CN111161956B - Method for preparing co-sensitization film by bidirectional diffusion technology - Google Patents
Method for preparing co-sensitization film by bidirectional diffusion technology Download PDFInfo
- Publication number
- CN111161956B CN111161956B CN202010004998.8A CN202010004998A CN111161956B CN 111161956 B CN111161956 B CN 111161956B CN 202010004998 A CN202010004998 A CN 202010004998A CN 111161956 B CN111161956 B CN 111161956B
- Authority
- CN
- China
- Prior art keywords
- dye
- glass
- film
- preparing
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 206010070834 Sensitisation Diseases 0.000 title claims abstract description 10
- 238000009792 diffusion process Methods 0.000 title claims abstract description 10
- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 8
- 238000005516 engineering process Methods 0.000 title claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000001179 sorption measurement Methods 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 239000004698 Polyethylene Substances 0.000 claims abstract description 4
- -1 polyethylene Polymers 0.000 claims abstract description 4
- 229920000573 polyethylene Polymers 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000975 dye Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 41
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000003504 photosensitizing agent Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a co-sensitization film by a bidirectional diffusion technology, which comprises the following steps of (1) engraving a returning groove on a conductive glass substrate; (2) filling polyethylene into the hollow square groove; (3) preparing a nano porous semiconductor film on the conductive glass; (4) putting the conductive glass into a muffle furnace for sintering; (5) injecting a dye a into the back-type groove on the sintered conductive glass; (6) injecting glass repair resin into the returning groove after the adsorption is finished, and curing the glass repair resin to ensure that the resin completely replaces air in the glass gap, so that the glass and the resin are completely bonded into a whole; (7) and immersing the semiconductor film adsorbed with the dye a into a second dye b solution to obtain the co-sensitized film. The invention can obtain the dye containing a plurality of dye adsorption layers, and the dye molecules of each adsorption layer are not interfered with each other.
Description
Technical Field
The invention relates to the technical field of nano materials, in particular to a method for preparing a co-sensitized film by a bidirectional diffusion technology.
Background
Solar photovoltaic power generation provides a good solution to environmental problems caused by energy shortage and non-renewable energy consumption, and a solar cell as a power generation element is also widely concerned by researchers. The solar cell has a plurality of varieties, but the dye-sensitized solar cell attracts people's attention due to low cost (only 1/5-1/10 of a silicon solar cell), no toxicity, no pollution, high theoretical conversion efficiency and simple preparation process. Moreover, as a novel solar cell, the operating principle of the DSSC cell is completely different from that of the conventional solar cell, and becomes a hotspot of current research.
In the initial research of the DSSC cell, the conversion efficiency is extremely low, mainly because the quantity of the photosensitizing agent which is adsorbed by the photo-anode film and can generate photo-generated electrons is small. At that time, the photo-anode film mainly adopts a compact film, and the specific surface area thereof is very small, so that the adsorption amount of the photo-sensitizer is also very small. Since 1991, a research group with professor Gratzel of professor M.Gratzel of high Industrial academy of Rosemory, Switzerland, used a porous semiconductor film composed of nanometer-sized particles of TIO2 as a material for adsorbing a photosensitizer, the film had a very large specific surface area, and the problem of low dye adsorption of a dense film was solved. The dye sensitized solar cell is one multiphase photoelectronic chemical system comprising conducting glass, nanometer porous semiconductor film, dye sensitizing reagent, redox electrolyte and Pt counter electrode in sandwich structure. Among these components, a semiconductor thin film (sensitized thin film) with a dye adsorbed on the surface is a core component of the battery for realizing photoelectric energy conversion. The generation, transmission, recombination and other important photoelectric energy conversion processes of photoelectrons are determined by dynamics, and the photoelectric conversion efficiency of the cell is determined. How to prepare a high-performance sensitized film is always a key focus of attention in the field of dye-sensitized solar cells. The absorption spectrum is an important factor influencing the performance of the dye-sensitized solar cell, and the semiconductor film only absorbs ultraviolet parts in the solar spectrum, so the property of adsorbing the dye on the surface of the semiconductor film determines the absorption range and the intensity of the sensitized film. Since each dye can absorb light only in a specific wavelength range, no dye has been found so far which can strongly absorb light in a range from the visible region to the infrared region. However, in the prior art, different dyes are adsorbed on the same surface of the film, and the adsorption among different dyes is influenced to different degrees. For example, the commonly used N749 dye has strong absorption in a short wave region of 400-700 nm and weak absorption in a long wave region of 700-900 nm. Therefore, most of the incident light above 700nm can not be absorbed and directly transmits through the sensitizing film, resulting in direct loss of light energy. If a dye with weak absorption in a 400-700 nm short wave region and strong absorption in a 700-900 nm long wave region can be added, the co-sensitization film formed by the two dyes can greatly improve the absorption and utilization of light in the 400-900 nm wave region, and the efficiency of the cell can be further improved. The co-sensitization method can fully utilize the existing dyes, and can adsorb several different dyes on the same film to realize the complementary dye absorption advantages, so that the absorption spectrum of the dye-sensitized solar cell is widened, the photoelectric conversion efficiency is improved, and the co-sensitization method becomes a research hotspot in the field of dye-sensitized solar cells.
The difficulty in preparing co-sensitized films is how to provide a blank layer of semiconductor film for each dye without affecting the amount of different dyes adsorbed. However, in the prior art, the semiconductor film is soaked in the dye solution, the method only passively and unidirectionally controls the adsorption of the dye, so that the contradiction between occupation and adsorption quantity of dye molecules and the mutual influence among the dye molecules is caused, and the method is difficult to prepare the co-sensitized film containing more than 2 dye adsorption layers. Therefore, the search for new methods for preparing co-sensitized thin films is still a primary task in this field. The prepared dye adsorption layer containing 2 dyes adsorbs different dyes on different surfaces of the same nano semiconductor film by diffusing the dyes in two directions, and the broad spectrum co-sensitized film can provide a strong heart for the dye-sensitized solar cell, so that the photoelectric conversion efficiency of the cell is further improved.
Disclosure of Invention
The invention aims to solve the problems that: provided is a method for preparing a co-sensitized thin film by a bidirectional diffusion technique, which can obtain a co-sensitized thin film containing a plurality of dye adsorption layers and the dye molecules of each adsorption layer do not interfere with each other.
The technical scheme provided by the invention for solving the problems is as follows: a method for preparing a co-sensitized thin film by a bidirectional diffusion technique, the method comprising the steps of,
(1) etching a returning groove on the conductive glass substrate;
(2) filling polyethylene into the hollow square groove;
(3) preparing a nano porous semiconductor film on the conductive glass;
(4) putting the conductive glass into a muffle furnace for sintering;
(5) injecting a dye a into the back-type groove on the sintered conductive glass, wherein the dye a can be automatically adsorbed on the a surface of the nano semiconductor film due to the existence of a capillary phenomenon;
(6) injecting glass repair resin into the returning groove after the adsorption is finished, and curing the glass repair resin to ensure that the resin completely replaces air in the glass gap, so that the glass and the resin are completely bonded into a whole;
(7) and immersing the semiconductor film adsorbed with the dye a into a second dye b solution to make the surface b of the film completely adsorb the dye b, thereby preparing the co-sensitized film.
Preferably, the sintering temperature in the step (4) is 500 ℃.
Preferably, the semiconductor film in the step (7) is immersed in the dye solution for 10 to 20 hours at a temperature of 25 ℃.
Compared with the prior art, the invention has the advantages that:
(1) the two different dyes are diffused in two directions, so that the problem of space occupation competition of dye molecules on the nano semiconductor film is solved;
(2) the method solves the contradiction between the mutual influence between dye molecules and the dye adsorption quantity in the prior method for preparing the co-sensitized film by diffusing the dye in one direction;
(3) can prepare co-sensitization film containing 2 different dyes adsorbed on different surfaces of the nano semiconductor film.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, so that how to implement the technical means for solving the technical problems and achieving the technical effects of the present invention can be fully understood and implemented.
A method for preparing a co-sensitization film by a bidirectional diffusion technology comprises the steps of carving a return groove on a conductive surface of conductive glass, and then filling polyethylene into the return groove; adding TiO into the mixture2Printing the slurry on conductive glass with a returning groove, and sintering at 510 ℃ for 30 minutes to form nano-porous TiO2A film. Injecting dye a into the backward groove, and allowing the surface a of the nano semiconductor film to be adsorbed and diffused by capillary action to make the whole TiO2The a surface of the film is adsorbed with dye a to form single dye sensitized TiO2A film. Protecting the returning groove, injecting resin into the glass returning groove by using a high-pressure injector along the thin line of the returning groove to completely replace the air in the glass gap, thereby realizingThe glass and the resin are completely bonded into one body. Finally, the conductive glass absorbing the dye a is immersed into the dye b solution, and single dye sensitized TiO is formed on the b surface of the nano semiconductor film after 12 hours2A film. An a-a/b-b type two-layer co-sensitization film can be obtained.
The foregoing is merely illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the claims. The present invention is not limited to the above embodiments, and the specific structure thereof is allowed to vary. All changes which come within the scope of the invention as defined by the independent claims are intended to be embraced therein.
Claims (3)
1. A method for preparing a co-sensitization film by a bidirectional diffusion technology is characterized by comprising the following steps: the method comprises the following steps of,
(1) etching a returning groove on the conductive glass substrate;
(2) filling polyethylene into the hollow square groove;
(3) preparing a nano porous semiconductor film on the conductive glass;
(4) putting the conductive glass into a muffle furnace for sintering;
(5) injecting a dye a into the back-type groove on the sintered conductive glass, wherein the dye a can be automatically adsorbed on the a surface of the nano semiconductor film due to the existence of a capillary phenomenon;
(6) injecting glass repair resin into the returning groove after the adsorption is finished, and curing the glass repair resin to ensure that the resin completely replaces air in the glass gap, so that the glass and the resin are completely bonded into a whole;
(7) and immersing the semiconductor film adsorbed with the dye a into a second dye b solution to make the surface b of the film completely adsorb the dye b, thereby preparing the co-sensitized film.
2. A method of preparing a co-sensitized film according to claim 1 by a bi-directional diffusion technique, characterized in that: the sintering temperature in the step (4) is 500 ℃.
3. A method of preparing a co-sensitized film according to claim 1 by a bi-directional diffusion technique, characterized in that: and (4) in the step (7), the time for immersing the semiconductor film into the dye solution is 10-20 hours, and the temperature is 25 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010004998.8A CN111161956B (en) | 2020-01-03 | 2020-01-03 | Method for preparing co-sensitization film by bidirectional diffusion technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010004998.8A CN111161956B (en) | 2020-01-03 | 2020-01-03 | Method for preparing co-sensitization film by bidirectional diffusion technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111161956A CN111161956A (en) | 2020-05-15 |
| CN111161956B true CN111161956B (en) | 2021-06-22 |
Family
ID=70561083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010004998.8A Expired - Fee Related CN111161956B (en) | 2020-01-03 | 2020-01-03 | Method for preparing co-sensitization film by bidirectional diffusion technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111161956B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
| CN101320631A (en) * | 2008-07-08 | 2008-12-10 | 西安交通大学 | Demixing-adsorption cooperated-sensitization wide optical spectrum dye sensitization solar battery |
| CN101834069A (en) * | 2010-04-07 | 2010-09-15 | 燕山大学 | Method for sensitizing semi-conductor double membrane by dye |
| CN102709067A (en) * | 2012-05-25 | 2012-10-03 | 南昌航空大学 | Method for preparing permutable multi-dye absorption layer co-sensitized thin film by electrochemical desorption method |
| WO2014013734A1 (en) * | 2012-07-18 | 2014-01-23 | 東京エレクトロン株式会社 | Method for manufacturing dye-sensitized solar cell, and dye-sensitized solar cell |
-
2020
- 2020-01-03 CN CN202010004998.8A patent/CN111161956B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
| CN101320631A (en) * | 2008-07-08 | 2008-12-10 | 西安交通大学 | Demixing-adsorption cooperated-sensitization wide optical spectrum dye sensitization solar battery |
| CN101834069A (en) * | 2010-04-07 | 2010-09-15 | 燕山大学 | Method for sensitizing semi-conductor double membrane by dye |
| CN102709067A (en) * | 2012-05-25 | 2012-10-03 | 南昌航空大学 | Method for preparing permutable multi-dye absorption layer co-sensitized thin film by electrochemical desorption method |
| WO2014013734A1 (en) * | 2012-07-18 | 2014-01-23 | 東京エレクトロン株式会社 | Method for manufacturing dye-sensitized solar cell, and dye-sensitized solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111161956A (en) | 2020-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1909261B (en) | Titanium dioxide crystallized light absorption enhancement thin film electrode and its preparation method | |
| CN106410046A (en) | Perovskite solar cell containing hydrophilic electrode modification layer and preparation method | |
| Xiong et al. | Recent progress on tandem structured dye-sensitized solar cells | |
| Long-Yue et al. | Mechanism of enhanced performance of dye-sensitized solar cell based TiO2 films treated by titanium tetrachloride | |
| CN101271774B (en) | Material used for solar battery light anode, its production method and application | |
| CN102184995B (en) | Long-range plasmon waveguide array synergy unit for solar cell | |
| CN103247444A (en) | Quantum dot and dye co-sensitization solar battery and preparation method thereof | |
| CN106128772B (en) | A kind of preparation method of vulcanized lead quantum dot photovoltaic battery | |
| KR101172361B1 (en) | Manufacturing method of photo electrode for dye-sensitized solar cell | |
| CN101022136A (en) | Alkaline-earth metal salt decorative nano crystal semiconductor optical anode, producing method and application thereof | |
| CN101409158B (en) | ZnO electrode material for hierarchical micro-acceptance structure of dye sensitization solar cell and electrode preparation method | |
| CN102709067B (en) | Method for preparing permutable multi-dye absorption layer co-sensitized thin film by electrochemical desorption method | |
| CN202094161U (en) | Long-range plasma excimer waveguide array synergy unit for solar cell | |
| CN105702472A (en) | Solar cell electrode, preparation method therefor, and solar cell | |
| KR101083310B1 (en) | Dye-sensitized solar cell and manufacturing method thereof | |
| CN111161956B (en) | Method for preparing co-sensitization film by bidirectional diffusion technology | |
| KR100807238B1 (en) | Photoelectrode of dye-sensitized solar cell containing glass powder | |
| CN100541822C (en) | DSSC of a kind of nano-crystal film and preparation method thereof | |
| KR100772512B1 (en) | Transparent semiconductor electrode comprising light scattering oxide particles, and dye-sensitized solar cell by using the semiconductor electrode | |
| CN109796783B (en) | Zinc porphyrin supermolecule dye sensitizer and preparation method and application thereof | |
| KR100416502B1 (en) | Dye-sensitized solar cells including titanium silicalite-2 | |
| CN110600271B (en) | Dye-sensitized solar cell module and preparation method and application thereof | |
| CN109748928B (en) | Phenothiazine supermolecule dye sensitizer, preparation method and application thereof | |
| CN106847518A (en) | A kind of dye-sensitized solar cell anode and preparation method thereof | |
| CN215183560U (en) | Photoelectrode structure and solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210622 Termination date: 20220103 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |