CN106945404B - Hot jet-printing head based on graphene-carbon nano tube composite structure and preparation method thereof - Google Patents
Hot jet-printing head based on graphene-carbon nano tube composite structure and preparation method thereof Download PDFInfo
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- CN106945404B CN106945404B CN201710200069.2A CN201710200069A CN106945404B CN 106945404 B CN106945404 B CN 106945404B CN 201710200069 A CN201710200069 A CN 201710200069A CN 106945404 B CN106945404 B CN 106945404B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
Abstract
The invention discloses a kind of hot jet-printing heads based on graphene composite structure of carbon nano tube and preparation method thereof, using ICP techniques and the surface planarisation technique of PDMS filling zanjons, main channel, ink jet chambers are prepared in silicon chip substrate, into ink passage, nozzle, inkjet channel；Using anode linkage technique, using graphene fragment as middle layer, substrate of glass and silicon chip substrate are bonded.With ink jet chambers by being connected into ink passage, ink feed channel depth is less than ink jet chambers depth for main channel；Nozzle is arranged on ink jet chambers bottom；Carbon nanotube graphene composite structure microbubble generator array and the preparation of carbon nanotube array of temperature sensor correspond to the region of ink jet chambers in substrate of glass, and are set towards ink jet chambers.The nozzle feed liquor closes that reliable, bond strength is high, spray printing chamber not easy to pollute, and precision is easily controllable during preparation.
Description
Technical field
The invention belongs to MEMS thermal jets to print technical field, and graphene-carbon nanometer is based on more particularly, to one kind
Hot jet-printing head of pipe composite construction and preparation method thereof.
Background technology
Spray printing imaging technique has become large format Digital printing, digital photos printing, digital printing, color digital are drawn a design
And the color hard copy technology of home and office intranets colour output system first choice, acquisition be widely applied with huge business into
Work(.Other than inkjet printing, the differential that Printing techniques also are able to provide non-contacting plurality of liquid is matched, and has very extensive answer
With for example：Biofluid printing makes liquid crystal display colored filter, digitized manufacturing system PCB, drug injection and fuel note
Enter etc..It is expected to build integrated system (such as bioengineered tissue, big planar flexible flat device with sophisticated functions
Deng) provide it is a kind of from bottom to top, simple and effective embodiment.In a foreseeable future, high reliability, low cost of manufacture and
Micro- sprayed printed system of high-performance (high graphical quality, high frequency response and high spatial resolution) will be paid close attention to and
Commercial field and other special dimensions are used widely.
In existing Printing techniques, bubble type spray printing is a kind of easy Printing techniques based on micro-heater.Microbubble
Generator is the core of hot sprayed printed system, mostly uses the micro-heater based on traditional metal materials at present, and power consumption is larger.Metal
Carbon nanotube (CNT) is a kind of excellent microwave conductor, and theoretically the turn-on frequency of the carbon nanotube of single wall has report up to THz
Road actually reaches GHz.
It is the most important function of jet-printing head to generate spray printing liquid.Jet-printing head includes liquid-supplying system and injection liquid generates
System.Liquid-supplying system ensures to treat spray printing liquid to the offer of jet-printing head micro chamber according to certain pressure (static pressure)；And spray printing liquid
Body generation system is actually a kind of pulse generation system, i.e., according to certain working frequency (digit pulse) in microcavity
Indoor one pulse (dynamic pressure) of generation so as to treat that spray printing liquid squeezes away from nozzle, forms spray printing drop.
In various driving sources, thermal spray printing since manufacture craft is simple, be most application prospect method it
One, it has many advantages, such as very high spatial resolution, high-frequency response and low cost.Thermal technology is micro- using being produced on
The indoor microheater of chamber, is controlled by electric pulse, and heating increases fluid temperature, so as to make the liquid gas of heater surfaces
Change and generate bubble, liquid from nozzle is squeezed away and forms injection drop by the pressure generated with bubble parameters.Thermal spray printing
Device architecture is simple, and miniaturization is easy, can realize higher nozzle integrated level, while cost of manufacture is relatively low.
Patent ZL201010160465.5《Jet-printing head based on double-carbon nanotube microbubble generator and preparation method thereof》
Disclose jet-printing head based on double-carbon nanotube microbubble generator and preparation method thereof.The program has following deficiency：
(1) carbon nano-tube tiny bubble generator uses metal electrode, therebetween there are Schottky barrier, contact resistance compared with
Greatly.
(2) microfluidic structures use the method that wet etching and dry etching are combined, and are difficult to control machining accuracy.
(3) it is identical with the chamber depth of sprayed printed unit into ink passage, bubble valve close feed liquor exist closing loosely
Problem.
(4) using ultra-violet curing bonding method, bond strength is restricted for double microbubble generators and microfluidic structures；And
And spray printing chamber is easily polluted in the coating of uv-curable glue.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention is intended to provide a kind of feed liquor closes reliable, bonding
Intensity is high, spray printing chamber not easy to pollute, hot stamping nozzle easy to process and preparation method thereof.
To achieve the above object, the present invention provides a kind of hot jet-printing head based on graphene-carbon nano tube composite structure,
Including：Substrate of glass, silicon chip substrate, main channel, into ink passage, ink jet chambers, nozzle, inkjet channel, carbon nanotube-graphene
Composite construction microbubble generator array, carbon nanotube array of temperature sensor；Main channel is into ink passage, ink jet chambers
The cavity of silicon chip substrate upper surface, main channel and ink jet chambers are opened in by being connected into ink passage, and ink feed channel depth is small
In ink jet chambers depth；Inkjet channel is to be arranged on the cavity of silicon chip substrate lower surface, and inkjet channel is located at the ink jet chambers back side；
Nozzle is arranged on ink jet chambers bottom, connects ink jet chambers and inkjet channel；Carbon nanotube-graphene composite structure microbubble hair
Raw device array and the preparation of carbon nanotube array of temperature sensor correspond to the region of ink jet chambers in substrate of glass, and towards ink-jet chamber
Room is set；Substrate of glass and silicon chip substrate is seamless is bonded together.
Further, single graphene-carbon nano tube composite structure microbubble generator includes：It is arranged on substrate of glass table
First Graphene electrodes of a pair in face；First carbon nanotube of a pair of first Graphene electrodes of connection；By the first carbon nanotube two
End is fixed on the first SiO of a pair in a pair of first Graphene electrodes and substrate of glass2Mask layer.
Further, Single Carbon Nanotubes temperature sensor includes：It is arranged on a pair of metal electrodes of glass basic surface
Or a pair of second Graphene electrodes；Connect the second carbon nanotube of a pair of metal electrodes or a pair of second Graphene electrodes；By
Two carbon nanotube both ends be fixed in a pair of metal electrodes and substrate of glass or a pair of second Graphene electrodes and substrate of glass on
The 2nd SiO of a pair2Mask layer.
Further, substrate of glass and the middle layer of the seamless bonding of silicon chip substrate are graphene fragment.
To achieve these goals, the present invention also provides a kind of preparation method of aforementioned hot jet-printing head, including walking as follows
Suddenly：
(1) graphene-carbon nano tube composite structure microbubble generator array, carbon nanotube temperature are prepared on the glass substrate
Spend sensor array；
(2) it using ICP techniques and the surface planarisation technique of PDMS filling zanjons, is prepared in silicon chip substrate main logical
Road, ink jet chambers, into ink passage, nozzle, inkjet channel；
(3) using anode linkage technique, using graphene fragment as middle layer, substrate of glass that step (1) is obtained and
The silicon chip substrate bonding that step (2) obtains.
Further, carbon nanotube temperature sensor uses metal electrode, and step (1) includes following sub-step：
(1.1) using magnetron sputtering and stripping technology, it is micro- that graphene-carbon nano tube composite structure is prepared on the glass substrate
The first test electrode, the second test electrode of carbon nanotube array of temperature sensor and the carbon nanometer of bubble generator array
The metal electrode of pipe array of temperature sensor；First test electrode, the second test electrode, metal electrode thickness for 100~
200nm；The spacing of metal electrode is 1~6 μm, and width is 1~5 μm；Metal electrode is identical with the second test number of electrodes, one by one
It is correspondingly connected with；
(1.2) graphene of CVD growth on copper foil is transferred to by substrate of glass using the wet method shifting process of spin coating PMMA
On, the first stone for preparing carbon nanotube-graphene composite structure microbubble generator array is etched through the RIE of photoetching and oxygen
Black alkene electrode；The spacing of first Graphene electrodes is 1~6 μm, and width is 1~5 μm, the first Graphene electrodes and the first test electricity
Number of poles is identical, connects one to one；
(1.3) AC signal of 1MHz, 16V are loaded on microbubble generator test electrode, then carbon nanotube is suspended
Drop is between the first Graphene electrodes of a pair of each graphene-carbon nano tube composite structure microbubble generator and every
Between a pair of metal electrodes of a carbon nanotube array of temperature sensor, by the micro- gas of each graphene-carbon nano tube composite structure
The first carbon nanotube steeped in generator is connected with corresponding a pair of first Graphene electrodes；By each carbon nanotube temperature sensing
The second carbon nanotube in device is connected with corresponding a pair of metal electrodes；
(1.4) in the junction of the first carbon nanotube and the first Graphene electrodes, sputtering thickness is the first of 60~200nm
SiO2Mask layer, in the second carbon nanotube and the junction of metal electrode, the 2nd SiO that sputtering thickness is 60~200nm2Mask
Layer.
Further, carbon nanotube temperature sensor does electrode using graphene, and step (1) includes following sub-step：
(1.1) using magnetron sputtering and stripping technology, in substrate of glass after cleaning graphene-carbon nano tube is prepared to answer
Close the first test electrode of structure microbubble generator array, the second test electrode of carbon nanotube array of temperature sensor；The
One test electrode, the second test thickness of electrode are 100~200nm；
(1.2) graphene of CVD growth on copper foil is transferred to by substrate of glass using the wet method shifting process of spin coating PMMA
On, the first stone for preparing graphene-carbon nano tube composite structure microbubble generator array is etched through the RIE of photoetching and oxygen
Second Graphene electrodes of black alkene electrode and carbon nanotube array of temperature sensor；First Graphene electrodes and the first test electricity
Number of poles is identical, connects one to one；Second Graphene electrodes are identical with the second test number of electrodes, connect one to one；
(1.3) 1MHz, the AC signal of 16V are loaded, then carbon nano tube suspension is dropped in into each stone on test electrode
Between the first Graphene electrodes of a pair of black alkene-composite structure of carbon nano tube microbubble generator and each carbon nanotube temperature
It spends between the second Graphene electrodes of a pair of sensor array, each graphene-carbon nano tube composite structure microbubble is occurred
The first carbon nanotube in device is connected with corresponding a pair of first Graphene electrodes；It will be in each carbon nanotube temperature sensor
Second carbon nanotube is connected with corresponding a pair of second Graphene electrodes；
(1.4) in the junction of the first carbon nanotube and the first Graphene electrodes, sputtering thickness is the first of 60~200nm
SiO2Mask layer, in the junction of the second carbon nanotube and the second Graphene electrodes, sputtering thickness is the second of 60~200nm
SiO2Mask layer.
Further, carbon nano tube suspension presses 0.001~0.05mg/ml by carbon nanotube and effumability organic solvent
Ratio mixes；
Further, main channel, ink jet chambers are prepared in step (2), into ink passage, nozzle the step of it is as follows：
(2.1) using standard cleaning technique using twin polishing Wafer Cleaning totally as silicon chip substrate, in silicon chip substrate
Surface magnetic control sputtering metal mask layer；
(2.2) the spin coating photoresist on metal mask layer obtains main channel and nozzle on a photoresist by exposing, developing
Figure corrodes to obtain the metallic film with main channel and nozzle figure, and with metallic film and photoetching with ceric ammonium nitrate solution
Glue is mask, and main channel and nozzle are etched in silicon chip substrate upper surface with ICP lithographic methods；Residual photoetching is removed with acetone
Glue, ammonium ceric nitrate removal kish film；
(2.3) main channel obtained with PDMS filling steps (2.2) and nozzle, utilize step (2.1), the side of (2.2)
Method etches ink jet chambers, and residual photoresist, ammonium ceric nitrate removal kish film are removed with acetone；
(2.4) ink jet chambers obtained with PDMS filling steps (2.3), then sputtered metal film, spin coating photoresist；
(2.5) it is etched using step (2.1), the method for (2.2) into ink passage；It is removed and led with oxygen plasma lithographic method
The PDMS filled in channel, nozzle and ink jet chambers；
(2.6) it is sputtered again using step (2.1) method, photoetching and wet etching are carried in silicon chip substrate lower surface
The metallic film of inkjet channel figure, and using the metallic film and photoresist as mask, with ICP lithographic methods under silicon chip substrate
Surface etch goes out inkjet channel；
(2.7) acetone removal residual photoresist, ammonium ceric nitrate removal kish film.
Further, using graphene fragment as the anode linkage technique of middle layer in step (3), including following sub-step
Suddenly：
(3.1) graphene fragment is transferred to step (2) with the wet method shifting process of spin coating PMMA or step (2.7) obtains
Silicon chip substrate surface white space；
(3.2) substrate of glass that step (1) obtains is fixed on clean transparent glass plate, as litho machine alignment
Mask plate；
(3.3) the substrate of glass alignment that the silicon chip substrate and step (3.2) obtained step (3.1) with litho machine obtains is simultaneously
Fitting makes carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube array of temperature sensor correspond to spray
The position of ink chamber, and towards ink jet chambers, obtain hot stamping nozzle semi-finished product；
(3.4) the hot stamping nozzle semi-finished product that step (3.3) obtains are placed on press machine；
(3.5) temperature of press machine is raised to 300~350 DEG C, 600~900V direct currents is passed through to hot stamping nozzle semi-finished product
Pressure continues 10min, completes bonding.
Compared with prior art, advantage for present invention and effect are as follows：
(1) carbon nano-tube tiny bubble generator has higher electron transfer with graphene substituted metal electrode, graphene
Rate, band gap zero, and there is similar lattice structure to carbon nanotube, it is the ideal electrode of carbon nanotube.Graphene
It is in direct contact by Van der Waals force and carbon nanotube, forms carbon-to-carbon contact, the Xiao Te lower than metal film electrode can be obtained
Base potential barrier reduces the contact resistance of microbubble generator, so as to reduce the power consumption of microbubble generator.
(2) carbon nanotube temperature sensor is introduced, the environment temperature in ink jet chambers is detected, can be microbubble
Generator realizes that feedback control provides foundation.
(3) ink feed channel depth is smaller than the chamber of sprayed printed unit, can be completely closed when bubble valve closes feed liquor.Due to micro-
Fluidic structures are all processed using ICP techniques, while employ a kind of PDMS (dimethyl silicone polymer) filling zanjons
Surface planarisation technique, obtained microfluidic structures are complete.
(4) anode linkage is carried out using graphene fragment as middle layer so that machined the silicon chip of microfluidic structures respectively
With the seamless bonding of substrate of glass of microbubble generator and sensor array.
Description of the drawings
Fig. 1 is the schematic cross-sectional view the present invention is based on the hot jet-printing head of graphene-carbon nano tube composite structure；
Fig. 2 is graphene-carbon nano tube composite structure microbubble generator and carbon nanotube temperature in substrate of glass in Fig. 1
Spend the schematic diagram of sensor；
Fig. 3 is the perspective cross-sectional schematic diagram of silicon chip substrate；
Fig. 4 is the vertical view of silicon chip substrate；
Fig. 5 is the decomposition diagram of graphene-carbon nano tube composite structure microbubble generator；
Fig. 6 is the assembling schematic diagram of Fig. 5；
Fig. 7 is the decomposition diagram of carbon nanotube temperature sensor；
Fig. 8 is the assembling schematic diagram of Fig. 7；
Fig. 9 is the anode linkage method schematic diagram that middle layer is done with graphene fragment；
Figure 10 (a)~10 (d) is the process flow diagram for the anode linkage method that middle layer is done with graphene fragment；
Figure 11 (a)~11 (d) is the preparation method flow chart based on the hot jet-printing head of graphene-carbon nano tube composite structure,
Wherein：
Figure 11 (a) graphene-carbon nano tube composite structures microbubble generator and based on metal electrode carbon nanotube temperature
Spend the preparation flow figure of sensor；
The preparation stream of microbubble generator and temperature sensor of the Figure 11 (b) based on graphene-carbon nano tube composite structure
Cheng Tu；
The preparation flow figure of Figure 11 (c) microfluidic structures；
Figure 11 (d) does the anode linkage flow chart of middle layer with graphene fragment.
In all the appended drawings, identical reference numeral is used for representing identical element or structure, wherein：
1- substrate of glass, 2- silicon chip substrates, 3- main channels, 4- is into ink passage, 5- ink jet chambers, 6- nozzles, 7- carbon nanometers
Pipe-graphene composite structure microbubble generator array, the first Graphene electrodes of 71-, the first carbon nanotubes of 72-, 73- first
SiO2Mask layer, 8- carbon nanotube array of temperature sensor, 81- metal electrodes or the second Graphene electrodes, 82- the second carbon nanometers
Pipe, the 2nd SiO of 83-2Mask layer, 9- graphene fragments.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
Hot jet-printing head provided by the invention based on graphene-carbon nano tube composite structure includes microfluidic structures, graphite
Alkene-composite structure of carbon nano tube microbubble generator and carbon nanotube temperature sensor；Wherein microfluidic structures are to utilize silicon
Processing technology is produced on silicon chip, by main channel 3, ink jet chambers 5, into ink passage 4, nozzle 6, inkjet channel (non-label) structure
Into.The cross-section structure of hot jet-printing head as shown in Figure 1, including：Substrate of glass 1, silicon chip substrate 2, main channel 3, into ink passage 4, spray
Ink chamber 5, nozzle 6, inkjet channel, carbon nanotube-graphene composite structure microbubble generator array 7, carbon nanotube temperature
Sensor array 8.Substrate of glass 1 and silicon chip substrate 2 is seamless is bonded together；Microbubble generator 7 and carbon nanotube temperature pass
Sensor array 8 is prepared in substrate of glass 1, positioned at the top of ink jet chambers 5；Main channel 3 and ink jet chambers 5 are by into ink passage
4 connections.
Main channel 3 is the cavity for being opened in 2 upper surface of silicon chip substrate into ink passage 4, ink jet chambers 5,3 He of main channel
Ink jet chambers 5 are less than 5 depth of ink jet chambers by being connected into ink passage 4, and into 4 depth of ink passage；Inkjet channel is is arranged on
The cavity of 2 lower surface of silicon chip substrate, inkjet channel are located at 5 back side of ink jet chambers；Nozzle 6 is arranged on 5 bottom of ink jet chambers, connection
Ink jet chambers 5 and inkjet channel；Carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube temperature sensing
Prepared by device array corresponds to the region of ink jet chambers 5, and set towards ink jet chambers 5 in substrate of glass 1.Substrate of glass 1 and silicon chip
The middle layer of 2 seamless bonding of substrate is graphene fragment 9.
Graphene-carbon nano tube composite structure microbubble generator 7 is using carbon nanotube as basic heating element, graphene
Replace traditional metal electrodes, one layer of microbubble generator test electrode connection Graphene electrodes are sputtered using the method for magnetron sputtering
And external source, and sputter one layer of SiO2In Graphene electrodes and carbon nanotube contact site, fixed and protective effect is played.It is single
The structure of a graphene-carbon nano tube composite structure microbubble generator 7 as shown in figs.5 and 6, including：It is arranged on glass
First Graphene electrodes of a pair 71 on 1 surface of substrate；First carbon nanotube 72 of a pair of first Graphene electrodes 71 of connection；By
One carbon nanotube, 72 both ends are fixed on the first SiO of a pair in a pair of first Graphene electrodes 71 and substrate of glass 12Mask layer
73。
Graphene-carbon nano tube composite structure microbubble generator 7 does electrode using graphene, and property is stablized, overcome
The shortcomings that traditional metal electrodes microbubble generator is easily electrolysed or corroded effectively extends the service life of microbubble generator.More
Importantly, Graphene electrodes have higher electron mobility, band gap zero, and have similar crystalline substance to carbon nanotube
Lattice structure is the ideal electrode of carbon nanotube.Graphene is in direct contact by Van der Waals force and carbon nanotube, is formed carbon-to-carbon and is connect
It touches, the Schottky barrier lower than metal film electrode can be obtained, the contact resistance of microbubble generator is reduced, so as to drop
The low power consumption of microbubble generator.
Carbon nanotube temperature sensor 8 it is similary with microbubble generator array preparation in substrate of glass 1, structure with it is micro-
Bubble generator is identical, and only grapheme material, which had both may be used, in its electrode can also use metal material.Carbon nanotube temperature
The cellular construction of sensor as shown in Figure 7 and Figure 8, including：It is arranged on a pair of metal electrodes 81 on 1 surface of substrate of glass；Even
Connect the second carbon nanotube 82 of a pair of metal electrodes 81 or a pair of second Graphene electrodes 81；Second carbon nanotube, 82 both ends are consolidated
The 2nd SiO of a pair being scheduled in a pair of metal electrodes 81 and substrate of glass 12Mask layer 83.A pair of metal electrodes 81 is in other realities
It can also be a pair of second Graphene electrodes 81 to apply in example.
Radial direction phon scattering caused by the one-dimensional tubular structure of carbon nanotube limits carbon nanotube radially to ring around
Border and the heat transfer of substrate, in an axial direction based on heat transfer result in high density Joule heat in carbon nanotube.Using carbon nanometer
Pipe makes it be operated in higher temperature as the sensing element in temperature sensor, highdensity Joule heat, so as to there is higher
Sensitivity.The temperature resistance characteristic of carbon nanotube temperature sensor discloses the variation of the environment temperature in ink jet chambers, obtains
Environment temperature before and after bubble nucleating and ink-jet in ink jet chambers contributes to the factors such as heat dissipation caused by analyzing water, can be more
The microenvironment situation in sprayed printed unit is understood well, and the feedback for microbubble generator control circuit provides foundation.
The preparation method of above-mentioned hot jet-printing head mainly includes the following steps：
1st step prepares graphene-carbon nano tube composite structure microbubble generator, carbon nanotube temperature on a glass substrate
Spend sensor array；
2nd step fills the surface planarisation technique of zanjon using ICP techniques and PDMS (dimethyl silicone polymer),
Microfluidic structures are prepared on silicon chip；Microfluidic structures include main channel, ink jet chambers, into ink passage, nozzle, inkjet channel；
3rd step uses the anode linkage technique using graphene fragment as middle layer, by glass and wafer bonding.Bonding
Method is as schemed as shown in 9,10, and graphene fragment 9 is located among substrate of glass 1 and silicon chip substrate 2, in substrate of glass 1 and silicon chip
Apply high pressure on substrate 2, high temperature is bonded.
The preparation of microfluidic structures all employs ICP techniques in hot jet-printing head preparation method provided by the invention, simultaneously
A kind of surface planarisation technique of PDMS (dimethyl silicone polymer) filling zanjons is additionally used, effectively improves main channel side
The etching effect of edge ensure that the integrality of each structure.In addition, use the anode linkage using graphene fragment as middle layer
Technique so that silicon chip substrate and the substrate of glass of microbubble generator and sensor array for being prepared for microfluidic structures respectively are real
Now reliable bonding.
More specifically, prepare the above-mentioned hot jet-printing head method based on graphene-carbon nano tube composite structure, step packet
It includes：
Step 1：Graphene-carbon nano tube composite structure microbubble generator and carbon nanometer are prepared in substrate of glass 1
Pipe array of temperature sensor；Wherein, graphene may be used in carbon nanotube temperature sensor or metal material does electrode.
As shown in fig. 11a, to prepare graphene-carbon nano tube in substrate of glass 1 according to step (1.1)~(1.4) compound
Structure microbubble generator array and carbon nanotube array of temperature sensor；When carbon nanotube temperature sensor 8 uses metal
During electrode, specific sub-step is as follows：
(1.1) using magnetron sputtering and stripping technology, graphene-carbon nano tube composite structure is prepared in substrate of glass 1
First test electrode (not shown) of microbubble generator array and the second test electricity of carbon nanotube array of temperature sensor
Pole (not shown) and metal electrode, first test electrode, second test electrode, metal electrode thickness be 100~200nm；Gold
The spacing for belonging to electrode is 1~6 μm, and width is 1~5 μm；Metal electrode and the second test number of electrodes are identical, the company of one-to-one correspondence
It connects；
(1.2) graphene of CVD growth on copper foil is transferred to by substrate of glass 1 using the wet method shifting process of spin coating PMMA
On, the first stone for preparing carbon nanotube-graphene composite structure microbubble generator array is etched through the RIE of photoetching and oxygen
Black alkene electrode；The spacing of first Graphene electrodes is 1~6 μm, and width is 1~5 μm, the first Graphene electrodes and the first test electricity
Number of poles is identical, connects one to one；
(1.3) AC signal of 1MHz, 16V are loaded on microbubble generator test electrode, then carbon nanotube is suspended
Drop is between the first Graphene electrodes of a pair of each graphene-carbon nano tube composite structure microbubble generator and every
Between a pair of metal electrodes of a carbon nanotube array of temperature sensor, carbon nano tube suspension is by carbon nanotube and effumability
Organic solvent (such as absolute ethyl alcohol) is mixed in 0.001~0.05mg/ml ratios；By alternating voltage at pairs of two
Non-uniform electric field is generated between first Graphene electrodes, promotes the first carbon nanotube to shifting among corresponding a pair of first graphene
It is dynamic, after the volatilization of effumability organic solvent, the first carbon in each graphene-carbon nano tube composite structure microbubble generator
Nanotube is connected with corresponding a pair of first Graphene electrodes；Similarly, by the second carbon in each carbon nanotube temperature sensor
Nanotube is connected with corresponding a pair of metal electrodes；The purpose for preparing carbon nano tube suspension is that carbon nanotube is made to be in suspension
State, so as to move freely；
(1.4) in the junction of the first carbon nanotube and the first Graphene electrodes, sputtering thickness is the first of 60~200nm
SiO2Mask layer, in the second carbon nanotube and the junction of metal electrode, the 2nd SiO that sputtering thickness is 60~200nm2Mask
Layer.
As shown in figure 11b, in another embodiment, carbon nanotube temperature sensor can also do electrode with graphene, this
When, step 1 includes following sub-step：
(1.1) using magnetron sputtering and stripping technology, in substrate of glass after cleaning graphene-carbon nano tube is prepared to answer
Close structure microbubble generator array first tests the second of electrode (not shown) and carbon nanotube array of temperature sensor
Electrode (not shown) is tested, the first test electrode, the second test thickness of electrode are 100~200nm；
(1.2) graphene of CVD growth on copper foil is transferred to by substrate of glass using the wet method shifting process of spin coating PMMA
On, the first stone for preparing graphene-carbon nano tube composite structure microbubble generator array is etched through the RIE of photoetching and oxygen
Second Graphene electrodes of black alkene electrode and carbon nanotube array of temperature sensor；First Graphene electrodes and the first test electricity
Number of poles is identical, connects one to one；Second Graphene electrodes are identical with the second test number of electrodes, connect one to one；
(1.3) 1MHz, the AC signal of 16V are loaded, then carbon nano tube suspension is dropped in into each stone on test electrode
Between the first Graphene electrodes of a pair of black alkene-composite structure of carbon nano tube microbubble generator and each carbon nanotube temperature
It spends between the second Graphene electrodes of a pair of sensor array, carbon nano tube suspension is organic molten with effumability by carbon nanotube
Agent (such as absolute ethyl alcohol) is mixed in 0.001~0.05mg/ml ratios；By alternating voltage in two pairs of the first stones
Non-uniform electric field is generated between black alkene electrode, the first carbon nanotube is promoted to be treated to movement among corresponding a pair of first graphene
After the volatilization of effumability organic solvent, the first carbon in each graphene-carbon nano tube composite structure microbubble generator is received
Mitron is connected with corresponding a pair of first Graphene electrodes；Similarly, the second carbon in each carbon nanotube temperature sensor is received
Mitron is connected with corresponding a pair of second Graphene electrodes；
(1.4) in the junction of the first carbon nanotube and the first Graphene electrodes, sputtering thickness is the first of 60~200nm
SiO2Mask layer, in the junction of the second carbon nanotube and the second Graphene electrodes, sputtering thickness is the second of 60~200nm
SiO2Mask layer.
Step 2：Microfluidic structures are prepared in silicon chip substrate 2.
Microfluidic structures are by main channel 3, and into ink passage 4, ink jet chambers 5, nozzle 6 is formed, all using ICP technique systems
It is standby；Meanwhile a kind of surface planarisation technique of PDMS (dimethyl silicone polymer) filling zanjons is additionally used, it effectively improves
The etching effect at main channel edge ensure that the integrality of the geometric figure of each structure.
As shown in fig. 11c, the specific process step for preparing microfluidic structures is as follows：
(2.1) using standard cleaning technique using twin polishing Wafer Cleaning totally as silicon chip substrate, in silicon chip substrate
Surface magnetic control sputtering metal mask layer；
(2.2) the spin coating photoresist on metal mask layer obtains main channel and nozzle on a photoresist by exposing, developing
Figure corrodes to obtain the metallic film with main channel and nozzle figure, and with metallic film and photoetching with ceric ammonium nitrate solution
Glue is mask, and main channel and nozzle are etched in silicon chip substrate upper surface with ICP lithographic methods；Residual photoetching is removed with acetone
Glue, ammonium ceric nitrate removal kish film；
(2.3) main channel obtained with PDMS filling steps (2.2) and nozzle, utilize step (2.1), the side of (2.2)
Method etches ink jet chambers, and residual photoresist, ammonium ceric nitrate removal kish film are removed with acetone；
(2.4) ink jet chambers obtained with PDMS filling steps (2.3), then sputtered metal film, spin coating photoresist；
(2.5) it is etched using step (2.1), the method for (2.2) into ink passage；It is removed and led with oxygen plasma lithographic method
The PDMS filled in channel, nozzle and ink jet chambers；
(2.6) it is sputtered again using step (2.1) method, photoetching and wet etching are carried in silicon chip substrate lower surface
The metallic film of inkjet channel figure, and using the metallic film and photoresist as mask, with ICP lithographic methods under silicon chip substrate
Surface etch goes out inkjet channel；
(2.7) acetone removal residual photoresist, ammonium ceric nitrate removal kish film.
Step 3：Substrate of glass is bonded with silicon chip.The anode linkage method using graphene fragment as middle layer is used,
So that it is prepared for the silicon chip of microfluidic structures and the seamless bonding of the substrate of glass of microbubble generator and sensor array respectively.
As illustrated in fig. 11d, the anode linkage technique using graphene fragment as middle layer is used, including following sub-steps：
(3.1) graphene is transferred to the silicon chip substrate for being prepared for microfluidic structures with the wet method shifting process of spin coating PMMA
Surface white space；
(3.2) graphene-carbon nano tube composite structure bubble generator, carbon nanotube array of temperature sensor will be prepared for
Substrate of glass be fixed on clean transparent glass plate, the mask plate as litho machine alignment；
(3.3) the substrate of glass alignment that the silicon chip substrate and step (3.2) obtained step (3.1) with litho machine obtains is simultaneously
Fitting makes carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube array of temperature sensor correspond to spray
The position of ink chamber, and towards ink jet chambers, obtain hot stamping nozzle semi-finished product；Script litho machine is to be used for photoetching, in this step
It is aligned using litho machine；
(3.4) heat that 1/ graphene fragment of substrate of glass, 9/ silicon chip substrate 2 after the alignment for obtaining step (3.3) is formed
Print nozzle semi-finished product are placed on press machine；
(3.5) temperature of press machine is raised to 300~350 DEG C, is passed through 600~900V DC voltages, continue 10min, it is complete
Into bonding.
For those skilled in the art is made to more fully understand the present invention, with reference to specific embodiment to the microbubble of the present invention
The preparation method of generator is described in detail.
【Embodiment 1】
(1) quartz glass is cleaned, by graphene-carbon nano tube composite structure as substrate using quartz glass
Microbubble generator, carbon nanotube array of temperature sensor are prepared on quartz glass, and process is：
(1.1) using magnetron sputtering, the nickel film that thickness is 100nm is formed, nickel electrode is formed using existing stripping technology；
The nickel electrode spacing of temperature sensor is 2 μm, and width is 4 μm；
(1.2) graphene of CVD growth on copper foil is transferred to by substrate of glass using the wet method shifting process of spin coating PMMA,
The Graphene electrodes of microbubble generator are prepared through the RIE of photoetching and oxygen etchings；The spacing of Graphene electrodes is 2 μm, wide
Spend is 4 μm；
(1.3) carbon nanotube and anhydrous ethanol solvent in 0.001mg/ml ratios are mixed, makes carbon nanotube equal through ultrasound
Even dispersion；By 1MHz, the alternating voltage of 16V is loaded into the nickel electrode on glass, with microsyringe by carbon nano tube suspension
It drips between electrode, when solvent is evaporated completely full-time, between electrode is connected and is located in electrode by carbon nanotube, removes powered up at this time
；
(1.4) using magnetron sputtering, the silicon dioxide film that thickness is 60nm is formed；
(2) technique in following processes and table 1 makes microfluidic structures in silicon chip substrate：
(2.1) using standard cleaning technique using twin polishing Wafer Cleaning totally as silicon chip substrate, front magnetron sputtering
One layer of Cr film；
(2.2) positive spin coating photoresist by main channel and nozzle pattern transfer to photoresist after exposure imaging, uses nitric acid
Cerium ammonium salt solution corrodes to obtain the Cr films of main channel and nozzle figure, and using Cr and photoresist as mask, is etched with ICP lithographic methods
Main channel and nozzle, acetone removal residual photoresist, ammonium ceric nitrate removal residual Cr films；
(2.3) with the main channel and nozzle formed after PDMS filling etchings, then one layer of Cr film of front sputtering, spin coating photoetching
Glue, photoetching and wet etching obtain the Cr films of ink jet chambers figure again, and using Cr films and photoresist as mask, are etched with ICP
Method etches ink jet chambers, and residual photoresist, ammonium ceric nitrate removal residual Cr films are removed with acetone；；
(2.4) with the ink jet chambers formed after PDMS filling etchings, then one layer of Cr film of front sputtering, spin coating photoresist；
(2.5) photoetching, wet etching obtain the Cr films of ink feed passageway pattern again, using Cr films and photoresist as mask, use
ICP lithographic methods are etched into ink passage, remove residual photoresist with acetone, ammonium ceric nitrate removal residual Cr films use oxygen plasma
The PDMS filled in lithographic method removal main channel, nozzle and ink jet chambers；
(2.6) one layer of Cr film is sputtered in silicon chip reverse side, one layer of photoresist of spin coating, photoetching, wet etching obtain reverse side again
The Cr films of structure graph, and using Cr films and photoresist as mask, inverse layer structure is etched with ICP lithographic methods；
(2.7) residual photoresist is removed with acetone, ammonium ceric nitrate removes kish film, completes the system of microfluidic structures
It is standby.
The technological parameter of table 1ICP etchings
(3) silicon chip of microfluidic structures and microbubble generator and the substrate of glass anode key of sensor array will be prepared for
It closes, process is：
(3.1) graphene is transferred to the silicon chip surface for being prepared for microfluidic structures with the wet method shifting process of spin coating PMMA
White space；
(3.2) glass that graphene-carbon nano tube composite structure bubble generator, carbon nanotube temperature sensor will be prepared for
Glass substrate is fixed on clean transparent glass plate, the mask plate as litho machine alignment；
(3.3) substrate of glass and silicon chip with microfluidic structures are aligned with litho machine；
(3.4) substrate of glass after alignment/graphene/silicon piece is placed on press machine；
(3.5) temperature is raised to 350 DEG C, is passed through 900V DC voltages, continue 10min.
【Embodiment 2】
(1) glass is cleaned, will be answered based on graphene-carbon nano tube as substrate using Pyrex7740 types glass
The microbubble generator and temperature sensor for closing structure are prepared on quartz glass, and process is：
(1.1) using magnetron sputtering, the titanium film that thickness is 200nm is formed, forming titanium using existing stripping technology tests
Electrode；
(1.2) using the graphene of CVD growth on the wet method shifting process of spin coating PMMA transfer copper foil to substrate of glass, warp
The RIE of photoetching and oxygen etches the Graphene electrodes for preparing microbubble generator and temperature sensor；The spacing of graphene
It it is 6 μm, width is 5 μm；
(1.3) carbon nanotube and anhydrous ethanol solvent in 0.05mg/ml ratios are mixed, makes carbon nanotube uniform through ultrasound
Dispersion；By 1MHz, the alternating voltage of 16V is loaded between the Ti electrode on glass, with microsyringe by carbon nano tube suspension
It drips between electrode, when solvent is evaporated completely full-time, between electrode is connected and is located in electrode by carbon nanotube, removes powered up at this time
；
(1.4) using magnetron sputtering, the silicon dioxide film that thickness is 200nm is formed；
(2) microfluidic structures are prepared using method in the same manner as in Example 1；
(3) the seamless key of substrate of glass of the silicon chip and microbubble generator and sensor array of microfluidic structures will be prepared for
It closes, process is：
(3.1) graphene is transferred to the silicon chip surface for being prepared for microfluidic structures with the wet method shifting process of spin coating PMMA
White space；
(3.2) glass that graphene-carbon nano tube composite structure bubble generator, carbon nanotube temperature sensor will be prepared for
Glass substrate is fixed on clean transparent glass plate, the mask plate as litho machine alignment；
(3.3) substrate of glass and silicon chip with microfluidic structures are aligned with litho machine；
(3.4) substrate of glass after alignment/graphene/silicon piece is placed on press machine；
(3.5) temperature is raised to 300 DEG C, is passed through 600V DC voltages, continue 10min.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made all within the spirits and principles of the present invention etc., should all include
Within protection scope of the present invention.
Claims (11)
1. a kind of hot jet-printing head based on graphene-carbon nano tube composite structure, which is characterized in that including：Substrate of glass, silicon chip
Substrate, main channel occur into ink passage, ink jet chambers, nozzle, inkjet channel, carbon nanotube-graphene composite structure microbubble
Device array, carbon nanotube array of temperature sensor；
Main channel is the cavity for being opened in silicon chip substrate upper surface into ink passage, ink jet chambers, and main channel and ink jet chambers lead to
It crosses and is connected into ink passage, and ink feed channel depth is less than ink jet chambers depth；Inkjet channel is is arranged on silicon chip substrate lower surface
Cavity, inkjet channel is located at the ink jet chambers back side；Nozzle is arranged on ink jet chambers bottom, connects ink jet chambers and ink-jet is led to
Road；
Carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube array of temperature sensor are prepared in glass
Substrate corresponds to the region of ink jet chambers, and is set towards ink jet chambers；
Substrate of glass and silicon chip substrate is seamless is bonded together.
2. a kind of hot jet-printing head based on graphene-carbon nano tube composite structure as described in claim 1, which is characterized in that
Single graphene-carbon nano tube composite structure microbubble generator includes：It is arranged on the first graphite of a pair of glass basic surface
Alkene electrode；First carbon nanotube of a pair of first Graphene electrodes of connection；First carbon nanotube both ends are fixed on a pair first
The first SiO of a pair in Graphene electrodes and substrate of glass2Mask layer.
3. a kind of hot jet-printing head based on graphene-carbon nano tube composite structure as described in claim 1, which is characterized in that
Single Carbon Nanotubes temperature sensor includes：It is arranged on a pair of metal electrodes of glass basic surface or a pair of second graphene electricity
Pole；Connect the second carbon nanotube of a pair of metal electrodes or a pair of second Graphene electrodes；Second carbon nanotube both ends are fixed
The 2nd SiO of a pair in a pair of metal electrodes and substrate of glass or in a pair of second Graphene electrodes and substrate of glass2Mask
Layer.
4. a kind of hot jet-printing head based on graphene-carbon nano tube composite structure as described in claim 1-3 any one,
It is characterized in that, the middle layer of substrate of glass and the seamless bonding of silicon chip substrate is graphene fragment.
5. a kind of preparation method of the hot jet-printing head based on graphene-carbon nano tube composite structure as described in claim 1,
It is characterized in that, includes the following steps：
(1) graphene-carbon nano tube composite structure microbubble generator array is prepared on the glass substrate, carbon nanotube temperature passes
Sensor array；
(2) using ICP techniques and the surface planarisation technique of PDMS filling zanjons, main channel, spray are prepared in silicon chip substrate
Ink chamber, into ink passage, nozzle, inkjet channel；
(3) using anode linkage technique, using graphene fragment as middle layer, substrate of glass and step that step (1) is obtained
(2) the silicon chip substrate bonding obtained.
6. preparation method as claimed in claim 5, which is characterized in that carbon nanotube temperature sensor uses metal electrode, step
Suddenly (1) includes following sub-step：
(1.1) using magnetron sputtering and stripping technology, graphene-carbon nano tube composite structure microbubble is prepared on the glass substrate
The first test electrode, the second test electrode of carbon nanotube array of temperature sensor and the carbon nanotube temperature of generator array
Spend the metal electrode of sensor array；First test electrode, second test electrode, metal electrode thickness be 100~200nm；
The spacing of metal electrode is 1~6 μm, and width is 1~5 μm；Metal electrode is identical with the second test number of electrodes, the company of one-to-one correspondence
It connects；
(1.2) graphene of CVD growth on copper foil is transferred in substrate of glass using the wet method shifting process of spin coating PMMA, passed through
The RIE of photoetching and oxygen etches the first graphene for preparing carbon nanotube-graphene composite structure microbubble generator array
Electrode；The spacing of first Graphene electrodes is 1~6 μm, and width is 1~5 μm, the first Graphene electrodes and the first test number of electrodes
It measures identical, connects one to one；
(1.3) AC signal of 1MHz, 16V are loaded on microbubble generator test electrode, then carbon nano tube suspension is dripped
Between the first Graphene electrodes of a pair of each graphene-carbon nano tube composite structure microbubble generator and each carbon
Between a pair of metal electrodes of nanotube array of temperature sensor, each graphene-carbon nano tube composite structure microbubble is sent out
The first carbon nanotube in raw device is connected with corresponding a pair of first Graphene electrodes；It will be in each carbon nanotube temperature sensor
The second carbon nanotube connected with corresponding a pair of metal electrodes；
(1.4) the first SiO for being 60~200nm in the junction of the first carbon nanotube and the first Graphene electrodes sputtering thickness2It covers
Film layer, in the second carbon nanotube and the junction of metal electrode, the 2nd SiO that sputtering thickness is 60~200nm2Mask layer.
7. preparation method as claimed in claim 5, which is characterized in that carbon nanotube temperature sensor does electricity using graphene
Pole, step (1) include following sub-step：
(1.1) using magnetron sputtering and stripping technology, graphene-carbon nano tube composite junction is prepared in substrate of glass after cleaning
First test electrode of structure microbubble generator array, the second test electrode of carbon nanotube array of temperature sensor；First surveys
Try electrode, the second test thickness of electrode is 100~200nm；
(1.2) graphene of CVD growth on copper foil is transferred in substrate of glass using the wet method shifting process of spin coating PMMA, passed through
The RIE of photoetching and oxygen etches the first graphene for preparing graphene-carbon nano tube composite structure microbubble generator array
Second Graphene electrodes of electrode and carbon nanotube array of temperature sensor；First Graphene electrodes and the first test number of electrodes
It measures identical, connects one to one；Second Graphene electrodes are identical with the second test number of electrodes, connect one to one；
(1.3) load 1MHz on test electrode, the AC signal of 16V, then by carbon nano tube suspension drop in each graphene-
Between the first Graphene electrodes of a pair of composite structure of carbon nano tube microbubble generator and each carbon nanotube temperature sensing
It, will be in each graphene-carbon nano tube composite structure microbubble generator between the second Graphene electrodes of a pair of device array
First carbon nanotube is connected with corresponding a pair of first Graphene electrodes；By the second carbon in each carbon nanotube temperature sensor
Nanotube is connected with corresponding a pair of second Graphene electrodes；
(1.4) the first SiO for being 60~200nm in the junction of the first carbon nanotube and the first Graphene electrodes sputtering thickness2It covers
Film layer, in the junction of the second carbon nanotube and the second Graphene electrodes, the 2nd SiO that sputtering thickness is 60~200nm2Mask
Layer.
8. preparation method as claimed in claims 6 or 7, which is characterized in that carbon nano tube suspension is by carbon nanotube with easily waving
Hair property organic solvent is mixed in 0.001~0.05mg/ml ratios.
9. the preparation method as described in claim 5 or 7, which is characterized in that prepare in step (2) main channel, ink jet chambers, into
The step of ink passage, nozzle, is as follows：
(2.1) using standard cleaning technique using twin polishing Wafer Cleaning totally as silicon chip substrate, in silicon chip substrate upper surface
Magnetron sputtering metal mask layer；
(2.2) the spin coating photoresist on metal mask layer obtains main channel and nozzle figure on a photoresist by exposing, developing
Shape corrodes to obtain the metallic film with main channel and nozzle figure, and with metallic film and photoresist with ceric ammonium nitrate solution
For mask, main channel and nozzle are etched in silicon chip substrate upper surface with ICP lithographic methods；Residual photoresist is removed with acetone,
Ammonium ceric nitrate removes kish film；
(2.3) main channel obtained with PDMS filling steps (2.2) and nozzle utilize step (2.1), the method for (2.2) to carve
It loses ink jet chambers, residual photoresist, ammonium ceric nitrate removal kish film is removed with acetone；
(2.4) ink jet chambers obtained with PDMS filling steps (2.3), then sputtered metal film, spin coating photoresist；
(2.5) it is etched using step (2.1), the method for (2.2) into ink passage；It is main logical with the removal of oxygen plasma lithographic method
The PDMS filled in road, nozzle and ink jet chambers；
(2.6) it is sputtered again using step (2.1) method, photoetching and wet etching are obtained in silicon chip substrate lower surface with ink-jet
The metallic film of passageway pattern, and using the metallic film and photoresist as mask, with ICP lithographic methods in silicon chip substrate lower surface
Etch inkjet channel；
(2.7) acetone removal residual photoresist, ammonium ceric nitrate removal kish film.
10. preparation method as claimed in claim 9, which is characterized in that using graphene fragment as middle layer in step (3)
Anode linkage technique, including following sub-step：
(3.1) graphene fragment is transferred to the silicon that step (2) or step (2.7) obtain with the wet method shifting process of spin coating PMMA
The white space of piece substrate surface；
(3.2) substrate of glass that step (1) obtains is fixed on clean transparent glass plate, the mask as litho machine alignment
Version；
(3.3) substrate of glass that the silicon chip substrate and step (3.2) obtained step (3.1) with litho machine obtains is aligned and pastes
It closes, carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube array of temperature sensor is made to correspond to ink-jet
The position of chamber, and towards ink jet chambers, obtain hot jet-printing head semi-finished product；
(3.4) the hot jet-printing head semi-finished product that step (3.3) obtains are placed on press machine；
(3.5) temperature of press machine is raised to 300~350 DEG C, 600~900V DC voltages is passed through to hot jet-printing head semi-finished product,
Continue 10min, complete bonding.
11. preparation method as claimed in claim 5, which is characterized in that using graphene fragment as middle layer in step (3)
Anode linkage technique, including following sub-step：
(3.1) graphene fragment is transferred to the silicon that step (2) or step (2.7) obtain with the wet method shifting process of spin coating PMMA
The white space of piece substrate surface；
(3.2) substrate of glass that step (1) obtains is fixed on clean transparent glass plate, the mask as litho machine alignment
Version；
(3.3) substrate of glass that the silicon chip substrate and step (3.2) obtained step (3.1) with litho machine obtains is aligned and pastes
It closes, carbon nanotube-graphene composite structure microbubble generator array and carbon nanotube array of temperature sensor is made to correspond to ink-jet
The position of chamber, and towards ink jet chambers, obtain hot jet-printing head semi-finished product；
(3.4) the hot jet-printing head semi-finished product that step (3.3) obtains are placed on press machine；
(3.5) temperature of press machine is raised to 300~350 DEG C, 600~900V DC voltages is passed through to hot jet-printing head semi-finished product,
Continue 10min, complete bonding.
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