CN110743893A - Method for recovering crystalline silicon photovoltaic material - Google Patents
Method for recovering crystalline silicon photovoltaic material Download PDFInfo
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- CN110743893A CN110743893A CN201810813782.9A CN201810813782A CN110743893A CN 110743893 A CN110743893 A CN 110743893A CN 201810813782 A CN201810813782 A CN 201810813782A CN 110743893 A CN110743893 A CN 110743893A
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- Prior art keywords
- photovoltaic cell
- photovoltaic
- crushing
- crystalline silicon
- aluminum
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000012216 screening Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 239000002313 adhesive film Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 20
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims 1
- 238000007873 sieving Methods 0.000 claims 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 abstract description 15
- 239000005038 ethylene vinyl acetate Substances 0.000 abstract description 15
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 abstract description 15
- 229920006342 thermoplastic vulcanizate Polymers 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 6
- 238000011084 recovery Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silver-aluminum Chemical compound 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE
- B09B3/00—Destroying solid waste or transforming solid waste into something useful or harmless
- B09B3/40—Destroying solid waste or transforming solid waste into something useful or harmless involving thermal treatment, e.g. evaporation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE
- B09B5/00—Operations not covered by a single other subclass or by a single other group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B11/00—Obtaining noble metals
- C22B11/04—Obtaining noble metals by wet processes
- C22B11/042—Recovery of noble metals from waste materials
- C22B11/046—Recovery of noble metals from waste materials from manufactured products, e.g. from printed circuit boards, from photographic films, paper or baths
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B21/00—Obtaining aluminium
- C22B21/0015—Obtaining aluminium by wet processes
- C22B21/0023—Obtaining aluminium by wet processes from waste materials
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/006—Wet processes
- C22B7/007—Wet processes by acid leaching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/20—Waste processing or separation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/60—Glass recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Abstract
The invention discloses a method for recovering crystalline silicon photovoltaic material, which comprises the following steps: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660-1000 ℃ to separate aluminum, and then continuously heating to 961.78-1000 ℃ to separate silver and polysilicon; wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the crushing and screening adopt a screen with 180 meshes and 220 meshes; according to the invention, the photovoltaic cell is recycled according to different melting points of aluminum, silver and polycrystalline silicon in the photovoltaic cell.
Description
Technical Field
The invention belongs to the technical field of waste photovoltaic battery pack recovery, and particularly relates to a method for recovering crystalline silicon photovoltaic materials.
Background
As a new clean energy, the solar photovoltaic industry develops rapidly in recent years, and the recovery and treatment of waste photovoltaic modules become an inevitable problem while solar photovoltaic power generation brings clean energy to human beings.
Solar cells produced in commercial scale at present are mainly monocrystalline silicon and polycrystalline silicon series, the monocrystalline silicon and the polycrystalline silicon are used as base materials, silver paste, silver-aluminum paste and aluminum paste are used as conductive materials, light energy and heat energy are converted into electric energy, certain leftover waste and unqualified products exist in the manufacturing and mounting processes of solar photovoltaic cells, the solar photovoltaic cells need to be scrapped after the solar photovoltaic cells reach the service life, and the cells contain a large amount of valuable elements such as silicon, silver, aluminum and the like, so that how to recycle the cells efficiently can reduce environmental pollution, change waste into valuable and save resources.
Disclosure of Invention
The invention aims to provide a method for recovering crystalline silicon photovoltaic materials, which realizes the recovery of photovoltaic cells through the difference of melting points of aluminum, silver and polycrystalline silicon in the photovoltaic cells.
The technical scheme adopted by the invention is that a method for recovering crystalline silicon photovoltaic material comprises the following specific implementation methods: and crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660-1000 ℃ to separate aluminum, and then continuously heating to 961.78-1000 ℃ to separate silver and polysilicon.
The present invention is also characterized in that,
the pretreatment comprises the following steps: and disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove the EVA adhesive film, and then removing the upper glass plate and the bottom TPT back plate to obtain the photovoltaic cell.
Before crushing and screening the photovoltaic cell, corroding the surface of the pretreated photovoltaic cell by using mixed acid of hydrochloric acid and perchloric acid, and then washing the surface of the photovoltaic cell.
The concentration of the hydrochloric acid is 0.5-3mol/l, and the concentration of the perchloric acid is 0.1-1 mol/l.
The corrosion time is 1-60 min.
The crushing and screening adopts a screen with 180 meshes and 220 meshes.
The photovoltaic cell piece recovery method has the beneficial effects that the photovoltaic cell piece is recovered according to different melting points of aluminum, silver and polycrystalline silicon in the photovoltaic cell piece.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a method for recovering a crystalline silicon photovoltaic material, which comprises the following specific implementation methods: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660-1000 ℃ to separate aluminum, and then continuously heating to 961.78-1000 ℃ to separate silver and polysilicon;
before crushing and screening the photovoltaic cell, corroding the surface of the pretreated photovoltaic cell for 1-60min by using mixed acid of hydrochloric acid with the concentration of 0.5-3mol/l and perchloric acid with the concentration of 0.1-1mol/l, and then washing the surface of the photovoltaic cell;
the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell;
the crushing and screening adopts a screen with 180 meshes and 220 meshes.
Compared with the existing preparation method, the invention mainly has the following technical advantages: according to the invention, the photovoltaic cell is recycled according to different melting points of aluminum, silver and polycrystalline silicon in the photovoltaic cell.
Example 1
The embodiment 1 of the invention provides a method for recovering a crystalline silicon photovoltaic material, which comprises the following specific implementation methods: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660 ℃ to separate aluminum, and then continuously heating to 961.78 ℃ to separate silver and polycrystalline silicon;
wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; and the crushing and screening adopts a screen of 180 meshes, before the crushing and screening are carried out on the photovoltaic cell, the surface of the photovoltaic cell after pretreatment is corroded for 1min by using a mixed acid of hydrochloric acid with the concentration of 0.5mol/l and perchloric acid with the concentration of 0.1mol/l, and then the surface of the photovoltaic cell is washed.
Example 2
The embodiment 2 of the invention provides a method for recovering a crystalline silicon photovoltaic material, which comprises the following specific implementation methods: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 700 ℃ to separate aluminum, and then continuously heating to 1000 ℃ to separate silver and polycrystalline silicon;
wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the method comprises the steps of adopting a screen with 220 meshes for crushing and screening, corroding the surface of the photovoltaic cell slice after pretreatment for 60min by using a mixed acid of hydrochloric acid with the concentration of 3mol/l and perchloric acid with the concentration of 1mol/l before crushing and screening the photovoltaic cell slice, and then washing the surface of the photovoltaic cell slice.
Example 3
The embodiment 3 of the invention provides a method for recovering a crystalline silicon photovoltaic material, which comprises the following specific implementation methods: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 680 ℃ to separate aluminum, and then continuously heating to 980 ℃ to separate silver and polycrystalline silicon;
wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; and the crushing and screening adopts a 200-mesh screen, before the crushing and screening are carried out on the photovoltaic cell, the surface of the photovoltaic cell after pretreatment is corroded for 20min by using a mixed acid of hydrochloric acid with the concentration of 1mol/l and perchloric acid with the concentration of 0.9mol/l, and then the surface of the photovoltaic cell is washed.
Example 4
Embodiment 4 of the present invention provides a method for recovering a crystalline silicon photovoltaic material, which is specifically implemented by: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660 ℃ to separate aluminum, and then continuously heating to 1000 ℃ to separate silver and polycrystalline silicon;
wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the crushing and screening adopts a 190-mesh screen, before the crushing and screening of the photovoltaic cell, the surface of the photovoltaic cell after pretreatment is corroded for 30min by using a mixed acid of hydrochloric acid with the concentration of 2mol/l and perchloric acid with the concentration of 0.5mol/l, and then the surface of the photovoltaic cell is washed.
Example 5
Embodiment 5 of the present invention provides a method for recovering a crystalline silicon photovoltaic material, which is specifically implemented by: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 695 ℃ to separate aluminum, and then continuously heating to 969 ℃ to separate silver and polycrystalline silicon;
wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the crushing and screening adopts a 190-mesh screen, before the crushing and screening of the photovoltaic cell, the surface of the photovoltaic cell after pretreatment is corroded for 1min by using a mixed acid of hydrochloric acid with the concentration of 0.5mol/l and perchloric acid with the concentration of 0.1mol/l, and then the surface of the photovoltaic cell is washed.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (6)
1. A method for recovering crystalline silicon photovoltaic material is characterized by comprising the following specific implementation methods: and crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660-1000 ℃ to separate aluminum, and then continuously heating to 961.78-1000 ℃ to separate silver and polysilicon.
2. The method for recovering crystalline silicon photovoltaic material according to claim 1, wherein the pretreatment is: and disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove the EVA adhesive film, and then removing the upper glass plate and the bottom TPT back plate to obtain the photovoltaic cell.
3. The method for recovering crystalline silicon photovoltaic material as claimed in claim 2, wherein the surface of the photovoltaic cell is washed after the surface of the photovoltaic cell is etched with a mixed acid of hydrochloric acid and perchloric acid before the photovoltaic cell is crushed and sieved.
4. The method according to claim 3, wherein the hydrochloric acid concentration is 0.5 to 3mol/l, and the perchloric acid concentration is 0.1 to 1 mol/l.
5. The method for recovering crystalline silicon photovoltaic material according to claim 4, wherein the etching time is 1-60 min.
6. The method as claimed in claim 5, wherein the crushing and sieving is performed with a 220 mesh sieve of 180 meshes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810813782.9A CN110743893A (en) | 2018-07-23 | 2018-07-23 | Method for recovering crystalline silicon photovoltaic material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810813782.9A CN110743893A (en) | 2018-07-23 | 2018-07-23 | Method for recovering crystalline silicon photovoltaic material |
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| CN110743893A true CN110743893A (en) | 2020-02-04 |
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| CN201810813782.9A Pending CN110743893A (en) | 2018-07-23 | 2018-07-23 | Method for recovering crystalline silicon photovoltaic material |
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