CN103794723A - Phase change memory unit and method for manufacturing phase change memory unit - Google Patents
Phase change memory unit and method for manufacturing phase change memory unit Download PDFInfo
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- CN103794723A CN103794723A CN201410077462.3A CN201410077462A CN103794723A CN 103794723 A CN103794723 A CN 103794723A CN 201410077462 A CN201410077462 A CN 201410077462A CN 103794723 A CN103794723 A CN 103794723A
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Abstract
The invention provides a phase change memory unit and a method for manufacturing the phase change memory unit. A memory medium layer of the phase change memory unit is a superlattice thin film structure which is composed of an Sb[x]Te[1-x] layer and a Ti[y]Te[1-y] layer, and then a stable layered (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material is obtained, wherein 0.4<=x<=0.8, 0.33<=y<=0.56, the thickness of the Sb[x]Te[1-x] layer is between 1 nm and 10 nm, and the thickness of the Ti[y]Te[1-y] layer is between 1 nm and 10 nm. The phase-change mechanism of the superlattice (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material manufactured with the method is completely different from that of a traditional Ge-Sb-Te phase change material, and thus an obtained phase change memory device has the advantages of being lower in power consumption, higher in phase change speed, higher in retentivity, longer in service life and the like.
Description
Technical field
The present invention relates to semiconductor manufactured materials field, particularly relate to a kind of phase-changing memory unit and preparation method thereof.
Background technology
Memory is the important component part of current semi-conductor market, is the foundation stone of information technology, no matter in life, still in national economy, plays an important role.Amount of information is accompanied by social development sharply to be increased, and the research and development of the memory of the high density of data storage become memory researcher's vital task.Wherein, the advantages such as phase-changing memory unit reads at a high speed owing to having, high erasable number of times, non-volatile, component size is little, low in energy consumption, anti-strong motion and radioresistance, are thought by international semiconductor TIA flash memories that most possible replacement is current and become the device of following memory main product and become at first the device of commercial product.
The basic principle of phase transition storage is to utilize the reversible transition of storage medium between high resistance and low resistance in device to realize the storage of " 1 " and " 0 ".Can realize multistage storage by utilizing signal of telecommunication control to realize the high-resistance continuous variation of storage medium, thereby significantly improve the information storage capability of memory.In phase transition storage, utilize the reversible transition of phase-change material between amorphous and polycrystalline to realize above-mentioned resistance variations.Conventional phase-change storage material system is mainly telluro material, as Ge-Sb-Te, Si-Sb-Te, Ag-In-Sb-Te etc.Particularly GST (Ge-Sb-Te) has been widely used in phase change disc and phase transition storage.But also there are the following problems: 1, write operation speed is slow, and phase velocity needs further to be improved; 2, wiping operation power consumption is high, is unfavorable for the lifting of storage density, in view of these shortcomings, needs to explore the storage medium with better performance.
Therefore, how to provide a kind of novel phase-change material to comprise novel device unit construction, make the New-type phase change memory based on this material, structure there is better thermal stability, phase velocity faster, less operation power consumption and higher cycling life-span are current techniques field urgent problems.
Summary of the invention
The shortcoming of prior art, the object of the present invention is to provide a kind of phase-changing memory unit and preparation method thereof in view of the above, and for solving, prior art memory device phase velocity is slow, operation power consumption is high, the life-span is short, the problem of poor heat stability.
For achieving the above object and other relevant objects, the invention provides a kind of phase-changing memory unit, it comprises phase-change material layers, and described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, described individual layer phase-change material Sb
xte
1-xthe thickness range of layer is 1～10nm, described single-layered compound Ti
yte
1-ythe thickness range of layer is 1～10nm.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, described individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ythe stacking number of times of circulation of layer is 3～25 cycles.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, the total thickness of the phase change region undergoing phase transition in described phase transformation superlattice film structure is 6～500nm.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, individual layer phase-change material Sb in described phase transformation superlattice film structure
xte
1-xthe initial condition of layer is amorphous state or the crystalline state after heat treated.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, single-layered compound Ti in described phase transformation superlattice film structure
yte
1-ythe initial condition of layer is amorphous state or the crystalline state after heat treated.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, described phase-changing memory unit is restricted type structure or T-shaped structure.
The present invention also provides a kind of preparation method of phase-changing memory unit, and described preparation method at least comprises the following steps:
1) provide a growth substrates that is manufactured with bottom electrode;
2) at described growth substrates surface deposition medium coating layer;
3) utilize described in exposure-etching technics etching medium coating layer until form the deposition hole of the described bottom electrode of exposure in described medium coating layer;
4) sediment phase change material layer and top electrode successively in described deposition hole, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
As the scheme of a kind of optimization of the preparation method of phase-changing memory unit of the present invention, adopt physical vapour deposition (PVD), chemical vapour deposition (CVD) or deposition of metal organic technique to prepare described phase-change material layers.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, described individual layer phase-change material Sb
xte
1-xthe thickness range of layer is 1～10nm, described single-layered compound Ti
yte
1-ythe thickness range of layer is 1～10nm.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, described individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ythe stacking number of times of circulation of layer is 3～25 cycles.
As the scheme of a kind of optimization of phase-changing memory unit of the present invention, the total thickness of the phase change region undergoing phase transition in described phase transformation superlattice film structure is 6～500nm.
As the scheme of a kind of optimization of the preparation method of phase-changing memory unit of the present invention, described in the one that powers in very Al, W or TiN; Described bottom electrode is the one in Al, W or TiN; Described medium coating layer is SiO
2or Si
3n
4.
As mentioned above, phase-changing memory unit provided by the invention, it comprises phase-change material layers, described phase-change material layers is by individual layer phase-change material Tb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.The preparation technology of the superlattice film structure in phase-changing memory unit of the present invention and existing CMOS process compatible, and have and GST(Ge-Sb-Te) the different phase-change mechanism of material, it has the following advantages:
First, the crystal of the Ti-Te in selected interval can be used as the Stability Analysis of Structures layer of amorphous Sb-Te, makes Sb-Te be difficult for spontaneous crystallization, has promoted thermal stability and the confining force of phase-change material layers, makes ten annual data confining force corresponding temperatures of phase-change material layers higher than 120 ℃;
Secondly, the crystal of selected interval Ti-Te, is applying the crystallization inducing layer that can be used as amorphous Sb-Te after external energy, ensures the phase velocity of phase-change material floor height, makes phase transition storage have erasable operating time of picosecond, improves the service speed of phase transition storage;
Again, Sb
xte
1-xthe easy disordering of phase change layer and superlattice structure entirety have lower thermal conductivity, can reduce erasable operating current, are beneficial to reduce power consumption;
Finally, phase change region only appears at superlattice film structure Ti Te/SbTe interface, controls the thickness of each layer film, can obtain the memory cell of low-power consumption, and then reduces thermal shock, extends the life-span of device cell, makes cycle-index higher than 10
5, the reliability of assurance device.
Accompanying drawing explanation
Fig. 1 is the phase change memory unit structure schematic diagram of restricted type structure of the present invention.
Fig. 2 is the phase change memory unit structure schematic diagram of the T-shaped structure of the present invention.
Fig. 3 is the electrical operation performance curve of the existing memory cell based on GST phase-change material.
Fig. 4 is the electrical operation performance curve that the present invention is based on the memory cell of superlattice film structure.
Fig. 5 is existing memory cell based on GST phase-change material and of the present invention based on TST(Sb
xte
1-x-Ti
yte
1-y) the thermal stability comparison diagram of memory cell of phase-change material.
Element numbers explanation
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
Embodiment mono-
The invention provides a kind of phase-changing memory unit, as shown in Figure 1, it comprises growth substrates, bottom electrode 103, medium coating layer 104, phase-change material layers (being phase transformation superlattice film structure 102) and top electrode 101.
As example, described phase-changing memory unit can be restricted type structure or T-shaped structure, if Fig. 1 is the structure of restricted type phase-changing memory unit provided by the invention; As Fig. 2 structure that is T-shaped phase-changing memory unit provided by the invention.
Described growth substrates can be sheet glass or silicon oxide substrate.In the present embodiment, described growth substrates is silicon oxide substrate.
Described bottom electrode 103 is made in described growth substrates, and the material of described bottom electrode 103 can be Al, W, TiN or other electric conducting materials, and thickness, within the scope of 50～200nm, can be 100nm in a concrete implementation process.
Described phase-change material layers is formed on described bottom electrode 103, for storage information, is the core in phase-changing memory unit.Described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.That is, described phase-change material layers is phase transformation superlattice film structure, take Fig. 1 as example, comprises the first phase transformation superlattice film structure 1 and the second phase transformation superlattice film structure 2 etc.. particularly, phase-change material layers is that phase transformation superlattice film structure comprises a Sb
xte
1-xlayer 1 (a), be positioned at a Sb
xte
1-xthe first compound Ti on layer 1 (a)
yte
1-ylayer 1 (b), be positioned at the first compound Ti
yte
1-ythe 2nd Sb on layer 1 (b)
xte
1-xlayer 2 (a), be positioned at the 2nd Sb
xte
1-xthe second compound Ti on layer 2 (a)
yte
1-ylayer 2 (b) ... by that analogy, can periodically repeat this structure, until the thickness of the phase-change material layers suiting the requirements.
Preferably, described individual layer phase-change material Sb
xte
1-xthe thickness range of layer is 1～10nm, described single-layered compound Ti
yte
1-ythe thickness range of layer is 1～10nm.In the present embodiment, described individual layer phase-change material Sb
xte
1-xthe thickness of layer is elected 8nm as, described single-layered compound Ti temporarily
yte
1-ythe thickness of layer is elected 3nm temporarily as.Preferably, the total thickness of described phase transformation superlattice film structure is 6～500nm, described individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ythe stacking number of times of circulation of layer can be 3～25 cycles.In addition, individual layer phase-change material Sb in described phase transformation superlattice film structure
xte
1-xlayer and single-layered compound Ti
yte
1-ythe initial condition of layer can be all amorphous state or the crystalline state after heat treated.
Embodiment bis-
The preparation method of the phase-changing memory unit of above-mentioned restricted type structure comprises the following steps:
First, provide a growth substrates that is manufactured with bottom electrode 103.
Before carrying out subsequent technique, first described growth substrates is cleaned, can remove the impurity such as the organic substance, metal ion, oxide on described growth substrates surface, be conducive to improve the stability of device.Described bottom electrode 103 is tungsten electrode, and thickness is 50～200nm, in a concrete implementation process, is 100nm.
Then, at described growth substrates surface deposition medium coating layer 104.
Deposition medium coating layer 104 can be SiO
2or Si
3n
4.In the present embodiment, described medium coating layer is preferably Si
3n
4.
Then, utilize described in exposure-etching technics etching medium coating layer 104 until form the deposition hole of the described bottom electrode 103 of exposure in described medium coating layer 104.
In the present embodiment, the exposure method that described exposure-etching technics adopts is electron beam exposure, and lithographic method is reactive ion etching.The aperture in described deposition hole and the equal diameters of described bottom electrode 103.Described deposition hole can be that aperture is the aperture below 100nm, certainly, can be also the through hole that is more than or equal to 100nm.In the present embodiment, the aperture in described deposition hole is 30～100nm, and particularly, the aperture in described deposition hole is 80nm.Also having another embodiment is that the aperture in described deposition hole is 20～60nm, is specially 50nm.
Finally, sediment phase change material layer (phase transformation superlattice film structure 102) and top electrode 101 successively in described deposition hole, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
Particularly, the structure of above-mentioned acquisition is sent into magnetron sputtering reaction chamber and carry out physical vapour deposition (PVD), then utilize two target sputters or alloys target to sputter at and form required thin layer.
As example, the sputtering power of the present embodiment Sb target is set to 35 watts, and the sputtering power of Te target is set to 10 watts, and sputter rate is set to 3nm/min, treats that base vacuum is lower than 3 × 10
-4pascal, opens radio-frequency power supply.Open two target target lid timing, after sputter finishes, close two target radio-frequency power supplies and target lid, the individual layer phase-change material that now sputter forms is Sb
0.4te
0.6layer, described individual layer phase-change material Sb
0.4te
0.6layer thickness is 8nm.
Certainly, in other embodiments, directly sputter Sb
0.4te
0.6the alloys target Sb that grows
0.4te
0.6film, by controlling sputter temperature, obtains the amorphous state of desired thickness or the Sb of crystalline state
0.4te
0.6film.
Obtain Sb
0.4te
0.6after phase-change thin film, then sputter compound layer Ti on this film
0.33te
0.67.
As example, the sputtering power of the present embodiment Ti target is set to 50 watts, and the sputtering power of Te target is set to 15 watts, and sputter rate is set to 2nm/min, treats that base vacuum is lower than 3 × 10
-4pascal, opens radio-frequency power supply.Open two target target lid timing, after sputter finishes, close two target radio-frequency power supplies and target lid, the single-layered compound layer that now sputter forms is Ti
0.33te
0.67layer, described individual layer phase-change material Ti
0.33te
0.67layer thickness is 3nm.
Certainly, in other embodiments, directly sputtered with Ti
0.33te
0.67the alloys target Ti that grows
0.33te
0.67film, by controlling sputter temperature, obtains the amorphous state of desired thickness or the Ti of crystalline state
0.33te
0.67film.
Repeat the above individual layer phase-change material Sb for preparing
0.4te
0.6layer and single-layered compound layer are Ti
0.33te
0.67the step of layer, until sputter forms 10 by individual layer phase-change material Sb in deposition hole
0.4te
0.6layer and single-layered compound layer are Ti
0.33te
0.67the phase transformation superlattice film structure that layer circulation is stacking.
The material of described top electrode can be Al, W, TiN or other electric conducting materials, the very Al material that powers on described in the present embodiment, and thickness, within the scope of 50～200nm, can be 100nm in a concrete implementation process.It should be noted that, before making top electrode, can, first in described phase transformation superlattice film body structure surface growth one deck TiN adhesive electrodes, be used for increasing the adhesiveness between top electrode and phase transformation superlattice film structure.
Referring to Fig. 3 and Fig. 4, is respectively the memory cell based on GST phase-change material and the electrical operation performance curve that the present invention is based on the memory cell of superlattice film structure.Can find out through contrast, of the present invention based on TST(Sb
xte
1-x-Ti
yte
1-y) external voltage that applies of the memory cell of phase-change material is less, phase velocity is higher, and power consumption is also lower, and this is owing to applying after external energy, Ti
yte
1-ycrystal can be used as the crystallization inducing layer of amorphous Sb-Te, thereby guarantees high phase velocity.
Be illustrated in figure 5 the ten annual data hold facilities take phase transformation superlattice film of the present invention as basic phase-change memory cell, can find out, in prior art, can only remain on 87 ℃ take GST phase-change material as basic phase-changing memory unit ten annual datas, and the present invention can remain on 151 ℃, its thermal stability is better.
Embodiment tri-
In Fig. 2, the preparation method of the phase-changing memory unit of T-shaped structure comprises the following steps:
First, provide a growth substrates that is manufactured with bottom electrode 203.
Before carrying out subsequent technique, first described growth substrates is cleaned, can remove the impurity such as the organic substance, metal ion, oxide on described growth substrates surface, be conducive to improve the stability of device.Described bottom electrode 203 is tungsten electrode, and thickness is 50～200nm, in a concrete implementation process, is 100nm.
Sediment phase change material layer (phase transformation superlattice film structure 202) and top electrode 201 successively in described deposition hole, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
Then, utilize superlattice film structure 202 described in exposure-etching technics etching, until expose substrate 203, cut off different bottom electrodes top superlattice film structure with physics.
Then, deposition medium coating layer 204 in the good superlattice film structure of described etching, until completely completely coated by superlattice film structure 202.Deposition medium coating layer 204 can be SiO
2or Si
3n
4.In the present embodiment, described medium coating layer 204 is preferably Si
3n
4.
Thereafter, the medium that utilizes exposure-etching technics etching superlattice film structural top to cover is coated thin layer until expose superlattice film top, forms deposition hole so that deposition 201 electrodes.
In the present embodiment, the exposure method that described exposure-etching technics adopts is electron beam exposure, and lithographic method is reactive ion etching.
Particularly, the structure of above-mentioned acquisition is sent into magnetron sputtering reaction chamber, then utilize two target sputters or alloys target to sputter at and form required thin layer.
As example, the sputtering power of the present embodiment Sb target is set to 40 watts, and the sputtering power of Te target is set to 7 watts, and sputter rate is set to 3.5nm/min, treats that base vacuum is lower than 3 × 10
-4pascal, opens radio-frequency power supply.Open two target target lid timing, after sputter finishes, close two target radio-frequency power supplies and target lid, the individual layer phase-change material that now sputter forms is Sb
0.67te
0.33layer, described individual layer phase-change material Sb
0.67te
0.33layer thickness is 6nm.
Certainly, in other embodiments, directly sputter Sb
0.67te
0.33the alloys target Sb that grows
0.67te
0.33film, by controlling sputter temperature, obtains the amorphous state of desired thickness or the Sb of crystalline state
0.67te
0.33film.
Obtain Sb
0.67te
0.33after phase-change thin film, then sputter compound layer Ti on this film
0.55te
0.45.
As example, the sputtering power of the present embodiment Ti target is set to 30 watts, and the sputtering power of Te target is set to 18 watts, and sputter rate is set to 1.5nm/min, treats that base vacuum is lower than 3 × 10
-4pascal, opens radio-frequency power supply.Open two target target lid timing, after sputter finishes, close two target radio-frequency power supplies and target lid, the single-layered compound layer that now sputter forms is Ti
0.55te
0.45layer, described individual layer phase-change material Ti
0.55te
0.45layer thickness is 2nm.
Certainly, in other embodiments, directly sputtered with Ti
0.55te
0.45the alloys target Ti that grows
0.55te
0.45film, by controlling sputter temperature, obtains the amorphous state of desired thickness or the Ti of crystalline state
0.55te
0.45film.
Repeat the above individual layer phase-change material Sb for preparing
0.67te
0.33layer and single-layered compound layer are Ti
0.55te
0.45the step of layer, until sputter forms 10 by individual layer phase-change material Sb in deposition hole
0.67te
0.33layer and single-layered compound layer are Ti
0.55te
0.45the phase transformation superlattice film structure that layer circulation is stacking.
The material of described top electrode 201 can be Al, W, TiN or other electric conducting materials, the very Al material that powers on described in the present embodiment, and thickness, within the scope of 50～200nm, can be 100nm in a concrete implementation process.It should be noted that, before making top electrode, can, first in described phase transformation superlattice film body structure surface growth one deck TiN adhesive electrodes, be used for increasing the adhesiveness between top electrode and phase transformation superlattice film structure.
In sum, phase-changing memory unit provided by the invention, it comprises phase-change material layers, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.The preparation technology of the superlattice film structure in phase-changing memory unit of the present invention and existing CMOS process compatible, and have and GST(Ge-Sb-Te) the different phase-change mechanism of material, it has the following advantages: first, the crystal of the Ti-Te in selected interval can be used as the Stability Analysis of Structures layer of amorphous Sb-Te, make Sb-Te be difficult for spontaneous crystallization, promote thermal stability and the confining force of phase-change material layers, made ten annual data confining force corresponding temperatures of phase-change material layers higher than 120 ℃; Secondly, the crystal of selected interval Ti-Te, is applying the crystallization inducing layer that can be used as amorphous Sb-Te after external energy, ensures the phase velocity of phase-change material floor height, makes phase transition storage have erasable operating time of picosecond, improves the service speed of phase transition storage; Again, Sb
xte
1-xthe easy disordering of phase change layer and have lower thermal conductivity, can reduce the electric current that erasable operation needs more, is beneficial to reduce power consumption; Finally, phase change region only appears at superlattice film structure Ti Te/SbTe interface, controls the thickness of each layer film, can obtain the memory cell of low-power consumption, and then reduces thermal shock, extends the life-span of device cell, makes cycle-index higher than 10
5, the reliability of assurance device.
So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (13)
1. a phase-changing memory unit, it comprises phase-change material layers, it is characterized in that, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
2. phase-changing memory unit according to claim 1, is characterized in that: described individual layer phase-change material Sb
xte
1-xthe thickness range of layer is 1～10nm, described single-layered compound Ti
yte
1-ythe thickness range of layer is 1～10nm.
3. phase-changing memory unit according to claim 1, is characterized in that: described individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ythe stacking number of times of circulation of layer is 3～25 cycles.
4. phase-changing memory unit according to claim 1, is characterized in that: the phase change region total thickness undergoing phase transition in described phase transformation superlattice film structure is 6～500nm.
5. phase-changing memory unit according to claim 1, is characterized in that: individual layer phase-change material Sb in described phase transformation superlattice film structure
xte
1-xthe initial condition of layer is amorphous state or the crystalline state after heat treated.
6. phase-changing memory unit according to claim 1, is characterized in that: single-layered compound Ti in described phase transformation superlattice film structure
yte
1-ythe initial condition of layer is amorphous state or the crystalline state after heat treated.
7. phase-changing memory unit according to claim 1, is characterized in that: described phase-changing memory unit is restricted type structure or T-shaped structure.
8. a preparation method for phase-changing memory unit, is characterized in that, described preparation method at least comprises the following steps:
1) provide a growth substrates that is manufactured with bottom electrode;
2) at described growth substrates surface deposition medium coating layer;
3) utilize described in exposure-etching technics etching medium coating layer until form the deposition hole of the described bottom electrode of exposure in described medium coating layer;
4) sediment phase change material layer and top electrode successively in described deposition hole, described phase-change material layers is by individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ylayer alternately vertical stacking is grown and the phase transformation superlattice film structure of formation, wherein, and 0.4≤x≤0.8,0.33≤y≤0.56.
9. the preparation method of phase-changing memory unit according to claim 8, is characterized in that: adopt physical vapour deposition (PVD), chemical vapour deposition (CVD) or deposition of metal organic technique to deposit in described deposition hole and form described phase-change material layers.
10. the preparation method of phase-changing memory unit according to claim 8, is characterized in that: described individual layer phase-change material Sb
xte
1-xthe thickness range of layer is 1～10nm, described single-layered compound Ti
yte
1-ythe thickness range of layer is 1～10nm.
The preparation method of 11. phase-changing memory units according to claim 8, is characterized in that: described individual layer phase-change material Sb
xte
1-xlayer and single-layered compound Ti
yte
1-ythe stacking number of times of circulation of layer is 3～25 cycles.
The preparation method of 12. phase-changing memory units according to claim 8, is characterized in that: the phase change region total thickness undergoing phase transition in described phase transformation superlattice film structure is 6～500nm.
The preparation method of 13. phase-changing memory units according to claim 8, is characterized in that: described in the one that powers in very Al, W or TiN; Described bottom electrode is the one in Al, W or TiN; Described medium coating layer is SiO
2or Si
3n
4.
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| CN106654005A (en) * | 2015-10-30 | 2017-05-10 | 中国科学院上海微***与信息技术研究所 | Phase change material layer, phase change memory unit and preparation method thereof |
| CN108461628A (en) * | 2018-03-02 | 2018-08-28 | 中国科学院上海微***与信息技术研究所 | Self-heating phase-change memory cell and self-heating phase change storage structure |
| CN108666416A (en) * | 2017-04-01 | 2018-10-16 | 中国科学院上海微***与信息技术研究所 | Phase-changing memory unit and preparation method thereof |
| CN108987567A (en) * | 2018-06-05 | 2018-12-11 | 深圳大学 | Phase transformation superlattice film, phase-changing memory unit and preparation method thereof |
| CN110571329A (en) * | 2019-08-16 | 2019-12-13 | 华中科技大学 | High-reliability phase-change material, phase-change memory and preparation method |
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| CN110931635A (en) * | 2019-10-28 | 2020-03-27 | 华中科技大学 | Low-density-change superlattice phase change film, phase change memory and preparation method of phase change film |
| CN113140674A (en) * | 2021-04-02 | 2021-07-20 | 华为技术有限公司 | Phase change material suitable for phase change memory and phase change memory |
| CN113346012A (en) * | 2021-04-30 | 2021-09-03 | 华中科技大学 | Non-melting superlattice phase change film material |
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| CN110828661A (en) * | 2018-08-08 | 2020-02-21 | 原子能与替代能源委员会 | Memory element |
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| CN110931635A (en) * | 2019-10-28 | 2020-03-27 | 华中科技大学 | Low-density-change superlattice phase change film, phase change memory and preparation method of phase change film |
| CN113140674A (en) * | 2021-04-02 | 2021-07-20 | 华为技术有限公司 | Phase change material suitable for phase change memory and phase change memory |
| CN113346012A (en) * | 2021-04-30 | 2021-09-03 | 华中科技大学 | Non-melting superlattice phase change film material |
| CN115117239A (en) * | 2021-06-11 | 2022-09-27 | 华为技术有限公司 | Phase change memory unit, phase change memory, electronic equipment and preparation method |
| WO2022257935A1 (en) * | 2021-06-11 | 2022-12-15 | 华为技术有限公司 | Phase-change memory cell, phase-change memory, electronic device and preparation method |
| CN115117239B (en) * | 2021-06-11 | 2023-08-22 | 华为技术有限公司 | Phase-change memory cell, phase-change memory, electronic equipment and preparation method |
| CN113611798A (en) * | 2021-07-02 | 2021-11-05 | 深圳大学 | Preparation method of multilayer phase change film and phase change memory unit thereof |
| CN113611798B (en) * | 2021-07-02 | 2023-08-29 | 深圳大学 | Multilayer phase-change film and preparation method of phase-change memory unit thereof |
| CN115101666A (en) * | 2022-01-30 | 2022-09-23 | 华为技术有限公司 | Phase change material, phase change memory chip, memory device and electronic device |
| WO2023143587A1 (en) * | 2022-01-30 | 2023-08-03 | 华为技术有限公司 | Phase-change material, phase-change storage chip, storage device and electronic device |
| WO2023193754A1 (en) * | 2022-04-06 | 2023-10-12 | 华为技术有限公司 | Phase-change storage material and preparation method therefor, phase-change storage chip and device |
| WO2024001426A1 (en) * | 2022-06-30 | 2024-01-04 | 华中科技大学 | Phase-change thin film, thin film preparation method, and phase-change memory |
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