CN111405772B - Surface treatment method for semiconductor device - Google Patents
Surface treatment method for semiconductor device Download PDFInfo
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- CN111405772B CN111405772B CN202010160147.2A CN202010160147A CN111405772B CN 111405772 B CN111405772 B CN 111405772B CN 202010160147 A CN202010160147 A CN 202010160147A CN 111405772 B CN111405772 B CN 111405772B
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a surface treatment method of a semiconductor device, which comprises the following steps: s1, preprocessing the first metal base material; s2, electrolytically precipitating a first plating layer on at least a part of the outer surface of the first metal substrate with a clean surface; s3, carrying out micro-etching treatment on the first plating layer; s4, disposing a photosensitive film on the first plating layer processed in the step S3, and exposing and developing the photosensitive film, wherein the photosensitive film corresponding to one of the non-exposure region and the exposure region is dissolved to expose the metal surface, and the photosensitive film corresponding to the other of the non-exposure region and the exposure region is not dissolved; s5, electroplating the region where the first plating layer is exposed to form a second plating layer; s6, removing the photosensitive film corresponding to the non-exposure area and the other exposure area; and S7, etching at least a part of the first metal base material and the first plating layer of the product obtained in the step S6. The surface treatment method of the semiconductor device can improve the product quality.
Description
Technical Field
The invention belongs to the technical field of manufacturing of semiconductor devices, and particularly relates to a surface treatment method of a semiconductor device.
Background
In the field of semiconductor device manufacturing technology, when an electronic device is manufactured by using a metal plate as a raw material, the metal plate is usually manufactured into the electronic device in various required shapes by punching or etching, and then a specific portion is subjected to surface treatment to obtain a corresponding electroplated product.
When the local surface treatment is needed for the metal electronic devices with various shapes, the required electroplating products can be obtained by carrying out the surface treatment after the areas which do not need to be electroplated are shielded by the corresponding moulds. However, in recent years, as the shapes of electronic devices have been made finer and more complicated, the method of surface treatment using a local area plating die has not been able to satisfy the requirement of precision in plating a fine area; in particular, various metal lead frames and surface treatment techniques for metal printed wiring boards in the semiconductor device manufacturing technology have reached the limit.
Accordingly, a technology for etching a metal material, which has been rapidly developed, has been widely used and developed.
Patent document 1(CN 101864586B) describes that a metal plate is cut into a sheet according to the size of a lead frame, the sheet is pretreated by degreasing and acid washing and dried, then the upper and lower surfaces of the metal plate are hot-pressed with photosensitive films, the lead frame with the photosensitive films attached thereto is exposed by ultraviolet light through a die with a specially-made lead frame pattern, and the lead frame is treated with a developing solution, the unexposed photosensitive films of the lead frame are dissolved to expose the metal surface, and the exposed photosensitive films cannot be dissolved; only the area of the exposed metal surface can be electroplated in the subsequent surface treatment process; and then, removing the exposed photosensitive film by using a stripping solution, and selectively etching and removing the exposed metal by using an etching solution so as to achieve the purpose of selective local electroplating, thereby obtaining a single-side electroplated product of the lead frame. However, this method has a problem that the photosensitive film is not firmly bonded to the metal surface, causing the plating solution to penetrate into the gap between the photosensitive film and the metal to be plated and causing minute portions of the etched region to be not etched or not etched at all.
Patent document 2 (JP 2011-. Firstly, carrying out hot-pressing treatment on the upper surface and the lower surface of a metal sheet by using photosensitive films, then exposing a lead frame of the hot-pressing photosensitive films by using ultraviolet light through a die with a special lead frame pattern, carrying out surface treatment on the exposed metal by using an electroplating solution after dissolving the unexposed photosensitive films of the lead frame to expose the metal surface, and removing the exposed photosensitive films by using a stripping solution to obtain the lead frame electroplated on the front surface and the back surface of the metal sheet; and carrying out hot-pressing treatment on the front surface and the back surface of the electroplating lead frame by using photosensitive films, then carrying out exposure, development, surface treatment, stripping to remove the exposed photosensitive films, and etching to obtain the electroplating products of the lead frame with different shapes on the front surface and the back surface. However, when the stripping of the exposed photosensitive film on the electroplating surface is incomplete, the method has photosensitive film residues, so that the product quality does not meet the specification requirement.
Patent document 3 (japanese patent JP 2019-178418A) discloses a method of manufacturing a multilayer printed wiring board by an etching technique using a metal foil as a raw material, according to the following steps.
(1) And carrying out photosensitive film hot-pressing treatment, exposure and development on the metal foil.
(2) And electroplating the exposed metal region to remove the photosensitive film to obtain the metal copper foil with the electroplated printed circuit.
(3) To protect the electroplated printed circuit, an embedded resin layer is poured with resin, and a second metal foil is embedded on the resin layer.
(4) The plating surface of the printed wiring is exposed in a predetermined area by laser drilling.
(5) The opening area is embedded with copper.
(6) And carrying out photosensitive film hot-pressing treatment, exposure, development and electroplating on the metal foil, and removing the photosensitive film to obtain a second layer of electroplated printed circuit.
(7) And etching to remove the metal foil layers on the upper and lower surfaces to obtain the electroplated surface of the printed circuit exposed in the resin layer.
However, the manufacturing process of the multilayer printed circuit board is complicated, and for example, the processing processes of film pasting, exposure, sensitization, film removal and the like are required twice; because the continuous treatment process is less, the product qualification rate is low, and the cost is high due to the loss of product materials.
Patent documents 1 to 3 provide methods for producing various lead frames and plated products of printed wiring boards by etching using a copper-clad laminate and a metal plate as raw materials, and are an important foundation for the production and processing industry of semiconductor devices.
However, the processing of plated products of semiconductor devices is a complicated series of processes for surface-treating lead frames or printed wiring metal plates. Degreasing, washing, pickling, washing, drying, hot-pressing with a photosensitive film, developing, performing surface treatment of various processes on the exposed metal surface after development, drying, removing the exposed photosensitive film, and etching the exposed metal to obtain the electroplated product of the semiconductor device. The method is a crucial technical process for carrying out hot-pressing treatment, exposure, development and removal of the photosensitive film for the metal surface, and a plurality of problems in industrial production are not solved at present; for example, if the hot-pressing treatment of the photosensitive film on the metal surface does not meet the specification requirements of products with strong bonding force and uniform distribution, the subsequent processes such as electroplating and the like are directly affected, so that products meeting the specification requirements cannot be produced; in addition, if the photosensitive film residue is left on the metal surface in the process of removing the exposed photosensitive film, the product quality is affected, the production efficiency is reduced, and the production cost is increased.
In the industrial production of semiconductor devices, the production technical problems in documents 1 to 3 are urgently needed to be solved as soon as possible.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art.
Therefore, the invention provides a surface treatment method of a semiconductor device, which not only can ensure that the bonding force between a photosensitive film and the surface of electroplated metal is strong and uniformly distributed, but also can realize continuous processing production, and the obtained electroplated product has stable quality and high product qualification rate.
The surface treatment method of the semiconductor device according to the embodiment of the invention comprises the following steps: s1, preprocessing the first metal base material to obtain a first metal base material with a clean surface; s2, electrolytically precipitating a first plating layer on at least a part of the outer surface of the first metal substrate with a clean surface; s3, carrying out micro-etching treatment on the first plating layer to increase the surface roughness of the first plating layer; s4, arranging a photosensitive film on the first plating layer processed in the step S3, and exposing and developing the photosensitive film, wherein the photosensitive film corresponding to one of the non-exposure area and the exposure area is dissolved to expose the metal surface, and the photosensitive film corresponding to the other of the non-exposure area and the exposure area cannot be dissolved; s5, carrying out electroplating treatment on the region where the first plating layer is exposed to form a second plating layer; s6, removing the photosensitive film corresponding to the non-exposure area and the other exposure area; and S7, etching at least one part of the first metal base material and the first plating layer of the product obtained in the step S6, wherein at least one part of the first metal base material and the first plating layer comprises an area where the outer surface of the first metal base material and the first plating layer are arranged in a staggered mode.
According to the surface treatment method of the semiconductor device, the first coating is electrolytically precipitated on at least one part of the outer surface of the first metal substrate with a clean surface, and the surface roughness of the first coating is increased, so that the bonding force between the photosensitive film and the electroplated metal surface is strong and uniform in distribution, and the product quality can be improved.
According to one embodiment of the present invention, step S1 includes at least one of ultrasonic degreasing, electrolytic degreasing, acidifying, and water washing the first metal substrate.
According to an embodiment of the present invention, in step S3, the solvent is a mixture of formic acid and sodium formate.
According to an embodiment of the present invention, the photosensitive film is provided to the first plating layer by a hot press method in step S4.
According to an embodiment of the present invention, in step S5, the second plating layer is one or more layers.
According to one embodiment of the invention, the first metal substrate is copper or a copper alloy, the first plating layer is a copper first plating layer, and the second plating layer comprises a metal second plating layer and/or a metal alloy second plating layer.
According to an embodiment of the present invention, the metal second plating layer is metal nickel, metal palladium, metal silver, metal gold, metal tin, metal iridium, metal platinum or metal ruthenium, and the metal alloy second plating layer is nickel palladium, nickel phosphorus, nickel tungsten, gold nickel, gold cobalt, gold tin, gold silver or rhodium ruthenium.
According to one embodiment of the present invention, the first metal base material is a continuous strip material, and the first metal base material is continuously movable in the axial direction thereof in at least one of the steps S1 to S7.
According to an embodiment of the present invention, the first metal base material is provided with the first plating layer and the second plating layer in this order from inside to outside on one side in the length direction thereof through steps S1 to S5, and the method further includes the steps of: cutting the product obtained in step S5 at a set distance along the length direction of the first metal base material; connecting one end of the second plating layer, which is back to the position of the first plating layer, with a circuit board, wherein at least one part of one side of the circuit board, which is back to the position of the first plating layer, is provided with a second metal substrate; repeating the steps S1 to S5 on the second metal substrate corresponding to the circuit board for processing; and repeating the step S6 and the step S7, wherein the first metal base material and the first plating layer corresponding to the first metal base material in the step S7 are all etched, and a circuit board product with the second plating layers arranged on two sides is obtained.
According to one embodiment of the invention, one side of the circuit board is provided with a resin layer, and the resin layer and one end of the second plating layer, which is back to the position of the first plating layer, are integrated through hot pressing.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a flowchart of a surface treatment method of a semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a first metal base material of the surface treatment method of the semiconductor device according to embodiment 1 of the present invention;
fig. 3 is a schematic view of providing a photosensitive film in step S4 of the surface treatment method of a semiconductor device according to embodiment 1 of the present invention;
fig. 4 is a schematic view of step S4 of the surface treatment method of a semiconductor device according to embodiment 1 of the present invention;
fig. 5 is a schematic view of steps S5, S6 of the surface treatment method of the semiconductor device according to embodiment 1 of the present invention;
fig. 6 is a schematic view of step S7 of the surface treatment method of a semiconductor device according to embodiment 1 of the present invention;
fig. 7 is a schematic view of steps S5, S6 of the surface treatment method of the semiconductor device according to embodiment 2 of the present invention;
fig. 8 is a schematic view of step S7 of the surface treatment method of a semiconductor device according to embodiment 2 of the present invention.
Fig. 9 is a schematic view of a transfer of the first plating layer of the surface treatment method of the semiconductor device according to embodiment 3 of the present invention;
fig. 10 is a schematic view showing the assembly of a second metal base material and a wiring board in the surface treatment method of a semiconductor device according to embodiment 3 of the present invention;
fig. 11 is a schematic structural view of a product obtained by secondarily hot-pressing the photosensitive film in the surface treatment method of the semiconductor device according to embodiment 3 of the present invention;
fig. 12 is a schematic view of a structure of a product obtained after secondary development in the surface treatment method for a semiconductor device according to embodiment 3 of the present invention;
fig. 13 is a schematic view showing the assembly of the second plating layer in the surface treatment method of the semiconductor device according to embodiment 3 of the present invention;
fig. 14 is a schematic view of the structure of the photosensitive film at the exposed region removed in the surface treatment method of the semiconductor device according to embodiment 3 of the present invention;
fig. 15 is a schematic view of a structure of a product obtained through an etching process in the surface treatment method for a semiconductor device according to embodiment 3 of the present invention.
Reference numerals:
a first metal substrate 210; a first plating layer 211; a photosensitive film 212;
an intermediate product 220;
an intermediate product 230; the second plating layer 231;
a wiring board 300;
a second metal substrate 400.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention. Furthermore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
A surface treatment method of a semiconductor device according to an embodiment of the present invention is specifically described below with reference to the drawings.
As shown in fig. 1, a surface treatment method of a semiconductor device according to an embodiment of the present invention includes the steps of: and S1, preprocessing the first metal base material to obtain the first metal base material with a clean surface. The pretreatment can remove stains such as metal oxides, grease and the like on the surface of the first metal substrate, and provides a clean metal surface material for the electroplating process.
Optionally, the first metal substrate is a rolled strip or a sheet metal, and the first metal substrate may be copper, stainless steel, or the like.
According to one embodiment of the present invention, step S1 includes at least one of ultrasonic degreasing, electrolytic degreasing, acidifying, and water washing the first metal substrate. Optionally, the first metal substrate is subjected to ultrasonic degreasing, water washing, electrolytic degreasing and sufficient water washing in this order.
S2, electrolytically depositing a first plating layer on at least a part of the outer surface of the first metal substrate with a clean surface, where the first plating layer may be copper, nickel, etc., and the first plating layer is uniformly distributed on the outer surface of the first metal substrate, and optionally, the first substrate obtained in step S1 is sequentially subjected to the following steps: washing and supplying power, copper sulfate 1, washing and supplying power, copper sulfate 2, washing and supplying power, copper sulfate 3, washing and supplying power, copper sulfate 4, washing and supplying power and fully washing to obtain a copper-plated product.
And S3, microetching the first plating layer to increase the surface roughness of the first plating layer, wherein the surface of the first plating layer has a micro rough structure, so that the first plating layer can be effectively combined with the photosensitive film in the subsequent step.
In some embodiments of the present invention, in step S3, the solvent is a mixture of formic acid and sodium formate solution, so as to obtain a micro-rough surface structure. After the solvent treatment is finished, the water can be washed and dried by pure water.
S4, disposing a photosensitive film on the first plating layer processed in the step S3, and exposing and developing the photosensitive film, wherein the photosensitive film corresponding to one of the non-exposure region and the exposure region is dissolved to expose the metal surface, and the photosensitive film corresponding to the other of the non-exposure region and the exposure region is not dissolved. The photosensitive film and the first coating have good binding property and uniform distribution, so that when exposure processing is carried out by continuous exposure equipment, high exposure precision can be effectively ensured, the boundary between an exposure area and a non-exposure area is very clear, and the product quality is stable.
Optionally, the development treatment may be performed on the photosensitive film and the metal hot-pressing material (first plating layer) after the exposure apparatus treatment, the photosensitive film in the non-exposure region is dissolved by the developer, the photosensitive film in the exposure region cannot be dissolved, the obtained metal material not only has a clear pattern in the region where the metal copper plating surface is exposed, but also has a uniform and neat concave region exposed after the photosensitive film is dissolved.
Optionally, in step S4, the photosensitive film is disposed on the first plating layer by a hot pressing method, and since the surface of the first plating layer has a micro-roughness structure, after the hot pressing process, the bonding force between the photosensitive film and the first plating layer is strong and uniformly distributed.
And S5, performing electroplating treatment on the area where the first plating layer is exposed to form a second plating layer, optionally, when the first plating layer is copper, performing surface treatment on the area where the metal material copper is exposed by an electroplating process, wherein the exposed photosensitive film area is tightly combined with the first plating layer, and the pattern lines of the area where the metal material copper is exposed are clear, so that the obtained second plating layer is not only regular in shape, but also uniform in film thickness distribution.
According to one embodiment of the present invention, the amount of the second plating layer in step S5 is one or more layers.
And S6, removing the photosensitive film corresponding to the non-exposure area and the exposure area, wherein the effective flowing performance of the processing solution can be improved in the process of removing the exposed photosensitive film, and the effective components of the processing solution are supplemented at regular time to ensure that the stripping capability of removing the exposed photosensitive film is maintained unchanged and the obtained metal surface has no photosensitive film residue.
And S7, etching at least one part of the first metal base material and the first plating layer of the product obtained in the step S6, wherein at least one part of the first metal base material and the first plating layer comprises a region where the outer surface of the first metal base material and the first plating layer are arranged in a staggered mode. Alternatively, when the first plating layer is copper, the etching process may use an etching solution to treat the copper surface region, and after the copper plating layer (first plating layer) and the metal copper material (first metal base material) are dissolved away, the obtained semiconductor device has high product shape precision, and the film thickness distribution of each plating layer is very uniform.
It should be noted that the method according to the embodiment of the present invention can not only perform single-sided processing on the circuit board 300, but also implement double-sided processing, where the structures corresponding to the double sides may be the same or different, and are specifically designed according to the requirements.
In some embodiments of the present invention, the first metal substrate is copper or a copper alloy, such as brass or red copper, and the first metal substrate may be various copper foils, the first plating layer is a copper first plating layer, and the second plating layer includes a metal second plating layer and/or a metal alloy second plating layer.
Further, the metal second plating layer is metal nickel, metal palladium, metal silver, metal gold, metal tin, metal iridium, metal platinum or metal ruthenium, and the like, and the metal alloy second plating layer is nickel palladium, nickel phosphorus, nickel tungsten, gold nickel, gold cobalt, gold tin, gold silver, rhodium ruthenium, and the like.
In some embodiments of the present invention, the first metal base material is a continuous strip material, and the first metal base material is capable of continuously moving along the axial direction thereof in at least one of the steps S1 to S7, wherein the exposure apparatus can continuously and automatically perform a take-up and pay-off process, and can expose the product with high precision. The continuous and feasible production process is adopted, the continuous processing of developing, electroplating, exposure photosensitive film removing, etching, drying and the like can be continuously carried out on the same production line, the production conditions are continuous and stable, the surface treatment of the semiconductor device is uniform and neat, the obtained electroplated product has stable quality, high product qualification rate and high production efficiency.
Optionally, in step S2, the first metal substrate is operated in a horizontal continuous surface treatment manner, an electrolytic solution tank is arranged below the first metal substrate operation channel, a copper electroplating solution can be contained in the electrolytic solution tank, the surface of the first metal substrate to be electroplated is arranged in parallel and opposite to the surface of the electroplating solution in the solution tank, and when the surface treatment is required, the liquid level of the electroplating solution is raised to immerse the surface of the first metal substrate to be electroplated into the electroplating solution for electroplating.
According to one embodiment of the invention, the exposed product is continuously subjected to developing, electroplating, photosensitive film removing and etching processes in the same production line, and the processing steps comprise: development → sufficient water washing → water washing and power supply → plating Ni1 → power supply and water washing → plating Ni2 → power supply and water washing → plating Ni3 → power supply and water washing → plating Ni4 → power supply and water washing → plating Ni5 → power supply and water washing → plating Ni6 → power supply and water washing → plating Ni7 power supply and water washing → plating Ni8 → power supply and water washing → plating Ni9 → power supply and water washing → sufficient water washing → power supply and water washing → plating palladium 1 → power supply and water washing → plating palladium 2 → power supply and water washing → sufficient water washing → power supply and water washing → plating gold → water washing and power supply → sufficient water washing → etching → sufficient water washing → drying → rolling of semiconductor device product → product storage. Through the continuous treatment of the assembly line, the product quality is very stable, and the production efficiency is greatly improved.
Optionally, the first metal substrate obtained through steps S1 to S5 is provided with a first plating layer and a second plating layer in this order from inside to outside along one side of the first metal substrate in the length direction, and the method further includes the steps of:
the product obtained in step S5 is cut at a set distance along the longitudinal direction of the first metal base material.
And connecting one end of the second plating layer, which faces away from the first plating layer, with the circuit board, wherein at least one part of one side of the circuit board, which faces away from the first plating layer, is provided with a second metal substrate. That is, a second plating layer is disposed on one side of the circuit board, and a second metal substrate is disposed on the other side of the circuit board.
And repeating the steps S1 to S5 on the second metal base material corresponding to the circuit board to process, namely obtaining another second plating layer on the second metal base material.
Repeating the step S6 and the step S7, wherein in the step S7, the first metal base material and the corresponding first plating layer are all etched to obtain a circuit board product with second plating layers on both sides, where it is to be noted that the structures of the second plating layers on both sides of the circuit board may be the same or different, and may be specifically designed according to the requirements.
That is, the reel material of the semiconductor device obtained by the above-mentioned continuous surface treatment method is cut into a sheet shape according to the product specification of the semiconductor device by a continuous cutter, and used as a raw material for producing and processing a multilayer semiconductor device, and a double-sided semiconductor device plated product of a special function obtained by further processing can provide a high-precision plated product of a semiconductor device having a special function for a front-end high-precision electronic device.
Furthermore, one side of the circuit board is provided with a resin layer, and the resin layer and one end of the second plating layer, which faces away from the first plating layer, are hot-pressed into a whole. Alternatively, the sheet-like semiconductor device is pressed through a resin plate for protecting a metal circuit, and a copper thin plate (second plating layer) is pressed into the surface thereof to obtain a double-sided base plate material of the semiconductor device.
According to one embodiment of the present invention, a double-sided raw sheet material of a semiconductor device is processed by the following process: double-sided original plate material → ultrasonic degreasing → electrolytic degreasing → sufficient washing → acidification → sufficient washing → washing and power supply → copper sulfate 1 → washing and power supply → copper sulfate 2 → washing and power supply → copper sulfate 3 → washing and power supply → sufficient washing to obtain copper plated product → sodium formate and formic acid treatment → sufficient washing → drying → hot-pressing photosensitive film → intermediate product, namely the material of the hot-pressing photosensitive film on the surface of the thin copper plate. Through the continuous process, the product quality is stable, the production efficiency is high, and excellent electroplated products of semiconductor devices with special functions can be provided for front-end high-precision electronic equipment.
According to one embodiment of the invention, the material of the hot-pressed photosensitive film on the surface of the thin copper plate (the second plating layer) is subjected to exposure treatment by a continuous exposure device, and the photosensitive film and the metal are uniformly and firmly combined through hot pressing, so that the high precision of exposure is ensured, the boundary between an exposure area and a non-exposure area is very clear, and the product quality is stable.
In some embodiments of the present invention, the material of the thermally pressed photosensitive film on the surface of the exposed thin copper plate is processed by developing → sufficient washing → washing and power supply → plating → washing and power supply → sufficient washing → sealing process → sufficient washing → photosensitive film for removing exposure → sufficient washing → etching 1 → washing → etching 2 → washing → etching 3 → washing → etching 4 → washing → etching 5 → washing → etching 6 → sufficient washing → drying → obtaining a semiconductor device product with special functions of the front and back side wiring board.
It should be noted that, in the prior art, the technical scheme of grinding the PCB and strictly controlling grinding marks is adopted, so that the adhesion force on the surface of the PCB is ensured, and the photosensitive film and the PCB can be tightly attached to each other is ensured. Moreover, the PCB grinding needs a plate grinding machine and strictly controls the process, so that the production management difficulty is high; the surface treatment method of the semiconductor device of the embodiment of the invention adopts a solution system treatment process, is easy to operate and can ensure that continuous production is stably carried out. In addition, the steps S1 to S7 in the embodiment of the present invention have the advantages of stable continuous processing technology, high yield, and the like, while the prior art grinding method has the disadvantages of poor stability and low yield.
The surface treatment method of the semiconductor device according to the embodiment of the present invention will be specifically described below with reference to specific embodiments.
Example 1
As shown in fig. 2, the raw material 1 (first metal base material) is a copper alloy rolled strip having a width of 210 mm.
The electroplating specification is as follows: the thickness of the integral copper plating film of the copper alloy roll-type strip is 0.5-1.5 mu m; the thickness of the nickel plating film in the local area of the copper alloy rolled strip is 1.5-3.5 mu m; the thickness of the silver plating film of the partial area of the copper alloy roll-type strip is 4.5-5.5 mu m; the whole body of the electroplated copper alloy rolled strip is treated by a silver protective agent.
Pretreatment: starting the electroplating equipment, and performing ultrasonic degreasing → electrolytic degreasing → sufficient water washing → acidification → sufficient water washing on the copper alloy rolled strip material at the speed of 3m/min in a horizontal mode, wherein the stains such as metal oxides, grease and the like on the surface of the first metal base material can be removed completely through the pretreatment step, so that the copper alloy rolled strip material 210 with a clean surface is obtained.
As shown in fig. 3, copper plating: the copper alloy rolled strip with clean surface enters a copper plating tank and copper sulfate is used for electroplatingThe temperature of the plating solution was 25 ℃ and the current density was 3A/dm2At a speed of 2m/min, the following steps are carried out: the process comprises the steps of supplying power and washing → copper sulfate 1 → supplying power and washing → copper sulfate 2 → supplying power and washing power → copper sulfate 3 → supplying power and washing → fully washing to obtain a copper-plated product (a first metal substrate with a first coating), continuously treating with formic acid and a sodium formate solution to obtain a micro-rough copper-plated product (increasing the surface roughness of the first coating), and carrying out the process of copper product → treatment of sodium formate and formic acid → fully washing → drying → hot-pressing of a photosensitive film → storage of the product for the next process.
Exposure: after a product pattern mold to be produced is arranged in exposure equipment, starting the power supply of the exposure equipment, setting exposure time according to the complexity of a product pattern, exposing the product, continuously carrying out the same treatment under the same exposure condition, and carrying out continuous production in the continuous operation mode; and packaging the product by using a protective film after exposure, and rolling the product in a disc for storage.
Subsequently, the exposed product was continuously processed at 2m/min on an apparatus for developing, plating, removing a photosensitive film, and etching processes.
Specifically, the development process yields an intermediate product 220 from which the photosensitive film in the non-exposed region is removed, as shown in fig. 4.
The electroplating process comprises the following steps:
the intermediate product 220 after development → sufficient washing → acidification → washing and conduction → electrosilvering 1 → washing and conduction → electrosilvering 2 → washing and power supply → electrosilvering 3 → washing and power supply → electrosilvering 4 → washing and conduction → electrosilvering 5 → washing and conduction → electrosilvering 6 → washing and conduction → electrosilvering 7 → washing and conduction → electrosilvering 8 → washing and conduction → sufficient washing → protection of silver plating → sufficient washing → drying → to obtain the electroplated product of the lead frame.
The process for removing the exposed photosensitive film comprises the following steps:
the obtained lead frame plated product is continuously processed on a continuous device at the speed of 2 m/min: electroplating the product → removing the exposed photosensitive film → washing with water sufficiently to obtain the product 230 with the exposed photosensitive film removed, as shown in fig. 5.
The etching process comprises the following steps:
the product 230 after removing the exposed photosensitive film was continuously processed at a speed of 2m/min on a continuous apparatus: sufficient water washing → etching 1 → sufficient water washing → etching 2 → sufficient water washing → etching 3 → sufficient water washing → etching 4 → sufficient water washing → etching 5 → sufficient water washing → etching 6 → sufficient water washing → drying, to obtain the lead frame plated product, as shown in fig. 6.
Example 2
The raw material 2 (first metal substrate) was a copper alloy rolled strip having a width of 170 mm.
The electroplating specification is as follows: the thickness of the integral copper plating film of the copper alloy roll-type strip is 0.5-1.5 mu m; the thickness of the nickel plating film in the local area of the copper alloy rolled strip is 1.5-3.5 mu m; the thickness of the palladium plating film in the local area of the copper alloy roll-type strip is 0.3-0.5 mu m; the local area gold-plating film thickness of the copper alloy roll-type strip is 0.06-0.1 mu m; and treating the whole electroplated copper alloy rolled strip with a hole sealing agent.
Pretreatment and copper plating: the same as in example 1.
Exposure and development: in the same manner as in example 1, the intermediate product after exposure was subjected to surface treatment at a rate of 2m/min on a developing, plating, photosensitive film removing and etching apparatus.
The electroplating process comprises the following steps:
the developed intermediate product 220 → sufficient washing → acidification → power supply and washing → electroplated Ni1 → power supply and washing → electroplated Ni2 → power supply and washing → electroplated Ni3 → power supply and washing → electroplated Ni4 → power supply and washing → electroplated Ni5 → power supply and washing → electroplated Ni6 → power supply and washing → electroplated Ni7 → power supply and washing → electroplated Ni8 → power supply and washing → electroplated Ni9 → power supply and washing → sufficient washing → power supply and washing → electroplated palladium 1 → power supply and washing → electroplated palladium 2 → power supply and washing → sufficient washing → power supply and washing → electroplated gold → power supply and washing → sufficient washing → hole sealing processing → sufficient → baking to obtain a lead frame electroplated product as shown in fig. 7.
The process for removing the exposed photosensitive film comprises the following steps:
and (3) continuously processing the obtained lead frame electroplating product on continuous equipment at the speed of 2 m/min: electroplating product → removing the exposed photosensitive film → washing with water.
Etching: the structure of the product obtained in the same manner as in example 1 is shown in FIG. 8.
Example 3
The raw material 3 (first metal substrate) is a copper alloy rolled strip having a width of 300 mm. And after the single side is electroplated with silver, cutting the continuous strip into a sheet material according to the product specification.
The electroplating specification is as follows: the thickness of the integral copper plating film of the copper alloy roll-type strip is 0.5-1.5 mu m; the thickness of the silver plating film of the partial area of the copper alloy roll-type strip is 7.5-9.5 mu m; the whole body of the electroplated copper alloy rolled strip is treated by a silver protective agent. And cut into slices according to the product specification for storage.
Using a sheet product as a raw material, and adopting the following electroplating specifications on the other side of silver plating: the thickness of the nickel plating film is 1.5-3.5 μm; the thickness of the palladium plating film is 0.3-0.5 μm; the thickness of the gold-plating film is 0.06-0.1 μm; and treating the whole electroplated copper alloy rolled strip with a hole sealing agent.
Pretreatment: starting the electroplating equipment, and enabling the copper alloy roll-type strip (first metal base material) to pass through ultrasonic degreasing → electrolytic degreasing → sufficient water washing → acidification → sufficient water washing at a speed of 1m/min in a horizontal mode; the stains such as metal oxides, grease and the like on the surface of the metal material can be removed completely through the pretreatment, and the copper alloy rolled strip with a clean surface is obtained.
Copper plating: the copper alloy rolled strip with clean surface enters a copper plating tank, the temperature of copper sulfate electroplating solution is 25 ℃, and the current density is 3A/dm2At a speed of 1m/min, the following steps are carried out: power supply and water washing → copper sulfate 1 → power supply and water washing → copper sulfate 2 → power supply and water washing → copper sulfate 3 → power supply and water washing → full water washing to obtain a copper plated product; and continuously treating the copper product by using formic acid and a sodium formate solution to obtain a micro-rough copper product, wherein the process comprises the steps of treating the copper product → sodium formate and formic acid → fully washing the copper product → drying the copper product → hot-pressing a photosensitive film → storing the copper product for later working procedures.
Exposure: after a product pattern mold to be produced is arranged in exposure equipment, starting the power supply of the exposure equipment, setting exposure time according to the complexity of a product pattern, exposing the product, continuously carrying out the same treatment under the same exposure condition, and carrying out continuous production in the continuous operation mode; and packaging the product by using a protective film after exposure, and rolling the product in a disc for storage.
Subsequently, the exposed product was continuously processed at 2m/min on an apparatus for developing, plating, removing a photosensitive film, and etching processes.
Specifically, the intermediate product 220 from which the photosensitive film of the non-exposed region is removed is obtained through a developing process.
Specifically, the electroplating process comprises the following steps:
development → sufficient water washing → acidification → sufficient water washing → power supply and water washing → electro-silver plating 1 → power supply and water washing → electro-silver plating 2 → power supply and water washing → electro-silver plating 3 → power supply and water washing → electro-silver plating 4 → power supply and water washing → electro-silver plating 5 → power supply and water washing → electro-silver plating 6 → power supply and water washing → electro-silver plating 7 → power supply and water washing → electro-silver plating 8 → power supply and water washing → sufficient water washing → silver plating protection → sufficient water washing → drying, to obtain a lead frame plated product, as shown in fig. 9.
Material cutting and hot pressing:
the silver-plated continuous material was cut into a sheet-like material by a cutter in accordance with the product specification, and the silver-plated surface was heat-pressed with the resin surface of a dedicated circuit board 300 (having a thickness of 3mm and a single surface with a 30 μm copper foil (second metal base material 400)) to obtain a circuit board material.
Pretreatment: starting electroplating equipment, and enabling the sheet-shaped circuit board to pass through ultrasonic degreasing → electrolytic degreasing → full water washing → acidification → full water washing at a speed of 1m/min in a horizontal mode; this pretreatment makes it possible to remove stains such as metal oxides and grease from the surface of the copper foil (second metal base material 400) and to obtain a surface-cleaned copper wiring board material, as shown in fig. 10.
Copper plating: the copper circuit board with clean surface enters a copper plating tank, the temperature of copper sulfate electroplating solution is 25 ℃, the current density is 3A/dm2, and the speed is 1m/min, and the following steps are carried out: power supply and water washing → copper sulfate 1 → power supply and water washing → copper sulfate 2 → water washing and power supply → copper sulfate 3 → power supply and water washing → copper sulfate 4 → power supply and water washing → full water washing to obtain a copper plated product; the copper product is treated with formic acid and sodium formate solution to obtain micro-rough copper product, and the process is copper product → sodium formate and formic acid treatment → full water washing → drying → hot pressing of photosensitive film → product storage for the next working procedure, as shown in fig. 11.
Exposure: after a product pattern mold to be produced is arranged in exposure equipment, starting the power supply of the exposure equipment, setting exposure time according to the complexity of a product pattern, exposing the product, continuously carrying out the same treatment under the same exposure condition, and carrying out continuous production in the continuous operation mode; and packaging and keeping the product by using a protective film after exposure for later use.
Subsequently, the exposed product was processed at a speed of 1m/min on a developing, plating, photosensitive film removing and etching apparatus, and the photosensitive film in the unexposed area was dissolved away to obtain a circuit board plated product, as shown in fig. 12.
Specifically, the electroplating process comprises the following steps:
the developed intermediate product → sufficient water washing → acidification → power supply and water washing → electroplated Ni1 → power supply and water washing → electroplated Ni2 → power supply and water washing → electroplated Ni3 → power supply and water washing → electroplated Ni4 → power supply and water washing → electroplated Ni5 → power supply and water washing → electroplated Ni6 → power supply and water washing → electroplated Ni7 → power supply and water washing → electroplated Ni8 → power supply and water washing → electroplated Ni9 → power supply and water washing → sufficient water washing → power supply and water washing → electroplated palladium 1 → power supply and water washing → sufficient water washing → drying to obtain an electroplated circuit board product.
The process for removing the exposed photosensitive film comprises the following steps:
after obtaining the circuit board electroplating product, continuously removing the exposure photosensitive film on continuous equipment at the speed of 1 m/min: electroplating product → removing the exposed photosensitive film → washing with water.
Etching: the product from which the exposed photosensitive film was removed was continuously processed at a speed of 1m/min on a continuous apparatus: sufficient water washing → etching 1 → sufficient water washing → etching 2 → sufficient water washing → etching 3 → sufficient water washing → etching 4 → sufficient water washing → etching 5 → sufficient water washing → etching 6 → sufficient water washing → drying, to obtain the circuit board plated product, as shown in fig. 14.
In summary, the surface treatment method of the semiconductor device according to the embodiment of the present invention has at least the following advantages:
(1) the semiconductor device can be continuously and continuously produced and subjected to surface treatment;
(2) the production conditions can be precisely controlled, so that the pretreatment efficiency of the first metal base material is high;
(3) the film thickness of the first coating is uniformly distributed, and the binding force between the photosensitive film and the surface of the first coating is strong and uniformly distributed;
(4) the exposure equipment can continuously and automatically receive and discharge materials for production, and can expose products with high precision;
(5) the continuous processing of developing, electroplating, removing an exposure photosensitive film, etching, drying and the like can be continuously carried out on the same production line, the production condition is continuous and stable, the surface treatment of the semiconductor device is uniform and regular, the quality of the obtained electroplating product is stable, and the product qualification rate is high;
(6) in the process of removing the exposure photosensitive film, the effective flowing property of the treatment solution is improved, and the effective components of the treatment solution are added at regular time to ensure that the stripping capability of removing the exposure photosensitive film is kept unchanged and the obtained metal surface has no photosensitive film residue;
(7) because the binding force between the photosensitive film and the electroplated metal surface is strong and evenly distributed, the phenomenon of plating leakage does not occur in the area where the exposed photosensitive film is removed;
(8) the metal surface of the obtained product can be cleaned and uniform, and the shape of the product is clear and tidy by the comprehensive excellent performance of multiple processes of exposure, development, electroplating and removal of the exposure photosensitive film.
The surface treatment method of the semiconductor device has the characteristics of continuous and feasible production process, good product quality stability, high product qualification rate and the like, and can provide high-quality electroplating products of lead frames and printed circuit boards for the semiconductor device manufacturing industry.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (7)
1. A surface treatment method of a semiconductor device, characterized by comprising the steps of:
s1, preprocessing the first metal base material to obtain a first metal base material with a clean surface;
s2, electrolytically precipitating a first plating layer on at least a part of the outer surface of the first metal substrate with a clean surface;
s3, carrying out micro-etching treatment on the first plating layer to increase the surface roughness of the first plating layer;
s4, arranging a photosensitive film on the first plating layer processed in the step S3, and exposing and developing the photosensitive film, wherein the photosensitive film corresponding to one of the non-exposure area and the exposure area is dissolved to expose the metal surface, and the photosensitive film corresponding to the other of the non-exposure area and the exposure area cannot be dissolved;
s5, carrying out electroplating treatment on the region where the first plating layer is exposed to form a second plating layer;
s6, removing the photosensitive film corresponding to the non-exposure area and the other exposure area;
s7, etching at least one part of the first metal base material and the first plating layer of the product obtained in the step S6, wherein at least one part of the first metal base material and the first plating layer comprises an area where the outer surface of the first metal base material and the second plating layer are arranged in a staggered mode;
the first metal base material is a continuous strip material, and the first metal base material can continuously move along the axial direction of the first metal base material in at least one of the steps S1 to S7;
the method of obtaining the first metal base material having the first plating layer and the second plating layer sequentially provided from the inside to the outside along one side of the length direction thereof through steps S1 to S5, further comprising the steps of:
cutting the product obtained in step S5 at a set distance along the length direction of the first metal base material;
connecting one end of the second plating layer, which is back to the position of the first plating layer, with a circuit board, wherein at least one part of one side of the circuit board, which is back to the position of the first plating layer, is provided with a second metal substrate;
repeating the steps S1 to S5 on the second metal substrate corresponding to the circuit board for processing;
and executing the step S6 and the step S7, wherein the first metal base material and the first plating layer corresponding to the first metal base material in the step S7 are all etched, and obtaining the circuit board product with the second plating layers arranged on two sides.
2. The surface treatment method for a semiconductor device according to claim 1, wherein the step S1 comprises at least one of ultrasonic degreasing treatment, electrolytic degreasing, acidification and water washing of the first metal substrate.
3. The method for processing the surface of a semiconductor device as claimed in claim 1, wherein in step S3, the solvent is a mixture of formic acid and sodium formate solution.
4. The surface treatment method of a semiconductor device according to claim 1, wherein in step S4, the photosensitive film is provided on the first plating layer by a hot press method.
5. The surface treatment method for a semiconductor device according to claim 1, wherein in step S5, the amount of the second plating layer is one or more layers.
6. The surface treatment method for a semiconductor device according to claim 1, wherein the first metal substrate is copper or a copper alloy, the first plating layer is a copper first plating layer, and the second plating layer comprises a metal second plating layer and/or a metal alloy second plating layer.
7. The surface treatment method for the semiconductor device according to claim 6, wherein the metal second plating layer is metal nickel, metal palladium, metal silver, metal gold, metal tin, metal iridium, metal platinum or metal ruthenium, and the metal alloy second plating layer is nickel palladium, nickel phosphorus, nickel tungsten, gold nickel, gold cobalt, gold tin, gold silver or rhodium ruthenium.
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