CN111243969B - 半导体装置的制造方法、半导体装置、电力变换装置 - Google Patents

半导体装置的制造方法、半导体装置、电力变换装置 Download PDF

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CN111243969B
CN111243969B CN201911156210.9A CN201911156210A CN111243969B CN 111243969 B CN111243969 B CN 111243969B CN 201911156210 A CN201911156210 A CN 201911156210A CN 111243969 B CN111243969 B CN 111243969B
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semiconductor device
case
lattice
temperature
housing
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CN111243969A (zh
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中原贤太
白尾明稔
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供适合于缩短半导体装置的制造所需的时间的半导体装置的制造方法、半导体装置及电力变换装置。具有以下工序：向壳体中提供半导体芯片、端子、具有金属图案的绝缘基板以及涂敷于该半导体芯片的烧结材料；提供由设置于该壳体中的格子进行支撑的颗粒状的多个封装树脂；通过将该壳体的内部加热至比室温高的第1温度，从而气化后的该烧结材料的溶剂从该格子的间隙和该多个封装树脂的间隙向该壳体之外排出；以及通过将该壳体的内部加热至比该第1温度高的第2温度，从而熔化后的该多个封装树脂穿过该格子的间隙而成为覆盖该半导体芯片的树脂层。

Description

半导体装置的制造方法、半导体装置、电力变换装置
技术领域
本发明涉及半导体装置的制造方法、半导体装置及电力变换装置。
背景技术
在专利文献1中公开了一种半导体功率模块，其具有：耐热壳体；绝缘配线基板，其安装有功率半导体装置；散热器，其与绝缘配线基板接触，对在该绝缘配线基板产生的热进行散热；以及耐热硅凝胶，其被填充在耐热壳体内，该半导体功率模块还具有面内应力缓和体，该面内应力缓和体配置于耐热壳体内的侧壁附近，并且埋设于耐热硅凝胶内部，在耐热硅凝胶的固化时防止该耐热硅凝胶从侧壁脱离。
专利文献1：日本特开2015-220238号公报
例如，在制造功率模块等半导体装置的情况下，在各工序中，为了将半成品向半导体制造装置投入、从半导体制造装置取出，需要半成品的频繁移动。例如，进行以下工序，即，为了将半导体芯片与端子或金属图案通过焊料进行连接，通过加热装置对半成品进行加热，然后，将半成品从加热装置取出、冷却，提供封装树脂的材料，再次通过加热装置对半成品进行加热而将封装树脂熔化。这样，作为一个例子，如果需要对制造中途的半成品追加封装树脂等部件，则必须在升温之后进行冷却、而后再次升温，无法缩短半导体装置的制造所需的时间。
发明内容
本发明就是为了解决上述这样的课题而提出的，其目的在于提供适合于缩短半导体装置的制造所需的时间的半导体装置的制造方法、半导体装置以及电力变换装置。
本发明涉及的半导体装置的制造方法的特征在于，具有以下工序：向壳体中提供半导体芯片、端子、具有金属图案的绝缘基板以及涂敷于该半导体芯片的烧结材料；提供由设置于该壳体中的格子进行支撑的颗粒状的多个封装树脂；通过将该壳体的内部加热至比室温高的第1温度，从而气化后的该烧结材料的溶剂从该格子的间隙和该多个封装树脂的间隙向该壳体之外排出；以及通过将该壳体的内部加热至比该第1温度高的第2温度，从而熔化后的该多个封装树脂穿过该格子的间隙而成为覆盖该半导体芯片的树脂层。
本发明的其它特征在以下得以明确。
发明的效果
根据本发明，通过在壳体内设置格子，在该格子之上设置封装树脂，从而能够连续处理部件间的接合处理和封装树脂的熔解，因而适于缩短半导体装置的制造所需的时间。
附图说明
图1是实施方式1涉及的制造中途的半导体装置的剖视斜视图。
图2是提供了封装树脂之后的半导体装置的剖视图。
图3是封装树脂熔解之后的半导体装置的剖视图。
图4是实施方式2涉及的制造中途的半导体装置的剖视斜视图。
图5是提供了2种封装树脂之后的半导体装置的剖视图。
图6是2种封装树脂熔解之后的半导体装置的剖视图。
图7是表示实施方式3涉及的格子的结构例的俯视图。
图8是表示实施方式4涉及的格子的结构例的俯视图
图9是装入了图8的格子后的半导体装置的剖视斜视图。
图10是实施方式5涉及的电力变换***的框图。
标号的说明
10半导体装置，12绝缘基板，14接合材料，16半导体芯片，18A烧结材料，20、22、24端子，30壳体，40封装树脂，40'树脂层，40A封装树脂，40B辅助封装树脂，50上部格子，40A'树脂层，40B'辅助树脂层，32A绝缘体部分，32B金属部分。
具体实施方式
参照附图，对本发明的实施方式涉及的半导体装置的制造方法、半导体装置及电力变换装置进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
参照图1-3，对实施方式1涉及的半导体装置的制造方法进行说明。图1是制造中途的半导体装置的剖视斜视图。首先，在绝缘基板12的金属图案12c固定半导体芯片16。例如，在金属图案12c之上设置以Ag或Cu等烧结材料、或焊料为材料的接合材料14，通过该接合材料14而将半导体芯片16固定于金属图案12c。绝缘基板12例如具有：金属基座板12a；绝缘层12b，其形成于金属基座板12a之上；以及金属图案12c，其形成于绝缘层12b之上。
接着，将绝缘基板12固定于壳体30。壳体30例如是具有四个侧面的围挡。在该壳体30的内壁或下端固定绝缘基板12。固定的方法例如为粘接剂或机械嵌合。能够在壳体30预先固定有格子32。格子32可以在壳体30中的半导体芯片16的上方与绝缘基板12相对地设置。
根据一个例子，能够使格子32和半导体芯片16平行。也可以作为壳体30的一部分而提供格子32。在这种情况下，壳体30和格子32是一体的，两者的材料一致。例如，如果壳体30是树脂，则格子32也是树脂。也能够将格子32作为与壳体30不同的部件而提供。在这种情况下，能够将格子32的全部端部或一部分端部例如通过粘接剂而固定于壳体30的内壁。也可以在壳体30的内壁形成沿z方向延伸的槽，将格子32嵌合于该槽。在图1中，用虚线假想地例示了这样的槽30a。
槽30a至少形成于壳体30的一个内壁即可。
在绝缘基板12向壳体30的固定之前或在该固定之后，向半导体芯片16之上的配线位置涂敷Ag或Cu等烧结材料18A。同时，在金属图案12c之上也涂敷烧结材料18B、18C、18D。这些烧结材料例如是以Ag或Cu等为材料的烧结接合用膏。也可以利用除了Ag或Cu以外的材料的烧结材料。根据一个例子，可以通过向与格子32接触地作为壳体30的一部分而设置的圆筒部30A中提供烧结材料的方法，从而提供烧结材料18A、18B、18C、18D中的至少1个。通过使由例如Cu等金属形成的端子20、22、24与烧结材料18A、18B、18C、18D接触，从而形成电路配线。
通过上述各处理，向壳体30中提供半导体芯片16、端子20、22、24、具有金属图案12c的绝缘基板12以及涂敷于半导体芯片16的烧结材料18A。到此为止的各处理可以说主要以形成电路配线为目的。
接着，将颗粒状的多个封装树脂投入到壳体30内。图2示出颗粒状的封装树脂40，是半导体装置的剖视图。多个封装树脂40的形状没有特别限定。但是，多个封装树脂40具有比格子32的开口部大而不会落入格子32之下的程度的大小。因此，如果从z正方向向壳体30中提供多个封装树脂40，则多个封装树脂40由设置于壳体30中的格子32支撑。
接着，将上述半导体装置的半成品投入到烤炉或回流炉这样的高温处理装置，在高温下进行热处理，由此进行烧结材料18A、18B、18C、18D的烧结处理和多个封装树脂40的固化处理。例如，使半导体装置的温度无级或阶段性地上升，使烧结材料18A、18B、18C、18D所使用的溶剂气化。此时，气化后的烧结材料的溶剂从格子32的间隙和多个封装树脂40的间隙向壳体30之外排出。就图2的例子而言，气化后的溶剂向z正方向上升，由此向壳体30之外排出。这样的溶剂的气化以及气化后的溶剂的排气是通过将壳体30的内部加热至比室温高的第1温度而产生的。通过该烧结处理，端子20被固定于金属图案12c，端子22被固定于半导体芯片16和金属图案12c，端子24被固定于金属图案12c。由此，溶剂消失。在壳体30的内部为第1温度的状态下，不会发生多个封装树脂40的明显的熔解。根据一个例子，烧结材料18A、18B、18C、18D所使用的溶剂气化的温度为100℃，可以将第1温度设为从100℃至150℃的温度。
接着，通过将壳体30的内部加热至比第1温度高的第2温度，从而使多个封装树脂40熔化。可以将第2温度设为例如从170℃至250℃的温度。图3是树脂封装后的半导体装置的剖视图。熔化后的多个封装树脂40穿过格子32的间隙而成为覆盖半导体芯片16的树脂层40'。换言之，熔解后的封装树脂40从壳体30的格子32向下方流出，向绝缘基板12的整体扩展之后开始固化，完成由树脂层40'实现的封装树脂的形成以及固化。
这样，通过一系列的升温工艺，完成烧结处理和封装树脂的形成及固化。通过烧结材料18A、18B、18C、18D所使用的溶剂气化而产生的气体从格子32的间隙和颗粒状的多个封装树脂40的间隙向外部排出，因而能够抑制在树脂层40'中产生孔洞。为了得到该效果，以在烧结材料18A、18B、18C、18D的溶剂气化的温度下多个封装树脂40不会发生明显的变形的方式选择多个封装树脂40的材料。根据一个例子，在溶剂气化之后，多个封装树脂40熔化而开始流动，由此开始树脂封装的处理，最终通过由树脂层40'将壳体30的内部整体封装而完成组装。
例如，由于烧结材料18A、18B、18C、18D的烧结温度大于或等于200℃，因此能够使多个封装树脂40的玻璃化转变温度Tg随之上升。另外，在多个封装树脂40即将流出之前，通过将容纳有半导体装置的腔室内设为真空气氛，从而能够降低树脂层40'内的空隙。换言之，在将壳体30中加热至第2温度时，将壳体30的周围的气氛设为比大气压低的压力，这有助于减少树脂层40'的孔洞。可以使上述一系列的加热处理在比大气压低的压力下进行，也可以在真空状态下进行。
经由第1温度而升温至第2温度的升温序列可以考虑烧结的进行程度和封装树脂的熔解程度而决定。例如，在将壳体30的内部加热至第1温度之后，不对壳体30的内部进行冷却而是将壳体30的内部加热至第2温度，这有助于处理的简化。根据实施方式1涉及的半导体装置的制造方法，能够通过简化后的工序而提供可靠性高的半导体装置。
实施方式1涉及的半导体装置在不失去其特征的范围内能够进行各种变形。例如，也可以只设置以下两者中的任一者，即：将半导体芯片16和端子22接合的烧结材料18A；以及将金属图案12c和端子20、22、24接合的烧结材料18B、18C、18D。即，设置烧结材料的位置没有特别限定。烧结材料用于壳体内的任意部件的接合。格子32可以通过粘接剂而固定于壳体30，也可以嵌合于壳体30。
以下的实施方式涉及的半导体装置的制造方法和半导体装置与实施方式1的共通点多，因而以与实施方式1的不同点为中心进行说明。
实施方式2.
图4-6是表示实施方式2涉及的半导体装置的制造方法的图。向实施方式2涉及的半导体装置提供上部格子50。上部格子50设置于壳体30中的格子32之上。上部格子50的向壳体30的内壁的固定可以通过粘合剂或嵌合而实现。根据一个例子，由上部格子50提供的开口大于由格子32提供的开口。格子32能够支撑较小的封装树脂，与此相对，上部格子50的开口大，因而无法支撑小的封装树脂，而能够保持较大的封装树脂。
图5示出向壳体中提供了2种封装树脂这一情况，是半导体装置的剖视图。在实施方式2涉及的半导体装置的制造方法中，如果从z正方向向壳体30中提供多个封装树脂40A，则多个封装树脂40A穿过上部格子50，与格子32接触而由格子32支撑。然后，从z正方向向壳体30中提供多个辅助封装树脂40B。多个辅助封装树脂40B比多个封装树脂40A大，由上部格子50支撑。根据一个例子，多个辅助封装树脂40B可以设为与多个封装树脂40A相比熔点高的颗粒状的物体。这样，提供由格子32支撑的多个封装树脂40A和由上部格子50支撑的辅助封装树脂40B。根据一个例子，多个封装树脂40A的熔点可以设为150℃，多个辅助封装树脂40B的熔点可以设为175℃。另外，多个辅助封装树脂40B可以设为与多个封装树脂40A相比难以吸湿的树脂。换言之，多个辅助封装树脂40B与多个封装树脂40A相比吸水率低。树脂的熔点以及吸水率等物理性质可以通过例如将多个辅助封装树脂40B和多个封装树脂40A的材料设为环氧树脂，调整环氧类树脂的成分而设为任意值。对于除了实施方式2以外的树脂，也可以使用环氧类树脂。
接着，进行热处理。图5是热处理前的半导体装置的剖视图，图6是热处理后的半导体装置的剖视图。首先，如上所述，通过将壳体的内部升温至第1温度而执行烧结处理。第1温度例如小于150℃。此时，封装树脂40A和辅助封装树脂40B没有明显的熔解。然后，不对壳体30的内部进行冷却而是将壳体30的内部升温至第2温度，由此使封装树脂40A熔解。第2温度例如大于或等于150℃且小于175℃。如此，形成图6所示的树脂层40A'。根据另一个例子，也可以将第2温度设为170℃至小于180℃，使封装树脂40A的熔点落在该温度范围。第2温度可以设为使封装树脂40A熔解的任意的温度。
在将壳体30的内部加热至第2温度之后，将壳体30的内部加热至比第2温度高的第3温度，由此使多个辅助封装树脂40B熔化。第3温度例如大于或等于175℃且小于或等于250℃。根据另一个例子，第3温度可以设为例如180℃至250℃的温度而使多个辅助封装树脂40B的熔点落在该温度范围。熔化后的多个辅助封装树脂40B穿过上部格子50的间隙和格子32的间隙，成为树脂层40A'之上的辅助树脂层40B'。如此，能够由物理性质不同的树脂层40A'和辅助树脂层40B'实现壳体内部的树脂封装。多个辅助封装树脂40B与多个封装树脂40A相比吸水率低，因而通过使吸水率低的辅助树脂层40B'位于表面，从而能够提高装置的耐湿性。
在将壳体30中的温度加热至第3温度时，将壳体30的周围的气氛设为比大气压低的压力，这有助于减少树脂层40A'和辅助树脂层40B'中的至少一者的孔洞。另外，在将壳体30的内部加热至第2温度之后，不对壳体30的内部进行冷却而是将壳体30的内部加热至第3温度，这使得处理加快。
根据构成功率模块的半导体装置的种类而进行材料不同的2种封装树脂的注入以及固化，由此能够提高该装置的可靠性。但是，为了将树脂层设为2层，通常认为，需要比形成1层树脂层更长的时间。但是，在实施方式2涉及的半导体装置的制造方法中，如上所述，通过将2层构造的格子设置于壳体30内，向格子的各层投入封装树脂，从而能够通过一系列的升温处理而容易地形成2层的树脂层。通过增加格子的数量，还能够形成大于或等于3层的树脂层。
通过使上部格子50的间隙比格子32的间隙大，从而能够使小的封装树脂由格子32支撑，使大的封装树脂由上部格子50支撑。小的封装树脂设为通过上部格子50而由格子32支撑的大小，大的封装树脂设为由上部格子50支撑的大小。在实施方式2中，使多个辅助封装树脂40B比多个封装树脂40A大。但是，也可以省略上部格子50，在提供了多个封装树脂40A之后，向它们之上提供多个辅助封装树脂40B。在这种情况下，只要以在升温过程中多个封装树脂40A先熔化、多个辅助封装树脂40B后熔化的方式选择两者的材料，则也能够提供2层封装树脂。
实施方式3.
就实施方式3涉及的半导体装置的制造方法和半导体装置而言，使壳体和格子为不同部件。图7是表示实施方式3涉及的格子32的结构例的俯视图。在格子32例如为了使端子通过而设置多个断线部32a、32b、32c、32d。断线部的大小和位置是根据制品的规格而决定的。这样的格子32能够在将多个树脂向壳体中提供之前，装入至壳体30。例如，可以在将绝缘基板12固定于壳体30之后，将格子32装入于壳体30，投入树脂。使壳体和格子为不同部件这一做法能够提供与树脂的物理性质、功率模块内部的形状、或端子的配置对应的最佳的格子。
实施方式4.
图8是表示实施方式4涉及的半导体装置所使用的格子32的结构例的俯视图。该格子32具有绝缘体部分32A和金属部分32B。金属部分32B能够用作用于进行功率模块的电配线的配线图案。
图9是具有图8的格子32的半导体装置的结构例的剖视斜视图。格子32固定于壳体30的内壁。金属部分32B直接或经由导电材料与端子22A、22B接触。金属部分32B将端子22A和端子22B电连接。金属部分32B作为配线用图案而起作用，因而无需变更壳体30的形状即可应对根据品种而不同的配线布局。
更详细地进行说明。在展现出使壳体的外形统一，并且具有不同的电压或电流容量的多个功率模块的情况下，根据规格而需要不同的配线。作为配线，可以使用金属导线。在设想为流过大电流时，可以使用例如铜材的金属框来代替金属导线。在将金属框装入至壳体的情况下，根据品种而需要不同形状的壳体，需要与品种的数量对应的壳体生产用模具。例如，仅仅是半导体芯片相对于绝缘基板的位置改变，就需要变更配线布局，需要新的壳体。
因此，在实施方式4中，在将壳体30和绝缘基板12组合后，向壳体30的内部装入具有作为配线起作用的金属部分32B的格子32。通过将金属部分32B用作配线，从而能够减少配线变更的麻烦，降低整体的产品成本。特别地，作为一个例子，如果能够使作为金属框的端子简易化，则设计的自由度进一步提高。金属框可以与格子一体化，也可以与格子进行组合。
到此为止所说明的各实施方式涉及的半导体装置的制造方法和半导体装置的特征也可以进行组合。例如，在设置多级格子的结构中，也可以使格子的一部分为金属部分，将该金属部分用作配线。
实施方式5.
本实施方式是将上述实施方式1至4所涉及的半导体装置应用于电力变换装置。该电力变换装置并不限定于特定的电力变换装置，但以下，作为实施方式5，对将上述实施方式1至4所涉及的半导体装置应用于三相逆变器的情况进行说明。
图10是表示电力变换***的结构的框图，在该电力变换***中应用了本实施方式涉及的电力变换装置。
图10所示的电力变换***由电源100、电力变换装置200、负载300构成。电源100是直流电源，向电力变换装置200供给直流电力。电源100可以由各种电源构成，例如，可以由直流***、太阳能电池、蓄电池构成，也可以由与交流***连接的整流电路或AC/DC转换器构成。另外，也可以将电源100设为由将从直流***输出的直流电力变换为预先确定的电力的DC/DC转换器构成。
电力变换装置200是连接在电源100和负载300之间的三相逆变器，将从电源100供给的直流电力变换为交流电力，向负载300供给交流电力。电力变换装置200如图10所示，具有：主变换电路201，其将直流电力变换为交流电力而输出；以及控制电路203，其将对主变换电路201进行控制的控制信号向主变换电路201输出。
负载300是由从电力变换装置200供给的交流电力进行驱动的三相电动机。此外，负载300不限于特定的用途，是搭载于各种电气设备的电动机，例如，用作面向混合动力汽车、电动汽车、铁路车辆、电梯或空调设备的电动机。
以下，对电力变换装置200的详细情况进行说明。主变换电路201具有开关元件和续流二极管(未图示)，通过开关元件的通断，从而将从电源100供给的直流电力变换为交流电力，向负载300供给。主变换电路201的具体的电路结构存在各种结构，但本实施方式涉及的主变换电路201是两电平的三相全桥电路，能够由6个开关元件和与各个开关元件反向并联的6个续流二极管构成。向主变换电路201的各开关元件和各续流二极管的至少一者应用与上述实施方式1至4中的任意者相当的半导体装置。6个开关元件两个两个地串联连接而构成上下桥臂，各上下桥臂构成全桥电路的各相(U相、V相、W相)。并且，各上下桥臂的输出端子即主变换电路201的3个输出端子与负载300连接。
另外，主变换电路201具有对各开关元件进行驱动的驱动电路(未图示)，驱动电路既可以内置于半导体装置202，也可以是独立于半导体装置202而另外具有驱动电路的结构。驱动电路生成对主变换电路201的开关元件进行驱动的驱动信号，供给至主变换电路201的开关元件的控制电极。具体地说，按照来自后述的控制电路203的控制信号，向各开关元件的控制电极输出将开关元件设为接通状态的驱动信号和将开关元件设为断开状态的驱动信号。在将开关元件维持为接通状态的情况下，驱动信号是大于或等于开关元件的阈值电压的电压信号(接通信号)，在将开关元件维持为断开状态的情况下，驱动信号为小于或等于开关元件的阈值电压的电压信号(断开信号)。
控制电路203对主变换电路201的开关元件进行控制，以向负载300供给期望的电力。具体地说，基于应向负载300供给的电力，对主变换电路201的各开关元件应成为接通状态的时间(接通时间)进行计算。例如，能够通过与应输出的电压相对应地对开关元件的接通时间进行调制的PWM控制，对主变换电路201进行控制。并且，向主变换电路201所具备的驱动电路输出控制指令(控制信号)，以在各时刻向应成为接通状态的开关元件输出接通信号，向应成为断开状态的开关元件输出断开信号。驱动电路按照该控制信号，将接通信号或者断开信号作为驱动信号而向各开关元件的控制电极输出。
在本实施方式涉及的电力变换装置中，作为主变换电路201的开关元件和续流二极管，可以应用实施方式1至4涉及的半导体装置，因而能够通过简化后的工序而实现可靠性高的装置。
在本实施方式中，对将上述半导体装置应用于两电平的三相逆变器的例子进行了说明，但不限定于此，可以应用于各种电力变换装置。在本实施方式中，采用了两电平的电力变换装置，但也可以是三电平或多电平的电力变换装置，在向单相负载供给电力的情况下，也可以向单相逆变器应用上述半导体装置。另外，在向直流负载等供给电力的情况下，也可以向DC/DC转换器或AC/DC转换器应用上述半导体装置。
另外，应用了上述半导体装置的电力变换装置不限定于上述的负载为电动机的情况，例如，还可以用作放电加工机、激光加工机、感应加热烹调器、或非接触器供电***的电源装置，并且也可以用作太阳能发电***或蓄电***等的功率调节器。

Claims (17)

1.一种半导体装置的制造方法，其特征在于，具有以下工序：
向壳体中提供半导体芯片、端子、具有金属图案的绝缘基板以及涂敷于所述半导体芯片的烧结材料；
提供由设置于所述壳体中的格子进行支撑的颗粒状的多个封装树脂；
通过将所述壳体的内部加热至比室温高的第1温度，从而气化后的所述烧结材料的溶剂从所述格子的间隙和所述多个封装树脂的间隙向所述壳体之外排出；以及
通过将所述壳体的内部加热至比所述第1温度高的第2温度，从而熔化后的所述多个封装树脂穿过所述格子的间隙而成为覆盖所述半导体芯片的树脂层。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在将所述壳体中加热至所述第2温度时，将所述壳体的周围的气氛设为比大气压低的压力。
3.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述烧结材料将所述半导体芯片和所述端子接合。
4.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
在将所述壳体的内部加热至所述第1温度之后，不对所述壳体的内部进行冷却，而是将所述壳体的内部加热至所述第2温度。
5.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，具有以下工序：
在提供了由所述格子支撑的所述多个封装树脂之后，提供由在所述壳体中的所述格子之上设置的上部格子支撑的与所述多个封装树脂相比熔点高的颗粒状的多个辅助封装树脂；以及
在将所述壳体的内部加热至所述第2温度之后，通过将所述壳体的内部加热至比所述第2温度高的第3温度，从而熔化后的所述多个辅助封装树脂穿过所述上部格子的间隙而成为所述树脂层之上的辅助树脂层。
6.根据权利要求5所述的半导体装置的制造方法，其特征在于，
在将所述壳体的温度加热至所述第3温度时，将所述壳体的周围的气氛设为比大气压低的压力。
7.根据权利要求5所述的半导体装置的制造方法，其特征在于，
在将所述壳体的内部加热至所述第2温度之后，不对所述壳体的内部进行冷却，而是将所述壳体的内部加热至所述第3温度。
8.根据权利要求5所述的半导体装置的制造方法，其特征在于，
所述上部格子的间隙比所述格子的间隙大，
所述多个辅助封装树脂比所述多个封装树脂大。
9.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
在提供所述多个封装树脂之前，将所述格子装入至所述壳体。
10.根据权利要求9所述的半导体装置的制造方法，其特征在于，
所述格子具有金属部分。
11.根据权利要求10所述的半导体装置的制造方法，其特征在于，
所述金属部分直接或经由导电材料与所述端子接触。
12.一种半导体装置，其特征在于，具有：
壳体；
绝缘基板，其具有金属图案，该绝缘基板被固定于所述壳体；
半导体芯片，其设置于所述壳体中，该半导体芯片被固定于所述金属图案；
树脂层，其覆盖所述半导体芯片；
格子，其在所述壳体中的所述半导体芯片的上方，与所述绝缘基板相对地设置；以及
上部格子，其设置于所述壳体中的所述格子的上方。
13.根据权利要求12所述的半导体装置，其特征在于，
所述格子通过粘接剂而被固定于所述壳体。
14.根据权利要求12所述的半导体装置，其特征在于，
所述格子嵌合于所述壳体。
15.根据权利要求12至14中任一项所述的半导体装置，其特征在于，
所述格子具有金属部分。
16.根据权利要求15所述的半导体装置，其特征在于，
具有直接或经由导电材料与所述金属部分接触的端子。
17.一种电力变换装置，其特征在于，具有：
主变换电路，其具有权利要求12至16中任一项所述的半导体装置，该主变换电路对被输入来的电力进行变换而输出；以及
控制电路，其将对所述主变换电路进行控制的控制信号向所述主变换电路输出。
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JP7070373B2 (ja) 2022-05-18
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