JP4513440B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4513440B2 JP4513440B2 JP2004209153A JP2004209153A JP4513440B2 JP 4513440 B2 JP4513440 B2 JP 4513440B2 JP 2004209153 A JP2004209153 A JP 2004209153A JP 2004209153 A JP2004209153 A JP 2004209153A JP 4513440 B2 JP4513440 B2 JP 4513440B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- semiconductor device
- aluminum
- resin composition
- gold wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 46
- 229910052737 gold Inorganic materials 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000011342 resin composition Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 150000002366 halogen compounds Chemical class 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
近年、半導体装置の適用範囲は拡大の一途をたどり、車載用途など高温環境下での使用が珍しくなくなってきており、半導体装置に対する高温環境下での信頼性の要求が急速に高まってきている。
一方、アルミパッドと金ワイヤの接合部では、125℃以上の高温で長時間放置すると金とアルミの間に合金層が形成され、この合金層にカーケンダルボイドと呼ばれる空隙が発生し、接合部の強度が低下したり、合金層がハロゲン化合物などにより腐食され接合部の強度が低下したりすることが知られている。
このような状況から、高温での信頼性を向上させる手法の開発が強く望まれていた。
[1]半導体素子と外部端子とがアルミパッド及び金ワイヤを介して接合され、少なくとも前記半導体素子、アルミパッド、及び金ワイヤを、樹脂組成物を用いて封止してなる半導体装置において、前記アルミパッドの厚みが0.1μm以上、3μm以下であり、前記金ワイヤが高純度金に最外殻電子の数が偶数である金属を0.001〜1重量%含み、かつ前記樹脂組成物中に含まれ、半導体装置を125℃以上の高温で長時間放置した場合など、金の中の格子上をアルミニウム原子が移動する際に、空隙同士を集まりやすくする性
質があり、カーケンダルボイドの生成を加速させる作用を有するホウ素、窒素、ナトリウム、アンチモン、モリブデン及びビスマス原子と、金の中に拡散したアルミニウム原子を容易に酸化し、接合部の合金を金とアルミニウム酸化物に分離する作用を有するハロゲン元素と、の総和量が0.3重量%以下であることを特徴とする半導体装置。
[2]前記最外殻電子の数が偶数である金属が、Be、Mg、Si、Ca、Sc、Ti、V、Mn、Fe、Co、Ni、Zn、Sr、Zr、Pd、Sn、Ba、Ta、W、Os、Ge、Ir及びPbから選ばれる少なくとも1種以上の金属である第[1]項記載の半導体装置。
以下、各成分について説明する。
最外殻電子の数が偶数である金属としては、特に限定するものでは無いが、安全性、入手のし易さ等を考慮すると、Be、Mg、Si、Ca、Sc、Ti、V、Mn、Fe、Co、Ni、Zn、Sr、Zr、Pd、Sn、Ba、Ta、W、Os、Ge、Ir及びPbが好ましい。またこれらの金属は、1種類を単独で添加しても、2種以上を併用して添加してよい。
実施例1
金ワイヤ1:Pd含有率0.001重量%、太さ30μm
アルミパッド1:100×100μm、厚み1.2μm
チップ:7×7mm、厚み0.35mm
封止用樹脂組成物1:
エポキシ樹脂(ジャパンエポキシレジン(株)・製、YX−4000H、融点105℃、エポキシ当量191) 6.0重量部
フェノールノボラック樹脂(軟化点65℃、水酸基当量104) 3.0重量部
球状溶融シリカ 90.5重量部
トリフェニルホスフィン 0.1重量部
カルナバワックス 0.2重量部
カーボンブラック 0.2重量部
をミキサーにて常温混合し、80〜100℃の加熱ロールで溶融混練し、冷却後粉砕し、エポキシ樹脂組成物を得た。
(ホウ素(B)0重量%、窒素(N)0重量%、ハロゲン元素0.002重量%、ナトリウム(Na)0.001重量%、アンチモン(Sb)0重量%、モリブデン(Mo)0重量%、ビスマス(Bi)0重量%)
ワイヤボンド性:上記の金ワイヤおよびチップを用い、Kaijo社製ワイヤボンダーFB131で荷重25g、超音波周波数60kHz、接合温度200℃の条件で、80pQFPを組み立てた。張り上げた金ワイヤを引っ張った時に接合面で破断するものを不合格、金ワイヤの一部が破断するものを合格とした。
高温信頼性:タブレット化した上記の封止用樹脂組成物を用い、80pQFP(14×20mm、2.7mm厚)を低圧トランスファー成形機にて、180℃、注入圧6.9MPa 、保圧時間35秒の条件で成形した。得られた80pQFPを175℃で4時間ポストキュアした後、200℃のオーブン中で1000時間熱処理し、処理後に端子間の抵抗値を測定した。処理前にくらべ抵抗値が1.0倍以上、1.2倍以下のものを○(合格)、1.2倍を超え10倍以下のものを△、10倍を超えるものを×とした(n=20)。
表1記載の金ワイヤ、アルミパッド、封止用樹脂組成物を用い、実施例1と同様にしてワイヤボンド性および高温信頼性を評価した。結果を表1に示す。
実施例1以外で用いた金ワイヤ2〜5は、そのPd含有量のみが金ワイヤ1と異なるのみである。
実施例1以外で用いたアルミパッド2、3は、その厚みのみがアルミパッド1と異なるのみである。
封止用樹脂組成物2〜11は、表1のとおりであり、それぞれのホウ素、窒素、フッ素、ナトリウム、塩素、臭素、沃素、アンチモン、モリブデン、及びビスマス原子の量、並びにそれらの総和量は、表1に記載のとおりである。
表2記載の金ワイヤを用いた他は、実施例1と同一のアルミパッド、封止用樹脂組成物を用い、実施例1と同様にしてワイヤボンド性および高温信頼性を評価した。結果を表2に示す。
実施例10及び比較例10は、表2に記載した添加量のBeを含有する金ワイヤを用いたものである。
実施例11及び比較例11は、表2に記載した添加量のCaを含有する金ワイヤを用いたものである。
実施例12及び比較例12は、表2に記載した添加量のBeとPdを含有する金ワイヤを用いたものである。
実施例13〜15及び比較例13は、表2に記載した添加量のGeを含有する金ワイヤを用いたものである。
Claims (2)
- 半導体素子と外部端子とがアルミパッド及び金ワイヤを介して接合され、少なくとも前記半導体素子、アルミパッド、及び金ワイヤを、樹脂組成物を用いて封止してなる半導体装置において、
前記アルミパッドの厚みが0.1μm以上、3μm以下であり、
前記金ワイヤが高純度金に最外殻電子の数が偶数である金属を0.001〜1重量%含み、
かつ前記樹脂組成物中に含まれ、半導体装置を125℃以上の高温で長時間放置した場合など、金の中の格子上をアルミニウム原子が移動する際に、空隙同士を集まりやすくする性質があり、カーケンダルボイドの生成を加速させる作用を有するホウ素、窒素、ナトリウム、アンチモン、モリブデン及びビスマス原子と、金の中に拡散したアルミニウム原子を容易に酸化し、接合部の合金を金とアルミニウム酸化物に分離する作用を有するハロゲン元素と、の総和量が0.3重量%以下である
ことを特徴とする半導体装置。 - 前記最外殻電子の数が偶数である金属が、Be、Mg、Si、Ca、Sc、Ti、V、Mn、Fe、Co、Ni、Zn、Sr、Zr、Pd、Sn、Ba、Ta、W、Os、Ge、Ir及びPbから選ばれる少なくとも1種以上の金属である請求項1記載の半導体装置。
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