CN111276495A - 阵列基板及其制备方法 - Google Patents
阵列基板及其制备方法 Download PDFInfo
- Publication number
- CN111276495A CN111276495A CN202010088951.4A CN202010088951A CN111276495A CN 111276495 A CN111276495 A CN 111276495A CN 202010088951 A CN202010088951 A CN 202010088951A CN 111276495 A CN111276495 A CN 111276495A
- Authority
- CN
- China
- Prior art keywords
- flexible substrate
- buffer
- wires
- traces
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title description 3
- 238000005452 bending Methods 0.000 claims abstract description 60
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 20
- 239000004973 liquid crystal related substance Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本揭示提供了一种阵列基板,其包含柔性基板。所述柔性基板包含显示区及位于显示区一侧的弯折区。弯折区设有数个第一走线、绝缘层、数个缓冲条、密封层及数个第二走线。数个第一走线间隔设置于柔性基板上。绝缘层覆盖柔性基板及数个第一走线,且在每一第一走线上设有凹槽。数个缓冲条分别装填于数个凹槽内。密封层覆盖绝缘层及缓冲条,以将缓冲条密封于每一凹槽中。数个第二走线间隔设置于密封层上。每一第二走线在柔性基板上的投影与每一第一走线在柔性基板上的投影重合。本揭示还提供一种制备前述阵列基板的方法。
Description
技术领域
本揭示涉及显示技术领域,更具体地说,涉及一种阵列基板及其制备方法。
背景技术
近年来,柔性显示面板通过将其绑定区弯折,来减小其下边框的宽度。更通过改进弯折区内的走线设计,来减小弯折区的面积,以进一步窄化下边框。然而,当弯折区的面积越小时,弯折区在其弯折時所具有的半径亦越小。因此,弯折区内的走线承受越大的应力,而易断裂,进而导致显示异常。
发明内容
为了解决弯折区在弯折时其走线因承受过大的应力而断裂的技术问题,本揭示提供了一种阵列基板。所述阵列基板包含一柔性基板。所述柔性基板包含一显示区及位于所述显示区一侧的一弯折区。所述显示区设有数个数据线。所述弯折区设有数个第一走线、一绝缘层、数个缓冲条、一密封层及数个第二走线。所述数个第一走线间隔设置在所述柔性基板上。所述绝缘层覆盖所述柔性基板及所述数个第一走线。所述绝缘层在每一第一走线上设有一凹槽。所述数个缓冲条分别设置于所述数个凹槽内。所述密封层覆盖所述绝缘层及所述数个缓冲条,以将所述数个缓冲条密封于数个凹槽中。所述数个第二走线间隔设置于所述密封层上。所述数个第二走线在所述柔性基板上的投影分别与所述数个第一走线在所述柔性基板上的投影重合。每一数据线电连接至所述数个第一走线或所述数个第二走线中的一者。
在一实施例中,所述弯折区还包含一缓冲层及一保护层。所述缓冲层覆盖所述数个第二走线及所述密封层。所述保护层覆盖所述缓冲层。
在一实施例中,所述缓冲条是由一液晶材料组成。
本揭示还提供一种阵列基板制备方法,其包括:提供一柔性基板,其中所述柔性基板包含一显示区及位于所述显示区一侧的一弯折区;间隔设置数个数据线于所述显示区内的柔性基板上;间隔设置数个第一走线于所述弯折区内的柔性基板上;形成一绝缘层,覆盖所述弯折区内的柔性基板及数个第一走线,其中所述绝缘层在每一第一走线上设有一凹槽;将一缓冲材料填满所述数个凹槽,以形成数个缓冲条;形成一密封层,覆盖所述绝缘层及所述数个缓冲条,以将所述数个缓冲条密封于所述数个凹槽中;及间隔设置数个第二走线在所述密封层上。所述数个第二走线在所述柔性基板上的投影分别与所述数个第一走线在所述柔性基板上的投影重合。每一数据线电连接至所述数个第一走线或所述数个第二走线中的一者。
在一实施例中,所述方法还包含:形成一缓冲层,覆盖于所述数个第二走线及所述密封层上;及形成一保护层,覆盖于所述缓冲层上。
在一实施例中,所述缓冲材料为液晶材料。
在一实施例中,每一缓冲条在所述柔性基板上的投影落入相邻的第一走线在所述柔性基板上的投影内。
在一实施例中,每一缓冲条与相邻的第一走线及第二走线相互平行。
本揭示所提供的阵列基板及其制备方法,通过在弯折区内的每一对相对设置的第一走线和第二走线之间设置一缓冲条,来缓释弯折区在弯折时第一走线和第二走线所承受的应力。借此,降低第一走线和第二走线断裂的风险。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例的阵列基板的示意图。
图2为图1的阵列基板沿A-A’线的截面示意图。
图3为图2的阵列基板沿B-B’线的截面示意图。
图4为图2的阵列基板沿C-C’线的截面示意图。
图5至图8为制备图1的弯折区的方法流程示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
请参阅图1,本揭示提供了一种阵列基板100。所述阵列基板100包含一柔性基板10。所述柔性基板10可由聚酰亚胺(polyimide,PI)、聚碳酸酯(polycarbonate,PC)、聚醚砜(polyether sulfone,PES)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)、及薄膜纤维增强聚合物(fiber-reinforced polymer,FRP)等柔性绝缘聚合物材料所制成。所述柔性基板10可为透明的、半透明的或不透明的。所述柔性基板10包含一显示区110及围绕所述显示区110的一非显示区120。所述非显示区120包含位于所述显示区110一侧的一扇形区121及一弯折区122。所述扇形区121位在所述显示区110及所述弯折区122之间。所述扇形区121及所述弯折区122之间具有一弯折线123。所述弯折区122可沿所述弯折线123向所述显示区110的下方弯折。
所述显示区110设有数个数据线111。具体地,所述显示区110设有一驱动电路层,其包含数个薄膜晶体管、数个扫描线及所述数个数据线111。所述数个扫描线及所述数个数据线111电连接于所述数个薄膜晶体管。所述数个数据线111是用于进行数据信号的传递。所述扇形区121及所述弯折区122设有横跨它们的数个金属走线130。所述数个金属走线130分别与所述数个数据线111电连接,用于传递数据信号。每一金属走线130与相对应的数据线111可为一体成形。
图1显示所述扇形区121内的数个金属走线130呈扇形分布,且所述弯折区122内的数个金属走线130呈相互平行的直线分布,但不限于此。在一实施例中,所述弯折区122内的数个金属走线130可呈扇形分布。在一实施例中,所述弯折区122内的数个金属走线130的分布可为一或多个扇形分布与一或多个直线分布的组合。
请参阅图2,在所述弯折区122内的数个金属走线130包含数个第一走线131及数个第二走线132。所述弯折区122的结构包含所述柔性基板10、一第一缓冲层20、所述数个第一走线131、一绝缘层40、数个缓冲条50、一密封层60、所述数个第二走线132、一第二缓冲层80及一保护层90。
所述第一缓冲层20覆盖于所述柔性基板10的弯折区122上。所述第一缓冲层20可由一柔软的有机材料组成,以用于缓释所述弯折区122所承受的应力,例如烷氧基铝(alucone)组成。所述第一缓冲层20亦可为铝、钛、锌、铁的有机-无机杂化膜。所述数个第一走线131间隔设置在所述第一缓冲层20上。所述绝缘层40覆盖所述第一缓冲层20及所述数个第一走线131。所述绝缘层40可由氮化硅、氧化硅或其组合所组成,但不限于此。
在一实施例中,可不设置所述第一缓冲层20,所述数个第一走线131直接间隔设置在所述柔性基板10的弯折区122上,且所述绝缘层40覆盖所述柔性基板10及所述数个第一走线131。
图2显示所述绝缘层40在每一第一走线131上设有两个凹槽41,但不限于此。所述绝缘层40可在每一第一走线131上设有一或多个凹槽41。所述数个缓冲条50分别设置于所述数个凹槽41内。每一缓冲条50在所述柔性基板10上的投影落入相邻的第一走线131在所述柔性基板10上的投影内。所述缓冲条50是由一缓冲材料所组成,且被建构成能缓释所述弯折区122在弯折时所产生的应力。所述缓冲材料可为能在所述数个凹槽41中自由流动的流动材料,例如液晶材料。较佳地,所述缓冲条50由一液晶材料组成。所述液晶材料可为向列型液晶(nematic)、层列型液晶(smectic)、胆固醇型(cholesteric)液晶或其组合。
所述密封层60覆盖所述绝缘层40及所述数个缓冲条50,以将所述数个缓冲条50密封于数个凹槽41中。所述密封层60可由氮化硅、氧化硅或其组合所组成,但不限于此。所述密封层60亦可由一有机材料组成,例如烷氧基铝(alucone)组成。所述密封层60亦可为铝、钛、锌、铁的有机-无机杂化膜。
所述数个第二走线132间隔设置于所述密封层60上。所述数个第二走线132在所述柔性基板10上的投影分别与所述数个第一走线131在所述柔性基板10上的投影重合。因此,每一对相对设置的第一走线131与第二走线132之间设有所述一或多个缓冲条50。
所述第二缓冲层80覆盖所述数个第二走线132及所述密封层60。所述第二缓冲层80可由一柔软的有机材料组成,以用于缓释所述弯折区122所承受的应力,例如烷氧基铝(alucone)组成。所述第二缓冲层80亦可为铝、钛、锌、铁的有机-无机杂化膜。所述第二缓冲层80的材料可与所述第一缓冲层20相同或不同。
所述保护层90覆盖所述第二缓冲层80,被建构成防止大气中的水气及氧气接触进入所述弯折区122的结构内。借此,防止水气及氧气接触并侵蚀所述数个第一走线131及所述数个第二走线132,或防止水气渗入所述数个数个缓冲条50而影响其缓释应力的功效。所述保护层90可由氧化铝、氧化硅、氧化镁或其组合所组成,但不限于此。
请参阅图3,每一缓冲条50与相邻的第一走线131及第二走线132相互平行。请参阅图4,在相邻的第一走线131之间的绝缘层40未设有凹槽41及缓冲条50。
请参阅图1及图2,每一数据线111电连接至所述数个第一走线131或所述数个第二走线132中的一者。所述扇形区121的结构可具有如同所述弯折区122的结构。所述扇形区121的结构亦可为其中所述数个金属走线130设置在同一平面的结构。
本揭示还提供一种制备前述阵列基板100的方法,其包括下列步骤。
首先,请参阅图1,提供一柔性基板10。所述柔性基板10包含一显示区110及围绕所述显示区110的一非显示区120。所述非显示区120包含位于所述显示区110一侧的一扇形区121及一弯折区122。所述扇形区121位在所述显示区110及所述弯折区122之间。所述扇形区121及所述弯折区122之间具有一弯折线123。所述弯折区122可沿所述弯折线123向所述显示区110的下方弯折。接着,间隔设置数个数据线111于所述显示区110内的柔性基板10上。接着,间隔设置横跨所述扇形区121及所述弯折区122的数个金属走线130。所述数个金属走线130分别与所述数个数据线111电连接。
图1显示所述扇形区121内的数个金属走线130呈扇形分布,且所述弯折区122内的数个金属走线130呈相互平行的直线分布,但不限于此。在一实施例中,所述弯折区122内的数个金属走线130可呈扇形分布。在一实施例中,所述弯折区122内的数个金属走线130的分布可为一或多个扇形分布与一或多个直线分布的组合。
请参阅图2,在所述弯折区122内的数个金属走线130包含数个第一走线131及数个第二走线132。所述弯折区122的结构包含所述柔性基板10、一第一缓冲层20、所述数个第一走线131、一绝缘层40、数个缓冲条50、一密封层60、所述数个第二走线132、一第二缓冲层80及一保护层90。所述弯折区122的制备方法包含下列步骤。
步骤1:请参阅图5,形成所述第一缓冲层20,覆盖于所述柔性基板10的弯折区122上。
步骤2:请参阅图5,间隔设置数个第一走线131于所述第一缓冲层20上。
步骤3:请参阅图6,形成一绝缘层40,覆盖于所述第一缓冲层20及所述数个第一走线131上。
在一实施例中,可不设置所述第一缓冲层20,所述数个第一走线131直接间隔设置在所述柔性基板10的弯折区122上,且所述绝缘层40覆盖所述柔性基板10及所述数个第一走线131。
步骤4:请参阅图6,蚀刻绝缘层40,以在每一第一走线131上形成一或多个凹槽40。每一凹槽40的底部可为相对应的第一走线131。图2显示所述绝缘层40在每一第一走线131上设有两个凹槽41,但不限于此。所述绝缘层40可在每一第一走线131上设有一或多个凹槽41。在相邻的第一走线131之间的绝缘层40未设有凹槽41。
步骤5:请参阅图7,将一缓冲材料填满所述数个凹槽41,以形成数个缓冲条50。亦即,在每一第一走线131上形成有一或多个缓冲条50,而在相邻的第一走线131之间未设有缓冲条50。每一缓冲条50与相邻的第一走线131平行。每一缓冲条50在所述柔性基板10上的投影落入相邻的第一走线131在所述柔性基板10上的投影内。所述缓冲条50被建构成能缓释所述弯折区122在弯折时所产生的应力。所述缓冲材料可为能在所述凹槽中自由流动的流动材料,例如液晶材料。
步骤6:请参阅图7,形成一密封层60,覆盖于所述绝缘层40及所述数个缓冲条50上,以将所述数个缓冲条50密封于所述数个凹槽41中。
步骤7:请参阅图7,间隔设置数个第二走线132在所述密封层60上。所述数个第二走线132分别与所述数个第一走线131平行。所述数个第二走线132在所述柔性基板10上的投影分别与所述数个第一走线131在所述柔性基板10上的投影重合。因此,所述一或多个缓冲条50是位在每一对相对设置的第一走线131与第二走线132之间。每一缓冲条50与相邻的第一走线131及第二走线132相互平行。
步骤8:请参阅图8,形成一第二缓冲层80,覆盖于所述数个第二走线132及所述密封层60上
步骤9:请参阅图8,形成一保护层90,覆盖于所述第二缓冲层80上。所述保护层90被建构成防止大气中的水气及氧气接触进入所述弯折区122的结构内。借此,防止水气及氧气接触并侵蚀所述数个第一走线131及所述数个第二走线132,或防止水气渗入所述数个数个缓冲条50而影响其缓释应力的功效。
请参阅图1及图8,每一数据线111电连接至所述数个第一走线131或所述数个第二走线132中的一者。所述扇形区121的结构可具有如同所述弯折区122的结构,因此所述扇形区121的制备方法可与所述弯折区122的制备方法相同。
所述柔性基板10、第一缓冲层20、绝缘层40、缓冲条50、密封层60、第二缓冲层80及保护层90的材料如前所述,在此不再详细说明。
本揭示所提供的阵列基板100及其制备方法,通过在弯折区122内的每一对相对设置的第一走线131和第二走线132之间设置一或多个缓冲条50,来缓释弯折区122在弯折时第一走线131和第二走线132所承受的应力。借此,降低第一走线131和第二走线132断裂的风险。此外,本揭示所提供的阵列基板100及其制备方法可分别应用于任一种柔性显示装置及其制备方法中。
综上所述,虽然本申请已将优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种阵列基板,其特征在于,其包含:一柔性基板,所述柔性基板包含:
一显示区,设有数个数据线;及
一弯折区,位在所述显示区的一侧,设有:
数个第一走线,间隔设置在所述柔性基板上;
一绝缘层,覆盖所述柔性基板及所述数个第一走线,且在每一第一走线上设有一凹槽;
数个缓冲条,分别设置于所述数个凹槽内;
一密封层,覆盖所述绝缘层及所述缓冲条,以将所述数个缓冲条密封于数个凹槽中;及
数个第二走线,间隔设置在所述密封层上,其中所述数个第二走线在所述柔性基板上的投影分别与所述数个第一走线在所述柔性基板上的投影重合,且每一数据线电连接至所述
数个第一走线或所述数个第二走线中的一者。
2.根据权利要求1所述的阵列基板,其特征在于,每一缓冲条在所述柔性基板上的投影落入相邻的第一走线在所述柔性基板上的投影内。
3.根据权利要求2所述的阵列基板,其特征在于,每一缓冲条与相邻的第一走线及第二走线相互平行。
4.根据权利要求3所述的阵列基板,其特征在于,所述缓冲条是由一液晶材料组成。
5.根据权利要求1所述的阵列基板,其特征在于,所述弯折区还包含:
一缓冲层,覆盖所述数个第二走线及所述密封层;及
一保护层,覆盖所述缓冲层。
6.一种阵列基板制备方法,其特征在于,其包含:
提供一柔性基板,其中所述柔性基板包含一显示区及位于所述显示区一侧的一弯折区;
间隔设置数个数据线于所述显示区内的柔性基板上;
间隔设置数个第一走线于所述弯折区内的柔性基板上;
形成一绝缘层,覆盖所述弯折区内的柔性基板及数个第一走线,其中所述绝缘层在每一第一走线上设有一凹槽;
将一缓冲材料填满所述数个凹槽,以形成数个缓冲条;
形成一密封层,覆盖所述绝缘层及所述数个缓冲条,以将所述数个缓冲条密封于所述数个凹槽中;及
间隔设置数个第二走线在所述密封层上,其中所述数个第二走线在所述柔性基板上的投影分别与所述数个第一走线在所述柔性基板上的投影重合,且每一数据线电连接至所述数个第一走线或所述数个第二走线中的一者。
7.根据权利要求6所述的阵列基板制备方法,其特征在于,每一缓冲条在所述柔性基板上的投影落入相邻的第一走线在所述柔性基板上的投影内。
8.根据权利要求7所述的阵列基板制备方法,其特征在于,每一缓冲条与相邻的第一走线及第二走线相互平行。
9.根据权利要求6所述的阵列基板制备方法,其特征在于,所述缓冲材料为一液晶材料。
10.根据权利要求6所述的阵列基板制备方法,其特征在于,其还包含:
形成一缓冲层,覆盖所述数个第二走线及所述密封层;及
形成一保护层,覆盖所述缓冲层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010088951.4A CN111276495B (zh) | 2020-02-12 | 2020-02-12 | 阵列基板及其制备方法 |
US16/758,708 US11302720B2 (en) | 2020-02-12 | 2020-03-16 | Array substrate and method for fabricating same |
PCT/CN2020/079451 WO2021159576A1 (zh) | 2020-02-12 | 2020-03-16 | 阵列基板及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010088951.4A CN111276495B (zh) | 2020-02-12 | 2020-02-12 | 阵列基板及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111276495A true CN111276495A (zh) | 2020-06-12 |
CN111276495B CN111276495B (zh) | 2022-06-07 |
Family
ID=71002168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010088951.4A Active CN111276495B (zh) | 2020-02-12 | 2020-02-12 | 阵列基板及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11302720B2 (zh) |
CN (1) | CN111276495B (zh) |
WO (1) | WO2021159576A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640881A (zh) * | 2020-06-17 | 2020-09-08 | 昆山国显光电有限公司 | 阵列基板及其制备方法 |
CN113867029A (zh) * | 2021-10-12 | 2021-12-31 | 合肥维信诺科技有限公司 | 阵列模组及其制备方法和显示面板 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205140985U (zh) * | 2015-10-22 | 2016-04-06 | 信利(惠州)智能显示有限公司 | 一种柔性amoled显示面板结构 |
CN106205394A (zh) * | 2016-09-05 | 2016-12-07 | 京东方科技集团股份有限公司 | 一种柔性显示面板、显示装置及制作方法 |
CN107910336A (zh) * | 2017-11-30 | 2018-04-13 | 昆山国显光电有限公司 | 阵列基板及其制造方法及显示屏 |
CN107946317A (zh) * | 2017-11-20 | 2018-04-20 | 京东方科技集团股份有限公司 | 一种柔性阵列基板及制备方法、显示基板、显示装置 |
CN108231800A (zh) * | 2018-02-02 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其制备方法、显示装置 |
CN108461531A (zh) * | 2018-04-09 | 2018-08-28 | 京东方科技集团股份有限公司 | 柔性阵列基板及其制备方法和柔性显示面板 |
CN208077978U (zh) * | 2017-02-03 | 2018-11-09 | 株式会社日本显示器 | 显示装置 |
CN208208203U (zh) * | 2018-06-06 | 2018-12-07 | 上海和辉光电有限公司 | 一种柔性显示面板及显示装置 |
CN108986672A (zh) * | 2018-09-29 | 2018-12-11 | 武汉华星光电技术有限公司 | 显示面板、显示模组及电子装置 |
CN109449169A (zh) * | 2018-12-06 | 2019-03-08 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN109461835A (zh) * | 2018-09-28 | 2019-03-12 | 云谷(固安)科技有限公司 | 柔性显示面板及其制作方法、显示装置 |
CN109545801A (zh) * | 2018-12-12 | 2019-03-29 | 昆山国显光电有限公司 | 一种显示面板和显示装置 |
CN109560088A (zh) * | 2018-12-19 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | 柔性显示基板及其制作方法 |
CN109671745A (zh) * | 2018-12-11 | 2019-04-23 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN110071124A (zh) * | 2019-04-22 | 2019-07-30 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107634086B (zh) * | 2017-09-15 | 2020-03-03 | 京东方科技集团股份有限公司 | 一种柔性阵列基板及制备方法、显示装置 |
KR102599507B1 (ko) * | 2018-09-17 | 2023-11-09 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20200066504A (ko) * | 2018-11-30 | 2020-06-10 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102573919B1 (ko) * | 2018-12-05 | 2023-09-04 | 엘지디스플레이 주식회사 | 표시 장치 |
KR102568299B1 (ko) * | 2018-12-20 | 2023-08-17 | 엘지디스플레이 주식회사 | 전계 발광 표시 장치 |
CN109920332B (zh) * | 2019-02-28 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | 柔性阵列基板、其制备方法及显示面板 |
-
2020
- 2020-02-12 CN CN202010088951.4A patent/CN111276495B/zh active Active
- 2020-03-16 WO PCT/CN2020/079451 patent/WO2021159576A1/zh active Application Filing
- 2020-03-16 US US16/758,708 patent/US11302720B2/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205140985U (zh) * | 2015-10-22 | 2016-04-06 | 信利(惠州)智能显示有限公司 | 一种柔性amoled显示面板结构 |
CN106205394A (zh) * | 2016-09-05 | 2016-12-07 | 京东方科技集团股份有限公司 | 一种柔性显示面板、显示装置及制作方法 |
CN208077978U (zh) * | 2017-02-03 | 2018-11-09 | 株式会社日本显示器 | 显示装置 |
CN107946317A (zh) * | 2017-11-20 | 2018-04-20 | 京东方科技集团股份有限公司 | 一种柔性阵列基板及制备方法、显示基板、显示装置 |
CN107910336A (zh) * | 2017-11-30 | 2018-04-13 | 昆山国显光电有限公司 | 阵列基板及其制造方法及显示屏 |
CN108231800A (zh) * | 2018-02-02 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其制备方法、显示装置 |
CN108461531A (zh) * | 2018-04-09 | 2018-08-28 | 京东方科技集团股份有限公司 | 柔性阵列基板及其制备方法和柔性显示面板 |
CN208208203U (zh) * | 2018-06-06 | 2018-12-07 | 上海和辉光电有限公司 | 一种柔性显示面板及显示装置 |
CN109461835A (zh) * | 2018-09-28 | 2019-03-12 | 云谷(固安)科技有限公司 | 柔性显示面板及其制作方法、显示装置 |
CN108986672A (zh) * | 2018-09-29 | 2018-12-11 | 武汉华星光电技术有限公司 | 显示面板、显示模组及电子装置 |
CN109449169A (zh) * | 2018-12-06 | 2019-03-08 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN109671745A (zh) * | 2018-12-11 | 2019-04-23 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN109545801A (zh) * | 2018-12-12 | 2019-03-29 | 昆山国显光电有限公司 | 一种显示面板和显示装置 |
CN109560088A (zh) * | 2018-12-19 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | 柔性显示基板及其制作方法 |
CN110071124A (zh) * | 2019-04-22 | 2019-07-30 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640881A (zh) * | 2020-06-17 | 2020-09-08 | 昆山国显光电有限公司 | 阵列基板及其制备方法 |
CN113867029A (zh) * | 2021-10-12 | 2021-12-31 | 合肥维信诺科技有限公司 | 阵列模组及其制备方法和显示面板 |
CN113867029B (zh) * | 2021-10-12 | 2024-07-02 | 合肥维信诺科技有限公司 | 阵列模组及其制备方法和显示面板 |
Also Published As
Publication number | Publication date |
---|---|
WO2021159576A1 (zh) | 2021-08-19 |
US11302720B2 (en) | 2022-04-12 |
CN111276495B (zh) | 2022-06-07 |
US20210408054A1 (en) | 2021-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111276495B (zh) | 阵列基板及其制备方法 | |
JP4251129B2 (ja) | 実装構造体、電気光学装置及び電子機器 | |
CN110085649B (zh) | 显示面板及显示装置 | |
GB2542503B (en) | Display device | |
US9269650B2 (en) | Chip-on-film package and display device including the same | |
US11869403B2 (en) | Display devices | |
US10083994B2 (en) | Flexible display panel and display device | |
EP2397891B1 (en) | Tft array substrate, and liquid crystal display panel | |
CN111665654B (zh) | 显示装置 | |
KR102315671B1 (ko) | 표시 장치 | |
CN104732908A (zh) | 显示面板 | |
CN106293252B (zh) | 阵列基板及显示装置 | |
CN104465604A (zh) | 覆晶薄膜封装以及包括其的覆晶薄膜封装阵列和显示装置 | |
CN102662276A (zh) | 一种液晶显示面板 | |
CN106898623B (zh) | 一种阵列基板和显示装置 | |
TWI391731B (zh) | 平面顯示器面板 | |
CN210403730U (zh) | 显示面板及阵列基板 | |
KR100265571B1 (ko) | 액정 표시 장치 | |
JP5018407B2 (ja) | 液晶パネル | |
US10546537B2 (en) | Display device with display drivers arranged on edge thereof | |
KR102421430B1 (ko) | 표시장치 | |
KR102228520B1 (ko) | 표시장치 | |
KR102287970B1 (ko) | 표시장치 | |
US20240063354A1 (en) | Display device | |
CN108020966B (zh) | 显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |