target. The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode. The mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 3:90:115. the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
In this embodiment, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference. The first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material. The first GeSbTe material layer comprises a Ti 3+、Al3+ doped GeSbTe phase change material.
In this embodiment, the protective layer is a composite bilayer structure, and the protective layer includes a first protective film and a second protective film sequentially disposed on the surface of the graphene layer, where the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Example 4
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Ni.
In this embodiment, the graphene layer is a graphene-Al 2O3 powder composite powder material layer, and the graphene-Al 2O3 composite powder material layer is deposited on the surface of the second GeSbTe material layer by magnetron sputtering using alloy powder of graphene, al alloy and Al 2O3 powder as a target. The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode. The mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 1:95: 12. the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
In this embodiment, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference. The first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material. The first GeSbTe material layer comprises a Ni 2+ and Al 3+ doped GeSbTe phase change material.
In this embodiment, the protective layer is a composite bilayer structure, and the protective layer includes a first protective film and a second protective film sequentially disposed on the surface of the graphene layer, where the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Example 5
The invention discloses a GeSbTe phase-change material thin film device with strong binding capacity and low resistance, which comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer, wherein the lower electrode layer, the first GeSbTe material layer, the molybdenum disulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially arranged and overlapped on a substrate layer, the lower electrode layer is of a double-layer composite structure, the lower electrode layer comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, and M in the Cr-M alloy material layer is Cu.
In this embodiment, the graphene layer is a graphene-Al 2O3 powder composite powder material layer, and the graphene-Al 2O3 composite powder material layer is deposited on the surface of the second GeSbTe material layer by magnetron sputtering using alloy powder of graphene, al alloy and Al 2O3 powder as a target. The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode. The mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 2:94:12. the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
In this embodiment, the second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have an overlapping time difference. The first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material. The first GeSbTe material layer comprises a Ti 3+、Ni2+ and Al 3+ doped GeSbTe phase change material.
In this embodiment, the protective layer is a composite bilayer structure, and the protective layer includes a first protective film and a second protective film sequentially disposed on the surface of the graphene layer, where the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is less than that of the SiO 2 film.
Comparative example 1
Comparative example 1 is different from example 5 in that the upper electrode layer and the lower electrode layer of the thin film device adopt the structure of CN 106374045A.
By example 5, the batch defect stability of example 5 was improved by 35% or more compared to comparative example 1; after the upper portion of the first GST material layer was peeled off entirely by disassembling the device structure, the film peeling rate of the lower electrode layer and the substrate layer of example 5 was about 3.2%, and comparative example 1 was at a level of 26%; in terms of resistance, example 5 crystalline resistance mass stabilized at a level of 78 ohms, comparative example 1 at a level of about 100 ohms; the amorphous resistance stabilized at a level of 820 ohms, 1000 ohms for comparative example 1; example 5 generally extends about 7% over comparative example 1 over the service life. The key influence of the combination degree on the resistance value and the service life is fully described.
Comparative example 2
Comparative example 2 differs from example 5 in that a graphene layer of CN106374045A was used as the graphene layer.
By example 5, the batch defect stability of example 5 was increased by 27% or more compared to comparative example 2; by disassembling the device structure, comparative example 2 was at a level of 8.6% after the above portion of the first GST material layer was peeled off entirely; in terms of resistance, the bulk crystalline resistance was stable at a level of 95 ohms and the amorphous resistance was at a level of 950 ohms; example 5 generally extends about 4% over comparative example 2 over the service life. The thermal conductivity has a certain influence on the binding force and the service life, but has little influence on the resistance.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way; those skilled in the art can smoothly practice the invention as shown in the drawings and described above; however, those skilled in the art should not depart from the scope of the invention, and make various changes, modifications and adaptations of the invention using the principles disclosed above; meanwhile, any equivalent changes, modifications and evolution of the above embodiments according to the essential technology of the present invention still fall within the scope of the present invention.
Claims (2)
1. The utility model provides a GeSbTe phase change material thin film device that binding capacity is strong, low resistance, includes lower electrode layer, first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphite alkene layer, upper electrode layer and protective layer, lower electrode layer, first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphite alkene layer, upper electrode layer, protective layer set gradually and stack on the substrate layer, its characterized in that:
The lower electrode layer is of a double-layer composite structure and comprises a Cr-Ag alloy coating plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy coating, wherein M in the Cr-M alloy material layer is Mn, ta, taN, ti, W, ni, al, co or one of Cu;
The graphene layer is a graphene-Al-Al 2O3 powder composite powder material layer, the graphene-Al-Al 2O3 composite powder material layer is formed by taking alloy powder of graphene, al alloy and Al 2O3 powder as a target material and performing magnetron sputtering deposition on the surface of the second GeSbTe material layer, and the mass ratio of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder is 1-5:90-95: 10 to 15 percent;
The Cr-Ag alloy coating is formed by simultaneously densely depositing Cr and Ag on the substrate layer in a double-cation composite electroplating mode;
The protective layer is of a composite double-layer structure, the protective layer comprises a first protective film and a second protective film which are sequentially arranged on the surface of the graphene layer, the first protective film is a ZnS-SiO 2 film, the second protective film is a SiO 2 film, and the compactness of the ZnS-SiO 2 film is smaller than that of the SiO 2 film;
The second GeSbTe material layer starts the magnetron sputtering process of the graphene layer before the magnetron sputtering is stopped, and the second GeSbTe material layer and the magnetron sputtering process of the graphene layer have overlapping time difference; the first GeSbTe material layer is an ion doped GeSbTe phase change material layer, and the second GeSbTe material layer is a pure-phase GeSbTe phase change material; the first GeSbTe material layer comprises a Ti 3+、Ni2+ and/or Al 3+ doped GeSbTe phase change material.
2. The GeSbTe phase change material thin film device with high binding capacity and low resistance according to claim 1, wherein: the preparation process of the alloy powder of the graphene, the Al alloy and the Al 2O3 powder comprises the steps of dissolving the graphene, ultrasonic mixing and high-temperature sintering forming.
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