CN111123417A - Terahertz wave stealth device with high efficiency and wide frequency band - Google Patents
Terahertz wave stealth device with high efficiency and wide frequency band Download PDFInfo
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- CN111123417A CN111123417A CN202010030352.7A CN202010030352A CN111123417A CN 111123417 A CN111123417 A CN 111123417A CN 202010030352 A CN202010030352 A CN 202010030352A CN 111123417 A CN111123417 A CN 111123417A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 230000010287 polarization Effects 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 description 16
- 238000001514 detection method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005464 sample preparation method Methods 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Abstract
The invention discloses a high-efficiency broadband terahertz wave stealth device which comprises a terahertz wave generating unit, a high-resistance silicon tip cone sample and a terahertz wave testing unit, wherein the terahertz wave generating unit is used for generating terahertz waves in any polarization state, the high-resistance silicon tip cone sample comprises a plurality of high-resistance silicon tip cones which are arranged in an array mode, the terahertz wave testing unit comprises a rotating motor, a terahertz time-domain spectrograph and a terahertz wave collecting arm, and the rotating motor is used for controlling the terahertz time-domain spectrograph so as to rotate the azimuth angle of the high-resistance silicon tip cone sample at will and change the angle of the terahertz wave collecting arm at will. The invention can realize the absorption of terahertz waves with wide frequency band and high efficiency; the terahertz wave detector can be suitable for terahertz wave incidence at any angle; the terahertz wave reflecting and collecting device can be suitable for terahertz incident waves with any polarization, has no selectivity on the polarization of the incident terahertz waves, and can realize terahertz wave reflection and collection at any angle.
Description
Technical Field
The invention belongs to the field of terahertz and radar stealth, and particularly designs a terahertz wave stealth device which is easy to realize, low in price, ultra wide band, free of polarization dependence, high in absorption efficiency, stable and reliable.
Background
Stealth technology refers to the technology that, in a specific detection environment, the detectability of a target can be reduced by controlling various characteristic signals of the target, and the target is difficult to find, track, identify and attack. In actual combat, stealth techniques can effectively improve survivability and penetration as well as weapon combat power. Currently, most of the research on stealth technology is mainly focused on the GHz band. Terahertz waves generally refer to electromagnetic radiation in the radiation frequency band of between 0.1-10 THz. Terahertz waves not only have the advantages of microwaves and infrared waves, but also have quite unique frequency band advantages. In recent years, the terahertz technology has made a major breakthrough in many fields such as aerospace, communication radar, security imaging, biomedicine, astronomy and the like, can be widely and deeply fused with multiple subjects, and becomes a research hotspot.
The terahertz wave stealth material is a wave-absorbing material with low reflection and high absorption rate in a terahertz electromagnetic wave frequency band. The novel terahertz wave detection radar applied at the present stage can adapt to a very complex battlefield environment, and a new breakthrough of the existing stealth technology is realized. At present, most stealth weapons are designed for GHz wave radar, the area of a scattering cross section of the GHz wave radar can be reduced, and the absorption of GHz-frequency-band electromagnetic waves is realized.
The wavelength of the terahertz wave is shorter than that of the GHz wave, so that the terahertz wave puts higher requirements on stealth materials and structures. The existing terahertz stealth materials can be divided into two types in principle: the first type is a metamaterial with a micro-nano structure, and structural absorption is mainly used through the design of the micro-nano structure; the second type is a carbon-based wave-absorbing material, which mainly absorbs the terahertz waves by using the absorption performance of a special material.
The first type of metamaterial is a resonance type wave-absorbing material, and the electrical conductivity and the magnetic conductivity are regulated and controlled by utilizing a periodic array of sub-wavelengths, so that strong absorption can be generated at a specific frequency. Generally, the metamaterial is composed of a three-layer structure, wherein the first layer is a periodic metal array structure, and the periodic metal array structure meets dielectric matching conditions through the design of the structure and the setting of specific geometric parameters and is used for attenuating the surface reflection of terahertz waves. The second layer structure is a dielectric layer with high refractive index, and terahertz is effectively attenuated through the dielectric layer. The third layer is a metal plate, so that total reflection is realized, and a transmission signal of the terahertz wave is isolated. However, the limitation of the metamaterial as the terahertz stealth material is that it can only obtain strong absorption at a certain frequency point. Therefore, how to realize high-broadband terahertz absorption also faces huge challenges. Meanwhile, the metamaterial can be influenced by factors such as the incident angle and the polarization direction of the terahertz waves.
The second type of carbon-based material has stable structure and simple preparation process, and is also an important terahertz stealth material. Firstly, the carbon-based composite material has poor surface dispersibility, and an effective terahertz stealth grid structure is difficult to form; secondly, terahertz waves produce strong reflections at the interfaces of the materials. These two factors seriously compromise the stealth performance of terahertz waves. Therefore, how to realize the low reflection and high absorption performance of terahertz waves by designing and adjusting the structure of the carbon-based material still remains to be a significant challenge.
Disclosure of Invention
At present, the application of the high-resistance silicon micro-tip cone material in the terahertz stealth material is not researched, but the invention discovers that when terahertz waves are emitted into a silicon micro-tip cone structure, the silicon micro-tip cone structure can realize strong structural absorption of the terahertz waves and the function of structure-induced abnormal scattering, and the incident terahertz waves are scattered to other angles to realize stealth.
The invention provides a high-efficiency broadband terahertz wave stealth device which comprises a terahertz wave generating unit, a high-resistance silicon tip cone sample and a terahertz wave testing unit,
the terahertz wave generating unit is used for generating terahertz waves in any polarization state;
the high-resistance silicon pointed cone sample comprises a plurality of high-resistance silicon pointed cones which are arranged in an array and used for realizing high absorption and low reflection of terahertz waves incident at any angle;
the terahertz wave testing unit comprises a rotating motor, a terahertz time-domain spectrograph and a terahertz wave collecting arm,
the rotating motor is used for controlling the terahertz time-domain spectrograph so as to rotate the azimuth angle of the high-resistance silicon conical sample at will and change the angle of the terahertz wave collecting arm at will.
In particular, when the incident angle of the terahertz wave is 30 °, the high-resistance silicon pyramid sample reduces the reflection signal collected at 30 ° by 37.5%, and shifts the maximum value of the scattering signal by 8 °, reducing the maximum scattering signal by 5.1%.
Particularly, each high-resistance silicon micro pointed cone is a high-resistance silicon nano pointed cone.
The invention has the beneficial effects that:
1) compared with a carbon-based material, the high-conductivity silicon tip cone material utilized by the invention can greatly reduce the reflectivity to terahertz waves, so that high absorption and low reflection to terahertz waves can be realized;
2) the invention can realize the absorption of terahertz waves with wide frequency band and high efficiency;
3) the terahertz wave detector can be suitable for terahertz wave incidence at any angle;
4) the terahertz wave polarization detector can be suitable for terahertz incident waves with any polarization, and has no selectivity on the polarization of the incident terahertz waves;
5) the preparation cost of the silicon micro-tip cone material used by the invention is low, the preparation can be realized by utilizing various common sample preparation methods, the complicated and high-cost manufacturing process similar to various metamaterials is not needed, and the defects of high material requirement and high cost of various existing schemes are overcome.
6) The terahertz reflection and scattering signal testing device can realize the terahertz reflection and scattering signal testing at any angle.
Drawings
Fig. 1 is a main structural schematic diagram of a high-efficiency broadband terahertz wave cloaking device according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings and examples, it being understood that the examples described below are intended to facilitate the understanding of the invention, and are not intended to limit it in any way.
The invention provides a high-efficiency broadband terahertz wave stealth device which comprises a terahertz wave generating unit, a high-resistance silicon tip cone sample and a terahertz wave testing unit, wherein the terahertz wave generating unit is used for generating terahertz waves in any polarization state, the terahertz wave testing unit comprises a rotating motor, a terahertz Time Domain Spectrometer (TDS) and a terahertz wave collecting arm, and the rotating motor is used for controlling the terahertz time domain spectrometer to rotate the azimuth angle of the high-resistance silicon tip cone sample at will and change any angle of the terahertz wave collecting arm. In particular, as shown in fig. 1, the high-resistance silicon pointed cone sample comprises a plurality of high-resistance silicon micro pointed cones arranged in an array, such as silicon nano pointed cones.
The present invention is verified by experiments as follows. The experimental verification of the terahertz stealth material is based on a measurement experiment of terahertz scattering, a terahertz time-domain spectrometer under the control of a rotating motor is adopted, the azimuth angle of a high-resistance silicon pointed cone sample is changed by rotating the sample at will, the incident angle of terahertz waves is adjusted and controlled by a computer, and meanwhile, the reflection, scattering and transmission signals of the terahertz waves can be detected by rotating a terahertz wave collecting arm.
Experimental methods
In order to make the verification result more clear, the terahertz time-domain spectroscopy is adopted in the embodiment to measure the reflection and scattering of the terahertz wave on two samples, namely the high-resistance silicon sample and the high-resistance silicon micro-tip cone, wherein the high-resistance silicon sample is used for experimental comparison. In order to better observe signals, a computer is used for operating a rotating motor to enable terahertz waves to be respectively incident and hit on the high-resistance silicon and high-resistance silicon micro-tip cone samples in an inclined mode, the incident angle is selected to be 30 degrees, and the reflection signals and the scattering signals of the terahertz waves by the high-resistance silicon and high-resistance silicon micro-tip cone samples are respectively measured.
Results of the experiment
The initial signal of the terahertz wave is 27.3nA, the reflection signal of the high-resistance silicon at 30 degrees is 16.6nA, the maximum value is reached, and the maximum scattering rate (just the reflectivity) is 60%; the scattered signal decreases with increasing angle of deviation on either side of the 30 degree reflection angle. The reflected signal of the silicon microtip sample at 30 degrees is 6.16nA, and the reflectivity is 22.5%. The scattering signal reached a maximum of 15nA at 38 degrees with a maximum scattering of 54.9%.
The experimental result of comparing the two samples can be obtained, and under the incidence of 30 degrees, the reflection signal collected at 30 degrees can be reduced by 37.5% by the silicon micro-tip cone structure; the maximum scatter signal is shifted by 8 degrees while the maximum scatter signal is reduced by 5.1%.
The terahertz stealth material with high quality and high performance can be realized by utilizing the structural absorption characteristic of the silicon micro-tip cone material. Meanwhile, the silicon micro-tip cone material not only can realize high absorption performance on a terahertz wave broadband, but also has no dependence on the angle and polarization of incident terahertz waves. Based on the terahertz signal detection method, the terahertz signal detection device and the terahertz signal detection method, the terahertz signal detection method can be applied to combat weapons or the surface of a target needing to avoid terahertz radar detection, so that the target can strongly absorb and scatter terahertz signals sent by the terahertz radar, and the detection capability of the terahertz radar is greatly weakened.
It will be apparent to those skilled in the art that various modifications and improvements can be made to the embodiments of the present invention without departing from the inventive concept thereof, and these modifications and improvements are intended to be within the scope of the invention.
Claims (3)
1. A high-efficiency broadband terahertz wave stealth device is characterized by comprising a terahertz wave generating unit, a high-resistance silicon tip cone sample and a terahertz wave testing unit,
the terahertz wave generating unit is used for generating terahertz waves in any polarization state;
the high-resistance silicon pointed cone sample comprises a plurality of high-resistance silicon pointed cones which are arranged in an array and used for realizing high absorption and low reflection of terahertz waves incident at any angle;
the terahertz wave testing unit comprises a rotating motor, a terahertz time-domain spectrograph and a terahertz wave collecting arm,
the rotating motor is used for controlling the terahertz time-domain spectrograph so as to rotate the azimuth angle of the high-resistance silicon conical sample at will and change the angle of the terahertz wave collecting arm at will.
2. The device according to claim 1, wherein when the incident angle of the terahertz wave is 30 °, the high-resistance silicon pyramid sample reduces the reflection signal collected at 30 ° by 37.5%, and shifts the maximum value of the scattering signal by 8 ° and reduces the maximum scattering signal by 5.1%.
3. The device of claim 1, wherein each high-resistivity silicon micro-tip is a high-resistivity silicon nano-tip.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112833711A (en) * | 2020-12-18 | 2021-05-25 | 北京航空航天大学 | Terahertz wave stealth device |
| CN113219223A (en) * | 2021-03-15 | 2021-08-06 | 北京航空航天大学 | Totally-enclosed rectangular terahertz darkroom |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104774472A (en) * | 2015-04-10 | 2015-07-15 | 大连东信微波技术有限公司 | Ultra-wideband terahertz wave-absorbing material |
| CN105914565A (en) * | 2016-07-08 | 2016-08-31 | 电子科技大学 | Optical control terahertz wave amplitude modulator based on silicon nanoneedle |
| CN106785475A (en) * | 2016-12-29 | 2017-05-31 | 电子科技大学 | A kind of THz wave wide band absorption material based on silicon nanoneedle |
| CN108254944A (en) * | 2018-01-19 | 2018-07-06 | 电子科技大学 | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof |
| KR20180102720A (en) * | 2017-03-07 | 2018-09-18 | 한국기계연구원 | Apparatus for detecting material based on metamaterial |
| CN109509988A (en) * | 2019-01-07 | 2019-03-22 | 中国计量大学 | The tapered ultra wide band THz wave absorber of honeycomb |
| CN110244476A (en) * | 2019-05-20 | 2019-09-17 | 东莞理工学院 | A kind of Terahertz modulator and preparation method thereof based on silicon micro-nano structure |
-
2020
- 2020-01-13 CN CN202010030352.7A patent/CN111123417A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104774472A (en) * | 2015-04-10 | 2015-07-15 | 大连东信微波技术有限公司 | Ultra-wideband terahertz wave-absorbing material |
| CN105914565A (en) * | 2016-07-08 | 2016-08-31 | 电子科技大学 | Optical control terahertz wave amplitude modulator based on silicon nanoneedle |
| CN106785475A (en) * | 2016-12-29 | 2017-05-31 | 电子科技大学 | A kind of THz wave wide band absorption material based on silicon nanoneedle |
| KR20180102720A (en) * | 2017-03-07 | 2018-09-18 | 한국기계연구원 | Apparatus for detecting material based on metamaterial |
| CN108254944A (en) * | 2018-01-19 | 2018-07-06 | 电子科技大学 | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof |
| CN109509988A (en) * | 2019-01-07 | 2019-03-22 | 中国计量大学 | The tapered ultra wide band THz wave absorber of honeycomb |
| CN110244476A (en) * | 2019-05-20 | 2019-09-17 | 东莞理工学院 | A kind of Terahertz modulator and preparation method thereof based on silicon micro-nano structure |
Non-Patent Citations (1)
| Title |
|---|
| 金浓 等: "硅基金字塔结构光控太赫兹调制器", 《太赫兹科学与电子信息学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112833711A (en) * | 2020-12-18 | 2021-05-25 | 北京航空航天大学 | Terahertz wave stealth device |
| CN113219223A (en) * | 2021-03-15 | 2021-08-06 | 北京航空航天大学 | Totally-enclosed rectangular terahertz darkroom |
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Application publication date: 20200508 |