CN111095535B - 封装体和半导体装置 - Google Patents

封装体和半导体装置 Download PDF

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CN111095535B
CN111095535B CN201780094714.5A CN201780094714A CN111095535B CN 111095535 B CN111095535 B CN 111095535B CN 201780094714 A CN201780094714 A CN 201780094714A CN 111095535 B CN111095535 B CN 111095535B
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若園芳嗣
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NGK Insulators Ltd
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Abstract

本发明的封装体具有基座板(10)、框体(100)和引线框(20A、20B)。基座板(10)具有安装半导体元件(300)的安装区域(11)和包围安装区域(11)的框区域(12)，由金属构成。框体(100)设置在基座板(10)的框区域(12)上，具有面向框区域(12)的第一面(S1)和与第一面(S1)相反的第二面(S2)。引线框(20A、20B)与框体(100)的第二面(S2)接合。框体(100)包括具有层叠结构的多个电介质层(110)和与半导体元件(300)电连接的元件连接部(121A、121B)。多个电介质层(110)包含具有第一介电常数的第一电介质层和具有与第一介电常数不同的第二介电常数的第二电介质层。

Description

封装体和半导体装置
技术领域
本发明涉及封装体和半导体装置，特别涉及具有引线框的封装体和具有封装体的半导体装置。
背景技术
在大多数情况下，功率扩增器等半导体装置具有半导体元件和安装该半导体元件的封装体。在封装体中，大多数情况下设置有多个引线框。引线框可以具有作为半导体装置的输入端子或输出端子的功能。输入端子以及输出端子分别具有输入阻抗以及输出阻抗作为特性阻抗，期望这些值与外部的电气***匹配。电气***的特性阻抗作为典型的例子被标准化为50Ω。在半导体装置的特性阻抗与所希望的阻抗偏离较大的情况下，需要用于调整特性阻抗的匹配电路。如果封装体本身具有该匹配电路的功能，则不需要在封装体外附加匹配电路。由此，能够削减部件数量。另外，作为整体容易抑制包含匹配电路的装置的尺寸。
日本特开2014-107398号公报(专利文献1)所记载的技术公开了在高频装置的馈通部附加阻抗的调整功能。具体而言，高频装置具有：具有主面的基座板、电介质、信号线、岛状图案、金属框、引线框、半导体芯片、以及导线。电介质以沿着上述底板的一侧面的方式形成于上述主面。信号线在上述电介质上以从上述一侧面侧向上述主面的中央部延伸的方式形成。岛状图案在上述电介质之上的上述信号线的旁边，以从上述一侧面侧向上述中央部延伸且不与上述信号线接触的方式由金属形成。金属框具有与上述主面接触的接触部、以及经由形成于上述信号线的一部分以及上述岛状图案的一部分的追加电介质而形成于上述信号线以及上述岛状图案之上的桥状部。上述接触部和上述桥接部作为整体包围上述中央部。引线框与上述信号线中的位于上述金属框的外侧的部分即外侧信号线连接。半导体芯片固定于上述中央部。导线将上述半导体芯片与上述信号线中的被上述金属框包围的部分即内侧信号线连接。
现有技术文献
专利文献
专利文献1：日本特开2014－107398号公报
发明内容
(发明要解决的课题)
在仅使用上述公报所记载的技术时，即使能够对特性阻抗进行微调，有时也难以得到充分的阻抗匹配。特别是，在安装有具有1欧姆左右的低输出阻抗的半导体元件的情况下，将输出来自该半导体元件的信号的引线框的输出阻抗调整为50欧姆左右需要较大的阻抗调整，对于上述技术而言是困难的。
本发明是为了解决以上那样的课题而完成的，其目的在于提供一种能够更充分地进行阻抗匹配的封装体。
(用于解决课题的技术方案)
根据本发明的一个方面的封装体具有基座板、框体以及引线框。基座板具有安装半导体元件的安装区域和包围安装区域的框区域，且由金属构成。框体设置在基座板的框区域上，具有面向框区域的第一面和与第一面相反的第二面。引线框与框体的第二面接合。框体包括具有层叠结构的多个电介质层和与半导体元件电连接的元件连接部。多个电介质层包含具有第一介电常数的第一电介质层和具有与第一介电常数不同的第二介电常数的第二电介质层。
根据本发明的另一方面的封装体具有基座板、框体以及引线框。基座板具有安装半导体元件的安装区域和包围安装区域的框区域，且由金属构成。框体设置在基座板的框区域上，具有面向框区域的第一面以及与第一面相反的第二面。引线框与框体的第二面接合。框体包括具有层叠结构的多个电介质层以及与半导体元件电连接的元件连接部。元件连接部在第二面上与引线框电分离。
(发明效果)
根据本发明的一个方面的封装体，封装体的框体包含具有第一介电常数的第一电介质层和具有与第一介电常数不同的第二介电常数的第二电介质层。由此，使用框体进行阻抗匹配的结构的设计的自由度提高。因此，能够更充分地进行使用封装体的框体的阻抗匹配。
根据本发明的另一方面的封装体，元件连接部在框体的第二面上与引线框架电分离。由此，设置在元件连接部与引线框之间的匹配电路并不限于在框体的第二面上短路的电路。因此，容易更充分地进行使用框体的阻抗匹配。
附图说明
图1是沿着图2的线I-I概略地表示本发明的实施方式中的半导体装置的结构的截面图。
图2是在省略盖体的图示的同时概略地表示本发明的实施方式中的半导体装置的结构的俯视图。
图3是表示本发明的实施方式中的半导体装置的等效电路的一个例子的电路图。
图4是表示变形例的半导体装置的结构的截面图。
具体实施方式
以下，基于附图对本发明的实施方式进行说明。
图1是沿着图2的线I-I概略地表示本实施方式中的半导体装置700的结构的截面图。图2是在省略盖体500的图示的同时概略地表示半导体装置700的结构的俯视图。
半导体装置700具有半导体元件300、布线部400A、400B、盖体500以及封装体。封装体具有基座板10、框体100和引线框20A、20B。盖体500通过安装在框体100上，从而对被框体100包围的空腔CV(图1)进行密封。盖体500由绝缘体构成。盖体500的安装例如可以使用粘结剂来进行。
基座板10具有安装半导体元件300的安装区域11和包围安装区域11的框区域12。基座板10由金属构成。
半导体元件300安装在基座板10的安装区域11上。半导体元件300具有半导体部301、端子312A、312B和背面电极311。
引线框20A、20B与框体100的框上表面S2接合。引线框20A、20B在平面布局(图2的视野)中向框体100的外侧突出。引线框20A、20B由金属构成。
框体100设置在基座板10的框区域12上。框体100具有面向框区域12的框下表面S1(第一面)和框上表面S2(第一面的相反的第二面)。框体100具有：具有层叠结构的多个电介质层110、元件连接部121A、121B、至少一个通孔电极140(在图1所示的例子中为多个通孔电极140)、框连接部122A、122B、至少一个电极层130(在图1所示的例子中为多个电极层130)、以及基座连接部125。
元件连接部121A、121B设置在框上表面S2上。元件连接部121A、121B由金属构成。元件连接部121A、121B与半导体元件300电连接。元件连接部121A、121B在框上表面S2上与引线框20A、20B电分离。
在图1所示的例子中，多个电介质层110具有：下部电介质层111、上部电介质层112和中间电介质层113、114。下部电介质层111直接或经由基座连接部125而形成了框体100的框下表面S1。上部电介质层112直接或经由电极结构而形成了框体100的框上表面S2，该电极结构是框连接部122A、122B或元件连接部121A、121B。中间电介质层113、114被夹在下部电介质层111与上部电介质层112之间。
多个电介质层110包含具有第一介电常数的第一电介质层和具有与第一介电常数不同的第二介电常数的第二电介质层。具体而言，第一电介质层和第二电介质层的材料优选为以下5种当中的任一种：
电介质(1)：BaO-Al2O3-SiO2-Bi2O3(k＝7)
电介质(2)：BaO-TiO2-ZnO(k＝27)
电介质(3)：BaO-Nd2O3-Bi2O3-TiO2(k＝81)
电介质(4)：BaO-R2O3-TiO2(k＝125)
电介质(5)：high-k材料(k≥1000)
需要说明的是，在上述中，括号内的值k是典型的相对介电常数。第一电介质层的电介质和第二电介质层的电介质以相互不同的方式选择。因此，优选第一及第二电介质层中的至少任一者为上述电介质(1)～(4)中的任意一者。high-k材料例如可以是钛酸钡或钛酸钡系材料。通过以上那样的材料选择，能够将电介质层110的层叠体在其内部设置电极结构的同时并容易地形成为低温共烧陶瓷(Low Temperature Co-fired Ceramics(LTCC))。
电极层130被夹在多个电介质层110之间。通孔电极140贯通多个电介质层110中的至少任意一者。通孔电极140的一端可以与元件连接部121A或121B相连。另外，通孔电极140也可以与电极层130相连。通孔电极140也可以与框连接部122A或122B连接。基座连接部125与基座板10的框区域12接合。
框连接部122A、122B设置在框体100的框上表面S2上。换言之，框连接部122A、122B设置在上部电介质层112上。框连接部122A、122B由金属构成。框连接部122A及122B分别与引线框20A及20B连接。元件连接部121A、121B在框上表面S2上与引线框20A、20B电分离。
布线部400A将框体100的元件连接部121A与半导体元件300的端子312A之间连接。布线部400B将框体100的元件连接部121B与半导体元件300的端子312B之间连接。布线部400A、400B典型的是接合线。
图3是表示半导体装置700的等效电路的一例的电路图。在本例中，半导体装置700是具有作为输入端子的引线框20A、和作为输出端子的引线框20B的功率扩增装置。为了使输入阻抗以及输出阻抗分别最佳化，使用框体100构成输入匹配电路100A以及输出匹配电路100B。输入匹配电路100A如图所示具有电容器181和电感器182。输出匹配电路100B具有电容器183、184和电感器185。这些电容器以及电感器主要由框体100构成，但也可以有来自引线框20A、20B、基座板10以及布线部400A、400B的贡献。根据本实施方式的框体100，与使用仅具有更简单的内部结构的框体的情况相比，能够容易地实现图示的等效电路。
另外，通过使用由上述电介质(1)构成的电介质层，能够形成具有高Q的电感器。另外，通过使用上述电介质层(3)～(5)中的至少任意一者，能够形成每单位面积具有高电容的电容器。另外，也可以从确保耐电压的观点出发选择电介质的种类。
另外，在本例中，半导体元件300是具有作为输入端子的端子312A、作为输出端子的端子312B、和作为接地端子的背面电极311的功率扩增元件。端子312B能够以5欧姆以下的特性阻抗输出来自半导体元件300的电信号。即使在这样的情况下，通过使用输出匹配电路100B，引线框20B也能够以标准的50欧姆特性阻抗输出上述电信号。另外，即使在期待标准的50欧姆的输出阻抗的情况下，通常也允许一定程度的阻抗误差，例如允许误差为5欧姆左右。同样地，通过使用输入匹配电路100A，引线框20A能够以标准的50欧姆的特性阻抗接受向半导体元件300的电信号。
(效果)
根据本实施方式，封装体的框体100包含：具有第一介电常数的第一电介质层、和具有与第一介电常数不同的第二介电常数的第二电介质层。由此，使用框体进行阻抗匹配的结构的设计的自由度提高。因此，能够更充分地进行使用封装体的框体的阻抗匹配。例如，通过在形成具有高电容的电容器的区域应用具有高介电常数的电介质，能够抑制框体100的尺寸。此时，对于需要高耐电压的区域，可以优选绝缘可靠性而应用具有更低的介电常数的电介质。
框体100的元件连接部121A、121B在框上表面S2上与引线框20A、20B电分离。由此，设置在元件连接部121A、121B与引线框20A、20B之间的匹配电路不限于在框上表面S2上短路的电路。因此，容易更充分地进行使用封装体的框体100的阻抗匹配。特别是，容易构成输出匹配电路100B(图3)那样的电路。
框体100具有贯通多个电介质层110中的至少任意一者的至少一个通孔电极140。由此，使用框体100进行阻抗匹配的结构的设计的自由度提高。因此，能够更充分地进行使用封装体的框体的阻抗匹配。
至少一个通孔电极140包含与框体100的元件连接部121A、121B相连的通孔电极140。由此，使用框体100进行阻抗匹配的结构的设计的自由度提高。因此，能够更充分地进行使用封装体的框体的阻抗匹配。通孔电极140包含与框连接部122A、122B相连的通孔电极140。由此，能够从引线框20A、20B向电介质层110的层叠体内部设置由金属构成的电气路径。
框体100具有夹在多个电介质层110之间的至少一个电极层130。由此，使用框体100进行阻抗匹配的结构的设计的自由度提高。因此，能够更充分地进行使用封装体的框体的阻抗匹配。
半导体元件300的端子312A、312B常常以5欧姆以下的特性阻抗输出来自半导体元件300的电信号。本实施方式的封装体作为输出匹配电路100B(图3)而发挥功能，由此引线框20B能够以50欧姆的特性阻抗输出上述电信号。由此，无需在半导体装置700外进一步附加匹配电路就能够以50欧姆这样的标准的输出阻抗进行输出。
(变形例)
框体100的结构能够根据所需的阻抗匹配来适当变更。具体而言，多个电介质层110也可以全部具有相同的介电常数。元件连接部121A、121B也可以在框上表面S2上不与引线框20A、20B电分离。也可以省略通孔电极140。通孔电极140也可以均与框体100的元件连接部121A、121B分离。也可以省略框连接部122A、122B。通孔电极140也可以均与框连接部122A、122B分离。也可以省略电极层130。也可以省略基座连接部125。多个电介质层110的数量虽然在图1中为4个，但可以是2个以上的任意的数量。在多个电介质层110的数量为2个的情况下，不存在中间电介质层。此外，通过框体100，除了构成匹配电路之外，还可以构成其他电路。
另外，在上述实施方式中的半导体装置700中，其匹配电路实质上由框体100构成，但匹配电路也可以由框体和其他部件构成。图4是表示这样的变形例的半导体装置700V的截面图。作为与半导体装置700的不同点，在半导体装置700V中，设置有与框体100一起构成输入匹配电路的电介质元件801、和与框体100一起构成输出匹配电路的电介质元件802。框体100的元件连接部121A与半导体元件300之间经由电介质元件801通过布线部400A连接。另外，框体100的元件连接部121B与半导体元件300之间经由电介质元件802通过布线部400B连接。电介质元件801和802可以安装在安装区域11上。
虽然对本发明进行了详细说明，但上述的说明在所有的方面都是例示，本发明并不限定于此。应当理解，在不脱离本发明的范围的情况下能够想到没有例示的无数的变形例。
符号说明
CV 空腔
S1 框下表面(第一面)
S2 框上表面(第二面)
10 基座板
11 安装区域
12 框区域
121A、121B 元件连接部
20A、20B 引线框
100 框体
100A 输入匹配电路
100B 输出匹配电路
110 电介质层
122A、122B 框连接部
130 电极层
140 通孔电极
181、183、184 电容器
182、185 电感器
300 半导体元件
301 半导体部
311 背面电极
312A、312B 端子
400A、400B 布线部
500 盖体
700 半导体装置。

Claims (7)

1.一种封装体，其特征在于，具备：
基座板(10)，其具有安装半导体元件(300)的安装区域(11)和包围所述安装区域(11)的框区域(12)，且由金属构成；
框体(100)，其设置在所述基座板(10)的所述框区域(12)上，具有面向所述框区域(12)的第一面(S1)以及与所述第一面(S1)相反的第二面(S2)；以及
引线框(20A、20B)，其与所述框体(100)的所述第二面(S2)接合，
所述框体(100)包含具有层叠结构的多个电介质层(110)以及与所述半导体元件(300)电连接的元件连接部(121A、121B)，所述多个电介质层(110)包含具有第一介电常数的第一电介质层和具有第二介电常数的第二电介质层，所述第二介电常数与所述第一介电常数不同，
所述框体(100)的所述元件连接部(121A、121B)在所述第二面(S2)上与所述引线框(20A、20B)电分离。
2.根据权利要求1所述的封装体，其中，
所述框体(100)具有贯通所述多个电介质层(110)中的至少任意一者的至少一个贯通电极(140)。
3.根据权利要求2所述的封装体，其中，
所述至少一个贯通电极(140)包含与所述框体(100)的所述元件连接部(121A、121B)相连的贯通电极(140)。
4.根据权利要求2所述的封装体，其中，
所述框体(100)具有与所述引线框(20A、20B)连接的框连接部(122A、122B)，
所述至少一个贯通电极(140)包含与所述框连接部(122A、122B)相连的贯通电极(140)。
5.根据权利要求1所述的封装体，其中，
所述框体(100)具有夹在所述多个电介质层(110)之间的至少一个电极层(130)。
6.一种半导体装置(700)，其特征在于，具备：
权利要求1至5中任一项所述的封装体；
半导体元件(300)，其安装于所述封装体的所述基座板(10)的所述安装区域11上，且具有端子(312A、312B)；以及
布线部(400A、400B)，其将所述封装体的所述框体(100)的所述元件连接部(121A、121B)与所述半导体元件(300)的所述端子(312A、312B)之间进行连接。
7.根据权利要求6所述的半导体装置(700)，其中，
所述半导体元件(300)的所述端子(312A、312B)以5欧姆以下的特性阻抗输出来自所述半导体元件(300)的电信号，所述引线框(20A、20B)以50欧姆的特性阻抗输出所述电信号。
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