CN111010127B - 一种薄膜体声波谐振器及其制备方法 - Google Patents
一种薄膜体声波谐振器及其制备方法 Download PDFInfo
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- CN111010127B CN111010127B CN201911333656.4A CN201911333656A CN111010127B CN 111010127 B CN111010127 B CN 111010127B CN 201911333656 A CN201911333656 A CN 201911333656A CN 111010127 B CN111010127 B CN 111010127B
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- piezoelectric material
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- piezoelectric
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- 238000002360 preparation method Methods 0.000 title abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 abstract description 2
- 239000000725 suspension Substances 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
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Priority Applications (1)
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CN201911333656.4A CN111010127B (zh) | 2019-12-23 | 2019-12-23 | 一种薄膜体声波谐振器及其制备方法 |
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CN201911333656.4A CN111010127B (zh) | 2019-12-23 | 2019-12-23 | 一种薄膜体声波谐振器及其制备方法 |
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CN111010127A CN111010127A (zh) | 2020-04-14 |
CN111010127B true CN111010127B (zh) | 2021-07-02 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113938108A (zh) * | 2020-07-14 | 2022-01-14 | 中芯集成电路(宁波)有限公司 | 薄膜体声波谐振器及其制造方法 |
CN112260659B (zh) * | 2020-10-26 | 2022-02-01 | 武汉大学 | 一种高q值薄膜体声波谐振器及其制备方法 |
CN113364423B (zh) * | 2021-05-27 | 2023-11-10 | 广州乐仪投资有限公司 | 压电mems谐振器及其形成方法、电子设备 |
CN113810016B (zh) * | 2021-09-23 | 2023-07-11 | 武汉敏声新技术有限公司 | 一种体声波谐振器和体声波滤波器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110166012A (zh) * | 2019-05-15 | 2019-08-23 | 上海科技大学 | 二维耦合的射频压电谐振器及其制备方法 |
Family Cites Families (7)
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JP3538710B2 (ja) * | 2000-06-27 | 2004-06-14 | 株式会社村田製作所 | 圧電フィルタ及びその製造方法 |
JP4192794B2 (ja) * | 2004-01-26 | 2008-12-10 | セイコーエプソン株式会社 | 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振器、及び電子機器 |
JP5279068B2 (ja) * | 2008-02-15 | 2013-09-04 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
CN104202010B (zh) * | 2014-08-28 | 2017-05-03 | 中国工程物理研究院电子工程研究所 | 一种镂空空腔型薄膜体声波谐振器及其制作方法 |
CN106353702B (zh) * | 2016-09-14 | 2018-11-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | 一种基于面内伸缩模态谐振器的mems磁场传感器及制备方法 |
US11121691B2 (en) * | 2016-12-29 | 2021-09-14 | Intel Corporation | Resonator structure encapsulation |
CN109474252B (zh) * | 2018-10-29 | 2020-12-01 | 武汉大学 | 可提高q值的空腔薄膜体声波谐振器及其制备方法 |
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CN110166012A (zh) * | 2019-05-15 | 2019-08-23 | 上海科技大学 | 二维耦合的射频压电谐振器及其制备方法 |
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Effective date of registration: 20220408 Address after: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee after: Ningbo Huazhang enterprise management partnership (L.P.) Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Patentee before: WUHAN University |
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Effective date of registration: 20220824 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee before: Ningbo Huazhang enterprise management partnership (L.P.) |