CN109474252B - 可提高q值的空腔薄膜体声波谐振器及其制备方法 - Google Patents
可提高q值的空腔薄膜体声波谐振器及其制备方法 Download PDFInfo
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- CN109474252B CN109474252B CN201811271504.1A CN201811271504A CN109474252B CN 109474252 B CN109474252 B CN 109474252B CN 201811271504 A CN201811271504 A CN 201811271504A CN 109474252 B CN109474252 B CN 109474252B
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201811271504.1A CN109474252B (zh) | 2018-10-29 | 2018-10-29 | 可提高q值的空腔薄膜体声波谐振器及其制备方法 |
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CN201811271504.1A CN109474252B (zh) | 2018-10-29 | 2018-10-29 | 可提高q值的空腔薄膜体声波谐振器及其制备方法 |
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CN109474252A CN109474252A (zh) | 2019-03-15 |
CN109474252B true CN109474252B (zh) | 2020-12-01 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110113022B (zh) * | 2019-05-13 | 2023-09-26 | 南方科技大学 | 一种薄膜体声波谐振器及其制作方法 |
WO2021036653A1 (zh) | 2019-08-28 | 2021-03-04 | 武汉大学 | 一种高灵敏度压电式麦克风 |
CN110602616B (zh) * | 2019-08-28 | 2021-02-19 | 武汉敏声新技术有限公司 | 一种高灵敏度mems压电式麦克风 |
CN110417375A (zh) * | 2019-08-30 | 2019-11-05 | 迈感微电子(上海)有限公司 | 一种体声波谐振器 |
CN110784188B (zh) * | 2019-10-17 | 2022-09-09 | 武汉敏声新技术有限公司 | 谐振器及其制备方法 |
CN112994639A (zh) * | 2019-12-16 | 2021-06-18 | 中芯集成电路(宁波)有限公司 | 一种薄膜压电声波谐振器及其制造方法及滤波器 |
CN111092604B (zh) * | 2019-12-16 | 2021-07-20 | 见闻录(浙江)半导体有限公司 | 一种体声波谐振器的空腔结构及制造方法 |
CN111010127B (zh) * | 2019-12-23 | 2021-07-02 | 武汉大学 | 一种薄膜体声波谐振器及其制备方法 |
CN111224637A (zh) * | 2020-01-21 | 2020-06-02 | 武汉大学 | 一种带有新型释放结构的谐振器及其制备方法 |
CN111262542B (zh) * | 2020-02-27 | 2022-03-25 | 见闻录(浙江)半导体有限公司 | 一种具有散热结构的体声波谐振器及制造工艺 |
CN111654259A (zh) * | 2020-05-13 | 2020-09-11 | 深圳市信维通信股份有限公司 | 一种体声波谐振装置、一种滤波装置及一种射频前端装置 |
CN112087216B (zh) * | 2020-08-03 | 2022-02-22 | 诺思(天津)微***有限责任公司 | 具有声学孔的体声波谐振器及组件、滤波器及电子设备 |
WO2022192666A1 (en) * | 2021-03-12 | 2022-09-15 | Akash Systems, Inc. | Substrate features in thermally conductive materials |
CN114389562A (zh) * | 2021-12-29 | 2022-04-22 | 河源市艾佛光通科技有限公司 | 一种可提升功率容量的体声波谐振器及其制备方法 |
CN116248062B (zh) * | 2023-01-10 | 2024-04-02 | 武汉敏声新技术有限公司 | 一种体声波谐振器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104202010A (zh) * | 2014-08-28 | 2014-12-10 | 中国工程物理研究院电子工程研究所 | 一种镂空空腔型薄膜体声波谐振器及其制作方法 |
CN104767500A (zh) * | 2014-01-03 | 2015-07-08 | 李国强 | 空腔型薄膜体声波谐振器及其制备方法 |
CN107528561A (zh) * | 2017-09-12 | 2017-12-29 | 电子科技大学 | 一种空腔型薄膜体声波谐振器及其制备方法 |
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- 2018-10-29 CN CN201811271504.1A patent/CN109474252B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104767500A (zh) * | 2014-01-03 | 2015-07-08 | 李国强 | 空腔型薄膜体声波谐振器及其制备方法 |
CN104202010A (zh) * | 2014-08-28 | 2014-12-10 | 中国工程物理研究院电子工程研究所 | 一种镂空空腔型薄膜体声波谐振器及其制作方法 |
CN107528561A (zh) * | 2017-09-12 | 2017-12-29 | 电子科技大学 | 一种空腔型薄膜体声波谐振器及其制备方法 |
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Effective date of registration: 20220406 Address after: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee after: Ningbo Huazhang enterprise management partnership (L.P.) Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Patentee before: WUHAN University |
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Effective date of registration: 20220823 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Patentee before: Ningbo Huazhang enterprise management partnership (L.P.) |