CN1113412C - 电极为金属合金的半导体器件 - Google Patents
电极为金属合金的半导体器件 Download PDFInfo
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- CN1113412C CN1113412C CN98107066A CN98107066A CN1113412C CN 1113412 C CN1113412 C CN 1113412C CN 98107066 A CN98107066 A CN 98107066A CN 98107066 A CN98107066 A CN 98107066A CN 1113412 C CN1113412 C CN 1113412C
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- metal
- electrode
- aluminium
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 229910001092 metal group alloy Inorganic materials 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 78
- 239000011133 lead Substances 0.000 claims description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 52
- 239000010949 copper Substances 0.000 claims description 52
- 229910052802 copper Inorganic materials 0.000 claims description 52
- 229910052782 aluminium Inorganic materials 0.000 claims description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- 239000004411 aluminium Substances 0.000 claims description 44
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 39
- 229910052737 gold Inorganic materials 0.000 claims description 39
- 239000010931 gold Substances 0.000 claims description 39
- 229910052763 palladium Inorganic materials 0.000 claims description 39
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- 239000011575 calcium Substances 0.000 claims description 22
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- 229910052710 silicon Inorganic materials 0.000 claims description 16
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052684 Cerium Inorganic materials 0.000 claims description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 11
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 11
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- 239000002131 composite material Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
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- 206010037549 Purpura Diseases 0.000 description 2
- 241001672981 Purpura Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000607479 Yersinia pestis Species 0.000 description 2
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- 238000009825 accumulation Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48747—Copper (Cu) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/48764—Palladium (Pd) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01057—Lanthanum [La]
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- H01L2924/01058—Cerium [Ce]
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- H01L2924/01—Chemical elements
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (46)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9037338A JPH10233408A (ja) | 1997-02-21 | 1997-02-21 | 金属接合構造及び半導体装置 |
JP37338/1997 | 1997-02-21 | ||
JP37338/97 | 1997-02-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1197291A CN1197291A (zh) | 1998-10-28 |
CN1113412C true CN1113412C (zh) | 2003-07-02 |
Family
ID=12494840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98107066A Expired - Fee Related CN1113412C (zh) | 1997-02-21 | 1998-02-21 | 电极为金属合金的半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6011305A (zh) |
JP (1) | JPH10233408A (zh) |
KR (1) | KR100333573B1 (zh) |
CN (1) | CN1113412C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102484080A (zh) * | 2009-06-18 | 2012-05-30 | 罗姆股份有限公司 | 半导体装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3848723B2 (ja) * | 1997-03-31 | 2006-11-22 | 株式会社日立製作所 | 半導体装置の実装構造体及びその検査方法 |
JP2000150560A (ja) * | 1998-11-13 | 2000-05-30 | Seiko Epson Corp | バンプ形成方法及びバンプ形成用ボンディングツール、半導体ウエーハ、半導体チップ及び半導体装置並びにこれらの製造方法、回路基板並びに電子機器 |
US6329722B1 (en) * | 1999-07-01 | 2001-12-11 | Texas Instruments Incorporated | Bonding pads for integrated circuits having copper interconnect metallization |
JP2001230360A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6888968B1 (en) | 2000-09-21 | 2005-05-03 | Kabushiki Kaisha Toshiba | Image processing apparatus and image processing method |
JP4513440B2 (ja) * | 2004-07-15 | 2010-07-28 | 住友ベークライト株式会社 | 半導体装置 |
US7656045B2 (en) * | 2006-02-23 | 2010-02-02 | Freescale Semiconductor, Inc. | Cap layer for an aluminum copper bond pad |
FR2977383A1 (fr) * | 2011-06-30 | 2013-01-04 | St Microelectronics Grenoble 2 | Plot de reception d'un fil de cuivre |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649535A (en) * | 1979-09-28 | 1981-05-06 | Tanaka Kikinzoku Kogyo Kk | Bonding wire for semiconductor device |
JPS6038846A (ja) * | 1983-08-12 | 1985-02-28 | Hitachi Micro Comput Eng Ltd | 封止体の構造 |
US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
JP2745065B2 (ja) * | 1988-05-02 | 1998-04-28 | 新日本製鐵株式会社 | 半導体素子用ボンディングワイヤ |
JPH01298743A (ja) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | 半導体装置 |
JP2737953B2 (ja) * | 1988-09-29 | 1998-04-08 | 三菱マテリアル株式会社 | 金バンプ用金合金細線 |
JP2621429B2 (ja) * | 1988-10-19 | 1997-06-18 | 三菱電機株式会社 | 半導体封止用エポキシ樹脂組成物 |
JP2600366B2 (ja) * | 1989-03-09 | 1997-04-16 | 富士通株式会社 | 半導体チップの実装方法 |
JPH03232258A (ja) * | 1989-12-28 | 1991-10-16 | Nitto Denko Corp | 半導体装置 |
JP2891427B2 (ja) * | 1990-02-02 | 1999-05-17 | 田中電子工業株式会社 | 半導体素子のAl電極パッド構造 |
JP2563652B2 (ja) * | 1990-07-17 | 1996-12-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH04179246A (ja) * | 1990-11-14 | 1992-06-25 | Nec Corp | 半導体装置の金属パッドの構造 |
JPH04229631A (ja) * | 1990-12-27 | 1992-08-19 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤー |
JPH06112251A (ja) * | 1992-09-30 | 1994-04-22 | Tanaka Denshi Kogyo Kk | 半導体素子用ボンディング線 |
US5635763A (en) * | 1993-03-22 | 1997-06-03 | Sanyo Electric Co., Ltd. | Semiconductor device having cap-metal layer |
JP2816290B2 (ja) * | 1993-05-11 | 1998-10-27 | 株式会社日立製作所 | 樹脂封止型半導体装置 |
US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
JP3085090B2 (ja) * | 1994-06-07 | 2000-09-04 | 住友金属鉱山株式会社 | ボンディングワイヤ |
-
1997
- 1997-02-21 JP JP9037338A patent/JPH10233408A/ja active Pending
-
1998
- 1998-02-20 KR KR1019980005347A patent/KR100333573B1/ko not_active IP Right Cessation
- 1998-02-21 CN CN98107066A patent/CN1113412C/zh not_active Expired - Fee Related
- 1998-02-23 US US09/027,953 patent/US6011305A/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102484080A (zh) * | 2009-06-18 | 2012-05-30 | 罗姆股份有限公司 | 半导体装置 |
CN102484080B (zh) * | 2009-06-18 | 2015-07-22 | 罗姆股份有限公司 | 半导体装置 |
US9780069B2 (en) | 2009-06-18 | 2017-10-03 | Rohm Co., Ltd. | Semiconductor device |
US10163850B2 (en) | 2009-06-18 | 2018-12-25 | Rohm Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US6011305A (en) | 2000-01-04 |
CN1197291A (zh) | 1998-10-28 |
JPH10233408A (ja) | 1998-09-02 |
KR19980071554A (ko) | 1998-10-26 |
KR100333573B1 (ko) | 2002-06-20 |
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