CN110808296B - 一种双层半导体结构的光电导型深紫外单色光电探测器 - Google Patents
一种双层半导体结构的光电导型深紫外单色光电探测器 Download PDFInfo
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Abstract
本发明公开了一种双层半导体结构的光电导型深紫外单色光电探测器。包括由下至上依次叠置而成的绝缘衬底、窄带隙氮化硼薄膜和宽带隙氮化硼薄膜,绝缘衬底上表面覆盖有窄带隙氮化硼薄膜,窄带隙氮化硼薄膜上表面覆盖有宽带隙氮化硼薄膜;窄带隙氮化硼薄膜中埋设有两个栅状Ti金属电极;通过调节窄带隙氮化硼薄膜和宽带隙氮化硼薄膜的带隙以及两者之间的带隙差,在深紫外波段调节探测器的响应波长。本发明通过带隙不同的氮化硼层状结构,实现了单色光响应,探测效果好,单色性好,可以简单实现探测器响应波长和响应带宽,提高了电极对光生载流子的收集能力。
Description
技术领域
本发明属于光电探测领域,具体涉及一种双层半导体结构的光电导型深紫外单色光电探测器。
背景技术
近年来,光电探测的需求日益增加,特别是紫外探测技术。光电探测技术的核心是光电探测器。光电探测器有电荷耦合器件、光电倍增管和半导体光电管几类。其中半导体光电探测器功耗低,体积小,是当前光电探测领域主流的器件。通常,半导体光电探测器的响应带宽较大,当入射光子能量大于探测器的半导体材料的带隙时,探测器均有响应,因此半导体光电探测器对单色光分辨能力较弱。当前,单色半导体光电探测器通常需要前置滤光片或光栅,探测器的体积和损耗较大,使其应用受到限制。因此,不需要前置滤光片或光栅的半导体光电探测器具有广阔的应用前景。
发明内容
为了实现单色光电探测,本发明提供了一种双层半导体结构的光电导型深紫外单色光电探测器,设置了栅状Ti金属电极,在设置了栅状Ti金属电极的基础上,通过调整氮化硼薄膜的带隙来调节响应波长的光电导型探测器。
本发明采用的技术方案如下:
一、一种双层半导体结构的光电导型深紫外单色光电探测器:
如图1和图3所示,具体实施包括由下至上依次叠置而成的绝缘衬底、窄带隙氮化硼薄膜和宽带隙氮化硼薄膜,绝缘衬底上表面覆盖有窄带隙氮化硼薄膜,窄带隙氮化硼薄膜上表面覆盖有宽带隙氮化硼薄膜;窄带隙氮化硼薄膜中埋设有两个栅状Ti金属电极,窄带隙氮化硼薄膜将栅状Ti金属电极整体完全包裹住,两个栅状Ti金属电极在水平上平行布置,两个栅状Ti金属电极均沿光传导方向布置;通过调节窄带隙氮化硼薄膜和宽带隙氮化硼薄膜的带隙以及两者之间的带隙差,在深紫外波段调节探测器的响应波长。
窄带隙氮化硼薄膜和宽带隙氮化硼薄膜是相对说法比较,两个氮化硼薄膜中,带隙较大者为宽带隙氮化硼薄膜,带隙较小者为窄带隙氮化硼薄膜。
每个所述栅状Ti金属电极宽度为1-3μm,厚度为100-300nm,两个栅状Ti金属电极之间的水平间距为1-3μm,由金属钛通过剥离工艺制备而成,如图2所示,两个栅状Ti金属电极以插指电极结构形式布置,这样能有效提高收集光生载流子的能力。
所述的窄带隙氮化硼薄膜的厚度在300-500nm之间,通过剥离工艺在厚度为100-200nm的窄带隙氮化硼薄膜上表面生长两个栅状Ti金属电极后,再继续生长厚度为200-300nm的窄带隙氮化硼薄膜,完全包裹住栅状Ti金属电极整体。
所述的宽带隙氮化硼薄膜厚度在200-300nm之间。
所述的窄带隙氮化硼薄膜和宽带隙氮化硼薄膜均采用99.99%的氮化硼为靶材通过磁控溅射法制备而成,通过控制磁控溅射的气相组分制备,气相组分为氢气和氮气。这样沉积速度快,性能稳定,膜与衬底结核性好以及操作简单的优点。
所述栅状Ti金属电极采用钛金属材料制备。
所述绝缘衬底采用绝缘材料制备而成,绝缘材料优选为石英、带有氧化层的单晶硅片或单晶硅片。
通过调节窄带隙氮化硼薄膜和宽带隙氮化硼薄膜的带隙以及两者之间的带隙差,具体是:在制备氮化硼薄膜过程中,通过控制氮化硼薄膜局域模态控制氮化硼薄膜带隙,局域模态包括局域c轴朝向、局域c面面积和局域c向层数,通过增大局域c轴与衬底平面夹角减小薄膜带隙,通过减小局域c面面积减小薄膜带隙,通过增加局域c向层数减小薄膜带隙。
局域模态是指氮化硼薄膜中六方氮化硼的局域周期特性:局域是六方氮化硼呈现周期特性的区域,局域c轴朝向是指六方氮化硼在局域内六方氮化硼六元环平面的法向,局域c面面积是局域内六方氮化硼六元环平面的面积,局域c向层数则是局域内六元环沿c轴的层数。
通过增加氮化硼薄膜的氮缺陷密度降低六方氮化硼带隙。
氮化硼薄膜制备具体是包括如下步骤:
1)取绝缘衬底,依次置于丙酮、无水乙醇和去离子水中进行超声清理,并烘干;
2)将绝缘衬底放入磁控溅射炉内托架上,封闭炉门后,调节炉内真空度;
3)向磁控溅射炉内通入氮气与氢气的混合气,将绝缘衬底加热至400-500℃,调整气压为1Pa-2.5Pa,以氮化硼为靶材,磁控溅射1小时;
所述步骤3)中,通过增大磁控溅射的溅射功率,调控增大局域c轴朝向与薄膜平面夹角,减小局域c面面积;通过对绝缘衬底进行加热,提高绝缘衬底的温度,调控增大局域c轴朝向与薄膜平面的夹角,增大局域c面面积;或者通过提高磁控溅射时的气压,调控增大局域c面面积;或者通过增大混合气的氢气组分比例,调控减小氮化硼薄膜中的氮缺陷密度;
4)磁控溅射后,将衬底与薄膜加热至600-900℃,在惰性气体的保护下,退火至少1小时。
所述氮气与氢气的混合气中,氮气的体积比例为20%-80%。制备的氮化硼薄膜的带隙随着制备时气相中氮气比例增加而减小。
所述的惰性气体是氮气或氩气。
磁控溅射使用的靶材是纯度为99.99%的BN。
二、一种双层半导体结构的光电导型深紫外单色光电探测器的检测方法:
分别给两个栅状Ti金属电极施加正负电压,使得栅状Ti金属电极上通过较小的电流;当波长大于窄带隙氮化硼薄膜吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上,无光生载流子产生,通过栅状Ti金属电极的电流不发生改变;当波长介于窄带隙氮化硼薄膜和宽带隙氮化硼薄膜吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上时,光被窄带隙氮化硼薄膜吸收,产生的光生载流子被电极收集,通过栅状Ti金属电极的电流增大;当波长小于宽带隙氮化硼薄膜吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上时,光被宽带隙氮化硼薄膜吸收,产生的光生载流子无法被电极收集,光电探测器通过检测两个栅状Ti金属电极之间的电流检测特定波长的光强变化。
所述的特定波长处于窄带隙氮化硼薄膜响应波长,但不属于宽带隙氮化硼薄膜响应波长。
在窄带隙氮化硼薄膜和宽带隙氮化硼薄膜采用磁控溅射法制备过程中,通过磁控溅射时的气相组分,调节氮化硼薄膜的带隙,控制探测器的响应波长和响应带宽。
本发明光电导型深紫外单色光电探测器能够通过特殊手段减小调整带隙,进而实现调控探测器响应波长,扩大了探测范围,使得能完整覆盖深紫外波段。
本发明的有益效果:
本发明的探测效果好,结构简单,单色性好在单色光电传感领域有很好的应用前景。
本发明通过带隙不同的氮化硼层状结构,实现了单色光响应,通过磁控溅射和化学气相沉积的气相组分调节两层氮化硼带隙,可以简单地实现调控探测器响应波长。电极完全包覆于半导体材料中,提高了电极对光生载流子的收集能力。
附图说明
图1是本发明的结构剖面图;
图2是本发明的俯视图,虚线部分为栅状Ti金属电极;
图3是本发明的结构立体图;
图4为六方氮化硼带隙随氮氢体积比变化的关系图;
图5为实施例2中不同组氮化硼薄膜的傅里叶红外吸收谱1380cm-1峰的半峰宽图;
图6为实施例2中不同组氮化硼薄膜的带隙图。
图中:宽带隙氮化硼薄膜(1)、栅状Ti金属电极(2)、窄带隙氮化硼薄膜(3)、绝缘衬底(4)。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图1和图3所示,具体实施包括由下至上依次叠置而成的绝缘衬底4、窄带隙氮化硼薄膜3和宽带隙氮化硼薄膜1,绝缘衬底4上表面覆盖有窄带隙氮化硼薄膜3,窄带隙氮化硼薄膜3上表面覆盖有宽带隙氮化硼薄膜1;窄带隙氮化硼薄膜3中埋设有两个栅状Ti金属电极2,窄带隙氮化硼薄膜3将栅状Ti金属电极2整体完全包裹住,两个栅状Ti金属电极2在水平上平行布置,两个栅状Ti金属电极2均沿光传导方向布置;通过调节窄带隙氮化硼薄膜3和宽带隙氮化硼薄膜1的带隙以及两者之间的带隙差,在深紫外波段调节探测器的响应波长。如图2所示,两个栅状Ti金属电极以插指电极结构形式布置。
具体实施中,制备两个响应波长不同的传感器。以石英作为绝缘衬底4,采用剥离工艺在绝缘衬底4上生长厚度为200nm的窄带隙氮化硼薄膜,随后在窄带隙氮化硼薄膜上制备栅状Ti金属电极,使用的金属材料为金属钛。制备的电极厚度约为100nm,电极宽度为2μm,电极间距为2μm,接着依次溅射厚度为300nm的窄带隙氮化硼薄膜和厚度为200nm的宽带隙氮化硼薄膜。
氮化硼薄膜采用磁控溅射法生长;溅射采用纯度为99.99%的BN为靶材,宽带隙氮化硼薄膜和窄带隙氮化硼薄膜的溅射时气相组分的氮氢体积比分别为2:1和5:1以及1:5和7:8,沉积时间1小时,并在沉积后进行高温退火。
在探测器两端引出电极,并施加正负电压,当外界光波长不等于探测器响应波长时,通过电极的电流无明显变化,当外界光波长等于探测器的响应波长时,通过电极的电流增大,达到检测单色光的效果。
实施例:
具体实施中,制备两个响应波长不同的传感器。以石英作为绝缘衬底4,厚度为1mm;栅状Ti金属电极2厚度为100nm,单个电极宽度为2μm,间距为2μm;窄带隙氮化硼薄膜3厚度为500nm,宽带隙氮化硼薄膜1厚度为200nm。
探测器的响应波长为处于窄带隙氮化硼薄膜氮吸收波长内但不处于宽带隙氮化硼吸收波长内的波长。但外界光波长大于探测器响应波长时,无光生载流子生成,通过电极的电流不增大。当外界光波长等于探测器响应波长时,在窄带隙氮化硼薄膜2中有光生载流子生成,光生载流子被电极收集,通过电极的电流增大。当外界光波长小于探测器响应波长时,外界光完全被宽带隙氮化硼薄膜1吸收,产生的光生载流子无法被电极收集,电流不增大。通过检测电流强弱,即可检测外界单色光光强。
制备的两个单色深紫外传感器工作于10V电压时,暗电流小于100pA,光电流大于10nA,光暗电流比大于100。氮氢体积比为2:1和5:1的传感器响应波段为230-240nm,体积比为1:5和7:8的传感器响应波段分别为220-230nm。采用栅状Ti金属电极,并将电极用窄带隙氮化硼薄膜完全包裹住,使传感器的光电流提高了10倍。因此,基于此结构可制备具有不同响应波长的单色深紫外传感器。
同时具体实施中,对氮化硼薄膜进行特殊制备实施。
制备过程1:
1)取四块石英为绝缘衬底,依次置于丙酮、无水乙醇和去离子水中进行超声清理,并烘干;
2)将一块石英衬底放入磁控溅射炉内托架上,封闭炉门后,将炉内真空度降低至不高于5×10-3Pa;
3)向溅射炉内通入氮气与氢气的混合气,氮气比例为20%,并将绝缘衬底加热至400℃,调整气压为1.5Pa,磁控溅射1小时;
4)将衬底与薄膜加热至700℃,在惰性气体的保护下,退火至少1小时。
5)第二块至第四块石英衬底依次重复步骤2、3、4,其中溅射时氮气的比例分别调整为46.7%、73.3%和100%。利用紫外-可见分光光度计测量制备的六方氮化硼薄膜的吸收带边,根据测量的吸收带边获得薄膜的带隙。
如图4所示,随着制备时氮气比例的提高,六方氮化硼随着制备时氮气比例的提高而降低。
制备过程2:
1)取四块单晶硅片为绝缘衬底,依次置于丙酮、无水乙醇和去离子水中进行超声清理,并烘干;
2)将一块石英衬底放入磁控溅射炉内托架上,封闭炉门后,将炉内真空度降低至不高于5×10-3Pa;
3)向溅射炉内通入氮气与氢气的混合气,以表1中的条件生长六方氮化硼薄膜,磁控溅射1小时;
表1
样品编号 | 1 | 2 | 3 | 4 |
衬底温度(℃) | 400 | 300 | 400 | 400 |
溅射功率(W) | 300 | 300 | 400 | 300 |
溅射气压(Pa) | 1.5 | 1.5 | 1.5 | 1.0 |
4)将衬底与薄膜加热至700℃,在惰性气体的保护下,退火至少1小时。
5)利用傅里叶红外分光光度计测量样品红外吸收谱,分析1380cm-1处吸收峰的半峰宽,利用紫外-可见分光光度计测量样品的吸收带边,根据测量的吸收带边获得薄膜的带隙。
如图5所示,这是根据表1生长条件生长的六方氮化硼薄膜傅里叶红外吸收谱1380cm-1峰半峰宽图。1380cm-1峰半峰宽可以反映样品局域模态,局域c面面积越小,局域c向层数越少,半峰宽越大,局域c轴朝向影响不大。样品1为对照组,样品2生长温度较低,导致局域c面面积较小,半峰宽变大;样品3溅射功率较大,导致局域c面面积较小,半峰宽变大;样品4溅射气压较小,导致局域c向层数较少,局域c面面积较小,局域c轴夹角较大,半峰宽变大。
如图6所示,样品2、3、4的带隙相较于对照组1均变小。
Claims (10)
1.一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:包括由下至上依次叠置而成的绝缘衬底(4)、窄带隙氮化硼薄膜(3)和宽带隙氮化硼薄膜(1),绝缘衬底(4)上表面覆盖有窄带隙氮化硼薄膜(3),窄带隙氮化硼薄膜(3)上表面覆盖有宽带隙氮化硼薄膜(1);窄带隙氮化硼薄膜(3)中埋设有两个栅状Ti金属电极(2),窄带隙氮化硼薄膜(3)将栅状Ti金属电极(2)整体完全包裹住,两个栅状Ti金属电极(2)在水平上平行布置;通过调节窄带隙氮化硼薄膜(3)和宽带隙氮化硼薄膜(1)的带隙以及两者之间的带隙差,在深紫外波段调节探测器的响应波长,进而实现探测器的深紫外单色光电探测。
2.根据权利要求1所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:每个所述栅状Ti金属电极(2)宽度为1-3μm,厚度为100-300nm,两个栅状Ti金属电极(2)之间的水平间距为1-3μm,由金属钛通过剥离工艺制备而成,两个栅状Ti金属电极(2)以插指电极结构形式布置。
3.根据权利要求1所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:所述的窄带隙氮化硼薄膜(3)的厚度在300-500nm之间,通过剥离工艺在厚度为100-200nm的窄带隙氮化硼薄膜(3)上表面生长两个栅状Ti金属电极(2)后,再继续生长厚度为200-300nm的窄带隙氮化硼薄膜(3),完全包裹住栅状Ti金属电极(2)整体。
4.根据权利要求1所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:所述的宽带隙氮化硼薄膜(1)厚度在200-300nm之间。
5.根据权利要求1所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:所述的窄带隙氮化硼薄膜(3)和宽带隙氮化硼薄膜(1)均采用99.99%的氮化硼为靶材通过磁控溅射法制备而成,通过控制磁控溅射的气相组分制备,气相组分为氢气和氮气。
6.根据权利要求1所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:通过调节窄带隙氮化硼薄膜(3)和宽带隙氮化硼薄膜(1)的带隙以及两者之间的带隙差,具体是:在制备氮化硼薄膜过程中,通过控制氮化硼薄膜局域模态控制氮化硼薄膜带隙,局域模态包括局域c轴朝向、局域c面面积和局域c向层数,通过增大局域c轴与衬底平面夹角减小薄膜带隙,通过减小局域c面面积减小薄膜带隙,通过增加局域c向层数减小薄膜带隙。
7.根据权利要求6所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:通过增加氮化硼薄膜的氮缺陷密度降低氮化硼薄膜带隙。
8.根据权利要求7所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:氮化硼薄膜制备具体是包括如下步骤:
1)取绝缘衬底,依次置于丙酮、无水乙醇和去离子水中进行超声清理,并烘干;
2)将绝缘衬底放入磁控溅射炉内,封闭炉门后,调节炉内真空度;
3)向磁控溅射炉内通入氮气与氢气的混合气,以氮化硼为靶材,磁控溅射1小时;
步骤3)中,通过增大磁控溅射的溅射功率,调控增大局域c轴朝向与薄膜平面夹角,减小局域c面面积;通过对绝缘衬底进行加热,提高绝缘衬底的温度,调控增大局域c轴朝向与薄膜平面的夹角,增大局域c面面积;或者通过提高磁控溅射时的气压,调控增大局域c面面积;或者通过增大混合气的氢气组分比例,调控减小氮化硼薄膜中的氮缺陷密度;
4)磁控溅射后,在惰性气体的保护下,退火至少1小时。
9.根据权利要求8所述的一种双层半导体结构的光电导型深紫外单色光电探测器,其特征在于:所述氮气与氢气的混合气中,氮气的体积比例为20%-80%。
10.一种根据权利要求1-9任一所述的双层半导体结构的光电导型深紫外单色光电探测器的检测方法,其特征在于:分别给两个栅状Ti金属电极(2)施加正负电压,使得栅状Ti金属电极(2)上通过电流;当波长大于窄带隙氮化硼薄膜(3)吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上时,无光生载流子产生,通过栅状Ti金属电极(2)的电流不发生改变;当波长介于窄带隙氮化硼薄膜(3)和宽带隙氮化硼薄膜(1)吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上时,光被窄带隙氮化硼薄膜(3)吸收,产生的光生载流子被电极收集,通过栅状Ti金属电极(2)的电流增大;当波长小于宽带隙氮化硼薄膜(1)吸收带边对应波长的光照射到光电导型深紫外单色光电探测器上时,光被宽带隙氮化硼薄膜(1)吸收,产生的光生载流子无法被电极收集,光电探测器通过检测两个栅状Ti金属电极(2)之间的电流检测特定波长的光强变化。
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