CN111041424B - Film forming apparatus, manufacturing system of organic EL panel, film forming method, and manufacturing method of organic EL element - Google Patents

Film forming apparatus, manufacturing system of organic EL panel, film forming method, and manufacturing method of organic EL element Download PDF

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Publication number
CN111041424B
CN111041424B CN201910975564.XA CN201910975564A CN111041424B CN 111041424 B CN111041424 B CN 111041424B CN 201910975564 A CN201910975564 A CN 201910975564A CN 111041424 B CN111041424 B CN 111041424B
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substrate
vapor deposition
vapor
mask
film forming
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CN111041424A (en
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高津和正
河野贵志
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Environmental & Geological Engineering (AREA)
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Abstract

The present invention relates to a film forming apparatus, a manufacturing system of an organic EL panel, a film forming method, and a manufacturing method of an organic EL element. In the vapor deposition apparatus, if a plurality of vapor deposition stations are provided in one vacuum chamber in order to improve the utilization efficiency and productivity of vapor deposition materials, the volume of the vacuum chamber increases to secure a working space at the time of substrate replacement, and the cost of the apparatus increases. The second mask support part (25) of the second vapor deposition table (32) is lowered to a position lower than that at the time of vapor deposition until vapor deposition is completed on the non-vapor-deposited substrate provided at the film formation position of the first vapor deposition table (28), the vapor-deposited substrate supported by the second substrate support part (24) is replaced with the non-vapor-deposited substrate by using the substrate conveying mechanism (33), and thereafter the second mask support part (25) is raised, the relative positions of the second mask (9) and the non-vapor-deposited substrate are aligned, and the aligned non-vapor-deposited substrate is provided at the film formation position of the second vapor deposition table (32).

Description

Film forming apparatus, manufacturing system of organic EL panel, film forming method, and manufacturing method of organic EL element
Technical Field
The present invention relates to a film forming apparatus and a film forming method. More particularly, the present invention relates to a film forming apparatus and a film forming method capable of performing replacement of a substrate in one vapor deposition station while performing vapor deposition on the substrate in another vapor deposition station in the same chamber.
Background
In recent years, organic EL elements that emit light and have excellent viewing angle, contrast, and response speed are widely used in various display devices typified by wall-mounted televisions.
In general, an organic EL element is manufactured by a method of feeding a substrate into a vacuum chamber and forming an organic film of a predetermined pattern on the substrate. More specifically, the film is produced by a process of feeding a substrate into a film forming chamber maintained under vacuum, a process of aligning (aligning) the substrate with a mask with high accuracy, a process of forming an organic material, a process of feeding a film-formed substrate from the film forming chamber, and the like.
In the process of forming a film on an organic material, the organic material is evaporated or sublimated to form a film, but in the case of heating the organic material every time a substrate is provided, it is necessary to wait until the film forming rate is stable every time the substrate is heated, and the productivity of the production is limited.
Therefore, although a mode in which the deposition source is maintained at a high temperature at all times to keep the film formation rate of the organic material constant is conceivable, evaporation or sublimation of the organic material continues during conveyance and alignment of the substrate, and thus, the waste loss of the organic material increases. Accordingly, attempts have been made to combine an improvement in productivity of production with a reduction in the amount of loss of organic material.
For example, patent document 1 discloses a device including a vacuum chamber capable of accommodating a first substrate and a second substrate, and a vapor deposition source configured to be movable between a vapor deposition region of the first substrate and a vapor deposition region of the second substrate. The vapor deposition source of the device can move between the vapor deposition region of the first substrate and the vapor deposition region of the second substrate along the arc track. The substrate transfer and alignment of one substrate and the vapor deposition of the other substrate can be performed simultaneously, thereby shortening the process time and improving the material utilization efficiency.
Patent document 2 discloses an apparatus in which a first vapor deposition table and a second vapor deposition table are disposed adjacently in a vacuum chamber, and a vapor deposition source reciprocates between the two vapor deposition tables to alternately perform film formation. In this apparatus, for example, when a film is formed on a substrate on one deposition table, a baffle plate is provided on each deposition table so that an organic material does not enter the other deposition table adjacent to the one deposition table. The substrate is transported and aligned by one vapor deposition stage, and the vapor deposition process of the substrate can be performed by the other vapor deposition stage, thereby shortening the process time and improving the material utilization efficiency.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2011-68980
Patent document 2: japanese patent laid-open publication 2016-196684
In the devices described in patent documents 1 and 2, a vapor deposition source is disposed in a bottom portion of a vacuum chamber so as to be horizontally movable, and an organic material is vaporized vertically upward. The vapor deposition stations are provided with a mask holding mechanism and a substrate holding mechanism in this order from below, and are provided with a substrate conveying mechanism and an alignment adjusting mechanism for adjusting the alignment of the two.
For example, when the substrate after film formation is sent out from the film formation chamber, the substrate holding mechanism is lifted up to separate the substrate from the mask, and thereafter the substrate is transported out of the film formation chamber. When the substrate before film formation is set on the vapor deposition table, the substrate fed into the film formation chamber is moved above the vapor deposition table and held by the substrate holding mechanism, and the alignment adjustment is performed while the substrate holding mechanism is moved downward to bring the substrate into proximity with the mask.
In the film forming apparatuses disclosed in patent documents 1 and 2, although the reduction of the process time and the improvement of the material utilization efficiency are achieved, the film forming apparatus tends to be large in size.
The deposition source, the mask, and the substrate are disposed in this order from below in the film formation chamber. When the substrate is replaced, the substrate conveying mechanism operates above the mask fixed at a predetermined height to carry in and carry out the substrate. In this case, in order to prevent the substrate conveying mechanism from interfering with the mask and the mask holding mechanism, a large working space is required above the mask in which the substrate conveying mechanism can operate. Therefore, the height and volume of the film forming chamber (vacuum chamber) become large, the manufacturing cost and transportation cost of the film forming apparatus become large, and the height and ground load of the building in which the film forming apparatus is installed become large. Thereby, the total cost of the manufacturing apparatus of the organic EL element increases.
Disclosure of Invention
The film forming apparatus of the present invention includes a control unit and a vapor deposition source movable to a first vapor deposition stage or a second vapor deposition stage in a film forming chamber capable of reducing pressure, and is characterized in that the first vapor deposition stage includes: the second vapor deposition table includes: a second mask support portion that supports a second mask so as to be movable up and down, and a second substrate support portion that supports a substrate, wherein the control portion performs a first process in which a first substrate replacement and a first setting are performed until vapor deposition of the vapor deposition source on a non-vapor-deposited substrate provided at a film formation position of the first vapor deposition stage is completed, wherein the second mask support portion is lowered to a position lower than that at vapor deposition, and wherein after the first substrate replacement, the second mask support portion is raised in the first setting, and wherein after the first substrate replacement, the non-vapor-deposited substrate subjected to the first substrate replacement is set to a film formation position of the second stage, and wherein after the first process, the vapor deposition source is moved from the first substrate replacement to the second substrate replacement, the second mask support portion is raised in the second setting, and the non-vapor deposition substrate is performed until the vapor deposition is completed, and wherein after the second process is performed, the second substrate is moved from the first substrate replacement to the second substrate replacement, and the non-vapor deposition substrate is performed in the second setting, and a third processing unit configured to set a non-vapor-deposited substrate, which is aligned with the first mask and is subjected to the second substrate replacement, at a film formation position of the first vapor deposition stage, and to move the vapor deposition source from the second vapor deposition stage to the first vapor deposition stage in the fourth processing unit after the third processing.
In addition, the film forming method according to the present invention uses a film forming apparatus including a vapor deposition source movable to a first vapor deposition stage or a second vapor deposition stage in a film forming chamber capable of depressurizing, the first vapor deposition stage including: a first mask support portion capable of supporting the first mask to be movable up and down, and a first substrate support portion capable of supporting the substrate, wherein the second vapor deposition table includes: a film forming method includes: a first step of performing a first substrate replacement and a first setting until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate set at the film formation position of the first vapor deposition stage, wherein the second mask support is lowered to a position lower than that at the time of vapor deposition in the first substrate replacement, the vapor-deposited substrate supported by the second substrate support is replaced with the non-vapor-deposited substrate, and after the first substrate replacement, the second mask support is raised in the first setting, and the non-vapor-deposited substrate subjected to the first substrate replacement aligned with the second mask is set at the film formation position of the second vapor deposition stage; a second step in which the vapor deposition source is moved from the first vapor deposition stage to the second vapor deposition stage; a third step of performing a second substrate replacement and a second setting until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate set at the film formation position of the second vapor deposition stage, wherein the first mask support portion is lowered to a position lower than that at the time of vapor deposition in the second substrate replacement, the vapor-deposited substrate supported by the first substrate support portion is replaced with the non-vapor-deposited substrate, and after the second substrate replacement, the first mask support portion is raised in the second setting, and the non-vapor-deposited substrate aligned with the first mask is set at the film formation position of the first vapor deposition stage; and a fourth step in which the vapor deposition source is moved from the second vapor deposition stage to the first vapor deposition stage.
Effects of the invention
According to the present invention, since the use efficiency of the vapor deposition material and the productivity of film formation are high and the volume of the vacuum chamber is compact, a film forming apparatus and a film forming method can be provided at low cost.
Drawings
Fig. 1 is a schematic plan view of a film forming system according to an embodiment.
Fig. 2 is a schematic cross-sectional view showing the overall structure of the film forming apparatus according to the embodiment.
Fig. 3 is a schematic cross-sectional view showing the overall structure of the film forming apparatus according to the embodiment.
Fig. 4 is a schematic cross-sectional view of an enlarged portion of the mask support and the mask driving member.
Fig. 5 is a timing chart showing operations of each part of the film forming apparatus according to the embodiment.
Fig. 6 is a schematic cross-sectional view showing the vapor deposition table when the substrate is sent out or sent in.
Fig. 7 is a schematic cross-sectional view showing the vapor deposition table when the substrate is fed into and fixed to the substrate support section.
Fig. 8 is a schematic cross-sectional view showing the vapor deposition table when the substrate is placed at the film formation position.
Fig. 9 is a control block diagram of the film forming apparatus according to the embodiment.
Fig. 10 is an explanatory diagram of the organic EL panel manufacturing system of the embodiment.
Description of the reference numerals
1 a vacuum chamber, 2 an evaporation source device,
a 3X-axis sliding mechanism, a 4Y-axis sliding mechanism,
5 a first pressing plate, 6 a first substrate,
7 a first mask, 8 a second substrate,
9 a second mask, 10 a single-dot chain line indicating the height of the mask support portion at the time of film formation,
11 a first mask driving member, 12 a first substrate driving member,
13 a second mask driving member, 14 a second substrate driving member,
15, a synchronous belt, a 16 belt wheel,
17, a driving motor, 18 ball screw,
19 a metal bellows, 20 a first mask support,
21 substrate clamping members, 22 first alignment mechanisms,
23 a first alignment camera, 24 a second substrate support,
25 a second mask support portion, 26 a first substrate support portion,
27 a second pressing plate, 28 a first evaporation table,
29 substrate clamping members, 30 second alignment cameras,
31 a second alignment mechanism, 32 a second evaporation stage,
33 substrate holding hand, 34 gate valve,
35, 36 represents a single-dot chain line indicating the height of the highest portion of the vapor deposition source device 2,
50 a control part, 51 a computer external to the computer,
100. 101, 102 film forming apparatuses, 103,
104, a movable arm, 300 manufacturing system for manufacturing an organic EL panel,
1101. 1102, 1103, 1105 substrate supply chambers,
1106, a mask stock chamber, a 1107 handoff chamber,
1108, a glass feed chamber, a 1109 laminating chamber,
1110 take out of the chamber, 1120 robot.
Detailed Description
A film forming apparatus and a film forming method according to an embodiment of the present invention will be described with reference to the drawings. In the drawings referred to in the following description, the same reference numerals are given to the same components unless otherwise specified.
(film Forming System)
Fig. 1 is a schematic plan view of a film forming system including a film forming apparatus according to an embodiment. In the film forming system of fig. 1, the film forming apparatus 100, the film forming apparatus 101, the film forming apparatus 102, the conveyance chamber 35, and the conveyance path 103 are connected to each other via the gate valve 34, and the inside of the film forming system is maintained at a predetermined vacuum level. The film forming apparatuses 100, 101, and 102 are film forming apparatuses that deposit an organic material on a substrate, and have the same basic configuration. The film forming system may be configured to form the same type of organic material by each film forming apparatus, or may be configured to form different types of organic material by each film forming apparatus. Each of the film forming apparatuses includes two vapor deposition stations, and the structure and operation of the film forming apparatus will be described in detail below with reference to the film forming apparatus 100 as an example.
The transfer chamber 35 includes a transfer robot, and is configured to transfer substrates to and from the film forming apparatuses or the transfer paths 103. The transfer robot includes a movable arm 104 and a substrate holding hand 33, and can transfer substrates to and from the vapor deposition stations of the respective film forming apparatuses. The movable arm 104 and the substrate holding hand 33 may be any type of mechanism as long as they can stably process the substrate in the vacuum apparatus. Fig. 1 schematically illustrates a state in which a gate valve 34 connecting a second vapor deposition stage 32 of the film forming apparatus 100 and a transfer chamber 35 is opened and a transfer robot performs processing on the substrate 8.
The transport path 103 is a transport path for transporting a substrate to a load-lock chamber in which the substrate can be taken out or put in the atmosphere, and for transporting the substrate to another film forming system. In fig. 1, the film forming apparatus and the transport path are arranged in 4 directions, i.e., up, down, left, and right, of the transport chamber 35, but the form of the film forming system is not limited to this example, and the film forming chamber and the transport path may be arranged in 6 directions or 8 directions around the transport chamber as the center. The transfer robot as the substrate transfer mechanism is not limited to a single arm, and may be a multi-arm robot.
(Structure of film Forming apparatus)
Next, a configuration of the film forming apparatus according to the embodiment will be described by taking the film forming apparatus 100 as an example. Fig. 2 and 3 are schematic cross-sectional views showing the overall configuration of the film forming apparatus 100, and each illustrates a different operation state of the film forming apparatus 100.
The film forming apparatus 100 includes a vacuum chamber 1 as an outer enclosure of a film forming chamber, and the inside of the vacuum chamber 1 can be depressurized to, for example, 10 by a vacuum pump not shown -3 A pressure region of Pa or less.
A vapor deposition source device 2 is disposed in the vacuum chamber 1, and an organic material as a film forming material is stored in the vapor deposition source device 2, and the organic material is heated by a heater controlled to evaporate or sublimate at a predetermined rate. The vapor deposition source device 2 is provided with: an opening for discharging the vaporized organic material toward the substrate, and a shutter for shielding the opening as required.
The vapor deposition source device 2 is movable in the X direction and the Y direction by an X-axis slide mechanism 3 and a Y-axis slide mechanism 4. In fig. 2 and 3, the first vapor deposition table 28 is provided on the left side and the second vapor deposition table 32 is provided on the right side, but the vapor deposition source device 2 may be moved to any one of the vapor deposition tables by the X-axis sliding mechanism 3. Fig. 2 shows a state in which the vapor deposition source device 2 is located on the first vapor deposition stage 28 side, and fig. 3 shows a state in which the vapor deposition source device 2 is located on the second vapor deposition stage 32 side.
The vapor deposition source device 2 can perform linear reciprocating scanning in a direction perpendicular to the drawing sheet by the Y-axis sliding mechanism 4, and can form a highly uniform film on the substrate in the Y direction on each vapor deposition stage.
A first mask 7, a first substrate 6, and a first pressing plate 5 serving as a magnet plate are disposed in this order from below on the first vapor deposition stage 28 side in the vacuum chamber 1. The first mask 7 is supported from both sides by a pair of first mask supporting portions 20. The first substrate 6 is supported from both sides by a pair of first substrate supporting portions 26 when aligned with the first mask 7, and the substrate clamping member 21 can fix the first substrate 6 to the first substrate supporting portions 26.
A first mask driving member 11, a first substrate driving member 12, a first alignment mechanism 22, and a first alignment camera 23 are provided on the first vapor deposition stage 28 side of the vacuum chamber 1. The first mask driving member 11 can adjust the position of the first mask support portion 20 in the vertical direction in the vacuum chamber 1. The first substrate driving member 12 can adjust the position of the first substrate support portion 26 in the vertical direction in the vacuum chamber 1. The first alignment camera 23 may photograph alignment marks of the first substrate 6 and the first mask 7. The first alignment mechanism 22 can move the first substrate support portion 26 in the X-axis direction, in the Y-axis direction, and in the θ direction.
The same structure as the first vapor deposition stage 28 may be provided on the second vapor deposition stage 32 side. That is, the second mask 9, the second substrate 8, and the second pressing plate 27 serving also as a magnet plate are disposed in this order from below on the second vapor deposition stage 32 side in the vacuum chamber 1. The second mask 9 is supported from both sides by a pair of second mask supporting portions 25. The second substrate 8 is supported from both sides by a pair of second substrate supporting portions 24 when aligned with the second mask 9, and the substrate clamping members 29 can fix the second substrate 8 to the second substrate supporting portions 24.
A second mask driving member 13, a second substrate driving member 14, a second alignment mechanism 31, and a second alignment camera 30 are provided on the second vapor deposition stage 32 side of the vacuum chamber 1. The second mask driving member 13 can adjust the position of the second mask supporting portion 25 in the vertical direction in the vacuum chamber 1. The second substrate driving member 14 can adjust the position of the second substrate support portion 24 in the vertical direction in the vacuum chamber 1. The second alignment camera 30 may photograph alignment marks of the second substrate 8 and the second mask 9. The second alignment mechanism 31 can move the second substrate support portion 24 in the X-axis direction, in the Y-axis direction, and in the θ direction.
Next, specific configurations of the mask driving member and the substrate driving member provided in each vapor deposition stage will be described in more detail. The mask driving member and the substrate driving member are mechanisms capable of moving up and down the mask support portion and the substrate support portion in the vacuum chamber 1, respectively, and basic operation principles are the same. Therefore, the first mask driving member 11 will be described as an example.
Fig. 4 is a schematic cross-sectional view of the first mask support portion 20 and a part of the first mask driving member 11 enlarged, and as shown in the figure, the shaft of the first mask support portion 20 is vertically movably communicated with the atmosphere side in a state where airtightness is ensured via the metal bellows 19. The first mask supporting portion 20 is movable up and down by converting rotation of the driving motor 17 transmitted via the pulley 16 and the timing belt 15 into linear motion using the ball screw 18. In the first vapor deposition stage 28, the pair of first mask support portions 20 that can support the masks are controlled in 2-axis synchronization, so that the first mask 7 can be lifted and lowered while maintaining its posture.
Similarly, the shaft of the first substrate support section 26 communicates with the atmosphere in a state where air tightness is ensured via a metal bellows, and the rotation of the drive motor transmitted via the pulley and the timing belt is converted into linear motion by the ball screw, so that the shaft can move up and down. In the first vapor deposition table 28, the pair of first substrate support portions 26 capable of supporting the substrates are controlled in synchronization with each other on the 2 axis, whereby the first substrate 6 can be lifted and lowered while maintaining its posture.
The second mask driving member 13 and the second substrate driving member 14 on the second vapor deposition stage 32 side also have the same mechanism.
(action of film Forming apparatus)
Next, the operation of the film forming apparatus according to the embodiment will be described by taking the film forming apparatus 100 as an example. In the film forming apparatus according to the embodiment, while vapor deposition is performed by one vapor deposition stage, the mask is moved downward by the other vapor deposition stage, and the substrate is replaced after a space for processing the substrate is formed.
Fig. 5 is a timing chart showing transition of each operation state of the first vapor deposition station, the second vapor deposition station, and the vapor deposition source device for one cycle of the operation of the film forming apparatus 100.
First, in the period T1, the control unit controls each part to execute the first process, and the following first process is performed. That is, the first substrate 6 is vapor-deposited on the first vapor deposition stage 28 side of the film forming apparatus 100. The vapor deposition source device 2 moves toward the first vapor deposition stage 28 in advance before the period T1, and when vapor deposition is started by opening the shutter, vapor deposition with high uniformity is performed over the entire vapor deposition region of the substrate 6 while reciprocating scanning in the Y direction by the Y-axis sliding mechanism 4. After vapor deposition of a predetermined film thickness, the shutter is closed to terminate vapor deposition.
On the other hand, in the period T1, the second vapor deposition stage 32 feeds the vapor-deposited substrate, feeds the next vapor-deposited substrate, aligns the next vapor-deposited substrate with the relative position of the second mask 9, and sets the aligned substrate and mask at the film formation position. Fig. 2 shows the arrangement of the respective parts of the film forming apparatus 100 in the period T1.
Next, in the period T2, the control unit controls each part to execute the second process, and the following second process is performed. That is, the vapor deposition source device 2 in the state where the shutter is closed is moved from the first vapor deposition stage 28 side to the second vapor deposition stage 32 side by the X-axis sliding mechanism 3.
Next, in the period T3, the control unit controls each part to execute the third process, and the following third process is performed. That is, the second substrate 8, which is fed to the second vapor deposition stage 32 and set at the film formation position during the period T1, is vapor deposited. When vapor deposition is started by opening the shutter, the vapor deposition source device 2 performs vapor deposition with high uniformity over the entire vapor deposition area of the second substrate 8 while scanning reciprocally in the Y direction by the Y-axis slide mechanism 4. After vapor deposition of a predetermined film thickness, the shutter is closed to terminate vapor deposition.
On the other hand, in the period T3, the substrate on which vapor deposition has been completed in the period T1 is sent out from the first vapor deposition stage 28, the substrate on which vapor deposition has been performed next is sent in and aligned with the relative position of the first mask 7, and the aligned substrate and mask are set at the film formation position. Fig. 3 shows the arrangement of the respective parts of the film forming apparatus 100 in the period T3.
Next, in the period T4, the control unit controls each part to execute the fourth process, and the following fourth process is performed. That is, the vapor deposition source device 2 in the state where the shutter is closed is moved from the second vapor deposition stage 32 side to the first vapor deposition stage 28 side by the X-axis sliding mechanism 3.
The film forming apparatus 100 can perform vapor deposition on a plurality of substrates with high productivity by repeatedly and continuously performing the operations described above from the period T1 to the period T4, thereby improving the utilization efficiency of the vapor deposition material.
Next, a step of feeding the vapor-deposited substrate from the vapor deposition table to the vapor deposition table and feeding the non-vapor-deposited substrate deposited next to the vapor deposition table to the film formation position will be described in detail.
Here, the operation of the first vapor deposition stage 28 side in the period T3 will be described with reference to fig. 3 and fig. 6 to 8, but the procedure of the operation of the second vapor deposition stage 32 side in the period T1 is also the same. In each figure, the single-dot chain line 10 shows the height of the mask support portion at the time of film formation, and the single-dot chain line 36 shows the height of the highest portion of the vapor deposition source device 2.
At the start time of the period T3, the substrate on which vapor deposition is completed in the period T1 is held in a state of being set at the film formation position in the first vapor deposition stage 28. That is, as shown in fig. 8, the first mask support portion 20 is positioned at a height at the time of film formation, that is, at the level of the one-dot chain line 10, and supports the vapor deposited substrate and the first mask 7. The first pressing plate 5 serving as a magnet plate is closely attached to the upper surface of the vapor-deposited substrate, and the first mask 7 is attached to the lower surface of the substrate. The vapor-deposited substrate is supported by the first mask support portion 20 at this stage, and is separated from the first substrate support portion 26, and the substrate clamp 21 is opened.
The following operations are performed in order to feed the vapor-deposited substrate from the first vapor deposition table 28 using the substrate holding hand 33 of the transfer robot.
First, the first pressing plate 5 is lifted up to be separated from the upper surface of the deposited substrate, and the first mask 7 is released from the attraction by the magnet. Next, the first substrate driving member 12 is driven to raise the first substrate supporting portion 26, and the first substrate supporting portion is moved to a position slightly higher (for example, 10 mm) than the one-dot chain line 10 in a state where the vapor deposited substrate is supported. The first mask driving means 11 is driven to lower the first mask supporting portion 20, and the first mask supporting portion 20 is moved to a position lower than the one-dot chain line 36 in a state where the first mask 7 is supported. Since the vapor deposition source device 2 moves to the second vapor deposition table 32 during the period T2, the first mask support portion 20 does not interfere with the vapor deposition source device 2 even when it is lowered to a position lower than the one-dot chain line 36. In some cases, the vapor deposition source device 2 may be provided with a position sensor, and the vapor deposition source device 2 may be checked to move toward the second vapor deposition table 32 before the first mask support portion 20 is lowered.
In the present embodiment, the mask support portion is lowered to a height lower than the height of the highest portion of the vapor deposition source device, so that an operation space for the transfer robot can be formed between the substrate support portion and the mask. In order to transfer substrates between the substrate support section and the transfer robot, a wide working space for operating the transfer robot is required between the substrate support section and the mask. In the conventional film forming apparatus, since the mask is fixed at the same height as that at the time of vapor deposition when the substrate is conveyed, a wide space needs to be ensured between the one-dot chain line 10 and the top of the vacuum chamber in order to ensure the operation space of the conveying robot. Further, the substrate support portion is moved to a large extent (for example, 150 mm) in the top direction of the vacuum chamber to secure an operation space of the transfer robot, but since the height of the vacuum chamber is large, the apparatus is large in size, and the total cost of the manufacturing equipment is large.
In the present embodiment, when the substrate is fed out, by lowering the mask support portion, the substrate support portion is moved to a position slightly higher than the one-dot chain line 10, and thus an operation space for the transfer robot can be formed between the substrate support portion and the mask. Therefore, in the present embodiment, since it is not necessary to secure a wide space between the one-dot chain line 10 and the top of the vacuum chamber, the chamber height HC of the vacuum chamber can be reduced, and the size and weight of the film forming apparatus can be reduced, as shown in fig. 2 and 3. That is, the total cost of the manufacturing apparatus can be suppressed.
When the vapor-deposited substrate is to be sent out, as shown in fig. 3 and 6, the vapor-deposited substrate 6 is held by a substrate holding hand 33 of a transfer robot, and is sent out to a transfer chamber 35 through a gate valve 34.
When the delivery of the vapor-deposited substrate is completed, the non-vapor-deposited substrate, which is the target of the next vapor deposition, is delivered to the first vapor deposition stage 28 by using the transfer robot. The height of each portion is the same as that when the evaporated substrate is sent out. Therefore, the substrate 6 illustrated in fig. 6 can be said to be a substrate that has been vapor deposited at the time of delivery and a substrate that has not been vapor deposited at the time of delivery. When the non-vapor deposited substrate is placed on the first substrate support portion 26, the substrate holding hand 33 of the transfer robot is retracted into the transfer chamber 35, and the gate valve 34 is closed.
Thereafter, as shown in fig. 7, the first substrate 6 placed on the first substrate support portion 26 without vapor deposition is fixed by the substrate clamp 21.
Next, the first mask driving means 11 is driven to raise the first mask supporting portion 20, and the first mask supporting portion is stopped at the position of the one-dot chain line 10, which is the height at the time of vapor deposition. The first substrate support portion 26 is located at a position higher than the one-dot chain line 10, but the first substrate support portion 26 is lowered by driving the first substrate driving member 12 so that the first substrate approaches the first mask 7 to a position where the alignment marks of the first substrate 6 and the first mask 7 can be simultaneously photographed by the first alignment camera 23. Then, in order to align the first substrate 6 with the first mask 7, the alignment marks of the first substrate 6 and the first mask 7 are photographed by the first alignment camera 23, and the control unit calculates an alignment correction amount based on the photographed data.
Next, the first substrate is temporarily driven by the first substrate driving member 12 to raise the first substrate supporting portion 26. Next, the control unit drives the first alignment mechanism 22 capable of X-axis movement, Y-axis movement, and θ rotation based on the calculation result, and moves the first substrate 6 to the alignment target position.
After the first substrate 6 is moved to the alignment target position, the first substrate 6 is driven again by the first substrate driving means 12 to lower the first substrate supporting portion 26, and the first substrate is stopped at the position of the one-dot chain line 10, which is the height at the time of vapor deposition. Next, when the first pressing plate 5 serving as a magnet plate located above is lowered, the first mask 7 serving as a magnetic material is attracted by the magnetic force of the magnet and brought into close contact with the lower surface of the first substrate 6. After the first substrate 6 and the first mask 7 are brought into close contact with each other, the substrate clamp 21 is brought into a released state.
Next, the first substrate 6 is mounted on the first mask support 20 in a state of being in close contact with the first mask 7 by slightly lowering the first substrate support 26. That is, the film is set at the film formation position shown in fig. 8.
The operation up to this point is completed in a period T3 shown in fig. 5, that is, in a period from the end of film formation on the substrate on the second vapor deposition stage 32 side.
(control System)
Next, a configuration of a control system of the film forming apparatus 100 according to the embodiment will be described with reference to a control block diagram of fig. 9. The control system of the film forming apparatus 100 may be a part of a control system that controls the entire film forming system shown in fig. 1. For convenience of illustration, only some of the elements connected to the control unit are shown in fig. 9.
The control unit 50 is a computer for controlling the operation of the film forming apparatus 100, and includes a CPU, ROM, RAM, I/O port or the like therein. The ROM stores an operation program related to basic operations of the film forming apparatus 100.
The program for executing various processes related to the film formation method of the present embodiment may be stored in the ROM as in the basic operation program, or may be loaded from the outside into the RAM via the network. Alternatively, the program may be loaded into the RAM via a recording medium readable by a computer having the program recorded thereon.
The I/O port is connected to an external device or a network, and can input and output data necessary for vapor deposition, for example, to and from the external computer 51. The I/O port is connected to a monitor or an input device, not shown, and can display operation state information of the film forming apparatus to an operator or receive command input from the operator.
The control unit 50 is connected to the first mask driving member 11, the first substrate driving member 12, the first alignment mechanism 22, and the substrate holder 21, and controls the operations of the respective portions of the first vapor deposition table 28. The control unit 50 is connected to the second mask driving member 13, the second substrate driving member 14, the second alignment mechanism 31, and the substrate chuck 29, and controls the operations of the respective portions of the second vapor deposition table 32.
The control unit 50 is connected to the X-axis slide mechanism 3 and the Y-axis slide mechanism 4, and controls the position of the vapor deposition source device 2. The control unit 50 is connected to the vapor deposition source device 2, and controls the operation of the heater and the shutter of the vapor deposition source device 2.
The control unit 50 is connected to the first alignment camera 23, the second alignment camera 30, a position sensor of the vapor deposition source device, a position sensor of the mask support unit, and other sensors, and obtains information necessary for controlling the respective units.
The control unit 50 is connected to a control unit of the transfer robot and a control unit of the gate valve 34, and performs synchronization adjustment of operation timing in cooperation with the control unit and the gate valve when the substrate is fed and fed. The control unit 50 may directly control the operation of the transfer robot and the gate valve 34 according to circumstances.
The control unit 50 controls the operations of the above-described portions, and thereby performs the processing related to the entire film forming process including the feeding of the substrate, the vapor deposition, and the feeding of the substrate at each vapor deposition station.
As described above, in the film forming apparatus and the film forming method according to the present embodiment, if vapor deposition is completed on one vapor deposition stage, the vapor deposition source device is moved to the other vapor deposition stage, and vapor deposition is started. Further, in the period until the vapor deposition on the other vapor deposition stage is completed, the mask support portion is moved downward on the one vapor deposition stage to carry out the delivery of the vapor deposited substrate and the delivery of the non-vapor deposited substrate, and alignment with the mask is completed and the mask support portion is set at the film formation position. Then, if the vapor deposition is completed on the other vapor deposition stage, the vapor deposition source device is moved to the one vapor deposition stage, and vapor deposition is started. Next, during a period until the vapor deposition on one vapor deposition stage is completed, the mask support portion is moved downward on the other vapor deposition stage to carry out the delivery of the vapor deposited substrate and the delivery of the non-vapor deposited substrate, and thereafter, the mask is raised to the alignment position, and the alignment of the mask and the substrate is completed and set at the film formation position. By repeating the above operations, new substrates alternately fed into the same vacuum chamber can be continuously vapor-deposited on the two vapor deposition stations. That is, by simultaneously performing film formation and substrate replacement in parallel in the same vacuum chamber, the efficiency of use of the vapor deposition material can be improved in manufacturing the organic EL element, and the productivity of film formation can be increased.
In the present embodiment, since the mask support portion is lowered to a position lower than the vapor deposition position and the alignment position when the substrate is fed or carried in, the movement space of the transfer robot can be formed between the substrate support portion and the mask by moving the substrate support portion to a position slightly higher than the film formation position. In the present embodiment, since it is not necessary to secure a wide space between the film formation position and the top of the vacuum chamber, the height of the vacuum chamber can be reduced, and the size and weight of the film formation apparatus can be reduced. Therefore, the total cost of the manufacturing apparatus of the organic EL element can be suppressed.
Other embodiments
The present invention is not limited to the above-described embodiments, and various modifications can be made within the technical spirit of the present invention.
For example, when the substrate is replaced, the mask support portion is preferably lowered to a height lower than the height of the highest portion of the vapor deposition source device, but the position may be reached in a case where the operation space of the transfer robot can be ensured by lowering to a position higher than the highest portion of the vapor deposition source device. In other words, by lowering the mask support portion when the substrate is replaced, an operation space for the transfer robot can be formed between the substrate support portion and the mask, and the height of the vacuum chamber can be suppressed.
The present invention can be implemented in a system in which one film forming apparatus includes a plurality of vapor deposition stations, and for example, one film forming apparatus may include 3 or more vapor deposition stations.
Fig. 10 is an explanatory diagram of a manufacturing system 300 for manufacturing an organic EL panel, which implements the present invention. The manufacturing system 300 includes a plurality of film forming apparatuses 100, a transfer chamber 1101, a transfer chamber 1102, a transfer chamber 1103, a substrate supply chamber 1105, a mask stock chamber 1106, a transfer chamber 1107, a glass supply chamber 1108, a bonding chamber 1109, a take-out chamber 1110, and the like. Although each film forming apparatus 100 has a small difference in film forming material, mask, and the like, the basic structure (particularly, the structure related to conveyance and alignment of the substrate) is substantially the same. As described above, each film forming apparatus 100 moves the mask support portion to a position lower than the vapor deposition position and the alignment position on the other vapor deposition table until vapor deposition on one vapor deposition table is completed, and then performs the delivery of the vapor deposited substrate and the delivery of the non-vapor deposited substrate, and thereafter, lifts the mask, thereby completing the alignment between the substrate and the mask, and setting the mask at the film formation position.
A robot 1120 as a transport mechanism is disposed in the transport chambers 1101, 1102, 1103. The robot 1120 conveys the substrates between the chambers. The plurality of film forming apparatuses 100 included in the manufacturing system 300 may be apparatuses that form films of the same material, or apparatuses that form films of different materials. For example, a system for manufacturing organic materials having different emission colors by vapor deposition in each film forming apparatus may be used. In the manufacturing system 300, an organic material is deposited on a substrate conveyed by the robot 1120, or a thin film of an inorganic material such as a metal material is formed by, for example, deposition.
The substrate is supplied from the outside to the substrate supply chamber 1105. The masks used in the respective film forming apparatuses 100 and deposited with the films are transferred to the mask stock chamber 1106 by the robot 1120. The mask may be cleaned by retrieving the mask transferred to the mask stock chamber 1106. The cleaned mask may be stored in the mask storage chamber 1106 and set up in the film forming apparatus 100 by the robot 1120.
The glass material for sealing is supplied from the outside to the glass supply chamber 1108. In the bonding chamber 1109, a glass material for sealing is bonded to a substrate after film formation to manufacture an organic EL panel. The manufactured organic EL panel is taken out from the take-out chamber 1110.
As described above, the present invention can be suitably carried out when forming an organic film constituting an organic EL element, but can be used for other film forming.

Claims (9)

1. A film forming apparatus comprising a control unit and a vapor deposition source movable to a first vapor deposition stage or a second vapor deposition stage in a film forming chamber capable of reducing pressure,
the first vapor deposition table includes: a first mask support part capable of supporting the first mask to move up and down, and a first substrate support part capable of supporting the substrate,
the second vapor deposition table includes: a second mask supporting portion capable of supporting the second mask to be movable up and down, and a second substrate supporting portion capable of supporting the substrate,
the control section performs a first process, a second process, a third process, and a fourth process,
in the first process, a first substrate replacement and a first setting are performed until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate placed at the film formation position of the first vapor deposition table, the second mask support portion is lowered to a height lower than that at the vapor deposition time and lower than that at the highest position of the vapor deposition source in the first substrate replacement, the vapor-deposited substrate supported by the second substrate support portion is replaced with the non-vapor-deposited substrate, the second mask support portion is raised in the first setting after the first substrate replacement, the non-vapor-deposited substrate aligned with the second mask and subjected to the first substrate replacement is set at the film formation position of the second vapor deposition table,
after the first process, in the second process, the vapor deposition source is moved from the first vapor deposition stage to the second vapor deposition stage,
after the second process, in the third process, a second substrate replacement and a second setting are performed until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate set at the film formation position of the second vapor deposition table, wherein in the second substrate replacement, the first mask support is lowered to a height lower than that of the highest position of the vapor deposition source during vapor deposition, the vapor-deposited substrate supported by the first substrate support is replaced with the non-vapor-deposited substrate, and in the second setting, the first mask support is raised, and the non-vapor-deposited substrate aligned with the first mask is set at the film formation position of the first vapor deposition table,
after the third process, in the fourth process, the vapor deposition source is moved from the second vapor deposition stage to the first vapor deposition stage.
2. The film forming apparatus according to claim 1, wherein,
in the first process, the control unit sends the vapor-deposited substrate supported by the second substrate support unit out of the film forming chamber by using a substrate conveying mechanism, sends the non-vapor-deposited substrate into the film forming chamber by using the substrate conveying mechanism, and supports the non-vapor-deposited substrate on the second substrate support unit,
in the third process, the control unit sends the vapor-deposited substrate supported by the first substrate support unit out of the film forming chamber using the substrate transport mechanism, and then sends the vapor-non-deposited substrate into the film forming chamber using the substrate transport mechanism, thereby supporting the vapor-non-deposited substrate on the first substrate support unit.
3. The film forming apparatus according to claim 1 or 2, wherein,
the control unit repeatedly executes the first to fourth processes.
4. A manufacturing system, characterized in that,
a film forming apparatus according to any one of claims 1 to 3.
5. A system for manufacturing an organic EL panel, characterized in that,
a film forming apparatus according to any one of claims 1 to 3, wherein the vapor deposition source of at least one of the film forming apparatuses is a vapor deposition source of an organic material.
6. A film forming method using a film forming apparatus having a vapor deposition source movable to a first vapor deposition stage or a second vapor deposition stage in a film forming chamber capable of reducing pressure,
the first vapor deposition table includes: a first mask support portion capable of supporting the first mask to be movable up and down, and a first substrate support portion capable of supporting the substrate, wherein the second vapor deposition table includes: a second mask supporting portion capable of supporting the second mask to be movable up and down, and a second substrate supporting portion capable of supporting the substrate,
the film forming method is characterized by comprising the following steps:
a first step of performing a first substrate replacement and a first setting until the vapor deposition of the vapor deposition source is completed on the non-vapor-deposited substrate placed at the film formation position of the first vapor deposition table, wherein the second mask support portion is lowered to a height lower than the vapor deposition source and lower than the highest position of the vapor deposition source in the first substrate replacement, the vapor-deposited substrate supported by the second substrate support portion is replaced with the non-vapor-deposited substrate, and the second mask support portion is raised in the first setting after the first substrate replacement, and the non-vapor-deposited substrate aligned with the second mask and subjected to the first substrate replacement is set at the film formation position of the second vapor deposition table;
a second step in which the vapor deposition source is moved from the first vapor deposition stage to the second vapor deposition stage;
a third step of performing a second substrate replacement and a second setting until the vapor deposition of the non-vapor-deposited substrate placed at the film formation position of the second vapor deposition table by the vapor deposition source is completed, wherein the first mask support portion is lowered to a height lower than the height of the highest portion of the vapor deposition source during the second substrate replacement, the vapor-deposited substrate supported by the first substrate support portion is replaced with the non-vapor-deposited substrate, and the first mask support portion is raised during the second setting after the second substrate replacement, and the non-vapor-deposited substrate aligned with the first mask is set at the film formation position of the first vapor deposition table; and
and a fourth step in which the vapor deposition source is moved from the second vapor deposition stage to the first vapor deposition stage.
7. The method according to claim 6, wherein,
in the first step, after the substrate transport mechanism feeds the vapor-deposited substrate supported by the second substrate support portion from the film formation chamber, the substrate transport mechanism feeds the non-vapor-deposited substrate into the film formation chamber to support the non-vapor-deposited substrate on the second substrate support portion,
in the third step, after the substrate transport mechanism feeds the vapor-deposited substrate supported by the first substrate support portion from the film formation chamber, the substrate transport mechanism feeds the non-vapor-deposited substrate into the film formation chamber to support the non-vapor-deposited substrate on the first substrate support portion.
8. The method for forming a film according to claim 6 or 7,
repeating the first to fourth steps.
9. A method for manufacturing an organic EL element, characterized in that,
an organic film of an organic EL element formed by the film forming method according to any one of claims 6 to 8.
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