CN111363551B - Etching liquid and etching process for etching ultrahigh-power light-resistant glass chip - Google Patents
Etching liquid and etching process for etching ultrahigh-power light-resistant glass chip Download PDFInfo
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- CN111363551B CN111363551B CN202010196777.5A CN202010196777A CN111363551B CN 111363551 B CN111363551 B CN 111363551B CN 202010196777 A CN202010196777 A CN 202010196777A CN 111363551 B CN111363551 B CN 111363551B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Abstract
The invention belongs to the technical field of glass chip etching, and particularly relates to an etching solution for etching an ultra-high-power light resistance glass chip and an etching process, wherein the etching solution comprises a coarse etching solution and a fine etching solution, and the coarse etching solution is prepared from the following components in percentage by volume: 30-50 parts of 38-42% hydrofluoric acid, 30-40 parts of 65-70% nitric acid, 5-10 parts of 99.9% glacial acetic acid, 5-15 parts of 96-98% sulfuric acid and 1-5 parts of saturated fluorine salt solution; the fine corrosive liquid is prepared from the following components in percentage by volume: 25-30 parts of 38-42% hydrofluoric acid, 25-30 parts of 65-70% nitric acid, 30-40 parts of 99.9% glacial acetic acid and 10-15 parts of 96-98% sulfuric acid; wherein the corrosion temperature in the crude corrosion solution is 10-30 ℃; the corrosion temperature in the fine corrosion solution is-10 ℃ to-4 ℃. The etching solution comprises a coarse etching solution and a fine etching solution, and is matched with etching solutions with different etching rates, so that the ditching speed is high, the ditching depth error is small, and the chip quality is improved.
Description
Technical Field
The invention belongs to the technical field of glass chip etching, and particularly relates to a corrosive liquid and a corrosion process for etching an ultra-high-power light resistance glass chip.
Background
GPP (glass passivation) chips are used as indispensable devices in power electronic equipment, and at present, glass passivation is carried out by three methods, namely a knife scraping method, an electrophoresis method and a light resistance method, wherein the reliability of the light resistance method glass passivation chip is higher than that of the knife scraping method and the electrophoresis method, and the light resistance method glass passivation chip gradually replaces the current knife scraping method chip.
In the process of manufacturing the glass passivation technology by the light resistance method, chemical corrosion is a more critical process, a photoetched monocrystalline silicon substrate is put into low-temperature mixed acid, the part which is not protected by photoresist is corroded by a chemical reaction mode, after the reaction is carried out for a certain time, the corrosion depth exceeds the junction depth of a boron surface, and at the moment, core particles have basic electrical property. The corrosion condition of the groove in the light resistance method is closely connected with the quality of the light resistance glass chip; the groove is too narrow, and in secondary exposure, the width of the passivated glass at the edge of the core particle is not enough, so that the glass passivation layer is damaged and the protective effect cannot be achieved; the groove is too wide, the table surface of the core particle becomes small, and parameters such as VF and forward surge can not meet the requirements; the grooves are too deep, so that the chips are easily damaged in the circulation process, and the loss is obviously increased; the trenches are too shallow for conventional electrical performance to be desired, which may result in scrap. Therefore, the etching solution with good performance and easy adjustment has great influence on the production of the photoresist glass chip.
Chinese patent CN201811441811X discloses an etching solution, wherein 45-60 parts of nitric acid with a molar concentration of 65-70%, 10-40 parts of hydrofluoric acid with a molar concentration of 38-42%, 8-15 parts of sulfuric acid with a molar concentration of 96-98% and 35-40 parts of glacial acetic acid with a molar concentration of 99.9% are uniformly mixed to obtain the etching solution, the etching solution has a high glass etching rate, and the etching precision is difficult to control.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the defects, the invention provides the etching solution and the etching process for etching the ultra-high-power light resistance glass chip, wherein the etching solution comprises a coarse etching solution and a fine etching solution, and the etching solutions with different etching rates are matched, so that the ditching speed is high, the ditching depth error is small, and the chip quality is improved.
The technical scheme adopted by the invention for solving the technical problems is as follows: the etching solution for etching the ultra-high power light resistance glass chip is characterized in that: the corrosion-resistant material comprises a crude corrosion solution and a fine corrosion solution, wherein the crude corrosion solution is prepared from the following components in percentage by volume: 30-50 parts of 38-42% hydrofluoric acid, 30-40 parts of 65-70% nitric acid, 5-10 parts of 99.9% glacial acetic acid, 5-15 parts of 96-98% sulfuric acid and 1-5 parts of saturated fluorine salt solution;
the fine corrosive liquid is prepared from the following components in percentage by volume: 25-30 parts of 38-42% hydrofluoric acid, 25-30 parts of 65-70% nitric acid, 30-40 parts of 99.9% glacial acetic acid and 10-15 parts of 96-98% sulfuric acid.
Further, the fluorine salt is one or two of potassium fluoride and ammonium fluoride.
The etching process of the etching solution for etching the ultrahigh-power light resistance glass chip comprises the following steps of (1) etching the light resistance glass chip in a coarse etching solution at the etching temperature of 10-30 ℃; the corrosion temperature of the photoresist glass chip corroded by the crude corrosion liquid in the fine corrosion liquid is-10 ℃ to-4 ℃.
Further, the corrosion depth of the light resistance glass chip in the crude corrosion liquid is 70% -90% of the set depth; then the etching solution is etched to a set depth in the fine etching solution.
Furthermore, the corrosion depth of the photoresist glass chip in the crude corrosion liquid is 80% -85% of the set depth.
The invention has the beneficial effects that:
1. the method combines the rough corrosion and the fine corrosion on the ultra-high power light resistance glass chip, has high ditching speed and small ditching depth error, improves the production efficiency and increases the consistency of corroded core particles; the ratio of the depth to the width of the ditch is improved, the area of the table top is increased on the premise of ensuring the ditching depth, and the quality of a chip is improved; the utilization rate of the mixed acid of the corrosive liquid is high, and the production cost is reduced; and adding mixed fluorine salt into the crude corrosion solution, wherein after the inorganic fluorine salt is dissolved in the corrosion solution, the concentration of fluorine ions in the corrosion solution is increased, and the corrosion effect of the crude corrosion solution is improved.
2. The reaction temperature of the light resistance glass chip in the crude corrosion liquid is high, the concentration of glacial acetic acid is low, the reaction rate in the production is high, the reaction rate in the fine corrosion liquid is low, and the corrosion depth is controlled to a set depth through fine corrosion on the premise that a certain corrosion depth is achieved, so that the corrosion depth is simple and convenient to control, and the precision is high; the etching process can reduce the total etching time and increase the etching precision;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
The etching solution for etching the ultra-high-power light resistance glass chip comprises a coarse etching solution and a fine etching solution, wherein the coarse etching solution is prepared from the following components in percentage by volume: 30 parts of 38-42% hydrofluoric acid, 40 parts of 65-70% nitric acid, 10 parts of 99.9% glacial acetic acid, 15 parts of 96-98% sulfuric acid and 5 parts of saturated fluorine salt solution, wherein the fluorine salt is potassium fluoride saturated solution;
the fine corrosive liquid is prepared from the following components in percentage by volume: 25 parts of 38-42% hydrofluoric acid, 25 parts of 65-70% nitric acid, 40 parts of 99.9% glacial acetic acid and 10 parts of 96-98% sulfuric acid.
The corrosion process of the corrosive liquid for etching the ultrahigh-power light resistance glass chip by adopting the corrosive liquid comprises the following steps: controlling the corrosion temperature of the light resistance glass chip in the crude corrosion liquid to be 10-30 ℃; controlling the corrosion temperature of the light resistance glass chip corroded by the coarse corrosion liquid in the fine corrosion liquid to be-10 ℃ to-4 ℃; wherein the corrosion depth of the light resistance glass chip in the rough corrosion liquid is 70% -90% of the set depth, and then the light resistance glass chip is corroded in the fine corrosion liquid to the set depth.
Example 2
The etching solution for etching the ultra-high-power light resistance glass chip comprises a coarse etching solution and a fine etching solution, wherein the coarse etching solution is prepared from the following components in percentage by volume: 40 parts of 38-42% hydrofluoric acid, 35 parts of 65-70% nitric acid, 8 parts of 99.9% glacial acetic acid, 15 parts of 96-98% sulfuric acid and 2 parts of saturated fluorine salt solution, wherein the fluorine salt is ammonium fluoride saturated solution;
the fine corrosive liquid is prepared from the following components in percentage by volume: 28 parts of 38-42% hydrofluoric acid, 27 parts of 65-70% nitric acid, 40 parts of 99.9% glacial acetic acid and 15 parts of 96-98% sulfuric acid.
The corrosion process of the corrosive liquid for etching the ultrahigh-power light resistance glass chip by adopting the corrosive liquid comprises the following steps: controlling the corrosion temperature of the light resistance glass chip in the crude corrosion liquid to be 10-30 ℃; controlling the corrosion temperature of the light resistance glass chip corroded by the coarse corrosion liquid in the fine corrosion liquid to be-10 ℃ to-4 ℃; wherein the corrosion depth of the light resistance glass chip in the rough corrosion liquid is 80% -85% of the set depth, and then the light resistance glass chip is corroded in the fine corrosion liquid to the set depth.
Example 3
The etching solution for etching the ultra-high-power light resistance glass chip comprises a coarse etching solution and a fine etching solution, wherein the coarse etching solution is prepared from the following components in percentage by volume: 50 parts of 38-42% hydrofluoric acid, 32 parts of 65-70% nitric acid, 5 parts of 99.9% glacial acetic acid, 10 parts of 96-98% sulfuric acid and 3 parts of a saturated villiaumite solution, wherein the villiaumite is a saturated solution prepared by mixing potassium fluoride and ammonium fluoride in a mass ratio of 1: 1;
the fine corrosive liquid is prepared from the following components in percentage by volume: 30 parts of 38-42% hydrofluoric acid, 25 parts of 65-70% nitric acid, 32 parts of 99.9% glacial acetic acid and 13 parts of 96-98% sulfuric acid.
The corrosion process of the corrosive liquid for etching the ultrahigh-power light resistance glass chip by adopting the corrosive liquid comprises the following steps: controlling the corrosion temperature of the light resistance glass chip in the crude corrosion liquid to be 10-20 ℃; controlling the corrosion temperature of the light resistance glass chip corroded by the coarse corrosion liquid in the fine corrosion liquid to be-10 ℃ to-4 ℃; wherein the corrosion depth of the light resistance glass chip in the rough corrosion liquid is 80% -85% of the set depth, and then the light resistance glass chip is corroded in the fine corrosion liquid to the set depth.
Taking an example of the etching depth of the ultrahigh-power light resistance glass chip being 130 μm, wherein the etching solution for the comparative test is prepared by mixing 50 parts of nitric acid with a mol concentration of 65-70%, 25 parts of hydrofluoric acid with a mol concentration of 38-42%, 12 parts of sulfuric acid with a mol concentration of 96-98% and 40 parts of glacial acetic acid with a mol concentration of 99.9%, the etching time and the error are detailed in the following table:
as can be seen from the above table, the etching time required for the first etching by using the etching solution disclosed in the prior art is 8-15 min, and the error of the ditching depth is 20 μm; by adopting the etching solution and the etching process in any embodiment, the secondary rough etching and the fine etching are combined, the etching depth of the rough etching solution is about 100 mu m and needs 3-6 min, the residual etching depth is etched by the fine etching solution for 2-8 min, and the error is not more than 10 mu m. The etching process can reduce the total etching time and increase the etching precision.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (4)
1. The etching solution for etching the ultra-high power light resistance glass chip is characterized in that: the corrosion-resistant material comprises a crude corrosion solution and a fine corrosion solution, wherein the crude corrosion solution is prepared from the following components in percentage by volume: 30-50 parts of 38-42% hydrofluoric acid, 30-40 parts of 65-70% nitric acid, 5-10 parts of 99.9% glacial acetic acid, 5-15 parts of 96-98% sulfuric acid and 1-5 parts of saturated fluorine salt solution;
the fine corrosive liquid is prepared from the following components in percentage by volume: 25-30 parts of 38-42% hydrofluoric acid, 25-30 parts of 65-70% nitric acid, 30-40 parts of 99.9% glacial acetic acid and 10-15 parts of 96-98% sulfuric acid.
2. The etching solution for etching an ultra-high power light resistance glass chip as claimed in claim 1, wherein: the fluorine salt is one or two of potassium fluoride and ammonium fluoride.
3. The corrosion process of the corrosive liquid for etching the ultrahigh-power light-resistant glass chip adopts the corrosive liquid for etching the ultrahigh-power light-resistant glass chip as claimed in claim 1 or 2 to carry out corrosion, and is characterized in that: the corrosion temperature of the light resistance glass chip in the crude corrosive liquid is 10-30 ℃; the corrosion temperature of the light resistance glass chip corroded by the coarse corrosion liquid in the fine corrosion liquid is-10 ℃ to-4 ℃;
the corrosion depth of the light resistance glass chip in the crude corrosion liquid is 70% -90% of the set depth; then the etching solution is etched to a set depth in the fine etching solution.
4. The etching process of the etching solution for etching the ultra-high power light resistance glass chip, as recited in claim 3, wherein: and the corrosion depth of the photoresist glass chip in the crude corrosion liquid is 80% -85% of the set depth.
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