CN111129307B - 一类含有端基酯基有机功能材料的存储性能 - Google Patents
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Abstract
本专利主要是设计一类具有电荷存储性能的含有端基酯基的有机功能材料，该类材料的化学结构为
，其中n=3‑16，键合基团R=Si(OCH3)3,Si(OC2H5)3或者SiCl3。本发明提供该类材料形成电荷存储层的方法及该电荷存储层可应用在非易失性有机场效应晶体管存储器，展示出这类材料较好的存储性能。
Description
技术领域
本发明涉及一类含有端基酯基有机功能材料的存储性能。
背景技术
有机存储器件是基于具有电荷束缚与释放功能的有机材料。相对于基于无机材料的存储器来说，有机存储器具有成本低、重量轻、可大面积制备等优点。
类似于有机场效应晶体管，有机场效应晶体管存储器具有三明治层状结构；不同之处在于，有机存储器中含有电荷存储层，是通过物理、化学方法在栅极介电层与有机半导体层之间引入。在栅电极施加正向或反向电压时，载流子被限制，施加一个反向电压，载流子被释放，从而实现存储性能。
存储窗口和开关比是场效应晶体管存储器的两个重要性能衡量参数。存储窗口是指不同存储状态下阈值电压的差值，开关比是用漏电流的比值来衡量不同的存储状态；两个性能参数值越大，存储性能越好。
自组装过程是修饰材料与衬底通过化学反应键合而形成修饰层。键合基团三甲氧基硅烷基与介电层SiO2表面上活化羟基进行化学反应，3-氨丙基三甲氧基硅烷可在SiO2/Si衬底形成自组装膜，其单分子层用于场效应晶体管存储器中，表现出微弱的存储性能（H.M. Lv, H. Q. Wu, C. Huang, Y. D. Wang and H. Qian, Appl. Phys. Express.,2014, 7, 045101.）。因此在本领域中需要开发具有高存储性能的有机材料及其在有机场效应晶体管存储器中的应用。
发明内容
1．本发明的特征是设计一类具有电荷存储能力的有机功能材料，化学结构包括三部分：具有电荷存储功能的端基酯基、键合基团及烷基链，化学结构通式为：
2．上述的R为Si(OC2H5)3、n为8，材料为SiAAE，结构式为
。
3. 本发明提供用于上述材料SiAAE的合成方法。
4. 本发明提供该类材料可在SiO2表面自组装形成电荷存储层的方法。
5. 本发明将该类电荷存储材料应用在非易失性有机场效应晶体管存储器。
附图说明
结合如下附图及详细描述将会更清楚地理解本发明的上述和其它特征及优点，其中：
图1有机场效应晶体管存储器结构示意图；沟道的长和宽分别为100μm与2000μm。
图2晶体管的源漏极电流随栅源极电压变化的转移特征曲线；由图可以观察到，当栅源极电压V GS 向负方向移动时，源漏极电流随着栅源极电压的增大而增大。与此相反，当栅源极电压V GS 向正方向移动时，源漏极电流会随着栅源极电压的增大而减小。
图3电压写入光照擦除模式下的存储转移曲线；电压写入光照擦除模式下，写入电压为栅源极电压-30 V时间1 s，转移曲线向负方向移动，表明空穴载流子在栅压电场作用下，从并五苯pentacene半导体层转移到SiAAE电荷存储层，这是存储器的“写”操作；将发光二极管LED光源对着存储器器件的正上方照射1s后，可以观察到转移曲线几乎回到初始位置，这是存储器的“擦”操作。
具体实施方式
下面对本发明的优选实施案例进行详细阐述，以使本发明的优点和特征能更易于被本领域技术人员理解。下面对电荷存储材料SiAAE化学合成作详细说明。
实施案例1：材料SiAAE的合成：
合成如下：
反应瓶中加入十一碳烯酸甲酯与三乙氧基硅烷（摩尔比为1:3），滴入卡斯特催化剂；在氮气气氛、温度50℃条件下，反应持续48h，反应溶液变为深棕色。后处理，硅胶柱法分离纯化，溶剂为石油醚与乙酸乙酯的混合溶液。
实施案例2：电荷存储层的制备
（1）SiO2（300 nm厚）/Si（n型）衬底依次在丙酮、乙醇、去离子水超声，在烘箱里80-120 ℃干燥。用氧等离子体处理10-30 min；
（2）将处理好的SiO2/Si浸泡到SiAAE的无水甲苯溶液里，在80 ℃下自组装48 h到60 h。从溶液中取出，用甲苯充分冲洗，转移到烘箱里，在110℃维持10-40 min。
实施案例3：有机场效应晶体管存储器的制备
将带有电荷存储层的衬底放入真空蒸镀室，在真空度为3 x 10-4 Pa、蒸镀速率为0.1 Å S-1下依次蒸镀50 nm有机半导体材料并五苯pentance、源、漏电极各50 nm Au，晶体管沟道的长和宽分别为100 μm与2000 μm。器件结构为SiO2/Si/电荷存储层/pentacene（50nm）/Au (50 nm)。
实施案例4：器件性能测试
使用Keithley2400对器件进行性能测试。性能指标综合在下表。
非易失性有机场效应晶体管存储器性能参数
| Device | <i>μ</i><sub><i>FET</i></sub> (cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) | <i>V</i><sub>th</sub> (V) | <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> | Memory window (V) |
| SiAAE | 0.033 | 2.64 | 2.78 × 10<sup>3</sup> | 14 |
Claims (3)
1.一类具有存储性能的含有端基酯基的有机功能材料，其特征在于：材料的化学结构式为
，其中n = 3-16；键合基团R = Si(OCH3)3, Si(OC2H5)3或者SiCl3。
2.根据权利要求1所述含有端基酯基的有机功能材料在SiO2表面形成电荷存储层的方法，其特征在于：SiO2/Si衬底依次在丙酮、乙醇、去离子水中超声，在烘箱里80-120 ℃干燥；用氧等离子体处理10-30 min；将处理好的SiO2/Si浸泡到含有端基酯基的有机功能材料的无水甲苯溶液里，在60-100 ℃下自组装48-60 h；从溶液中取出，用甲苯充分冲洗，转移到烘箱里，在110℃维持10-40 min；所用衬底是n型Si上厚度为300 nm的SiO2。
3.根据权利要求1所述含有端基酯基的有机功能材料在非易失性有机场效应晶体管存储器中的应用，其特征在于：将按照权利要求2描述方法制备的带有电荷存储层的衬底放入真空蒸镀室，在高真空下，依次蒸镀30-80 nm有机半导体材料并五苯pentance、源、漏Au电极各50 nm，晶体管沟道的长和宽分别为60-120 μm与1000-2000 μm，构建结构为SiO2/Si/电荷存储层/pentacene/Au的场效应晶体管存储器。
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