CN111024982B - Servo circuit of high-temperature quartz flexible accelerometer - Google Patents
Servo circuit of high-temperature quartz flexible accelerometer Download PDFInfo
- Publication number
- CN111024982B CN111024982B CN201911311893.0A CN201911311893A CN111024982B CN 111024982 B CN111024982 B CN 111024982B CN 201911311893 A CN201911311893 A CN 201911311893A CN 111024982 B CN111024982 B CN 111024982B
- Authority
- CN
- China
- Prior art keywords
- circuit
- amplifier
- resistor
- output
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 28
- 230000005496 eutectics Effects 0.000 claims description 26
- 238000003466 welding Methods 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000005070 sampling Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 12
- 239000003381 stabilizer Substances 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 230000000007 visual effect Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000013519 translation Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000003208 petroleum Substances 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to a high-temperature quartz flexible accelerometer servo circuit, which comprises a servo amplifier and a gauge outfit component, wherein the servo amplifier and the gauge outfit component form a closed-loop implementation; the gauge outfit component comprises a torquer component and a differential capacitor component; the torquer component comprises a torque sensor L1; the servo amplifier comprises a pre-conversion circuit U1, a double-circuit voltage stabilizing circuit for supplying power to the pre-conversion circuit U1, a feedback resistance-capacitance network and a transconductance compensation amplifier U4; the pre-conversion circuit U1 comprises an operational amplifier, a current integrator, a differential capacitance detector for detecting capacitance difference and a triangular wave generator; the triangular wave generator comprises an output circuit, a constant current source and a bias circuit; the invention has reasonable design, compact structure and convenient use.
Description
Technical Field
The invention relates to a high-temperature quartz flexible accelerometer servo circuit, belongs to the technical field of sensor manufacturing, and particularly relates to an accelerometer servo circuit which is integrated with A/D conversion, miniaturized, environment-required at a high temperature of 185 ℃ and high in reliability.
Background
Quartz flexible accelerometers, one of the key components in inertial navigation systems, are high-precision sensors that measure linear acceleration, the importance of which is becoming more and more well understood. The inertial navigation system with the accelerometer as the core is not interfered by radio waves and is not influenced by weather and magnetic difference during working, has the characteristics of simple structure, small volume, high precision and sensitivity, good stability, low power consumption, low cost and the like, can be widely applied to the fields of aerospace, aviation, inertial navigation and the like, is increasingly applied to a plurality of civil fields of petroleum, buildings and the like, has larger potential demand, and has huge social benefit and economic benefit. Along with the high-speed development of economy in China, the demand of quartz flexible accelerometers in inclinometers, level meters, petroleum logging, tunnel excavation, precise inertial positioning measurement, geological detection, natural disaster prevention and other aspects is increased year by year, and particularly in field operation, low-power consumption, low-noise accelerometers meeting the high temperature of 185 ℃ are urgently needed.
At present, the requirements of the petroleum drilling field meet the requirements of a quartz flexible accelerometer servo circuit with the working temperature of-45 ℃ to 185 ℃. Conventional quartz flexible accelerometer servo circuits are unable to meet the above wide temperature range requirements.
The overcurrent protection function of the quartz flexible accelerometer is that the universal transformer samples input current and compares the collected potential with a stable potential to realize whether the soft start end of the PWM chip discharges to the ground. The design is greatly influenced by the environmental temperature, the protection point has larger temperature drift, and the overcurrent protection point cannot be accurately set; the power supply module with the design cannot be loaded with capacitive load, and when the capacitive load of the module is loaded with the capacitive load, the output current is large at the moment of starting, so that the overcurrent protection of the module can be triggered; when the module is protected, the module stops working, the protection current cannot collect potential, the module resumes working, and the overcurrent protection is triggered when the output current is large at the moment of starting. Therefore, the module cannot exit the protection state and is always in the working and protection cycle, and the output voltage of the module can oscillate within a certain range.
The existing design is greatly influenced by the ambient temperature, and cannot set a precise overcurrent protection point; the load of the power supply module cannot be added with a capacitive load.
Disclosure of Invention
The invention aims to solve the technical problem of providing a high-temperature quartz flexible accelerometer servo circuit and an implementation method thereof. The invention solves the problems of low reliability and high barrier rate of the high-temperature environment accelerometer servo circuit; the problem that the market has no integrated digital output circuit, the volume is large and the like is solved. The product has very broad market prospect in a miniaturized and high-environmental-temperature-requirement system. According to the invention, accurate overcurrent protection points can be set through sampling of the sampling resistor, and the temperature drift is small; can carry capacitive load and can not be mistakenly protected.
In order to solve the problems, the invention adopts the following technical scheme:
a servo circuit of a high-temperature quartz flexible accelerometer comprises a servo amplifier and a gauge outfit component which form a closed loop;
the gauge outfit component comprises a torquer component and a differential capacitor component;
the torquer component comprises a torque sensor L1;
the servo amplifier comprises a pre-conversion circuit U1, a double-circuit voltage stabilizing circuit for supplying power to the pre-conversion circuit U1, a feedback resistance-capacitance network and a transconductance compensation amplifier U4;
the pre-conversion circuit U1 comprises an operational amplifier, a current integrator, a differential capacitance detector for detecting capacitance difference and a triangular wave generator; the triangular wave generator comprises an output circuit, a constant current source and a bias circuit;
the triangular wave generator outputs a triangular wave signal through the capacitance detector, the triangular wave signal is integrated through the current integrator, the integrated signal is amplified through the operational amplifier and then output to the transconductance compensation amplifier U4, the transconductance compensation amplifier U4 is divided into three paths, the first path is regulated through the feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the moment sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of the current signal, and the feedback resistance-capacitance network regulates and transmits feedback information to the operational amplifier; the second path is output to the moment sensor L1, and the moment sensor L1 feeds back the generated feedback signal to the triangular wave generator through the differential capacitance component, so that closed-loop control of the moment sensor L1 is realized.
As a further improvement of the above technical scheme:
the third output of the transconductance compensation amplifier U4 sequentially passes through a resistance sampling circuit, a low-pass filter circuit, a potential translation circuit and an A/D sampling circuit and is output through an I2C bus, and the input end of the I2C bus is connected with temperature sampling for detecting temperature data;
transistors on a process layout of the servo amplifier are symmetrically arranged;
the operational amplifier is electrically connected with a triode for circuit compensation;
the double-circuit voltage stabilizing circuit comprises a positive voltage stabilizing circuit unit and a negative voltage stabilizing circuit unit;
the positive voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C12 and C13, and an external positive power supply is connected to the input end of the positive voltage stabilizing circuit unit through a diode D1;
the negative voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C14 and C15, and an external negative power supply is reversely connected to the input end of the positive voltage stabilizing circuit unit through a diode D2;
the differential capacitance detector is connected with a detection end TE self-checking voltage signal after passing through a current limiting resistor R1;
the feedback resistance-capacitance network comprises resistors R3-R7 and capacitors C8-C9;
the resistor R6 and the capacitor C9 form an input resonant circuit, the resistor R4 and the capacitor C8 form an output resonant circuit,
the resistor R5 is connected between the transconductance compensation amplifier U4 and the operational amplifier, the input end of the resistor R5 is grounded through the parallel input resonant circuit and the resistor R7, and the output end of the resistor R5 is grounded through the parallel output resonant circuit and the resistor R3.
The integrated circuit chips of the pre-conversion circuit U1 and the transconductance compensation amplifier U4 are silver-backed in a welding mode.
The servo amplifier and/or the gauge outfit component are used as a load, and the input end of the servo amplifier and/or the gauge outfit component is electrically connected with the output end of the switching power supply through a current protection circuit;
the current protection circuit comprises a MOS tube 1Q2 and a sampling resistor 1R2 which are connected in series in an output loop of the power supply module, a current output end Vo which is electrically connected with one end pin of the MOS tube 1Q2, a first amplifier 1A1, a second comparator 1A2, a voltage stabilizing diode 1IC1, voltage dividing resistors 1R8 and 1R9, a triode 1Q3, a power supply circuit,
The power supply circuit comprises an input end Vcc, a resistor 1R1, a capacitor 1CI and a three-terminal voltage stabilizer 1DZ
The external electric input end Vcc supplies power to the three-terminal voltage stabilizer 1DZ through resonance of the resistor 1R1 and the capacitor 1CI, the three-terminal voltage stabilizer 1DZ supplies power to the second comparator 1A2, the three-terminal voltage stabilizer 1DZ supplies power to the grid electrode of the MOS tube 1Q2 through the back-pressure resistor 1R8, and the grid electrode of the MOS tube 1Q2 is grounded through the resistor 1R 11;
the other end pin of the MOS tube 1Q2 is electrically connected with a sampling resistor 1R2, the other end of the MOS tube 1Q2 is also connected with the forward end of the first amplifier 1A1 through a resonant circuit of a capacitor 1C3 of a resistor 1R5, the reverse end of the first amplifier 1A1 is grounded through a resistor 1R6, the reverse end and the output end of the first amplifier 1A1 are electrically connected with a resistor 1R12,
the output end of the first amplifier 1A1 is connected with the forward end of the second comparator 1A2 through a resonant circuit which is used for setting protection delay time of a resistor 1R15 and a capacitor 1C6, and the reverse end of the second comparator 1A2 is grounded through a zener diode 1IC 1;
the output end of the second comparator 1A2 is connected with the base electrode of the triode 1Q3 through a resistor 1R10 in two paths through the output end of the diode 1D1, the emitter electrode of the triode 1Q3 is connected with one path through a capacitor 1C5, and the collector electrode of the triode 1Q3 is connected with the grid electrode of the MOS tube 1Q 2.
A realization method of a servo circuit of a high-temperature quartz flexible accelerometer comprises the following steps;
the method comprises the steps that firstly, integrated circuit chips of a pre-conversion circuit U1 and a transconductance compensation amplifier U4 adopt a welding mode for backing silver; firstly, raising the temperature of a heat table of a eutectic welding machine to 450 ℃; then, placing the metal substrate with silver plated surface on a heated eutectic welding machine heating table, wherein the silver plating thickness of the metal substrate is 2 mu m-5 mu m; secondly, placing the chip and the tray which need back metallization on a material table of a eutectic welding machine; thirdly, moving a heat table of the eutectic welding machine to enable a chip tray to appear in a microscope visual field, moving an operating handle to enable clamping tweezers to be located right above the chip, moving downwards to enable a notch of a right piece of the clamping tweezers to be pressed on the edge of the chip, simultaneously pressing a button of the handle to enable the tweezers to clamp the chip, enabling the tweezers to clamp the chip at a position with the thickness of 1/2-2/3, and moving the operating handle to lift the clamping tweezers; then, moving the eutectic thermal table to enable the silver plating metal substrate to appear in the view field of the microscope, moving the operating handle to enable the clamping chip to be aligned with the silver plating metal substrate and fall down to enable the chip to be pressed on the metal substrate, and simultaneously enabling the operating handle to enable the back of the chip to perform clockwise movement friction relative to the bonding pad, wherein the friction amplitude is 0.1-0.2 mm, and the friction movement is 3-5 seconds; then, when a uniform gold-silicon eutectic interface appears on the periphery of the bottom of the chip, the chip is translated by 3-4mm; and then, vertically lifting the operating handle, and finishing the metallization of the back surface of the chip.
As a further improvement of the above technical scheme:
after the first step, executing the second step, firstly, taking a servo amplifier and/or a gauge outfit assembly as a load, wherein the input end of the servo amplifier and/or the gauge outfit assembly is electrically connected with the output end of a switching power supply through a current protection circuit; then, a reference voltage is set through a zener diode 1IC1, the amplification factor of the potential acquired by the amplifier 1A1 is set through resistors 1R6 and 1R12, the protection delay time is set through a resistor 1R15 and a capacitor 1C6, and the switching frequency of the Mos tube 1Q2 is set through a diode 1D1, a capacitor 1C5 and a resistor 1R 10;
step three, when a switching power supply is started, the output current is higher than the set current, the output loop of a power supply module is over-current, the sampling resistor 1R2 is used for comparing the acquired potential with the reference potential after amplifying the potential by the first amplifier 1A1, the potential of the same-phase end is increased by the delay function of the resistor 1R15 and the capacitor 1C6, when the potential of the same-phase end is higher than the potential of the opposite-phase end, the second comparator 1A2 outputs a high-level driving triode 1Q3, the grid electrode of the MOS tube 1Q2 is conducted to the ground, the drain electrode and the source electrode of the MOS tube are turned off, and the output of the power supply module is disconnected from a load; then, when the power supply module is operating normally, the potential of the same-phase terminal is increased at a lower speed due to the delay function of the same-phase terminal of the second comparator 1A2, and the load is operating.
When the load works, the fourth step is executed,
firstly, a double-circuit voltage stabilizing circuit supplies power to a front-end conversion circuit U1, a bias circuit performs circuit bias, a triangular wave generator outputs triangular waves, and integration is performed through a current integrator; then, the integrated signal is amplified by an operational amplifier and then output to a transconductance compensation amplifier U4, and the transconductance compensation amplifier U4 converts the voltage applied to the input end of the circuit into output current; secondly, the transconductance compensation amplifier U4 is regulated through a feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the torque sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of a current signal, and meanwhile, the feedback resistance-capacitance network regulates to transmit feedback information to the operational amplifier, and meanwhile, a second path of feedback information is output to the torque sensor L1; and the generated feedback signal is fed back and input to the triangular wave generator through the differential capacitance component by the torque sensor L1, so that closed-loop control of the torque sensor L1 is realized.
The invention ensures that the circuit has enough output current by applying a reasonable circuit topological structure, improves the power driving capability, generates a moment effect and meets the dynamic performance of the circuit. The protection circuit is applied, and 2 diodes are connected to provide a discharge loop to prevent overload of the power amplifier output stage caused by short circuit or external interference. The circuit adopts the form of a composite tube chip, strictly realizes the junction depth of PN junctions, ion implantation and other technological modes, and improves the high-temperature performance of the circuit. The voltage stabilizing circuit is designed into a resistor voltage dividing type, and the power of the voltage stabilizing circuit is increased; the transconductance compensation amplifier chip thickness is thinned to 200 μm. Can meet the requirement of high temperature 185 ℃ environment temperature. Through the measures, the problems of low reliability and high barrier rate of the high-temperature environment accelerometer servo circuit are solved;
the servo amplifier of the invention linearly and highly accurately converts the analog signal output by the accelerometer into the digital signal output by integrating the 32-bit A/D conversion circuit, thereby realizing miniaturization, high integration level and high-accuracy digital signal output.
The high-temperature environment accelerometer servo circuit has low reliability and high barrier rate;
fills the blank of a servo circuit of an accelerometer without integrated digital output and a miniaturized product in the market.
The invention has reasonable design, low cost, firmness, durability, safety, reliability, simple operation, time and labor saving, fund saving, compact structure and convenient use.
Drawings
Fig. 1 is a block diagram of the main circuit of the present invention.
Fig. 2 is a schematic diagram of the main circuit of the present invention.
Fig. 3 is a block diagram of the power supply overcurrent protection circuit of the present invention.
Fig. 4 is a schematic diagram of a power supply overcurrent protection circuit according to the present invention.
Detailed Description
1-4, the present invention includes a servo amplifier and header assembly forming a closed loop implementation;
the gauge outfit component comprises a torquer component and a differential capacitor component;
the torquer component comprises a torque sensor L1;
the servo amplifier comprises a pre-conversion circuit U1, a double-circuit voltage stabilizing circuit for supplying power to the pre-conversion circuit U1, a feedback resistance-capacitance network and a transconductance compensation amplifier U4;
the pre-conversion circuit U1 comprises an operational amplifier, a current integrator, a differential capacitance detector for detecting capacitance difference and a triangular wave generator; the triangular wave generator comprises an output circuit, a constant current source and a bias circuit;
the triangular wave generator outputs a triangular wave signal through the capacitance detector, the triangular wave signal is integrated through the current integrator, the integrated signal is amplified through the operational amplifier and then output to the transconductance compensation amplifier U4, the transconductance compensation amplifier U4 is divided into three paths, the first path is regulated through the feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the moment sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of the current signal, and the feedback resistance-capacitance network regulates and transmits feedback information to the operational amplifier; the second path is output to the moment sensor L1, and the moment sensor L1 feeds back the generated feedback signal to the triangular wave generator through the differential capacitance component, so that closed-loop control of the moment sensor L1 is realized; thereby realizing the servo adjustment control of the accelerometer and avoiding external interference.
The third path of output sequentially passes through a resistance sampling circuit, a low-pass filter circuit, a potential translation circuit and an A/D sampling circuit and then passes through I 2 C bus output, I 2 The input end of the C bus is connected with a temperature sample for detecting temperature data;
transistors on a process layout of the servo amplifier are symmetrically arranged;
the operational amplifier is electrically connected with a triode for circuit compensation;
the double-circuit voltage stabilizing circuit comprises a positive voltage stabilizing circuit unit and a negative voltage stabilizing circuit unit;
the positive voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C12 and C13, and an external positive power supply is connected to the input end of the positive voltage stabilizing circuit unit through a diode D1;
the negative voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C14 and C15, and an external negative power supply is reversely connected to the input end of the positive voltage stabilizing circuit unit through a diode D2;
the differential capacitance detector is connected with a detection end TE self-checking voltage signal after passing through a current limiting resistor R1;
the feedback resistance-capacitance network comprises resistors R3-R7 and capacitors C8-C9;
the resistor R6 and the capacitor C9 form an input resonant circuit, the resistor R4 and the capacitor C8 form an output resonant circuit,
the resistor R5 is connected between the transconductance compensation amplifier U4 and the operational amplifier, the input end of the resistor R5 is grounded through the parallel input resonant circuit and the resistor R7, and the output end of the resistor R5 is grounded through the parallel output resonant circuit and the resistor R3;
the integrated circuit chips of the pre-conversion circuit U1 and the transconductance compensation amplifier U4 are subjected to silver backing in a welding mode;
the chips can be classified into back side metallized chips and back side non-metallized chips according to the back side process. The back side metallized die may be soldered or bonded while the back side of the back side non-metallized die is silicon only bonded. However, in a high temperature environment, bonding is not applicable and only soldering is possible, so that the chip to be soldered needs to have its back surface metallized. The invention adds a new chip back metallization process for a chip using unit, and changes the chip of the front-end conversion circuit U1 and the transconductance compensation amplifier U4 using the welding process into a weldable chip; comprises the steps of,
firstly, raising the temperature of a heat table of a eutectic welding machine to 450 ℃; then, placing the metal substrate with silver plated surface on a heated eutectic welding machine heating table, wherein the silver plating thickness of the metal substrate is 2 mu m-5 mu m; secondly, placing the chip and the tray which need back metallization on a material table of a eutectic welding machine; thirdly, moving a heat table of the eutectic welding machine to enable a chip tray to appear in a microscope visual field, moving an operating handle to enable clamping tweezers to be located right above the chip, moving downwards to enable a notch of a right piece of the clamping tweezers to be pressed on the edge of the chip, simultaneously pressing a button of the handle to enable the tweezers to clamp the chip, enabling the tweezers to clamp the chip at a position with the thickness of 1/2-2/3, and moving the operating handle to lift the clamping tweezers; then, moving the eutectic thermal table to enable the silver plating metal substrate to appear in the view field of the microscope, moving the operating handle to enable the clamping chip to be aligned with the silver plating metal substrate and fall down to enable the chip to be pressed on the metal substrate, and simultaneously enabling the operating handle to enable the back of the chip to perform clockwise movement friction relative to the bonding pad, wherein the friction amplitude is 0.1-0.2 mm, and the friction movement is 3-5 seconds; then, when a uniform gold-silicon eutectic interface appears on the periphery of the bottom of the chip, the chip is translated by 3-4mm; and then, vertically lifting the operating handle, and finishing the metallization of the back surface of the chip. .
The method is a new back metallization process, and a eutectic welder is adopted to metalize chips without metallization on the back, so that the chips unsuitable for the welding process are converted into solderable chips. The eutectic welding process is adopted to metalize the surface of the silicon layer on the back of the chip, and the non-weldable chip is changed into a weldable chip. The urgent demands of the chip using unit part are solved.
A transconductance compensation amplifier is a circuit that converts a voltage applied to its input into an output current. Static power consumption of the chip is reduced by reasonably designing bias of the working point, and the output stage adopts a composite tube form to improve the capability of outputting current; in order to ensure the temperature characteristic of the circuit, the patterns are basically symmetrical when the transistors are designed in the process layout, certain deviation exists among the transistors of the same type, the temperature performance is not easy to ensure, and in order to ensure that the transconductance amplifying circuit has better temperature characteristic, the circuit is compensated by adopting the triode, so that the temperature drift of the circuit is reduced. In order to meet the requirement of the high-temperature 185 ℃ environment temperature, a front-end conversion circuit chip and a transconductance compensation amplifier chip in a servo circuit are thinned, and a welding mode is adopted in the process. The high-temperature A/D conversion circuit adopts a 32-bit A/D conversion chip to realize high-precision A/D conversion.
The servo amplifier and/or the gauge outfit component are used as a load, and the input end of the servo amplifier and/or the gauge outfit component is electrically connected with the output end of the switching power supply through a current protection circuit;
the current protection circuit comprises a MOS tube 1Q2 and a sampling resistor 1R2 which are connected in series in an output loop of the power supply module, a current output end Vo which is electrically connected with one end pin of the MOS tube 1Q2, a first amplifier 1A1, a second comparator 1A2, a voltage stabilizing diode 1IC1, voltage dividing resistors 1R8 and 1R9, a triode 1Q3, a power supply circuit,
The power supply circuit comprises an input end Vcc, a resistor 1R1, a capacitor 1CI and a three-terminal voltage stabilizer 1DZ
The external electric input end Vcc supplies power to the three-terminal voltage stabilizer 1DZ through resonance of the resistor 1R1 and the capacitor 1CI, the three-terminal voltage stabilizer 1DZ supplies power to the second comparator 1A2, the three-terminal voltage stabilizer 1DZ supplies power to the grid electrode of the MOS tube 1Q2 through the back-pressure resistor 1R8, and the grid electrode of the MOS tube 1Q2 is grounded through the resistor 1R 11;
the other end pin of the MOS tube 1Q2 is electrically connected with a sampling resistor 1R2, the other end of the MOS tube 1Q2 is also connected with the forward end of the first amplifier 1A1 through a resonant circuit of a capacitor 1C3 of a resistor 1R5, the reverse end of the first amplifier 1A1 is grounded through a resistor 1R6, the reverse end and the output end of the first amplifier 1A1 are electrically connected with a resistor 1R12,
the output end of the first amplifier 1A1 is connected with the forward end of the second comparator 1A2 through a resonant circuit which is used for setting protection delay time of a resistor 1R15 and a capacitor 1C6, and the reverse end of the second comparator 1A2 is grounded through a zener diode 1IC 1;
the output end of the second comparator 1A2 is connected with the base electrode of the triode 1Q3 through a resistor 1R10 in two paths through the output end of the diode 1D1, the emitter electrode of the triode 1Q3 is connected with one path through a capacitor 1C5, and the collector electrode of the triode 1Q3 is connected with the grid electrode of the MOS tube 1Q 2.
In the design, the MOS tube 1Q2 and the sampling resistor 1R2 are connected in series in an output loop of a power supply module, and collected electric potential is amplified by the amplifiers 1A1 and 1A2 LM258 and then compared with a reference provided by the TLVH431 to realize the switching of the triode 1Q3, so that the switching of the MOS tube 1Q2 is realized. The three-terminal voltage stabilizer 1DZ 78L12 supplies power for the LM258 and the TLVH431 and provides grid driving voltage for the MOS tube 1Q 2; 1R8, 1R11 are used to set the 1Q2 gate voltage level; the LM258 is composed of two independent operational amplifiers, wherein the first part realizes the amplifying function, and the second part realizes the voltage comparing function; 1R6 and 1R12 are used for setting the magnification of the collected potential; 1R15 and 1C6 are used for setting protection delay time to prevent the error protection of the instantaneous current large circuit when capacitive load is added; 1D1, 1C5, 1R10 are used to set 1Q2 switching frequency, preventing 1Q2 switching frequency from burning out too fast.
When the output loop of the power module is over-current, the sampling resistor 1R2 acquires the potential which is amplified by the first part of the LM258, and then the second part of the potential is compared with the reference potential provided by the TLVH431, the potential at the same phase end can be slowly increased due to the delay function, when the potential is higher than the potential at the opposite phase end, the LM258 can output a high-level driving triode 1Q3, so that the grid electrode of the MOS tube 1Q2 is grounded, the drain electrode and the source electrode are turned off, and the output of the power module is disconnected from a load. When the power supply module works normally, a capacitive load is added, the output current is large at the loading moment, and as the in-phase end of the LM258 comparator has a delay function, the potential of the in-phase end can slowly rise, so that protection can not be triggered when the capacitive load is added.
1R15 and 1C6 between the LM258 first part operational amplifier output end and the second part operational amplifier in-phase end play a role in delay, so that error protection during capacitive loading of the module can be effectively avoided; 1D1, 1R10 and 1C5 between the output end of the second part of the LM258 operational amplifier and the base electrode of the triode can effectively realize the on-off frequency of the collector and the emitter of the triode.
The implementation method of the high-temperature quartz flexible accelerometer servo circuit comprises the following steps of;
the method comprises the steps that firstly, integrated circuit chips of a pre-conversion circuit U1 and a transconductance compensation amplifier U4 adopt a welding mode for backing silver; firstly, raising the temperature of a heat table of a eutectic welding machine to 450 ℃; then, placing the metal substrate with silver plated surface on a heated eutectic welding machine heating table, wherein the silver plating thickness of the metal substrate is 2 mu m-5 mu m; secondly, placing the chip and the tray which need back metallization on a material table of a eutectic welding machine; thirdly, moving a heat table of the eutectic welding machine to enable a chip tray to appear in a microscope visual field, moving an operating handle to enable clamping tweezers to be located right above the chip, moving downwards to enable a notch of a right piece of the clamping tweezers to be pressed on the edge of the chip, simultaneously pressing a button of the handle to enable the tweezers to clamp the chip, enabling the tweezers to clamp the chip at a position with the thickness of 1/2-2/3, and moving the operating handle to lift the clamping tweezers; then, moving the eutectic thermal table to enable the silver plating metal substrate to appear in the view field of the microscope, moving the operating handle to enable the clamping chip to be aligned with the silver plating metal substrate and fall down to enable the chip to be pressed on the metal substrate, and simultaneously enabling the operating handle to enable the back of the chip to perform clockwise movement friction relative to the bonding pad, wherein the friction amplitude is 0.1-0.2 mm, and the friction movement is 3-5 seconds; then, when a uniform gold-silicon eutectic interface appears on the periphery of the bottom of the chip, the chip is translated by 3-4mm; and then, vertically lifting the operating handle, and finishing the metallization of the back surface of the chip.
After the first step, executing the second step, firstly, taking a servo amplifier and/or a gauge outfit assembly as a load, wherein the input end of the servo amplifier and/or the gauge outfit assembly is electrically connected with the output end of a switching power supply through a current protection circuit; then, a reference voltage is set through a zener diode 1IC1, the amplification factor of the potential acquired by the amplifier 1A1 is set through resistors 1R6 and 1R12, the protection delay time is set through a resistor 1R15 and a capacitor 1C6, and the switching frequency of the Mos tube 1Q2 is set through a diode 1D1, a capacitor 1C5 and a resistor 1R 10;
step three, when a switching power supply is started, the output current is higher than the set current, the output loop of a power supply module is over-current, the sampling resistor 1R2 is used for comparing the acquired potential with the reference potential after amplifying the potential by the first amplifier 1A1, the potential of the same-phase end is increased by the delay function of the resistor 1R15 and the capacitor 1C6, when the potential of the same-phase end is higher than the potential of the opposite-phase end, the second comparator 1A2 outputs a high-level driving triode 1Q3, the grid electrode of the MOS tube 1Q2 is conducted to the ground, the drain electrode and the source electrode of the MOS tube are turned off, and the output of the power supply module is disconnected from a load; then, when the power supply module is operating normally, the potential of the same-phase terminal is increased at a lower speed due to the delay function of the same-phase terminal of the second comparator 1A2, and the load is operating.
When the load works, the fourth step is executed,
firstly, a double-circuit voltage stabilizing circuit supplies power to a front-end conversion circuit U1, a bias circuit performs circuit bias, a triangular wave generator outputs triangular waves, and integration is performed through a current integrator; then, the integrated signal is amplified by an operational amplifier and then output to a transconductance compensation amplifier U4, and the transconductance compensation amplifier U4 converts the voltage applied to the input end of the circuit into output current; secondly, the transconductance compensation amplifier U4 is regulated through a feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the torque sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of a current signal, and meanwhile, the feedback resistance-capacitance network regulates to transmit feedback information to the operational amplifier, and meanwhile, a second path of feedback information is output to the torque sensor L1; and the generated feedback signal is fed back and input to the triangular wave generator through the differential capacitance component by the torque sensor L1, so that closed-loop control of the torque sensor L1 is realized.
Claims (1)
1. A high-temperature quartz flexible accelerometer servo circuit is characterized in that: comprises a servo amplifier and a gauge outfit component which form a closed loop implementation;
the gauge outfit component comprises a torquer component and a differential capacitor component;
the torquer component comprises a torque sensor L1;
the servo amplifier comprises a pre-conversion circuit U1, a double-circuit voltage stabilizing circuit for supplying power to the pre-conversion circuit U1, a feedback resistance-capacitance network and a transconductance compensation amplifier U4;
the pre-conversion circuit U1 comprises an operational amplifier, a current integrator, a differential capacitance detector for detecting capacitance difference and a triangular wave generator; the triangular wave generator comprises an output circuit, a constant current source and a bias circuit;
the triangular wave generator outputs triangular wave signals through the differential capacitance detector, the triangular wave signals are integrated through the current integrator, the integrated signals are amplified through the operational amplifier and then output to the transconductance compensation amplifier U4, the transconductance compensation amplifier U4 is divided into three paths, the first path is regulated through the feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the moment sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of the current signals, and the feedback resistance-capacitance network regulates and transmits feedback information to the operational amplifier; the second path is output to the moment sensor L1, and the moment sensor L1 feeds back the generated feedback signal to the triangular wave generator through the differential capacitance component, so that closed-loop control of the moment sensor L1 is realized;
the third output of the transconductance compensation amplifier U4 sequentially passes through a resistance sampling circuit, a low-pass filter circuit, a potential translation circuit and an A/D sampling circuit and then passes through I 2 C bus output, I 2 The input end of the C bus is connected with a temperature sample for detecting temperature data;
transistors on a process layout of the servo amplifier are symmetrically arranged;
the operational amplifier is electrically connected with a triode for circuit compensation;
the double-circuit voltage stabilizing circuit comprises a positive voltage stabilizing circuit unit and a negative voltage stabilizing circuit unit;
the positive voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C12 and C13, and an external positive power supply is connected to the input end of the positive voltage stabilizing circuit unit through a diode D1;
the negative voltage stabilizing circuit unit is connected with a circuit comprising filter capacitors C14 and C15, and an external negative power supply is reversely connected to the input end of the positive voltage stabilizing circuit unit through a diode D2;
the differential capacitance detector is connected with a detection end TE self-checking voltage signal after passing through a current limiting resistor R1;
the feedback resistance-capacitance network comprises resistors R3-R7 and capacitors C8-C9;
the resistor R6 and the capacitor C9 form an input resonant circuit, the resistor R4 and the capacitor C8 form an output resonant circuit,
the resistor R5 is connected between the transconductance compensation amplifier U4 and the operational amplifier, the input end of the resistor R5 is grounded through the parallel input resonant circuit and the resistor R7, and the output end of the resistor R5 is grounded through the parallel output resonant circuit and the resistor R3;
the integrated circuit chips of the pre-conversion circuit U1 and the transconductance compensation amplifier U4 are subjected to silver backing in a welding mode;
the servo amplifier and/or the gauge outfit component are used as a load, and the input end of the servo amplifier and/or the gauge outfit component is electrically connected with the output end of the switching power supply through a current protection circuit;
the current protection circuit comprises an MOS tube 1Q2 and a sampling resistor 1R2 which are connected in series in an output loop of the power module, a current output end Vo which is electrically connected with one end pin of the MOS tube 1Q2, a first amplifier 1A1, a second comparator 1A2, a voltage stabilizing diode 1IC1, divider resistors 1R8 and 1R9, a triode 1Q3 and a power supply circuit;
the power supply circuit comprises an input end Vcc, a resistor 1R1, a capacitor 1CI and a three-terminal voltage regulator 1DZ;
the external electric input end Vcc supplies power to the three-terminal voltage stabilizer 1DZ through resonance of the resistor 1R1 and the capacitor 1CI, the three-terminal voltage stabilizer 1DZ supplies power to the second comparator 1A2, the three-terminal voltage stabilizer 1DZ supplies power to the grid electrode of the MOS tube 1Q2 through the back-pressure resistor 1R8, and the grid electrode of the MOS tube 1Q2 is grounded through the resistor 1R 11;
the other end pin of the MOS tube 1Q2 is electrically connected with a sampling resistor 1R2, the other end of the MOS tube 1Q2 is also connected with the forward end of the first amplifier 1A1 through a resonant circuit of a capacitor 1C3 of a resistor 1R5, the reverse end of the first amplifier 1A1 is grounded through a resistor 1R6, the reverse end and the output end of the first amplifier 1A1 are electrically connected with a resistor 1R12,
the output end of the first amplifier 1A1 is connected with the forward end of the second comparator 1A2 through a resonant circuit which is used for setting protection delay time of a resistor 1R15 and a capacitor 1C6, and the reverse end of the second comparator 1A2 is grounded through a zener diode 1IC 1;
the output end of the second comparator 1A2 is divided into two paths through the output end of the diode 1D1, one path is connected with the base electrode of the triode 1Q3 through the resistor 1R10, the other path is connected with the emitter electrode of the triode 1Q3 through the capacitor 1C5, and the collector electrode of the triode 1Q3 is connected with the grid electrode of the MOS tube 1Q 2;
closed loop control of the moment sensor L1 is realized; comprises the following steps of;
the method comprises the steps that firstly, integrated circuit chips of a pre-conversion circuit U1 and a transconductance compensation amplifier U4 adopt a welding mode for backing silver; firstly, raising the temperature of a heating table of a eutectic welding machine to 450 ℃; then, placing the metal substrate with silver plated surface on a heated eutectic welding machine heating table, wherein the silver plating thickness of the metal substrate is 2 mu m-5 mu m; secondly, placing the chip and the tray which need back metallization on a material table of a eutectic welding machine; thirdly, moving a heating table of the eutectic welder to enable a chip tray to appear in a microscope visual field, moving an operating handle to enable clamping tweezers to be located right above the chip, moving downwards to enable a notch of a right piece of the clamping tweezers to be pressed on the edge of the chip, simultaneously pressing a handle button to enable the tweezers to clamp the chip, enabling the tweezers to clamp the chip at a position with the thickness of 1/2-2/3, and moving the operating handle to lift the clamping tweezers; then, moving the eutectic thermal table to enable the silver plating metal substrate to appear in the view field of the microscope, moving the operating handle to enable the clamping chip to be aligned with the silver plating metal substrate and fall down to enable the chip to be pressed on the metal substrate, and simultaneously enabling the operating handle to enable the back of the chip to perform clockwise movement friction relative to the bonding pad, wherein the friction amplitude is 0.1-0.2 mm, and the friction movement is 3-5 seconds; then, when a uniform gold-silicon eutectic interface appears on the periphery of the bottom of the chip, the chip is translated by 3-4mm; then, the operating handle is vertically lifted up, and the metallization of the back surface of the chip is completed;
after the first step, executing the second step, firstly, taking a servo amplifier and/or a gauge outfit assembly as a load, wherein the input end of the servo amplifier and/or the gauge outfit assembly is electrically connected with the output end of a switching power supply through a current protection circuit; then, a reference voltage is set through a zener diode 1IC1, the amplification factor of the electric potential acquired by the first amplifier 1A1 is set through resistors 1R6 and 1R12, the protection delay time is set through a resistor 1R15 and a capacitor 1C6, and the switching frequency of the Mos tube 1Q2 is set through a diode 1D1, a capacitor 1C5 and a resistor 1R 10;
step three, when a switching power supply is started, the output current is higher than the set current, the output loop of a power supply module is over-current, the sampling resistor 1R2 is used for comparing the acquired potential with the reference potential after amplifying the potential by the first amplifier 1A1, the potential of the same-phase end is increased by the delay function of the resistor 1R15 and the capacitor 1C6, when the potential of the same-phase end is higher than the potential of the opposite-phase end, the second comparator 1A2 outputs a high-level driving triode 1Q3, the grid electrode of the MOS tube 1Q2 is conducted to the ground, the drain electrode and the source electrode of the MOS tube are turned off, and the output of the power supply module is disconnected from a load; then, when the power supply module works normally, the potential of the same-phase end of the second comparator 1A2 can rise and speed and load work because of the delay function of the same-phase end;
when the load works, the fourth step is executed,
firstly, a double-circuit voltage stabilizing circuit supplies power to a front-end conversion circuit U1, a bias circuit performs circuit bias, a triangular wave generator outputs triangular waves, and integration is performed through a current integrator; then, the integrated signal is amplified by an operational amplifier and then output to a transconductance compensation amplifier U4, and the transconductance compensation amplifier U4 converts the voltage applied to the input end of the circuit into output current; secondly, the transconductance compensation amplifier U4 is regulated through a feedback resistance-capacitance network, so that the transconductance compensation amplifier U4, the torque sensor L1 and the transconductance compensation amplifier U4 stagger the lowest point of a current signal, and meanwhile, the feedback resistance-capacitance network regulates to transmit feedback information to the operational amplifier, and meanwhile, a second path of feedback information is output to the torque sensor L1; and the generated feedback signal is fed back and input to the triangular wave generator through the differential capacitance component by the torque sensor L1, so that closed-loop control of the torque sensor L1 is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911311893.0A CN111024982B (en) | 2019-12-18 | 2019-12-18 | Servo circuit of high-temperature quartz flexible accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911311893.0A CN111024982B (en) | 2019-12-18 | 2019-12-18 | Servo circuit of high-temperature quartz flexible accelerometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111024982A CN111024982A (en) | 2020-04-17 |
| CN111024982B true CN111024982B (en) | 2024-01-30 |
Family
ID=70209751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911311893.0A Active CN111024982B (en) | 2019-12-18 | 2019-12-18 | Servo circuit of high-temperature quartz flexible accelerometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111024982B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896773B (en) * | 2020-07-31 | 2022-08-02 | 西安微电子技术研究所 | Triaxial quartz flexible accelerometer assembly and measuring method thereof |
| CN111983259B (en) * | 2020-08-24 | 2022-03-01 | 西安微电子技术研究所 | Servo control circuit, quartz flexible accelerometer based on servo control circuit and manufacturing method |
| CN117870656A (en) * | 2023-12-25 | 2024-04-12 | 贵州航天控制技术有限公司 | Lightweight optical fiber gyro inertial measurement system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10332738A (en) * | 1997-05-29 | 1998-12-18 | Japan Aviation Electron Ind Ltd | Electrostatic torquer type accelerometer |
| US6073490A (en) * | 1994-06-27 | 2000-06-13 | Sergy Feodosievich Konovalov | Servo accelerometer |
| CN101266260A (en) * | 2008-04-03 | 2008-09-17 | 中国航天时代电子公司第七七一研究所 | Rock quartz accelerometer servo-circuit |
| CN201749128U (en) * | 2010-08-18 | 2011-02-16 | 中国电子科技集团公司第四十三研究所 | Servo circuit of quartz flexible accelerometer |
| CN103675317A (en) * | 2013-11-28 | 2014-03-26 | 航天科工惯性技术有限公司 | Low-power-consumption servo circuit for quartz flexure accelerometer |
| CN205139170U (en) * | 2015-11-06 | 2016-04-06 | 青岛航天半导体研究所有限公司 | Accelerometer servo circuit |
| CN209656731U (en) * | 2019-04-23 | 2019-11-19 | 青岛航天半导体研究所有限公司 | A kind of quartz flexible accelerometer numeral output servo circuit |
| CN110579626A (en) * | 2019-10-22 | 2019-12-17 | 西安微电子技术研究所 | Miniature metal full-sealed quartz flexible accelerometer servo circuit and processing method thereof |
-
2019
- 2019-12-18 CN CN201911311893.0A patent/CN111024982B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6073490A (en) * | 1994-06-27 | 2000-06-13 | Sergy Feodosievich Konovalov | Servo accelerometer |
| JPH10332738A (en) * | 1997-05-29 | 1998-12-18 | Japan Aviation Electron Ind Ltd | Electrostatic torquer type accelerometer |
| CN101266260A (en) * | 2008-04-03 | 2008-09-17 | 中国航天时代电子公司第七七一研究所 | Rock quartz accelerometer servo-circuit |
| CN201749128U (en) * | 2010-08-18 | 2011-02-16 | 中国电子科技集团公司第四十三研究所 | Servo circuit of quartz flexible accelerometer |
| CN103675317A (en) * | 2013-11-28 | 2014-03-26 | 航天科工惯性技术有限公司 | Low-power-consumption servo circuit for quartz flexure accelerometer |
| CN205139170U (en) * | 2015-11-06 | 2016-04-06 | 青岛航天半导体研究所有限公司 | Accelerometer servo circuit |
| CN209656731U (en) * | 2019-04-23 | 2019-11-19 | 青岛航天半导体研究所有限公司 | A kind of quartz flexible accelerometer numeral output servo circuit |
| CN110579626A (en) * | 2019-10-22 | 2019-12-17 | 西安微电子技术研究所 | Miniature metal full-sealed quartz flexible accelerometer servo circuit and processing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111024982A (en) | 2020-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111024982B (en) | Servo circuit of high-temperature quartz flexible accelerometer | |
| CN111024983B (en) | Realization method of high-temperature quartz flexible accelerometer servo circuit | |
| Lu et al. | A fully-integrated low-dropout regulator with full-spectrum power supply rejection | |
| Linvill | Lumped models of transistors and diodes | |
| CN1316619C (en) | Internal power supply for IC with temp. compensating pedestal generator | |
| CN103309389B (en) | Low-pass filter circuit and voltage regulator | |
| CN103308075B (en) | Current output-type linear hall-effect sensor | |
| CN105242734B (en) | A kind of high power LD O circuit without external electric capacity | |
| CN103677044B (en) | Low power fast settling voltage reference circuit | |
| CN104199509A (en) | Temperature compensating circuit for bandgap reference | |
| Osadchuk et al. | The microelectronic transducers of pressure with the frequency output | |
| CN109917846A (en) | Voltage regulator circuit, semiconductor device and power supply device | |
| CN202720256U (en) | Electronic circuit for high-precision closed-loop type hall current sensor | |
| CN204576336U (en) | Reference voltage source circuit | |
| JP2007067824A (en) | Variable gain amplifier and ac power supply using the same | |
| CN2884693Y (en) | Hall switching circuit and its retarding comparator circuit | |
| CN101320279A (en) | Current generator | |
| CN205320045U (en) | Ultra -low power consumption clock circuit with high stability | |
| CN203178843U (en) | Temperature compensation system | |
| CN104660037A (en) | Low ripple power supply for high precision data acquisition system | |
| Saraf et al. | Local measurement of surface states energy distribution in semiconductors using Kelvin probe force microscope | |
| CN203657927U (en) | Precise adjustable thermocouple cold end temperature compensation instrument | |
| CN217506427U (en) | Temperature drift compensation circuit and electronic equipment | |
| Kok | A Novel Study on a 300° C, High Performance LDO Regulator Using Silicon-On-Insulator Process for Extreme Drill Bit Application | |
| Adams et al. | Temperature sensitivity of frequency of integrated oscillators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |