CN111029256B - Method for patterning aluminum nitride and silicon carbide composite structure and composite structure - Google Patents
Method for patterning aluminum nitride and silicon carbide composite structure and composite structure Download PDFInfo
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- CN111029256B CN111029256B CN201911164821.8A CN201911164821A CN111029256B CN 111029256 B CN111029256 B CN 111029256B CN 201911164821 A CN201911164821 A CN 201911164821A CN 111029256 B CN111029256 B CN 111029256B
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 169
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 157
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 144
- 239000002131 composite material Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000000059 patterning Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 82
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 12
- 239000011737 fluorine Substances 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 33
- 239000000460 chlorine Substances 0.000 claims description 20
- 238000001020 plasma etching Methods 0.000 claims description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 13
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Abstract
The application provides a patterning method of an aluminum nitride and silicon carbide composite structure and the composite structure. Patterning through the aluminum nitride and silicon carbide composite structureAccording to the method, when the silicon carbide structure and the aluminum nitride structure are prepared, cl-based etching gas is adopted for AlN (an aluminum nitride thin film layer), so that the lateral corrosion of AlN is small, the piezoelectric property of AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process. Simultaneously, siO formed by the silicon dioxide film layer and the second mask layer (photoresist mask layer) 2 The photoresist composite mask layer can protect an AlN pattern while rapidly etching SiC (silicon carbide substrate), thereby improving the pattern quality. And by adopting fluorine-based gas etching on SiC, the etching rate of SiC is effectively improved while AlN is protected, and the processing efficiency of the device is improved.
Description
Technical Field
The application relates to the field of sensor manufacturing, in particular to a patterning method of an aluminum nitride and silicon carbide composite structure and the aluminum nitride and silicon carbide composite structure.
Background
The aluminum nitride (AlN) and silicon carbide (SiC) composite structure has wide application or potential application prospect in microelectronic technology, microsystem technology and sensor technology. In the process of manufacturing a high-temperature piezoelectric sensor based on an AlN and SiC composite structure, the AlN and SiC composite structure need to be patterned separately. The copying precision and the pattern quality of AlN thin film pattern transfer have important influence on the performance of a device, the property of AlN needs to be protected from being damaged preferentially in the AlN patterning process, and an etching mode for avoiding AlN undercut needs to be selected. After AlN is etched, the SiC substrate is very difficult to etch deeply, and the AlN graph needs to be protected, and meanwhile, the etching speed needs to be higher, the processing efficiency needs to be improved, and the cost needs to be saved. Therefore, the AlN and SiC composite structure is very difficult to etch, and a high-precision pattern with a complex structure is not easy to manufacture.
In the traditional AlN and SiC composite structure patterning method, the etching process of an AlN material in a chemical corrosive liquid of the AlN material is difficult to control, the transferred pattern quality is poor, and the etching rate and the pattern quality are seriously dependent on the crystallization quality of an AlN thin film, so that the AlN and SiC composite structure is difficult to prepare.
Disclosure of Invention
Therefore, it is necessary to provide a patterning method for an AlN and SiC composite structure, which can protect an AlN pattern and ensure a fast etching rate, and has high processing efficiency and cost saving, in view of the problem that the conventional patterning method for an AlN and SiC composite structure is difficult to prepare.
The application provides a graphical method of an aluminum nitride and silicon carbide composite structure, which comprises the following steps:
s10, providing a silicon carbide substrate, and preparing an aluminum nitride thin film layer on the surface of the silicon carbide substrate;
s20, preparing a first mask layer on the surface of the aluminum nitride thin film layer far away from the silicon carbide substrate according to the aluminum nitride mask pattern;
s30, placing the silicon carbide substrate with the first mask layer in a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure;
and S40, removing the first mask layer.
In one embodiment, the method for patterning an aluminum nitride and silicon carbide composite structure further comprises:
s50, preparing a silicon dioxide film layer on the surface of the aluminum nitride structure and the surface of the silicon carbide substrate;
s60, preparing a second mask layer on the surface of the silicon dioxide film layer far away from the silicon carbide substrate according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate with the second mask layer into a corrosive liquid for corrosion, and exposing an etching window of the silicon carbide substrate;
s80, placing the silicon carbide substrate with the etching window into a plasma etching vacuum chamber, and etching the silicon carbide substrate by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure;
s90, removing the second mask layer and the silicon dioxide film layer, wherein the aluminum nitride structure and the silicon carbide structure form an aluminum nitride and silicon carbide composite structure.
In one embodiment, in the S30, the chlorine-based mixingThe resultant gas plasma is BCl 3 、Cl 2 And plasma generated from the mixed gas of Ar.
In one embodiment, in the S30, the air pressure is set to be 0.3Pa to 0.5Pa 3 The flow rate is 14sccm to 16sccm and Cl 2 And the flow rate is 34-36 sccm, the silicon carbide substrate with the first mask layer is placed in a plasma etching vacuum cavity, and the aluminum nitride thin film layer is etched.
In one embodiment, the step S50 is performed by a plasma enhanced chemical vapor deposition method, wherein the temperature is set to be 280-320 ℃, the time is set to be 380-400S, the pressure is set to be 1600-1800 torr, and SiH is set 4 And N 2 And the flow rate ratio of O is 1:1, and the silicon dioxide film layer is prepared on the surface of the aluminum nitride structure and the surface of the silicon carbide substrate.
In one embodiment, the silicon dioxide thin film layer covers the surface of the aluminum nitride structure and the surface of the silicon carbide substrate, and the thickness of the silicon dioxide thin film layer is larger than that of the aluminum nitride structure.
In one embodiment, in the S80, the fluorine-based mixed gas plasma is SF 6 、O 2 And plasma generated from the mixed gas of Ar.
In one embodiment, in the S80, the air pressure is set to be 0.4Pa to 0.6Pa 6 The flow rate is 49sccm to 51sccm and O 2 And the flow rate is 9-11 sccm, the silicon carbide substrate with the etching window is placed into a plasma etching vacuum cavity, and the silicon carbide substrate is etched through the etching window.
In one embodiment, in the step S10, a magnetron sputtering method is adopted, a radio frequency power is set to 190W to 210W, a sputtering pressure is set to 4mT to 5mT, a flow ratio of nitrogen to argon is 3:2, and a growth time is set to 1.9h to 2.1h, so that the aluminum nitride thin film layer is prepared on the surface of the silicon carbide substrate.
In one embodiment, the second mask layer is a photoresist mask layer.
In one embodiment, an aluminum nitride and silicon carbide composite structure is prepared using the method of patterning an aluminum nitride and silicon carbide composite structure as described in any of the above embodiments.
The application provides a patterning method of the aluminum nitride and silicon carbide composite structure. In the step S10, the aluminum nitride thin film layer (AlN film) prepared on the surface of the silicon carbide substrate is an AlN film having a good c-axis (002) orientation, and has a good piezoelectric property. In S20, the first mask layer is prepared according to the aluminum nitride mask pattern, and a portion of the surface of the aluminum nitride thin film layer where the mask layer is not disposed is etched through the first mask layer to protect the portion where the first mask layer is disposed.
In S30, the aluminum nitride film (AlN film) is slowly etched by an Inductively Coupled Plasma etching method (ICPE for short) using the combined actions of physical bombardment and chemical reaction to obtain a structure with a neat and smooth edge and a good verticality. And the aluminum nitride film layer is etched by adopting the chlorine-based mixed gas plasma, so that the lateral corrosion of the aluminum nitride film layer is small, the influence on the piezoelectric layer performance of the AlN film layer is small, and the piezoelectric performance of the AlN film is effectively maintained. Therefore, the piezoelectric performance is not damaged in the patterning process of the method for patterning the aluminum nitride and silicon carbide composite structure, and the aluminum nitride and silicon carbide composite structure with high patterning quality can be obtained. Therefore, by the method for patterning the aluminum nitride and silicon carbide composite structure, the aluminum nitride film layer is subjected to small lateral corrosion, the silicon carbide Substrate (SiC) can be quickly etched under the condition of protecting the AlN film piezoelectric layer, the processing efficiency is high, and the problems that the etching process of an AlN material in a chemical etching solution of the AlN material is difficult to control and the transferred pattern quality is poor in the traditional method are solved.
Drawings
FIG. 1 is a schematic flow diagram of a method for patterning a composite structure of aluminum nitride and silicon carbide provided herein;
FIG. 2 is a flow chart of a process for fabricating an aluminum nitride structure according to the present application;
FIG. 3 is an SEM image of an aluminum nitride (AlN) film grown on a silicon carbide Substrate (SiC) provided herein;
FIG. 4 is an XRD pattern of an aluminum nitride thin film layer (AlN) grown on a silicon carbide Substrate (SiC) as provided herein;
FIG. 5 is an SEM image of a chlorine-based gas etching aluminum nitride thin film layer to prepare an aluminum nitride structure provided by the present application;
FIG. 6 is a flow chart of a process for preparing an aluminum nitride and silicon carbide composite structure provided herein;
FIG. 7 is an SEM image of a fluorine-based gas etching of a silicon carbide Substrate (SiC) to produce a silicon carbide structure as provided herein.
Description of the reference numerals
The silicon nitride/silicon carbide composite structure comprises an aluminum nitride/silicon carbide composite structure 100, a silicon carbide substrate 10, an etching window 110, an aluminum nitride thin film layer 20, an aluminum nitride structure 210, a first mask layer 30, a silicon dioxide thin film layer 40, a second mask layer 50 and SiO 2 The photoresist composite mask layer 200.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below by way of embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The ordinal numbers used herein for the components, such as "first," "second," etc., are used merely to distinguish between the objects described, and do not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like are used in the orientations and positional relationships indicated in the drawings, which are based on the orientations and positional relationships indicated in the drawings, and are used for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application.
In this application, unless expressly stated or limited otherwise, a first feature is "on" or "under" a second feature such that the first and second features are in direct contact, or the first and second features are in indirect contact via an intermediary. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1-2, the present application provides a method for patterning a composite structure of aluminum nitride and silicon carbide, comprising:
s10, providing a silicon carbide substrate 10, and preparing an aluminum nitride thin film layer 20 on the surface of the silicon carbide substrate 10;
s20, preparing a first mask layer 30 on the surface, far away from the silicon carbide substrate 10, of the aluminum nitride thin film layer 20 according to an aluminum nitride mask pattern;
s30, placing the silicon carbide substrate 10 with the first mask layer 30 in a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer 20 by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure 210;
s40, removing the first mask layer 30.
In the S10, the aluminum nitride thin film layer 20 (AlN film) prepared on the surface of the silicon carbide substrate 10 is a 0.1 μm to 2.5 μm mal n thin film having a good c-axis (002) orientation (see fig. 3 to 4), and has a good piezoelectric property. In S20, the first mask layer 30 is prepared according to the aluminum nitride mask pattern. The aluminum nitride mask pattern is the same pattern as the aluminum nitride film structure to be formed (i.e., the same pattern as the aluminum nitride structure 210). And etching the part, which is not provided with the mask layer, on the surface of the aluminum nitride thin film layer 20 through the first mask layer 30, and protecting the part provided with the first mask layer 30. The first mask layer 30 is a photoresist that is difficult to be etched in chlorine-based plasma etching, so that sufficient protection can be performed during etching.
In S30, the aluminum nitride film layer 20 (AlN film) is slowly etched by using a comprehensive effect of physical bombardment and chemical reaction through an Inductively Coupled Plasma Etch (ICPE for short) to obtain a structure with a neat and smooth edge and a good verticality. In addition, by etching the aluminum nitride thin film layer 20 by adopting the chlorine-based mixed gas plasma, the lateral corrosion of the aluminum nitride thin film layer 20 can be reduced, the influence on the piezoelectric layer performance of the AlN thin film layer is reduced, and the piezoelectric performance of the AlN thin film is effectively maintained. Therefore, the piezoelectric performance is not damaged in the patterning process of the method for patterning the aluminum nitride and silicon carbide composite structure, and the aluminum nitride and silicon carbide composite structure with high patterning quality can be obtained. Therefore, by the method for patterning the aluminum nitride and silicon carbide composite structure, the aluminum nitride thin film layer 20 is etched in the lateral direction less, the silicon carbide substrate 10 (SiC) can be quickly etched under the condition of protecting the AlN thin film piezoelectric layer, the processing efficiency is high, and the problems that the etching process of an AlN material in a chemical etching solution of the AlN material is difficult to control and the transferred pattern quality is poor in the traditional method are solved.
In one embodiment, in the step S10, a magnetron sputtering method is adopted, a radio frequency power is set to 190W to 210W, a sputtering pressure is set to 4mT to 5mT, a flow ratio of nitrogen to argon is 3:2, and a growth time is set to 1.9h to 2.1h, so that the aluminum nitride thin film layer 20 is prepared on the surface of the silicon carbide substrate 10.
Wherein the radio frequency power can be set to 200W, and the temperature of the single crystal substrate of the silicon carbide substrate 10 is 150 ℃ during preparation. Setting the sputtering pressure to be 4.5mT, the flow ratio of nitrogen to argon to be 3:2 and the growth time to be 2h, and preparing the aluminum nitride thin film layer 20 with the thickness of 1.5 mu m on the surface of the silicon carbide substrate 10. Through the S10, the aluminum nitride thin film layer 20 having a good c-axis (002) oriented AlN thin film (see fig. 3) and having a good piezoelectric property can be prepared on the surface of the silicon carbide substrate 10.
In S20, the first mask layer 30 is a photoresist. And spin-coating AZ5214 photoresist 6 microns on the surface of the aluminum nitride film layer 20 far away from the silicon carbide substrate 10, and performing photoetching to form a photoresist pattern, namely the first mask layer 30. At this time, the photoresist pattern is the same as the aluminum nitride structure 210 (pattern of the desired AlN film).
In one embodiment, in the S30, the chlorine-based mixed gas plasma is BCl 3 、Cl 2 And plasma generated from the mixed gas of Ar. By BCl 3 、Cl 2 And plasma generated by the mixed gas of Ar etches the aluminum nitride film layer 20, so that the lateral corrosion of the aluminum nitride film layer (AlN) is small, the piezoelectric property of the AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process.
In one embodiment, in S30, the silicon carbide substrate 10 with the first mask layer 30 is placed in a plasma etching vacuum chamber, and is vacuumized to 0.19 pascal by using BCl 3 、 Cl 2 And the plasma generated by the mixed gas of Ar etches the portion of the aluminum nitride thin film layer 20 (AlN film) where the first mask layer 30 is not provided. Wherein, the air pressure is set to be 0.3 Pa-0.5Pa 3 The flow rate is 14-16 sccm and Cl 2 And the flow rate is 34 sccm-36 sccm, the silicon carbide substrate 10 with the first mask layer 30 is placed in a plasma etching vacuum chamber, and the aluminum nitride thin film layer 20 is etched.
Preferably, the ICP power is set at 300W, the gas pressure is 0.4Pa, BCl 3 Cl at a flow rate of 15sccm 2 The flow rate was 35 sccm and the RF power was 80W. By setting the above process conditions, the structure shown in fig. 5 can be obtained, and at this time, the edge of the aluminum nitride structure 210 obtained after etching the aluminum nitride thin film layer 20 is neat and smooth, and the verticality is good.
In S40, the first mask layer 30 (photoresist mask layer) is removed by a 99.8% acetone solution at room temperature.
Referring to fig. 1 and 3, in one embodiment, the method for patterning the aluminum nitride and silicon carbide composite structure further includes:
s50, preparing a silicon dioxide film layer 40 on the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10;
s60, preparing a second mask layer 50 on the surface of the silicon dioxide film layer 40 far away from the silicon carbide substrate 10 according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate 10 with the second mask layer 50 into a corrosive liquid for corrosion, and exposing an etching window 110 of the silicon carbide substrate 10;
s80, placing the silicon carbide substrate 10 with the etching window 110 in a plasma etching vacuum cavity, and etching the silicon carbide substrate 10 by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure 120;
s90, removing the second mask layer 50 and the silicon dioxide thin film layer 40, and forming an aluminum nitride and silicon carbide composite structure 100 by the aluminum nitride structure 210 and the silicon carbide structure 120.
In S50, the silicon dioxide thin film layer 40 is prepared on the surface of the aluminum nitride structure 210 away from the silicon carbide substrate 10 and the surface of the silicon carbide substrate 10 close to the aluminum nitride structure 210 by Plasma Enhanced Chemical Vapor Deposition (PECVD)/LPCVD, so as to cover the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10.
Preferably, the temperature is set to 280 ℃ to 320 ℃, the time is 380s to 400s, the pressure is 1600torr to 1800torr and SiH 4 And N 2 And the flow rate ratio of O is 1:1, and the silicon dioxide film layer 40 with the thickness of 2 microns is prepared on the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10. At this time, the silicon dioxide thin film layer 40 may protect the entire aluminum nitride structure 210, thereby protecting the aluminum nitride structure 210 (AlN pattern) while rapidly etching the silicon carbide substrate 10 (SiC).
In one embodiment, the thickness of the silicon dioxide thin film layer 40 is greater than the thickness of the aluminum nitride structure 210, so that the sidewall of the aluminum nitride structure 210 can be protected.
In S60, according to the silicon dioxide mask pattern, a photoresist of 1.6 μm is spin-coated on the surface of the silicon dioxide thin film layer 40 away from the silicon carbide substrate 10, and is subjected to photolithography to form a photoresist pattern, i.e., the second mask layer 50. At this time, the second mask layer 50 (photoresist pattern) is opposite to the pattern of the silicon carbide substrate 10 (SiC substrate) as needed, and etching is performed on the position where the second mask layer 50 (photoresist pattern) is not provided.
In S70, the silicon carbide substrate 10 with the second mask layer 50 is placed in a BOE etching solution for etching. At this time, according to the second mask layer 50 (photoresist pattern), the silicon dioxide without photoresist is etched to expose the etching window 110 of the silicon carbide substrate 10.
At this time, a silicon dioxide thin film layer 40 and a second mask layer 50 (photoresist mask layer) are formed on the surface of the aluminum nitride structure 210 away from the silicon carbide substrate 10 to form SiO 2 The photoresist composite mask layer 200.SiO 2 2 The mask material used for the photoresist composite mask layer 200 is SiO which is difficult to be etched in fluorine-based plasma etching 2 The aluminum nitride structure 210 can be fully protected when etching is performed by combining the mask with the photoresist. By the SiO 2 The aluminum nitride structure 210 may be better protected by the photoresist composite mask layer 200. Furthermore, when the silicon carbide substrate 10 (SiC) is rapidly etched through the etching window 110, the aluminum nitride structure 210 is better protected, the etching process is easier to control, and the pattern quality of the aluminum nitride structure 210 is improved.
In S80, the silicon carbide substrate 10 with the etching window 110 is placed in a plasma etching vacuum chamber, vacuum pumping is performed until the pressure reaches 0.5 pascal, and the silicon carbide substrate 10 is etched by using fluorine-based mixed gas plasma.
Wherein the fluorine-based mixed gas plasma is SF 6 、O 2 And plasma generated from the mixed gas of Ar. By the fluorine-based mixed gas plasma pairWhen the silicon carbide substrate 10 (SiC) is etched, the aluminum nitride structure 210 is protected, the etching rate of the silicon carbide substrate 10 (SiC) is effectively increased, and the processing efficiency of the device is improved.
In the S80, the air pressure is set to be 0.4Pa to 0.6Pa 6 The flow rate is 49sccm to 51sccm and O 2 And placing the silicon carbide substrate 10 with the etching window 110 into a plasma etching vacuum chamber at a flow rate of 9-11 sccm, and etching the silicon carbide substrate 10 through the etching window 110.
Preferably, the ICP power is set at 1200W, gas pressure 0.5Pa, SF 6 Flow rate 50sccm, O 2 Flow rate 10sccm and RF power 80W through SF 6 、O 2 And plasma generated by the mixed gas of Ar etches the silicon carbide substrate 10 (SiC) to obtain an etched silicon carbide substrate (i.e., the silicon carbide structure 120). As shown in fig. 7, the silicon carbide structure 120 etched in S80 has a neat and smooth edge and a good verticality. At this time, the aluminum nitride and silicon carbide composite structure 100 includes the silicon carbide structure 120 and the aluminum nitride structure 210.
In S90, the second mask layer 50 and the silicon dioxide thin film layer 40 are removed in BOE etching solution, that is, siO is removed 2 And removing the photoresist composite mask layer 200 to obtain the patterned aluminum nitride and silicon carbide composite structure 100.
In one embodiment, an aluminum nitride and silicon carbide composite structure 100 is prepared using the aluminum nitride and silicon carbide composite structure patterning method as described in any of the above embodiments.
By the method for patterning the aluminum nitride and silicon carbide composite structure, when the silicon carbide structure 120 and the aluminum nitride structure 210 are prepared, a Cl-based etching gas is adopted for AlN (the aluminum nitride thin film layer 20), so that the lateral corrosion of AlN is small, the piezoelectric property of AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process. Meanwhile, siO formed through the silicon dioxide thin film layer 40 and the second mask layer 50 (photoresist mask layer) 2 The photoresist is combined with the mask layer 200,the AlN pattern can be protected while the SiC (silicon carbide substrate 10) is rapidly etched, and the pattern quality is improved. And by adopting fluorine-based gas etching on SiC, the etching rate of SiC is effectively improved while AlN is protected, and the processing efficiency of the device is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for patterning an aluminum nitride and silicon carbide composite structure is characterized by comprising the following steps:
s10, providing a silicon carbide substrate (10), and preparing an aluminum nitride thin film layer (20) on the surface of the silicon carbide substrate (10);
s20, preparing a first mask layer (30) on the surface, far away from the silicon carbide substrate (10), of the aluminum nitride thin film layer (20) according to an aluminum nitride mask pattern;
s30, placing the silicon carbide substrate (10) with the first mask layer (30) in a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer (20) by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure (210);
s40, removing the first mask layer (30);
s50, preparing a silicon dioxide film layer (40) on the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10);
s60, preparing a second mask layer (50) on the surface, far away from the silicon carbide substrate (10), of the silicon dioxide film layer (40) according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate (10) with the second mask layer (50) into a corrosive liquid for corrosion, and exposing an etching window (110) of the silicon carbide substrate (10);
s80, placing the silicon carbide substrate (10) with the etching window (110) into a plasma etching vacuum cavity, and etching the silicon carbide substrate (10) by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure (120);
s90, removing the second mask layer (50) and the silicon dioxide film layer (40), wherein the aluminum nitride structure (210) and the silicon carbide structure (120) form an aluminum nitride and silicon carbide composite structure (100);
in the S10, a magnetron sputtering method is adopted, the radio frequency power is set to be 190W-210W, the sputtering pressure is 4 mT-5 mT, the flow ratio of nitrogen to argon is 3:2, the growth time is 1.9 h-2.1h, and the aluminum nitride thin film layer (20) is prepared on the surface of the silicon carbide substrate (10).
2. The method for patterning an aluminum nitride and silicon carbide composite structure according to claim 1, wherein the aluminum nitride thin film layer (20) is formed as a 0.1 μm to 2.5 μm aluminum nitride thin film having c-axis (002) orientation on the surface of the silicon carbide substrate (10) in S10.
3. The method for patterning an aluminum nitride and silicon carbide composite structure according to claim 1, wherein in the S30, the chlorine-based mixed gas plasma is BCl 3 、Cl 2 And plasma generated from the mixed gas of Ar.
4. The method of patterning an aluminum nitride and silicon carbide composite structure according to claim 3, wherein in S30, a gas pressure of 0.3 Pa-0.5 Pa, BCl is set 3 Flow rates of 14sccm to 1169cm and Cl 2 And (3) placing the silicon carbide substrate (10) with the first mask layer (30) prepared at the flow rate of 34sccm to 36sccm into a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer (20).
5. The method of claim 2, wherein the step S50 is performed by PECVD at a temperature of 280-320 ℃, a time of 380s-400S, a pressure of 1600 torr-1800 torr, and a pressure of SiH 4 And N 2 The flow rate ratio of O is 1:1, and the silicon dioxide film layer (40) is prepared on the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10).
6. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 5, wherein the silicon dioxide thin film layer (40) covers the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10), and the thickness of the silicon dioxide thin film layer (40) is greater than the thickness of the aluminum nitride structure (210).
7. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 2, wherein in the S80, the fluorine-based mixed gas plasma is SF 6 、O 2 And plasma generated from the mixed gas of Ar.
8. The method of claim 7, wherein in S80, a gas pressure of 0.4 Pa-0.6 Pa, SF 6 The flow rate is 49sccm to 51sccm and O 2 And the flow rate is 9sccm to 11sccm, the silicon carbide substrate (10) with the etching window (110) is placed into a plasma etching vacuum cavity, and the silicon carbide substrate (10) is etched from the etching window (110).
9. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 1, wherein the second mask layer (50) is a photoresist mask layer.
10. An aluminum nitride and silicon carbide composite structure prepared by the method for patterning an aluminum nitride and silicon carbide composite structure according to any one of claims 1 to 9.
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