CN111081670A - 一种低成本银基键合合金丝及其制备方法和应用 - Google Patents
一种低成本银基键合合金丝及其制备方法和应用 Download PDFInfo
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- 229910052709 silver Inorganic materials 0.000 title claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 49
- 239000000956 alloy Substances 0.000 title claims abstract description 49
- 239000004332 silver Substances 0.000 title claims abstract description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005266 casting Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000011573 trace mineral Substances 0.000 claims abstract description 7
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 7
- 238000005491 wire drawing Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000009749 continuous casting Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000003723 Smelting Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910002710 Au-Pd Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002932 luster Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
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Abstract
本发明公开了一种低成本银基键合合金丝及其制备方法和应用,属于键合丝加工技术领域。本发明所述的银基键合合金丝,组分以质量百分比计,其组成为:Ag 97.0‑99.9wt%,Cu 0.1‑3.0wt%,并添加微量元素Pt 20‑250ppm,Ce 20‑250ppm,Ti 20‑250ppm,Ni 20‑250ppm,Y 20‑250ppm,经过熔铸、拉丝、退火和冷却工序后,制成线径为18‑50μm的银基键合合金丝。本发明以高纯银为基材,添加少量铜和微量合金元素,降低银键合丝的原料成本和制备能耗,提高产线效率,同时提供高断裂负载和稳定的延伸率,满足不同电子封装的力学拉伸要求,键合异常断线频率低,具有优异的键合实用性和适用性;适用于大规模集成电路微型化封装,也适用于分立器件封装。
Description
技术领域
本发明涉及一种低成本银基键合合金丝及其制备方法和应用,属于键合丝加工技术领域。
背景技术
键合丝(Bonding Wire)属于半导体封装材料,用于实现半导体芯片与引脚的电气连接,起着电流和信号输入、导出的作用。随着半导体产业朝向产量剧增、小型化、模块化和高集成化发展,这要求键合丝在性能上具有优异的力学性能、导电导热、键合性能和抗腐蚀性,在宏观结构上拥有更细的线径以利于引线键合中更窄的线间距和更低的线弧高。
键合丝按组分分类有:铝丝、金丝、铜丝和银丝。其中,银键合丝有与金丝相似的力学性能,比金丝更优异的导电导热性能和光泽,成本为金丝的1/4,抗氧化性比铜丝好,成为替代金丝和铜丝的一种键合丝材料。但是,银键合丝质地偏软导致力学性能低,在拉丝和引线键合工序中易断裂,且易遭到环境中的氧和硫腐蚀。
现有银基键合丝通过银(Ag)和金(Au)、钯(Pd)固溶合金化来改善银丝的力学性能、导电导热、键合性能和抗腐蚀性。但是,在实际应用中,Pd和Au在银基材中固溶不均匀会使Ag-Au-Pd体系键合丝延伸率不稳定,造成异常断线,影响键合效率;Ag-Au-Pd体系键合丝无法采用固溶高含量Pd(电阻率增高)实现高断裂负载以满足低线弧键合;另外,Au的价格波动和Pd的价格上升,影响成本的管控。
发明内容
本发明所解决的技术问题是提供一种低成本的银基键合合金丝及其制备方法和应用,这种银基键合合金丝具有低成本、低制备能耗、高产线效率的特点,且具有高断裂负载和稳定的延伸率,可实现多种引线键合作业与提高键合稳定性。采用的技术方案如下:
一种银基键合合金丝,组分以质量百分比计,其组成为:Ag 97.0-99.9wt%,Cu0.1-3.0wt%,并添加微量元素Pt 20-250ppm,Ce 20-250ppm,Ti 20-250ppm,Ni 20-250ppm,Y 20-250ppm。
本发明的银基键合合金丝中,Cu(铜)在0.1-3.0wt%的配比时,Ag和Cu能形成Ag-Cu二元固溶体,增加银丝的强度,表现为断裂负载高,可应用于低线弧或高低线引线键合;其次,Ag的熔点为960.5℃,Cu的熔点为1083℃,在超过铜熔点的熔炼温度下,Ag和Cu通过液相扩散更易实现均匀固溶,使键合合金丝成分和晶粒均匀,表现为延伸率浮动小,减少键合异常断线频率,提高键合稳定性;并且,Cu的市场价格稳定便宜,也无需过高的熔炼温度(不超过1200℃)和过多制备操作,如中间退火,制备的退火过程可在更低的温度区间(400-500℃)和更快的退火速度(60-80m/min)下即可消除键合丝的机械应力和晶界缺陷,降低原料成本和制备能耗和提高产线效率。
本发明的银基键合合金丝中,微量元素Pt(铂)有助于提升键合丝的抗腐蚀性和耐高温能力;Ce(铈)有助于细化键合丝的晶粒大小,提升热影响区(HAZ)强度;Ti(钛)有助于提升键合丝的抗氧化性,弥补铜氧化的负面影响;Ni(镍)有助于提升键合丝的光泽和抗腐蚀性;Y(钇)有助于增强键合丝的延展率、韧性和高温强度。五种微量元素协同作用于银基键合丝,有效解决抗腐蚀性问题,提升综合性能。
本发明还提供上述银基键合合金丝的一种制造方法,包括下述步骤:
(1)熔铸:将Ag、Cu和微量元素组成的母材进行真空熔炼和定向连续引铸工艺制成棒材;
(2)拉丝:将步骤(1)得到的棒材进行拉丝工艺得到直径为18-50μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝进行退火处理,退火过程中采用氢气和氮气体积百分比为5:95的氢氮混合保护气体,退火温度为400-500℃,退火速度为60-80m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至20-30℃,得到所述的银基键合合金丝。
本发明的银基键合合金丝具有良好的实用性和适用性,可应用于各类集成电路和分立器件。
本发明的银基键合合金丝具有以下有益效果:
(1)银中固溶铜能降低银键合丝原料成本,无需过高的熔炼温度和中间退火以减少制备能耗,可用低的退火温度和快的退火速度进行退火处理以降低能耗和提高产线效率;
(2)高断裂负载。本发明的银基键合合金丝的断裂负载比纯Ag键合丝的断裂负载提高至少30%,比Ag-Au-Pd键合丝的断裂负载提高至少5%;
(3)稳定的延伸率。由于铜和微量元素作用,本发明的银基键合合金丝的延伸率范围能稳定在3%以内,较纯Ag键合丝和Ag-Au-Pd键合丝的延伸率范围有大幅缩短。
(4)可低线弧或高低线引线键合,键合异常断线频率低,具有良好的实用性和适用性。
具体实施方式
提供下述实施例是为了更好地进一步理解本发明,不对本发明的内容和保护范围构成限制,本发明并不局限于所述最佳实施方式,任何人在本发明的启示下或是将本发明与其他现有技术的特征进行组合而得出的任何与本发明相同或相近似的产品,均落在本发明的保护范围之内。
实施例中未注明具体实验步骤或条件者,按照本领域内的文献所描述的常规实验步骤的操作或条件即可进行。所用试剂或仪器未注明生产厂商者,均为可以通过市购获得的常规产品。
实施例1
本实施例提供了一种银基键合合金丝的具体实施方式,如下所述:
(1)熔铸:将纯度为99.99%的Ag 995.0g,纯度为99.99%的Cu 5.0g,并添加Pt40ppm,Ce 40ppm,Ti 40ppm,Ni 40ppm,Y 40ppm,一同投入坩埚,混合后在高于9.8×10-4Pa真空度下熔炼,真空熔炼的温度为1100℃,接着定向连续引铸制成合金棒材,所述合金棒材直径为8mm;
(2)拉丝:将步骤(1)得到的ф8mm棒材进行粗拉、中拉、细拉、超细拉丝工艺得到直径为20μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝在氢气和氮气体积百分比为5:95的氢氮混合保护气体下进行退火热处理,退火温度为400℃,退火速度为80m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至30℃,得到所述的银基键合合金丝。
实施例2
本实施例提供了一种银基键合合金丝的具体实施方式,如下所述:
(1)熔铸:将纯度为99.99%的Ag 990.0g,纯度为99.99%的Cu10.0g,并添加Pt80ppm,Ce 80ppm,Ti 80ppm,Ni 80ppm,Y 80ppm,一同投入坩埚,混合后在高于9.8×10-4Pa真空度下熔炼,真空熔炼的温度为1150℃,接着定向连续引铸制成合金棒材,所述合金棒材直径为8mm;
(2)拉丝:将步骤(1)得到的ф8mm棒材进行粗拉、中拉、细拉、超细拉丝工艺得到直径为20μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝在氢气和氮气体积百分比为5:95的氢氮混合保护气体下进行退火热处理,退火温度为450℃,退火速度为70m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至25℃,得到所述的银基键合合金丝。
实施例3
本实施例提供了一种银基键合合金丝的具体实施方式,如下所述:
(1)熔铸:将纯度为99.99%的Ag 970.0g,纯度为99.99%的Cu 30.0g,并添加Pt240ppm,Ce 240ppm,Ti 240ppm,Ni 240ppm,Y 240ppm,一同投入坩埚,混合后在高于9.8×10-4Pa真空度下熔炼,真空熔炼的温度为1200℃,接着定向连续引铸制成合金棒材,所述合金棒材直径为8mm;
(2)拉丝:将步骤(1)得到的ф8mm棒材进行粗拉、中拉、细拉、超细拉丝工艺得到直径为20μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝在氢气和氮气体积百分比为5:95的氢氮混合保护气体下进行退火热处理,退火温度为500℃,退火速度为60m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至20℃,得到所述的银基键合合金丝。
对比例1
本实施例提供了一种键合合金丝的具体实施方式,如下所述:
(1)熔铸:将纯度为99.99%的Ag 1000.0g,并添加Pt 100ppm,Ce 100ppm,Ti100ppm,Ni 100ppm,Y 100ppm,一同投入坩埚,混合后在高于9.8×10-4Pa真空度下熔炼,真空熔炼的温度为1200℃,接着定向连续引铸制成合金棒材,所述合金棒材直径为8mm;
(2)拉丝:将步骤(1)得到的ф8mm棒材进行粗拉、中拉、细拉、超细拉丝工艺得到直径为20μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝在氢气和氮气体积百分比为5:95的氢氮混合保护气体下进行退火热处理,退火温度为500℃,退火速度为60m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至25℃,得到纯银键合丝。
对比例2
本实施例提供了一种键合合金丝的具体实施方式,如下所述:
(1)熔铸:将纯度为99.99%的Ag 9900.0g,纯度为99.99%的Au 60.0g,纯度为99.99%的Pd 40.0g,并添加Pt 100ppm,Ce 100ppm,Ti 100ppm,Ni 100ppm,Y 100ppm,一同投入坩埚,混合后在高于9.8×10-4Pa真空度下熔炼,真空熔炼的温度为1200℃,接着定向连续引铸制成合金棒材,所述合金棒材直径为8mm;
(2)拉丝:将步骤(1)得到的ф8mm棒材进行粗拉、中拉、细拉、超细拉丝工艺得到直径为20μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝在氢气和氮气体积百分比为5:95的氢氮混合保护气体下进行退火热处理,退火温度为500℃,退火速度为60m/min;
(4)冷却;将步骤(3)得到退火丝进行悬滴液清洗,冷却至25℃,得到Ag-6.0Au-4.0Pd银基键合丝。
实验例1断裂负载测试
测试方法:对实施例1-3,对比例1-2所述键合丝进行断裂负载测试,取100mm成品线材放置于拉力测试仪,拉伸速度为10mm/min,当线材被拉断后,记录下断裂负载(BL,cN),同一制备方法的键合丝依次进行10次测试并取平均值,如表1所示。
表1实施例1-3,对比例1-2所得键合丝断裂负载测试结果
实验例2延伸率浮动范围测试
测试方法:对实施例1-3,对比例1-2所述键合丝进行延伸浮动范围测试,取100mm成品线材放置于拉力测试仪,拉伸速度为10mm/min,当线材被拉断后,记录下延伸率(EL,%),同一制备方法的键合丝依次进行100次,得到延伸率浮动范围,如表2所示。
表2实施例1-3,对比例1-2所得键合丝延伸率浮动范围测试结果
Claims (8)
1.一种银基键合合金丝,其特征在于,组分以质量百分比计,其组成为:Ag 97.0-99.9wt%,Cu 0.1-3.0wt%,并添加有微量元素Pt20-250ppm,Ce 20-250ppm,Ti 20-250ppm,Ni 20-250ppm,Y 20-250ppm。
2.根据权利要求1所述的银基键合合金丝,其特征在于,以质量百分比计,其组成为:Ag99.5wt%,Cu 0.5wt%,并添加有Pt 40ppm,Ce 40ppm,Ti 40ppm,Ni 40ppm,Y 40ppm。
3.根据权利要求1所述的银基键合合金丝,其特征在于,以质量百分比计,其组成为:Ag99.0wt%,Cu 1.0wt%,并添加有Pt 80ppm,Ce 80ppm,Ti 80ppm,Ni 80ppm,Y 80ppm。
4.根据权利要求1所述的银基键合合金丝,其特征在于,以质量百分比计,其组成为:Ag97.0wt%,Cu 3.0wt%,并添加有Pt 240ppm,Ce 240ppm,Ti 240ppm,Ni 240ppm,Y 240ppm。
5.根据权利要求1所述的银基键合合金丝,其特征在于,所述Ag和Cu的纯度均至少为99.99%。
6.根据权利要求1所述的银基键合合金丝,其特征在于,所述键合合金丝的线径为18-50μm。
7.权利要求1所述的银基键合合金丝的制备方法,其特征在于,包括以下步骤:
(1)熔铸:将银基材与其他合金元素组成的母材按照比例进行真空熔炼,经定向连续引铸工艺制成棒材;
(2)拉丝:将步骤(1)得到的棒材经拉丝工艺得到直径为18-50μm的银合金丝;
(3)退火:将步骤(2)得到的银合金丝进行退火处理,退火过程中采用氢气和氮气体积百分比为5:95的氢氮混合保护气体,退火温度为400-500℃,退火速度为60-80m/min;
(4)冷却:将步骤(3)得到的退火丝进行悬滴液清洗,冷却至20-30℃,得到所述的银基键合合金丝。
8.权利要求1所述的银基键合合金丝在集成电路和分立器件的应用。
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