CN114068298A - Wafer surface processing method - Google Patents
Wafer surface processing method Download PDFInfo
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- CN114068298A CN114068298A CN202010765288.7A CN202010765288A CN114068298A CN 114068298 A CN114068298 A CN 114068298A CN 202010765288 A CN202010765288 A CN 202010765288A CN 114068298 A CN114068298 A CN 114068298A
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- wafer
- depth
- grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
Abstract
The invention discloses a method for processing a wafer surface, which comprises the following steps: roughly grinding the surface of the wafer by adopting a grinding wheel with a first mesh number, wherein the depth of the rough grinding is a preset first depth; fine grinding the surface of the wafer by adopting a grinding wheel with a second mesh number, wherein the fine grinding depth is a preset second depth; the second depth is smaller than the first depth, and the second mesh number is larger than the first mesh number; etching the surface of the wafer by using corrosive liquid, wherein the etching depth is a preset third depth; the third depth is less than the second depth; the corrosive liquid comprises mixed acid liquid consisting of nitric acid, hydrofluoric acid and glacial acetic acid. The invention can rapidly etch the surface of the semiconductor wafer by using a small amount of corrosive liquid on the premise of ensuring the surface smoothness of the wafer, can effectively reduce the consumption of chemical reagents in the process of processing the surface of the wafer, and greatly reduces the operation time of processing the surface of the wafer, thereby greatly reducing the cost of processing the surface of the wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer surface processing method.
Background
The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit. With the continuous development of high density, high performance, miniaturization, and light weight of semiconductor chips, the process of wafer surface processing becomes increasingly important. At present, a wet etching process is mainly used to process the surface of a wafer, so that the surface of the wafer reaches a certain required groove depth. However, since the wet etching process requires a developing solution, a fixing solution and a large amount of acid reagent to corrode the silicon wafer, the wet etching process is only used to process the surface of the wafer, a large amount of chemical reagent is required to be used, the environment is polluted, the production period is long, the production cost is increased, and the efficiency is low.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a method for processing a wafer surface, which can effectively reduce the consumption of chemical reagents during the processing of the wafer surface, and greatly reduce the operation time of the wafer surface processing, thereby greatly reducing the cost of the wafer surface processing, and improving the efficiency of the wafer surface processing.
In order to achieve the above object, an embodiment of the present invention provides a method for processing a wafer surface, including:
roughly grinding the surface of the wafer by adopting a grinding wheel with a first mesh number, wherein the depth of the rough grinding is a preset first depth;
fine grinding the surface of the wafer by adopting a grinding wheel with a second mesh number, wherein the fine grinding depth is a preset second depth; the second depth is smaller than the first depth, and the second mesh number is larger than the first mesh number;
etching the surface of the wafer by using corrosive liquid, wherein the etching depth is a preset third depth; the third depth is less than the second depth; the corrosive liquid comprises mixed acid liquid consisting of nitric acid, hydrofluoric acid and glacial acetic acid.
As an improvement of the scheme, the volume ratio of nitric acid, hydrofluoric acid and glacial acetic acid in the mixed acid liquid is 6: 3: 1.
as an improvement of the scheme, the corrosion solution further comprises an oxidant, a complexing agent, a surfactant and deionized water, and the corrosion solution comprises the following components in percentage by mass: 25% of acid mixing liquid, 10% of oxidant, 5-6% of complexing agent, 2% of surfactant and 57-58% of deionized water.
As an improvement of the above scheme, the coarse grinding of the surface of the wafer by using the grinding wheel with the first mesh number specifically includes:
and roughly grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a first mesh number downwards feeds at a speed of 80-100 mu m/s and the rotating speed of the grinding wheel is 4000 rpm.
As an improvement of the above scheme, the fine grinding of the surface of the wafer by using the grinding wheel with the second mesh number specifically includes:
and grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a second mesh number has a downward feeding speed of 10-20 mu m/s and the rotating speed of the grinding wheel is 5000 rpm.
As an improvement of the scheme, the first mesh number is 800 meshes, and the second mesh number is 1200 meshes.
As an improvement of the scheme, the temperature of the corrosive liquid is 0 to-10 ℃.
As an improvement of the scheme, the time for etching the surface of the wafer by using the etching solution is 3-5 min.
As an improvement of the above scheme, the first depth is 2mm, the second depth is 450-.
Compared with the prior art, the method for processing the surface of the wafer provided by the embodiment of the invention has the advantages that the surface of the wafer is roughly ground by adopting the grinding wheel with the first mesh number, so that most of the thickness of the semiconductor wafer is removed quickly; then, the surface of the wafer is finely ground by adopting a grinding wheel with a second mesh number, so that the surface of the roughly ground semiconductor wafer is polished, the smoothness of the surface of the semiconductor wafer meets the requirement, and meanwhile, the surface of the semiconductor wafer can be thinned at a higher thinning speed than that of the semiconductor wafer by adopting wet etching; and finally, etching the surface of the finely ground wafer by using an etching solution, wherein the etching solution mainly prepared from nitric acid, hydrofluoric acid and glacial acetic acid is adopted, so that the etching speed of the surface of the semiconductor wafer can be increased. Therefore, the embodiment of the invention can rapidly etch the surface of the semiconductor wafer by using a small amount of corrosive liquid on the premise of ensuring the surface smoothness of the wafer, can effectively reduce the consumption of chemical reagents in the process of processing the surface of the wafer, and greatly reduces the operation time of processing the surface of the wafer, thereby greatly reducing the cost of processing the surface of the wafer and improving the processing efficiency of the surface of the wafer.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a process flow diagram of a method for processing a wafer surface according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of the invention provides a method for processing a wafer surface, which includes the following steps:
s10, roughly grinding the surface of the wafer by using a grinding wheel with a first mesh number, wherein the depth of the rough grinding is a preset first depth;
s11, finely grinding the surface of the wafer by adopting a grinding wheel with a second mesh number, wherein the finely ground depth is a preset second depth; the second depth is smaller than the first depth, and the second mesh number is larger than the first mesh number;
s12, etching the surface of the wafer by using corrosive liquid, wherein the etching depth is a preset third depth; the third depth is less than the second depth; the corrosive liquid comprises mixed acid liquid consisting of nitric acid, hydrofluoric acid and glacial acetic acid.
Compared with the prior art, the method for processing the surface of the wafer provided by the embodiment of the invention has the advantages that the surface of the wafer is roughly ground by adopting the grinding wheel with the first mesh number, so that most of the thickness of the semiconductor wafer is removed quickly; then, the surface of the wafer is finely ground by adopting a grinding wheel with a second mesh number, so that the surface of the roughly ground semiconductor wafer is polished, the smoothness of the surface of the semiconductor wafer meets the requirement, and meanwhile, the surface of the semiconductor wafer can be thinned at a higher thinning speed than that of the semiconductor wafer by adopting wet etching; and finally, etching the surface of the finely ground wafer by using an etching solution, wherein the etching solution mainly prepared from nitric acid, hydrofluoric acid and glacial acetic acid is adopted, so that the etching speed of the surface of the semiconductor wafer can be increased. Therefore, the embodiment of the invention can rapidly etch the surface of the semiconductor wafer by using a small amount of corrosive liquid on the premise of ensuring the surface smoothness of the wafer, can effectively reduce the consumption of chemical reagents in the process of processing the surface of the wafer, and greatly reduces the operation time of processing the surface of the wafer, thereby greatly reducing the cost of processing the surface of the wafer and improving the processing efficiency of the surface of the wafer.
It can be understood that the rough grinding target depth is greater than the fine grinding target depth, and the fine grinding target depth is greater than the etching depth of the etching solution, so that the surface of the semiconductor wafer can be processed most quickly on the premise of ensuring the surface smoothness of the semiconductor wafer, and the surface of the semiconductor wafer can be etched quickly by using a smaller amount of the etching solution.
In the embodiment of the invention, the etching solution comprising the mixed acid solution consisting of nitric acid, hydrofluoric acid and glacial acetic acid is adopted, so that the etching solution can be ensured to have good etching speed on the semiconductor wafer. Specifically, the semiconductor wafer generally contains silicon, and hydrofluoric acid has a corrosion effect on silicon and can effectively corrode the semiconductor wafer; in addition, the nitric acid can cause the shedding of surface substances of the semiconductor wafer, thereby facilitating the rapid corrosion of the surface of the semiconductor wafer. Therefore, the combination of the nitric acid and the hydrofluoric acid can greatly improve the etching speed of the surface of the semiconductor wafer. In addition, the glacial acetic acid mainly plays a role in neutralization, and can ensure that the nitric acid and the hydrofluoric acid can be well matched in the etching solution, so that the etching solution can have good corrosivity on the surface of the semiconductor wafer.
Illustratively, the volume ratio of nitric acid, hydrofluoric acid and glacial acetic acid in the mixed acid liquid is 6: 3: 1. after the intensive research on the component proportion of the mixed acid liquid in the corrosive liquid by the inventor, the inventor finds that: when the volume ratio of nitric acid, hydrofluoric acid and glacial acetic acid in the mixed acid liquid is 6: 3: 1, the etching solution can have the best corrosivity for the semiconductor wafer and can form a large amount of stable bubbles, so that the effective falling of substances on the surface of the semiconductor wafer is facilitated; the proportion can also ensure that hydrofluoric acid has good corrosivity on the surface of the semiconductor wafer, ensure that the corrosion speed of the hydrofluoric acid on the surface of the semiconductor wafer can be matched with the falling speed of substances on the surface of the wafer caused by bubbles generated by nitric acid, and prevent the corrosion speed of the hydrofluoric acid from being greatly higher than the falling speed of the substances on the surface of the wafer, thereby ensuring that the surface of the wafer has good corrosion speed; in addition, the proportion can ensure that the glacial acetic acid has good neutralization effect, so that the hydrofluoric acid and the nitric acid can be well matched in the corrosive liquid.
Preferably, the etching solution further comprises an oxidant, a complexing agent, a surfactant and deionized water, and the etching solution comprises the following components in percentage by mass: 25% of acid mixing liquid, 10% of oxidant, 5-6% of complexing agent, 2% of surfactant and 57-58% of deionized water. After the intensive research on the component proportion of the corrosive liquid by the inventor, the inventor finds that: when the etching solution contains an oxidant with oxidation corrosion effect, the corrosivity of the etching solution can be improved, so that the etching efficiency of the surface of the wafer is improved; when the corrosive liquid comprises the complexing agent, the phenomena of flocculation and sedimentation can be avoided in the corrosive liquid; when the corrosion liquid comprises the surfactant, the dispersion stability of the corrosion liquid can be improved; and when the components in the corrosive liquid are 25% by mass of the mixed acid liquid, 10% by mass of the oxidizing agent, 5-6% by mass of the complexing agent, 2% by mass of the surfactant and 57-58% by mass of the deionized water, the corrosive liquid can have the best corrosion effect.
In the embodiment of the present invention, for example, the rough grinding is performed on the surface of the wafer by using a grinding wheel with a first mesh number, specifically: and roughly grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a first mesh number downwards feeds at a speed of 80-100 mu m/s and the rotating speed of the grinding wheel is 4000 rpm.
In the embodiment, the grinding method using the grinding wheel can perform rough grinding on the surface of the semiconductor wafer more quickly without damaging the semiconductor wafer.
In the embodiment of the present invention, for example, the fine grinding of the surface of the wafer by using the grinding wheel with the second mesh number includes: and grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a second mesh number has a downward feeding speed of 10-20 mu m/s and the rotating speed of the grinding wheel is 5000 rpm.
In the embodiment, the grinding mode of the grinding wheel is adopted, so that the surface of the semiconductor wafer can be ground more quickly and better.
The surface of the semiconductor wafer may be ground or polished by other grinding methods, which are not limited in particular.
In the above embodiment of the invention, the first mesh number is 800 meshes, and the second mesh number is 1200 meshes.
After intensive research on mechanical grinding by the inventors, the inventors found that: when the number of the grinding wheels is less than 800 meshes or more than 1200 meshes, the grinding effect of the grinding wheels is poor, and the surface of the wafer cannot be effectively polished; when the number of the grinding wheels is 800 or 1200, the grinding effect of the grinding wheel is the best, and the surface of the wafer can be effectively polished.
In the embodiment of the invention, the temperature of the etching solution is 0 to-10 ℃ for example, so that the surface of the semiconductor wafer can be well etched.
In the embodiment of the invention, in step S12, the etching time of the surface of the wafer with the etching solution is 3-5min, which enables the surface of the semiconductor wafer to be etched well.
In the above embodiment of the invention, exemplarily, the first depth is 2mm, the second depth is 450-. The inventor finds out through intensive research that: when the accurate grinding depth is 450-; when the accurate grinding depth is more than 500um, the etching effect of the next procedure can be influenced; when the precision grinding depth is between 300-450um, the stress is large, and the wafer is deformed. Therefore, by adopting the depth setting mode, the surface of the semiconductor wafer can be quickly and effectively processed, the consumption of the corrosive liquid can be ensured to be less, and the best surface processing effect of the wafer can be ensured.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A method of wafer surface processing, comprising:
roughly grinding the surface of the wafer by adopting a grinding wheel with a first mesh number, wherein the depth of the rough grinding is a preset first depth;
fine grinding the surface of the wafer by adopting a grinding wheel with a second mesh number, wherein the fine grinding depth is a preset second depth; the second depth is smaller than the first depth, and the second mesh number is larger than the first mesh number;
etching the surface of the wafer by using corrosive liquid, wherein the etching depth is a preset third depth; the third depth is less than the second depth; the corrosive liquid comprises mixed acid liquid consisting of nitric acid, hydrofluoric acid and glacial acetic acid.
2. The method for processing the surface of the wafer as claimed in claim 1, wherein the volume ratio of the nitric acid to the hydrofluoric acid to the glacial acetic acid in the mixed acid solution is 6: 3: 1.
3. the wafer surface processing method according to claim 1, wherein the etching solution further comprises an oxidizing agent, a complexing agent, a surfactant and deionized water, and the etching solution comprises the following components in percentage by mass: 25% of acid mixing liquid, 10% of oxidant, 5-6% of complexing agent, 2% of surfactant and 57-58% of deionized water.
4. The method of claim 1, wherein the grinding wheel with the first mesh number is used for rough grinding the surface of the wafer, and the method comprises the following steps:
and roughly grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a first mesh number downwards feeds at a speed of 80-100 mu m/s and the rotating speed of the grinding wheel is 4000 rpm.
5. The method of claim 1, wherein the surface of the wafer is ground using a second number of grinding wheels, specifically:
and grinding the surface of the wafer by adopting a grinding mode that a grinding wheel with a second mesh number has a downward feeding speed of 10-20 mu m/s and the rotating speed of the grinding wheel is 5000 rpm.
6. The method as claimed in claim 1, wherein the first mesh is 800 mesh and the second mesh is 1200 mesh.
7. The method for processing the surface of the wafer as claimed in claim 1, wherein the temperature of the etching solution is 0 to-10 ℃.
8. The method for processing the surface of the wafer as claimed in claim 1, wherein the etching time of the surface of the wafer with the etching solution is 3-5 min.
9. The method as claimed in any one of claims 1 to 8, wherein the first depth is 2mm, the second depth is 450-500 μm, and the third depth is 100-500 nm.
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| CN202010765288.7A CN114068298A (en) | 2020-08-03 | 2020-08-03 | Wafer surface processing method |
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| CN202010765288.7A CN114068298A (en) | 2020-08-03 | 2020-08-03 | Wafer surface processing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115895663A (en) * | 2022-12-28 | 2023-04-04 | 昆山金城试剂有限公司 | Silicon corrosive agent |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115895663A (en) * | 2022-12-28 | 2023-04-04 | 昆山金城试剂有限公司 | Silicon corrosive agent |
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