CN111223833A - Integrated circuit structure and forming method thereof - Google Patents

Integrated circuit structure and forming method thereof Download PDF

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Publication number
CN111223833A
CN111223833A CN202010029321.XA CN202010029321A CN111223833A CN 111223833 A CN111223833 A CN 111223833A CN 202010029321 A CN202010029321 A CN 202010029321A CN 111223833 A CN111223833 A CN 111223833A
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parts
integrated circuit
epoxy resin
circuit structure
materials
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向彦瑾
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Sichuan Howell Information Technology Co Ltd
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Sichuan Howell Information Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C08K2003/282—Binary compounds of nitrogen with aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00—Properties
    • C08L2201/02—Flame or fire retardant/resistant
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend

Abstract

An integrated circuit structure and a method of forming the same. The invention discloses an integrated circuit, which comprises the following raw material components in parts by weight: main materials: 80-150 parts of alicyclic modified epoxy resin, 20-40 parts of olfactory epoxy resin, 30-80 parts of phenolic novolac resin, 20-70 parts of aromatic polyamide, 10-20 parts of silicon dioxide, 15-30 parts of alumina, 10-20 parts of aluminum nitride, 12-22 parts of calcium silicate and 12-18 parts of polymethylsiloxane; auxiliary materials: the invention relates to a composite material, which comprises, by weight, 10-20 parts of aromatic tertiary amine, 10-15 parts of a phosphorus compound, 8-22 parts of aliphatic polyester vinegar, 5-12 parts of fatty acid, 15-25 parts of titanic acid vinegar and 15-20 parts of antimony trioxide, and relates to the technical field of integrated circuits. The integrated circuit structure and the forming method thereof greatly improve the flame retardant capability of the integrated circuit board during working, effectively improve the stability of the integrated circuit board, greatly improve the overall toughness of the integrated circuit by adding the toughening agents, namely the organic silicon rubber and the nitrile rubber, and effectively avoid the cracking and the damage of the circuit board caused by bending the integrated circuit board.

Description

Integrated circuit structure and forming method thereof
Technical Field
The invention relates to the technical field of integrated circuits, in particular to an integrated circuit structure and a forming method thereof.
Background
An integrated circuit board is a carrier on which an integrated circuit is mounted. But often the integrated circuit board is also brought on. The integrated circuit board is mainly made of silica gel, so the integrated circuit board is generally green. The integrated circuit board is made by using semiconductor manufacturing process, and many transistors, resistors, capacitors and other components are manufactured on a small single crystal silicon chip, and the components are combined into a complete electronic circuit by multilayer wiring or tunnel wiring. An integrated circuit is a microelectronic device or component. The components such as transistor, resistor, capacitor and inductor and wiring required in a circuit are interconnected together by a certain process, and then packaged in a tube shell to form a micro structure with the required circuit function.
When the common integrated circuit is used, only one side of the surface of the common integrated circuit contains a conductive circuit, the method is not beneficial to reducing the circuit volume and improving the utilization rate of the integrated circuit, and the traditional and common integrated circuit is often lack of flame-retardant waterproof materials during preparation, so that the waterproof and flame-retardant performance of the existing integrated circuit structure is seriously insufficient, and the use is influenced.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides an integrated circuit structure and a forming method thereof, which solve the problems that when a common integrated circuit is used, only one side of the surface of the common integrated circuit contains a conductive circuit, the method is not beneficial to reducing the circuit volume and improving the utilization rate of the integrated circuit, and the traditional integrated circuit is often lack of flame-retardant waterproof materials during preparation, so that the waterproof and flame-retardant performance of the traditional integrated circuit structure is seriously insufficient, and the use is influenced.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: an integrated circuit comprises the following raw material components in parts by weight:
main materials: 80-150 parts of alicyclic modified epoxy resin, 20-40 parts of olfactory epoxy resin, 30-80 parts of phenolic novolac resin, 20-70 parts of aromatic polyamide, 10-20 parts of silicon dioxide, 15-30 parts of alumina, 10-20 parts of aluminum nitride, 12-22 parts of calcium silicate and 12-18 parts of polymethylsiloxane;
auxiliary materials: 10-20 parts of aromatic tertiary amine, 10-15 parts of phosphorus compound, 8-22 parts of aliphatic polyester vinegar, 5-12 parts of fatty acid, 5-10 parts of organic silicon rubber, 10-30 parts of nitrile rubber, 15-25 parts of organosilane, 15-25 parts of titanic acid vinegar and 15-20 parts of antimony trioxide.
Preferably, the main materials are as follows: 80 parts of alicyclic modified epoxy resin, 20 parts of olfactory epoxy resin, 30 parts of phenolic novolac resin, 20 parts of aromatic polyamide, 10 parts of silicon dioxide, 15 parts of alumina, 10 parts of aluminum nitride, 12 parts of calcium silicate and 12 parts of polymethylsiloxane;
auxiliary materials: 10 parts of aromatic tertiary amine, 10 parts of phosphorus compound, 8 parts of aliphatic polyester, 5 parts of fatty acid, 5 parts of organic silicon rubber, 10 parts of nitrile rubber, 15 parts of organosilane, 15 parts of titanic acid vinegar and 15 parts of antimony trioxide.
Preferably, the main materials are as follows: 100 parts of alicyclic modified epoxy resin, 30 parts of olfactory epoxy resin, 50 parts of phenolic novolac resin, 45 parts of aromatic polyamide, 15 parts of silicon dioxide, 25 parts of alumina, 15 parts of aluminum nitride, 18 parts of calcium silicate and 15 parts of polymethylsiloxane;
auxiliary materials: 15 parts of aromatic tertiary amine, 12 parts of phosphorus compound, 15 parts of aliphatic polyester, 8 parts of fatty acid, 7 parts of organic silicon rubber, 20 parts of nitrile rubber, 20 parts of organosilane, 20 parts of titanic acid vinegar and 18 parts of antimony trioxide.
Preferably, the main materials are as follows: 150 parts of alicyclic modified epoxy resin, 40 parts of olfactory epoxy resin, 80 parts of phenolic novolac resin, 70 parts of aromatic polyamide, 20 parts of silicon dioxide, 30 parts of alumina, 20 parts of aluminum nitride, 22 parts of calcium silicate and 18 parts of polymethylsiloxane;
auxiliary materials: 20 parts of aromatic tertiary amine, 15 parts of phosphorus compound, 22 parts of aliphatic polyester, 12 parts of fatty acid, 10 parts of organic silicon rubber, 30 parts of butadiene acrylonitrile rubber, 25 parts of organosilane, 25 parts of titanium acid vinegar and 20 parts of antimony trioxide.
The invention comprises an integrated circuit structure, which comprises an integrated circuit structure base layer, wherein copper wire layers are fixedly connected to two sides of the integrated circuit structure base layer, a varnish layer is fixedly connected to one side, away from the integrated circuit structure base layer, of each copper wire layer, connecting copper wires penetrate through the opposite sides of the two copper wire layers, and two ends of each connecting copper wire are fixedly connected with the copper wire layers respectively.
The invention also includes a method of forming an integrated circuit structure, comprising the steps of:
step 1: preparing a preparation tool: taking out all production tools participating in the preparation work, wiping the production tools with clean soft cloth, and placing the production tools for later use;
step 2: finishing and induction of reaction materials: taking out all reaction materials participating in preparation, weighing, putting the reaction materials on a special table top for preparation according to types, covering and sealing, and then putting for later use;
and step 3: first addition of reaction material: pouring weighed basic resin (alicyclic modified epoxy resin, olfactory epoxy resin and linear phenolic resin) into a reaction crucible, slowly heating to 150 ℃, adding aromatic polyamide, silicon dioxide, alumina, aluminum nitride, calcium silicate and polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then preserving heat for 5 minutes;
and 4, step 4: adding auxiliary materials: after the heat-preserved materials are stirred uniformly, adding aromatic tertiary amine, phosphorus compounds, aliphatic series vinegar, fatty acid, organic silicon rubber, nitrile rubber, organosilane, titanic acid vinegar and antimony trioxide into a crucible step by step;
and 5: and (3) temperature regulation: continuously heating the reaction crucible added with the auxiliary materials, heating to 300 ℃, and preserving heat for 10 minutes;
step 6: preparing a product: lay one deck copper line layer flat in the mould bottom, then with foretell high temperature material stop heating back, empty high temperature solution to the mould on, then put into the assigned position with second copper line layer and connecting copper wire, wait that it dries, when its surface temperature reduces to the room temperature, install electronic components in integrated circuit board both sides, then brush the varnish to its two sides, at last take out the product can.
Preferably, in the step 3, when the material is added, the material is stirred while being added.
Preferably, in the step 5, the crucible is stirred by a stirring motor while being continuously heated.
(III) advantageous effects
The invention provides an integrated circuit structure and a forming method thereof. Compared with the prior art, the method has the following beneficial effects:
(1) the integrated circuit structure and the forming method thereof are characterized in that the integrated circuit structure comprises the following main materials: 80-150 parts of alicyclic modified epoxy resin, 20-40 parts of olfactory epoxy resin, 30-80 parts of phenolic novolac resin, 20-70 parts of aromatic polyamide, 10-20 parts of silicon dioxide, 15-30 parts of alumina, 10-20 parts of aluminum nitride, 12-22 parts of calcium silicate and 12-18 parts of polymethylsiloxane; auxiliary materials: 10-20 parts of aromatic tertiary amine, 10-15 parts of phosphorus compound, 8-22 parts of aliphatic polyester vinegar, 5-12 parts of fatty acid, 5-10 parts of organic silicon rubber, 10-30 parts of nitrile rubber, 15-25 parts of organosilane, 15-25 parts of titanic acid vinegar and 15-20 parts of antimony trioxide, by adding the flame-retardant resin, namely the olfactory epoxy resin, into the integrated circuit structure, the flame retardant capability of the integrated circuit board during working is greatly improved, by adding the fixing agents, namely the linear phenolic resin and the aromatic polyamide, into the integrated circuit structure, the stability of the integrated circuit board is effectively improved, by adding the toughening agents, namely the organic silicon rubber and the butadiene-acrylonitrile rubber, in the integrated circuit structure, the overall toughness of the integrated circuit is greatly improved, and cracking and damage of a circuit board caused by bending the integrated circuit board are effectively avoided.
(2) The integrated circuit structure and the forming method thereof are characterized in that copper wire layers are fixedly connected with both sides of an integrated circuit structure basic layer, a varnish layer is fixedly connected with one side of each copper wire layer far away from the integrated circuit structure basic layer, connecting copper wires penetrate through the opposite sides of the two copper wire layers, and both ends of the connecting copper wire are respectively fixedly connected with the copper wire layers, the copper wire layers are added on both sides of the basic layer of the integrated circuit structure, so that the workers can install the electronic components on both sides of the integrated circuit board according to the requirements, the volume of the integrated circuit is greatly reduced, and can be electrically connected through the connecting copper wire, thereby ensuring the connectivity of the circuits at the two sides of the integrated circuit board, and through the setting of varnish layer, effectual water of having avoided corrodes integrated circuit board, prevents the short circuit to a certain extent, great improvement integrated circuit board's waterproof nature.
(3) The integrated circuit structure and the forming method thereof are characterized in that the step 3: first addition of reaction material: pouring weighed basic resin (alicyclic modified epoxy resin, olfactory epoxy resin and linear phenolic resin) into a reaction crucible, slowly heating to 150 ℃, adding aromatic polyamide, silicon dioxide, alumina, aluminum nitride, calcium silicate and polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then preserving heat for 5 minutes; and 4, step 4: adding auxiliary materials: after the heat-preserved materials are stirred uniformly, adding aromatic tertiary amine, phosphorus compounds, aliphatic series vinegar, fatty acid, organic silicon rubber, nitrile rubber, organosilane, titanic acid vinegar and antimony trioxide into a crucible step by step; and 5: and (3) temperature regulation: the reaction crucible added with the auxiliary materials is continuously heated and heated to 300 ℃, the heat preservation time is 10 minutes, the heat preservation is carried out on the heated main materials in the step 3, so that the materials which are not heated in time in the main materials can be fully heated in the heat preservation process, the reliability of the heated materials is further improved, the heat preservation of the materials in the step 5 can also improve the reliability of the materials, and the qualification rate of the product is ensured.
Drawings
FIG. 1 is a cross-sectional view of the structure of the present invention.
In the figure, 1, an integrated circuit structure base layer; 2. a copper wire layer; 3. a varnish layer; 4. and connecting copper wires.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the embodiment of the present invention provides three technical solutions: contain an integrated circuit structure in the scheme, including integrated circuit structure foundation layer 1, the equal fixedly connected with copper line layer 2 in both sides of integrated circuit structure foundation layer 1, one side fixedly connected with varnish layer 3 of integrated circuit structure foundation layer 1 is kept away from on copper line layer 2, and two relative one sides in copper line layer 2 run through and have connecting copper wire 4 to connecting copper wire 4's both ends respectively with copper line layer 2 fixed connection.
A method for forming an integrated circuit structure specifically comprises the following embodiments:
example 1
Step 1: preparing a preparation tool: taking out all production tools participating in the preparation work, wiping the production tools with clean soft cloth, and placing the production tools for later use;
step 2: finishing and induction of reaction materials: taking out all reaction materials participating in preparation, weighing, putting the reaction materials on a special table top for preparation according to types, covering and sealing, and then putting for later use;
and step 3: first addition of reaction material: pouring weighed base resins (80 parts of alicyclic modified epoxy resin, 20 parts of olfactory epoxy resin and 30 parts of phenolic novolac resin) into a reaction crucible, slowly heating to 150 ℃, adding 20 parts of aromatic polyamide, 10 parts of silicon dioxide, 15 parts of alumina, 10 parts of aluminum nitride, 12 parts of calcium silicate and 12 parts of polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then keeping the temperature for 5 minutes;
and 4, step 4: adding auxiliary materials: after the heat-preserved materials are stirred uniformly, 10 parts of aromatic tertiary amine, 10 parts of phosphorus compound, 8 parts of aliphatic series vinegar, 5 parts of fatty acid, 5 parts of organic silicon rubber, 10 parts of butadiene acrylonitrile rubber, 15 parts of organosilane, 15 parts of titanic acid vinegar and 15 parts of antimony trioxide are gradually added into a crucible;
and 5: and (3) temperature regulation: continuously heating the reaction crucible added with the auxiliary materials, heating to 300 ℃, and preserving heat for 10 minutes;
step 6: preparing a product: lay one deck copper wire layer 2 tiling in the mould bottom, then with foretell high temperature material stop heating back, empty high temperature solution to the mould on, then put into assigned position with second piece copper wire layer 2 and connecting copper wire 4, treat it and dry, when its surface temperature reduces to the room temperature, install electronic components in integrated circuit board both sides, then brush the varnish on its two sides, take out the product at last can.
Example 2
Step 1: preparing a preparation tool: taking out all production tools participating in the preparation work, wiping the production tools with clean soft cloth, and placing the production tools for later use;
step 2: finishing and induction of reaction materials: taking out all reaction materials participating in preparation, weighing, putting the reaction materials on a special table top for preparation according to types, covering and sealing, and then putting for later use;
and step 3: first addition of reaction material: pouring weighed base resins (100 parts of alicyclic modified epoxy resin, 30 parts of olfactory epoxy resin and 50 parts of phenolic novolac resin) into a reaction crucible, slowly heating to 150 ℃, adding 45 parts of aromatic polyamide, 15 parts of silicon dioxide, 25 parts of alumina, 15 parts of aluminum nitride, 18 parts of calcium silicate and 15 parts of polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then keeping the temperature for 5 minutes;
and 4, step 4: adding auxiliary materials: after the heat-preserved materials are stirred uniformly, 15 parts of aromatic tertiary amine, 12 parts of phosphorus compound, 15 parts of aliphatic series vinegar, 8 parts of fatty acid, 7 parts of organic silicon rubber, 20 parts of butadiene acrylonitrile rubber, 20 parts of organosilane, 20 parts of titanic acid vinegar and 18 parts of antimony trioxide are gradually added into a crucible;
and 5: and (3) temperature regulation: continuously heating the reaction crucible added with the auxiliary materials, heating to 300 ℃, and preserving heat for 10 minutes;
step 6: preparing a product: lay one deck copper wire layer 2 tiling in the mould bottom, then with foretell high temperature material stop heating back, empty high temperature solution to the mould on, then put into assigned position with second piece copper wire layer 2 and connecting copper wire 4, treat it and dry, when its surface temperature reduces to the room temperature, install electronic components in integrated circuit board both sides, then brush the varnish on its two sides, take out the product at last can.
Example 3
Step 1: preparing a preparation tool: taking out all production tools participating in the preparation work, wiping the production tools with clean soft cloth, and placing the production tools for later use;
step 2: finishing and induction of reaction materials: taking out all reaction materials participating in preparation, weighing, putting the reaction materials on a special table top for preparation according to types, covering and sealing, and then putting for later use;
and step 3: first addition of reaction material: pouring weighed base resin (150 parts of alicyclic modified epoxy resin, 40 parts of olfactory epoxy resin and 80 parts of phenolic novolac resin) into a reaction crucible, slowly heating to 150 ℃, adding 70 parts of aromatic polyamide, 20 parts of silicon dioxide, 30 parts of alumina, 20 parts of aluminum nitride, 22 parts of calcium silicate and 18 parts of polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then keeping the temperature for 5 minutes;
and 4, step 4: adding auxiliary materials: after the materials after heat preservation are stirred evenly, 20 parts of aromatic tertiary amine, 15 parts of phosphorus compound, 22 parts of aliphatic series polyvinyl acetate, 12 parts of fatty acid, 10 parts of organic silicon rubber, 30 parts of butadiene acrylonitrile rubber, 25 parts of organic silane, 25 parts of titanium acid vinegar and 20 parts of antimony trioxide are gradually added into a crucible;
and 5: and (3) temperature regulation: continuously heating the reaction crucible added with the auxiliary materials, heating to 300 ℃, and preserving heat for 10 minutes;
step 6: preparing a product: lay one deck copper wire layer 2 tiling in the mould bottom, then with foretell high temperature material stop heating back, empty high temperature solution to the mould on, then put into assigned position with second piece copper wire layer 2 and connecting copper wire 4, treat it and dry, when its surface temperature reduces to the room temperature, install electronic components in integrated circuit board both sides, then brush the varnish on its two sides, take out the product at last can.
In the step 3, when adding the materials, the materials need to be added and stirred at the same time, so that the stirring is more thorough, in the step 5, when continuously heating the crucible, the crucible is stirred by using a stirring motor, and the materials are stirred by continuously heating so as to be more uniformly mixed.
Comparative experiment
According to the claims, the existing manufacturers can produce three integrated circuit structures, after the three integrated circuit structures are subjected to cleaning treatment, the three integrated circuit structures and the common integrated circuit structure are subjected to comparison experiments of the flame retardant time and the preparation time of the product, and as shown in the table, through laboratory tests, the longest flame retardant time in the embodiment is 25 seconds, the flame retardant time is shortened by 10 seconds compared with the comparative example, the longest preparation time is 4.2 hours, and the flame retardant time is shortened by 1.8 hours compared with the comparative example.
Table 1: comparison table of flame retardant time and preparation time of integrated circuit structure and comparative example
Figure BDA0002362182920000091
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. An integrated circuit, characterized in that: the raw material components of the material comprise the following components in parts by weight:
main materials: 80-150 parts of alicyclic modified epoxy resin, 20-40 parts of olfactory epoxy resin, 30-80 parts of phenolic novolac resin, 20-70 parts of aromatic polyamide, 10-20 parts of silicon dioxide, 15-30 parts of alumina, 10-20 parts of aluminum nitride, 12-22 parts of calcium silicate and 12-18 parts of polymethylsiloxane;
auxiliary materials: 10-20 parts of aromatic tertiary amine, 10-15 parts of phosphorus compound, 8-22 parts of aliphatic polyester vinegar, 5-12 parts of fatty acid, 5-10 parts of organic silicon rubber, 10-30 parts of nitrile rubber, 15-25 parts of organosilane, 15-25 parts of titanic acid vinegar and 15-20 parts of antimony trioxide.
2. An integrated circuit according to claim 1, wherein: main materials: 80 parts of alicyclic modified epoxy resin, 20 parts of olfactory epoxy resin, 30 parts of phenolic novolac resin, 20 parts of aromatic polyamide, 10 parts of silicon dioxide, 15 parts of alumina, 10 parts of aluminum nitride, 12 parts of calcium silicate and 12 parts of polymethylsiloxane;
auxiliary materials: 10 parts of aromatic tertiary amine, 10 parts of phosphorus compound, 8 parts of aliphatic polyester, 5 parts of fatty acid, 5 parts of organic silicon rubber, 10 parts of nitrile rubber, 15 parts of organosilane, 15 parts of titanic acid vinegar and 15 parts of antimony trioxide.
3. An integrated circuit according to claim 1, wherein: main materials: 100 parts of alicyclic modified epoxy resin, 30 parts of olfactory epoxy resin, 50 parts of phenolic novolac resin, 45 parts of aromatic polyamide, 15 parts of silicon dioxide, 25 parts of alumina, 15 parts of aluminum nitride, 18 parts of calcium silicate and 15 parts of polymethylsiloxane;
auxiliary materials: 15 parts of aromatic tertiary amine, 12 parts of phosphorus compound, 15 parts of aliphatic polyester, 8 parts of fatty acid, 7 parts of organic silicon rubber, 20 parts of nitrile rubber, 20 parts of organosilane, 20 parts of titanic acid vinegar and 18 parts of antimony trioxide.
4. An integrated circuit according to claim 1, wherein: main materials: 150 parts of alicyclic modified epoxy resin, 40 parts of olfactory epoxy resin, 80 parts of phenolic novolac resin, 70 parts of aromatic polyamide, 20 parts of silicon dioxide, 30 parts of alumina, 20 parts of aluminum nitride, 22 parts of calcium silicate and 18 parts of polymethylsiloxane;
auxiliary materials: 20 parts of aromatic tertiary amine, 15 parts of phosphorus compound, 22 parts of aliphatic polyester, 12 parts of fatty acid, 10 parts of organic silicon rubber, 30 parts of butadiene acrylonitrile rubber, 25 parts of organosilane, 25 parts of titanium acid vinegar and 20 parts of antimony trioxide.
5. An integrated circuit structure comprising an integrated circuit structure base layer (1), characterized in that: the integrated circuit structure comprises an integrated circuit structure foundation layer (1), wherein a copper wire layer (2) is fixedly connected to the two sides of the integrated circuit structure foundation layer (1), a varnish layer (3) is fixedly connected to one side, away from the integrated circuit structure foundation layer (1), of the copper wire layer (2), a connecting copper wire (4) penetrates through one side, opposite to the copper wire layer (2), of the copper wire layer, and the two ends of the connecting copper wire (4) are fixedly connected with the copper wire layer (2) respectively.
6. A method of forming an integrated circuit structure, comprising: the method comprises the following steps:
step 1: preparing a preparation tool: taking out all production tools participating in the preparation work, wiping the production tools with clean soft cloth, and placing the production tools for later use;
step 2: finishing and induction of reaction materials: taking out all reaction materials participating in preparation, weighing, putting the reaction materials on a special table top for preparation according to types, covering and sealing, and then putting for later use;
and step 3: first addition of reaction material: pouring weighed basic resin (alicyclic modified epoxy resin, olfactory epoxy resin and linear phenolic resin) into a reaction crucible, slowly heating to 150 ℃, adding aromatic polyamide, silicon dioxide, alumina, aluminum nitride, calcium silicate and polymethylsiloxane, slowly heating to 260 ℃ after the addition is finished, and then preserving heat for 5 minutes;
and 4, step 4: adding auxiliary materials: after the heat-preserved materials are stirred uniformly, adding aromatic tertiary amine, phosphorus compounds, aliphatic series vinegar, fatty acid, organic silicon rubber, nitrile rubber, organosilane, titanic acid vinegar and antimony trioxide into a crucible step by step;
and 5: and (3) temperature regulation: continuously heating the reaction crucible added with the auxiliary materials, heating to 300 ℃, and preserving heat for 10 minutes;
step 6: preparing a product: tiling one deck copper line layer (2) in the mould bottom, then with foretell high temperature material stop heating back, empty high temperature solution to the mould on, then put into assigned position with second piece copper line layer (2) and connection copper wire (4), treat it and dry, when its surface temperature reduces to the room temperature, install electronic components in integrated circuit board both sides, then brush the varnish on its two sides, take out the product at last can.
7. The integrated circuit structure and method of forming the same as in claim 6, wherein: in the step 3, when the material is added, the material needs to be added while stirring.
8. The integrated circuit structure and method of forming the same as in claim 6, wherein: in the step 5, the crucible is stirred by using the stirring motor while being continuously heated.
CN202010029321.XA 2020-01-10 2020-01-10 Integrated circuit structure and forming method thereof Pending CN111223833A (en)

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JPH03272191A (en) * 1990-03-20 1991-12-03 Nec Corp Printed wiring board
JPH1187870A (en) * 1997-07-16 1999-03-30 Matsushita Electric Ind Co Ltd Circuit board and its manufacture
US6093476A (en) * 1997-05-02 2000-07-25 Shinko Electric Industries Co., Ltd. Wiring substrate having vias
US6403201B1 (en) * 1999-07-30 2002-06-11 Ngk Insulators, Ltd. Substrate material for wiring and substrate material for printed circuit using the same
CN1528852A (en) * 2003-09-26 2004-09-15 中国科学院广州化学研究所 Epoxy plastic cement and preparing method thereof
WO2005073264A1 (en) * 2004-01-30 2005-08-11 Nippon Steel Chemical Co., Ltd. Curable resin composition
JP2007129208A (en) * 2005-10-05 2007-05-24 Sumitomo Chemical Co Ltd Substrate for flexible printed wiring board and its manufacturing method
US20080303006A1 (en) * 2007-06-08 2008-12-11 Frank Huijs Flame retardant thermoplastic resinous compostion
US20140308530A1 (en) * 2011-08-09 2014-10-16 Mitsubishi Gas Chemical Company, Inc. Novel cyanate ester compound and method for producing the same, and curable resin composition comprising the compound, and cured product thereof composition
CN106674910A (en) * 2016-12-22 2017-05-17 科化新材料泰州有限公司 Low-stress epoxy plastic packaging material for semiconductor packaging
CN206383351U (en) * 2017-01-18 2017-08-08 华天科技（西安）有限公司 A kind of feed arrangement of anti-resin residue
CN107286583A (en) * 2017-06-20 2017-10-24 苏州生益科技有限公司 A kind of resin combination and the low flow prepreg made using it
CN110305445A (en) * 2019-05-16 2019-10-08 浙江华正新材料股份有限公司 A kind of black-colored resin composition, prepreg and laminate

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980000117A1 (en) * 1978-06-14 1980-01-24 Sumitomo Bakelite Co Substrate for flexible printed circuits and method of fabricating the same
JPH03272191A (en) * 1990-03-20 1991-12-03 Nec Corp Printed wiring board
US6093476A (en) * 1997-05-02 2000-07-25 Shinko Electric Industries Co., Ltd. Wiring substrate having vias
JPH1187870A (en) * 1997-07-16 1999-03-30 Matsushita Electric Ind Co Ltd Circuit board and its manufacture
US6403201B1 (en) * 1999-07-30 2002-06-11 Ngk Insulators, Ltd. Substrate material for wiring and substrate material for printed circuit using the same
CN1528852A (en) * 2003-09-26 2004-09-15 中国科学院广州化学研究所 Epoxy plastic cement and preparing method thereof
WO2005073264A1 (en) * 2004-01-30 2005-08-11 Nippon Steel Chemical Co., Ltd. Curable resin composition
JP2007129208A (en) * 2005-10-05 2007-05-24 Sumitomo Chemical Co Ltd Substrate for flexible printed wiring board and its manufacturing method
US20080303006A1 (en) * 2007-06-08 2008-12-11 Frank Huijs Flame retardant thermoplastic resinous compostion
US20140308530A1 (en) * 2011-08-09 2014-10-16 Mitsubishi Gas Chemical Company, Inc. Novel cyanate ester compound and method for producing the same, and curable resin composition comprising the compound, and cured product thereof composition
CN106674910A (en) * 2016-12-22 2017-05-17 科化新材料泰州有限公司 Low-stress epoxy plastic packaging material for semiconductor packaging
CN206383351U (en) * 2017-01-18 2017-08-08 华天科技（西安）有限公司 A kind of feed arrangement of anti-resin residue
CN107286583A (en) * 2017-06-20 2017-10-24 苏州生益科技有限公司 A kind of resin combination and the low flow prepreg made using it
CN110305445A (en) * 2019-05-16 2019-10-08 浙江华正新材料股份有限公司 A kind of black-colored resin composition, prepreg and laminate

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