CN101826596B - Production method of phase-change memory - Google Patents
Production method of phase-change memory Download PDFInfo
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- CN101826596B CN101826596B CN2010101391822A CN201010139182A CN101826596B CN 101826596 B CN101826596 B CN 101826596B CN 2010101391822 A CN2010101391822 A CN 2010101391822A CN 201010139182 A CN201010139182 A CN 201010139182A CN 101826596 B CN101826596 B CN 101826596B
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Abstract
The invention relates to a production method a phase-change memory, which comprises the following steps: step 1, depositing a first insulating material layer on a substrate; step 2, depositing a metal layer on the first insulating material layer to be used as a lower electrode of the phase-change memory; step 3, preparing a phase-change material layer on the metal layer; step 4, depositing a second insulating material layer on the phase-change material layer by a thin film deposition process; step 5, preparing small holes of metal plug electrodes on the second insulating material layer by micro/nano processing technology; step 6, filling metal in the small holes to be used as plug electrodes by adopting a non-electrochemical plating method; step 7, depositing a metal material layer on the second insulating material layer to be used as an upper electrode of the phase-change memory; step 8, depositing a third insulating material layer on the metal material; step 9, carrying out passivation opening on the third insulating material layer; and step 10: depositing a metal electrode layer on the third insulating material layer and in the passivation opening again to complete the production of the phase-change memory.
Description
Technical field
The present invention relates to the microelectronic manufacturing technology field; Be particularly related to a kind of manufacture method of phase transition storage; This method has been avoided defectives such as the aperture filling quality of traditional aperture fill methods such as sputter, plating, CVD is bad, cost height, has very big superiority at breakthrough traditional metal connector electrode preparation cost restriction and aspects such as raising packing density of phase change storage and device performance high, that process is complicated.
Background technology
Phase transition storage PRAM (phase change random access memory; PRAM) be a kind of emerging semiconductor memory; Compare with present existing multiple semiconductor memory technologies; Comprise conventional volatibility technology and non-volatile technology, have component size little, low in energy consumption, can multistagely store, have extended cycle life, read at a high speed, anti-irradiation, high-low temperature resistant, anti-electronic jamming and manufacturing process advantages such as simple (can and present integrated circuit technology well be complementary).Be considered to most possible replace current main product such as present SRAM, DRAM and FLASH etc. and become following memory main product and become the semiconductor storage unit of future generation of commercial product at first.
PRAM is to be storage medium with the chalcogenide compound, utilize electric energy to make the mutual conversion of phase-change material between amorphous state (high resistant) and crystalline state (low-resistance) realize writing and wiping of information, and then realizes memory function.At present PRAM exists that operating current is excessive can to adopt the method for preparing small size connector electrode so that cmos circuit can't play the problem of driving action well, reduces the contact area of GST material and electrode, to reduce operating current.This just relates to the metal filled problem of nano-scale aperture.
At present, the method that aperture is filled mainly contain magnetron sputtering, plating, CVD etc., but they comes with some shortcomings more or less, and not strong such as the aperture filling capacity of magnetron sputtering and other sputtering method, CVD method cost is higher; Although the electro-plating method cost is low, need at first use sputtering method to prepare the layer of metal Seed Layer, and after small aperture narrowed down to a dimensioning, the metal seed layer of sputter preparation was difficult to reach even covering, and then can causes electroplating result badly.In order to overcome the deficiency of these nano-scale metal plug electrode preparation, adopt no electrochemistry electroplating method to prepare the metal plug electrode among the present invention.Chemical plating is a kind of deposition process that is different from general plating; It mainly is to utilize redox reaction that metal ion is reduced and be deposited on substrate surface. its main feature has: can not need Seed Layer in Nonconductor surfaces such as nonmetallic materials, ceramic material, macromolecular material deposition; Can be deposited on the plating piece surface of Any shape, deposition rate is even, and does not receive the shape of plating piece, the influence of size; Equipment is simply cheap, and reaction condition is gentle, is easy to control, greatly reduces the cost of product. so the present invention do not prepare nano-scale metal plug electrode with simply and cheaply there being the electrochemistry electroplating method, and it is applied in the preparation of PRAM device cell.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of phase transition storage, this method adopts chemical plating method to prepare connector electrode and connector electrode as top electrode.And its preparation process is simple, with low cost; Avoided the aperture filling quality of traditional aperture fill methods such as sputter, plating, CVD bad, defective such as cost height; The restriction that traditional metal connector electrode preparation cost is high, process is complicated be can break through, and packing density of phase change storage and device performance improved.
For achieving the above object, the present invention provides a kind of manufacture method of phase transition storage, and this method comprises:
Step 1: deposit one deck first insulation material layer on substrate;
Step 2: deposit layer of metal layer on first insulation material layer, as the bottom electrode of phase transition storage;
Step 3: preparation one deck phase-change material layers on metal level;
Step 4: on phase-change material layers with film deposition art deposit one deck second insulation material layer;
Step 5: on second insulation material layer, adopt the micro-nano process technology to prepare the aperture of metal plug electrode;
Step 6: adopt the method for no electrochemistry plating in aperture, to fill metal as the connector electrode;
Step 7: deposit layer of metal material on second insulation material layer, as the top electrode of phase transition storage;
Step 8: deposit one deck the 3rd insulation material layer on metal material;
Step 9: passivation perforate on the 3rd insulation material layer;
Step 10: on the 3rd insulation material layer and in the passivation perforate, the electrode layer of deposit layer of metal is again accomplished the making of phase transition storage.
Wherein said substrate is a semiconductive material substrate, or comprises the substrate of phase-change memorizer driver circuit.
On the wherein said substrate deposit first, second with the 3rd insulation material layer be silicon dioxide or silicon nitride; First, second is to adopt in sputtering method, evaporation, plasma assisted deposition method, CVD method, metallo-organic decomposition process, laser assisted deposition method or the thermal oxidation process any with the preparation of the 3rd insulation material layer.
Wherein said metal level and metal material as bottom electrode is a kind of in tungsten, nickel, aluminium, titanium, titanium nitride, copper, silver, gold or the platinum;
Wherein said metal level and metal material are to adopt any preparation in sputtering method, evaporation and the CVD method.
Wherein said phase-change material layers is Ge
2Sb
2Te
5, Ge
1Sb
2Te
4, Sb
2Te
3, GeTe, Si
2Sb
2Te
5Or Sb, this phase-change material layers has memory function.
Wherein said metal plug electrode aperture is with photoetching and dry etching method preparation, and the diameter of this aperture is less than 200nm.
Wherein said metal of filling at metal plug electrode aperture is nickel, copper or ni-w-p alloy.
The invention has the beneficial effects as follows:
The manufacture method of this phase transition storage provided by the invention, the metal plug electrode of nano-scale that adopted prepared such as thin-film technique, photoetching process, the filling of no electrochemistry plating aperture, and with the top electrode of this connector electrode as phase transition storage.This connector electrod-array preparation method's characteristics are: the aperture filling quality is good, and cost is low, and density is high, and preparation is convenient, has avoided the bad and high deficiencies of cost of technological aperture filling quality such as use sputter, plating, CVD.Use it for simultaneously in the making of PRAM heated by electrodes layer, method is simple, and is with low cost, realizes device function etc.
Description of drawings
For further describing concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing specifies as after, wherein:
Fig. 1 is the preparation method's of a phase transition storage provided by the invention flow chart;
Fig. 2-Figure 10 is phase-change memory device preparation method's a flowage structure sketch map.
Embodiment
See also Fig. 1 to shown in Figure 10, the present invention introduces a kind of preparation method of phase transition storage, comprises the steps:
Step 1: deposit one deck first insulation material layer 102 on substrate 101.Said substrate 101 is semiconductive material substrate silicon chips, or comprises the substrate of phase-change memorizer driver circuit; Described first insulation material layer 102 can be oxide, nitride, sulfide or by at least two kinds in oxide, nitride, the sulfide mixtures that constitute any; Said first insulation material layer 102 of on substrate, growing can be a kind of (as shown in Figure 2) of realizing of adopting in sputtering method, evaporation, plasma assisted deposition method, CVD method, metallo-organic decomposition process, laser assisted deposition method and the thermal oxidation process;
Step 2: deposit layer of metal layer 103 on first insulation material layer 102, as the bottom electrode of phase transition storage; Said metal level 103 as bottom electrode can be a kind of in tungsten, nickel, aluminium, titanium, titanium nitride, copper, silver, gold or the platinum; Said metal level 103 can be (as shown in Figure 3) of adopting a kind of preparation in sputtering method, evaporation and the CVD method;
Step 3: preparation one deck phase-change material layers 104 on metal level 103; Said phase-change material layers 104 is the phase-change alloy materials with memory function, like Ge
2Sb
2Te
5, Ge
1Sb
2Te
4, Sb
2Te
3, GeTe, Si
2Sb
2Te
5Or Sb etc. (as shown in Figure 4);
Step 4: on phase-change material layers 104 with film deposition art deposit one deck second insulation material layer 105; Described second insulation material layer 105 can be oxide, nitride, sulfide or by at least two kinds in oxide, nitride, the sulfide mixtures that constitute any; Said second insulation material layer 105 of on substrate, growing can be a kind of realization of adopting in sputtering method, evaporation, plasma assisted deposition method, CVD method, metallo-organic decomposition process, laser assisted deposition method and the thermal oxidation process; Said metal plug electrode aperture 106 be with micro-nano process technology preparation and hole diameter (as shown in Figure 5) below 200nm;
Step 5: on second insulation material layer 105, adopt the micro-nano process technology to prepare the aperture 106 of metal plug electrode; The aperture 106 of said metal plug electrode be with micro-nano process technology preparation and hole diameter (as shown in Figure 6) below 200nm;
Step 6: adopt the method for no electrochemistry plating in aperture 106, to fill metal 107 as the connector electrode; Metal materials (as shown in Figure 7) such as the monobasic that said metal 107 of in metal plug electrod-array aperture, filling is nickel, copper or other metal, binary, ternary alloy three-partalloy;
Step 7: deposit layer of metal material 108 on second insulation material layer 105, as the top electrode of phase transition storage; Said metal material 108 as top electrode can be a kind of in tungsten, nickel, aluminium, titanium, titanium nitride, copper, silver, gold or the platinum; Said metal material 108 can be (as shown in Figure 8) of adopting a kind of preparation in sputtering method, evaporation and the CVD method;
Step 8: deposit one deck the 3rd insulation material layer 109 on metal material 108; Described the 3rd insulation material layer 109 can be oxide, nitride, sulfide or by at least two kinds in oxide, nitride, the sulfide mixtures that constitute any; Said the 3rd insulation material layer 109 of on substrate, growing can be a kind of (as shown in Figure 9) of realizing of adopting in sputtering method, evaporation, plasma assisted deposition method, CVD method, metallo-organic decomposition process, laser assisted deposition method and the thermal oxidation process;
Step 9: passivation perforate 110 on the 3rd insulation material layer 109, on the 3rd insulation material layer 109 and in the passivation perforate 110, the electrode layer of deposit layer of metal again 111 is accomplished the making of phase transition storage.Said metal electrode layer 111 can be a kind of (shown in figure 10) in tungsten, nickel, aluminium, titanium, titanium nitride, copper, silver, gold or the platinum.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the manufacture method of a phase transition storage, this method comprises:
Step 1: deposit one deck first insulation material layer on substrate;
Step 2: deposit layer of metal layer on first insulation material layer, as the bottom electrode of phase transition storage;
Step 3: preparation one deck phase-change material layers on metal level;
Step 4: on phase-change material layers with film deposition art deposit one deck second insulation material layer;
Step 5: on second insulation material layer, adopt the micro-nano process technology to prepare the aperture of metal plug electrode;
Step 6: adopt the method for no electrochemistry plating in aperture, to fill metal as the connector electrode;
Step 7: deposit layer of metal material on second insulation material layer, as the top electrode of phase transition storage;
Step 8: deposit one deck the 3rd insulation material layer on metal material;
Step 9: on the 3rd insulation material layer, form the passivation perforate;
Step 10: on the 3rd insulation material layer and in the passivation perforate, the electrode layer of deposit layer of metal is again accomplished the making of phase transition storage.
2. the manufacture method of phase transition storage according to claim 1, wherein said substrate is a semiconductive material substrate.
3. the manufacture method of phase transition storage according to claim 1, first, second of deposit is silicon dioxide or silicon nitride with the 3rd insulation material layer on the wherein said substrate; First, second is to adopt in sputtering method, evaporation, plasma assisted deposition method, CVD method, metallo-organic decomposition process, laser assisted deposition method or the thermal oxidation process any with the preparation of the 3rd insulation material layer.
4. the manufacture method of phase transition storage according to claim 1, wherein said metal level and metal material as bottom electrode are a kind of in tungsten, nickel, aluminium, titanium, titanium nitride, copper, silver, gold or the platinum.
5. the manufacture method of phase transition storage according to claim 1, wherein said metal level and metal material are to adopt any preparation in sputtering method, evaporation and the CVD method.
6. the manufacture method of phase transition storage according to claim 1, wherein said phase-change material layers is Ge
2Sb
2Te
5, Ge
1Sb
2Te
4, Sb
2Te
3, GeTe, Si
2Sb
2Te
5Or Sb, this phase-change material layers has memory function.
7. the manufacture method of phase transition storage according to claim 1, the aperture of wherein said metal plug electrode is with photoetching and dry etching method preparation, and the diameter of this aperture is less than 200nm.
8. the manufacture method of phase transition storage according to claim 1, wherein said metal of filling at the aperture of metal plug electrode is nickel, copper or ni-w-p alloy.
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| CN105172255B (en) * | 2015-07-17 | 2017-04-12 | 中国科学技术大学 | Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof |
| CN107481948B (en) * | 2016-06-08 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Layout structure of process window for simultaneously detecting multiple bottom contact plugs |
| CN109686755B (en) * | 2018-12-26 | 2022-07-05 | 上海集成电路研发中心有限公司 | High-density phase change memory and preparation method thereof |
| CN109920911B (en) * | 2019-03-06 | 2023-04-25 | 中国科学院微电子研究所 | Preparation method of resistive random access memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1828923A (en) * | 2005-02-17 | 2006-09-06 | 三星电子株式会社 | Phase change memory devices and fabrication methods thereof |
| CN1988200A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Gas wall electrode side connection phase shift storage and its producing method |
| CN1996572A (en) * | 2006-01-03 | 2007-07-11 | 三星电子株式会社 | Method of fabricating phase change ram |
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| US7642125B2 (en) * | 2007-09-14 | 2010-01-05 | Macronix International Co., Ltd. | Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
| US8178386B2 (en) * | 2007-09-14 | 2012-05-15 | Macronix International Co., Ltd. | Phase change memory cell array with self-converged bottom electrode and method for manufacturing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1828923A (en) * | 2005-02-17 | 2006-09-06 | 三星电子株式会社 | Phase change memory devices and fabrication methods thereof |
| CN1988200A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Gas wall electrode side connection phase shift storage and its producing method |
| CN1996572A (en) * | 2006-01-03 | 2007-07-11 | 三星电子株式会社 | Method of fabricating phase change ram |
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