CN108254944A - Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof - Google Patents
Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof Download PDFInfo
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- CN108254944A CN108254944A CN201810054212.6A CN201810054212A CN108254944A CN 108254944 A CN108254944 A CN 108254944A CN 201810054212 A CN201810054212 A CN 201810054212A CN 108254944 A CN108254944 A CN 108254944A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention provides light-operated terahertz wave modulator of a kind of micro-nano mixed structure of silicon substrate and preparation method thereof, including silicon base, micron pyramid structure, nano aperture structure, semiconductor laser, fiber optic modulator, Terahertz wave source, terahertz detector, silicon base, micron pyramid structure, nano aperture structure form the micro-nano mixed structure of silicon substrate；The terahertz wave beam of Terahertz wave source is incident in micron pyramid structure, and terahertz detector is used to receive the terahertz signal that Terahertz wave source passes through the micro-nano mixed structure of silicon substrate；The modulator of the present invention can be operated in down to 10mW/mm2Extremely low laser power under, in 300mW/mm2Laser power under, device highest modulation depth can reach 95%；Working frequency range covers the ultra wide band Terahertz frequency range of 0.1 1.5THz, and very big modulation depth and smaller Insertion Loss are kept while having very big modulation rate (3MHz).
Description
Technical field
The invention belongs to THz wave applied technical field, the light-operated Terahertz of specially a kind of micro-nano mixed structure of silicon substrate
Wave modulator and preparation method thereof.
Background technology
Terahertz (THz, 1THz=1012Hz) wave refer to frequency from 0.1THz to 10THz in the range of electromagnetic wave, it be situated between
Between millimeter wave and infrared light, wavelength is between 3mm to 30um, in the transition region from electronics to photonic propulsion.THz waves have
Numerous superior functions such as the unique transient state, broadband property, coherence and the low energy that have.Therefore in short-distance wireless communication, defend
The fields such as star communication, medical imaging, radio astronomy and remote sensing radar have broad application prospects.Wherein THz imaging technology
It is two most potential application fields of current Terahertz with wireless communication technique.
Due to the particularity of THz wave, the most of substance of nature all lacks THz wave effective electromagnetism and rings
Should, and existing microwave and optics corresponding device are difficult to be applied directly to terahertz wave band, this leads to the tune to THz wave
Control is very difficult.At present, Terahertz modulator is the important topic in Terahertz Technology chain, has become and restricts Terahertz reality
One of major technical barrier of application.Have studied application of the multiple material in THz wave modulation technique both at home and abroad.Packet
Include semi-conducting material, phase-change material, superconductor, liquid crystal material and artificial electromagnetic Meta Materials etc..
The representative work that THz wave regulation and control are realized using semiconductor is 2013, Capital Normal University Zhang Yan professors
Using laser pump (ing) intrinsic silicon material, regulation and control (document " Z.W.Xie, the Spatial Terahertz to THz wave is realized
Modulator,Scientific Reports,3:3347,2013).The modulation system of optical pumping semiconductor silicon usually has big
Amplitude broad band modulating characteristic, and array regulation and control are easily achieved, it is the important way for realizing the imaging of Terahertz space array formula.
But the very high (n of the refractive index of siliconSi=3.4), the laser that is incident on silicon chip is generated serious reflection (up to 40% with
On), especially at short wavelength laser range (≤700nm), its reflectivity is more up to 60%, this needs very big laser power
Relatively large modulation depth can be reached.But high power laser not only increases system cost, and very big laser work(
Reflected light caused by rate can seriously affect stability and the safety of entire application system, while the generated heat in Si pieces
The performance of Si modulators can be caused to change.In addition, intrinsic silicon carrier lifetime (more than 10 microseconds) is limited to, modulation speed
Rate is smaller, only KHz magnitudes.
Invention content
The purpose of the present invention is to solve the above problems of the prior art, provide a kind of silicon substrate micro-nano mixed structure
Light-operated terahertz wave modulator and preparation method thereof.
For achieving the above object, technical solution of the present invention is as follows：
The light-operated terahertz wave modulator of a kind of micro-nano mixed structure of silicon substrate, including silicon base, positioned at silicon substrate surface
Micron pyramid structure, the nano aperture structure for being distributed in micron pyramid structure surface connect fiber optic modulator by optical fiber
Semiconductor laser, for exporting the fiber optic modulator that modulating lasering beam is irradiated in micron pyramid structure, the micron
Pyramid structure is tetragonous wimble structure, and it is micro-nano mixed that the silicon base, micron pyramid structure, nano aperture structure form silicon substrate
Close structure；The micron pyramid structure and nano aperture structure be be sequentially etched on a silicon substrate with wet etching method and
Into the two belongs to same silicon materials；The terahertz wave beam that Terahertz wave source generates is incident in micron pyramid structure, Terahertz
Detector is used to receive the terahertz signal that Terahertz wave source passes through the micro-nano mixed structure of silicon substrate.
It is preferred that the silicon base uses intrinsic silicon or High Resistivity Si, the Ω .cm of resistivity >=1000-1。
It is preferred that the micron pyramid structure is that silicon base is etched to obtain using alkaline process, characteristic size is
Micron dimension, the height and the bottom surface length of side of pyramid structure are between 5 μm~15 μm.
It is preferred that the nano aperture structure is that micron pyramid structure is carved using metal ion auxiliary acid system
Erosion obtains, and is hole shape, and hole diameter and depth are between 10nm~100nm, wherein the metal ion for etching only limits
In Au and Pt.
It is preferred that after the completion of the preparation of nano aperture structure, it is heat-treated under 900 DEG C of high temperature in argon atmosphere
30min, so that Au Pt ions diffuse into Si material lattices.
It is preferred that the modulating lasering beam output wavelength is the laser of 638nm, laser intensity is more than 10mw/
mm2。
It is preferred that modulator can be operated in down to 10mW/mm2Extremely low laser power under, when laser power >=
300mW/mm2When, the highest modulation depth of terahertz wave modulator reaches 95%, and highest modulating speed reaches 3MHz.
For achieving the above object, the present invention also provides a kind of light-operated THz waves of above-mentioned micro-nano mixed structure of silicon substrate
The preparation method of modulator, includes the following steps：
(1) the micro-nano mixed structure of silicon substrate is prepared：
The low-doped Si pieces that 1.1 choose twin polishing, thickness is 500 μm, resistivity are 1000-10000 Ω .cm-1；With
Hydrofluoric acid removes silicon face natural oxidizing layer, is washed repeatedly 3 times or more with acetone, alcohol, deionized water successively, and drying is for use；
The 1.2 configuration above-mentioned washed silicon chips of alkaline corrosion solution etches, form micron pyramid structure；
1.3 the acid etching liquid of configuration, wherein hydrogen peroxide are eventually adding, the etching liquid after preparing is drawn with dropper, is added drop-wise to
The cleaned silicon chip sample surface for having micron pyramid structure forms nano aperture structure, and reaction cleans drying after five minutes；
Above-mentioned sample is heat-treated 30min by 1.4 in argon atmosphere under 900 DEG C of high temperature so that Au ions or Pt ions
Diffuse into Si material lattices；
(2) laser assembles：
Fiber coupled laser diode and fiber optic modulator with 638nm wavelength lasers are selected, laser passes through optical fiber
It exports and is incident on the micro-nano mixed structure of silicon substrate after modulators modulate.
It is preferred that the alkaline corrosion solution of step 1.2 is potassium hydroxide, isopropanol, the mixing of deionized water are molten
The weight percent 4%-5% of liquid, wherein potassium hydroxide, isopropanol percent by volume are 20%, the temperature of alkaline corrosion solution
It it is 80-85 DEG C, the etching reaction time is 12-20 minutes.
It is preferred that the acid etching liquid of step 1.3 is deionized water, ethyl alcohol, hydrofluoric acid, gold chloride, hydrogen peroxide
By 2:2:1:1:5 volume ratio mixing.
Pyramid structure and nano aperture structure are sequentially etched in high resistant silicon base with wet etching method,
Belong to same silicon materials, there is no interface between each layer, thus with structural stability and prepare simplicity；The semiconductor laser
The laser that device generates enters fiber optic modulator by fiber coupling, the laser light incident through ovennodulation to the micro-nano mixing knot of the silicon substrate
On structure, so as to generate transmission modulation effect to terahertz wave beam caused by THz source.This Terahertz modulator is transmission-type.
The modulator forms micro-nano light trapping structure using wet etching technique in silicon face.The structure has pole to laser
Strong absorbability substantially reduces the reflectivity of laser, thus the greatly utilization rate of improving laser；It is introduced in preparation process
Au or Pt atoms can reduce the carrier lifetime of silicon, increase modulating speed.Make in the pumping laser of 300nm-1100nm
Under, most laser are absorbed and used, and inside configuration will generate a large amount of photo-generated carrier, consumingly hinder THz wave
Transmission, by modulating laser power, can realize to THz wave transmission significantly modulate.The modulator preferably solves
The problem of modulation depth is mutually restricted with modulation rate, can work under extremely low laser power, can also very big
Still there is larger modulation rate under modulation depth.The modulator can be used in THz imaging technology as high-speed wideband too
Hertz wave regulates and controls device.
The core concept of the present invention is not only to be conceived to the modulating action of structure to THz wave in itself, while considers to finish
Effect of the structure to laser.On the one hand using the micro-nano light trapping structure of the silicon substrate absorptivity (more than 90%) high to visible ray significantly
Increase the utilization rate to laser；Meanwhile material and Terahertz wave modulation area are considerably increased using micro-nano structure, it improves
To the utilization rate of THz wave.More than 2 points to realize larger modulation depth with the laser power of very little.Separately
Outside, when preparing nano aperture structure, the gold particle of introducing can reduce the material carrier service life, greatly promote the tune of modulator
Rate processed solves the contradiction that modulation depth is mutually restricted with modulation rate to a certain extent.
A kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate provided by the invention, operation principle are as follows：
Under no laser action, the micro-nano mixed structure of silicon substrate is very high to the THz wave transmissivity of 0.1-1.5THz.This is because
Carrier concentration in the high resistant silicon base of selection is very low, along with micron pyramid structure is in Terahertz sub-wavelength feature ruler
In very little range, it is made to have certain anti-reflection to act on to THz wave；When the laser action of certain wavelength is in the micro-nano mixing knot of silicon substrate
During structure, since the nanometer light trapping structure of material surface can capture the laser of the overwhelming majority so that the laser power of very little can
To generate a large amount of photo-generated carrier, these carriers generate incident THz wave strong inhibition, THz wave
Transmissivity drastically declines, and can even be turned off when laser power is sufficiently large.Can laser be changed by laser modulator in this way
Power realizes the modulation of THz wave intensity in transmission.The modulation rate of the modulator depends primarily on the carrier lifetime of material,
Generally it can reduce carrier lifetime by mixing the modes such as Au, Pt, so as to promote modulation rate, therefore, nano aperture structure etching
In, etching ion is only limitted to Au, Pt；Modulation depth depends on the concentration of photo-generated carrier in semiconductor, silicon substrate micro nano structure
It is exactly based on to increase laser utilization and increase modulation area and realizes very big modulation to increase unit volume carriers concentration
Depth.
Compared with prior art, the invention has the characteristics that：
1st, the light-operated terahertz wave modulator of the micro-nano mixed structure of a kind of silicon substrate provided by the present invention, can be operated in very
Under low laser power, experiment shows 10mW/mm2Extremely low laser power modulation to terahertz wave band can be realized.
300mW/mm2Laser power under, device highest modulation depth can reach 95%；
2nd, the light-operated terahertz wave modulator of the micro-nano mixed structure of a kind of silicon substrate provided by the present invention has ultra wide band tune
The characteristics of system and modulation depth are very big, working frequency range covers the ultra wide band Terahertz frequency range of 0.1-1.5THz, and modulation depth reaches
To more than 90%；
3rd, the light-operated terahertz wave modulator of the micro-nano mixed structure of a kind of silicon substrate provided by the present invention makes to be typically due to mix
The influence that decrease in transmission, modulation depth caused by miscellaneous metal ion reduce almost disappears, and has very big modulation rate
Very big modulation depth and smaller Insertion Loss are kept while (3MHz)；
4th, the light-operated terahertz wave modulator of the micro-nano mixed structure of a kind of silicon substrate provided by the present invention is that a kind of independence should
Spatial mode modulator, stable structure prepare that simple, of low cost, coupling is strong, are suitble to large-scale production.
Description of the drawings
Fig. 1 is the structure diagram of the light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate provided by the invention.
Fig. 2 is the SEM figures that micron pyramid structure and nano aperture structure are etched on silicon chip of the present invention；(a) it is micron
Pyramid structure figure, (b) are nano aperture structure chart.
Fig. 3 is ultraviolet-visible-infrared spectrogram of silicon substrate micro nano structure obtained by the specific embodiment of the invention.
Fig. 4 is the terahertz time-domain spectroscopy that acquisition is tested in the specific embodiment of the invention, including air reference signal, height
Hinder the time-domain spectroscopy of silicon and silicon substrate micro nano structure sample under the effect of different laser powers；(a) it is the time domain light of High Resistivity Si
Spectrum, (b) are the time-domain spectroscopy of silicon substrate micro nano structure.
Fig. 5 is that High Resistivity Si is acted on from silicon substrate micro nano structure sample in different laser powers in the specific embodiment of the invention
Under THz wave transmission spectrum；(a) it is the transmission spectrum of High Resistivity Si, (b) is transmission spectrum of silicon substrate micro nano structure.
Fig. 6 be the specific embodiment of the invention under 340GHz Solid Sources, frequency for 10KHz, 20KHz modulate laser make
The THz wave modulated signal dynamic spectrum detected under；(a) for 10KHz the dynamic spectrum of silicon and silicon substrate micro nano structure, (b) when
The dynamic spectrum of silicon and silicon substrate micro nano structure during for 20KHz.
Wherein, 1 it is silicon base, 2 be a micron pyramid structure, 3 be nano aperture structure, 4 be semiconductor laser, 5 is
Optical fiber, 6 be fiber optic modulator, 7 be Terahertz wave source, 8 be terahertz detector, 9 be modulating lasering beam, 10 be THz wave
Beam.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Embodiment
The light-operated terahertz wave modulator of a kind of micro-nano mixed structure of silicon substrate, including silicon base 1, positioned at 1 surface of silicon base
Micron pyramid structure 2, be distributed in 2 surface of micron pyramid structure nano aperture structure 3, by optical fiber 5 connect optical fiber
The semiconductor laser 4 of modulator 6, for exporting the fiber optic modulator that modulating lasering beam 9 is irradiated in micron pyramid structure 2
6, the micron pyramid structure 2 be tetragonous wimble structure, the silicon base 1, micron pyramid structure 2,3 structure of nano aperture structure
Into the micro-nano mixed structure of silicon substrate；The micron pyramid structure 2 and nano aperture structure 3 are in silicon with wet etching method
It is sequentially etched in substrate 1, the two belongs to same silicon materials；The terahertz wave beam 10 that Terahertz wave source 7 generates is incident on micro-
In rice pyramid structure 2, terahertz detector 8 is used to receive terahertz of the Terahertz wave source 7 by the micro-nano mixed structure of silicon substrate
Hereby signal.
The silicon base 1 uses intrinsic silicon or High Resistivity Si, the Ω .cm of resistivity >=1000-1。
The micron pyramid structure 2 is that silicon base 1 is etched to obtain using alkaline process, and characteristic size is micron dimension, gold
The height and the bottom surface length of side of word tower structure are between 5 μm~15 μm.
The nano aperture structure 3 is that micron pyramid structure 2 is etched to obtain using metal ion auxiliary acid system, is hole
Hole shape, hole diameter and depth are between 10nm~100nm, wherein the metal ion for etching is only limitted to Au and Pt.
9 output wavelength of modulating lasering beam is the laser of 638nm, and laser intensity is more than 10mw/mm2。
The fiber optic modulator 6 can be operated in down to 10mW/mm2Extremely low laser power under, when laser power >=
300mW/mm2When, the highest modulation depth of terahertz wave modulator reaches 95%, and highest modulating speed reaches 3MHz.
The preparation method of the light-operated terahertz wave modulator of the above-mentioned micro-nano mixed structure of silicon substrate, includes the following steps：
(1) the micro-nano mixed structure of silicon substrate is prepared：
The low-doped Si pieces that 1.1 choose twin polishing, thickness is 500 μm, resistivity are 1000-10000 Ω .cm-1；With
Hydrofluoric acid removes silicon face natural oxidizing layer, is washed repeatedly 3 times or more with acetone, alcohol, deionized water successively, and drying is for use；
The 1.2 configuration above-mentioned washed silicon chips of alkaline corrosion solution etches, form micron pyramid structure；Alkaline corrosion solution
For potassium hydroxide, isopropanol, deionized water mixed solution, wherein potassium hydroxide weight percent 4%-5%, isopropyl alcohol
Product percentage is 20%, and the temperature of alkaline corrosion solution is 80-85 DEG C, and the etching reaction time is 12-20 minutes.
The acid etching liquid of 1.3 configurations, acid etching liquid is deionized water, ethyl alcohol, hydrofluoric acid, gold chloride, hydrogen peroxide press 2:
2:1:1:5 volume ratio mixing, wherein hydrogen peroxide is eventually adding, and the etching liquid after preparing is drawn with dropper, is added drop-wise to cleaned
The silicon chip sample surface for having micron pyramid structure form nano aperture structure 3, reaction cleans drying after five minutes；
Above-mentioned sample is heat-treated 30min by 1.4 in argon atmosphere under 900 DEG C of high temperature so that Au ions or Pt ions
Diffuse into Si material lattices；
(2) laser assembles：
Fiber coupled laser diode and fiber optic modulator with 638nm wavelength lasers are selected, laser passes through optical fiber
It exports and is incident on the micro-nano mixed structure of silicon substrate after modulators modulate.
Pyramid structure 2 and nano aperture structure 3 be be sequentially etched in high resistant silicon base 1 with wet etching method and
Into, belong to same silicon materials, there is no interface between each layer, thus with structural stability and prepare simplicity；The semiconductor
The laser that laser 4 generates is coupled into fiber optic modulator 6 by optical fiber 5, the laser light incident through ovennodulation to the silicon substrate micro-nano
On rice mixed structure, so as to generate transmission modulation effect to terahertz wave beam caused by THz source.This Terahertz modulator
For transmission-type.
The modulator forms micro-nano light trapping structure using wet etching technique in silicon face.The structure has pole to laser
Strong absorbability substantially reduces the reflectivity of laser, thus the greatly utilization rate of improving laser；It is introduced in preparation process
Au ions can reduce carrier lifetime, increase modulating speed.Under the pumping laser effect of 300nm-1100nm, exhausted big portion
Shunt excitation light is absorbed and used, and inside configuration will generate a large amount of photo-generated carrier, consumingly hinders the transmission of THz wave, passes through
Laser power is modulated, can realize and THz wave transmission is significantly modulated.The modulator preferably solves modulation depth
The problem of mutually being restricted with modulation rate can work under extremely low laser power, can also be under very big modulation depth
Still there is larger modulation rate.The modulator can be used in THz imaging technology to regulate and control as high-speed wideband THz wave
Device.
Fig. 3 gives ultraviolet-visible-infrared spectrum curve figure of pyramid structure, nano aperture structure, it can be seen that carves
After losing micro-nano structure, in the wave-length coverage of 300nm-1100nm, silicon substrate micro nano structure reflectivity is very low, drops to 10%
Below.This wave band is just common laser wavelength.
Fig. 4 gives air reference signal, comparison silicon chip and silicon substrate micro nano structure sample and makees in different laser powers
Terahertz time-domain spectroscopy comparison diagram under；Fig. 5 gives silicon chip and silicon substrate micro nano structure is corresponding with laser power variation
Terahertz transmittance graph comparison diagram.From two figures it can be seen that compared with common high resistant silicon chip, silicon substrate micro nano structure is same
Under one laser power, modulation depth is far longer than High Resistivity Si.Especially under low laser power, silicon substrate micro nano structure advantage and its
Significantly：In 0.2w, silicon chip transmissivity about 65%, and silicon substrate micro nano structure only has 30% or so, is calculated as modulation depth, this
When silicon chip there was only 7%, silicon substrate micro nano structure has reached 57%；Silicon substrate micro nano structure maximum modulation is on 95% left side in experiment
The right side almost has been switched off, and silicon chip only has 30% or so.Silicon substrate micro nano structure modulating performance has huge advantage.
Fig. 6 is given in the case where 340GHz fixes continuous source, and High Resistivity Si and silicon substrate micro nano structure swash in 10KHz and 20KHz
Oscillogram under light frequency, it can be seen that under same frequency, silicon substrate micro nano structure modulation depth is all significantly greater than High Resistivity Si.
In 20KHz, silicon substrate micro nano structure still has good response, and silicon illustrates silicon substrate micro nano structure close to triangular wave
Modulation rate increased than silicon.By calculating the time needed for the rising edge and failing edge of adjustment curve, modulation can be calculated
The limit modulation rate of device can reach more than 3MHz.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought
All equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of light-operated terahertz wave modulator of micro-nano mixed structure of silicon substrate, it is characterised in that：Including silicon base (1), it is located at
The micron pyramid structure (2) on silicon base (1) surface, the nano aperture structure for being distributed in a micron pyramid structure (2) surface
(3), the semiconductor laser (4) of fiber optic modulator (6) connected by optical fiber (5), be irradiated to for exporting modulating lasering beam (9)
Fiber optic modulator (6) on micron pyramid structure (2), the micron pyramid structure (2) are tetragonous wimble structure, the silicon substrate
Bottom (1), micron pyramid structure (2), nano aperture structure (3) form the micro-nano mixed structure of silicon substrate；The micron pyramid
Structure (2) and nano aperture structure (3) are sequentially etched in silicon base (1) with wet etching method, and the two belongs to
Same silicon materials；The terahertz wave beam (10) that Terahertz wave source (7) generates is incident in a micron pyramid structure (2), Terahertz
Detector (8) is for receiving terahertz signal of the Terahertz wave source (7) by the micro-nano mixed structure of silicon substrate.
2. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：
The silicon base (1) is using High Resistivity Si, the Ω .cm of resistivity >=1000-1。
3. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：
The micron pyramid structure (2) is that silicon base (1) is etched to obtain using alkaline process, and characteristic size is micron dimension, pyramid
The height and the bottom surface length of side of structure are between 5 μm~15 μm.
4. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：Institute
It is that micron pyramid structure (2) is etched to obtain using metal ion auxiliary acid system to state nano aperture structure (3), is hole shape,
Hole diameter and depth are between 10nm~100nm, wherein the metal ion for etching is only limitted to Au and Pt.
5. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：
Nano aperture structure (3) preparation after the completion of, be heat-treated 30min under 900 DEG C of high temperature in argon atmosphere so that Au or Pt from
Son diffuses into Si material lattices.
6. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：
Modulating lasering beam (9) output wavelength is the laser of 638nm, and laser intensity is more than 10mw/mm2。
7. a kind of light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate according to claim 1, it is characterised in that：
Modulator can be operated in down to 10mW/mm2Extremely low laser power under, as laser power >=300mW/mm2When, THz wave tune
The highest modulation depth of device processed reaches 95%, and highest modulating speed reaches 3MHz.
8. the preparation method of the light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate described in claim 1 to 7 any one,
It is characterized by comprising following steps：
(1) the micro-nano mixed structure of silicon substrate is prepared：
The low-doped Si pieces that 1.1 choose twin polishing, thickness is 500 μm, resistivity are 1000-10000 Ω .cm-1；With hydrogen fluorine
Acid removes silicon face natural oxidizing layer, is washed repeatedly 3 times or more with acetone, alcohol, deionized water successively, and drying is for use；
The 1.2 configuration above-mentioned washed silicon chips of alkaline corrosion solution etches, form micron pyramid structure；
The acid etching liquid of 1.3 configurations, wherein hydrogen peroxide are eventually adding, and the etching liquid after preparing is drawn with dropper, is added drop-wise to cleaning
The good silicon chip sample surface for having micron pyramid structure forms nano aperture structure (3), and reaction cleans drying after five minutes；
Above-mentioned sample is heat-treated 30min by 1.4 in argon atmosphere under 900 DEG C of high temperature so that Au ions or the diffusion of Pt ions
Into Si material lattices；
(2) laser assembles：
Fiber coupled laser diode and fiber optic modulator with 638nm wavelength lasers are selected, laser is modulated by optical fiber
It exports and is incident on the micro-nano mixed structure of silicon substrate after device modulation.
9. the preparation method of the light-operated Terahertz modulator of the micro-nano mixed structure of silicon substrate according to claim 8, feature
It is：The alkaline corrosion solution of step 1.2 is potassium hydroxide, the mixed solution of isopropanol, deionized water, wherein potassium hydroxide
Weight percent 4%-5%, isopropanol percent by volume are 20%, and the temperature of alkaline corrosion solution is 80-85 DEG C, etching reaction
Time is 12-20 minutes.
10. the preparation method of the light-operated Terahertz modulator of the micro-nano mixed structure of silicon substrate according to claim 8, feature
It is：The acid etching liquid of step 1.3 is deionized water, ethyl alcohol, hydrofluoric acid, gold chloride, hydrogen peroxide press 2:2:1:1:5 volume
Than mixing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810054212.6A CN108254944A (en) | 2018-01-19 | 2018-01-19 | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof |
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| CN201810054212.6A CN108254944A (en) | 2018-01-19 | 2018-01-19 | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof |
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Cited By (6)
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| CN109031705A (en) * | 2018-08-02 | 2018-12-18 | 上海理工大学 | Carbon nanotube enhances Terahertz silicon grating modulator and production method |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
| CN110244475A (en) * | 2019-05-20 | 2019-09-17 | 东莞理工学院 | A kind of low-power consumption, the light-operated Terahertz modulator of filter with low insertion loss and preparation method thereof |
| CN110649450A (en) * | 2019-10-12 | 2020-01-03 | 华东师范大学重庆研究院 | Wide-spectrum terahertz wave generation device based on femtosecond optical fibers and super-continuum spectrum |
| CN111123417A (en) * | 2020-01-13 | 2020-05-08 | 北京航空航天大学 | Terahertz wave stealth device with high efficiency and wide frequency band |
| CN114200694A (en) * | 2021-12-02 | 2022-03-18 | 首都师范大学 | Light-operated terahertz wave modulation chip and preparation method thereof |
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| CN109031705A (en) * | 2018-08-02 | 2018-12-18 | 上海理工大学 | Carbon nanotube enhances Terahertz silicon grating modulator and production method |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
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| CN110649450A (en) * | 2019-10-12 | 2020-01-03 | 华东师范大学重庆研究院 | Wide-spectrum terahertz wave generation device based on femtosecond optical fibers and super-continuum spectrum |
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| CN111123417A (en) * | 2020-01-13 | 2020-05-08 | 北京航空航天大学 | Terahertz wave stealth device with high efficiency and wide frequency band |
| CN114200694A (en) * | 2021-12-02 | 2022-03-18 | 首都师范大学 | Light-operated terahertz wave modulation chip and preparation method thereof |
| CN114200694B (en) * | 2021-12-02 | 2023-10-10 | 首都师范大学 | Light-operated terahertz wave modulation chip and preparation method thereof |
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Application publication date: 20180706 |