CN110938871B - Polycrystalline silicon ingot casting equipment and polycrystalline silicon ingot casting method - Google Patents

Polycrystalline silicon ingot casting equipment and polycrystalline silicon ingot casting method Download PDF

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Publication number
CN110938871B
CN110938871B CN201911406321.0A CN201911406321A CN110938871B CN 110938871 B CN110938871 B CN 110938871B CN 201911406321 A CN201911406321 A CN 201911406321A CN 110938871 B CN110938871 B CN 110938871B
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China
Prior art keywords
light
crucible
detection device
ingot casting
silicon nitride
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CN201911406321.0A
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CN110938871A (en
Inventor
周华
孔令珂
陶能松
黄福龙
张学日
吴纯
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Sinoma Jiangsu Solar Energy New Material Co ltd
Jiangxi Sinoma New Material Co ltd
Sinoma Advanced Materials Co Ltd
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Sinoma Jiangsu Solar Energy New Material Co ltd
Jiangxi Sinoma New Material Co ltd
Sinoma Advanced Materials Co Ltd
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Priority to CN201911406321.0A priority Critical patent/CN110938871B/en
Publication of CN110938871A publication Critical patent/CN110938871A/en
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Silicon Compounds (AREA)

Abstract

The application provides polysilicon ingot casting equipment and a polysilicon ingot casting method. The polycrystalline silicon ingot casting equipment comprises a crucible, a light source and a light ray detection device. The crucible is provided with a containing cavity, and a silicon nitride coating is additionally arranged on the inner wall of the containing cavity. The light source and the light detection device are respectively arranged at the inner side and the outer side of the accommodating cavity or respectively arranged at the outer side and the inner side. The light source emits initial light towards the silicon nitride coating, the initial light passes through the silicon nitride coating to form detection light, and the detection light is transmitted to the light detection device. The light detection device receives detection light and judges whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light. The polysilicon ingot casting equipment and the polysilicon ingot casting method have higher precision for detecting whether the thickness of the silicon nitride coating meets the preset thickness.

Description

Polycrystalline silicon ingot casting equipment and polycrystalline silicon ingot casting method
Technical Field
The application relates to the field of polycrystalline silicon ingot casting technology, in particular to polycrystalline silicon ingot casting equipment and a polycrystalline silicon ingot casting method.
Background
In the polysilicon ingot casting process, a layer of silicon nitride coating reaching a specified thickness is often formed on the inner wall of a crucible in polysilicon ingot casting equipment, and the quality of the polysilicon ingot casting ingot is improved through the isolation effect of the silicon nitride coating. However, the thickness of the silicon nitride coating cannot be detected by the existing polysilicon ingot casting equipment, and whether the thickness of the silicon nitride coating reaches the specified thickness can only be detected by visual inspection.
Disclosure of Invention
The invention provides a polysilicon ingot casting device and a polysilicon ingot casting method, which have higher accuracy for detecting whether the thickness of a silicon nitride coating meets the preset thickness.
The polycrystalline silicon ingot casting equipment comprises a crucible, a light source and a light ray detection device. The crucible is provided with a containing cavity, and a silicon nitride coating is additionally arranged on the inner wall of the containing cavity. The light source and the light detection device are respectively arranged at the inner side and the outer side of the accommodating cavity or respectively arranged at the outer side and the inner side. The light source emits initial light towards the silicon nitride coating, the initial light passes through the silicon nitride coating to form detection light, and the detection light is transmitted to the light detection device. The light detection device receives detection light and judges whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light. The light detection device is used for receiving detection light and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light, so that the accuracy of detecting whether the thickness of the silicon nitride coating meets the preset thickness is improved, and the efficiency of detecting whether the thickness of the silicon nitride coating meets the preset thickness is improved.
Further, the polysilicon ingot casting equipment comprises a body, wherein the body is provided with a containing groove, the containing groove contains the crucible, the light source and the light detection device, the light detection device is arranged in the containing cavity, and the light source is positioned outside the containing cavity and connected to the inner wall of the containing groove.
Further, the polycrystalline silicon ingot casting device further comprises a supporting frame, wherein the supporting frame is fixed in the accommodating groove, and the supporting frame supports the crucible.
Further, the polysilicon ingot casting equipment further comprises a sealing cover, wherein the sealing cover is connected with the body and seals the opening of the accommodating groove so as to prevent light from being transmitted into the accommodating groove through the opening of the accommodating groove.
Further, the sealing cover is provided with a crucible sealing cover, and the crucible sealing cover is connected with the crucible and seals the opening of the crucible so as to prevent light from being transmitted into the accommodating cavity through the opening of the accommodating cavity.
Further, the sealing cover further comprises a light source sealing cover connected with the crucible sealing cover, and the light source sealing cover is connected between the crucible and the body in a sealing manner so as to seal an opening between the crucible and the body.
Further, the light detection device is fixedly connected with one side, close to the inner wall of the accommodating groove, of the crucible sealing cover.
Further, the inner wall includes the diapire and with the lateral wall that the diapire links to each other, polycrystalline silicon ingot casting equipment includes slider, slider include slide base and with the fixed part that slide base links to each other, slide base sliding connection in crucible sealed cowling is close to one side of diapire, fixed part fixed connection light detection device, slide base can slide the side wall or slide away from the side wall, so as to drive light detection device slides the side wall or slide away from the side wall.
Further, the sliding device further comprises a telescopic part connected between the sliding base and the fixed part, and the telescopic part can extend along a direction close to the bottom wall or retract along a direction away from the bottom wall so as to drive the light detection device to slide towards the bottom wall or slide away from the bottom wall.
Further, the polycrystalline silicon ingot casting equipment further comprises a processor and a motor, the processor is electrically connected with the motor, the motor is connected with the sliding base and the telescopic part, the processor sends a control instruction to the motor, and the motor outputs torque to the sliding base and the telescopic part after receiving the control instruction so as to drive the sliding base to slide and drive the telescopic part to stretch out and draw back.
Further, the polycrystalline ingot casting equipment further comprises a distance detection device, the distance detection device is fixedly connected to the light detection device, the distance detection device is electrically connected with the processor, and the distance detection device is used for detecting distance values from the light detection device to the side wall and the bottom wall and transmitting the distance values to the processor so that the processor can send out the control instruction according to the distance values.
Further, the light source is slidably connected to the inner wall of the accommodating groove, the light detection device comprises a light sensor, the light source faces the light sensor, and the light source emits light towards the light sensor.
In another aspect, the present invention also provides a method for casting a polycrystalline silicon ingot, the method comprising:
Providing a crucible, a light source and a light detection device, wherein the crucible is provided with a containing cavity, and a silicon nitride coating is additionally arranged on the inner wall of the containing cavity;
the light source and the light ray detection device are respectively arranged at the inner side and the outer side of the accommodating cavity or respectively arranged at the outer side and the inner side;
controlling the light source to emit initial light towards the coating, wherein the initial light passes through the silicon nitride coating to form detection light, and the detection light is transmitted to the light detection device;
and controlling the light detection device to receive the detection light, and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light.
Further, after the step of controlling the light detection device to receive the detection light and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light, the polysilicon ingot casting method further comprises:
and when the thickness of the silicon nitride coating does not meet the preset thickness, spraying the silicon nitride coating on the inner wall of the crucible.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic perspective view of a polysilicon ingot casting apparatus according to an embodiment of the present application.
Fig. 2 is a cross-sectional view taken along line I-I in fig. 1.
Fig. 3 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I.
Fig. 4 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I.
Fig. 5 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I.
Fig. 6 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I.
Fig. 7 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I in another state.
Fig. 8 is a schematic diagram illustrating a method for forming a polycrystalline silicon ingot according to an embodiment of the present application.
Fig. 9 is a schematic diagram of a method for forming a polycrystalline silicon ingot according to another embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made with reference to the accompanying drawings of the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to fall within the scope of the present application.
Referring to fig. 1 to 2, fig. 1 is a schematic perspective view of a polysilicon ingot casting apparatus according to an embodiment of the application; fig. 2 is a cross-sectional view taken along line I-I in fig. 1. The polycrystalline silicon ingot casting equipment 1 is used for detecting whether the silicon nitride coating 12 attached to the inner wall of the crucible 10 in the polycrystalline silicon ingot casting equipment 1 meets the preset thickness. In this embodiment, the polysilicon ingot casting apparatus 1 includes a crucible 10, a light source 20, and a light detection device 30. The crucible 10 has a receiving chamber 11, and a silicon nitride coating layer 12 is attached to an inner wall of the receiving chamber 11 of the crucible 10. The light source 20 and the light detection device 30 are disposed inside and outside the housing chamber 11, respectively, or disposed outside and inside, respectively. The light source 20 emits an initial light toward the silicon nitride coating 12, and the initial light passes through the silicon nitride coating 12 to form a detection light, and the detection light is transmitted to the light detection device 30. The light detecting device 30 receives the detected light and determines whether the thickness of the silicon nitride coating 12 meets a preset thickness according to the detected light. The light detection device 30 receives the detection light and judges whether the thickness of the silicon nitride coating 12 meets the preset thickness according to the detection light, so that the accuracy of detecting whether the thickness of the silicon nitride coating 12 meets the preset thickness is improved, and the efficiency of detecting whether the thickness of the silicon nitride coating 12 meets the preset thickness is improved.
In this embodiment, the crucible 10 has a receiving cavity 11, and the receiving cavity 11 is used for loading the polysilicon ingot casting raw material during the polysilicon ingot casting process. The silicon nitride coating 12 is attached to the inner wall of the accommodating cavity 11, and the silicon nitride coating 12 is used for isolating the polysilicon raw material from the inner wall of the accommodating cavity 11 of the crucible 10, so as to prevent the crucible 10 from polluting the polysilicon raw material and prevent the polysilicon raw material from adhering to the crucible 10 to be unfavorable for demolding. In the actual processing process, silicon nitride powder and deionized water are mixed and stirred to form a silicon nitride raw material, the silicon nitride raw material is sprayed on the inner wall of the crucible 10 with the temperature reaching the preset temperature, and then the crucible 10 and the silicon nitride raw material are sintered at high temperature, so that the silicon nitride raw material forms a compact silicon nitride coating 12 on the inner wall of the crucible 10. Wherein the thickness of the silicon nitride coating 12 is 0.2mm or more. Specifically, the thickness of the silicon nitride coating 12 is 0.2mm to 1mm.
In this embodiment, the light source 20 emits an initial light toward the silicon nitride coating 12, the light passes through the silicon nitride coating 12 to form a detection light, and the light detection device 30 receives the detection light and determines whether the thickness of the silicon nitride coating 12 meets a preset thickness according to the detection light.
It can be appreciated that the crucible 10 is transparent, i.e. light can pass through the crucible 10, and light in the accommodating cavity 11 of the crucible 10 can pass through the inner wall of the crucible 10 to the outside; external light can penetrate through the inner wall of the crucible 10 into the accommodating cavity 11. While the silicon nitride coating 12 is opaque, i.e., the silicon nitride coating 12 absorbs light. When the thickness of the silicon nitride coating 12 reaches a predetermined thickness, the intensity of light transmitted through the silicon nitride will be lower than the predetermined intensity. Specifically, when the preset thickness of the silicon nitride coating 12 is greater than or equal to 0.2mm, and the illuminance of the initial light is above 30 lux, the initial light passes through the silicon nitride coating 12 to form a detection light with illuminance below 0.1 lux. The light detecting device 30 receives the detection light, and determines whether the thickness of the silicon nitride coating 12 satisfies a preset thickness according to whether the illuminance of the received detection light is less than 0.1 lux.
In the related art, it is often determined whether the silicon nitride coating 12 reaches a specified thickness by determining the illuminance of light transmitted through the silicon nitride coating 12 by the naked eye. However, visual inspection often fails to accurately detect some fine defects in the silicon nitride coating 12, and thus, visual inspection is less accurate.
Compared with the related art, the present embodiment receives the detection light through the light detection device 30, and determines whether the thickness of the silicon nitride coating 12 meets the preset thickness according to the detection light, thereby improving the detection accuracy.
In the polycrystalline ingot casting apparatus of the present embodiment, by detecting whether the thickness of the silicon nitride coating layer 12 satisfies a preset thickness, it is possible to detect whether or not the silicon nitride coating layer 12 has some significant defects, such as detachment from a part of the silicon nitride coating layer 12, and even cracking of a part of the silicon nitride coating layer 12; some more hidden defects, such as fine cracks, in the silicon nitride coating 12 can also be detected to detect whether the silicon nitride coating 12 is completely coated on the inner wall of the crucible 10, improving the accuracy of the detection.
The light source 20 and the light detection device 30 are disposed inside and outside the housing chamber 11, respectively, or disposed outside and inside, respectively. In the present embodiment, the light source 20 is disposed outside the housing chamber 11, and the light detection device 30 is disposed inside the housing chamber 11. The number of the light sources 20 is not limited to one or more, and the light emitted by the light sources 20 can irradiate all the silicon nitride coatings 12 in the inner wall of the accommodating cavity 11. When the number of the light sources 20 is one, the light sources 20 are slidably disposed outside the accommodating cavity 11, and the light sources 20 may be slidably disposed around the outside of the accommodating cavity 11 so as to irradiate all the silicon nitride coating 12 in the inner wall of the accommodating cavity 11. The number of the light sources 20 is plural, and each light source 20 is arranged at intervals, so that all the light emitted by all the light sources 20 can irradiate all the silicon nitride coatings 12 in the inner wall of the accommodating cavity 11.
In this embodiment, the polysilicon ingot casting apparatus 1 includes a body 40. The body 40 has a receiving groove 41. The accommodation groove 41 accommodates the crucible 10, the light source 20, and the light detection device 30. The light detection device 30 is disposed in the accommodating cavity 11, and the light source 20 is disposed outside the accommodating cavity 11 and connected to the inner wall of the accommodating groove 41. The body 40 has a receiving groove 41, and the receiving groove 41 is used for receiving the crucible 10, the light source 20, and the light source 20 detection device. The light detection device 30 is disposed in the housing cavity 11, and the light source 20 is connected to the inner wall of the housing groove 41. The initial light emitted by the light source 20 passes through the crucible 10 and the silicon nitride coating 12 to form detection light, the detection light is transmitted to the light detection device 30, and the light detection device 30 detects the thickness of the silicon nitride coating 12 according to the detection light. In the present embodiment, the light source 20 is connected to the inner wall of the housing groove 41, and the connection is not limited to a fixed connection or a sliding connection.
Referring to fig. 3, fig. 3 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application along line I-I. This embodiment may incorporate the polycrystalline silicon ingot casting apparatus 1 described above. In this embodiment, the polysilicon ingot casting apparatus further includes a support 15, the support 15 is fixed in the accommodating groove 41, and the support 15 supports the crucible 10. Specifically, the supporting frame 15 is fixed to the inner wall 42 of the receiving groove 41. The supporting frame 15 supports the crucible 10 to stabilize the crucible 10. Further, the inner wall 42 of the accommodating groove 41 includes a bottom wall 421 of the accommodating groove 41 and a side wall 422 of the accommodating groove 41 connected to the bottom wall 421 of the accommodating groove 41. The support 15 is configured to space the crucible 10 from the bottom wall 421 of the accommodating groove 41, so that the light emitted from the light source 20 disposed on the bottom wall 421 of the accommodating groove 41 can irradiate the silicon nitride coating 12 on the bottom wall 421 of the accommodating cavity 11 of the crucible 10.
In this embodiment, the light source 20 is slidably connected to the inner wall 42 of the accommodating groove 41, the light detecting device 30 includes a light sensor 31, the light source 20 faces the light sensor 31, and the light source 20 emits light toward the light sensor 31. The initial light emitted by the light source 20 passes through the silicon nitride coating 12 to form a detection light, the detection light is transmitted to the light sensor 31 opposite to the light source 20, and the light sensor 31 receives the detection light to determine whether the thickness of the silicon nitride meets the preset thickness.
Referring to fig. 4, fig. 4 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application along line I-I. This embodiment may be combined with the polycrystalline silicon ingot casting apparatus 1 provided in any of the previous embodiments. In this embodiment, the polysilicon ingot casting apparatus 1 further includes a sealing cover 50, where the sealing cover 50 covers the body 40 and seals the opening of the accommodating groove 41, so as to prevent light from being transmitted into the accommodating groove 41 through the opening of the accommodating groove 41. The body 40 has a receiving groove 41, the receiving groove 41 has an opening, and the sealing cover 50 covers the body 40 to seal the opening of the receiving groove 41. The body 40 and the sealing cover 50 form a closed space, so that external light cannot enter the interior of the accommodating groove 41 from the opening of the accommodating groove 41. The light detection device 30 is accommodated in the accommodating groove 41, the sealing cover 50 covers the body 40, so as to prevent external light from interfering with the detection of the thickness of the silicon nitride coating 12 by the light detection device 30, and improve the accuracy of detecting the thickness of the silicon nitride coating 12 by the light detection device 30.
Referring to fig. 5, fig. 5 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application along line I-I. This embodiment may be combined with the polycrystalline silicon ingot casting apparatus 1 provided in any of the previous embodiments. In this embodiment, the sealing cover 50 is provided with a crucible sealing cover 51, and the crucible sealing cover 51 covers the crucible 10 and seals the opening of the crucible 10 to prevent light from being transmitted into the accommodating cavity 11 through the opening of the accommodating cavity 11. The crucible 10 has a receiving cavity 11, and the receiving cavity 11 has an opening. The sealing cover 50 is provided with a crucible sealing cover 51, the crucible sealing cover 51 covers the crucible 10 to seal the opening of the crucible 10, so that external light cannot enter the accommodating cavity 11, the operation of the light detection device 30 arranged in the accommodating cavity 11 cannot be interfered, and the accuracy of detecting the thickness of the silicon nitride coating 12 by the light detection device 30 is improved. And simultaneously, the light emitted by the light source 20 is transmitted into the accommodating cavity 11 through the opening of the accommodating cavity 11.
Referring again to fig. 5, the sealing cap 50 further includes a light source sealing cap 52 coupled to the crucible sealing cap 51, the light source sealing cap 52 being sealingly coupled between the crucible 10 and the body 40 to seal the opening between the crucible 10 and the body 40. The light source 20 is connected to the inner wall 42 of the accommodating groove 41, and the crucible 10 is accommodated in the accommodating groove 41, and the light source 20 is arranged between the inner wall 42 of the accommodating groove 41 and the side wall of the crucible 10. The light source sealing cover 52 is hermetically connected between the crucible 10 and the body 40, so that the initial light emitted from the light source 20 cannot penetrate out of the light source sealing cover 52, enter the accommodating cavity 11 of the crucible 10 from the opening of the crucible 10, and interfere with the detection of the light detecting device 30. The initial light can only pass through the side wall of the crucible 10 and the silicon nitride coating 12 to enter the light detection device 30, so that the accuracy of detecting the thickness of the silicon nitride coating 12 by the light detection device 30 is improved.
Referring to fig. 5 again, the light detecting device 30 is fixedly connected to a side of the crucible sealing cover 51, which is close to the inner wall 42 of the accommodating groove 41. The light detection device 30 is fixedly connected to one side of the crucible sealing cover 51, which is close to the inner wall 42 of the accommodating groove 41, so that the light detection device 30 is firmly fixed on the crucible sealing cover 51.
Referring to fig. 6 to 7, fig. 6 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the present application along line I-I; fig. 7 is a cross-sectional view of a polysilicon ingot casting apparatus according to another embodiment of the application taken along line I-I in another state. Another embodiment of the present application provides a cross-sectional view of the polysilicon ingot casting apparatus 1 along line I-I. The present embodiment may be combined with any one of the polycrystalline silicon ingot casting apparatuses 1 provided in fig. 1 to 4. In this embodiment, the inner wall 42 includes a bottom wall 421 and a side wall 422 connected to the bottom wall 421. The polycrystalline silicon ingot casting apparatus 1 includes a sliding device 60. The sliding device 60 includes a sliding base 61 and a fixing portion 62 connected to the sliding base 61. The sliding base 61 is slidably connected to a side of the crucible sealing cover 51 near the bottom wall 421, the fixing portion 62 is fixedly connected to the light detecting device 30, and the sliding base 61 may slide near the side wall 422 or slide away from the side wall 422, so as to drive the light detecting device 30 to slide near the side wall 422 or slide away from the side wall 422. The slide base 61 is slidably connected to a side of the crucible seal housing 51 adjacent to the bottom wall 421, and the slide base 61 is slidable on a side of the crucible seal housing 51 adjacent to the bottom wall 421. The fixing portion 62 is fixedly connected to the light detecting device 30, so that the sliding base 61 can drive the fixing portion 62 and the light detecting device 30 to slide closer to the side wall 422 or slide away from the side wall 422. I.e. the light detection means 30 can slide in the positive or negative direction of the X-axis. The light detection device 30 slides closer to the sidewall 422 to receive the detection light that passes through the silicon nitride coating 12.
In this embodiment, the sliding device 60 further includes a telescopic portion 63 connected between the sliding base 61 and the fixed portion 62, and the telescopic portion 63 may extend in a direction close to the bottom wall 421 or retract in a direction away from the bottom wall 421, so as to drive the light detecting device 30 to slide toward the bottom wall 421 or slide away from the bottom wall 421. The telescopic device may drive the light detection device 30 to slide toward the bottom wall 421 or slide away from the bottom wall 421, i.e. the light detection device 30 may slide along the positive direction or the negative direction of the Y-axis. It will be appreciated that the side of the crucible sealing cover 51 adjacent to the bottom wall 421 is provided with a sliding rail, on which the sliding base 61 can slide.
Since the light detecting device 30 can slide in the X or Y axis direction, the light detecting device 30 can detect the silicon nitride coating 12 attached to each portion of the inner wall of the housing chamber 11.
With continued reference to fig. 6 and 7, the polysilicon ingot casting apparatus further includes a processor 70 and a motor 80. The processor 70 is electrically connected with the motor 80, the motor 80 is connected with the sliding base 61 and the telescopic part 63, the processor 70 sends a control command to the motor 80, and the motor 80 outputs torque to the sliding base 61 and the telescopic part 63 after receiving the control command, so as to drive the sliding base 61 to slide and drive the telescopic part 63 to stretch. The processor 70 is electrically connected to the motor 80, and the processor 70 is configured to control the motor 80 to output torque. After receiving the control command, the motor 80 outputs torque to the sliding base 61 and the telescopic part 63, so that the sliding base 61 slides and the telescopic part 63 stretches and contracts, and further drives the light detection device 30 to slide along the X-axis direction and the Y-axis direction.
In this embodiment, the polycrystalline ingot casting apparatus further comprises a distance detecting device 90. The distance detecting device 90 is fixedly connected to the light detecting device 30, and the distance detecting device 90 is electrically connected to the processor 70, and the distance detecting device 90 is configured to detect a distance value from the light detecting device 30 to the side wall 422 and the bottom wall 421, and transmit the distance value to the processor 70, so that the processor 70 issues the control command according to the distance value. The distance detecting device 90 emits a distance signal, and the distance signal is reflected to the distance detecting device 90 after being irradiated to the sidewall 422 and the sidewall 422, so that the distance detecting device 90 receives the distance signal. The distance detecting means 90 detects the distance value of the optical detecting means to the side wall 422 and the bottom wall 421 based on the time when the distance signal is emitted and the time when the distance signal is received. The distance detecting device 90 transmits the distance value to the processor 70, so that the processor 70 sends a control instruction according to the distance value to control the output of the motor 80, thereby improving the automation degree of the polysilicon ingot casting equipment 1.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a method for forming a polysilicon ingot according to an embodiment of the application. The polysilicon ingot casting method is used for detecting whether the silicon nitride coating attached to the inner wall of the crucible meets the preset thickness. The polysilicon ingot casting method comprises the following steps: s100, S200, S300, and S400, S100, S200, S300, and S400 are described in detail below.
S100: the crucible is provided with a containing cavity, and a silicon nitride coating is additionally arranged on the inner wall of the containing cavity.
The accommodating cavity is used for loading polycrystalline silicon ingot casting raw materials, a silicon nitride coating is additionally arranged on the inner wall of the accommodating cavity, and is used for isolating the polycrystalline silicon raw materials from the inner wall of the accommodating cavity of the crucible, so that the pollution of the crucible to the polycrystalline silicon raw materials is avoided, and the adhesion of the polycrystalline silicon and the crucible is avoided, so that the demolding is not facilitated.
S200: the light source and the light detection device are respectively arranged at the inner side and the outer side of the accommodating cavity or respectively arranged at the outer side and the inner side.
S300: and controlling the light source to emit initial light towards the coating, wherein the initial light passes through the silicon nitride coating to form detection light, and the detection light is transmitted to the light detection device.
S400: and controlling the light detection device to receive the detection light, and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light.
The light detection device is used for receiving detection light and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the detection light, so that the accuracy of detecting whether the thickness of the silicon nitride coating meets the preset thickness is improved, and the efficiency of detecting whether the thickness of the silicon nitride coating meets the preset thickness is improved.
Referring to fig. 9, fig. 9 is a schematic diagram illustrating a method for forming a polysilicon ingot according to another embodiment of the present application. This embodiment may provide a polysilicon ingot casting method in conjunction with fig. 8 and the related description. In addition to S100, S200, S300, and S400, the polysilicon method further includes S500 after the step S400, and the step S500 is described in detail below.
S500: and when the thickness of the silicon nitride coating does not meet the preset thickness, spraying the silicon nitride coating on the inner wall of the crucible.
When the thickness of the silicon nitride coating does not meet the preset thickness, spraying the silicon nitride coating on the inner wall of the crucible so that the silicon nitride coating on the inner wall of the crucible meets the preset thickness, and the adhesion of the polycrystalline silicon and the inner wall of the crucible is avoided, so that the quality of the polycrystalline silicon cast ingot is improved.
The foregoing has outlined rather broadly the more detailed description of embodiments of the application, wherein the principles and embodiments of the application are explained in detail using specific examples, the above examples being provided solely to facilitate the understanding of the method and core concepts of the application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.

Claims (12)

1. The polycrystalline silicon ingot casting equipment is characterized by comprising a crucible, a light source and a light detection device, wherein the crucible is provided with a containing cavity, a silicon nitride coating is additionally arranged on the inner wall of the containing cavity, the inner wall comprises a bottom wall and a side wall connected with the bottom wall, the light source and the light detection device are respectively arranged on the inner side and the outer side of the containing cavity or respectively arranged on the outer side and the inner side, the light source emits initial light towards the silicon nitride coating, the initial light is visible light, the initial light passes through the silicon nitride coating to form detection light, the detection light is transmitted to the light detection device, the light detection device receives the detection light, and whether the thickness of the silicon nitride coating meets the preset thickness is judged according to the illuminance of the detection light;
The polycrystalline silicon ingot casting equipment is also provided with a crucible sealing cover, and the crucible sealing cover is connected with the crucible and seals the opening of the crucible;
The polycrystalline silicon ingot casting equipment further comprises a sliding device, wherein the sliding device can drive the light ray detection device to slide close to the side wall or slide away from the side wall;
The polycrystalline silicon ingot casting equipment further comprises a processor, a motor and a distance detection device, wherein the processor is electrically connected with the motor, the motor is connected with the sliding device and can output torque to the sliding device to drive the sliding device to work, the distance detection device is fixedly connected with the light detection device and is electrically connected with the processor, the distance detection device is used for detecting distance values from the light detection device to the side wall and the bottom wall and transmitting the distance values to the processor, so that the processor sends control instructions according to the distance values, and the control instructions are used for controlling the output of the motor.
2. The apparatus of claim 1, wherein the apparatus comprises a body having a receiving slot for receiving the crucible, the light source, and the light detecting device, the light detecting device being disposed in the receiving cavity, the light source being disposed outside the receiving cavity and connected to an inner wall of the receiving slot.
3. The polysilicon ingot casting apparatus of claim 2, further comprising a support frame fixed in the receiving recess, the support frame supporting the crucible.
4. The polysilicon ingot casting apparatus of claim 2, further comprising a sealing cap that engages the body and seals the opening of the receiving cavity to prevent light from passing into the receiving cavity through the opening of the receiving cavity.
5. The polysilicon ingot casting apparatus of claim 4, wherein the seal housing further comprises a light source seal housing coupled to the crucible seal housing, the light source seal housing being sealingly coupled between the crucible and the body to seal the opening between the crucible and the body.
6. The polysilicon ingot casting apparatus of claim 4, wherein the light detecting device is fixedly connected to a side of the crucible sealing cover adjacent to the inner wall of the receiving groove.
7. The apparatus of claim 4, wherein the slide comprises a slide base and a fixed portion connected to the slide base, the slide base is slidably connected to a side of the crucible sealing cover near the bottom wall, the fixed portion is fixedly connected to the light detecting device, and the slide base can slide closer to the side wall or slide away from the side wall to drive the light detecting device to slide closer to the side wall or slide away from the side wall.
8. The polysilicon ingot casting apparatus of claim 7, wherein the sliding device further comprises a telescoping portion connected between the sliding base and the fixed portion, the telescoping portion being extendable in a direction toward the bottom wall or retractable in a direction away from the bottom wall to drive the light detecting device to slide toward or away from the bottom wall.
9. The polycrystalline silicon ingot casting apparatus of claim 8, wherein the motor is connected with the sliding base and the telescopic part, the processor sends a control command to the motor, and the motor outputs torque to the sliding base and the telescopic part after receiving the control command to drive the sliding base to slide and drive the telescopic part to extend and retract.
10. The polysilicon ingot casting apparatus of claim 2 wherein the light source is slidably coupled to an inner wall of the receiving chamber, the light detecting means comprises a light sensor, the light source is opposite the light sensor, and the light source emits light toward the light sensor.
11. The polycrystalline silicon ingot casting method is characterized by comprising the following steps of:
Providing a crucible, a light source and a light detection device, wherein the crucible is provided with a containing cavity, a silicon nitride coating is additionally arranged on the inner wall of the containing cavity, and the inner wall comprises a bottom wall and a side wall connected with the bottom wall;
providing a crucible sealing cover, wherein the crucible sealing cover is connected with the crucible and seals an opening of the crucible;
the light source and the light ray detection device are respectively arranged at the inner side and the outer side of the accommodating cavity or respectively arranged at the outer side and the inner side;
controlling the light source to emit initial light towards the coating, wherein the initial light is visible light, the initial light passes through the silicon nitride coating to form detection light, and the detection light is transmitted to the light detection device;
Controlling the light detection device to receive the detection light and judging whether the thickness of the silicon nitride coating meets the preset thickness according to the illuminance of the detection light;
providing a sliding device, wherein the sliding device can drive the light detection device to slide close to the side wall or slide away from the side wall;
the device comprises a processor, a motor and a distance detection device, wherein the processor is electrically connected with the motor, the motor is connected with the sliding device and can output torque to the sliding device to drive the sliding device to work, the distance detection device is fixedly connected with the light detection device and is electrically connected with the processor, the distance detection device is used for detecting the distance value from the light detection device to the side wall and the bottom wall and transmitting the distance value to the processor, so that the processor sends a control instruction according to the distance value, and the control instruction is used for controlling the output of the motor.
12. The method of claim 11, further comprising, after the step of controlling the light detecting device to receive the detection light and determining whether the thickness of the silicon nitride coating meets a preset thickness based on the detection light:
and when the thickness of the silicon nitride coating does not meet the preset thickness, spraying the silicon nitride coating on the inner wall of the crucible.
CN201911406321.0A 2019-12-31 2019-12-31 Polycrystalline silicon ingot casting equipment and polycrystalline silicon ingot casting method Active CN110938871B (en)

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