CN114019561A - Neutron detector and detection system - Google Patents
Neutron detector and detection system Download PDFInfo
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- CN114019561A CN114019561A CN202111312203.0A CN202111312203A CN114019561A CN 114019561 A CN114019561 A CN 114019561A CN 202111312203 A CN202111312203 A CN 202111312203A CN 114019561 A CN114019561 A CN 114019561A
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- neutron detector
- boron nitride
- nitride semiconductor
- neutron
- metal layer
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- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 229910052582 BN Inorganic materials 0.000 claims abstract description 53
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000005234 chemical deposition Methods 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
Abstract
The embodiment of the application provides a neutron detector and detection system, wherein, the neutron detector includes boron nitride semiconductor and electrode, the boron nitride semiconductor has relative first surface and the second surface that sets up, one of them electrode and first surface contact, another electrode and second surface contact, because the boron nitride semiconductor is sensitive to the neutron, the electrode configuration is the signal of telecommunication that produces when obtaining the boron nitride semiconductor capture neutron, therefore, can realize carrying out the function detected to the neutron, this neutron detector's detection efficiency is high.
Description
Technical Field
The application relates to the technical field of neutron detection, in particular to a neutron detector and a detection system.
Background
In the nuclear radiation detector technology, the neutron detector technology is widely applied to the fields of national defense, weapons, scientific research and the like and various large-scale scientific devices and nuclear facilities, and the main neutron detectors in the prior art comprise a gas detector, a scintillator detector, a semiconductor detector, a thermoluminescent detector, a track detector and a self-powered detector, however, the neutron detectors in the related technologies have low detection efficiency.
Disclosure of Invention
In view of this, it is desirable to provide a neutron detector and a detection system with high detection efficiency.
To achieve the above object, a first aspect of the embodiments of the present application provides a neutron detector, including:
a boron nitride semiconductor having oppositely disposed first and second surfaces;
two electrodes, wherein one of the electrodes is in contact with the first surface and the other of the electrodes is in contact with the second surface.
In one embodiment, the boron nitride semiconductor is formed by low pressure chemical vapor deposition.
In one embodiment, the first surface and the second surface are disposed in parallel, and the first surface and the second surface are two surfaces of the boron nitride semiconductor with the smallest relative distance therebetween.
In one embodiment, the electrodes are metal films formed on the first surface and the second surface by evaporation.
In one embodiment, the metal film is made of gold, nickel or aluminum.
In one embodiment, the neutron detector includes an electrically insulating base on which the boron nitride semiconductor is fixed.
In one embodiment, the electrically insulating base has a resistance in the range of 1012Ω-1014Ω。
In one embodiment, the electrically insulating base is made of aluminum nitride.
In one embodiment, the neutron detector includes a conductive metal layer between the first surface and the electrically insulating base, the conductive metal layer having a larger physical dimension than the boron nitride semiconductor.
In one embodiment, the electrically conductive metal layer is formed on the electrically insulating base by chemical deposition.
In one embodiment, the conductive metal layer is made of gold, nickel or aluminum.
A second aspect of the embodiments of the present application provides a detection system, including the neutron detector described above.
The embodiment of the application provides a neutron detector and detection system, wherein, the neutron detector includes boron nitride semiconductor and electrode, the boron nitride semiconductor has relative first surface and the second surface that sets up, one of them electrode and first surface contact, another electrode and second surface contact, because the boron nitride semiconductor is sensitive to the neutron, the electrode configuration is the signal of telecommunication that produces when obtaining the boron nitride semiconductor capture neutron, therefore, can realize carrying out the function detected to the neutron, this neutron detector's detection efficiency is high.
Drawings
FIG. 1 is a schematic structural diagram of a neutron detector according to an embodiment of the present application;
fig. 2 is a schematic detection diagram of a detection system according to an embodiment of the present application.
Description of the reference numerals
A boron nitride semiconductor 10; a second surface 10 a; an electrode 20; an electrically insulating base 30; mounting holes 30 a; a conductive metal layer 40; a wire 50; a neutron detector 100.
Detailed Description
It should be noted that, in the present application, technical features in examples and embodiments may be combined with each other without conflict, and the detailed description in the specific embodiment should be understood as an explanation of the gist of the present application and should not be construed as an improper limitation to the present application.
An embodiment of the present application provides a neutron detector 100, please refer to fig. 1, which includes a boron nitride semiconductor 10 and an electrode 20, wherein the boron nitride semiconductor 10 has a first surface and a second surface 10a disposed oppositely; the number of electrodes 20 is two, one electrode 20 being in contact with the first surface and the other electrode 20 being in contact with the second surface 10 a.
Another embodiment of the present application further provides a detection system including the neutron detector 100 provided in any of the embodiments of the present application.
Specifically, referring to fig. 2, the detection system includes a neutron detector 100, a preamplifier, a main amplifier, a multichannel pulse analyzer, and a computer, which are connected in sequence, wherein the preamplifier is connected to the high voltage circuit, and the main amplifier is connected to the oscilloscope.
In the related technology, a He-3 tube is generally adopted for neutron detection, the He-3 tube is expensive, and the neutron sensitive material is coated on a silicon semiconductor detector, so that the neutron can be detected, but the problem of low detection efficiency exists. He-3 tubes can generally improve detection sensitivity by increasing the diameter, length, and gas pressure of the tube.
In contrast, the neutron detector 100 provided in the embodiment of the present application includes a boron nitride semiconductor 10 and an electrode 20, referring to fig. 1, the boron nitride semiconductor 10 has a first surface (not shown) and a second surface 10a that are disposed opposite to each other, where one electrode 20 is in contact with the first surface, and the other electrode 20 is in contact with the second surface 10a, because the boron nitride semiconductor 10 is sensitive to neutrons, the electrode 20 is configured to obtain an electrical signal generated when the boron nitride semiconductor 10 captures neutrons, thereby a function of detecting neutrons can be achieved, and the detection efficiency of the neutron detector 100 is high.
The boron nitride semiconductor 10 has a larger forbidden band width, and the boron nitride semiconductor 10 is sensitive to neutrons, so that an additional neutron sensitive conversion layer is not needed like other semiconductor neutron detectors 100, the detection efficiency is high, the neutron counting and neutron energy spectrum can be directly measured, the neutron dose change can be quickly and accurately reflected, and the application prospect in the aspect of personal and environmental neutron dose monitoring is good.
In addition, the boron nitride semiconductor 10 has high thermal conductivity and a larger forbidden band width, and the boron nitride semiconductor 10 has high temperature resistance, so the neutron detector 100 based on the boron nitride semiconductor 10 can be used in a high-temperature and high-radiation environment, compared with a He-3 gas detector, the neutron detector 100 provided by the embodiment of the present application has better durability, much lower required voltage and power consumption, and no need of increasing atmospheric pressure, thereby reducing the size and weight of the neutron detector 100, enabling the structure of the neutron detector 100 to be more compact, further enabling the overall size of the neutron detector 100 to be more diversified, and having a faster response speed, improving the reliability of the neutron detector 100 and reducing the cost of the neutron detector 100.
In one embodiment, the boron nitride semiconductor 10 is formed by Low Pressure Chemical Vapor Deposition (LPCVD), and the boron nitride crystal is grown by a low pressure chemical vapor deposition process, which has a fast growth speed and a large and uniform product thickness, so that the neutron detector 100 manufactured by growing the boron nitride crystal by the low pressure chemical vapor deposition process has the advantages of high sensitivity and high detection efficiency.
In an embodiment, the first surface and the second surface 10a are arranged in parallel, so that the electric field lines inside the neutron detector are relatively regular, and the detection effect of the neutron detector is further improved.
In some embodiments, the first and second surfaces 10a may also be non-parallel.
It is understood that the electrodes 20 are disposed on any first surface and second surface 10a of the boron nitride semiconductor 10, which are oppositely disposed, so as to detect neutrons, and preferably, the first surface and the second surface 10a are two surfaces of the boron nitride semiconductor 10 with the smallest relative distance therebetween, that is, the electrodes 20 are disposed on two surfaces of the boron nitride semiconductor 10 with the smallest relative distance therebetween, in this case, the distance from the electrodes 20 to which the electrical signals generated when the boron nitride semiconductor 10 captures neutrons is transmitted is shortest, so that the sensitivity and the detection efficiency of the neutron detector 100 are further improved.
Taking the boron nitride semiconductor 10 as an example of a cuboid, the cuboid has a certain length, width and thickness, the neutron detector 100 formed by the boron nitride semiconductor 10 with the thickness of 1mm can achieve about 50% of thermal neutron detection efficiency under the existing conditions, and the neutron detector 100 formed by the boron nitride semiconductor 10 with the thickness of 3mm can achieve about 100% of thermal neutron detection efficiency under the existing conditions, so it can be known that the thickness of the boron nitride semiconductor 10 is generally smaller to meet the use requirement, the thickness of the boron nitride semiconductor 10 is smaller relative to the length and the width, therefore, the first surface and the second surface 10a are generally two surfaces in the thickness direction of the boron nitride semiconductor 10, and meanwhile, the boron nitride semiconductor 10 is flatly placed on the carrier along the direction with a smaller relative distance to increase the contact area with the carrier, and thus being more stable, that is, it is more stable to place one side of the first or second surface 10a on the carrier. Due to the advantages of high sensitivity and high detection efficiency of the boron nitride semiconductor 10, the neutron detector 100 has a compact structure and a small volume, and compared with the conventional He-3 proportional counter tube neutron detector 100, the size of the neutron detector 100 with the same detection efficiency is reduced from dozens of centimeters to about two centimeters.
In one embodiment, referring to fig. 1, the electrodes 20 are metal films, and the metal films are respectively formed on the first surface and the second surface 10a, and are connected to the metal films through wires 50 to respectively form signal terminals, wherein the wires 50 are metal leads.
Further, the metal film is formed on the first surface and the second surface 10a through evaporation, and the metal is evaporated on the first surface and the second surface 10a to form the metal film.
It is understood that the material of the metal film is not limited herein, and may be, for example, gold, nickel, or aluminum, and the material of the metal film in the embodiment of the present application is gold, which has sufficient stability and conductivity.
In some embodiments, the electrode 20 may also be a graphite film formed of graphite sprayed on the surface of the boron nitride semiconductor 10.
In one embodiment, referring to fig. 1, the neutron detector 100 includes an electrically insulating base 30, and the boron nitride semiconductor 10 is fixed on the electrically insulating base 30 to facilitate the movement and fixing of the neutron detector 100.
In one embodiment, the electrically insulating baseThe resistance range of the socket 30 is 1012Ω-1014Ω, which can effectively reduce the interference of leakage current to the measurement process, and further improve the detection efficiency and accuracy of the neutron detector 100, and the electrical insulation base 30 has a resistance of 1013Ω。
Further, the electrically insulating base 30 is made of aluminum nitride, for example, a ceramic plate made of aluminum nitride (AlN160) which is a novel ultra-high resistivity ceramic material, such that the resistance of the ceramic plate is in the range of 1012Ω-1014Omega, the interference of leakage current to the measurement process can be effectively reduced.
In an embodiment, referring to fig. 1, the ceramic plate is provided with a mounting hole 30a, and the ceramic plate is mounted at a required position through the mounting hole 30a, so that compared with a fixing mode of wire bonding, vibration of the neutron detector 100 can be effectively reduced, interference of vibration of the neutron detector 100 to signals in a measurement process can be prevented, and detection efficiency and accuracy of the neutron detector 100 are improved.
Specifically, two mounting holes 30a are provided on the same side of the ceramic plate, and can be fixed or hung to a desired position through the two mounting holes 30 a.
Further, the mounting hole 30a is disposed on the opposite side of the ceramic board from the wiring portion of the wire 50, so that the wire 50 can be conveniently routed, and the assembly of the ceramic board is prevented from being interfered by the routing of the wire 50.
In one embodiment, referring to fig. 1, the neutron detector 100 includes a conductive metal layer 40, and the conductive metal layer 40 is located between the first surface and the electrically insulating base 30, so that the conductive metal layer 40 can be connected through the conducting wire 50 to form a signal outlet of the electrode 20 on the first surface, and it can be understood that the first surface of the boron nitride semiconductor 10 is fixed on the electrically insulating base 30 through the conductive metal layer 40.
It can be understood that, referring to fig. 1, the physical dimension of the conductive metal layer 40 is larger than the physical dimension of the boron nitride semiconductor 10, and at this time, the conductive metal layer 40 is at least partially exposed out of the boron nitride semiconductor 10, that is, the boron nitride semiconductor 10 does not completely cover the conductive metal layer 40, and the conductive metal layer 40 exposed out of the boron nitride semiconductor 10 is conveniently connected to the conductive wire 50, thereby forming a signal terminal.
In one embodiment, the conductive metal layer 40 is formed on the electrically insulating base 30 by chemical deposition, and compared with a common plating layer, the conductive metal layer 40 formed on the electrically insulating base 30 by chemical deposition has a more firm structure, a brighter color, an easily-welded surface, and a better electrical contact effect.
Specifically, after the conductive metal layer 40 is formed on the electrically insulating base 30 by chemical deposition, the first surface is fixedly connected to the conductive metal layer 40, the connection manner of the first surface and the conductive metal layer 40 is not limited herein, and for example, the first surface and the conductive metal layer 40 are bonded together by conductive glue, so that the conductive metal layer has a certain conductivity while having sufficient connection strength.
It is understood that the material of the conductive metal layer 40 is not limited herein, and may be, for example, gold, nickel, or aluminum, and the material of the conductive metal layer 40 in the embodiment of the present application is gold, which has sufficient stability and conductivity.
The various embodiments/implementations provided herein may be combined with each other without contradiction.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application are included in the protection scope of the present application.
Claims (12)
1. A neutron detector, comprising:
a boron nitride semiconductor (10), the boron nitride semiconductor (10) having oppositely disposed first and second surfaces (10 a);
two electrodes (20), wherein one of the electrodes (20) is in contact with the first surface and the other electrode (20) is in contact with the second surface (10 a).
2. The neutron detector of claim 1, wherein the boron nitride semiconductor (10) is formed by low pressure chemical vapor deposition.
3. The neutron detector of claim 1, wherein the first surface and the second surface (10a) are disposed in parallel, and the first surface and the second surface (10a) are the two surfaces of the boron nitride semiconductor (10) that are the smallest in relative distance, respectively.
4. The neutron detector of claim 1, wherein the electrode (20) is a metal film formed on the first and second surfaces (10a) by evaporation.
5. The neutron detector of claim 4, wherein the metal film is made of gold, nickel, or aluminum.
6. The neutron detector of any of claims 1-5, wherein the neutron detector (100) comprises an electrically insulating base (30), the boron nitride semiconductor (10) being secured to the electrically insulating base (30).
7. The neutron detector of claim 6, wherein the electrically insulating base (30) has a resistance in the range of 1012Ω-1014Ω。
8. The neutron detector of claim 6, wherein the electrically insulating base (30) is aluminum nitride.
9. The neutron detector of claim 6, wherein the neutron detector (100) comprises a conductive metal layer (40), the conductive metal layer (40) being located between the first surface and the electrically insulating base (30), the conductive metal layer (40) having a larger outer dimension than the boron nitride semiconductor (10).
10. The neutron detector of claim 9, wherein the electrically conductive metal layer (40) is formed on the electrically insulating base (30) by chemical deposition.
11. The neutron detector of claim 9, wherein the conductive metal layer (40) is gold, nickel, or aluminum.
12. A detection system, characterized by comprising a neutron detector (100) according to any of claims 1 to 11.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111312203.0A CN114019561A (en) | 2021-11-08 | 2021-11-08 | Neutron detector and detection system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111312203.0A CN114019561A (en) | 2021-11-08 | 2021-11-08 | Neutron detector and detection system |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1238560A (en) * | 1998-06-05 | 1999-12-15 | 三菱电机株式会社 | Semiconductor device |
| CN102695969A (en) * | 2009-10-26 | 2012-09-26 | 芬菲斯公司 | Detector, method for manufacturing a detector and imaging apparatus |
| CN106461800A (en) * | 2014-06-23 | 2017-02-22 | 伦斯勒理工学院 | Radiation-detecting structures and fabrication methods thereof |
| CN106662662A (en) * | 2014-06-23 | 2017-05-10 | 伦斯勒理工学院 | Fabricating radiation-detecting structures |
| CN107234794A (en) * | 2017-06-02 | 2017-10-10 | 四川大学 | A kind of preparation method of multi-functional neutron current shielding composite |
| CN110168408A (en) * | 2016-10-27 | 2019-08-23 | 西尔弗雷有限公司 | Direct converted radiation detector |
| CN210015862U (en) * | 2019-05-31 | 2020-02-04 | 无锡华普微电子有限公司 | Semiconductor neutron detector for nuclear radiation detection |
| CN110808296A (en) * | 2019-10-22 | 2020-02-18 | 浙江大学 | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure |
| CN111479377A (en) * | 2020-04-22 | 2020-07-31 | 吉林大学 | D-D neutron tube target film protective layer |
| CN113089091A (en) * | 2021-04-01 | 2021-07-09 | 北京化工大学 | Boron nitride template and preparation method thereof |
-
2021
- 2021-11-08 CN CN202111312203.0A patent/CN114019561A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1238560A (en) * | 1998-06-05 | 1999-12-15 | 三菱电机株式会社 | Semiconductor device |
| CN102695969A (en) * | 2009-10-26 | 2012-09-26 | 芬菲斯公司 | Detector, method for manufacturing a detector and imaging apparatus |
| CN106461800A (en) * | 2014-06-23 | 2017-02-22 | 伦斯勒理工学院 | Radiation-detecting structures and fabrication methods thereof |
| CN106662662A (en) * | 2014-06-23 | 2017-05-10 | 伦斯勒理工学院 | Fabricating radiation-detecting structures |
| CN110168408A (en) * | 2016-10-27 | 2019-08-23 | 西尔弗雷有限公司 | Direct converted radiation detector |
| CN107234794A (en) * | 2017-06-02 | 2017-10-10 | 四川大学 | A kind of preparation method of multi-functional neutron current shielding composite |
| CN210015862U (en) * | 2019-05-31 | 2020-02-04 | 无锡华普微电子有限公司 | Semiconductor neutron detector for nuclear radiation detection |
| CN110808296A (en) * | 2019-10-22 | 2020-02-18 | 浙江大学 | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure |
| CN111479377A (en) * | 2020-04-22 | 2020-07-31 | 吉林大学 | D-D neutron tube target film protective layer |
| CN113089091A (en) * | 2021-04-01 | 2021-07-09 | 北京化工大学 | Boron nitride template and preparation method thereof |
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