CN111313660A - Hybrid resonant driving circuit and control method thereof - Google Patents

Hybrid resonant driving circuit and control method thereof Download PDF

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CN111313660A
CN111313660A CN201911154158.3A CN201911154158A CN111313660A CN 111313660 A CN111313660 A CN 111313660A CN 201911154158 A CN201911154158 A CN 201911154158A CN 111313660 A CN111313660 A CN 111313660A
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diode
resonant
switch tube
power device
main power
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彭晗
党子越
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention discloses a hybrid resonant driving circuit and a control method, and belongs to the field of switching power supplies. The circuit comprises a hybrid bridge structure, a resonant inductor and a main power device; the hybrid bridge structure comprises a first switch tube, a second switch tube, a first diode and a second diode, wherein a drain electrode of the first switch tube and a cathode of the first diode are connected with an anode of a driving power supply, a source electrode of the first switch tube is connected with a cathode of the second diode, an anode of the first diode is connected with a drain electrode of the second switch tube, and an anode of the second diode and a source electrode of the second switch tube are connected to a cathode of the driving power supply; one end of the resonant inductor is connected to the source electrode of the first switching tube, and the other end of the resonant inductor is connected with the drain electrode of the second switching tube and the grid electrode of the main power device. The invention reduces the drive loss, simplifies the control structure, and reduces the number of devices to a certain extent, thereby further reducing the volume.

Description

Hybrid resonant driving circuit and control method thereof
Technical Field
The invention belongs to the field of switching power supplies, and particularly relates to a hybrid resonant driving circuit and a control method thereof.
Background
In the development of power electronics technology, the key components and development of power electronics equipment have been dependent on power semiconductor devices. In recent years, with the development of semiconductor technology, silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) can realize higher switching speeds and switching frequencies. But as the switching frequency increases, the drive loss increases linearly. The traditional drive has larger drive loss under a high-frequency working environment, and is not matched with the SiC MOSFET power module in volume, so that the further improvement of the power density of the system is restricted.
Fig. 1 is a topology diagram of a conventional driver, which mainly includes a half-bridge structure and a driving resistor. It employs a half-bridge configuration to amplify the control signal to provide the switching voltage required by the SiC MOSFET gate. The driving resistor is added to inhibit the oscillation of the grid voltage in the switching process of the SiCMOS MOSFET. The energy provided by the driving power supply is completely consumed on the driving resistor, and the driving power supply needs larger power at high frequency, so the volume of the power supply is correspondingly larger.
Fig. 2 is a schematic diagram of a full-bridge resonant driving topology, which mainly includes a full-bridge structure and a resonant inductor. The resonant inductor Lr resonates with the SiC MOSFET input capacitor to feed back the energy in the input capacitor to the driving power supply, and the driving loss is reduced significantly compared to conventional driving. The Si MOSFET devices S1 and S3 are used to provide a resonant tank, and S2 and S4 are used to actively clamp the gate voltage to prevent overshoot and over-shoot due to the body diode and C of the Si MOSFETdsThe gate voltage drops due to reverse charging. However, this structure is complex to control, and devices are multiple, which is not favorable for improving power density.
On the other hand, the resonant driving realizes optimization of the switching characteristics of the power device by adjusting the slope of the switching transient process of the power device, such as reduction of switching loss and reduction of electromagnetic interference. Because the turn-on loss of the power device is often far greater than the turn-off loss, it is more important to optimize the turn-on process of the power device.
Based on the analysis, under the condition of high switching frequency, the traditional driving has high driving loss, high power and large volume of the required driving power supply; the full-bridge resonant driving reduces driving loss and requirements on a driving power supply, but is complex to control and multiple in devices. Meanwhile, the resonant driving based on the silicon device has the limitations of limited switching speed, large reverse recovery loss of the device and the like. For a power device, optimization of its turn-on process will directly affect the turn-on loss, di/dt and dv/dt of the device. The turn-on loss of the power device is much higher than the turn-off loss. Power devices often operate in a half-bridge topology for alternating switching operation. At a high switching frequency, the turn-off of a device is often influenced by the turn-on of another device, resulting in a false turn-on, i.e., a crosstalk phenomenon. In view of the above, there is a need to design a SiC MOSFET driver with simple control, low drive loss, optimized turn-on process and turn-off clamp.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a hybrid resonant driving circuit and a control method thereof, and aims to solve the problems of high driving loss, large volume and complex control of the conventional driving structure.
The invention provides a hybrid resonant driving circuit, which comprises a hybrid bridge structure, a resonant inductor and a main power device, wherein the resonant inductor is connected with the main power device;
the hybrid bridge structure comprises a first switch tube, a second switch tube, a first diode and a second diode, wherein a drain electrode of the first switch tube and a cathode of the first diode are connected with an anode of a driving power supply, a source electrode of the first switch tube is connected with a cathode of the second diode, an anode of the first diode is connected with a drain electrode of the second switch tube, and an anode of the second diode and a source electrode of the second switch tube are connected to a cathode of the driving power supply;
one end of the resonant inductor is connected to the source electrode of the first switching tube, and the other end of the resonant inductor is connected with the drain electrode of the second switching tube and the grid electrode of the main power device.
Further, the first switch tube and the second switch tube are both GaN HEMTs.
Further, the first switch tube is used for charging the grid resonance of the main power device.
Further, the second switch tube is used for turning off the main power device.
Further, the first diode, the second diode and the resonant inductor form an energy feedback loop.
The invention also provides a control method based on the hybrid resonant driving circuit, which comprises the following steps:
controlling the first switching tube to be conducted and the second switching tube to be turned off, enabling the resonant inductor to resonate with the grid input capacitor of the main power device, and enabling the current of the resonant inductor to start to rise;
when the grid voltage is charged to be higher than the positive voltage V of the driving power supplyccWhen the driving circuit is started, the first diode is connected, the first switching tube is disconnected, and the current of the resonant inductor is fed back to the driving power supply through the second diode, the resonant inductor and the first diode;
after the feedback process is finished, the second switching tube is controlled to be switched on, the first switching tube is switched off, and the grid input capacitor of the main power device discharges through the second switching tube until the grid voltage is equal to the voltage V of the negative electrode of the driving power supplyee。
Further, the resonant charging time of the resonant inductor and the input capacitor of the main power device is determined by the turn-on time of the first switch tube.
Further, the pulse width of the first switch tube control signal is calculated by the resonance time of the resonance inductor and the input capacitor of the main power device
Figure BDA0002282796650000031
Wherein C isiss_sIs the equivalent input capacitance of the main power device
Figure BDA0002282796650000032
VdriveDifference V for driving power supply outputdrive＝Vcc-Vee，QgIs the total charge of the gate of the main power device.
Further, the pulse width of the first switch tube control signal is determined by dynamically detecting the gate voltage of the main power device: when the grid voltage reaches the positive voltage V of the driving power supplyccAnd when the first switch tube is closed, the first switch tube is closed. The pulse width of the second switching tube control signal is generally determined by the duty cycle of the converter operation.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
(1) the resonance driving inductor is used for replacing the driving resistor, so that the energy provided by the driving power supply can be partially recycled, and the driving loss is reduced.
(2) The hybrid full-bridge driving circuit adopts a hybrid full-bridge structure, can greatly simplify control, only needs two control signals and only needs two switching devices compared with full-bridge resonance driving, reduces the number of the devices and further reduces the volume.
(3) The GaN HEMT is adopted, so that the reverse recovery loss is nearly 0, and compared with a Si MOSFET, the loss is lower, and the driving energy required in a bridge structure under high-frequency work can be reduced; and the GaN HEMT has high switching speed, can quickly switch off the SiC MOSFET, has smaller volume compared with the Si MOSFET and is beneficial to improving the power density.
(4) The direct clamping type switching-off strategy of the GaN HEMT is adopted, the direct clamping type switching-off strategy has an ultra-fast switching-off characteristic, signals and other detection signals in a system can be quickly and correspondingly switched off, gate clamping of a power device can be realized, and crosstalk is prevented.
Drawings
FIG. 1 is a schematic diagram of a conventional drive topology;
FIG. 2 is a schematic diagram of a full-bridge resonant drive topology;
FIG. 3 is a schematic diagram of a GaN-based device SiC MOSFET resonant drive structure of the present invention;
FIG. 4 is a schematic diagram of control signals in the resonant drive circuit of the present invention;
FIG. 5 is a turn-on procedure of the invention measured experimentally;
FIG. 6 is a shut down procedure of the invention measured experimentally;
FIG. 7 is a conventional drive-off waveform;
fig. 8 is a comparison of the losses of the present invention compared to a prior art full bridge resonant structure based on Si devices under driving the same SiC MOSFET.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
An embodiment of the present invention provides a GaN device-based SiC MOSFET resonant driving circuit, as shown in fig. 3, including a hybrid bridge structure and a resonant inductor LrAnd a main power device M1Main power device M1Is a SiC MOSFET; in the figure RgIs a gate parasitic resistance, Cgd、Cgs、CdsAre all inter-electrode parasitic capacitances.
The hybrid bridge structure comprises a first switch tube S1A second switch tube S2A first diode D1And a second diode D2The first switch tube S1And a second switching tube S2Are all GaN HEMTs. The first switch tube S1And the first diode D1The cathode of the driving power supply is connected with the positive electrode V of the driving power supplyccConnected to the first switching tube S1And the second diode D2Is connected to the cathode of the first diode D1And the second switch tube S2Is connected to the drain of the second diode D2And the second switching tube S2Are all connected to the negative pole V of the driving power supplyee；
The resonance inductor LrIs connected to the first switching tube S1The other end of the source electrode is connected with the second switch tube S2And the main power device M1Is connected to the gate of (a).
The first switch tube S1For resonant charging of SiC MOSFET gates, S1The on-time of which determines the resonant charging time of the resonant inductor and the SiC MOSFET input capacitor. The second switch tube S2The direct turn-off SiC MOSFET can realize the rapid turn-off of the SiC MOSFET.
The diode D1、D2A feedback loop of the resonant inductor current is provided, namely after resonant opening is completed, the residual energy in the resonant inductor is fed back to the driving power supply, and the driving loss is reduced. The first diode D1Can inhibit switch transient stateOvershoot of gate voltage in process, when gate voltage VgsWhen the voltage is greater than the positive polarity voltage of the driving power supply, the first diode D1Conducting to inhibit the overshoot of the gate voltage.
The embodiment of the invention also provides a control method based on the resonance drive circuit, which comprises the following specific steps:
as shown in fig. 4, the stages t0-t1 are resonant charging stages, the first switch tube S1 is controlled to be turned on, the second switch tube S2 is controlled to be turned off, the resonant inductor resonates with the gate input capacitor of the SiC MOSFET, and the resonant inductor current starts to rise. Its drive current igsIn a sinusoidal waveform, the gate voltage VgsThe rising speed is gradually increased to be high; at time t1, the inductor current reaches a maximum and the gate voltage reaches Vcc.
t1-t2 are feedback phases. When the gate voltage VgsIs charged to a voltage slightly higher than the driving power supply voltage VccWhen this occurs, the clamp diode D1 is turned on; the first switch tube S1 is turned off, and the resonant inductor current will be fed back to the driving power source through the second diode D2, the resonant inductor, and the first diode D1 due to the freewheeling function of the resonant inductor. And after the feedback process is finished, the resonance opening process is finished.
t3-t4 are hard turn-off phases. Controlling the second switch tube S2 to be conducted, the first switch tube S1 to be turned off, and rapidly discharging the SiC MOSFET grid input capacitor through the second switch tube S2 until the grid voltage is equal to the negative polarity voltage V of the driving power supply at the moment of t4eeAnd the rapid turn-off of the SiC MOSFET is realized. Its drive current igsThe waveform is RC discharge waveform, and the grid voltage VgsThe change is from fast to slow.
t4-t5 are active clamping stages. The second switch tube S2 is continuously turned on, and the gate voltage is clamped at Vee. The second switch tube S2 is turned off at time t5, and the next cycle of operation is started.
The control signals required by the first switch tube S1 and the second switch tube S2 are also shown in fig. 4: the pulse width of the control signal of the first switch tube S1 can be calculated by the resonance time required by the resonance inductor and the SiC MOSFET input capacitor
Figure BDA0002282796650000061
Wherein C isiss_sEquivalent input capacitance for SiC MOSFET
Figure BDA0002282796650000062
VdriveDifference V for driving power supply outputdrive＝Vcc-Vee，QgIs the total charge of the gate of the main power device. The pulse width of the first switch tube control signal can also be determined by dynamically detecting the gate voltage of the main power device: when the grid voltage reaches the positive voltage V of the driving power supplyccWhen the first switch tube is turned off, the first switch tube is turned off.
Fig. 5 and 6 are on and off waveforms of the resonant driving described above. The turn-on time is 40ns by adjusting the resonant inductance. The turn-off time is 20ns, which is 4 times the turn-off speed of the conventional drive (as shown in fig. 7).
Fig. 8 is a comparison of the losses of the resonant drive described above with that of a full bridge silicon device. The drive loss was measured using SiC mosfet 3M 0030090K. The loss of resonant drive of a full-bridge silicon device at 200kHz is 0.75W, and the loss of resonant drive is 0.39W, which is reduced by 48%.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (9)

1. A hybrid resonant driving circuit is characterized by comprising a hybrid bridge structure, a resonant inductor and a main power device;
the hybrid bridge structure comprises a first switch tube, a second switch tube, a first diode and a second diode, wherein a drain electrode of the first switch tube and a cathode of the first diode are connected with an anode of a driving power supply, a source electrode of the first switch tube is connected with a cathode of the second diode, an anode of the first diode is connected with a drain electrode of the second switch tube, and an anode of the second diode and a source electrode of the second switch tube are connected to a cathode of the driving power supply;
one end of the resonant inductor is connected to the source electrode of the first switching tube, and the other end of the resonant inductor is connected with the drain electrode of the second switching tube and the grid electrode of the main power device.
2. The hybrid resonant drive circuit of claim 1, wherein the first and second switching tubes are GaN HEMTs.
3. A hybrid resonant drive circuit as recited in claim 2, wherein the first switching transistor is configured to resonantly charge the gate of the main power device.
4. A hybrid resonant drive circuit as set forth in claim 2, wherein the second switching transistor is configured to turn off the main power device.
5. A hybrid resonant drive circuit as recited in claim 1, wherein the first diode, the second diode, and the resonant inductor form an energy feedback loop.
6. The method for controlling a hybrid resonant driving circuit according to claim 1, comprising the steps of:
controlling the first switching tube to be conducted and the second switching tube to be turned off, enabling the resonant inductor to resonate with the grid input capacitor of the main power device, and enabling the current of the resonant inductor to start to rise;
when the grid voltage is charged to be higher than the positive voltage V of the driving power supplyccWhen the driving circuit is used, the first diode is conducted, the first switching tube is turned off, and the current of the resonant inductor is fed back to the driving power supply through the second diode, the resonant inductor and the first diode;
after the feedback process is finished, the second switching tube is controlled to be switched on, the first switching tube is switched off, and the grid input capacitor of the main power device discharges through the second switching tube until the grid voltage is equal to the voltage V of the negative electrode of the driving power supplyee。
7. The control method of claim 6, wherein a resonant charging time of the resonant inductor and the input capacitor of the main power device is determined by an on-time of the first switch tube.
8. The control method of claim 7, wherein a pulse width of the first switching tube control signal is calculated by a resonance time of the resonance inductor and the main power device input capacitor
Figure FDA0002282796640000021
Wherein C isiss_sIs the equivalent input capacitance of the main power device
Figure FDA0002282796640000022
VdriveDifference V for driving power supply outputdrive＝Vcc-Vee，QgIs the total charge of the gate of the main power device.
9. The control method of claim 7, wherein a pulse width of the first switching tube control signal is determined by dynamically detecting a gate voltage of the main power device: when the grid voltage reaches the positive voltage V of the driving power supplyccAnd when the first switch tube is closed, the first switch tube is closed.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115313803A (en) * 2022-08-22 2022-11-08 天津大学 Resonance lossless driving circuit structure

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