CN111341746A - 植球结构及制备工艺 - Google Patents

植球结构及制备工艺 Download PDF

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CN111341746A
CN111341746A CN202010175541.3A CN202010175541A CN111341746A CN 111341746 A CN111341746 A CN 111341746A CN 202010175541 A CN202010175541 A CN 202010175541A CN 111341746 A CN111341746 A CN 111341746A
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layer
ball
solder balls
metal layer
retaining wall
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梅嬿
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Hefei Qizhong Sealing Technology Co ltd
Chipmore Technology Corp Ltd
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Beijing Eswin Technology Co Ltd
Chipmore Technology Corp Ltd
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Application filed by Beijing Eswin Technology Co Ltd, Chipmore Technology Corp Ltd filed Critical Beijing Eswin Technology Co Ltd
Priority to CN202010175541.3A priority Critical patent/CN111341746A/zh
Publication of CN111341746A publication Critical patent/CN111341746A/zh
Priority to PCT/CN2020/122448 priority patent/WO2021179612A1/zh
Priority to JP2021574880A priority patent/JP2022537295A/ja
Priority to US17/617,306 priority patent/US20220223556A1/en
Priority to KR1020217040644A priority patent/KR20220007674A/ko
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Abstract

本发明提供一种植球结构及制备工艺，包括依序叠置的基板、导电层、钝化层、种子层及金属层，多个焊球分别植入所述金属层上，任意相邻的焊球之间设有挡墙，所述挡球用于防止所述焊球之间相互桥接。

Description

植球结构及制备工艺
技术领域
本发明涉及半导体集成电路制造工艺，特别涉及一种小间距植球结构及植球工艺。
背景技术
球栅阵列(Ball Grid Array，简称BGA)封装技术为应用在集成电路上的一种表面黏着技术，其在封装体基板的底部制作阵列，焊球作为电路的I/O端与印刷线路板(PCB)互接，具有成品率高、引脚数量大、设备简单等优势。
为了缩小晶圆级IC及封装的尺寸，焊球在芯片表面的分布趋势朝向小尺寸、密集型转变。目前，焊球之间的业界极限Gap(距离)约为40um，当焊球之间的距离不断缩减的时候，由于助焊剂在高温下产生流动，加之分子引力，造成球与球之间的桥接，进而对器件产生一系列不良影响，这些不良影响主要导致成品良率降低及可能造成短路电信面的影响。
因此，针对上述技术问题，有必要对植球结构以及封装工艺进行改进，以防止焊球之间间距缩小以及助焊剂流动出现“桥接”的现象。
发明内容
本发明所要解决的技术问题是克服因焊球之间间距缩小以及因助焊剂流动焊球之间出现“桥接”的问题，提高芯片封装工艺的成品良率，降低封装成本。
本发明提供一种植球结构，包括依序叠置的基板、导电层、钝化层、种子层及金属层，多个焊球分别植入所述金属层上，任意相邻的焊球之间设有挡墙，所述挡球用于防止所述焊球之间相互桥接。
作为可选的技术方案，所述挡墙设置于所述钝化层上，且自所述钝化层上凸出。
作为可选的技术方案，还包括介电层，所述介电层设置于所述钝化层上，所述挡墙设置于所述介电层上，且自所述介电层上凸出。
作为可选的技术方案，所述挡墙为采用介电材料形成的挡墙。
作为可选的技术方案，所述介电材料为聚酰亚胺。
作为可选的技术方案，所述挡墙在植球间的截面为梯形结构、三角形结构或者矩形结构。
作为可选的技术方案，所述挡墙在植球间的截面为上窄下宽的结构。
作为可选的技术方案，所述基板为一芯片结构。
本发明还提供一种植球结构的制备工艺，所述制备工艺包括：
步骤S1，提供基板，于所述基板上依次形成种子层以及金属层；
步骤S2，涂布介电材料于所述金属层上，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球；
其中，所述挡墙位于任意相邻的所述焊球之间。
本发明另提供一种植球结构的制备工艺，所述制备工艺包括：
步骤S1，提供基板，于所述基板上依次形成介电层、金属层；
步骤S2，涂布介电材料于所述金属层上，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球；
其中，所述挡墙位于任意相邻的所述焊球之间。
与现有技术相比，本发明提供的植球结构及制备工艺，通过在任意相邻的焊球之间形成挡墙，可避免焊球植入时，因助焊剂流通以及焊球液化导致的焊球之间桥接的问题，提高植球工艺的质量以及封装工艺的成品良率。其中，在芯片尺寸不变的情况下，可实现焊点增加，更小间距(植球间距<40um)的植球；或者说，在芯片上的焊点数量不变的情况下，因为植球间距缩减，可实现芯片封装尺寸减小。
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。
附图说明
图1为本发明第一实施例中的植球结构的示意图。
图2A至图2E为图1中的植球结构形成过程的示意图。
图3为本发明第二实施例中的植球结构的示意图。
图4A至图4H为图3中的植球结构形成过程的示意图。
图5为图1中的植球结构的制备工艺流程图。
图6为图3中的植球结构的制备工艺流程图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，下面结合实施例及附图，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
图1为本发明第一实施例中的植球结构的示意图。
参照图1，植球结构100包括依序叠置的基板101、导电层110、钝化层102、种子层103以及金属层104，多个焊球105分别植入金属层104上，其中，任意相邻的焊球105之间设有挡墙106，防止焊球105之间相互桥接。
在一较佳的实施方式中，挡墙106自钝化层102上凸出。
在一较佳的实施方式中，挡墙106的截面为梯形，所述梯形的底部的宽约为33μm；所述梯形的高度不超过球高的2/3；所述梯形的顶部的宽约为15μm。
在本发明的其他实施方式中，挡墙还可以是其他形状，例如为三角形结构、矩形结构等，其中最优选为，上部较窄下部较宽的形状。其中，下部较宽使挡墙与介电层之间的接触面积大，有利于两者间稳定接触；上部较窄使挡墙在防止焊球之间的桥接的同时，不会与焊球相互干涉。
在一优选的实施方式中，挡墙106为由介电材料形成，所述介电材料例如为聚酰亚胺(PI)，但不以此为限。在本发明其他实施例中，所述介电材料还可以是无机材料，例如二氧化硅。
本实施例中，导电层110上覆盖钝化层102，钝化层102经图案化制程形成开口，导电层110从所述开口中暴露出；经溅镀等工艺形成种子层103与所述开口中，使得种子层103与导电层110电连接；再经电镀等工艺于种子层103上形成金属层104，金属层104的材料与种子层103的材料可以相同或者不同。此外，焊球105植入金属层104上，使得基板101中的电信号可经导电层110、种子层103、金属层104至焊球105导出。
图2A至图2E为图1中的植球结构形成过程的示意图。
参照图2A与图2B，提供基板101，在基板101上依次形成有导电层110、钝化层102、种子层103以及金属层104；其中，形成导电层110、钝化层102、种子层103以及金属层104的方式为已知技术，可参照现有技术中的相关说明。涂布介电材料1061于金属层104上，较佳的，介电材料1061涂布时整面覆盖基板101设置金属层104的一侧。
对介电材料1061进行曝光、显影后，再经固化制程，形成挡墙106。其中，所述曝光、显影制程中可通过第一光罩(mask)10上多个第一曝光孔11对特定区域进行曝光后显影，所述特定区域例如是钝化层102下方未设置导电层110的区域。本实施例中，挡墙106自钝化层102上凸出。
参照图2C，于金属层104上涂布助焊剂108，以便于固定焊球105。助焊剂108的涂布时，通过第一网板20进行涂布，第一网板20上对应金属层104设置多个第一开孔21，将助焊剂108从第一开孔21中涂布至对应的金属层104上。第一开孔21的尺寸小于或者等于所述金属层104的尺寸，便于助焊剂108涂布在金属层104的上表面上。
参照图2D，在助焊剂108上植入焊球105。焊球105植入时，通过第二网板30植入焊球105，第二网板30对应金属层104设置多个第二开孔31，多个焊球105从多个第二开孔31植入助焊剂108上。
参照图2E，在植入焊球105后，移除第二网板30，为了促进焊球105与助焊剂108之间的衔接，使得焊球105与金属层104之间稳固电连接，通过一设定温度(如设定温度可以为220摄氏度)进行回焊作业。回焊作业时，焊球105在设定温度下液化，助焊剂108液化后带动焊球105移动，但，由于相邻的焊球105之间设有挡墙106，通过挡墙106的隔离作用，相邻的焊球105不会因为自身液化以及助焊剂108流动而形成“桥接”现象。
需要说明的是，在本发明其他实施方式中，挡墙可形成于种子层和金属层之前。例如，基板上导电层上先制作钝化层；接着，在钝化层上整面涂布介电材料，例如聚酰亚胺；继续对介电材料曝光、显影、固化后形成挡墙；然后，在钝化层对应于导电层的开口处电镀种子层和金属层；最后，通过第一网板涂布助焊剂于金属层上，通过第二网板植入焊球于助焊剂上，在经过回焊作业，使得焊球稳固连接于金属层。
在一优选的实施方式中，钝化层的材料与挡墙106的材料可以相同或者不同。
在一优选的实施方式中，基板101为一芯片结构。
图5为本发明第一实施例中的植球结构100的制备工艺的流程图。
参照图5，所述制备工艺300包括：
步骤S1，提供基板，于所述基板上依次形成种子层以及金属层；
步骤S2，涂布介电材料于所述金属层，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球。
在一优选的实施方式中，所述挡墙位于任意相邻的焊球之间。
图3为本发明第二实施例中的植球结构的示意图。
参照图3，本发明第二实施例中提供的植球结构200与植球结构100相比，区别在于，植球结构200中的挡墙206的形成于钝化层202上方的介电层207上。
具体来讲，植球结构200包括依序叠置的基板201、导电层210、钝化层202以及种子层203，焊球205通过金属层204电连接于种子层203，其中，还包括设置于钝化层202上的介电层207，挡墙206设置于介电层207上，从介电层207上凸出，且位于任意相邻的焊球205之间，以防止焊球205之间相互桥接。
在一较佳的实施方式中，挡墙206的截面为梯形。
在本发明的其他实施方式中，挡墙还可以是其他形状，例如为三角形结构、矩形结构等，其中最优选为，上部较窄下部较宽的形状。其中，下部较宽使挡墙与保护层之间的接触面积大，有利于两者间稳定接触；上部较窄使挡墙在防止焊球之间的桥接的同时，不会与焊球相互干涉。
在一优选的实施方式中，挡墙206为由介电材料形成，所述介电材料例如为聚酰亚胺(PI)，但不以此为限。在本发明其他实施例中，所述介电材料还可以是无机材料，例如二氧化硅。
本实施例中，导电层210上覆盖钝化层202、介电层207，钝化层202、介电层207分别经曝光、显影制程后形成开口，使得导电层210从所述开口中暴露出；经溅镀等工艺形成种子层203于所述开口中，种子层203与导电层210电连接；再经电镀等工艺于种子层203上形成金属层204，金属层204的材料与种子层203的材料可以相同或者不同。此外，焊球205植入在金属层204上，使得基板201中的电信号自导电层210、种子层203、金属层204以及焊球205导出。
在一较佳的实施方式中，介电层207的材料可以选自无机材料和/或有机材料。
图4A至图4H为图3中的植球结构形成过程的示意图。其中，图4A至图4H中与图2A至图2E中相同标号的图案具有相似的功能，不另赘述。
参照图4A与图4B，提供基板201，在基板201上依次形成导电层210与钝化层202；于钝化层202上涂布保护材料2071，对保护材料2071曝光、显影后，形成开口，导电层210从所述开口中暴露出；再经固化制程，形成介电层207。其中，所述曝光、显影制程中可通过第二光罩(mask)40上多个第二曝光孔41对保护材料2071的特定区域曝光，然后显影形成所述开口。所述保护材料2071的特定区域对应于基板201上导电层210所在的位置。
参照图4C与图4D，涂布介电材料2061于介电层207上，对介电材料2061曝光、显影后，再经固化制程，形成挡墙206。其中，所述曝光、显影制程中，可通过第一光罩10上多个第一曝光孔11对介电材料2061的特定区域曝光，然后显影、固化形成挡墙206。所述介电材料2061的特定区域例如是，介电材料2061下方未设置导电层210的区域。本实施例中，挡墙206自介电层207上凸出。
参照图4E，电镀种子层203于介电层207的开口中，种子层203与金属层204之间电连接。继续于种子层203上形成金属层204。
参照图4F，于金属层204上先涂布助焊剂208，以便于固定焊球205。助焊剂208的涂布时，通过第一网板20进行涂布，第一网板20上对应金属层204设置多个第一开孔21，将助焊剂208从第一开孔21中涂布至对应的金属层204上。较佳的，第一开孔21的尺寸小于或者等于金属层204的尺寸，便于助焊剂208涂布在金属层204的上表面上。
参照图4G，在助焊剂208上植入焊球205。焊球205植入时，通过第二网板30植入焊球205，第二网板30对应金属层204设置多个第二开孔31，多个焊球205从第二开孔31植入助焊剂208上。本实施例中，任意相邻的焊球205之间设有挡墙206。
参照图4H，在植入焊球205后，移除第二网板30，为了促进焊球205与助焊剂208之间的衔接，使得焊球205与金属层204之间稳固电连接，通过一设定温度(如设定温度可以为220摄氏度)进行回焊作业。回焊作业时，焊球205在设定温度下液化，助焊剂208液化后带动焊球205移动，但，由于相邻的焊球205之间设有挡墙206，通过挡墙206的隔离作用，相邻的焊球205不会因为自身液化以及助焊剂208流动而形成“桥接”现象。
需要说明的是，在本发明其他实施方式中，挡墙还可形成于种子层和金属层之后。即，基板上依序形成导电层、钝化层、介电层、种子层以及金属层后；接着，在金属层上涂布介电材料，例如聚酰亚胺；继续对介电材料曝光、显影和固化后形成挡墙；最后，通过第一网板涂布助焊剂于金属层上，通过第二网板植入焊球于助焊剂上，在经过回焊作业，使得焊球稳固连接于金属层。
在一优选的实施方式中，钝化层202、介电层207及挡墙206使用的材料可以分别相同或者分别不同。
在一优选的实施方式中，基板201为一芯片结构。
图6为本发明第二实施例中的植球结构200的制备工艺的流程图。
参照图6，所述制备工艺600包括：
步骤S1，提供基板，于所述基板上形成介电层、金属层；
步骤S2，涂布介电材料于所述金属层上，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球。
在一优选的实施方式中，所述挡墙位于任意相邻的焊球之间。
综上，本发明提供的植球结构及制备工艺，通过在任意相邻的焊球之间形成挡墙，可避免焊球植入时，因助焊剂流通以及焊球液化导致的焊球之间桥接的问题，提高植球工艺的质量以及封装工艺的成品良率。其中，在芯片尺寸不变的情况下，可实现焊点增加，更小间距(植球间距<40um)的植球；或者说，在芯片上的焊点数量不变的情况下，因为植球间距缩减，可实现芯片封装尺寸减小。
当然，本发明还可有其他多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。

Claims (10)

1.一种植球结构，包括依序叠置的基板、导电层、钝化层、种子层及金属层，多个焊球分别植入所述金属层上，其特征在于，
任意相邻的焊球之间设有挡墙，所述挡球用于防止所述焊球之间相互桥接。
2.如权利要求1所述的植球结构，其特征在于，所述挡墙设置于所述钝化层上，且自所述钝化层上凸出。
3.如权利要求1所述的植球结构，其特征在于，还包括介电层，所述介电层设置于所述钝化层上，所述挡墙设置于所述介电层上，且自所述介电层上凸出。
4.如权利要求1所述的植球结构，其特征在于，所述挡墙为采用介电材料形成的挡墙。
5.如权利要求4所述的植球结构，其特征在于，所述介电材料为聚酰亚胺。
6.如权利要求1所述的植球结构，其特征在于，所述挡墙在植球间的截面为梯形结构、三角形结构或者矩形结构。
7.如权利要求1所述的植球结构，其特征在于，所述挡墙在植球间的截面为上窄下宽的结构。
8.如权利要求1所述的植球结构，其特征在于，所述基板为一芯片结构。
9.一种植球结构的制备工艺，其特征在于，所述制备工艺包括：
步骤S1，提供基板，于所述基板上依次形成种子层以及金属层；
步骤S2，涂布介电材料于所述金属层上，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球；
其中，所述挡墙位于任意相邻的所述焊球之间。
10.一种植球结构的制备工艺，其特征在于，所述制备工艺包括：
步骤S1，提供基板，于所述基板上形成介电层、金属层；
步骤S2，涂布介电材料于所述金属层上，所述介电材料整面覆盖所述基板；
步骤S3，对所述介电材料进行曝光、显影及固化后形成挡墙；
步骤S4，涂布助焊剂于所述金属层上；以及
步骤S5，于所述金属层上植入多个焊球；
其中，所述挡墙位于任意相邻的所述焊球之间。
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US17/617,306 US20220223556A1 (en) 2020-03-13 2020-10-21 Ball placement structure and preparation process thereof
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