CN110993619A - 阵列基板及其制备方法和显示装置 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 96
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- 229910052733 gallium Inorganic materials 0.000 claims description 5
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
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Abstract
本发明公开了一种阵列基板及其制备方法和显示装置,该方法包括:提供一衬底基板;在衬底基板上形成导电材料薄膜;在导电材料薄膜背离衬底基板的一侧形成第一光刻胶层;第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于第二覆盖部分两侧且与第二覆盖部分相连的第三覆盖部分,第三覆盖部分的厚度小于第二覆盖部分的厚度;对导电材料薄膜的未被第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案;对第一光刻胶层进行灰化处理,以去除第三覆盖部分,获得第二光刻胶层;对第一刻蚀图案的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极和信号线。通过本发明提高了显示产品的显示质量。
Description
技术领域
本发明涉及显示技术领域,具体地,涉及一种阵列基板的制备方法、阵列基板以及显示装置。
背景技术
目前,顶栅型薄膜晶体管(Thin-Film Transistor,简称TFT)具有短沟道的特点,所以其开态电流得以有效提升,因而可以显著提升显示效果并且能有效降低功耗。
在实际工艺过程中,需要在完成栅极层曝光和刻蚀构图工艺后,采用自对准工艺对栅极层下方的栅极绝缘层进行刻蚀然后紧接着进行有源层的导体化工艺,为了防止导体化过程中氦等离子体在有源层沟道内的横向扩散和上方的栅极金属原子通过有源层两端向沟道内扩散,工艺上采用将栅极刻蚀后的线宽与光刻胶的线宽差异做大,这样光刻胶可以更好的保护栅极图形下方左右两侧的栅极绝缘层免于刻蚀,形成一定宽度的层位,从而对下方的有源层的导体化工艺起到一定的保护限制作用,可以有效避免有源层的导体化过程中氦等离子体在有源层的沟道内的横向扩散和上方的栅极金属原子通过有源层的两端向沟道内扩散,从而确保TFT特性的稳定性。
但是随着显示产品逐渐向大尺寸和高像素密度(Pixels Per Inch,简称PPI)的发展,需要越来越密的金属布线密度,这就需要工艺上达到曝光形成的光刻胶的线宽尺寸与最终刻蚀后的线宽尺寸越接近越好,这样一方面可以增强导电能力,另一方面可以防止刻蚀过后线宽过窄导致断线高发。这与TFT的栅极刻蚀后的线宽与光刻胶的线宽差异做大存在一定的矛盾。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一,提出了一种阵列基板的制备方法,所述方法包括:
提供一衬底基板;
在所述衬底基板上形成导电材料薄膜;
在所述导电材料薄膜背离所述衬底基板的一侧形成第一光刻胶层;其中,所述第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于所述第二覆盖部分两侧且与所述第二覆盖部分相连的第三覆盖部分,所述第三覆盖部分的厚度小于所述第二覆盖部分的厚度;
对所述导电材料薄膜的未被所述第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案;
对所述第一光刻胶层进行灰化处理,以去除所述第三覆盖部分,获得第二光刻胶层;
对所述第一刻蚀图案的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得所述栅极和信号线。
优选地,所述在所述导电材料薄膜背离所述衬底基板的一侧形成第一光刻胶层,具体包括:
在所述导电材料薄膜背离所述衬底基板的一侧形成光刻胶薄膜;
采用半色调掩膜板对所述光刻胶薄膜进行曝光;
对曝光后的所述光刻胶薄膜进行显影,以得到所述第一光刻胶层。
优选地,所述衬底基板上形成导电材料薄膜的步骤之前,还包括:
在所述衬底基板上依次形成遮光层、缓冲层、有源层和用于制作栅极绝缘层的薄膜。
优选地,在所述对所述第一刻蚀图案的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得所述栅极和信号线的步骤之后,还包括:
对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形。
优选地,在所述对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形的步骤之后,还包括:
对所述有源层未被所述栅极绝缘层覆盖的区域进行导体化处理;
剥离剩余的所述第二光刻胶层。
优选地,在所述对所述有源层未被所述栅极绝缘层覆盖的区域进行导体化处理的步骤之后,还包括:
在所述衬底基板上依次形成层间介质层、源极和漏极。
优选地,在所述对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形的步骤中,采用自对准工艺对所述用于制作栅极绝缘层的薄膜进行刻蚀。
优选地,所述有源层采用的材料包括氧化铟镓锌。
本发明还提供了一种阵列基板,所述阵列基板采用本申请中所述的阵列基板的制备方法制备而成。
本发明还提供了一种显示装置,包括本申请中所述的阵列基板。
本发明具有以下有益效果:
本发明公开了一种阵列基板及其制备方法和显示装置,在衬底基板上形成导电材料薄膜,在导电材料薄膜背离衬底基板的一侧形成第一光刻胶层,第一光刻胶层包括第一覆盖部分、第二覆盖部分以及位于第二覆盖部分两侧且与第二覆盖部分相连的第三覆盖部分,第一覆盖部分用于制作栅极,第二覆盖部分用于制作信号线,第三覆盖部分的厚度小于第二覆盖部分的厚度;对导电材料薄膜的未被第一光刻胶层覆盖的部分进行刻蚀获得第一刻蚀图案;对第一光刻胶层进行灰化处理,以去除第三覆盖部分,获得第二光刻胶层;对第一刻蚀图案的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极和信号线。相对于现有技术,本发明的技术方案通过对导电材料薄膜的第一覆盖部分两侧的区域进行两次刻蚀,而对导电材料薄膜的第二覆盖部分两侧的区域进行一次刻蚀,可以使栅极刻蚀后的线宽与光刻胶的线宽差异较大,而使刻蚀后的信号线的线宽与光刻胶的线宽差异较小,可有效避免有源层的导体化过程中氦等离子体在有源层的沟道内的横向扩散和上方的栅金属原子通过有源层的两端向沟道扩散,还可以防止信号线刻蚀后线宽过窄导致的断线高发,即本技术方案可以同时满足薄膜晶体管的特性和信号线导电性的需求,提高了显示产品的显示质量。
附图说明
图1为本发明一个实施例提供的阵列基板的制备方法的流程图;
图2为本发明另一个实施例提供的阵列基板的制备方法的流程图;
图3为本发明第三个实施例提供的阵列基板的制备方法的流程图;
图4a~图4n为采用图3所提供的制备方法制备阵列基板的中间结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图对本发明提供的阵列基板及其制备方法和显示装置进行详细描述。
如图1所示,为本发明一个实施例提供的阵列基板的制备方法的流程图,在图1中,阵列基板的制备方法包括:
步骤S101:提供一衬底基板。
步骤S102:在衬底基板上形成导电材料薄膜。
步骤S103:在导电材料薄膜背离衬底基板的一侧形成第一光刻胶层,其中,第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于第二覆盖部分两侧且与第二覆盖部分相连的第三覆盖部分,第三覆盖部分的厚度小于第二覆盖部分的厚度。
步骤S104:对导电材料薄膜的未被第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案。
步骤S105:对第一光刻胶层进行灰化处理,以去除第三覆盖部分,获得第二光刻胶层。
步骤S106:对第一刻蚀图案的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极和信号线。
本实施例提供的阵列基板的制备方法,通过对导电材料薄膜的第一覆盖部分两侧的区域进行两次刻蚀,而对导电材料薄膜的第二覆盖部分两侧的区域进行一次刻蚀,可以使刻蚀后栅极的线宽与光刻胶的线宽差异较大,而刻蚀后的信号线的线宽与光刻胶的线宽差异较小,可以有效防止信号线刻蚀后线宽过窄导致的断线高发,并且增强了信号线的导电能力,提高了显示产品的显示质量。
图2为本发明另一个实施例提供的阵列基板的制备方法的流程图,图2所示实施例中,阵列基板的制备方法包括:
步骤S201:提供一衬底基板。
步骤S202:在衬底基板上依次形成遮光层、缓冲层、有源层和用于制作栅极绝缘层的薄膜。
步骤S203:在用于制作栅极绝缘层的薄膜背离衬底基板的一侧形成导电材料薄膜。
步骤S204:在导电材料薄膜背离衬底基板的一侧形成光刻胶薄膜。
步骤S205:采用半色调掩膜板对光刻胶薄膜进行曝光。
步骤S206:对曝光后的光刻胶薄膜进行显影,以得到第一光刻胶层,其中,第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于第二覆盖部分两侧且与第二覆盖部分相连的第三覆盖部分,第三覆盖部分的厚度小于第二覆盖部分的厚度。
步骤S207:对导电材料薄膜的未被第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案。
步骤S208:对第一光刻胶层进行灰化处理,以去除第三覆盖部分,获得第二光刻胶层。
步骤S209:对第一刻蚀图案的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极和信号线。
本发明实施例提供的阵列基板的制备方法,采用半色调掩膜板对光刻胶薄膜进行曝光,可以将光刻胶薄膜不完全曝光,半透膜部分按所需要钝化层的高度差来决定光线透过的多少。相对于普通的掩膜板,节省了生产工序,为显示产品厂商带来了很大收益,降低了生产成本,缩短了生产周期,提高了生产效率,简化了生产流程。
图3为本发明第三个实施例提供的阵列基板的制备方法的流程图,图4a~图4n为采用图3所提供的制备方法制备阵列基板的中间结构示意图,图3至图4n所示的实施例中,阵列基板的制备方法包括:
步骤S301:提供一衬底基板。
参见图4a所示,衬底基板1所采用的材料可以是玻璃,以玻璃作为衬底基板的成本低,衬底基板在低于500C的低温过程中制造,因此可以采用大面积、廉价的平板玻璃作衬底容易大面积化。
步骤S302:在衬底基板上依次形成遮光层、缓冲层、有源层和用于制作栅极绝缘层的薄膜。
参见图4b所示,可以利用现有的构图工艺,在衬底基板1一侧形成遮光层2。其中,遮光层2的材料为金属遮光材料,该金属遮光材料包括:Mo或Al/Mo叠层金属,遮光层2完全覆盖后续待形成薄膜晶体管的区域。本实施例中,使用遮光层2可以达到遮光与电连接的目的。
在制备完遮光层2后,在遮光层2背向衬底基板1的一侧形成一层整层铺设的缓冲层3,缓冲层3可对遮光层提供保护,其中,缓冲层3的材料包括氧化硅。
参见图4b所示,首先在缓冲层3背向衬底基板1的一侧形成有源层材料薄膜;可选地,有源层材料薄膜的材料为氧化物半导体材料。然后,对有源层材料薄膜进行一次构图工艺,以得到有源层4。
具体地,步骤S302中,有源层4采用的材料包括氧化铟镓锌。氧化铟镓锌是一种新型半导体材料,有着比非晶硅更高的电子迁移率。氧化铟镓锌用在新一代高性能薄膜晶体管中作为沟道材料,从而提高显示面板分辨率,并使得大屏幕OLED(Organic Light-Emitting Diode,有机发光二极管)电视成为可能。
需要说明的是,本发明中的构图工艺通常包括光刻胶涂敷、曝光、显影、刻蚀、光刻胶剥离等工艺。
参见图4b所示,在有源层4背向衬底基板1的一侧形成用于制作栅极绝缘层的薄膜5,该用于制作栅极绝缘层的薄膜5可以制作栅极绝缘层51。
步骤S303:在用于制作栅极绝缘层的薄膜背离衬底基板的一侧形成导电材料薄膜。
参见图4c所示,在用于制作栅极绝缘层的薄膜5背向衬底基板1的一侧形成导电材料薄膜6,该导电材料薄膜6可用于制作栅极62以及信号线63。
信号线包括TFT管走线、充当电源线和传感器的走线。
步骤S304:在导电材料薄膜背离衬底基板的一侧形成光刻胶薄膜。
参见图4d所示,在导电材料薄膜6背离衬底基板1的一侧形成光刻胶薄膜7。
步骤S305:采用半色调掩膜板对光刻胶薄膜进行曝光。
参见图4e所示,半色调掩膜板8包括:完全透光区81、遮光区82以及半透光区83。遮光区82至少有两块,两块遮光区82分别与光刻胶薄膜7上用于制作栅极的区域以及用于制作信号线的区域相对应,半透光区83至少有两块,两块半透光区83分别位于与用于制作信号线的区域相对应的遮光区82的两侧。
步骤S306:对曝光后的光刻胶薄膜进行显影,以得到第一光刻胶层,其中,第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于第二覆盖部分两侧的第三覆盖部分,第三覆盖部分的厚度小于第二覆盖部分的厚度。
参见图4f所示,第一光刻胶层71包括用于制作栅极的第一覆盖部分711、用于制作信号线的第二覆盖部分712和位于第二覆盖部分712两侧且与第二覆盖部分712相连的第三覆盖部分713,第三覆盖部分713的厚度小于第二覆盖部分712的厚度。本实施例中,第三覆盖部分的厚度小于第二覆盖部分的厚度,可以在后续对第三覆盖部分灰化处理时,在保留第二覆盖部分的同时便于对第三覆盖部分进行去除。
步骤S307:对导电材料薄膜的未被第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案。
参见图4g所示,对导电材料薄膜6的未被第一光刻胶层71覆盖的部分进行刻蚀后,得到第一刻蚀图案61。第一刻蚀图案61具有两部分,一部分对应导电材料薄膜6上制作栅极的区域,另一部分对应导电材料薄膜6上制作信号线的区域。
步骤S308:对第一光刻胶层进行灰化处理,以去除第三覆盖部分,获得第二光刻胶层。
参见图4h所示,对第一光刻胶层71进行灰化处理,以去除第三覆盖部分713,获得第二光刻胶层72。第二光刻胶层72相对于第一光刻胶层71缺少了第三覆盖部分。
步骤S309:对第一刻蚀图案的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极和信号线。
参见图4i所示,为对第一刻蚀图案61的未被第二光刻胶层72覆盖的部分进行刻蚀后得到的栅极63和信号线64。
步骤S310:对用于制作栅极绝缘层的薄膜的未被第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形。
具体地,步骤S310中,可以采用自对准工艺对用于制作栅极绝缘层的薄膜进行刻蚀。该自对准工艺用微米级线宽的第二光刻胶层作掩模,再对用于制作栅极绝缘层的薄膜5进行干刻,以实现第二光刻胶层72与栅极绝缘层51的自对准。
参见图4j所示,为对用于制作栅极绝缘层的薄膜5的未被第二光刻胶层72覆盖的部分进行刻蚀后,得到的栅极绝缘层51的图形。
步骤S311:对有源层未被栅极绝缘层覆盖的区域进行导体化处理。
参见图4k所示,以有源层4上未被栅极绝缘层51覆盖的部分41进行等离子体注入,使得该部分完成导体化处理。
此时,有源层4上未被栅极绝缘层51覆盖的部分41作为导体区,以供后续与源极、漏极进行连接;有源层4上被栅极绝缘层51覆盖的部分42作为沟道区。
本实施例的阵列基板的制备方法,采用将栅极63刻蚀后的线宽与光刻胶薄膜7的线宽差异做大,并采用自对准工艺对下方的栅极绝缘层51进行刻蚀后进行有源层4的导体化工艺,可以防止导体化过程中等离子体在有源层4沟道区内的横向扩散和上方的栅极63的金属原子通过有源层4两端向沟道区内扩散。
步骤S312:剥离剩余的第二光刻胶层。
参见图4l所示,为剥离第二光刻胶层72后的图形。
步骤S313:在衬底基板上依次形成层间介质层、源极和漏极。
参见图4m所示,首先在栅极63背向衬底基板1的一侧形成层间介质层材料薄膜;然后对层间介质层材料薄膜进行一次构图工艺,以得到层间介质层9的图形,然后再对层间介质层9进行一次构图工艺,在层间介质层9上形成过渡孔9g。
参见图4n所示,再次对层间介质层9进行一次构图工艺,以在层间介质层9上形成第一过孔9a、第二过孔9b和第三过孔9c,第三过孔9c是在过渡孔9g的基础上进行该次构图工艺得到的,且第三过孔9c依次穿过层间介质层9、缓冲层3且与遮光层2相通。
制作源极和漏极时,首先在层间介质层9背向衬底基板1的一侧形成源漏金属薄膜;然后对源漏金属薄膜进行一次构图工艺,以得到源极10和漏极11的图形。其中,源极10通过对应的第一过孔9a与有源层4连接,漏极11通过第二过孔9b与有源层4连接,漏极11还依次通过过渡孔9g、第三过孔9b并与有源层4连接。
采用本发明实施例得到的阵列基板包括顶栅型TFT,顶栅型TFT具有短沟道的特点,所以其开态电流得以有效提升,因而可以显著提升显示效果并且能有效降低功耗。而且顶栅型TFT的栅极与源漏极重叠面积小,因而产生的寄生电容较小。
进一步,为了保护源极10和漏极11,还可以在源极10和漏极11背向衬底基板1的一侧形成钝化层(图中未示),具体地,首先在源极10和漏极11背向衬底基板1的一侧形成钝化层材料薄膜;然后对钝化层材料薄膜进行一次构图工艺,以得到钝化层的图形。
本发明实施例提供的阵列基板的制备方法,一方面可以有效避免有源层的导体化过程中氦等离子体在有源层的沟道内的横向扩散和上方的栅极金属原子通过有源层的两端向沟道内扩散,从而确保TFT特性的稳定性;另一方面,可以增强信号线的导电能力,并且可以防止刻蚀过后信号线宽过窄导致的断线高发。
本发明还提供了一种阵列基板,该阵列基板采用上述任意一实施例中的阵列基板的制备方法制备而成,对于该阵列基板的具体制备过程的描述可参见上述实施例中的相应内容,此处不再赘述。
本发明还提供了一种显示装置,该显示装置包括阵列基板,该阵列基板采用上述实施例中的阵列基板,对于该显示装置的具体描述可参见上述实施例中的相应内容,此处不再赘述。
Claims (10)
1.一种阵列基板的制备方法,其特征在于,所述方法包括:
提供一衬底基板;
在所述衬底基板上形成导电材料薄膜;
在所述导电材料薄膜背离所述衬底基板的一侧形成第一光刻胶层;其中,所述第一光刻胶层包括用于制作栅极的第一覆盖部分、用于制作信号线的第二覆盖部分和位于所述第二覆盖部分两侧且与所述第二覆盖部分相连的第三覆盖部分,所述第三覆盖部分的厚度小于所述第二覆盖部分的厚度;
对所述导电材料薄膜的未被所述第一光刻胶层覆盖的部分进行刻蚀,以获得第一刻蚀图案;
对所述第一光刻胶层进行灰化处理,以去除所述第三覆盖部分,获得第二光刻胶层;
对所述第一刻蚀图案的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得所述栅极和信号线。
2.根据权利要求1所述的阵列基板的制备方法,其特征在于,所述在所述导电材料薄膜背离所述衬底基板的一侧形成第一光刻胶层,具体包括:
在所述导电材料薄膜背离所述衬底基板的一侧形成光刻胶薄膜;
采用半色调掩膜板对所述光刻胶薄膜进行曝光;
对曝光后的所述光刻胶薄膜进行显影,以得到所述第一光刻胶层。
3.根据权利要求1所述的阵列基板的制备方法,其特征在于,所述衬底基板上形成导电材料薄膜的步骤之前,还包括:
在所述衬底基板上依次形成遮光层、缓冲层、有源层和用于制作栅极绝缘层的薄膜。
4.根据权利要求3所述的阵列基板的制备方法,其特征在于,在所述对所述第一刻蚀图案的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得所述栅极和信号线的步骤之后,还包括:
对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形。
5.根据权利要求4所述的阵列基板的制备方法,其特征在于,在所述对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形的步骤之后,还包括:
对所述有源层未被所述栅极绝缘层覆盖的区域进行导体化处理;
剥离剩余的所述第二光刻胶层。
6.根据权利要求5所述的阵列基板的制备方法,其特征在于,在所述对所述有源层未被所述栅极绝缘层覆盖的区域进行导体化处理的步骤之后,还包括:
在所述衬底基板上依次形成层间介质层、源极和漏极。
7.根据权利要求4所述的阵列基板的制备方法,其特征在于,在所述对所述用于制作栅极绝缘层的薄膜的未被所述第二光刻胶层覆盖的部分进行刻蚀,以获得栅极绝缘层的图形的步骤中,采用自对准工艺对所述用于制作栅极绝缘层的薄膜进行刻蚀。
8.根据权利要求3-5任一项所述的阵列基板的制备方法,其特征在于,所述有源层采用的材料包括氧化铟镓锌。
9.一种阵列基板,其特征在于,所述阵列基板采用权利要求1-8任一项所述的阵列基板的制备方法制备而成。
10.一种显示装置,其特征在于,包括权利要求9所述的阵列基板。
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