CN111216452B - Piezoelectric type MEMS ink-jet printing head and manufacturing method - Google Patents
Piezoelectric type MEMS ink-jet printing head and manufacturing method Download PDFInfo
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- CN111216452B CN111216452B CN201811425039.2A CN201811425039A CN111216452B CN 111216452 B CN111216452 B CN 111216452B CN 201811425039 A CN201811425039 A CN 201811425039A CN 111216452 B CN111216452 B CN 111216452B
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/22—Manufacturing print heads
Abstract
The invention relates to a piezoelectric MEMS ink-jet printing head and a manufacturing method thereof, wherein an SOI silicon chip is used as a processing raw material of a vibrating plate and a nozzle plate; the pressure cavity, the drainage hole and the nozzle hole structure of the printing head are all integrated on the nozzle plate; a metal film layer is manufactured before the pressure cavity is manufactured, and the metal film layer is used as a masking layer of the ICP dry etching pressure cavity; in addition, the masking layer also serves as a bonding metal layer when the diaphragm and the nozzle plate are bonded in the later stage. Compared with the existing manufacturing method of the MEMS ink-jet printing head, the manufacturing method of the piezoelectric MEMS ink-jet printing head has the advantages of fewer overall process steps, fewer process types, higher dimensional precision and higher efficiency, and solves the technical problems that the existing manufacturing method of the piezoelectric MEMS ink-jet printing head has more process types, the quality of a vibrating plate is difficult to guarantee, and the potential risk caused by bonding is large.
Description
Technical Field
The invention belongs to the technical field of piezoelectric ink-jet printing heads, and relates to a piezoelectric ink-jet printing head and a manufacturing method thereof.
Background
The droplet jet printing technology is a printing technology which generates a pressure difference between an ink chamber and the outside in a certain extrusion mode, so that the internal pressure of a nozzle is larger than the outside pressure, and ink is pushed out of the nozzle to generate tiny ink droplets.
Inkjet print heads are generally classified into piezoelectric type inkjet print heads and thermal bubble type inkjet print heads according to the manner of generating ink droplets. The piezoelectric ink jet printing head utilizes the deformation of a piezoelectric material to generate pressure to jet ink drops; a thermal bubble type inkjet printhead ejects ink droplets by generating bubbles in ink by heating and generating pressure by expansion of the bubbles.
When a traditional piezoelectric ink-jet printing head is manufactured, two pieces of double-side polished monocrystalline silicon wafers are generally used as processing raw materials of a vibrating plate and a nozzle plate, a vibrating plate structure and a nozzle plate structure are manufactured on the monocrystalline silicon wafers respectively by adopting an MEMS (micro-electromechanical systems) process, and the manufactured vibrating plate and the manufactured nozzle plate are integrated by bonding and scribing processes.
At present, the traditional piezoelectric type ink jet printing head and the manufacturing method have the following problems:
1. the structure has the advantages that a part of the pressure cavity of the ink-jet printing head is positioned on the vibrating plate, and a part of the pressure cavity of the ink-jet printing head is positioned on the nozzle plate.
2. The related process types are more, and the borne process risks are larger: in order to ensure the very thin size of the vibrating plate (the vibrating plate with smaller thickness is more beneficial to the transmission of vibration and the generation of liquid drops), the raw materials of the vibrating plate and the nozzle plate of the traditional manufacturing method adopt common silicon wafers, and if the common silicon wafers are thinned only by adopting a machining mode, the surface roughness, the flatness and the like of the silicon wafers are poor easily caused due to large mechanical grinding stress; if a single-purification chemical etching method is adopted, the thickness removal amount is difficult to guarantee, and the etching thickness removal amount is easy to generate to be more or less. Therefore, after the vibrating plate and the nozzle plate are bonded, the vibrating plate is thinned by a CMP thinning process, that is, a silicon wafer is processed from thick to thin by a method of mechanical grinding and chemical liquid etching.
3. The potential risk caused by bonding is large
In the process of bonding two monocrystalline silicon wafers to form a pressure cavity, the direct silicon bonding is the best in terms of pressure cavity, manufacturing period and cost, but the direct silicon bonding technology has extremely strict requirements on cleanliness, roughness, environmental quality, bonding process conditions and the like of a bonding surface, so that in the conventional process, after a vibration plate is manufactured, a metal transition layer, usually a metal such as gold, copper, tin, lead and the like, is grown on the bonding surface of the vibration plate, and the transition layer is used for relieving the requirement of direct bonding. However, the transition layer metal may fall off and corrode in the post-process technology or during the use of the printing head, so that micro-channels and orifices in the printing head are blocked, and more uncontrollable risks are brought to the printing head.
Disclosure of Invention
The invention provides a piezoelectric MEMS ink-jet printing head and a manufacturing method thereof, aiming at solving the technical problems that the existing piezoelectric MEMS ink-jet printing head has multiple manufacturing processes and large process risk, the manufacturing method relates to more process types, the quality of a vibrating plate is difficult to guarantee, and the potential risk generated by bonding is large.
The technical solution of the invention is as follows:
the invention provides a piezoelectric MEMS ink-jet printing head, which comprises a piezoelectric ceramic layer, a vibrating plate and a nozzle plate which are arranged from top to bottom in sequence, and is characterized in that:
the vibrating plate is provided with an ink supply hole, the nozzle plate is sequentially provided with a pressure cavity, a drainage hole and a nozzle hole which are communicated with each other from top to bottom, and the pressure cavity is communicated with the ink supply hole.
Further, the pressure chamber 31 comprises two main ink channels 311 arranged at the positions close to the nozzle plate 3, and two groups of micro-channel structures arranged between the two main ink channels 311;
the main ink channel 311 is communicated with the ink supply hole 21, each group of micro-channel structures comprises a filtering channel 312 and a flow channel 313 which are connected, the filtering channel 312 is of a broken line structure, the inlet of the filtering channel 312 is communicated with the main ink channel 311, the outlet of the filtering channel 312 is communicated with the flow channel 313, and the flow channel 313 is communicated with the drainage hole 32.
Meanwhile, the invention also provides a manufacturing method of the piezoelectric MEMS ink-jet printing head, which is characterized by comprising the following steps:
1) fabrication of nozzle plate 3
1.1) nozzle plate 3 processing Material selection
According to the thickness requirement of the nozzle plate 3, selecting a first SOI silicon wafer with a proper specification as a processing raw material of the nozzle plate 3; the first SOI silicon chip comprises a device layer, an oxidation layer and a supporting layer, wherein the oxidation layer is positioned between the device layer and the supporting layer;
1.2) preparation of nozzle opening 33
Etching a nozzle hole 33 on the device layer of the first SOI silicon chip by adopting an MEMS process;
1.3) production of pressure Chamber 31 and drainage hole 32
1.3.1) manufacturing a metal film layer on the surface of the first SOI silicon chip supporting layer;
1.3.2) etching the shape of the pressure cavity 31 on the metal film layer by adopting an MEMS process;
1.3.3) etching partial drainage holes 32 on the supporting layer by adopting an MEMS (micro-electromechanical systems) process;
1.3.4) etching a pressure cavity 31 and a complete drainage hole 32 on the supporting layer by using the metal film layer as a masking layer and adopting ICP dry etching;
2) bonding of
2.1) selecting a second SOI silicon wafer with a proper specification as a processing raw material of the vibrating plate 2 according to the thickness requirement of the vibrating plate 2;
2.2) bonding a device layer of a second SOI silicon wafer with the first SOI silicon wafer by using a residual metal film layer of the first SOI silicon wafer after the pressure cavity 31 is etched as a bonding metal layer;
3) manufacture of ink supply hole in vibrating plate 2
3.1) thinning the bonded second SOI silicon wafer from one side of the second SOI silicon wafer support layer until an oxide layer is formed;
3.2) continuously removing the oxide layer of the second SOI silicon wafer;
3.3) etching an ink supply hole 21 on the device layer of the second SOI silicon chip by adopting an MEMS process;
4) carrying out scribing separation on the first SOI silicon wafer;
5) and gluing a second SOI silicon chip to manufacture a piezoelectric ceramic layer 1.
Further, the thickness of the first SOI silicon wafer in the step 1.1) is 400+1+50 μm, wherein the thickness of the device layer is 50 μm, the thickness of the oxide layer is 1 μm, and the thickness of the support layer is 400 μm;
the thickness of the second SOI silicon wafer in step 2.1) is 230+1+20 μm, wherein the thickness of the device layer is 20 μm, the thickness of the oxide layer is 1 μm, and the thickness of the support layer is 230 μm.
Further, step 1.2) is specifically as follows:
1.2.1) spin coating photoresist: spin-coating a layer of photoresist on the surface of the device layer of the first SOI silicon wafer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.2.2) exposure lithography: a nozzle hole 33 mask plate is utilized, the first SOI silicon chip is placed in a photoetching machine, and the shape of the nozzle hole 33 is photoetched;
1.2.3) graphic development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.2.4) ICP dry etching: after development, dry etching is carried out until the oxide layer is etched to form a nozzle hole 33;
1.2.5) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and cleaning.
Further, the metal thin film layer in the step 1.3.1) includes a titanium film, a nickel film and a gold film which are grown in sequence.
Further, step 1.3.2) is specifically:
1.3.2.1) spin-on resist: spin-coating a layer of photoresist on the surface of the metal film layer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.3.2.2) exposure lithography: utilizing a pressure cavity 31 mask plate, and putting the first SOI silicon wafer into a photoetching machine for photoetching to form the appearance of the pressure cavity 31;
1.3.2.3) graphic development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.3.2.4) metal film patterning: sequentially putting the developed silicon wafer into a titanium corrosive liquid, a nickel corrosive liquid and a gold corrosive liquid, and carrying out graphical corrosion on the gold, the nickel and the titanium films, so that the appearance of the pressure cavity 31 is etched in the metal film layer;
1.3.2.5) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and cleaning.
Further, step 1.3.3) is specifically:
1.3.3.1) spin-on resist: spin-coating a layer of photoresist on the surface of one side of the first SOI silicon wafer supporting layer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.3.3.2) exposure lithography: utilizing the drainage hole 32 to mask the plate, and placing the first SOI silicon wafer into a photoetching machine for photoetching;
1.3.3.3) pattern development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.3.3.4) ICP dry etching: etching the drainage holes 32 after development, wherein the etching depth is 300 mu m;
1.3.3.5) wet stripping: and removing the residual photoresist by using a degumming agent, and cleaning.
Further, step 3.3) is specifically:
3.3.1) spin coating photoresist: spin-coating a layer of photoresist on the surface of the second silicon wafer with the oxide layer removed, and then placing the silicon wafer on a hot plate for soft baking;
3.3.2) exposure lithography: selecting a mask plate for manufacturing the ink supply hole, photoetching the ink supply hole, and putting the mask plate into a photoetching machine for photoetching;
3.3.3) graphic development: developing in NaOH solution after photoetching is finished, and then putting a second silicon wafer on a hot plate for hardening;
3.3.4) ICP dry etching: the ink supply hole 21 was etched to an etching depth of 20 μm.
Further, the photoresist used in steps 1.2.1), 1.3.2.1), 1.3.3.1) and 3.3.1) was AZ4620, and the temperature of the hot plate was 95 ℃;
the mass concentration of the NaOH solution in steps 1.2.3), 1.3.2.3), 1.3.3.3) and 3.3.3) was five thousandths of a thousand, and the temperature of the hot plate was 115 ℃.
Further, in the step 1.3.1), the thickness of the titanium film is 30nm, the thickness of the nickel film is 40nm, and the thickness of the gold film is 500 nm.
Further, the ratio of the gold corrosive liquid in the step 1.3.2.4) is as follows: KI: i is2：H20＝4g:1g:40ml；
The volume ratio of the nickel corrosive liquid is as follows: h3NO3：H2O ═ 3:7, where the concentration of nitric acid was 65%;
the volume ratio of the titanium corrosive liquid is as follows: HF: H2O＝1：100。
Compared with the prior art, the invention has the beneficial effects that:
1. according to the piezoelectric MEMS ink-jet printing head, the pressure cavity, the drainage hole and the nozzle hole structure of the printing head are integrated on the nozzle plate, and the traditional pressure cavity structure is distributed on the vibrating plate and the nozzle plate, so that the process risk is reduced.
2. According to the piezoelectric MEMS ink-jet printing head, the filtering flow channel in the micro-flow channel structure is of the broken line structure, and the broken line structure is beneficial to reducing the liquid backflow of the flow channel, reducing the pressure loss of the flow channel and improving the jetting performance of the printing head; meanwhile, the attenuation of pressure waves at a plurality of tortuous bends is increased, and the pressure waves in the flow channels are converted into a plurality of small pressure waves to accelerate the attenuation of the pressure waves, so that the pressure crosstalk among the flow channels is reduced.
3. According to the manufacturing method of the piezoelectric type MEMS ink-jet printing head, the SOI silicon wafer is used as a processing raw material of the vibrating plate, different compositions and different corrosion characteristics of all layers of the SOI silicon wafer are utilized, and the vibrating plate with the proper thickness can be manufactured only by using a dry etching thinning process in the manufacturing process of the vibrating plate, so that the critical dimension of the thickness of the vibrating plate is ensured, and the perfect quality requirement of the surface of the vibrating plate is also ensured.
4. According to the manufacturing method of the piezoelectric MEMS ink-jet printing head, the metal film layer is manufactured before the pressure cavity is manufactured, and the metal film layer is used as a masking layer of the ICP dry etching pressure cavity; in addition, the masking layer is used as a bonding metal layer when the vibrating plate and the nozzle plate are bonded in the later period, so that the process steps can be reduced, and the manufacturing period of the printing head is shortened.
5. According to the manufacturing method of the piezoelectric MEMS ink-jet printing head, most of the metal film layer is corroded when the pressure cavity is manufactured, and only a small part of the metal film layer is left to serve as a bonding metal layer, so that the risk that a micro-channel and a jet hole in the printing head are blocked due to the fact that the metal film layer falls off does not exist in the later period.
Drawings
FIG. 1 is a block diagram of a piezoelectric ink jet print head according to an embodiment of the present invention;
FIG. 2 is a partial cross-sectional view of a piezoelectric ink jet print head according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating a method for manufacturing a piezoelectric MEMS inkjet printhead according to an embodiment of the invention.
Wherein the reference numerals are: 1-piezoelectric ceramic layer, 2-vibration plate, 21-ink supply hole, 3-nozzle plate, 31-pressure cavity, 311-main ink channel, 312-filtering channel, 313-flow channel, 32-drainage hole and 33-nozzle hole.
Detailed Description
A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the piezoelectric ink jet print head includes a piezoelectric ceramic layer 1, a vibration plate 2, and a nozzle plate 3 in this order from top to bottom, wherein the vibration plate 2 and the nozzle plate 3 are made of SOI silicon wafers. The vibrating plate 2 is provided with an ink supply hole 21, the nozzle plate 3 is sequentially provided with a pressure cavity 31, a drainage hole 32 and a nozzle hole 33 from top to bottom, the pressure cavity 31 comprises two main ink channels 311 arranged at the positions close to the edges of the nozzle plate 3 and two groups of micro-channel structures arranged between the two main ink channels 311; the main ink channel 311 is communicated with the ink supply hole 21, each group of micro-channel structures comprises a filtering channel 312 and a flow channel 313 which are connected, the filtering channel 312 is of a broken line structure, the inlet of the filtering channel 312 is communicated with the main ink channel 311, the outlet of the filtering channel 312 is communicated with the flow channel 313, and the flow channel 313 is communicated with the drainage hole 32.
FIG. 2 is a cross-sectional view of a cell in a piezoelectric ink jet print head. The nozzle plate 3 adopts SOI double polished wafer with the thickness of 400+1+50 μm as a processing raw material, wherein the thickness of a device layer is 50 μm, the thickness of an oxidation layer is 1 μm, and the thickness of a supporting layer is 400 μm; the vibrating plate 2 adopts an SOI double-polished wafer with the thickness of 230+1+20 μm as a processing raw material, wherein the thickness of a device layer is 20 μm, the thickness of an oxidation layer is 1 μm, and the thickness of a supporting layer is 230 μm. A layer of SiO with the thickness of 1 μm is clamped between the two silicon wafers2As a cutoff layer.
FIG. 3 is a flow chart of an overall process for manufacturing a piezoelectric MEMS inkjet printhead according to an embodiment of the present invention, which includes the following steps:
1. the lower raw material, the nozzle plate 3 and the vibrating plate 2 are both made of SOI double polished wafers; the nozzle plate 3 adopts a first SOI silicon wafer with the thickness of 400+1+50 mu m; the second SOI silicon wafer with a thickness of 230+1+20 μm is used for the vibration plate 2.
2. And cleaning the silicon wafer, namely cleaning the first SOI silicon wafer and the second SOI silicon wafer by using SPM (spin-on-silicon), RCA-1 and RCA-2 standard cleaning liquids respectively.
3. Spin-coating a photoresist, spin-coating a layer of photoresist on the surface of the device layer of the first SOI silicon wafer, wherein the model of the photoresist is AZ4620, and then placing the silicon wafer on a hot plate at 95 ℃ for soft baking.
4. And (4) exposing and photoetching, selecting a nozzle hole 33 mask plate, and putting the first SOI silicon wafer into a photoetching machine for photoetching.
5. And (4) pattern development, wherein after photoetching is finished, the development is carried out in a five-thousandth NaOH solution, and then the silicon wafer is placed on a hot plate at the temperature of 115 ℃ for 40min for hardening.
6. And (3) performing ICP dry etching until the SOI oxide layer is etched.
7. And (4) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and performing standard cleaning.
8. And (3) growing a film, namely sequentially growing a titanium film with the thickness of 30nm, a nickel film with the thickness of 40nm and a gold film with the thickness of 500nm on the surface of the supporting layer by using a magnetron sputtering instrument.
9. Spin-coating a photoresist, spin-coating a layer of photoresist on the surface of the metal film layer, wherein the type of the photoresist is AZ4620, and then placing the silicon wafer on a hot plate at 95 ℃ for soft baking.
10. And (3) exposing and photoetching, namely selecting a mask plate for manufacturing the pressure cavity 31, photoetching the appearance of the pressure cavity 31, and putting the first SOI silicon wafer into a photoetching machine for photoetching.
11. And (4) pattern development, wherein after photoetching is finished, the development is carried out in a five-thousandth NaOH solution, and then the silicon wafer is placed on a hot plate at the temperature of 115 ℃ for 40min for hardening.
12. And (3) patterning the metal film, putting the developed silicon wafer into etching liquid special for etching titanium, nickel and gold, and sequentially performing patterned etching on the film gold, nickel and titanium. Gold etching solution: KI: i is2：H20-4 g:1g:40 ml; nickel corrosive liquid: h3NO3：H2O is 3: 7; titanium corrosive liquid: HF: H2O＝1：100。
13. And (4) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and performing standard cleaning.
14. Spin-coating a photoresist, spin-coating a layer of photoresist on the surface of one side of the first silicon wafer supporting layer, wherein the model of the photoresist is AZ4620, and then placing the silicon wafer on a hot plate at 95 ℃ for soft baking.
15. And (3) exposing and photoetching, namely selecting a mask plate for manufacturing the drainage holes 32, photoetching the drainage holes 32, and putting the first silicon wafer into a photoetching machine for photoetching.
16. And (3) pattern development, wherein after photoetching is finished, the pattern development is carried out in a five-thousandth NaOH solution, and then the first silicon wafer is placed on a hot plate at the temperature of 115 ℃ for 40min for hardening.
17. ICP dry etching: the drainage holes 32 are etched to a depth of 300 μm.
18. And (3) wet photoresist removal: and removing the residual photoresist by using a degumming agent, and performing standard cleaning.
19. ICP dry etching: the pressure chamber 31 is etched until the oxide layer.
20. Marking: and marking a cross mark used for aligning bonding on the surface of the second silicon wafer supporting layer.
21. Aligning and bonding: and bonding the first silicon wafer and the second silicon wafer into a whole through a metal film by utilizing the surface of the second silicon wafer supporting layer and the alignment mark of the first silicon wafer device layer so as to form a closed flow channel structure.
22. Thinning a second silicon wafer: and sending the bonded whole into a bonding machine, and etching and thinning the second silicon wafer supporting layer until an oxide layer is formed.
23. Removing an oxide layer of the second silicon wafer: and rinsing the bonded second silicon wafer in a diluted hydrofluoric acid solution to remove the oxide layer.
24. Spin-coating a photoresist, spin-coating a layer of photoresist on the surface of the second silicon wafer with the oxide layer removed, wherein the model of the photoresist is AZ4620, and then placing the silicon wafer on a hot plate at 95 ℃ for soft baking.
25. And (3) exposing and photoetching, namely selecting a mask plate for manufacturing the ink supply holes, photoetching the ink supply holes 21, and putting the mask plate into a photoetching machine for photoetching.
26. And (3) pattern development: after the photoetching is finished, developing is carried out in a five-thousandth NaOH solution, and then the silicon wafer is placed on a hot plate at the temperature of 115 ℃ for hardening for 40 min.
27. ICP dry etching: the ink supply hole 21 was etched to an etching depth of 20 μm.
28. And (4) scribing and separating, namely separating and scribing according to a scribing track reserved by the first silicon chip.
29. Piezoelectric ceramic bonding: the upper surface of a printing head vibrating plate 2 is coated with epoxy resin colloid in a large area according to piezoelectric ceramics and the like by using a glue coating mode of screen printing, and the formula of the colloid is as follows: epoxy resin: amide resin: and (3) absolute ethyl alcohol is 5:2:1 (volume ratio), the piezoelectric ceramic is subjected to positioning adhesive bonding according to the vibration alignment mark, and the piezoelectric ceramic is placed into a vacuum drying oven after adhesive bonding and is baked for 60min at 80 ℃ to be cured.
30. And patterning the piezoelectric ceramic, and cutting and separating the piezoelectric ceramic body and the upper electrode according to the alignment mark by using a laser processing mode.
Claims (7)
1. The manufacturing method for manufacturing the piezoelectric MEMS ink-jet printing head is characterized by comprising a piezoelectric ceramic layer (1), a vibrating plate (2) and a nozzle plate (3) which are sequentially arranged from top to bottom, wherein an ink supply hole (21) is formed in the vibrating plate (2), a pressure cavity (31), a drainage hole (32) and a nozzle hole (33) which are communicated with each other are sequentially arranged on the nozzle plate (3) from top to bottom, and the pressure cavity (31) is communicated with the ink supply hole (21);
the pressure cavity (31) comprises two main ink channels (311) arranged at the position close to the side of the nozzle plate (3) and two groups of micro-channel structures arranged between the two main ink channels (311);
the main ink channel (311) is communicated with the ink supply hole (21), each group of micro-channel structure comprises a filtering channel (312) and a flow channel (313) which are connected, the filtering channel (312) is of a broken line structure, the inlet of the filtering channel (312) is communicated with the main ink channel (311), the outlet of the filtering channel (312) is communicated with the flow channel (313), and the flow channel (313) is communicated with the drainage hole (32);
the method comprises the following steps:
1) production of a nozzle plate (3)
1.1) nozzle plate (3) processing Material selection
According to the thickness requirement of the nozzle plate (3), selecting a first SOI silicon wafer with a proper specification as a processing raw material of the nozzle plate (3); the first SOI silicon chip comprises a device layer, an oxidation layer and a supporting layer, wherein the oxidation layer is positioned between the device layer and the supporting layer;
1.2) production of nozzle opening (33)
Etching a nozzle hole (33) on a device layer of the first SOI silicon wafer by adopting an MEMS process;
1.3) manufacture of pressure cavity (31) and drainage hole (32)
1.3.1) manufacturing a metal film layer on the surface of the first SOI silicon chip supporting layer;
the metal thin film layer comprises a titanium film, a nickel film and a gold film which are grown in sequence, wherein the thickness of the titanium film is 30nm, the thickness of the nickel film is 40nm, and the thickness of the gold film is 500 nm;
1.3.2) etching the appearance of the pressure cavity (31) on the metal film layer by adopting an MEMS (micro electro mechanical systems) process;
1.3.3) etching partial drainage holes (32) on the supporting layer by adopting an MEMS (micro-electromechanical systems) process;
1.3.4) etching a pressure cavity (31) and a complete drainage hole (32) on the supporting layer by using the metal film layer as a masking layer and adopting ICP dry etching;
2) bonding of
2.1) selecting a second SOI silicon wafer with a proper specification as a processing raw material of the vibrating plate (2) according to the thickness requirement of the vibrating plate (2);
2.2) bonding a device layer of a second SOI silicon chip with the first SOI silicon chip by using a residual metal film layer of the first SOI silicon chip after the pressure cavity (31) is etched as a bonding metal layer;
3) manufacturing of ink supply hole on vibrating plate (2)
3.1) thinning the bonded second SOI silicon wafer from one side of the second SOI silicon wafer support layer until an oxide layer is formed;
3.2) continuously removing the oxide layer of the second SOI silicon wafer;
3.3) etching an ink supply hole (21) on the device layer of the second SOI silicon chip by adopting an MEMS process;
4) carrying out scribing separation on the first SOI silicon wafer;
5) gluing a second SOI silicon chip to manufacture a piezoelectric ceramic layer (1);
wherein, the gluing adopts a silk-screen printing gluing mode, and the formula of the glue used for gluing is epoxy resin: amide resin: absolute ethyl alcohol, and the volume ratio is 5:2: 1.
2. The method of claim 1, wherein:
the thickness of the first SOI silicon wafer in the step 1.1) is 400+1+50 μm, wherein the thickness of the device layer is 50 μm, the thickness of the oxide layer is 1 μm, and the thickness of the support layer is 400 μm;
the thickness of the second SOI silicon wafer in step 2.1) is 230+1+20 μm, wherein the thickness of the device layer is 20 μm, the thickness of the oxide layer is 1 μm, and the thickness of the support layer is 230 μm.
3. The method of claim 2, wherein:
the step 1.2) is as follows:
1.2.1) spin coating photoresist: spin-coating a layer of photoresist on the surface of the device layer of the first SOI silicon wafer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.2.2) exposure lithography: a nozzle hole (33) is utilized to mask a plate, and the first SOI silicon wafer is placed in a photoetching machine to be photoetched to form the shape of the nozzle hole (33);
1.2.3) graphic development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.2.4) ICP dry etching: after development, dry etching is carried out until the oxide layer is etched, and a nozzle hole (33) is formed;
1.2.5) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and cleaning.
4. The method of claim 3, wherein:
the step 1.3.2) is specifically as follows:
1.3.2.1) spin-on resist: spin-coating a layer of photoresist on the surface of the metal film layer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.3.2.2) exposure lithography: utilizing a pressure cavity (31) to mask a plate, and putting the first SOI silicon wafer into a photoetching machine for photoetching to obtain the appearance of the pressure cavity (31);
1.3.2.3) graphic development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.3.2.4) metal film patterning: sequentially putting the developed silicon wafer into a titanium corrosive liquid, a nickel corrosive liquid and a gold corrosive liquid, and carrying out graphical corrosion on the gold, the nickel and the titanium films, so that the appearance of the pressure cavity (31) is etched in the metal film layer;
1.3.2.5) removing the photoresist by a wet method, removing the residual photoresist by using a photoresist remover, and cleaning.
5. The method of claim 4, wherein:
the step 1.3.3) is specifically as follows:
1.3.3.1) spin-on resist: spin-coating a layer of photoresist on the surface of one side of the first SOI silicon wafer supporting layer, and placing the first SOI silicon wafer on a hot plate for soft baking;
1.3.3.2) exposure lithography: a mask plate is masked by using the drainage holes (32), and the first SOI silicon wafer is placed in a photoetching machine for photoetching;
1.3.3.3) pattern development: after photoetching, putting the first SOI silicon chip in NaOH solution for developing, and then putting the first SOI silicon chip on a hot plate for hardening;
1.3.3.4) ICP dry etching: etching the drainage holes (32) after development, wherein the etching depth is 300 mu m;
1.3.3.5) wet stripping: and removing the residual photoresist by using a degumming agent, and cleaning.
6. The method of claim 5, wherein:
the step 3.3) is specifically as follows:
3.3.1) spin coating photoresist: spin-coating a layer of photoresist on the surface of the second silicon wafer with the oxide layer removed, and then placing the silicon wafer on a hot plate for soft baking;
3.3.2) exposure lithography: selecting a mask plate for manufacturing the ink supply hole, photoetching the ink supply hole, and putting the mask plate into a photoetching machine for photoetching;
3.3.3) graphic development: developing in NaOH solution after photoetching is finished, and then putting a second silicon wafer on a hot plate for hardening;
3.3.4) ICP dry etching: and etching the ink supply hole (21) to a depth of 20 μm.
7. The method of claim 6, wherein:
the type of the photoresist used in steps 1.2.1), 1.3.2.1), 1.3.3.1) and 3.3.1) is AZ4620, and the temperature of the hot plate is 95 ℃;
the mass concentration of the NaOH solution in steps 1.2.3), 1.3.2.3), 1.3.3.3) and 3.3.3) was five thousandths of a thousand, and the temperature of the hot plate was 115 ℃.
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| CN114633560B (en) * | 2022-03-30 | 2022-11-11 | 山东中康国创先进印染技术研究院有限公司 | Ink jet printing head and ink jet printing equipment |
| CN114771102B (en) * | 2022-04-21 | 2023-01-03 | 杭州电子科技大学 | Piezoelectric ink-jet printer nozzle and preparation method thereof |
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